CN216773250U - On-chip integrated spectrometer and electronic equipment - Google Patents
On-chip integrated spectrometer and electronic equipment Download PDFInfo
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- CN216773250U CN216773250U CN202220388971.8U CN202220388971U CN216773250U CN 216773250 U CN216773250 U CN 216773250U CN 202220388971 U CN202220388971 U CN 202220388971U CN 216773250 U CN216773250 U CN 216773250U
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Abstract
The application discloses integrated spectrum appearance and electronic equipment on piece, integrated spectrum appearance includes on the piece: a chip substrate having a first surface; a detector array at the first surface, the detector array including a plurality of photodetectors, different ones of the photodetectors having different wavelength detection ranges; the light splitting system is positioned on the first surface and used for splitting light rays entering the light splitting system into a plurality of sub-light beams which correspond to the photodetectors one by one; the wavelength range of the sub-beams is positioned in the wavelength detection range of the corresponding photoelectric detector; the optical waveguide is positioned on the first surface and comprises a plurality of optical waveguide units which correspond to the sub-beams one by one, and the optical waveguide units are used for transmitting the sub-beams to the photoelectric detectors corresponding to the sub-beams. The on-chip integrated spectrometer realizes broadband light detection, improves the integration level and has smaller volume.
Description
Technical Field
The application relates to the technical field of semiconductor devices, in particular to an on-chip integrated spectrometer and an electronic device.
Background
Optical technology, especially optical communication technology, has been developed in the era of information explosion due to its special advantages of large information carrying capacity, high information exchange speed, low networking cost, high confidentiality and the like. Especially, as semiconductor technology is continuously developed, electrical structures are continuously limited by physical limits at the physical level, and optical structures have shown more outstanding potential.
Light, as an electromagnetic wave, covers a very wide band of wavelengths. The core of research on optical technology is to analyze the spectral structure, so that the spectrometer becomes a very important scientific research and production device. In particular, in order to pursue the effects of wide coverage, fast response, high precision and the like, a spectrometer device covering a communication band generally needs to adopt a relatively complex structure, and is high in cost and large in size. In some application scenarios requiring miniaturization, but still requiring high bandwidth and high precision, such as small wearable devices, mobile detection devices, etc., the application cannot be effectively satisfied. Therefore, miniaturization and integration of spectrometers are becoming an important technical direction and demand.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present application provides an on-chip integrated spectrometer and an electronic device, and the scheme is as follows:
an on-chip integrated spectrometer, the on-chip integrated spectrometer comprising:
a chip substrate having a first surface;
a detector array at the first surface, the detector array including a plurality of photodetectors, different ones of the photodetectors having different wavelength detection ranges;
the light splitting system is positioned on the first surface and used for splitting light rays entering the light splitting system into a plurality of sub-light beams which correspond to the photodetectors one by one; the wavelength range of the sub-beams is positioned in the wavelength detection range of the corresponding photoelectric detector;
the optical waveguide is positioned on the first surface and comprises a plurality of optical waveguide units which correspond to the sub-beams one by one, and the optical waveguide units are used for transmitting the sub-beams to the photoelectric detectors corresponding to the sub-beams.
Preferably, in the above integrated spectrometer on-chip, the detector comprises a heterojunction, the heterojunction comprising: a first semiconductor layer and a second semiconductor layer which are stacked;
the second semiconductor layer is arranged on the surface of one side, away from the chip substrate, of the first semiconductor layer, and the second semiconductor layer is a two-dimensional material film layer.
Preferably, in the above integrated spectrometer on chip, the semiconductor substrate has a patterned first film layer thereon, the first film layer comprising: the optical splitting system, the first semiconductor layer, and the optical waveguide.
Preferably, in the above integrated spectrometer on a chip, the two-dimensional material film layer comprises: one of a graphene film layer, a black phosphorus film layer, an indium selenide film layer, a molybdenum disulfide film layer, a tungsten selenide film layer and a boron nitride film layer;
the two-dimensional material film layers of different detectors are different.
Preferably, in the above integrated spectrometer on chip, the first semiconductor layer includes a first region and a second region, and a distance from the first region to the chip substrate is greater than a distance from the second region to the chip substrate;
the two-dimensional material film layer is located on the surface of the second area, and the first area is exposed.
