CN106526445A - Method for fast measuring thermal steady-state characteristic of GaN HEMT - Google Patents
Method for fast measuring thermal steady-state characteristic of GaN HEMT Download PDFInfo
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- CN106526445A CN106526445A CN201611062801.6A CN201611062801A CN106526445A CN 106526445 A CN106526445 A CN 106526445A CN 201611062801 A CN201611062801 A CN 201611062801A CN 106526445 A CN106526445 A CN 106526445A
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- gan hemt
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Abstract
The invention relates to the field of semiconductor device manufacturing and more particularly to a method for fast measuring the thermal steady-state characteristic of a GaN HEMT. The method comprises the steps of: selecting a plurality of bias voltage values of a GaN HEMT device, measuring an initial DC I-V characteristic of the GaN HEMT device; based on the initial DC I-V characteristic of the GaN HEMT device, calculating the static power consumption corresponding to a plurality of bias voltages; arranging the static power consumption in an ascending order and arranging the corresponding bias voltage values in an ascending order according to the static power consumption, applying voltage to the GaN HEMT device to re-measure the thermal steady-state characteristic of the GaN HEMT device, thereby improving the measurement efficiency.
Description
Technical field
A kind of the present invention relates to field of manufacturing semiconductor devices, more particularly to the quick measurement of the hot steady-state characteristics of GaN HEMT
Method.
Background technology
GaN HEMTs (HEMT) have very high two-dimensional electron gas (2-DEG) concentration, high saturation electricity
The advantages of sub- migration velocity and high power density so that GaN HEMT devices microwave power application have GaAs devices without
The advantage of method analogy.But there is very high power density, about the 5～10 of GaAs devices times just because of GaN HEMT so that
The self-heating effect which is caused due to power dissipation in the course of the work is fairly obvious, therefore, in GaN HEMT device test processs
In, it is necessary to consider the impact of self-heating effect.
In GaN HEMT devices characteristic evaluation and modeling process, direct current (DC) voltage x current (I- of measurement device is needed
V) and small signal S-parameters characteristic, typically using Semiconductor Parameter Analyzer (such as Keysight B1500 series and Keithley
4200 is serial) as the voltage/current source table of measured device.In GaN HEMT tests, will often find that what DC I-V were measured
During current value ratio measurement S parameter, current value under identical voltage bias condition is bigger than normal, the reason for cause this phenomenon be due to,
When S parameter is tested, device is long relative to the testing time of DC I-V in the testing time of each bias point, and it is flat that device more they tends to heat
The steady statue of weighing apparatus, the junction temperature of device are higher, and corresponding electric current is lower.Therefore, if in GaN HEMT device test processs,
If device is not up to hot stable state, the result for measuring only is an intermediateness, is not the final result that we want.In order to survey
The hot steady-state characteristic of amount GaN HEMT devices, needs to set a time delay before every measurement, waits device to reach heat
After stable state, feature measurement can be just carried out.But the time that GaN HEMT devices are reached needed for hot stable state is longer, several seconds are generally required
The poor Δ T of device junction using warming therapy before and after even tens seconds, with device state changejCorrelation, Δ TjIt is bigger, the heat-stable time of needs
It is longer.When the DC I-V curves for carrying out GaN HEMT devices test the S parameter test with many bias points, the bias point of test can
To reach tens to hundreds of, if with traditional method of testing, the scanning device grid of order and drain bias voltage, needed
The considerably long test waiting time is expended, the hot steady-state characteristic of ability measurement device.
The content of the invention
The embodiment of the present invention solves existing skill by providing a kind of GaN HEMT method for fast measuring of hot steady-state characteristic
Need to spend the waiting time in the hot steady-state characteristics of measurement GaN HEMT in art, there is the low technical problem of measurement efficiency.
