CN114335202A - Preparation method of infrared photosensitive element, infrared photosensitive element and infrared spectrometer - Google Patents
Preparation method of infrared photosensitive element, infrared photosensitive element and infrared spectrometer Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 98
- 238000010521 absorption reaction Methods 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 238000002955 isolation Methods 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 22
- 239000002131 composite material Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000002096 quantum dot Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- AZCUJQOIQYJWQJ-UHFFFAOYSA-N oxygen(2-) titanium(4+) trihydrate Chemical group [O-2].[O-2].[Ti+4].O.O.O AZCUJQOIQYJWQJ-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The disclosure relates to a preparation method of an infrared photosensitive element, the infrared photosensitive element and an infrared spectrometer, wherein the method comprises the following steps: providing a substrate; forming an optical resonant cavity including a bragg mirror at one side of a substrate; wherein, the Bragg reflector is formed by stacking film layers; an infrared absorbing layer is formed in the optical resonator on the side of the bragg mirror facing away from the substrate. Therefore, the optical resonant cavity with the Bragg reflector and the infrared absorption layer are integrally manufactured by using a solution and an evaporation method, so that on one hand, the optical path structure of the light splitting system is simplified, and the occupied space is reduced; on the other hand, the manufacturing process is simplified, and the cost is reduced; meanwhile, the Bragg reflector has specific frequency selectivity, so that infrared light in a wave band to be detected penetrates through the Bragg reflector and is absorbed by the infrared absorption layer. The infrared photosensitive element prepared by the method is applied to the spectrometer, so that the spectrometer has the characteristics of miniaturization, compact structure, low power consumption and portability, and can measure infrared light of a single waveband accurately and quickly.
Description
Technical Field
The disclosure relates to the technical field of optical detection, and in particular relates to a preparation method of an infrared photosensitive element, the infrared photosensitive element and an infrared spectrometer.
Background
The spectrum analyzer is a scientific instrument which decomposes complex light with complex components into spectral lines and carries out measurement and calculation, is widely applied to the fields of radiometric analysis, color measurement, chemical component analysis and the like, and plays an important role in the industries of metallurgy, geology, hydrology, medicine, petrochemical industry, environmental protection, universe exploration and the like. In the lighting industry, spectrometers are commonly used to measure light color parameters of light sources.
The spectrometer generally comprises a light splitting system, a receiving system and a data processing system, and the working principle of the spectrometer is to separate polychromatic light emitted by a light source according to different wavelengths, measure spectral line intensity by matching with various photoelectric detectors to obtain spectral power (radiation) distribution, and then calculate photochromic performance parameters such as chromaticity coordinates, color temperature, color rendering index, luminous flux, radiation flux and the like. The spectroscopic system is typically made as a monolithic structure, called a monochromator or polychromator. The monochromator is an optical instrument for outputting monochromatic spectral lines, and generally works in cooperation with a receiving system with a photomultiplier Tube (PMT) detector as a core, and then a data processing system calculates and processes measurement signals, and each part is relatively independent. The polychromator is structurally closely coupled to the detector and the data processing system and can generally output spectroscopic measurement data directly.
The spectrometer can be a prism spectrometer, a grating spectrometer and a color filter spectrometer according to the type of the light splitting system; the number of the optical paths can be divided into: a single-path spectrometer and a multi-path spectrometer; the method can be classified according to the types of the detectors and can comprise the following steps: the visible light range mainly comprises a PMT spectrometer and a Charge Coupled Device (CCD) spectrometer, and the ultraviolet and near infrared range also comprises a special detector type; the scanning method can be divided into: mechanical scanning spectrometers and fast scanning spectrometers; classified by the purpose of the measurement object and the measurement result, may include: a spectrometer for analysis and a spectrometer for light color measurement. However, no matter which spectrometer is basically composed of a light splitting system, a receiving system and a data processing system, some spectrometers also need a light source, and due to the complexity of multiple components and the requirement for optical path length (as shown in fig. 1), the spectrometers have the characteristics of large size, complex structure, large power consumption and difficulty in portability.
Disclosure of Invention
In order to solve the technical problem or at least partially solve the technical problem, the present disclosure provides a method for manufacturing an infrared photosensitive element, an infrared photosensitive element and an infrared spectrometer.
The present disclosure provides a method for manufacturing an infrared photosensitive element, the method comprising:
providing a substrate;
forming an optical resonant cavity including a bragg mirror at one side of the substrate; wherein the Bragg reflector is formed by stacking film layers;
and forming an infrared absorption layer on one side of the Bragg reflector, which is away from the substrate, and in the optical resonant cavity.
