CN112645277A - Novel infrared detector and preparation method thereof - Google Patents
Novel infrared detector and preparation method thereof Download PDFInfo
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- CN112645277A CN112645277A CN202011460898.2A CN202011460898A CN112645277A CN 112645277 A CN112645277 A CN 112645277A CN 202011460898 A CN202011460898 A CN 202011460898A CN 112645277 A CN112645277 A CN 112645277A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/206—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices on foils
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of semiconductors, and discloses a novel infrared detector which comprises a micro-bridge resonant cavity structure arranged on a substrate with a processing circuit, wherein the micro-bridge resonant cavity structure comprises a sacrificial layer, a support and electric connection hole and a functional layer, the sacrificial layer is made of a carbon-based material, and the functional layer covers the surface of the whole micro-bridge and seals the sacrificial layer filled in the support and electric connection hole. The surface film layer structure of the whole micro-bridge resonant cavity structure is more simplified, so that the difficulty of stress balance of the micro-bridge structure is reduced, the cost brought by an additional film layer is reduced, the performance of a product is greatly improved, and the micro-bridge resonant cavity structure has a great application prospect.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a novel infrared detector and a preparation method thereof.
Background
The core structure of the non-refrigeration type infrared detector product is a micro-bridge resonant cavity structure, the traditional infrared detector micro-bridge resonant cavity structure is realized by using Si or SiO2 or organic matters as sacrificial layers and a release process, wherein the organic matter sacrificial layers can bring organic pollution to a production line and cannot be used in a large scale; when the other two sacrificial layers are released, the released gas may damage other film layers, so that the upper and lower surfaces of the microbridge structure are both provided with the release protection layers, and in addition, the sensitive layer, the electrode layer, the structural layer, the absorption layer and the like are added, so that the whole structural film layer is too complex, the structural stress control is very difficult, and the performance is also reduced due to the stacking of the film layers. Meanwhile, the resistance of the sensitive layer of the final product is influenced by the integration process, so that the resistance of the sensitive layer of the final product has a large variation range, and the test calibration cost of the product is also influenced.
Disclosure of Invention
The invention aims to overcome the defects that in the prior art, Si or SiO2 or organic matters are used as sacrificial layers, organic pollution is easily caused, other film layers can be damaged by released gas, the whole structure film layer is too complex and the like, and provides a novel infrared detector and a preparation method thereof.
In order to achieve the purpose, the invention provides the following technical scheme:
the utility model provides a novel infrared detector, is including setting up the microbridge resonant cavity structure on the substrate of taking processing circuit, microbridge resonant cavity structure includes sacrificial layer, support and electrical connection hole and functional layer, the sacrificial layer adopts carbon-based material to make, the functional layer covers the surface at whole microbridge to pack and seal at the sacrificial layer that supports in electrical connection hole.
Furthermore, the micro-bridge resonant cavity structure further comprises a sensitive layer and a functional layer arranged above the sensitive layer, and a resistance adjusting area is arranged in the whole area or part of area, in the sensitive layer, in contact with the functional layer.
Furthermore, the resistance adjusting area enables impurities in the functional layer of the corresponding area to be diffused to the sensitive layer through a heat treatment process.
Further, all or a part of the region of the functional layer in contact with the sensitive layer contains an impurity with a specified doping concentration, or all of the region of the entire functional layer contains an impurity with a specified doping concentration.
Further, the impurity is set to be one or more of SiO2, SiON, SiN or SiC material of B, P, As, Te, Sb, In.
Furthermore, the bottom and the side wall of the support and electric connection hole comprise a first metal layer and a second metal layer from outside to inside, the periphery of the top of the support and electric connection hole comprises the first metal layer and the second metal layer from bottom to top, and the first metal layer is connected with the resistance adjusting area.
Further, the first metal layer and the second metal layer are made of the same or different materials, and the materials comprise Ti \ TiN, Ta \ TaN, TiN, TaN or Pt.