Preferably, in the above integrated spectrometer on chip, the first semiconductor layer includes a first region and a second region; the two-dimensional material film layer is positioned on the surface of the second area and exposes the first area;
further comprising: the insulating layer covers the light splitting system, the photoelectric detector and the optical waveguide; and a first electrode and a second electrode are arranged on the surface of one side, which is far away from the photoelectric detector, of the insulating layer, the first electrode is in contact with the first semiconductor layer of the first area through a first through hole, and the second electrode is in contact with the two-dimensional material through a second through hole.
Preferably, in the above integrated spectrometer on a chip, the chip substrate comprises: any one of a Si substrate, an InP substrate, a GaAs substrate, and a lithium niobate substrate.
The embodiment of the present application further provides an electronic device, which includes: the integrated spectrometer on a chip of any of the above.
As can be seen from the above description, in the integrated spectrometer on chip and the manufacturing method thereof and the electronic device provided in the technical solution of the present application, the integrated spectrometer on chip includes: a chip substrate having a first surface; a detector array at the first surface, the detector array including a plurality of photodetectors, different ones of the photodetectors having different wavelength detection ranges; the light splitting system is positioned on the first surface and used for splitting light rays entering the light splitting system into a plurality of sub-light beams which correspond to the photodetectors one by one; the wavelength range of the sub-beams is positioned in the wavelength detection range of the corresponding photoelectric detector; the optical waveguide is positioned on the first surface and comprises a plurality of optical waveguide units which correspond to the sub-beams one by one, and the optical waveguide units are used for transmitting the sub-beams to the photoelectric detectors corresponding to the sub-beams. This application technical scheme integrated spectrum appearance on piece is integrated simultaneously on same chip basement has the different photoelectric detector of a plurality of wavelength detection range, will incide through optical splitting system and optical waveguide optical splitting system's light divide into the multi-beam with the sub-beam of photoelectric detector one-to-one, so that each the sub-beam in the corresponding wavelength range is surveyed to photoelectric detector can realize the light detection of broadband, and has improved the integrated level, has less volume.
Drawings
In order to more clearly illustrate the embodiments of the present application or technical solutions in related arts, the drawings used in the description of the embodiments or prior arts will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
The structures, proportions, and dimensions shown in the drawings and described in the specification are for illustrative purposes only and are not intended to limit the scope of the present disclosure, which is defined by the claims, but rather by the claims, it is understood that these drawings and their equivalents are merely illustrative and not intended to limit the scope of the present disclosure.
FIG. 1 is a top view of an on-chip integrated spectrometer provided in an embodiment of the present application;
FIG. 2 is a cross-sectional view of the integrated spectrometer on chip of FIG. 1 in the direction A-A';
FIG. 3 is a partial cross-sectional view of an on-chip integrated spectrometer provided in an embodiment of the present application;
fig. 4 is a flowchart of a method for manufacturing an on-chip integrated spectrometer according to an embodiment of the present disclosure.
Detailed Description
Embodiments of the present application will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the application are shown, and in which it is to be understood that the embodiments described are merely illustrative of some, but not all, of the embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The working principle of the spectrometer is that a beam is divided into a plurality of sub-beams by means of dispersion and the like, the wavelength ranges of different sub-beams are different, and the divided beams are intensively irradiated on a detector through optical components such as a collimator and the like to read the light intensity. The spectrometer integration scheme is similar, and light splitting is also required by means of a grating or a micro-prism structure. Then, the light waveguide is used for irradiating light onto the detector, so that light detection is realized, and a spectrum is formed through calculation. The conventional spectrometer generally performs optical signal detection by irradiating light beams onto corresponding detectors after beam splitting through an independent light splitting module and an independent light transmission module, and has low system integration level and large volume.
In addition, in the conventional spectrometer, the detection range of the wavelength of the detector shows that the spectrometer can only work in a narrow wave band. In order to perform detection with a wider spectrum, a plurality of detectors with different wavelength detection ranges need to be arranged, so that a more complicated light splitting module and a light transmission module are correspondingly needed, and the system volume is further increased. For an integrated chip, detectors with different wave bands often cannot achieve effective process integration, and the performance expansion of the scheme of the on-chip integrated spectrometer is limited.
