CN106517077A - Infrared detector and manufacturing method thereof - Google Patents
Infrared detector and manufacturing method thereof Download PDFInfo
- Publication number
- CN106517077A CN106517077A CN201610971868.5A CN201610971868A CN106517077A CN 106517077 A CN106517077 A CN 106517077A CN 201610971868 A CN201610971868 A CN 201610971868A CN 106517077 A CN106517077 A CN 106517077A
- Authority
- CN
- China
- Prior art keywords
- layer
- infrared
- substrate
- silicon
- graphical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000010521 absorption reaction Methods 0.000 claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 230000000694 effects Effects 0.000 claims abstract description 16
- 230000000737 periodic effect Effects 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 238000002161 passivation Methods 0.000 claims description 25
- 238000009826 distribution Methods 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 8
- 239000000725 suspension Substances 0.000 abstract 1
- 230000009102 absorption Effects 0.000 description 28
- 238000002835 absorbance Methods 0.000 description 18
- 238000002360 preparation method Methods 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000003331 infrared imaging Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- AHWYHTJMGYCPBU-UHFFFAOYSA-N [Ge].[Si]=O Chemical compound [Ge].[Si]=O AHWYHTJMGYCPBU-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012237 artificial material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- -1 germanium silica Compound Chemical class 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000005945 translocation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Abstract
The invention discloses an infrared detector and a manufacturing method thereof, wherein the infrared detector comprises a substrate, a reflection part, a micro-bridge and a graphical film; the reflection part is arranged on the substrate; the micro-bridge is arranged on the substrate in a suspension manner; a cavity formed by the substrate and the micro-bridge in an encircling manner forms an optical resonant cavity; the micro-bridge is provided with a thermo-sensitive layer; the graphical film is arranged on the thermo-sensitive layer; and infrared light is incident to the substrate from the graphical film. On the basis of a surface plasma enhanced absorption principle, the infrared detector can simultaneously realize detection for medium wave and long wave of infrared light by utilizing the periodic graphical film (such as a metal film); due to the combined action of the thermo-sensitive layer, the optical resonant cavity and the surface plasma enhanced effect, the absorption rate simultaneously for the medium wave and the long wave of the infrared light and device performances of the infrared detector are increased; and thus, relatively comprehensive and accurate detection information is provided for users.
Description
Technical field
The application is related to microelectronics technology, more particularly, it relates to a kind of Infrared Detectorss and preparation method thereof.
Background technology
Infrared imaging system is the system by target with the radiation generation scene image of background, can 24 hours round-the-clock works
Make, and hidden thermal target can be detected through camouflage.Infrared Detectorss are the core components of infrared imaging system, can be according to light
Electrical effect and pyroelectric effect are by incident infrared signal transformationization electric signal output.
The Infrared Detectorss of application have polytype at present, wherein the infrared acquisition made using microbolometer thermal technology
Device, MEMS (Micro-Electro-Mechanical System, MEMS) technique and device architecture is combined, is had
Good development prospect.
As, in atmospheric environment, the infra-red radiation of target object is only capable of at 1～2.5 μm, 3～5 μm and 8～14 μm three
Effectively could transmit in window.How to carry out detecting that to become this area urgently to be resolved hurrily for the infrared light in this wavelength band
Problem.
Current non refrigerating infrared imaging wave band is concentrated mainly on long wave infrared region (8 μm～14 μm), and imaging band position
It is fewer in the product of medium-wave infrared wave band (3 μm～5 μm), therefore the detection target of detector, scope and precision all receive
Very big restriction.
As LONG WAVE INFRARED imaging and medium-wave infrared are imaged each advantageous, and different spectral informations are provided, people just open
Whether beginning exploration can research and develop one kind can be while realize obtaining target in two wave bands of medium-wave infrared and LONG WAVE INFRARED
The Infrared Detectorss of the information of object.
The content of the invention
To solve above-mentioned technical problem, the invention provides a kind of Infrared Detectorss and preparation method thereof, to realize simultaneously
The purpose of the Infrared Detectorss of information on target object can be obtained in two wave bands of medium-wave infrared and LONG WAVE INFRARED.
To realize above-mentioned technical purpose, following technical scheme is embodiments provided：
A kind of Infrared Detectorss, including：
Substrate；
Positioned at the reflecting part of the substrate surface；
Deviate from the substrate side, and the hanging microbridge for arranging positioned at the reflecting part, the substrate is enclosed with the microbridge
Into cavity formed optical resonator；
The microbridge includes：Along the optical resonator to the support set gradually on the direction of the substrate side
Layer, heat-sensitive layer and passivation layer；
Deviate from the graphical thin film of the substrate side positioned at the passivation layer；Wherein,
The graphical thin film strengthens absorption for carrying out surface plasma to incident infrared light；The optical resonance
Chamber and the reflecting part are for the infrared light reflection by the substrate surface is incident to the heat-sensitive layer；The heat-sensitive layer is used for
The energy of the infrared light of infrared light and reflection to the graphical film absorption is absorbed and is converted into electric signal output.
Optionally, the material of the supporting layer is silicon nitride or silicon oxide or carborundum, and the span of its thickness is
50nm～250nm, including endpoint value；
The material of the heat-sensitive layer is vanadium oxide or titanium oxide or non-crystalline silicon or amorphous germanium or amorphous germanium silicon or the oxidation of germanium silicon
Thing, the span of its thickness is 30nm～200nm, including endpoint value；
The material of the passivation layer is silicon nitride or silicon oxide or carborundum, the span of its thickness be 50nm～
250nm, including endpoint value.
