KR101882141B1 - Spectromtric sensor and method for manufacturing the same and spectromtric device - Google Patents

Abstract

The present invention provides a spectrometric sensor which forms a plurality of light transmitting layers having different transmission spectra on a light sensing part as a base material and restores a light spectrum signal of light passing through the light transmitting layer, a manufacturing method thereof and a spectrometric device using the same. To this end, the spectrometric sensor comprises: the light sensing part absorbing the incident light, and generating current; and a light transmitting part integrally forming detection regions of a multi-layer thin film structure having different light transmission spectra on the light sensing part in a matrix array. Therefore, the present invention forms the plurality of light transmitting layers having different transmission spectra on the light sensing part as the base material, thereby significantly increasing the number of individual regions composing a two-dimensional array in comparison with a conventional technique composed as a metallic pattern.

Description

TECHNICAL FIELD [0001] The present invention relates to a spectroscopic sensor, a method of manufacturing the same, and a spectroscope using the same. [0002] SPECTROMTRIC SENSOR AND METHOD FOR MANUFACTURING THE SAME AND SPECTROMTRIC DEVICE [

The present invention relates to a spectroscopic sensor, a method of manufacturing the same, and a spectroscopic apparatus using the same. More specifically, the present invention relates to a spectroscopic sensor and a spectroscope using the same, And a spectroscopic device using the spectroscopic sensor.

The spectroscope is used as a core instrument in various industrial fields such as optical, chemical, and marine engineering. It measures the intensity of the spectrum transmitted or reflected by the sample and displays the information in a graph or spectrum form.

The degree to which such spectroscopic apparatus accurately and finely represents the information of an object is referred to as resolution, and the resolution is evaluated as an important factor for evaluating the performance of the spectroscope.

Among the spectroscopic devices, a miniature spectroscopic device is miniaturized by using a filter device, such as a prism or a diffraction grating which occupies a large volume of space in a conventional spectrometer, and can be conveniently used for portable purposes. It can be concentrated in one place.

The filter device technology using nano process can make the size of spectroscopic device very small, and thus mass production can greatly reduce production cost. The small spectroscopic device produced by this process can measure the characteristics of material This is a great help.

In addition, the present invention can be easily combined with a computer or other electronic device and used together. In addition, a spectroscope based on a filter device has an advantage that spectral information of a light source can be measured in a short time.

2 is a cross-sectional view illustrating a structure of a spectroscopic sensor according to the related art. The spectroscopic sensor 10 includes an optical filter unit 11 and a photosensor unit (not shown) And the optical spectrum incident on the spectroscopic sensor 10 is incident on the optical filter unit 11 and reaches the optical sensor unit 12 corresponding to the optical filter unit 11, .

The spectroscopic sensor 10 will be described in more detail. The optical sensor unit 12 is a PN-junction semiconductor, one side is composed of an N-type semiconductor 12a and the other side is composed of a P-type semiconductor 12b When light is incident on the photosensor unit 12, an electron-hole pair is generated by the incident light inside the PN-junction semiconductor, and the upper electrode (not shown) connected to the PN-junction semiconductor through the generated electron- A current is generated in the lower electrode 12c and the lower electrode 12d and a voltage is generated via the load resistor 20. [

In the meantime, a band-pass filter for passing only light of a specific wavelength is proposed in the optical filter unit 11, and a general band-pass filter is manufactured by forming a metal film or an oxide film on a glass substrate. In such a band- It is difficult to narrow the wavelength band, and it is difficult to increase the kind of the measurement wavelength and the accuracy of the spectrum analysis can not be improved.

In addition, Korean Patent Laid-Open Publication No. 10-2012-0088654 (entitled: optical unit) includes a filter member for splitting light to be transmitted and a photodetector having a plurality of light receiving elements, And a second metal material having a refractive index higher than that of the first metal material, the first metal material having a plurality of convex portions and a second metal material having a refractive index higher than that of the first metal material, An optical unit having a metal film formed so as to cover the substrate.

However, in the optical unit according to the related art, there is a problem that a signal restoration error occurs due to expansion and shrinkage in a high temperature or low temperature environment using a nano-patterned metal of the filter member.

In addition, there is a problem that an alignment error occurs in the process of coupling the filter member to the photodetector, and such alignment error has a problem that the signal of the photodetector is reduced.

In addition, an imprinting method for forming a nano pattern has a problem that it is difficult to manufacture an imprint pattern.

Korean Patent Laid-Open Publication No. 10-2012-0088654 (entitled: Optical Unit)

In order to solve such problems, the present invention provides a spectral sensor for forming a plurality of light transmission layers having different spectral transmittances on a base material and restoring an optical spectrum signal of light passing through the light transmission layer, And a spectroscopic apparatus using the same.