In order to solve above-mentioned technical problem, a kind of quick survey of the hot steady-state characteristics of GaN HEMT is embodiments provided
Amount method, comprises the steps：
Multiple bias voltage values of GaN HEMT devices are chosen, the initial DC I-V that measurement obtains GaN HEMT devices is special
Property；
According to the initial DC I-V characteristic of GaN HEMT devices, the static work(obtained under the multiple bias voltages of correspondence is calculated
Consumption；
The quiescent dissipation is arranged according to ascending order, and corresponding bias voltage value is arranged according to the quiescent dissipation ascending order
Sequentially, the GaN HEMT devices are pressed, remeasures the hot steady-state characteristic of GaN HEMT devices.
Further, direct current when the hot steady-state characteristic of the GaN HEMT devices is specially GaN HEMT devices hot stable state
I-V characteristic and S parameter characteristic.
Further, the plurality of bias voltage value is specially any number of in the range of GaN HEMT device working bias voltages
The combination of grid voltage and corresponding drain voltage, wherein grid voltage excursion are complete to raceway groove from raceway groove pinch-off voltage
The change of the voltage of opening, leakage pressure excursion are the change from 0V to device bias voltage.Further, the selection GaN
Multiple bias voltage values of HEMT device, measurement obtain the initial DC I-V characteristic of GaN HEMT devices, specially：
Multiple bias voltage values of GaN HEMT devices are chosen, measurement obtains the drain current of GaN HEMT devices with grid
The variation characteristic of voltage and drain voltage.
Using one or more technical scheme in the present invention, have the advantages that：
Apply bias voltage according to the order that device quiescent dissipation is incremented by device due to adopting, reduce device working condition
Change causes the power consumption and difference variation scope of device, so as to shorten hot steady-state waiting time, it is to avoid conventional test methodologies
Middle device repeatedly extra time wasted by heating and cooling, improve testing efficiency.
Description of the drawings
The step of Fig. 1 is the method for fast measuring of the hot steady-state characteristics of GaN HEMT in embodiment of the present invention schematic flow sheet；
Fig. 2 be the embodiment of the present invention under multiple bias points the static power of device list schematic diagram；
Fig. 3 is the list schematic diagram after in the embodiment of the present invention arrange static power according to ascending order.
Specific embodiment
The embodiment of the present invention solves existing skill by providing a kind of GaN HEMT method for fast measuring of hot steady-state characteristic
Need to spend the waiting time in the hot steady-state characteristics of measurement GaN HEMT in art, there is the low technical problem of measurement efficiency.
In order to solve above-mentioned technical problem, below in conjunction with Figure of description and specific embodiment to the present invention's
Technical scheme is described in detail.
A kind of method for fast measuring of the hot steady-state characteristic of GaN HEMT provided in an embodiment of the present invention, as shown in figure 1, bag
Include：S101, chooses multiple bias voltage values of GaN HEMT devices, and the initial DC I-V that measurement obtains GaN HEMT devices is special
Property；S102, according to the initial DC I-V characteristic of GaN HEMT devices, calculates the static work(obtained under the multiple bias voltages of correspondence
Consumption；S103, quiescent dissipation is arranged according to ascending order, and arranges corresponding bias voltage value order according to quiescent dissipation ascending order, right
GaN HEMT devices press, and remeasure the hot steady-state characteristic of GaN HEMT devices.
In a particular embodiment, the method for testing that the present invention is provided is applied to large quantities of measurements of similar transistor npn npn
Examination.First, in order to obtain quiescent dissipation of the GaN HEMT devices in each bias point, need the direct current I- to GaN HEMT devices
V curves do test in advance, and the measurement result in the S101 only plays the assessment effect of an initial value, therefore, the measurement result
Need not be exactly accurate, it is not required that device reaches thermal steady state.Specifically, in S101 choose GaN HEMT devices it is many
The combination of any number of grid voltages and corresponding drain voltage in the range of individual bias voltage value, i.e. device working bias voltage, its
Middle grid voltage excursion is the change of the voltage opened from raceway groove pinch-off voltage value raceway groove, and the excursion of drain voltage is
From 0V to the change of device bias voltage, particularly as being first to fix grid voltage, then drain voltage is scanned, then, retightened
Grid voltage, then drain voltage is scanned, so get successively., thus measure the drain current for obtaining GaN HEMT devices
With grid voltage and the variation characteristic of drain voltage.Due to not needing device to reach thermal steady state in this step, in order to add
Test time delay (delay time) of Semiconductor Parameter Analyzer (by taking B1505 as an example) can be set to 0 by fast test speed
Second, time of measuring (measure time) is set to Medium (M).