Further, the thickness of the second metal layer is larger than that of the first metal layer.
Further, the micro-bridge resonant cavity structure sequentially comprises a substrate with a processing circuit, a top metal layer serving as a reflecting layer, a carbon-based sacrificial layer, a supporting and electric connecting hole embedded in the carbon-based sacrificial layer, a sensitive layer, a resistance adjusting area embedded in the sensitive layer, an electrode layer, a functional layer and an absorption layer from bottom to top, wherein the electrode layer comprises a first metal layer and a second metal layer.
A preparation method of a novel infrared detector comprises the following steps:
a) depositing a top metal layer on a substrate with a processing circuit, then carrying out patterning processing, filling a medium to flatten the metal layer, and then sequentially depositing a first carbon-based sacrificial layer and a sensitive layer;
b) photoetching and etching the sensitive layer and the first carbon-based sacrificial layer, and stopping on the top metal layer to form a supporting and electric connection hole;
c) depositing a first metal layer
d) Depositing a second carbon-based sacrificial layer;
e) carrying out patterning treatment on the second carbon-based sacrificial layer, removing the second carbon-based sacrificial layer in the supporting and electric connecting hole and the peripheral region at the top of the supporting and electric connecting hole, and removing the photoresist;
f) depositing a second metal layer;
g) carrying out patterning treatment on the second metal layer, removing the second carbon-based sacrificial layer on the surface of the residual micro-bridge by using oxygen plasma, depositing a third carbon-based sacrificial layer, and filling the supporting and electric connecting holes;
h) etching the third carbon-based sacrificial layer by using oxygen plasma in a full-wafer manner, and only reserving the third carbon-based sacrificial layer in the supporting and electric connecting hole;
i) patterning the first metal layer on the surface of the microbridge;
j) depositing a functional layer and an absorption layer in sequence, and carrying out graphical processing;
k) heat treating the functional layer to diffuse the impurity into the sensitive layer contacting with it, and the resistance adjusting area in the sensitive layer;
l) releasing the first carbon-based sacrificial layer to complete the device preparation.
The beneficial technical effects of the invention are as follows:
1. the carbon-based material is used as a sacrificial layer, oxygen is used as release gas, the release gas cannot damage conventional sensitive layers, electrode layers and other key film layers, meanwhile, the thin electrode layers are arranged on the sensitive layers to realize vacuum matching, but thicker conductive electrode materials are arranged on the tops and the side walls of the supporting and electric connecting holes to reduce parasitic resistance and enhance electric connection, and the carbon-based sacrificial layer is filled to enhance the supporting effect; in addition, the functional layer covers the whole micro-bridge surface and seals the carbon-based sacrificial layer filled in the supporting and electric connecting holes to prevent the subsequent release of damage to the carbon-based sacrificial layer.
2. The functional layer is directly covered on a partial region of the sensitive layer and is a medium containing doping elements with specified concentration, so that impurities in the functional layer are diffused into the sensitive layer during subsequent heat treatment, and a resistance adjusting region of the sensitive layer is formed, so that the resistance value of the sensitive layer is optimized and adjusted.
3. Finally, the surface film layer structure of the whole micro-bridge resonant cavity structure is simplified, so that the difficulty of stress balance of the micro-bridge structure is reduced, meanwhile, the cost caused by an additional film layer is reduced, the performance of the product is greatly improved, and the micro-bridge resonant cavity structure has a wide application prospect.
Drawings
FIG. 1 is a schematic overall flow diagram of the present invention;
FIG. 2 is a schematic representation of the overall structure fabrication process of the present invention;
the structure comprises a substrate 1, a sacrificial layer 2, a first carbon-based sacrificial layer 21, a second carbon-based sacrificial layer 22, a third carbon-based sacrificial layer 23, a functional layer 3, a support and electric connection hole 4, a sensitive layer 5, an electrode layer 6, a first metal layer 61, a second metal layer 62, a resistance adjusting area 7, a top metal layer 8 and an absorption layer 9.