Optionally, the optical resonator be located between the reflecting part and the supporting layer, the reflecting part with it is described
The span of the distance between supporting layer is 10nm～1 μm, including endpoint value.
Optionally, the reflecting part and the span of the distance between the supporting layer are 300nm～700nm, including
Endpoint value.
Optionally, the material of the graphical thin film is default metal material；
The default metal material is can to produce surface plasma to strengthen the metal or alloy of absorption effect.
Optionally, the default metal material is at least one in gold, silver, aluminum, platinum, nickel, titanium and tungsten.
Optionally, the graphical thin film is the figure in periodic arrangement distribution.
Optionally, the figure in periodic arrangement distribution is the figure of array distribution or interleaves the figure that formula is distributed
Shape.
Optionally, the figure in periodic arrangement distribution is included in circle, triangle, rectangle, polygon at least
It is a kind of.
Optionally, the span of the circular diameter is 1.5 μm～2.1 μm, including endpoint value.
Optionally, the span in the circular cycle is 1 μm～3 μm, including endpoint value；
The circular cycle refers to the distance between center of circle of adjacent circular.
Optionally, the span of the thickness of the graphical thin film is 50nm～150nm, including endpoint value.
A kind of manufacture method of Infrared Detectorss, including：
Substrate is provided；
Reflecting layer is formed in the substrate surface；
Sacrifice layer is formed away from the substrate side in the reflecting layer；
Supporting layer is formed away from the substrate side in the sacrifice layer；
Heat-sensitive layer is formed away from the substrate side in the supporting layer simultaneously graphical；
Passivation layer is formed away from the substrate side in the heat-sensitive layer；
Graphical thin film is formed away from the substrate side in the microbridge；
Microbridge is etched, and removes the sacrifice layer, to discharge the microbridge.
Optionally, the material of the sacrifice layer includes any one in polyimides, silicon dioxide, polysilicon.
Optionally, the material of the heat-sensitive layer includes vanadium oxide, titanium oxide, non-crystalline silicon, amorphous germanium, amorphous germanium silicon or germanium silicon
Oxide.
Optionally, the material of the passivation layer includes any one in silicon nitride, silicon oxide, silicon oxynitride and carborundum；
The material of the supporting layer includes any one in silicon nitride, silicon oxide, silicon oxynitride and carborundum.
From above-mentioned technical proposal as can be seen that embodiments providing a kind of Infrared Detectorss and preparation method thereof,
The graphical thin film of the Infrared Detectorss can be realized strengthening infrared light surface plasma and be absorbed, and coordinate the reflecting part
With the collective effect of the optical resonator simultaneously, it is possible to increase the Infrared Detectorss are directed to medium-wave infrared and LONG WAVE INFRARED
Absorbance and device performance, have provided the user more fully accurately detection information.
And the Infrared Detectorss can be by controlling the optical resonator to the absorption characteristic of long wave infrared region
Height interval be modulated, the absorption characteristic of medium wave infrared band can be distributed by the figure to the graphical thin film
And size Selection is modulated.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can be with basis
The accompanying drawing of offer obtains other accompanying drawings.
A kind of one embodiment structural representations of Infrared Detectorss that provide of the Fig. 1 for the application；
A kind of specific embodiment detailed construction schematic diagrams of Infrared Detectorss that provide of the Fig. 2 for the application
One embodiment absorption spectrum schematic diagrams of Infrared Detectorss that provide of the Fig. 3 for the application；
Fig. 4 (a) and Fig. 4 (b) for the application the absorbance spectrum of Infrared Detectorss that provides of one embodiment with incidence
Angle change schematic diagram；
Fig. 4 (c) for the application the absorbance of Infrared Detectorss that provides of one embodiment with infrared light wavelength absorption
Curve；
Fig. 5 (a) is the structure of the patterned metal film in the Infrared Detectorss that provide of one embodiment of the application
Schematic cross-section；
Fig. 5 (b) is the structure of the patterned metal film in the Infrared Detectorss that provide of one embodiment of the application
Schematic top plan view；
Fig. 6 (a), (b), (c) and (d) are the patterned metal in the Infrared Detectorss that provide of one embodiment of the application
Figure distribution schematic diagram in thin film；
A kind of one embodiment schematic flow sheets of the manufacture method of Infrared Detectorss that provide of the Fig. 7 for the application；
Fig. 8 illustrates for a kind of flow process of the manufacture method of Infrared Detectorss that provides of a specific embodiment of the application
Figure；
A kind of one embodiment flow charts of the using method of Infrared Detectorss that provide of the Fig. 9 for the application.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than the embodiment of whole.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
The embodiment of the present application provides a kind of Infrared Detectorss, as shown in figure 1, including：
Substrate 10；
Positioned at the reflecting part 20 on 10 surface of the substrate；
Deviate from 10 side of the substrate, and the hanging microbridge 30 for arranging, the substrate 10 and institute positioned at the reflecting part 20
State the cavity formation optical resonator 40 that microbridge 30 is surrounded；
The microbridge 30 includes：Along the optical resonator 40 to setting gradually on the 10 side direction of the substrate
Supporting layer 31, heat-sensitive layer 32 and passivation layer 33；
Deviate from the graphical thin film 50 of 10 side of the substrate positioned at the passivation layer 33；Wherein,
The formation of the graphical thin film 50 so that the interface between the graphical thin film 50 and the passivation layer 33,
Surface plasma excimer effect is produced, the effect promotes the influx and translocation of infrared light；The optical resonator 40 and described anti-
Portion 20 is penetrated for the infrared light reflection by 10 surface of the substrate is incident to the heat-sensitive layer 32；It is right that the heat-sensitive layer 32 is used for
The infrared light and the energy of the infrared light of reflection that the graphical thin film 50 absorbs is absorbed and is converted into electric signal output.