In some embodiments, forming the bragg mirror on one side of the substrate comprises:
forming a laminated N-layer composite film layer on one side of the substrate; wherein N is more than or equal to 1 and less than or equal to 4, and N is an integer;
forming an additional layer on the side of the composite film layer away from the substrate;
wherein forming each of the composite film layers comprises:
forming a first film layer;
forming a second film layer on one side of the first film layer, which is far away from the substrate;
wherein the first film layer has a refractive index greater than the second film layer, and the additional layer has a refractive index greater than the second film layer.
In some embodiments, the thickness of the first film layer, the thickness of the second film layer, and the thickness of the additional layer satisfy:
nHtH＝nLtL＝nFtF＝λ0/4；
wherein n isHRepresents the thickness of the first film layer, tHRepresenting the refractive index of the first film layer, nLRepresents the secondThickness of the film layer, tLRepresenting the refractive index of the second film layer, nFRepresents the thickness of the additional layer, tFRepresenting the refractive index, λ, of the additional layer0Representing the center wavelength of the band to be detected.
In some embodiments, the first film layer and the additional layer are formed using the same material.
In some embodiments, after forming the infrared absorbing layer, the method further comprises:
forming a total reflection electrode layer on one side of the infrared absorption layer, which is far away from the Bragg reflector; the total reflection electrode layer is used for reflecting light rays passing through the infrared absorption layer.
In some embodiments, after forming the bragg mirror and before forming the infrared absorption layer, the method further comprises: forming an optical isolation layer on one side of the Bragg reflector, which is away from the substrate;
alternatively, the first and second electrodes may be,
after the infrared absorption layer is formed and before the total reflection electrode layer is formed, the method further includes: and forming an optical isolation layer on one side of the infrared absorption layer, which is far away from the Bragg reflector.
In some embodiments, the thicknesses of the optical isolation layer and the infrared absorption layer satisfy:
nGtG+nAtA＝m×λ0；
wherein n isGRepresents the thickness of the optical isolation layer, tGRepresenting the refractive index of the optical barrier layer, nARepresents the thickness of the infrared absorbing layer, tARefractive index, λ, of the infrared absorbing layer0Representing the center wavelength of the band to be detected.
In some embodiments, after forming the optical isolation layer on the side of the bragg mirror facing away from the substrate, before forming the infrared absorption layer, the method further comprises:
forming two opposite strip-shaped electrodes at two opposite edge positions of the optical isolation layer on one side of the optical isolation layer, which is far away from the Bragg reflector; the thickness of the strip-shaped electrode is equal to or less than that of the infrared absorption layer;
after forming the infrared absorbing layer, the method further comprises:
and forming an electrical isolation layer on one side of the infrared absorption layer, which is far away from the optical isolation layer, wherein the electrical isolation layer is used for electrically isolating the strip-shaped electrode from the total reflection electrode layer.
The disclosure also provides an infrared photosensitive element, which is prepared by any one of the methods.
The present disclosure also provides an infrared spectrometer comprising at least one infrared sensing element as described above.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
the embodiment of the disclosure provides a preparation method of an infrared photosensitive element, the infrared photosensitive element and an infrared spectrometer, wherein the method comprises the following steps: providing a substrate; forming an optical resonant cavity including a bragg mirror at one side of a substrate; wherein, the Bragg reflector is formed by stacking film layers; an infrared absorbing layer is formed in the optical resonator on the side of the bragg mirror facing away from the substrate. Therefore, the optical resonant cavity with the Bragg reflector and the infrared absorption layer are integrally manufactured by using a solution and an evaporation method, the preparation process is simple, and the yield is high; meanwhile, in the infrared photosensitive element prepared by the method, on one hand, the light path structure of the light splitting system is simplified, and the occupied space is reduced; on the other hand, the manufacturing process is simplified, and the cost is reduced; meanwhile, the Bragg reflector has specific frequency selectivity, so that infrared light in a wave band to be detected penetrates through the Bragg reflector and is absorbed by the infrared absorption layer. The infrared photosensitive element prepared by the method is applied to the spectrometer, so that the spectrometer has the characteristics of miniaturization, compact structure, low power consumption and portability, and can measure infrared light of a single waveband accurately and quickly.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
FIG. 1 is a schematic diagram of the working principle of a CCD polychromator in the related art;
fig. 2 is a schematic flow chart of a method for manufacturing an infrared photosensitive element according to an embodiment of the disclosure;