Detailed Description
The following detailed description of the preferred embodiments will be made with reference to the accompanying drawings.
The invention provides a novel infrared detector, which comprises a plurality of micro-bridge resonant cavity structures arranged on a substrate 1 with a processing circuit, wherein each micro-bridge resonant cavity structure comprises a sacrificial layer 2, a functional layer 3 and a supporting and electric connecting hole 4, the sacrificial layer 2 is made of carbon-based materials, the functional layer 3 covers the surface of the whole micro-bridge, and the sacrificial layer 2 made of the carbon-based materials filled in the supporting and electric connecting hole 4 is sealed. Thus, the carbon-based material is used for replacing the traditional Si or SiO2 or organic matter to be used as a sacrificial layer, the oxygen is used as release gas, the release gas can not damage the conventional sensitive layer 5, the electrode layer 6 and other key film layers, meanwhile, the sacrificial layer 2 is used for filling the supporting and electric connecting holes 4, the functional layer 3 covers the whole micro-bridge surface, the supporting effect is enhanced, and the damage caused by subsequent release can also be prevented.
In addition, in view of the patterning process, some regions of the sensitive layer 5 in the microbridge resonator structure are directly under the functional layer 3, i.e. directly contact with the functional layer 3, and all or part of the regions contacting with these regions are set as the resistance adjusting regions 7, and the resistance adjusting regions 7 can be formed by diffusing impurities inside the functional layer 3 of the corresponding regions into the sensitive layer 5 through a heat treatment process. The whole or partial region of the functional layer 3 In direct contact with the sensitive layer 5 contains impurities with specified doping concentration, or the whole functional layer 3 contains impurities with specified doping concentration, and the impurities can be set to be one or more of materials such As SiO2, SiON, SiN or SiC of B, P, As, Te, Sb and In. Therefore, the resistance value of the sensitive layer 5 can be optimized and adjusted conveniently, the variation range of the resistance value of the sensitive layer 5 is narrowed, and the test calibration cost of a final product is reduced.
Specifically, the micro-bridge resonant cavity structure sequentially comprises a substrate 1 with a processing circuit, a top metal layer 8, a top metal layer serving as a reflecting layer, a sacrificial layer 2 made of a carbon-based material, a support and electric connection hole 4 embedded in the sacrificial layer, a sensitive layer 5, a resistance adjusting region 7 in the sensitive layer 5, an electrode layer 6, a functional layer 3 and an absorption layer 9 from bottom to top, wherein the electrode layer 6 comprises a first metal layer 61 and a second metal layer 62, the bottom of the support and electric connection hole 4 is electrically connected with the top metal layer 8, the bottom and the side wall of the support and electric connection hole comprise the first metal layer 61 and the second metal layer 62 from outside to inside, the periphery of the top of the support and electric connection hole comprises the first metal layer 61 and the second metal layer 62 from bottom to top, the first metal layer 61 is connected with the resistance adjusting region 7, and the second metal layer 62 can not be connected.
Considering that the electrode layer 6 of the micro-bridge resonant cavity structure is as thin as possible, the side wall of the supporting and electrical connection hole 4 is thick, and the supporting effect can be guaranteed, therefore, the electrode layer 6 of the present application adopts a double-layer structure, the second metal layer 62 is thicker, and is mainly concentrated in the inside and the top periphery of the supporting and electrical connection hole 4, so as to ensure that the supporting and electrical connection hole 4 has enough supporting force, and simultaneously, the second metal layer 62 can have good electrical connection effect with the top metal layer 8, and the first metal layer 61 is mainly distributed on the surface of the micro-bridge, so as to ensure that the micro-bridge has a high enough resistance value, and meet the performance requirement of vacuum matching.