The embodiment of the present application can be realized to infrared light using the graphical thin film 50 there is provided the Infrared Detectorss
Surface plasma strengthen and absorb, and the infrared light to two wave bands of medium-wave infrared and LONG WAVE INFRARED can be realized simultaneously
Strengthen and absorb, the surface plasma enhancement effect of the graphical thin film 50 coordinates the reflecting part 20 and the optical resonance
The collective effect in chamber 40, can improve absorbance of the Infrared Detectorss to two wave bands of medium-wave infrared and LONG WAVE INFRARED simultaneously
And device performance, provide the user more fully accurately detection information.
And the Infrared Detectorss can be by controlling the optical resonator to the absorption characteristic of long wave infrared region
40 height interval is modulated, can be by the figure to the graphical thin film 50 to the absorption characteristic of medium wave infrared band
Distribution and size Selection are modulated.
On the basis of above-described embodiment, a specific embodiment of the application provides a kind of the concrete of Infrared Detectorss
Structure, as shown in Fig. 2 in fig 2, label 60 represents the Metal contact electrode being connected with peripheral circuit.
The material of the supporting layer 31 is any one in silicon nitride or silicon oxide or carborundum, the value model of its thickness
Enclose for 50nm～250nm, including endpoint value；The application is to the concrete material category of the supporting layer 31 and specifically taking for thickness
Value is not limited, concrete depending on practical situation.
The material of the heat-sensitive layer 32 is vanadium oxide or titanium oxide or non-crystalline silicon or amorphous germanium or amorphous germanium silicon or germanium silica
Compound, the span of its thickness is 30nm～200nm, including endpoint value；But in the other embodiment of the application, the heat
As long as the material of photosensitive layer 32 is thermal resistance material.Concrete material category and the tool of thickness of the application to the heat-sensitive layer 32
Body value is not limited, concrete depending on practical situation.
The material of the passivation layer 33 is silicon nitride or silicon oxide or carborundum, the span of its thickness be 50nm～
250nm, including endpoint value.The application is not limited to the concrete value of the concrete material category and thickness of the passivation layer 33
It is fixed, it is concrete depending on practical situation.
Specifically, in a specific embodiment of the application, the supporting layer 31 uses silicon nitride material, using etc. from
Daughter strengthens chemical vapour deposition technique (Plasma Enhanced Chemical Vapor Deposition, PECVD) and makes,
Thickness is between 0.1～1 μm.Heat-sensitive layer 32 uses vanadium oxide material, using magnetically controlled sputter method make, thickness be about 30～
200nm.It is 100～500W that sputtering power is controlled during sputtering, and partial pressure of oxygen is 0.5%～10%, and sputtering time is 5～60min, is splashed
Thermosensitive film is annealed after the completion of penetrating to improve its sensitive characteristic, annealing temperature is 200～600 DEG C.Passivation layer 33 is used
Silicon nitride material, using plasma strengthen chemical vapour deposition technique (Plasma Enhanced Chemical Vapor
Deposition, PECVD) make, thickness is between 0.1～1 μm.Graphical thin film 50 on 30 bridge floor of the microbridge is one layer
Metal dish structure, for enhanced highpass filtering.The metal dish structure can be circle, a kind of or many in rectangle, polygon
Kind, thickness is 40nm～150nm, including endpoint value.
On the basis of above-described embodiment, in another embodiment of the application, the optical resonator 40 is located at institute
State between reflecting part 20 and the supporting layer 31, the reflecting part 20 with the span of the distance between the supporting layer 31 is
10nm～1 μm, including endpoint value.Specifically, the distance between reflecting part 20 and supporting layer 31 correspond to the optical resonance
The height in chamber 40, when height is 10nm～1 μm, can realize long wave and medium wave dual band absorption simultaneously；When the optical resonance
When the reduced height in chamber 40 is to 300nm～700nm scopes, it is capable of achieving (8～14 μm) of long wave and all absorbs, minimal absorption rate exists
More than 70%, medium wave absorbs peak position to be occurred near 5 μm, 4 μm, 3 μm, and absorbance is more than 85%.Specifically can as shown in figure 3,
Long wave all absorbs, and minimal absorption rate is more than 70%；There is absworption peak near 4.8 μm and near 3 μm in medium wave, and absorbance exists
More than 85%, in fig. 3, label H represents the height of the optical resonator 40, and label D represents that composition is described graphical thin
The distance between two neighboring disk of film 50, label L represent the diameter of disk, and the value of D+L is the cycle of the disk.It is described
Infrared Detectorss can realize that wide angle is detected, and shown in such as Fig. 4 (a), Fig. 4 (b) and Fig. 4 (c), show when infrared in Fig. 4 (a)
When light wave is a length of 4.8 μm, the change curve of the absorbance of the Infrared Detectorss with the angle of incidence of infrared light；Illustrate in Fig. 4 (b)
When infrared optical wavelength is 10 μm, the change curve of the absorbance of the Infrared Detectorss with the angle of incidence of infrared light；Fig. 4
Show in (c) when the angle of incidence of infrared light is 45 °, the absorbance of the Infrared Detectorss is bent with the absorption of infrared light wavelength
Line.Fig. 4 (a), Fig. 4 (b) and Fig. 4 (c) illustrate that the Infrared Detectorss can be while realize to medium-wave infrared and LONG WAVE INFRARED
The absorbing detection of the infrared light of two wave bands, and when the angle of incidence of infrared light is 45 °, the Infrared Detectorss can be realized
Multiband INFRARED ABSORPTION.