In view of this, the present disclosure provides an on-chip integrated spectrometer, a method for manufacturing the same, and an electronic device, where the on-chip integrated spectrometer simultaneously integrates a plurality of photodetectors with different wavelength detection ranges on a same chip substrate, and divides light incident into the light splitting system into a plurality of sub-beams corresponding to the photodetectors one to one through a light splitting system and an optical waveguide, so that each of the photodetectors detects the sub-beams within the corresponding wavelength range, thereby achieving broadband light detection, improving integration level, and having a smaller size.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, the present application is described in further detail with reference to the accompanying drawings and the detailed description.
As shown in fig. 1, fig. 1 is a top view of an on-chip integrated spectrometer provided in an embodiment of the present application, and fig. 2 is a cross-sectional view of the on-chip integrated spectrometer shown in fig. 1 in a direction a-a', the on-chip integrated spectrometer including:
a chip substrate 11, the chip substrate 11 having a first surface S1;
a detector array 12 located on the first surface S1, the detector array 12 including a plurality of photodetectors 121, different photodetectors 121 having different wavelength detection ranges;
a light splitting system 13 located on the first surface S1, wherein the light splitting system 13 is configured to split the light entering the light splitting system 13 into a plurality of sub-beams corresponding to the photodetectors 121; the wavelength range of the sub-beam is located in the wavelength detection range of the corresponding photodetector 121;
the optical waveguide 14 is located on the first surface, the optical waveguide 14 includes a plurality of optical waveguide units 141 corresponding to the sub-beams one by one, and the optical waveguide units 141 are configured to transmit the sub-beams to the photodetectors 121 corresponding to the sub-beams.
In the integrated spectrometer on chip provided by the embodiment of the present application, the plurality of photodetectors 121 with different wavelength detection ranges are integrated on the surface of the same chip substrate 11, so that broadband light detection can be realized. And a plurality of photodetectors 121 with different wavelength detection ranges are integrated on the same chip substrate 11, and the light incident into the optical splitting system 13 is split into a plurality of sub-beams corresponding to the photodetectors 121 one by one through the optical splitting system 13 and the optical waveguide 14, so that each of the photodetectors 121 detects the sub-beams within the corresponding wavelength range, thereby not only realizing the light detection of a broad band, but also improving the integration level and having a smaller volume.
As shown in fig. 2, the detector 121 includes a heterojunction including: a first semiconductor layer 121a and a second semiconductor layer 121b which are stacked; the second semiconductor layer 121b is disposed on a surface of the first semiconductor layer 121a facing away from the chip substrate 11, and the second semiconductor layer 121b is a two-dimensional material film layer.
Wherein the two-dimensional material film layer comprises: graphene film layer, black phosphorus film layer, indium selenide (InSe) film layer, molybdenum disulfide (MoS)2) One of a film layer, a tungsten selenide (WSe) film layer, and a Boron Nitride (BN) film layer; the two-dimensional material film layers of different detectors 121 are different, so that different detectors 121 have different wavelength detection ranges. For example, a heterojunction built by two-dimensional material boron nitride can detect ultraviolet light and deep ultraviolet light, a heterojunction built by two-dimensional material molybdenum disulfide can detect visible light, and a heterojunction built by two-dimensional material black phosphorus can detect infrared light.
Due to the characteristics of the two-dimensional material, the interlayer bonding force is very weak, and a single-layer two-dimensional material film layer can be simply obtained by means of stripping and the like. When the heterojunction is built by adopting different two-dimensional material film layers, the mixed integration process scheme of the different two-dimensional material film layers on the chip substrate 11 has no essential difference, so that various detectors based on various two-dimensional materials can be simultaneously integrated on the same chip substrate 11, and the limitation of a conventional on-chip integrated photoelectric detector on a spectrometer is effectively solved.
In the integrated spectrometer on chip according to the embodiment of the present application, a patterned first film layer is disposed on the semiconductor substrate 11, and the first film layer includes: the optical splitting system 13, the first semiconductor layer 121a, and the optical waveguide 14. The light splitting system 13, the first semiconductor layer 121a and the optical waveguide 14 are simultaneously manufactured by using the same film layer, so that the manufacturing process is simplified, and the manufacturing cost is reduced. A buffer layer 16 may be formed on the first surface S1 of the chip substrate 11, and the first film layer is formed on the buffer layer 16, so that the buffer layer increases the attachment stability of the first film layer on the surface of the chip substrate 11.