fig. 3 is a schematic flow chart of another method for manufacturing an infrared photosensitive element according to an embodiment of the disclosure;
fig. 4 is a schematic flow chart of a method for manufacturing an infrared photosensitive element according to an embodiment of the present disclosure;
fig. 5 is a schematic flow chart of a method for manufacturing an infrared photosensitive element according to an embodiment of the present disclosure;
fig. 6 is a schematic flow chart illustrating a method for manufacturing an infrared sensor according to an embodiment of the present disclosure;
fig. 7 is a schematic flow chart illustrating a method for manufacturing an infrared sensor according to an embodiment of the disclosure;
fig. 8 is a schematic structural diagram of an infrared sensor according to an embodiment of the disclosure;
fig. 9 is a schematic structural view of another infrared sensor provided in the embodiment of the present disclosure;
fig. 10 is a schematic structural view of another infrared sensor provided in the embodiment of the present disclosure;
fig. 11 is a schematic structural diagram of another infrared sensor provided in the embodiment of the present disclosure;
fig. 12 is a schematic view illustrating an operating principle of an infrared sensor according to an embodiment of the disclosure;
fig. 13 is a schematic structural diagram of a portable quantum dot infrared spectrometer provided in an embodiment of the present disclosure;
fig. 14 is a schematic structural diagram of a wearable device provided in an embodiment of the present disclosure;
fig. 15 is a schematic structural diagram of another wearable device provided in the embodiments of the present disclosure.
Wherein, 1, a substrate; 2. an optical resonant cavity; 3. an infrared absorbing layer; 21. bragg mirrors, 22 optical isolation layers; 23. a strip electrode; 24. an electrical isolation layer; 25 a total reflection electrode layer; 211. a first film layer; 212. a second film layer; 213 an additional layer; 10. an infrared light sensing element; 20. an infrared spectrometer housing; 30. a base; 40. an optical lens; 50. an external light source; 100. portable quantum dot infrared spectrometer.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.
In the related art, the spectrometer basically comprises a light splitting system, a receiving system and a data processing system, and as shown in fig. 1, the spectrometer is a schematic diagram of the working principle of a CCD polychromator. Referring to fig. 1, an optical fiber is used as a light source, a grating, a collimating lens and a focusing lens form a light splitting system, a CCD detector is used as a receiving system, and a data acquisition device and a PC end form a data processing system; the light waves emitted by the optical fibers can be received by the CCD detector after being reflected for many times by the collimating lens, the grating and the focusing lens, and the optical path is long in optical path and complex in structure, so that the spectrometer has the characteristics of large size, complex structure, large power consumption and difficulty in portability.
Aiming at least one of the defects, the preparation method of the infrared photosensitive element, the infrared photosensitive element and the infrared spectrometer provided by the embodiment of the disclosure are improved, and the method comprises the following steps: providing a substrate; forming an optical resonant cavity including a bragg mirror at one side of a substrate; wherein, the Bragg reflector is formed by stacking film layers; an infrared absorbing layer is formed in the optical resonator on the side of the bragg mirror facing away from the substrate. Therefore, the optical resonant cavity with the Bragg reflector and the infrared absorption layer are integrally manufactured by using a solution and an evaporation method, so that on one hand, the optical path structure of the light splitting system is simplified, and the occupied space is reduced; on the other hand, the manufacturing process is simplified, and the cost is reduced; meanwhile, the Bragg reflector has specific frequency selectivity, so that infrared light in a wave band to be detected penetrates through the Bragg reflector and is absorbed by the infrared absorption layer. The infrared photosensitive element prepared by the method is applied to the spectrometer, so that the spectrometer has the characteristics of miniaturization, compact structure, low power consumption and portability, and can measure infrared light of a single waveband accurately and quickly.
The following describes, with reference to fig. 2 to fig. 15, a method for manufacturing an infrared photosensitive element, and an infrared spectrometer provided in the embodiment of the present disclosure.
In some embodiments, as shown in fig. 2, a schematic flow chart of a method for manufacturing an infrared photosensitive element according to an embodiment of the present disclosure is provided. Referring to fig. 2, the method includes:
and S110, providing a substrate.
The substrate is made of a material with high transmittance and low absorptivity for infrared light in a to-be-detected waveband range, and the specific waveband range can be determined according to the central wavelength of a detection waveband; the substrate is preferably sapphire, but other materials known to those skilled in the art may be selected, and are not limited thereto.
S120, forming an optical resonant cavity comprising a Bragg reflector on one side of the substrate; the Bragg reflector is formed by stacking film layers.