The grid voltage excursion is the change from raceway groove pinch-off voltage to the full opening of voltage of raceway groove.Such as, it is right
0.25 μm of GaN HEMT device, grid voltage can take any number of magnitudes of voltage in -3.5V～0V, or to 0.25 μm
GaAs pHEMT devices, grid voltage can take any number of magnitudes of voltage in -1.5V～0V.The excursion of drain voltage is
From 0V to the change of device bias voltage.
Then, S102 is performed, according to the initial DC I-V characteristic of GaN HEMT devices, calculates and obtain the multiple biasings of correspondence
Quiescent dissipation under voltage, quiescent dissipation now is exactly that drain current is taken advantage of with drain voltage according under multiple bias voltage values
The quiescent dissipation that product is obtained.As shown in Fig. 2 being the quiescent dissipation list of acquisition under 15 bias voltage values.
Finally, S103 is performed, quiescent dissipation is arranged according to ascending order, and corresponding biasing is arranged according to quiescent dissipation ascending order
Magnitude of voltage order, presses to GaN HEMT devices, remeasures the hot steady-state characteristic of GaN HEMT devices.
Specifically, the order being incremented by according to GaN HEMT devices quiescent dissipation, correspondence rearrange the order of bias voltage,
As shown in figure 3, so as to avoid device heating and cooling repeatedly, and the subtractive that each device state changes the quiescent dissipation for causing is little
(i.e. Δ TjReduce), such that it is able to shorten the waiting time of hot stable state.For example, after according to the arrangement of quiescent dissipation ascending order, press
Corresponding bias voltage value order is arranged according to quiescent dissipation ascending order, GaN HEMT devices are pressed, GaN HEMT devices are remeasured
DC I-V characteristics during the hot steady-state characteristic of part, specifically stable state hot to GaN HEMT devices using Semiconductor Parameter Analyzer
Measure with S parameter characteristics.1 second is set to using B1500 series of tests time delay (delay time), time of measuring
(measure time) is set to short (S), so, compared with traditional measurement method, when substantially reducing overall measurement
Between, and, the measuring process of the present invention, it is possible to increase testing efficiency is particularly well-suited to the high-volume test of similar transistor npn npn,
Because when similar transistor npn npn is measured, S101 and S102 needs to perform once, and the transistor static power consumption of other sizes can be led to
The principle for crossing equal proportion extension is estimated.
By using above-mentioned measuring method, can the effectively save time, improve measurement efficiency.
, but those skilled in the art once know basic creation although preferred embodiments of the present invention have been described
Property concept, then can make other change and modification to these embodiments.So, claims are intended to be construed to include excellent
Select embodiment and fall into the had altered of the scope of the invention and change.
Obviously, those skilled in the art can carry out the essence of various changes and modification without deviating from the present invention to the present invention
God and scope.So, if these modifications of the present invention and modification belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising these changes and modification.
Claims (4)
1. the method for fast measuring of the hot steady-state characteristics of a kind of GaN HEMT, it is characterised in that comprise the steps：
Multiple bias voltage values of GaN HEMT devices are chosen, measurement obtains the initial DC I-V characteristic of GaN HEMT devices；
According to the initial DC I-V characteristic of GaN HEMT devices, the quiescent dissipation obtained under the multiple bias voltages of correspondence is calculated；
The quiescent dissipation is arranged according to ascending order, and it is suitable corresponding bias voltage value to be arranged according to the quiescent dissipation ascending order
Sequence, presses to the GaN HEMT devices, remeasures the hot steady-state characteristic of GaN HEMT devices.