In the integrated spectrometer on chip according to the embodiment of the present application, the key of the integration scheme of the detector 121 is to adopt a two-dimensional material with a suitable band gap to construct a heterojunction, so as to form the detector array 12 including the photodetector 121, in the detector array 12, the two-dimensional materials adopted by the photodetector 121 are different, so that the wavelength detection ranges of the photodetector 121 are different.
As described above, in the conventional technology, detectors of different wave bands often cannot achieve effective process integration, and the performance expansion of the scheme of the on-chip integrated spectrometer is limited. In the embodiment of the application, to the limitation of the conventional on-chip integrated spectrometer detector scheme, the detector 121 is made of a two-dimensional material film, and the heterojunction formed by the two-dimensional material is used as the detector 121, so that multiple different two-dimensional materials can be adopted to prepare a plurality of different wavelength detection ranges for the detector 121, and the on-chip integrated spectrometer capable of responding to a large-bandwidth spectrum is prepared by utilizing the characteristic that the two-dimensional materials are easy to integrate with the current photoelectric chip process. And based on the properties of wide coverage of the two-dimensional material on wave bands and adjustable energy gap, a small number of detectors 121 can be prepared by using a small number of two-dimensional materials, so that the full-wave band coverage from deep ultraviolet to infrared can be realized, and the problem of performance limitation of the on-chip spectrometer caused by the response width of the detectors is solved.
Wherein the chip substrate 11 includes: silicon (Si) substrate, indium phosphide (InP) substrate, gallium arsenide (GaAs) substrate, and lithium niobate (LiNbO)3) Any of the substrates.
As shown in fig. 3, fig. 3 is a partial cross-sectional view of an on-chip integrated spectrometer provided in an embodiment of the present application, and with reference to fig. 1 to 3, the first semiconductor layer 121a includes a first region and a second region; the two-dimensional material film layer is positioned on the surface of the second area and exposes the first area; the integrated spectrometer on-chip further comprises: an insulating layer 15, wherein the insulating layer 15 covers the optical splitting system 13, the photodetector 121, and the optical waveguide 14; the surface of the insulating layer 15 on the side away from the photodetector 121 has a first electrode 121c and a second electrode 121d, the first electrode 121c is in contact with the first semiconductor layer 121a of the first region through a first via hole, and the second electrode 121d is in contact with the two-dimensional material film through a second via hole. By arranging the first electrode 121c and the second electrode 121d, the on-chip integrated spectrometer can be connected to an external circuit, so that the external circuit can acquire spectral information detected by the on-chip integrated spectrometer.
In the manner shown in fig. 3, the first area and the second area of the first semiconductor layer 121a have the same height, that is, the surface of the first semiconductor layer 121a facing away from the chip substrate 11 is a plane parallel to the chip substrate 11.
In another mode, the first semiconductor layer 121a includes a first region and a second region, a distance from the first region to the chip substrate 11 is greater than a distance from the second region to the chip substrate 11, and the two-dimensional material film layer is located on a surface of the second region and exposes the first region. Because the second area is smaller than the first area in height, when the two-dimensional material is transferred, the two-dimensional material can be limited by the first area with larger height on the periphery of the second area. The two-dimensional material film layer and the underlying first semiconductor layer 121a are fixed by van der waals bonding. Optionally, the first region surrounds the second region.
Based on the above description, it can be seen that a core invention in the embodiment of the present application is that, on a conventional chip substrate 11, such as the above Si substrate, InP substrate, GaAs substrate, or lithium niobate substrate, a plurality of photodetectors 121 are built through a two-dimensional material transfer process and a plurality of two-dimensional materials, on one hand, an on-chip integrated spectrometer capable of responding to a large bandwidth spectrum can be prepared by using the characteristic that the two-dimensional materials are easily integrated with the current photoelectric chip process; on the other hand, based on the properties of wide coverage of the two-dimensional material on the wave band and adjustable energy gap, a small number of detectors 121 can be prepared by using a small number of two-dimensional materials, so that the full-wave-band coverage from deep ultraviolet to infrared can be realized, and the problem of performance limitation of the spectrometer on chip caused by the response width of the detectors is solved.