On the basis of above-described embodiment, in a preferred embodiment of the application, the material of the graphical thin film 50
Expect to preset metal material；
The default metal material is can to produce surface plasma to strengthen the metal or alloy of absorption effect.
Specifically, in one embodiment of the application, the default metal material is gold, silver, aluminum, platinum, nickel, titanium and tungsten
In at least one.I.e. described default metal material can for gold silver or aluminum or platinum or nickel or titanium or tungsten, can also be gold,
Any alloy of two or more in silver, aluminum, platinum, nickel, titanium and tungsten.The application to the concrete species of the default metal material and
Composition is not limited, concrete depending on practical situation.
In the other embodiment of the application, 50 material of graphical thin film can also be other engineers or synthesis
Can produce surface plasma strengthen absorption effect material, the application is not limited to this, specifically regarding practical situation
Depending on.
In order to strengthen assimilation effect, in a preferred embodiment of the application, the graphical thin film 50 can be in
The figure of periodic arrangement distribution.Such as the figure of array distribution or figure etc. of formula distribution is interleave, and the figure can be with
For various shapes, such as one or more in circle, triangle, rectangle, polygon.Figure in periodic arrangement distribution can be with
Array is formed according to certain rule or irregular arrangement, on the one hand can realizing simultaneously, whole absorptions of far infrared long wave,
The absorbance of long wave is improved, on the other hand can also be strengthened the absorption region of medium wave and be improved absorbance.Graphical thin film 50
Concrete structure, shape and distribution can be found in Fig. 5 and Fig. 6.Wherein, Fig. 5 (a) is periodic structure sectional view；Fig. 5 (b) is week
Phase property structure top view, wherein L are metal dish diameter, and D is represented between the adjacent metal disk for constituting the graphical thin film 50
Distance, the value of D+L are the cycle of the metal dish, and t is metal disc thickness；Fig. 6 (a) is the one kind in periodic unit CU, can be with
Increase the number of metal dish successively and adopt array way, enrich the definition of CU；Periodic unit regular array is flat in top layer
Face, it is possible to achieve m n array, Fig. 6 (b) are array arrangement plane of structure figure.Cycle size in each CU is identical or different, week
Phase difference can strengthen medium wave band absorption region.As m=0, only longitudinal direction is arranged, shown in such as Fig. 6 (c)；As n=0, only
Have transversely arranged；When m and n are not zero, the cycle size of the distance between horizontal and vertical CU d and difference CU is defined,
Different m n arrays are can be designed that, realizes absorbing the purpose of different-waveband simultaneously, while can also be to the tune of absorption peak position
Control is more flexible；Further, some or all of CU in upper figure can be replaced by above-mentioned m n array.Periodic unit is not
When specification is arranged, to interleave formula arrangement, such as Fig. 6 (d) is shown for one of which.
Optionally, in one embodiment of the application, in periodic arrangement distribution figure for circle, the circle it is straight
The span in footpath is 1 μm～3 μm, including endpoint value；In the preferred embodiment of the application, the circular diameter takes
Value scope is 1.5 μm～2.1 μm, including endpoint value.
Optionally, the span in the circular cycle is 1 μm～3 μm, including endpoint value；
The circular cycle refers to the distance between center of circle of adjacent circular.
Optionally, the span of the thickness of the graphical thin film 50 is 50nm～150nm, including endpoint value.
Illustrate, in another specific embodiment of the application, the material of each layer of the Infrared Detectorss is respectively
Si (substrate 10), Au (graphical thin film 20), SiN (supporting layer 31), VO2(heat-sensitive layer 32), SiN (passivation layer 33), Au (figures
Change thin film 50), in the present embodiment, the thickness of silicon substrate is set to 500nm, the reflector thickness is 100nm, the optics
40 height of resonator cavity is 500nm, and the supporting layer 31 and 33 thickness of passivation layer are 200nm, and golden disc thickness is 50nm, is shaped as circle
Shape, a diameter of 1.6 μm, the cycle is set to 2.7 μm.
Accordingly, the embodiment of the present application additionally provides a kind of manufacture method of Infrared Detectorss, as shown in fig. 7, comprises：
S101：Substrate is provided；
S102：Reflecting layer is formed in the substrate surface；
S103：Sacrifice layer is formed away from the substrate side in the reflecting layer；
S104：Supporting layer is formed away from the substrate side in the sacrifice layer；
S105：Heat-sensitive layer is formed away from the substrate side in the supporting layer simultaneously graphical；
S106：Passivation layer is formed away from the substrate side in the heat-sensitive layer；
S107：Graphical thin film is formed away from the substrate side in the passivation layer；
S108：Microbridge is etched, and removes the sacrifice layer, to discharge the microbridge.
It should be noted that in the present embodiment, not to the Infrared Detectorss and peripheral circuit, such as reading circuit
The isostructural preparation flow of electrode, via and through hole being connected is illustrated.