2. the method for fast measuring of the hot steady-state characteristics of GaN HEMT according to claim 1, it is characterised in that the GaN
DC I-V characteristics and S parameter characteristic when the hot steady-state characteristic of HEMT device is specially GaN HEMT devices hot stable state.
3. the method for fast measuring of the hot steady-state characteristics of GaN HEMT according to claim 1, it is characterised in that the plurality of
Bias voltage value is specially any number of grid voltages in the range of GaN HEMT device working bias voltages and corresponding drain voltage
Combination, wherein, grid voltage excursion is the change from raceway groove pinch-off voltage to the full opening of voltage of raceway groove, drain electrode electricity
The excursion of pressure is the change from 0V to device bias voltage.
4. the method for fast measuring of the hot steady-state characteristics of GaN HEMT according to claim 1, it is characterised in that the selection
Multiple bias voltage values of GaN HEMT devices, measurement obtain the initial DC I-V characteristic of GaN HEMT devices, specially：
Multiple bias voltage values of GaN HEMT devices are chosen, measurement obtains the drain current of GaN HEMT devices with grid voltage
With the variation characteristic of drain voltage.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107192935A (en) * | 2017-07-07 | 2017-09-22 | 成都海威华芯科技有限公司 | A kind of measuring method of GaN HEMT devices thermal resistance and thermal capacitance |
| CN107422243A (en) * | 2017-08-28 | 2017-12-01 | 中国电子产品可靠性与环境试验研究所 | Gallium nitride HEMT device junction temperature test device, test board, test system and its method |
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| JPS62144339A (en) * | 1985-12-19 | 1987-06-27 | Matsushita Electronics Corp | Inspection method of semiconductor device |
| CN101246136A (en) * | 2008-03-21 | 2008-08-20 | 东南大学 | Electric test method for thermal expansion coefficient of surface finished polysilicon thin film |
| CN102207534A (en) * | 2011-03-18 | 2011-10-05 | 华南师范大学 | Method and device for measuring thermal resistance of light emitting diode (LED) by pn junction |
| CN102955113A (en) * | 2011-08-17 | 2013-03-06 | 中国科学院微电子研究所 | Method for measuring thermal reliability of GaN-based devices |
| CN105070701A (en) * | 2015-08-23 | 2015-11-18 | 华南理工大学 | GaN-based inverted HEMT device structure and manufacturing method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS62144339A (en) * | 1985-12-19 | 1987-06-27 | Matsushita Electronics Corp | Inspection method of semiconductor device |
| CN101246136A (en) * | 2008-03-21 | 2008-08-20 | 东南大学 | Electric test method for thermal expansion coefficient of surface finished polysilicon thin film |
| CN102207534A (en) * | 2011-03-18 | 2011-10-05 | 华南师范大学 | Method and device for measuring thermal resistance of light emitting diode (LED) by pn junction |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107192935A (en) * | 2017-07-07 | 2017-09-22 | 成都海威华芯科技有限公司 | A kind of measuring method of GaN HEMT devices thermal resistance and thermal capacitance |
| CN107192935B (en) * | 2017-07-07 | 2019-12-13 | 成都海威华芯科技有限公司 | Method for measuring thermal resistance and thermal capacity of GaN HEMT device |
| CN107422243A (en) * | 2017-08-28 | 2017-12-01 | 中国电子产品可靠性与环境试验研究所 | Gallium nitride HEMT device junction temperature test device, test board, test system and its method |
| CN107422243B (en) * | 2017-08-28 | 2020-09-29 | 中国电子产品可靠性与环境试验研究所 | Junction temperature testing device, testing board, testing system and method for gallium nitride HEMT device |
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