Based on the foregoing embodiment, another embodiment of the present application further provides an electronic device, including: the integrated spectrometer on a chip as described in any of the above embodiments.
The electronic equipment can acquire biological parameters based on the spectrum information detected by the on-chip integrated spectrometer, and the biological characteristic parameters include but are not limited to lactic acid, glucose, hydration, blood pressure, core body temperature and the like.
The integrated optical spectrometer is characterized in that a plurality of photoelectric detectors, a light splitting system and an optical waveguide which are needed by the photoelectric detectors are integrated on the same chip substrate, miniaturization of an on-chip integrated optical spectrometer is achieved, the electronic device can be wearable equipment such as a bracelet or a watch, and can also be portable handheld detection equipment, and continuous and non-invasive monitoring of multi-mode biological characteristic parameters can be achieved by detecting biological characteristic data at any time and any place.
Based on the foregoing embodiment, another embodiment of the present application further provides a manufacturing method for manufacturing the on-chip integrated spectrometer according to the foregoing embodiment, where the manufacturing method is as shown in fig. 4, and fig. 4 is a flowchart of a method for manufacturing the on-chip integrated spectrometer according to the present application, where the manufacturing method includes:
step S11: providing a chip substrate, wherein the chip substrate is provided with a first surface;
step S12: preparing a light splitting system, an optical waveguide and a detector array on the first surface;
wherein the content of the first and second substances,
the detector array comprises a plurality of photodetectors, different photodetectors having different wavelength detection ranges;
the light splitting system is used for splitting light rays entering the light splitting system into a plurality of sub-light beams which correspond to the photoelectric detectors one by one; the wavelength range of the sub-beams is positioned in the wavelength detection range of the corresponding photoelectric detector;
the optical waveguide comprises a plurality of optical waveguide units which correspond to the sub-beams one by one, and the optical waveguide units are used for transmitting the sub-beams to the photoelectric detectors corresponding to the sub-beams.
The structure of the integrated spectrometer on chip prepared by the manufacturing method in the embodiment of the present application can be illustrated by referring to the above embodiment. The integrated spectrometer on chip prepared by the manufacturing method integrates a plurality of photoelectric detectors with different wavelength detection ranges on the same chip substrate, and light rays incident into the light splitting system are divided into a plurality of sub-beams corresponding to the photoelectric detectors one by one through the light splitting system and the optical waveguide, so that each photoelectric detector can detect the sub-beams in the corresponding wavelength range, the light detection of a wide band can be realized, the integration level is improved, and the integrated spectrometer has a small size.
In the manufacturing method according to the embodiment of the present application, the detector includes a heterojunction, and the heterojunction includes: a first semiconductor layer and a second semiconductor layer which are stacked;
in step S12, preparing a light splitting system, an optical waveguide, and a detector array on the first surface, including:
first, a buffer layer is formed on the first surface.
Then, a patterned first film layer is formed on the surface of one side, away from the chip substrate, of the buffer layer, wherein the first film layer comprises the light splitting system, the optical waveguide and the first semiconductor layer. And forming a first film layer with a required pattern based on an etching process. The patterned first film layer reserves the position where the two-dimensional material film layer is transferred and built so as to build a heterojunction. The two-dimensional material layer may be a single two-dimensional material layer, and the two-dimensional material layer may include, but is not limited to, a graphene layer, a black phosphorus layer, an indium selenide (InSe) layer, and a molybdenum disulfide (MoS) layer2) A film layer, a tungsten selenide (WSe) film layer, and a Boron Nitride (BN) film layer.
And finally, arranging a two-dimensional material film layer on the surface of the first semiconductor layer, which is far away from the buffer layer, by using a two-dimensional material transfer technology, wherein the two-dimensional material film layer is the second semiconductor layer. And (3) setting up the stripped single-layer two-dimensional material film layers to the specified photoelectric detector positions one by one, and respectively transferring the single-layer two-dimensional material film layers to the corresponding photoelectric detector positions according to the difference of wavelength detection ranges and the distinction of light splitting paths. And after the detector array is formed on the basis of two-dimensional material film transfer, manufacturing an electrode of the photoelectric detector by adopting metal deposition and etching processes, and further finishing the manufacture of the detector array.