On the basis of above-described embodiment, a specific embodiment of the application provides a kind of preparation of Infrared Detectorss
Method, as shown in figure 8, including：
S201, is coated with gold thin film on substrate and graphically forms reflecting layer and reading circuit electrode；
S202, forms sacrifice layer on the substrate for forming reflecting layer and reading circuit electrode；
S203, forms through hole on the sacrifice layer；
S204, forms supporting layer on the sacrifice layer；
S205, forms heat-sensitive layer simultaneously graphical on the supporting layer；
S206, forms passivation layer on the heat-sensitive layer；
S207, etching reading circuit electrode contact hole and heat-sensitive layer contact hole；
S208, forms metal contact hole electrode on the passivation layer for etching circuit electrode contact hole and heat-sensitive layer contact hole
Layer is simultaneously graphical；
S209, forms patterned metal film on the passivation layer for forming metal contact hole electrode layer；
S210, etches microbridge, and removes the sacrifice layer, discharges microbridge.
Using Infrared Detectorss provided in an embodiment of the present invention, surface etc. can be carried out to infrared light using graphical thin film
Gas ions strengthen and absorb, so as under the collective effect of reflecting part, optical resonator and surface plasma enhancement effect, greatly
The big device that improves is to infrared medium wave and the absorbance and device performance of long wave, there is provided more fully accurate detection information.
Optionally, the sacrificial layer material includes the nature materials such as polyimides, silicon dioxide, polysilicon and artificial material
In any one.
Optionally, the material of the heat-sensitive layer includes vanadium oxide, titanium oxide, non-crystalline silicon, amorphous germanium, amorphous germanium silicon or germanium silicon
Oxide.
Optionally, the material of the passivation layer includes any one in silicon nitride, silicon oxide, silicon oxynitride or carborundum；
The material of the supporting layer includes any one in silicon nitride, silicon oxide, silicon oxynitride or carborundum.
Optionally, the material of the metal contact hole electrode layer includes any one in titanium, aluminum, titanium nitride, vanadium.
The manufacture method of the Infrared Detectorss provided to the present invention below by specific embodiment is described in detail.
The first step, makes underlying structure：One layer of gold thin film is coated with silicon substrate substrate using electron beam evaporation method, is
Increase the adhesiveness of silicon substrate and gold thin film, one layer of chromium thin film of middle addition is completed also with electron beam evaporation method, thick
Degree is about 1/10th of gold thin film thickness.Realized graphically by stripping technology, dry etching or wet etching method again,
Reflecting layer and two reading circuit electrodes are formed on the same end face of silicon substrate substrate.Used as an example of this example, silicon is thick
Degree is set to 500nm, and reflector thickness can be 50nm, and chromium thin film thickness is 5nm；
Second step, makes sacrifice layer：To photosensitive polyimide or non-photosensitivity type polyimides using spin coating method come
Make the sacrifice layer；Or, to silicon dioxide or polysilicon using the method for chemical vapor deposition making sacrifice layer；
3rd step, makes sacrifice layer through hole：By photoetching method in the sacrifice layer by made by photosensitive polyimide
Upper making sacrifice layer through hole；Or, by dry etching method by non-photosensitivity type polyimides, silicon dioxide or polysilicon
Made by sacrifice layer through hole is made on the sacrifice layer；
4th step, makes supporting layer：Using any one of silicon nitride, silicon oxide, silicon oxynitride or carborundum material
Material, using plasma strengthen chemical vapour deposition technique and are made；
5th step, makes heat-sensitive layer：Vanadium oxide is coated with to form the heat-sensitive layer using reactive sputtering method；Or, it is right
Amorphous silicon using plasma strengthens chemical vapour deposition technique and is coated with to form the heat-sensitive layer, then passes through dry etching reality again
It is now graphical；
6th step, makes passivation layer：Using any one of silicon nitride, silicon oxide, silicon oxynitride or carborundum material
Material, using plasma strengthen chemical vapour deposition technique and are made；
7th step, makes reading circuit electrode contact hole and heat-sensitive layer contact hole：Using oxygen and fluoroform mixing structure
Into etching gas, reading circuit electrode contact hole and heat-sensitive layer contact hole are formed using dry etching method；
8th step, makes metal contact hole electrode layer：A kind of metal in using titanium, aluminum, titanium nitride, vanadium, using electronics
Beam evaporation or magnetron sputtering make the Metal contact electrode hole, are then realized by dry etching method again graphical；
9th step, makes golden disk array structure：According to setting the figure of periodic unit, diameter, cycle, spacing and not
Realize graphically, realizing array structure with the relevant parameter in array.The preparation of golden disk can use two methods：First is stripping
Separating process, i.e., first prepare photoetching offset plate figure, then prepare metallic film, reuse acetone equal solvent remove photoetching offset plate figure so as to
Metallic pattern is left on surface.Second is etching technics.Metallic film is first prepared, photoetching offset plate figure is then prepared, recycle etc.
The metal etch for not having photoresist to block is removed by gas ions dry etching method, is finally removed photoresist, needed for staying
Metallic pattern.
Tenth step, etches microbridge, removes the sacrifice layer, discharges microbridge：First etched using dry etching method micro-
Bridge；The sacrifice layer is removed using following method again：Removed by photosensitive polyimide or non-using oxygen plasma dry method
The sacrifice layer made by photosensitive polyimide；Or, removed using hydrogen fluoride gas described sacrificial by made by silicon dioxide
Domestic animal layer；Or, the sacrifice layer by made by polysilicon is removed using xenon fluoride.