The Bragg reflector capable of transmitting infrared light of a to-be-detected waveband is constructed by alternately laminating two materials which are alternately grown on a substrate in modes of evaporation plating, molecular epitaxial growth and the like and have different refractive indexes and are respectively made into smooth film layers with different thicknesses.
The two materials for constructing the Bragg reflector have the characteristics of low absorption rate and high transmittance for infrared light of a to-be-detected waveband, and meanwhile, the refractive indexes of the two materials for constructing the Bragg reflector for infrared light of the to-be-detected waveband are higher in difference, and the absolute difference is 1-1.4 or the relative difference is 1 time. The two materials can be selected from silicon, germanium, silicon dioxide, silicon nitride, titanium oxide, indium tin oxide and the like. The high refractive index layer is preferably titanium pentoxide, and high refractive index silicon and CaF2、MgF2Or other high refractive index film layer materials. The low refractive index layer is preferably silica, ZnSe or other low refractive index film layer material.
The material requirement of the optical resonant cavity is similar to that of a Bragg reflector, and the optical resonant cavity requires high transmittance and low absorptivity of infrared light of a wavelength band to be detected and has a certain refractive index for the infrared light.
In other embodiments, the two materials for constructing the bragg mirror may be selected from other materials known to those skilled in the art, and are not limited herein.
And S130, forming an infrared absorption layer on the side, facing away from the substrate, of the Bragg reflector and in the optical resonant cavity.
And forming an infrared absorption layer on one side of the Bragg reflector, which is away from the substrate, by adopting a mask spraying, dripping or spin coating mode. The infrared absorption layer is an infrared quantum dot layer and is arranged according to the corresponding wave band range of the infrared light transmitted by the Bragg reflector; the quantum dot material can be selected from perovskite, ZnSe, ZnS, HgTe, PbS, ZnSe/ZnS, ZnSe/ZnO, CdSe, CdTe, CdSe/CdS, InP/ZnS, InP/ZnSe/ZnS, InP/InAs, PbS, PbSe, PbTe, CuInS2、CuInSe2Etc.; the thickness of the infrared absorption layer is 100-1000 nm.
Compared with other synthesis methods of infrared narrow-band semiconductor materials, the method for synthesizing the infrared quantum dots by adopting the full liquid phase method has the advantages of high success rate, large output and low cost, and can be used for solving the problem of high difficulty in manufacturing the infrared materials.
The preparation method of the infrared photosensitive element provided by the embodiment of the disclosure comprises the steps of providing a substrate; forming an optical resonant cavity including a bragg mirror at one side of a substrate; wherein, the Bragg reflector is formed by stacking film layers; an infrared absorbing layer is formed in the optical resonator on the side of the bragg mirror facing away from the substrate. Therefore, the optical resonant cavity with the Bragg reflector and the infrared absorption layer are integrally manufactured by using a solution and an evaporation method, so that on one hand, the optical path structure of the light splitting system is simplified, and the occupied space is reduced; on the other hand, the manufacturing process is simplified, and the cost is reduced; meanwhile, the Bragg reflector has specific frequency selectivity, so that infrared light in a wave band to be detected penetrates through the Bragg reflector and is absorbed by the infrared absorption layer. The infrared photosensitive element prepared by the method is applied to the spectrometer, so that the spectrometer has the characteristics of miniaturization, compact structure, low power consumption and portability, and can measure infrared light of a single waveband accurately and quickly.
In some embodiments, as shown in fig. 3, a schematic flow chart of another method for manufacturing an infrared photosensitive element according to an embodiment of the present disclosure is provided. On the basis of fig. 2, referring to fig. 3, forming a bragg mirror on one side of a substrate in S120 may specifically include:
s121, forming a laminated N-layer composite film layer on one side of the substrate; wherein N is more than or equal to 1 and less than or equal to 4, and N is an integer.
Wherein, forming each layer of composite film layer comprises: forming a first film layer; forming a second film layer on one side of the first film layer, which is far away from the substrate; the number of the laminated layers is 1-4, and the laminated layers can be adjusted according to the center frequency of the to-be-detected waveband.
The refractive index of the first film layer is larger than that of the second film layer, and the absolute difference value of the refractive indexes of the first film layer and the second film layer is 1-1.4 or the relative difference value is 1 time; the first film layer is preferably titanium pentoxide, and high-refractive-index silicon or CaF2、MgF2And the like. The second film layer is preferably silica, or ZnSe.
And S122, forming an additional layer on the side of the composite film layer, which is far away from the substrate.