Since the inside of the supporting and electrical connecting hole 4 is filled with the carbon-based sacrificial layer, and the functional layer 3 and the absorption layer 9 are sequentially deposited on the electrode layer 6 on the surface of the microbridge, the sacrificial layer 2 is released subsequently without causing damage to the electrode layer, and therefore, the first metal layer 61 and the second metal layer 62 may be made of the same or different materials, such as Ti and TiN, Ta and TaN, TiN, TaN, or Pt.
The invention also provides a preparation method based on the novel infrared detector, which comprises the following steps as shown in figures 1 and 2:
step a) depositing a top metal layer 8 on a substrate 1 with a processing circuit, then carrying out graphical processing, enabling part of the top metal layer 8 to exist as a reflecting layer, then filling a medium to flatten the reflecting layer, providing a smooth foundation for the deposition of a subsequent film layer, and then sequentially depositing a first carbon-based sacrificial layer 21 and a sensitive layer 5;
step b) photoetching and etching the sensitive layer 5 and the first carbon-based sacrificial layer 21, and stopping on the top metal layer 8 to form a support and electric connection hole 4, wherein the support and electric connection hole 4 cannot be arranged on the top metal layer 8 as a reflecting layer;
step c) depositing a first metal layer 61, wherein the first metal layer 61 exists as a real electrode layer 6 of the chip, and can be thinner than a second metal layer 62 deposited in a subsequent process, such as 10A-2000A;
step d) depositing a second carbon based sacrificial layer 22;
step e) patterning the second carbon-based sacrificial layer 22, removing the second carbon-based sacrificial layer 22 in the supporting and electrically connecting hole 4 and in the vicinity of the top periphery thereof, and removing the photoresist by a wet method;
step f) depositing a second metal layer 62;
step g) patterning the second metal layer 62, and reserving the second metal layer 62 in the supporting and electrical connection hole 4 and the top peripheral adjacent region, wherein the second metal layer 62 is mainly used for improving the supporting effect of the supporting and electrical connection hole 4 and simultaneously can ensure good electrical connection with the top metal layer 8, so that compared with the first metal layer 61, the thickness can be set to be larger, such as 2000A-1 μm, then oxygen plasma is used for removing the second carbon-based sacrificial layer 22 on the surface of the remaining micro-bridge, then the third carbon-based sacrificial layer 23 is deposited, and the supporting and electrical connection hole 4 is filled;
step h) using oxygen plasma to etch the third carbon-based sacrificial layer 23 in a full wafer manner (Blanket etch), only the third carbon-based sacrificial layer 23 in the supporting and electrically connecting hole 4 is reserved, the supporting force is further increased, and the third carbon-based sacrificial layer 23 can have a gap;
step i) patterning and forming a pattern of the first metal layer 61 on the surface of the microbridge by wet etching, so as to prepare for forming the resistance adjusting area 7 in the sensitive layer 5 subsequently;
step j) depositing the functional layer 3 and the absorption layer 9 In sequence, and performing patterning treatment, wherein the functional layer 3 seals the third carbon-based sacrificial layer 23 filled In the supporting and electric connecting hole 4 and covers the surface of the whole microbridge, so that the absorption layer 9 also covers the surface of the whole microbridge, the absorption area of light is increased, and the performance of the product is improved;
step k) according to actual needs, carrying out heat treatment on the region containing the impurities in the functional layer 3 to enable the impurities in the functional layer to diffuse into the corresponding region in the sensitive layer 5, so as to form a resistance adjusting region 7, and certainly, other process methods can be adopted, such as injection;
step l) releasing the first carbon-based sacrificial layer to finish the preparation.
The above description is only a preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the appended claims.
Claims (10)
1. A novel infrared detector comprises a micro-bridge resonant cavity structure arranged on a substrate with a processing circuit, and is characterized in that: the micro-bridge resonant cavity structure comprises a sacrificial layer, a support and electric connection hole and a functional layer, wherein the sacrificial layer is made of a carbon-based material, and the functional layer covers the surface of the whole micro-bridge and seals the sacrificial layer filled in the support and electric connection hole.