Accordingly, as shown in figure 9, the present invention also provides a kind of making for any one Infrared Detectors that previous embodiment is provided
With method, including：
S301, it is special by absorption of the height for the controlling resonator cavity interval modulation Infrared Detectorss to long wave infrared region
Property, including long wave peak position, wide-spectrum absorption characteristic and absorbance；Specifically, resonator cavity height is controlled at 300 nanometers to 700 nanometers
Between, between 8 microns to 9.3 microns, it is that minimal absorption rate exists between 8 microns to 14 microns to absorb wide range to long wave peak position
More than 70%；
S302, modulates the infrared acquisition by the figure distribution to graphical thin film and size Selection and equips red to medium wave
The absorption characteristic of wave section, including medium wave peak position, wide-spectrum absorption characteristic and absorbance；Specifically, control the diameter of metallic film
It is interval between 1.5 microns to 2.1 microns, medium wave peak position between 4.3 microns to 5 microns, while occurring near 3 microns；
S303, by the selection of figure and size to graphical thin film, realizes double wave crest location, absorbs wide spectral characteristics
With the further regulation and control of absorbance.
In sum, the embodiment of the present application provides a kind of Infrared Detectorss and preparation method thereof, the Infrared Detectorss
Graphical thin film can realize strengthening the surface plasma of infrared light and absorb such that it is able to realize simultaneously to medium-wave infrared
Enhancing with LONG WAVE INFRARED two waveband absorbs, and coordinates the collective effect of the reflecting part and the optical resonator, improves described
Absorbance and device performance of the Infrared Detectorss to two wave bands of medium-wave infrared and LONG WAVE INFRARED, have provided the user more fully
Accurate detection information.
And it is special by absorption of the height for the controlling resonator cavity interval modulation Infrared Detectorss to long wave infrared region
Property, including long wave peak position, wide-spectrum absorption characteristic and absorbance；By figure distribution and size Selection modulation to graphical thin film
Absorption characteristic of the Infrared Detectorss to medium wave infrared band, including medium wave peak position, wide-spectrum absorption characteristic and absorbance；Pass through
Figure and size Selection to graphical thin film, further regulates and controls double wave crest location, absorbs wide spectral characteristics and absorbance.
In this specification, each embodiment is described by the way of progressive, and what each embodiment was stressed is and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or using the present invention.
Various modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope for causing.
Claims (16)
1. a kind of Infrared Detectorss, it is characterised in that include：
Substrate；
Positioned at the reflecting part of the substrate surface；
Deviate from the substrate side, and the hanging microbridge for arranging positioned at the reflecting part, the substrate is surrounded with the microbridge
Cavity forms optical resonator；
The microbridge includes：Along the optical resonator to the supporting layer, heat set gradually on the direction of the substrate side
Photosensitive layer and passivation layer；
Deviate from the graphical thin film of the substrate side positioned at the passivation layer；Wherein,
The graphical thin film strengthens absorption for carrying out surface plasma to incident infrared light；The optical resonator and
The reflecting part is for the infrared light reflection by the substrate surface is incident to the heat-sensitive layer；The heat-sensitive layer is for institute
The energy for stating the infrared light of graphical film absorption and the infrared light of reflection is absorbed and is converted into electric signal output.
2. Infrared Detectorss according to claim 1, it is characterised in that the material of the supporting layer is silicon nitride or oxidation
Silicon or carborundum, the span of its thickness is 50nm～250nm, including endpoint value；
The material of the heat-sensitive layer is vanadium oxide or titanium oxide or non-crystalline silicon or amorphous germanium or amorphous germanium silicon or germanium Si oxide, its
The span of thickness is 30nm～200nm, including endpoint value；
The material of the passivation layer is silicon nitride or silicon oxide or carborundum, and the span of its thickness is 50nm～250nm, is wrapped
Include endpoint value.
3. Infrared Detectorss according to claim 1, it is characterised in that the optical resonator be located at the reflecting part with
Between the supporting layer, the reflecting part is 10nm～1 μm with the span of the distance between the supporting layer, including end points
Value.
4. Infrared Detectorss according to claim 1, it is characterised in that between the reflecting part and the supporting layer away from
From span be 300nm～700nm, including endpoint value.
5. Infrared Detectorss according to claim 1, it is characterised in that the material of the graphical thin film is default metal
Material；
The default metal material is can to produce surface plasma to strengthen the metal or alloy of absorption effect.
6. Infrared Detectorss according to claim 5, it is characterised in that the default metal material be gold, silver, aluminum, platinum,
At least one in nickel, titanium and tungsten.
7. Infrared Detectorss according to claim 1, it is characterised in that the graphical thin film is in periodic arrangement point
The figure of cloth.
8. Infrared Detectorss according to claim 7, it is characterised in that the figure in periodic arrangement distribution is battle array
The figure of column distribution interleaves the figure that formula is distributed.
9. Infrared Detectorss according to claim 7, it is characterised in that the figure in periodic arrangement distribution includes
At least one in circle, triangle, rectangle, polygon.
10. Infrared Detectorss according to claim 9, it is characterised in that the span of the circular diameter is 1.5
μm～2.1 μm, including endpoint value.
11. Infrared Detectorss according to claim 10, it is characterised in that the span in the circular cycle is 1 μ
M～3 μm, including endpoint value；
The circular cycle refers to the distance between center of circle of adjacent circular.
12. Infrared Detectorss according to claim 1, it is characterised in that the value model of the thickness of the graphical thin film
Enclose for 50nm～150nm, including endpoint value.