Wherein the refractive index of the additional layer is greater than the refractive index of the second film layer; the material of the additional layer may be the same as or different from the material of the first film layer, and is not limited herein.
In the preparation method of the infrared photosensitive element provided by the embodiment of the disclosure, the film layer structure of the bragg reflector is formed by alternately arranging the first film layer with high refractive index and the second film layer with low refractive index, and the additional layer with high refractive index is formed on the last second film layer with low refractive index. Therefore, the formed Bragg reflector structure is formed by periodic film layers with high refractive index and low refractive index which are alternated, partial reflection of light waves can be caused by the boundary of each film layer, and infrared light of a to-be-detected waveband is reflected for multiple times in the Bragg reflector structure, so that more infrared light of the to-be-detected waveband penetrates through the Bragg reflector, and more infrared light of the to-be-detected waveband is absorbed by the infrared absorption layer.
In some embodiments, the thickness of the first film layer, the thickness of the second film layer, and the thickness of the additional layer satisfy: n isHtH＝nLtL＝nFtF＝λ0(ii)/4; wherein n isHRepresents the thickness of the first film layer, tHRepresenting the refractive index of the first film layer, nLRepresents the thickness of the second film layer, tLRepresenting the refractive index of the second film layer, nFRepresents the thickness of the additional layer, tFRepresenting the refractive index, λ, of the additional layer0Representing the center wavelength of the band to be detected.
Thus, the thickness of the first film layer, the thickness of the second film layer and the thickness of the additional layer of the Bragg reflector satisfy nHtH＝nLtL＝nFtF＝λ0And 4, the optical path difference of the reflected light at the interface of the adjacent film layers is half wavelength, the sign of the reflection coefficient at the interface is also changed, so all the reflected light at the interface generates destructive interference, and strong reflected light is obtained.
In some embodiments, the first film layer and the additional layer are formed using the same material.
The additional layer and the first film layer are made of the same material and both have high refractive indexes. The Bragg reflector structure formed in the way is regularly changed and is alternately and periodically arranged by film layers with high refractive index and low refractive index.
In some embodiments, as shown in fig. 4, a schematic flow chart of a method for manufacturing an infrared photosensitive element according to an embodiment of the present disclosure is provided. On the basis of fig. 2, referring to fig. 4, after the forming of the infrared absorption layer in S130, the method may further include:
s140, forming a total reflection electrode layer on one side of the infrared absorption layer, which is far away from the Bragg reflector; the total reflection electrode layer is used for reflecting light rays passing through the infrared absorption layer.
Wherein, the full-emission electrode layer has high reflectivity to infrared light; the full-emission electrode layer can be a metal layer, preferably gold, and the thickness of the film layer is 100-1000 nm.
So, full transmitting electrode layer will pass through infrared absorbing layer and unabsorbed infrared light reflects back infrared absorbing layer, takes place constructive interference at the infrared light of two opposite directions on infrared absorbing layer, has strengthened the intensity of infrared light, and then the absorption rate of reinforcing infrared absorbing layer to infrared light.
In some embodiments, after forming the bragg mirror and before forming the infrared absorbing layer, the method may further include forming an optical isolation layer on a side of the bragg mirror facing away from the substrate.
Exemplarily, as shown in fig. 5, a schematic flow chart of a method for manufacturing an infrared photosensitive element according to an embodiment of the present disclosure is provided. Referring to fig. 5, the method may include:
s210, providing a substrate.
S220, forming an optical resonant cavity comprising a Bragg reflector on one side of the substrate; the Bragg reflector is formed by stacking film layers.
And S230, forming an optical isolation layer on one side of the Bragg reflector, which is far away from the substrate.
The optical isolation layer is used for adjusting the optical path of infrared light between the Bragg reflector, the optical isolation layer, the infrared absorption layer and the total reflection electrode layer, so that the infrared light can start to vibrate and interfere with and enhance, and the absorption rate of the infrared absorption layer is increased; the thickness of the optical isolation layer is determined by the central wavelength of the wave band to be detected and the thickness of the infrared absorption layer.
The optical isolation layer is made of a material with low refractive index, extremely low absorption rate or no absorption to infrared light, and preferably silicon dioxide; the film is manufactured by using the modes of mask evaporation, molecular epitaxial growth and the like.
And S240, forming an infrared absorption layer on the side, away from the substrate, of the optical isolation layer and in the optical resonant cavity.
And S250, forming a total reflection electrode layer on one side of the infrared absorption layer, which is far away from the Bragg reflector.
Thus, an infrared sensitive element is formed.