2. The new infrared detector as set forth in claim 1, characterized in that: the micro-bridge resonant cavity structure further comprises a sensitive layer and a functional layer arranged above the sensitive layer, and a resistance adjusting area is arranged in the whole area or part of area, in the sensitive layer, in contact with the functional layer.
3. The new infrared detector as set forth in claim 2, characterized in that: and the resistance adjusting region is formed by diffusing impurities in the functional layer of the corresponding region to the sensitive layer through a heat treatment process.
4. The novel infrared detector of claim 3, characterized in that: all or part of the region of the functional layer, which is in contact with the sensitive layer, contains impurities with specified doping concentration, or all the region of the whole functional layer contains impurities with specified doping concentration.
5. The novel infrared detector of claim 4, characterized in that: the impurities are set to be one or more of SiO2, SiON, SiN or SiC materials of B, P, As, Te, Sb and In.
6. The new infrared detector as set forth in claim 2, characterized in that: the bottom and the side wall of the support and electric connection hole comprise a first metal layer and a second metal layer from outside to inside, the periphery of the top of the support and electric connection hole comprises the first metal layer and the second metal layer from bottom to top, and the first metal layer is connected with the resistance adjusting area.
7. The novel infrared detector of claim 6, characterized in that: the first metal layer and the second metal layer are made of the same or different materials, and the materials comprise Ti \ TiN, Ta \ TaN, TiN, TaN or Pt.
8. The novel infrared detector of claim 6, characterized in that: the thickness of the second metal layer is greater than that of the first metal layer.
9. The novel infrared detector of claim 6, characterized in that: the micro-bridge resonant cavity structure sequentially comprises a substrate with a processing circuit, a top metal layer, a reflecting layer, a carbon-based sacrificial layer, a support and electric connection hole embedded in the carbon-based sacrificial layer, a sensitive layer, a resistance adjusting area in the sensitive layer, an electrode layer, a functional layer and an absorption layer from bottom to top, wherein the electrode layer comprises a first metal layer and a second metal layer.
10. A preparation method of a novel infrared detector is characterized by comprising the following steps:
a) depositing a top metal layer on a substrate with a processing circuit, then carrying out patterning processing, filling a medium to flatten the metal layer, and then sequentially depositing a first carbon-based sacrificial layer and a sensitive layer;
b) photoetching and etching the sensitive layer and the first carbon-based sacrificial layer, and stopping on the top metal layer to form a supporting and electric connection hole;
c) depositing a first metal layer
d) Depositing a second carbon-based sacrificial layer;
e) carrying out patterning treatment on the second carbon-based sacrificial layer, removing the second carbon-based sacrificial layer in the supporting and electric connecting hole and the peripheral region at the top of the supporting and electric connecting hole, and removing the photoresist;
f) depositing a second metal layer;
g) carrying out patterning treatment on the second metal layer, removing the second carbon-based sacrificial layer on the surface of the residual micro-bridge by using oxygen plasma, depositing a third carbon-based sacrificial layer, and filling the supporting and electric connecting holes;
h) etching the third carbon-based sacrificial layer by using oxygen plasma in a full-wafer manner, and only reserving the third carbon-based sacrificial layer in the supporting and electric connecting hole;
i) patterning the first metal layer on the surface of the microbridge;
j) depositing a functional layer and an absorption layer in sequence, and carrying out graphical processing;
k) heat treating the functional layer to diffuse the impurity into the sensitive layer contacting with it, and the resistance adjusting area in the sensitive layer;
l) releasing the first carbon-based sacrificial layer to complete the device preparation.
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| CN113764539A (en) * | 2021-09-08 | 2021-12-07 | 上海集成电路研发中心有限公司 | Infrared detector and preparation method thereof |
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