13. a kind of manufacture methods of Infrared Detectorss, it is characterised in that include：
Substrate is provided；
Reflecting layer is formed in the substrate surface；
Sacrifice layer is formed away from the substrate side in the reflecting layer；
Supporting layer is formed away from the substrate side in the sacrifice layer；
Heat-sensitive layer is formed away from the substrate side in the supporting layer simultaneously graphical；
Passivation layer is formed away from the substrate side in the heat-sensitive layer；
Graphical thin film is formed away from the substrate side in the microbridge；
Microbridge is etched, and removes the sacrifice layer, to discharge the microbridge.
14. methods according to claim 13, it is characterised in that the material of the sacrifice layer includes polyimides, dioxy
Any one in SiClx, polysilicon.
15. methods according to claim 13, it is characterised in that the material of the heat-sensitive layer include vanadium oxide, titanium oxide,
Non-crystalline silicon, amorphous germanium, amorphous germanium silicon or germanium Si oxide.
16. methods according to claim 13, it is characterised in that
The material of the passivation layer includes any one in silicon nitride, silicon oxide, silicon oxynitride and carborundum；
The material of the supporting layer includes any one in silicon nitride, silicon oxide, silicon oxynitride and carborundum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610971868.5A CN106517077B (en) | 2016-10-28 | 2016-10-28 | A kind of infrared detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610971868.5A CN106517077B (en) | 2016-10-28 | 2016-10-28 | A kind of infrared detector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106517077A true CN106517077A (en) | 2017-03-22 |
| CN106517077B CN106517077B (en) | 2019-02-05 |
Family
ID=58326104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610971868.5A Active CN106517077B (en) | 2016-10-28 | 2016-10-28 | A kind of infrared detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106517077B (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107117579A (en) * | 2017-05-11 | 2017-09-01 | 烟台睿创微纳技术股份有限公司 | A kind of double-deck polarization non-refrigerated infrared detector structure and preparation method thereof |
| CN108163803A (en) * | 2017-12-26 | 2018-06-15 | 中国计量大学 | A kind of MEMS three-dimensional tunnel structures |
| CN108565310A (en) * | 2017-12-14 | 2018-09-21 | 上海集成电路研发中心有限公司 | A kind of infrared detector and its manufacturing method |
| CN111048606A (en) * | 2019-12-25 | 2020-04-21 | 武汉邮电科学研究院有限公司 | Germanium-silicon photoelectric detector with high bandwidth and high responsivity |
| CN111261733A (en) * | 2020-01-21 | 2020-06-09 | 苏州众为光电有限公司 | Adjustable near-infrared broadband light absorption enhancement structure |
| CN111261734A (en) * | 2020-01-21 | 2020-06-09 | 苏州众为光电有限公司 | Near-infrared broadband light absorption enhancement structure based on graphene-metal micro-nano array |
| CN112582495A (en) * | 2020-12-03 | 2021-03-30 | 无锡中微晶园电子有限公司 | Infrared enhanced silicon-based photoelectric detector |
| CN112645277A (en) * | 2020-12-11 | 2021-04-13 | 上海集成电路研发中心有限公司 | Novel infrared detector and preparation method thereof |
| CN112730945A (en) * | 2020-12-21 | 2021-04-30 | 上海交通大学 | Flexible MEMS flow velocity sensor based on self-heating amorphous germanium thermal resistor |
| CN113432726A (en) * | 2021-06-25 | 2021-09-24 | 北京北方高业科技有限公司 | Infrared detector with combined columnar structure |
| CN113735053A (en) * | 2021-08-30 | 2021-12-03 | 武汉大学 | Micro-electromechanical infrared sensor and preparation method thereof |
| CN114335202A (en) * | 2021-11-30 | 2022-04-12 | 北京理工大学 | Preparation method of infrared photosensitive element, infrared photosensitive element and infrared spectrometer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080237467A1 (en) * | 2007-03-27 | 2008-10-02 | Nec Corporation | Bolometer-type thz-wave detector |
| CN102175329A (en) * | 2010-12-01 | 2011-09-07 | 烟台睿创微纳技术有限公司 | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane |
| EP2602598A1 (en) * | 2011-12-09 | 2013-06-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Bolometric detector for electromagnetic radiation in the terahertz spectral band and detector matrix comprising such detectors |
| CN104535197A (en) * | 2014-12-29 | 2015-04-22 | 杭州士兰集成电路有限公司 | Thermopile infrared detector and manufacturing method thereof |
| CN104953223A (en) * | 2015-07-13 | 2015-09-30 | 电子科技大学 | Helical antenna coupled micro-bridge structure and preparation method thereof |
-
2016
- 2016-10-28 CN CN201610971868.5A patent/CN106517077B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080237467A1 (en) * | 2007-03-27 | 2008-10-02 | Nec Corporation | Bolometer-type thz-wave detector |
| CN102175329A (en) * | 2010-12-01 | 2011-09-07 | 烟台睿创微纳技术有限公司 | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane |
| EP2602598A1 (en) * | 2011-12-09 | 2013-06-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Bolometric detector for electromagnetic radiation in the terahertz spectral band and detector matrix comprising such detectors |
| CN104535197A (en) * | 2014-12-29 | 2015-04-22 | 杭州士兰集成电路有限公司 | Thermopile infrared detector and manufacturing method thereof |