In the manufacturing method of the embodiment of the application, a plurality of two-dimensional materials are adopted to construct the heterojunction photoelectric detector, the two-dimensional materials are similar in property, the processing mode is similar, the integration and construction of the plurality of two-dimensional materials can be realized, the integration of the photoelectric detectors with different wavelength detection ranges can be realized on the same chip substrate, the defect of the conventional integrated photoelectric detector is avoided, the full-band on-chip integrated photoelectric detector from infrared to deep ultraviolet bands is realized, and the application range of the integrated spectrometer is greatly expanded.
The embodiments in the present specification are described in a progressive manner, or in a parallel manner, or in a combination of a progressive manner and a parallel manner, and each embodiment focuses on differences from other embodiments, and similar parts in various embodiments can be referred to each other. As for the electronic device and the manufacturing method disclosed in the embodiments, since the electronic device and the manufacturing method correspond to the on-chip integrated spectrometer disclosed in the embodiments, the description is relatively simple, and relevant points can be described with reference to the corresponding parts of the on-chip integrated spectrometer.
It is to be understood that in the description of the present application, the drawings and the description of the embodiments are to be regarded as illustrative in nature and not as restrictive. Like numerals refer to like structures throughout the description of the embodiments. Additionally, the figures may exaggerate the thicknesses of some layers, films, panels, regions, etc. for ease of understanding and ease of description. It will also be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In addition, "on …" means to position an element on or under another element, but does not essentially mean to position the element on the upper side of the other element according to the direction of gravity.
The terms "upper," "lower," "top," "bottom," "inner," "outer," and the like refer to an orientation or positional relationship that is based on the orientation or positional relationship shown in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present application. When a component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components may also be present.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. An on-chip integrated spectrometer, comprising:
a chip substrate having a first surface;
a detector array at the first surface, the detector array including a plurality of photodetectors, different ones of the photodetectors having different wavelength detection ranges;
the light splitting system is positioned on the first surface and used for splitting light rays entering the light splitting system into a plurality of sub-light beams which correspond to the photodetectors one by one; the wavelength range of the sub-beams is positioned in the wavelength detection range of the corresponding photoelectric detector;
the optical waveguide is positioned on the first surface and comprises a plurality of optical waveguide units which correspond to the sub-beams one by one, and the optical waveguide units are used for transmitting the sub-beams to the photoelectric detectors corresponding to the sub-beams.
2. The integrated spectrometer on-chip as defined in claim 1, wherein the detector comprises a heterojunction comprising: a first semiconductor layer and a second semiconductor layer which are stacked;
the second semiconductor layer is arranged on the surface of one side, away from the chip substrate, of the first semiconductor layer, and the second semiconductor layer is a two-dimensional material film layer.
3. The integrated spectrometer of claim 2, wherein the semiconductor substrate has a patterned first film layer thereon, the first film layer comprising: the optical splitting system, the first semiconductor layer, and the optical waveguide.
4. The integrated spectrometer on-chip as defined in claim 2, wherein the two-dimensional film layer of material comprises: one of a graphene film layer, a black phosphorus film layer, an indium selenide film layer, a molybdenum disulfide film layer, a tungsten selenide film layer and a boron nitride film layer;
the two-dimensional material film layers of different detectors are different.
5. The integrated spectrometer on-chip as defined in claim 2, wherein the first semiconductor layer comprises a first region and a second region, the first region being located a greater distance from the chip substrate than the second region;
the two-dimensional material film layer is located on the surface of the second area, and the first area is exposed.
6. The integrated spectrometer on-chip as defined in claim 2, wherein the first semiconductor layer comprises a first region and a second region; the two-dimensional material film layer is positioned on the surface of the second area and exposes the first area;
further comprising: the insulating layer covers the light splitting system, the photoelectric detector and the optical waveguide; and a surface of one side of the insulating layer, which is far away from the photoelectric detector, is provided with a first electrode and a second electrode, the first electrode is in contact with the first semiconductor layer of the first area through a first through hole, and the second electrode is in contact with the two-dimensional material film layer through a second through hole.
7. The integrated spectrometer on-chip as defined in claim 1, wherein the chip substrate comprises: any one of a Si substrate, an InP substrate, a GaAs substrate, and a lithium niobate substrate.
8. An electronic device, comprising: the integrated spectrometer on chip as claimed in any of claims 1-7.
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