In some embodiments, after forming the infrared absorption layer and before forming the total reflection electrode layer, the method may further include: an optical isolation layer is formed on a side of the infrared absorption layer facing away from the bragg mirror.
Exemplarily, as shown in fig. 6, a schematic flow chart of a method for manufacturing an infrared photosensitive element according to an embodiment of the present disclosure is provided. Referring to fig. 6, the method may include:
s310, providing a substrate.
S320, forming an optical resonant cavity comprising a Bragg reflector on one side of the substrate; the Bragg reflector is formed by stacking film layers.
And S330, forming an infrared absorption layer on the side, facing away from the substrate, of the Bragg reflector and in the optical resonant cavity.
And S340, forming an optical isolation layer on one side of the infrared absorption layer, which is far away from the Bragg reflector.
The optical isolation layer is used for adjusting the optical path of infrared light between the Bragg reflector, the infrared absorption layer, the optical isolation layer and the total reflection electrode layer, so that the infrared light can start to vibrate and interfere with and enhance, and the absorption rate of the infrared absorption layer is increased; the thickness of the infrared absorption film is determined by the central wavelength of the waveband to be detected and the thickness of the infrared absorption layer.
The optical isolation layer is made of a material with low refractive index, extremely low absorption rate or no absorption to infrared light, and preferably silicon dioxide; the film is manufactured by using the modes of mask evaporation, molecular epitaxial growth and the like.
And S350, forming a total reflection electrode layer on one side of the optical isolation layer, which is far away from the Bragg reflector.
Thus, an infrared sensitive element is formed.
In some embodiments, the thicknesses of the optical isolation layer and the infrared absorption layer satisfy:
nGtG+nAtA＝m×λ0。
wherein n isGRepresents the thickness of the optical isolation layer, tGRepresenting the refractive index of the optical barrier layer, nARepresents the thickness of the infrared absorbing layer, tARefractive index, λ, of the infrared absorbing layer0Representing the center wavelength of the band to be detected.
Wherein m is a positive integer and represents the optical path sum of infrared light in the optical isolation layer and the infrared absorption layer to be integral multiple of the central wavelength of the waveband to be detected.
In some embodiments, after forming the optical isolation layer on the side of the bragg mirror facing away from the substrate, the method may further include, before forming the infrared absorption layer: forming two opposite strip electrodes at two opposite edge positions of the optical isolation layer on one side of the optical isolation layer, which is far away from the Bragg reflector; the thickness of the strip-shaped electrode is equal to or less than that of the infrared absorption layer; and further, after forming the infrared absorption layer, the method may further include: and forming an electrical isolation layer on one side of the infrared absorption layer, which is far away from the optical isolation layer, wherein the electrical isolation layer is used for electrically isolating the strip-shaped electrode from the total reflection electrode layer.
Exemplarily, as shown in fig. 7, a schematic flow chart of a method for manufacturing an infrared photosensitive element according to an embodiment of the present disclosure is provided. Referring to fig. 7, the method may include:
s410, providing a substrate.
S420, forming an optical resonant cavity comprising a Bragg reflector on one side of the substrate; the Bragg reflector is formed by stacking film layers.
And S430, forming an optical isolation layer on one side of the Bragg reflector, which faces away from the substrate.
S440, forming two opposite strip electrodes at two opposite edge positions of the optical isolation layer on one side of the optical isolation layer, which is far away from the Bragg reflector; the thickness of the strip-shaped electrode is equal to or less than that of the infrared absorption layer.
The strip-shaped electrodes may be made of a metal material having high conductivity and high stability, such as aluminum, silver, gold, or copper, and silver is preferable.
Illustratively, the strip-shaped electrode can be manufactured by using a mask evaporation method, a magnetron sputtering method and the like, and the thickness is 100 nm-1000 nm.
And S450, forming an infrared absorption layer on one side of the optical isolation layer, which faces away from the Bragg reflector, in the optical resonant cavity.
And S460, forming an electrical isolation layer on one side of the infrared absorption layer, which is far away from the optical isolation layer.
The electrical isolation layer is used for achieving electrical isolation between the total reflection electrode layer and the strip electrodes and preventing the total reflection electrode layer and the strip electrodes from being short-circuited.
Illustratively, the electrically isolating layer may be fabricated using spin-on or molecular epitaxial growth methods; preferably, epoxy resin (PMMA) is selected, and the thickness of the film layer is as thin as possible so as to completely electrically isolate the strip-shaped electrode from the total reflection electrode layer.
Meanwhile, the electric isolation layer has extremely low absorption rate or no absorption to infrared light.