| CN104953223A (en) * | 2015-07-13 | 2015-09-30 | 电子科技大学 | Helical antenna coupled micro-bridge structure and preparation method thereof |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107117579A (en) * | 2017-05-11 | 2017-09-01 | 烟台睿创微纳技术股份有限公司 | A kind of double-deck polarization non-refrigerated infrared detector structure and preparation method thereof |
| CN108565310A (en) * | 2017-12-14 | 2018-09-21 | 上海集成电路研发中心有限公司 | A kind of infrared detector and its manufacturing method |
| CN108565310B (en) * | 2017-12-14 | 2020-03-31 | 上海集成电路研发中心有限公司 | Infrared detector and manufacturing method thereof |
| CN108163803A (en) * | 2017-12-26 | 2018-06-15 | 中国计量大学 | A kind of MEMS three-dimensional tunnel structures |
| CN111048606A (en) * | 2019-12-25 | 2020-04-21 | 武汉邮电科学研究院有限公司 | Germanium-silicon photoelectric detector with high bandwidth and high responsivity |
| CN111048606B (en) * | 2019-12-25 | 2021-06-29 | 武汉邮电科学研究院有限公司 | Germanium-silicon photoelectric detector with high bandwidth and high responsivity |
| CN111261733B (en) * | 2020-01-21 | 2021-12-14 | 苏州众为光电有限公司 | Adjustable near-infrared broadband light absorption enhancement structure |
| CN111261733A (en) * | 2020-01-21 | 2020-06-09 | 苏州众为光电有限公司 | Adjustable near-infrared broadband light absorption enhancement structure |
| CN111261734A (en) * | 2020-01-21 | 2020-06-09 | 苏州众为光电有限公司 | Near-infrared broadband light absorption enhancement structure based on graphene-metal micro-nano array |
| CN112582495A (en) * | 2020-12-03 | 2021-03-30 | 无锡中微晶园电子有限公司 | Infrared enhanced silicon-based photoelectric detector |
| CN112582495B (en) * | 2020-12-03 | 2024-04-09 | 无锡中微晶园电子有限公司 | Infrared reinforced silicon-based photoelectric detector |
| CN112645277A (en) * | 2020-12-11 | 2021-04-13 | 上海集成电路研发中心有限公司 | Novel infrared detector and preparation method thereof |
| CN112645277B (en) * | 2020-12-11 | 2023-11-07 | 上海集成电路研发中心有限公司 | Novel infrared detector and preparation method |
| CN112730945A (en) * | 2020-12-21 | 2021-04-30 | 上海交通大学 | Flexible MEMS flow velocity sensor based on self-heating amorphous germanium thermal resistor |
| CN113432726A (en) * | 2021-06-25 | 2021-09-24 | 北京北方高业科技有限公司 | Infrared detector with combined columnar structure |
| CN113432726B (en) * | 2021-06-25 | 2023-03-24 | 北京北方高业科技有限公司 | Infrared detector with combined columnar structure |
| CN113735053A (en) * | 2021-08-30 | 2021-12-03 | 武汉大学 | Micro-electromechanical infrared sensor and preparation method thereof |
| CN113735053B (en) * | 2021-08-30 | 2024-01-30 | 武汉大学 | Micro-electromechanical infrared sensor and preparation method thereof |
| CN114335202A (en) * | 2021-11-30 | 2022-04-12 | 北京理工大学 | Preparation method of infrared photosensitive element, infrared photosensitive element and infrared spectrometer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106517077B (en) | 2019-02-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106517077B (en) | A kind of infrared detector and preparation method thereof | |
| CN106352989B (en) | A kind of production method and structure of non-refrigerated infrared focal plane probe microbridge | |
| CN106298827B (en) | A kind of non-refrigerated infrared focal plane probe pixel and preparation method thereof | |
| JP5597862B2 (en) | Bolometer type THz wave detector | |
| CN110118604B (en) | Wide-spectrum microbolometer based on mixed resonance mode and preparation method thereof | |
| US20140291704A1 (en) | Plasmonic ir devices | |
| CN102175329A (en) | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane | |
| CN103940518B (en) | A kind of terahertz detection unit micro-bridge structure of low thermal conductance and preparation method thereof | |
| US9488577B2 (en) | Miniature gas sensor | |
| CN106082106B (en) | A kind of broadband non-refrigerated infrared detector and preparation method thereof | |
| CN107340063B (en) | Thermal detector and preparation method thereof | |
| JP2008241439A (en) | Bolometer type thz wave detector | |
| CN104953223B (en) | A kind of helical antenna coupling micro-bridge structure and preparation method thereof | |
| CN109813449A (en) | A kind of integrated polarizing non-refrigerated infrared detector and production method | |
| CN106124066A (en) | The microbolometer of a kind of high fill factor and preparation method | |
| CN105129717B (en) | A kind of micro-bridge structure of broadband high-selenium corn THz wave and preparation method thereof | |
| CN106340561A (en) | Novel uncooled infrared focal plane detector pixel and fabrication method thereof | |
| US10825857B2 (en) | Pixel for uncooled infrared focal plane detector and preparation method therefor | |
| CN105811061B (en) | A kind of bridge leg separate antenna coupling micro-bridge structure and preparation method thereof | |
| CN109813446A (en) | A kind of composite absorption film layer non-refrigerating infrared focal plane and production method | |
| CN104078526A (en) | Terahertz wave room temperature detection unit of integrated infrared shielding structure and manufacturing method | |
| CN108358157A (en) | A kind of Meta Materials micro-bridge structure and preparation method thereof | |
| CN202066596U (en) | Infrared detector and multiband uncooled infrared focal plane | |
| JP2016065786A (en) | Infrared radiating element, manufacturing method thereof, and gas analyzer | |
| CN110095185B (en) | Terahertz wave detection microbridge structure integrated with sub-wavelength metal ring absorption structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |