CN106506026A - 使用调谐信息以自适应动态修改rf信号链路的参数的装置和方法 - Google Patents
使用调谐信息以自适应动态修改rf信号链路的参数的装置和方法 Download PDFInfo
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- CN106506026A CN106506026A CN201610791259.1A CN201610791259A CN106506026A CN 106506026 A CN106506026 A CN 106506026A CN 201610791259 A CN201610791259 A CN 201610791259A CN 106506026 A CN106506026 A CN 106506026A
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 230000006978 adaptation Effects 0.000 title abstract description 3
- 238000012986 modification Methods 0.000 title abstract description 3
- 230000004048 modification Effects 0.000 title abstract description 3
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 description 30
- 238000001914 filtration Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000011017 operating method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000013102 re-test Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/0805—Details of the phase-locked loop the loop being adapted to provide an additional control signal for use outside the loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1293—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1218—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the generator being of the balanced type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J1/00—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general
- H03J1/0008—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general using a central processing unit, e.g. a microprocessor
- H03J1/0041—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general using a central processing unit, e.g. a microprocessor for frequency synthesis with counters or frequency dividers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0067—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/546—A tunable capacitance being present in an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
- H03J2200/10—Tuning of a resonator by means of digitally controlled capacitor bank
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/844,447 US9467151B1 (en) | 2015-09-03 | 2015-09-03 | Apparatus and methods for using tuning information to adaptively and dynamically modify the parameters of an RF signal chain |
US14/844,447 | 2015-09-03 |
Publications (2)
Publication Number | Publication Date |
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CN106506026A true CN106506026A (zh) | 2017-03-15 |
CN106506026B CN106506026B (zh) | 2019-04-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610791259.1A Active CN106506026B (zh) | 2015-09-03 | 2016-08-31 | 使用调谐信息以自适应动态修改rf信号链路的参数的装置和方法 |
Country Status (3)
Country | Link |
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US (1) | US9467151B1 (zh) |
EP (1) | EP3139506B1 (zh) |
CN (1) | CN106506026B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110346398A (zh) * | 2019-08-23 | 2019-10-18 | 武汉中科牛津波谱技术有限公司 | 一种磁共振探头矢量调谐检测装置和方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106452433A (zh) * | 2016-11-17 | 2017-02-22 | 深圳市华讯方舟卫星通信有限公司 | 频率合成器 |
CN116405042B (zh) * | 2023-05-31 | 2023-08-22 | 广州博远装备科技有限公司 | 一种自动天线调谐电路及系统 |
Citations (5)
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CN101027846A (zh) * | 2004-08-13 | 2007-08-29 | 诺基亚公司 | 具有相似谐振电路拓扑和使用相同校准信号来补偿工艺差异的单片lna和vco |
CN101459465A (zh) * | 2007-12-11 | 2009-06-17 | 中兴通讯股份有限公司 | 一种支持多频段工作方式的本振装置 |
CN101521507A (zh) * | 2008-02-27 | 2009-09-02 | 宏观微电子股份有限公司 | 多波段压控振荡器 |
US20090325521A1 (en) * | 2008-06-27 | 2009-12-31 | Sirf Technology, Inc. | Auto-Tuning System for an On-Chip RF Filter |
US8130047B2 (en) * | 2010-04-30 | 2012-03-06 | Texas Instruments Incorporated | Open loop coarse tuning for a PLL |
Family Cites Families (9)
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US6097244A (en) * | 1998-12-17 | 2000-08-01 | Centillium Communications, Inc. | Highly-linear continuous-time filter for a 3-volt supply with PLL-controlled resistor and digitally-controlled capacitor |
GB2493798B (en) | 2011-08-19 | 2016-04-27 | Kwan Kin-Wah | Fractional PLL frequency synthesizer employing 1 bit delta-sigma modulation scheme with distributed error feedback |
US8508308B2 (en) * | 2011-09-01 | 2013-08-13 | Lsi Corporation | Automatic frequency calibration of a multi-LCVCO phase locked loop with adaptive thresholds and programmable center control voltage |
US8963648B2 (en) | 2011-09-09 | 2015-02-24 | Analog Devices, Inc. | Low noise oscillator having switching network |
US8687756B2 (en) | 2011-09-19 | 2014-04-01 | Lsi Corporation | CDR with digitally controlled lock to reference |
US8766712B2 (en) | 2012-05-04 | 2014-07-01 | Analog Devices, Inc. | Quality factor tuning for LC circuits |
US8918070B2 (en) | 2012-05-04 | 2014-12-23 | Analog Devices, Inc. | Frequency tuning for LC circuits |
US8970310B2 (en) | 2012-10-10 | 2015-03-03 | Analog Devices, Inc. | Monolithic band switched coupled push-push oscillator |
DE102014102940A1 (de) | 2013-03-13 | 2014-09-18 | Analog Devices, Inc. | Oszillator mit LC-Primär- und Sekundärschwingschaltungen |
-
2015
- 2015-09-03 US US14/844,447 patent/US9467151B1/en active Active
-
2016
- 2016-08-19 EP EP16185018.5A patent/EP3139506B1/en active Active
- 2016-08-31 CN CN201610791259.1A patent/CN106506026B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101027846A (zh) * | 2004-08-13 | 2007-08-29 | 诺基亚公司 | 具有相似谐振电路拓扑和使用相同校准信号来补偿工艺差异的单片lna和vco |
CN101459465A (zh) * | 2007-12-11 | 2009-06-17 | 中兴通讯股份有限公司 | 一种支持多频段工作方式的本振装置 |
CN101521507A (zh) * | 2008-02-27 | 2009-09-02 | 宏观微电子股份有限公司 | 多波段压控振荡器 |
US20090325521A1 (en) * | 2008-06-27 | 2009-12-31 | Sirf Technology, Inc. | Auto-Tuning System for an On-Chip RF Filter |
US8130047B2 (en) * | 2010-04-30 | 2012-03-06 | Texas Instruments Incorporated | Open loop coarse tuning for a PLL |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110346398A (zh) * | 2019-08-23 | 2019-10-18 | 武汉中科牛津波谱技术有限公司 | 一种磁共振探头矢量调谐检测装置和方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106506026B (zh) | 2019-04-23 |
EP3139506A1 (en) | 2017-03-08 |
EP3139506B1 (en) | 2018-11-14 |
US9467151B1 (en) | 2016-10-11 |
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