According to an aspect of the present invention, there is provided a light emitting device comprising: a light sensing part for absorbing incident light to generate a current; And a light transmitting portion in which detection regions of a multilayer thin film structure having mutually different light transmission spectrums are integrally formed on the light sensing portion in a matrix arrangement.

In addition, the spectroscopic sensor according to the present invention may further include a first electrode and a second electrode for detecting a current generated in the light sensing unit.

The light sensing unit may include a first semiconductor layer doped with impurities; And a second semiconductor layer formed by bonding a second semiconductor layer doped with an impurity different from the impurity of the first semiconductor layer.

Further, the detection region of the light transmitting portion according to the present invention has a different transmission area.

The detection area according to the present invention is characterized in that light transmitting parts having different shapes are laminated.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device, comprising: forming a light sensing part for absorbing incident light to generate a current; Dividing the light sensing portion into a detection region of a matrix array, and forming a first mask layer in an arbitrary pattern on the light sensing portion; Depositing and etching the light sensing portion to form a primary light transmitting portion; Forming a second mask layer in an arbitrary pattern on the formed primary light transmission portion; Depositing and etching the primary light transmissive portion to form a secondary light transmissive portion; And forming a first electrode and a second electrode for detecting a current generated in the light sensing unit.

The present invention further includes a step of forming a third mask layer in an arbitrary pattern on the secondary light transmitting portion and forming a tertiary light transmitting portion by vapor deposition and etching of the secondary light transmitting portion do.

In addition, the first to third mask layers according to the present invention are characterized in that the patterns are formed to have different areas.

The present invention also provides a spectroscopic sensor comprising: a spectroscopic sensor in which detection regions of a multilayer thin film structure having a light transmission spectrum different from each other with respect to incident light are arranged in a matrix structure; And a signal processor for processing the output signal of the spectroscopic sensor to recover the transmission spectral information of the incident light.

The spectroscopic apparatus according to the present invention may further include a spectroscopic signal output unit for converting transmission spectral information of the incident light reconstructed by the signal processing unit into an arbitrary format and outputting the signal.

The present invention can greatly increase the number of individual regions constituting a two-dimensional array in comparison with a technique of constituting a conventional metallic pattern by forming a plurality of light transmission layers having different spectral transmittances on the substrate as a light sensing portion There are advantages.

In addition, the present invention is advantageous in that the manufacturing process can be made shorter than the method of separately fabricating and bonding the light-transmitting layer by constructing the light-transmitting layer with the light sensing portion as a base.

In addition, the present invention has an advantage of improving the signal restoration rate by preventing the occurrence of misalignment in the process of combining the light sensing part and the light transmitting layer.

1 is an exploded perspective view showing a configuration of a conventional spectral sensor.
2 is a sectional view showing the structure of a conventional spectroscopic sensor.
3 is a perspective view of a spectroscopic sensor according to the present invention.
4 is a sectional view showing a structure of a spectroscopic sensor according to the present invention.
5 is a view illustrating a manufacturing process of a spectroscopic sensor according to the present invention.
6 is a view illustrating another example of a manufacturing process of a spectroscopic sensor according to the present invention.
7 is a view illustrating another example of a manufacturing process of a spectroscopic sensor according to the present invention.
8 is a view illustrating another example of a manufacturing process of a spectroscopic sensor according to the present invention.
9 is a block diagram showing a spectroscope using a spectroscopic sensor according to the present invention.

Hereinafter, a spectral sensor according to the present invention, a method of manufacturing the same, and a spectroscope using the same will be described in detail with reference to the accompanying drawings.

(Spectral sensor)

FIG. 3 is a perspective view showing a spectroscopic sensor according to the present invention, and FIG. 4 is a sectional view showing the structure of a spectroscopic sensor according to the present invention.

3 and 4, the spectroscopic sensor 100 according to the present invention includes a light sensing part 110, a light transmission part 120, a first electrode 130, a second electrode 140, And a dielectric 150. A plurality of detection regions 101 are arranged in a matrix array and the photosensitive curves of the light incident on the detection region 101 are different from each other.

The light sensing unit 110 includes a first semiconductor layer 111 doped with an impurity and a second semiconductor layer 111 doped with an impurity different from the impurity of the first semiconductor layer 111 And a bonding layer (not shown) may be formed between the first and second semiconductor layers 111 and 112. In addition,

The semiconductor material forming the light sensing part 110 may use a different material depending on the wavelength band of the incident light. When ultraviolet rays, visible light, near-infrared rays, or the like are used as the incident light, crystalline silicon having a band gap of 1.1 [ But is not limited thereto.

In the case of Ge, the band gap is 0.8 占 퐉 to 1.8 占 퐉. In the case of InGaAs, the band gap is 0.7 占 퐉 to 1.7 占 퐉. In the case of InSb, the band gap is 1.0 占 퐉 to 5.5 占 퐉. In the case of HgCdTe, To 16.0 占 퐉, and in the case of InAs, a semiconductor material having a band gap of 1.0 占 퐉 to 3.0 占 퐉 can be used.

Further, a semiconductor material which can operate at a wavelength other than the wavelength range described above can be used.

The first semiconductor layer 111 is an N-type (or P-type) semiconductor layer, the second semiconductor layer 112 is a P-type (or N-type) semiconductor layer, As shown in FIG.

The first and second semiconductor layers 111 and 112 may be formed by depositing a material such as boron (B), which is a P-type doping material corresponding to group III of the periodic table, on an N-type crystalline silicon substrate Spin-coating, and then diffused into the substrate through heat treatment.

In addition, a PN-junction structure may be formed by diffusing an N-type doping material into a P-type doped silicon substrate. In this case, phosphorus (P) ions corresponding to the V- .

In addition, the PN-junction structure is not limited to the one formed through the above-described spin coating and heat treatment, and the PN-junction can be formed by various methods such as an ion diffusion method.

In addition, in addition to the PN-junction, a PIN-junction semiconductor structure may be used. In this case, a PIN-junction structure may be formed using an NI-type or PI-type substrate without using an N-type silicon substrate or a P- .

The light transmitting portion 120 is integrally formed on the light sensing portion 110 with a multi-layer thin film structure detection region 101 having a different light transmission spectrum from each other in an M * N matrix arrangement.

In addition, the light sensing unit 110 may be formed of a single layer made of a photoconductive material that detects light by photoconductivity, and the material of the light sensing unit made of the photoconductive material may include first and second materials, As the material of the second semiconductor layers 111 and 112, any of the above-described semiconductor materials can be used.

The light transmitting portion 120 may be formed by partially removing the second semiconductor layer 112 of the light sensing portion 110.

That is, an electron-beam resist (ER) is coated on the second semiconductor layer 112, a first mask layer is formed using an electron-beam lithography apparatus, and then a developing process The first mask layer is removed through the first mask layer and a metal thin film such as aluminum is deposited on the first mask layer and then the remaining ER portion is removed using a lift-off process, , And a first light transmitting portion protruding by a predetermined length is formed through selective etching.

The etching may be performed by a dry etching method using an apparatus such as ICP-RIE, and a selective etching is performed using an etchant different in chemical reaction between the fine pattern portion covered with aluminum and the remaining portion made of doped crystalline silicon A wet etching method may also be used.

The second mask layer is formed through electron beam etching, the second mask layer is removed through a developing process, the metal thin film is deposited, and the remaining ER portion is removed to form a second So that a light transmitting portion is formed.

That is, the light transmitting portion 120a of the first detection region 101a, the light transmission portion 120b of the second detection region 101b, and the light transmission portion 120c of the third detection region 120c have different shapes, A plurality of thin films are formed in a multilayer so as to have different areas, and the light sensing part 110 and the transmission part 120 are integrally formed without any separate alignment process.

The first through third detection areas 101a, 101b, and 101c may be formed by laminating the light transmission parts 120a, 120b, and 120c having different shapes, thereby differentiating the transmission spectrum by different transmission areas.

That is, if the transmission areas are different for each detection area, a difference in intensity occurs. If the transmission areas are different from each other, the ratio of the transmitted components is differentiated, resulting in a difference between the signals.

The first electrode 130 is electrically connected to the first semiconductor layer 111 and detects a current generated in the light sensing unit 110.

The second electrode 140 is provided to be electrically connected to the second semiconductor layer 112 to detect a current generated in the light sensing part 110 and to transmit incident light to the inside of the light transmitting part 120 And a transparent electrode having transparency.

The second electrode 140 may be a material doped with Group III metal elements on the periodic table such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO) A material doped with a Group III cationic metal element of the Group III element may be used.

When the applied wavelength of the second electrode 140 is in the range of the wavelength of the infrared ray or the like, a transparent conductive film suitable for the wavelength to be used may be used.

The dielectric material 150 may be formed of any material having a certain transparency and a non-conductive property within a wavelength range to be used, It is also possible to use various dielectric materials that are appropriate.