And S470, forming a total reflection electrode layer on one side of the electrical isolation layer, which is far away from the Bragg reflector.
Thus, an optical photosensitive element was formed.
On the basis of the foregoing embodiment, an embodiment of the present disclosure further provides an infrared photosensitive element, which can be prepared by any one of the preparation methods provided in the foregoing embodiments, and has corresponding beneficial effects, and the same portions can be understood with reference to the foregoing understanding, and are not described herein again.
The following describes an exemplary infrared photosensitive element provided in an embodiment of the present disclosure with reference to fig. 8 to 12.
Exemplarily, as shown in fig. 8, a schematic structural diagram of an infrared photosensitive element provided in an embodiment of the present disclosure is shown. Referring to fig. 8, the infrared sensitive element includes a substrate 1, an optical resonator 2, and an infrared absorption layer 3; the optical resonant cavity 2 is arranged on one side of the substrate 1, and the optical resonant cavity 2 comprises a Bragg reflector 21 formed by stacking film layers; the infrared absorption layer 3 is disposed within the optical resonator 2.
Exemplarily, as shown in fig. 9 or fig. 10, a schematic structural diagram of another infrared photosensitive element provided in the embodiment of the present disclosure is shown. Referring to fig. 9 or fig. 10, in the infrared photosensitive element, each film layer includes, from bottom to top, a substrate 1, a bragg reflector 21, an optical isolation layer 22, a strip electrode 23, an infrared absorption layer 3, an electrical isolation layer 24, and a total reflection electrode layer 25, where the optical isolation layer 22 is disposed between the bragg reflector 21 and the infrared absorption layer 3; the bragg reflector 21 is composed of 3 layers of composite film layers and 1 layer of additional layers 213, each layer of composite film layer is composed of a first film layer 211 and a second film layer 212, and the first film layer 211 is located on one side, facing the substrate 1, of the second film layer 212; two strip electrodes 23 are disposed at opposite edge positions of the infrared absorption layer, and are in electrical contact with the infrared absorption layer 3.
Exemplarily, as shown in fig. 11, a schematic structural diagram of another infrared photosensitive element provided in the embodiment of the present disclosure is shown. Referring to fig. 11, a substrate 1, a bragg reflector 21, a strip electrode 23, an infrared absorption layer 3, an optical isolation layer 22, and a total reflection electrode layer 25 are arranged in sequence from bottom to top, and the infrared absorption layer 3 is arranged between the optical isolation layer 22 and the bragg reflector 21; the bragg reflector 21 is composed of 3 layers of composite film layers and 1 layer of additional layers 213, each layer of composite film layer is composed of a first film layer 211 and a second film layer 212, and the first film layer 211 is located on one side, facing the substrate 1, of the second film layer 212; two strip electrodes 23 are disposed at opposite edge positions of the infrared absorption layer, and are in electrical contact with the infrared absorption layer 3.
It is understood that fig. 9-11 only exemplarily illustrate that the bragg mirror 21 includes 3 composite film layers, but do not constitute a limitation of the infrared photosensitive element provided by the embodiment of the present disclosure. In other embodiments, the bragg reflector 21 may further include 1, 2, 4 or more composite film layers, which is not limited herein.
Exemplarily, as shown in fig. 12, a schematic view of an operating principle of an infrared photosensitive element provided in an embodiment of the present disclosure is shown. Referring to fig. 12, an external light source provides illumination, and projects infrared light to a detected object, the infrared light reflected by the detected object passes through a substrate and then a bragg reflector in an optical resonant cavity, and the infrared light with a specific central frequency passes through the bragg reflector and generates constructive interference behind the bragg reflector, so that the intensity of the central frequency wavelength of the infrared light is enhanced, and the spectrum of the incident infrared light is narrowed; the infrared light with narrowed spectral width penetrates through the optical isolation layer, is absorbed by the infrared absorption layer, is partially reflected on the total reflection electrode layer, returns to the infrared absorption layer area, and is subjected to constructive interference at the infrared light in two opposite directions of the infrared absorption layer, so that the intensity of the infrared light is enhanced, the spectral width is further narrowed, and the absorption rate of the infrared absorption layer is further enhanced.
In some embodiments, as shown in fig. 13, a schematic structural diagram of an infrared spectrometer provided for embodiments of the present disclosure is shown. Referring to fig. 13, the infrared spectrometer includes at least one infrared sensing element as described above.
Exemplarily, as shown in fig. 13, 4 infrared photosensitive elements 10 with different wavebands are spliced and combined, and are sequentially installed in the infrared spectrometer housing 20 according to the infrared photosensitive elements 10, the base 30, and the optical lens 40; thus, the infrared spectrometer can detect 4 different infrared bands simultaneously.
It can be understood that fig. 13 is only exemplary to illustrate the splicing combination of 4 infrared sensitive elements, but does not constitute a limitation of the infrared spectrometer provided by the embodiment of the present disclosure. In other embodiments, the number of the infrared photosensitive elements to be spliced and combined can be set according to the requirement of the multiband infrared spectrometer, and is not limited herein.
Illustratively, as shown in fig. 14 or fig. 15, the portable quantum dot infrared spectrometer 100 is embedded in the edge of a watch dial (i.e., a structural form of the wearable device), and an external light source 50 is provided on the dial to provide illumination for the portable quantum dot infrared spectrometer 100.
It should be noted that the portable quantum dot infrared spectrometer may also be applied to other wearable devices known by those skilled in the art, such as smart band, glasses, headwear, jewelry, and clothing, or to other terminal devices with a detection function, which is not limited herein.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present disclosure, which enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A preparation method of an infrared photosensitive element is characterized by comprising the following steps:
providing a substrate;
forming an optical resonant cavity including a bragg mirror at one side of the substrate; wherein the Bragg reflector is formed by stacking film layers;
and forming an infrared absorption layer on one side of the Bragg reflector, which is away from the substrate, and in the optical resonant cavity.
2. The method of claim 1, wherein forming the bragg mirror on one side of the substrate comprises:
forming a laminated N-layer composite film layer on one side of the substrate; wherein N is more than or equal to 1 and less than or equal to 4, and N is an integer;
forming an additional layer on the side of the composite film layer away from the substrate;
wherein forming each of the composite film layers comprises:
forming a first film layer;
forming a second film layer on one side of the first film layer, which is far away from the substrate;
wherein the first film layer has a refractive index greater than the second film layer, and the additional layer has a refractive index greater than the second film layer.
3. The spectrometer of claim 2, wherein the thickness of the first film layer, the thickness of the second film layer, and the thickness of the additional layer are such that:
nHtH＝nLtL＝nFtF＝λ0/4；
wherein n isHRepresents the thickness of the first film layer, tHRepresenting the refractive index of the first film layer, nLRepresents the thickness of the second film layer, tLRepresenting the refractive index of the second film layer, nFRepresents the thickness of the additional layer, tFRepresenting the refractive index, λ, of the additional layer0Representing the center wavelength of the band to be detected.
4. The method of claim 2, wherein the first film layer and the additional layer are formed using the same material.
5. The method of any of claims 1-3, wherein after forming the infrared absorbing layer, the method further comprises:
forming a total reflection electrode layer on one side of the infrared absorption layer, which is far away from the Bragg reflector; the total reflection electrode layer is used for reflecting light rays passing through the infrared absorption layer.
6. The method of claim 5, wherein after forming the Bragg mirror and before forming the infrared absorbing layer, the method further comprises: forming an optical isolation layer on one side of the Bragg reflector, which is away from the substrate;
alternatively, the first and second electrodes may be,
after the infrared absorption layer is formed and before the total reflection electrode layer is formed, the method further includes: and forming an optical isolation layer on one side of the infrared absorption layer, which is far away from the Bragg reflector.
7. The method of claim 6, wherein the optical isolation layer and the infrared absorbing layer have thicknesses that satisfy:
nGtG+nAtA＝m×λ0；
wherein n isGRepresents the thickness of the optical isolation layer, tGRepresenting the refractive index of the optical barrier layer, nARepresents the thickness of the infrared absorbing layer, tARefractive index, λ, of the infrared absorbing layer0Representing the center wavelength of the band to be detected.
8. The method of claim 6, wherein after forming an optical isolation layer on a side of the bragg mirror facing away from the substrate, prior to forming the infrared absorbing layer, the method further comprises:
forming two opposite strip-shaped electrodes at two opposite edge positions of the optical isolation layer on one side of the optical isolation layer, which is far away from the Bragg reflector; the thickness of the strip-shaped electrode is equal to or less than that of the infrared absorption layer;
after forming the infrared absorbing layer, the method further comprises:
and forming an electrical isolation layer on one side of the infrared absorption layer, which is far away from the optical isolation layer, wherein the electrical isolation layer is used for electrically isolating the strip-shaped electrode from the total reflection electrode layer.
9. An infrared photosensitive element, characterized by being produced by the production method according to any one of claims 1 to 8.
10. An infrared spectrometer comprising at least one infrared sensitive element of claim 9.
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