(Manufacturing method)

FIG. 5 is a view illustrating a manufacturing process of the spectroscopic sensor according to the present invention, and FIGS. 6 to 8 are views illustrating another process of manufacturing the spectroscopic sensor according to the present invention.

As shown in FIGS. 5 and 8, the manufacturing process of the spectroscopic sensor according to the present invention forms a light sensing part 110 that absorbs incident light to generate a current.

The light sensing unit 110 is formed by bonding a first semiconductor layer 111 doped with an impurity and a second semiconductor layer 112 doped with an impurity different from that of the first semiconductor layer 111, A plurality of detection regions 101 are arranged in an M * N matrix structure.

The second semiconductor layer 112 of the light sensing part 110 arranged in the M * N matrix structure is partitioned in correspondence with the detection area 101 of the matrix array, and each of the detection areas 101 The first mask layer 160 is formed so that a pattern having an arbitrary pattern, for example, the same shape or a different shape, is formed.

The first mask layer 160 is formed by applying an electron beam resist (ER) on the second semiconductor layer 112 and then forming the first mask layer 160 using an electron beam lithography apparatus. The second detection area mask 160b, and the third detection area mask 160c are formed to have different shapes and sizes so that the first detection area mask 160a, the second detection area mask 160b, and the third detection area mask 160c are different from each other.

After the formation of the first mask layer 160, the first mask layer 160 is removed through a developing process, a metal thin film is deposited, and the remaining ER portions are removed, A first light transmitting portion 120 'including a first transmitting pattern portion 120'a, a second transmitting pattern portion 120'b, and a third transmitting pattern portion 120'c is formed.

In the present embodiment, three transmission pattern portions are compared with each other for convenience of explanation. However, the present invention is not limited to this, and transmission pattern portions having different shapes may be formed for each detection region of the M * N matrix array It will be obvious.

The first transmission pattern part 120'a, the second transmission pattern part 120'b, and the third transmission pattern part 120'c, which are formed of the first transmission pattern part 120'a, the second transmission pattern part 120'b, and the third transmission pattern part 120'c so that various transmission spectra can be formed, A second mask layer 161 having a first transmissive pattern portion 161a, a second transmissive pattern portion 161b and a third transmissive pattern portion 161c is formed on the transmissive portion 120 '.

The second mask layer 161 includes a first transmissive pattern portion 120'a, a second transmissive pattern portion 120'b, and a third transmissive pattern portion 120'c, ', And then the first detection area mask 161a, the second detection area mask 161b and the third detection area mask 161b are formed so that the transmission spectrum is different for each detection area by using the electron beam etching apparatus, 161c are formed in different shapes and sizes, respectively.

After the formation of the second mask layer 161, the second mask layer 161 is removed through a developing process, a metal thin film is deposited, and then the remaining ER portions are removed, A second light transmitting portion 120 "composed of the first transmitting pattern portion 120" a, the second transmitting pattern portion 120 "b, and the third transmitting pattern portion 120"

That is, the shape of the mask is varied to form a light transmitting portion composed of a multi-layered multi-layered structure.

Thereafter, a first electrode 130 is formed by applying a dielectric material 150 so that the formed second light transmitting portion 120 '' maintains a predetermined shape and electrically connected to the first semiconductor layer 111, A second electrode 140 electrically connected to the first electrode 112 may be formed to manufacture a spectroscopic sensor.

On the other hand, in order to detect more various transmission spectra, a light transmitting portion having various shapes can be constructed.

A third mask layer 162 having a first transmission pattern portion 162a, a second transmission pattern portion 162b and a third transmission pattern portion 162c is formed on the formed second light transmission portion 120 " .

The third mask layer 162 includes a second transmissive pattern portion 120 "a, a second transmissive pattern portion 120" b, and a third transmissive pattern portion 120 " 120 "), and then the first detection area mask 162a, the second detection area mask 162b, and the third detection area mask 162b are formed so that the transmission spectrum is different for each detection area by using the electron beam etching apparatus, (162c) are formed in different shapes and sizes, respectively.

After the formation of the third mask layer 162, the third mask layer 162 is removed through a developing process, the metal thin film is deposited, and the remaining ER portions are removed. A third light transmitting portion 120 '' made of a second transmitting pattern portion 120 '' ', a second transmitting pattern portion 120' '', and a third transmitting pattern portion 120 '' c is formed.

Accordingly, it becomes possible to form a plurality of light-transmitting layers having different transmittances on the base and the light-sensing part.

(Spectroscopic device)

FIG. 9 is a block diagram showing a spectroscopic apparatus using a spectroscopic sensor according to the present invention, and a spectroscopic apparatus according to this embodiment will be described with reference to FIGS. 3 and 4. FIG.

First, repetitive descriptions of the same components as those related to the spectroscopic sensor 100 are omitted, and the same reference numerals are used for the same components.

The spectroscopic apparatus according to the present invention includes a spectroscopic sensor 100 in which a detection region 101 of a multilayer thin film structure having a light transmission spectrum different from each other with respect to incident light is arranged in an M × N matrix structure, A spectral signal output unit 300 for converting transmission spectral information of the incident light reconstructed by the signal processing unit 200 into an arbitrary format and outputting the converted spectral information to an arbitrary format, .

The signal processing unit 200 is electrically connected to the first and second electrodes 130 and 140 of the spectroscopic sensor 100 to process the signal output from the spectroscopic sensor 100 so that the spectral information of the incident light is restored And preferably a DSP (Digital Signal Processor) for digital signal processing.

The spectroscopic signal output unit 300 converts the transmission spectral information of the incident light reconstructed by the signal processing unit 200 into a format such as a graph and outputs the converted spectral information to a user so that the spectroscopic signal output unit 300 can analyze the transmission spectrum information. And a PC or an embedded processor.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. It can be understood that

In the course of the description of the embodiments of the present invention, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation, , Which may vary depending on the intentions or customs of the user, the operator, and the interpretation of such terms should be based on the contents throughout this specification.

100: Spectroscopic sensor 101: Detection area
101a: first detection area 101b: second detection area
101c: third detection area 110: light sensing part
111: first semiconductor layer 112: second semiconductor layer
120: light transmitting portion
120 ': primary light transmission portion
120 ": secondary light transmitting portion
120 '': Third light transmission part
120a, 120'a, 120 "a, 120 '" a:
120b, 120'b, 120 "b, 120""" b:
120c, 120'c, 120 "c, 120 '" c:
130: first electrode 140: second electrode
150: dielectric 160: first mask layer
160a: first detection area mask 160b: second detection area mask
160c: third detection area mask 161: second mask layer
161a: first detection area mask 161b: second detection area mask
161c: third detection area mask 162: third mask layer
162a: first detection area mask 162b: second detection area mask
162c: Third detection area mask 200: Signal processing part
300: Spectroscopic signal output section

Claims (10)

A light sensing part 110 for absorbing incident light to generate a current; And
A light transmitting portion 120 having a plurality of detection regions 101 of a multi-layer thin film structure having different transmission areas and different shapes so as to have different light transmission spectra, which are integrally stacked on the light sensing portion 110, / RTI > The method according to claim 1,
Wherein the spectroscopic sensor further comprises a first electrode (130) and a second electrode (140) for detecting a current generated in the light sensing unit (110). 3. The method of claim 2,
The light sensing unit 110 includes a first semiconductor layer 111 doped with impurities; And
And a second semiconductor layer (112) bonded to the second semiconductor layer (112) doped with an impurity different from the impurity of the first semiconductor layer (111). delete delete a) forming a light sensing part (110) for absorbing incident light to generate a current;
b) dividing the light sensing unit 110 into a matrix of detection regions 101 and forming a first mask layer 160 on the light sensing unit 110 in an arbitrary pattern;
c) depositing and etching the light sensing part 110 to form a primary light transmitting part 120 ';
d) forming a second mask layer (161) in an arbitrary pattern on the formed primary light transmission portion (120 ');
e) depositing and etching the primary light transmitting portion 120 'to form a secondary light transmitting portion 120 "; and
f) forming a first electrode (130) and a second electrode (140) for detecting a current generated in the light sensing unit (110). The method according to claim 6,
g) forming a third mask layer 162 in an arbitrary pattern on the secondary light transmitting portion 120 "
f) depositing and etching the secondary light transmitting portion 120 "to form a tertiary light transmitting portion 120 '". 8. The method of claim 7,
Wherein the first to third mask layers (160, 161, 162) are patterned to have different areas. A light sensing unit 110 which absorbs incident light to generate an electric current; a light sensing unit 110 that is integrally stacked on the light sensing unit 110 and has a light transmission spectrum different from that of the light sensing unit 110, A spectroscopic sensor 100 having a light transmitting portion 120 in which detection regions 101 of a thin film structure are formed in a matrix array; And
And a signal processing unit (200) for processing the output signal of the spectroscopic sensor (100) and restoring transmission spectrum information of the incident light. 10. The method of claim 9,
Wherein the spectroscopic apparatus further comprises a spectroscopic signal output unit for converting the transmission spectral information of the incident light reconstructed by the signal processing unit (200) into an arbitrary format and outputting the signal.

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