CN106498487A - Melting zone complementary field device and the VGF monocrystal growing furnaces with which - Google Patents
Melting zone complementary field device and the VGF monocrystal growing furnaces with which Download PDFInfo
- Publication number
- CN106498487A CN106498487A CN201611027330.5A CN201611027330A CN106498487A CN 106498487 A CN106498487 A CN 106498487A CN 201611027330 A CN201611027330 A CN 201611027330A CN 106498487 A CN106498487 A CN 106498487A
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- China
- Prior art keywords
- field device
- magnetic
- magnet
- single crystal
- conductive board
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- 238000002844 melting Methods 0.000 title claims abstract description 15
- 230000008018 melting Effects 0.000 title claims abstract description 15
- 230000000295 complement effect Effects 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 230000006698 induction Effects 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 150000002910 rare earth metals Chemical class 0.000 claims description 4
- 239000007787 solid Substances 0.000 abstract description 5
- 239000000155 melt Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 10
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a kind of melting zone complementary field device and the VGF monocrystal growing furnaces with which, the magnetic field device includes magnet and inside and outside magnetic conductive board, it is sheathed on single crystal growing furnace outer using being centrosymmetrically arranged, for producing magnetic field in VGF monocrystal growing furnaces, wherein interior magnetic conductive board is located between single crystal growing furnace and magnet, and contact with single crystal growing furnace and magnet, outer magnetic conductive board is located at side of the magnet away from interior magnetic conductive board.The melt convection that effectively can be suppressed using symmetrical permanent magnetic field in single crystal growing furnace of the invention, and reduce the temperature fluctuation of solid liquid interface, improve crystal mass.
Description
Technical field
The present invention relates to single crystal growth apparatus technical field, and in particular to a kind of melting zone complementary field device and with which
VGF monocrystal growing furnaces.
Background technology
Method is vertical gradient condensation method to VGF (vertical gradient freeze, VGF) is by American scholar
One patented technology of Sonnenberg et al. exploitations.In recent years, scientific research personnel both domestic and external is carried out to VGF methods growth monocrystalline
Substantial amounts of experimentation, and achieve many achievements.Monberg of AT＆T Labs of the U.S. et al. is grown using VGF methods
VGF technology is applied to semiconducting compound crystal growth by indium phosphide (InP) and GaAs (GaAs) crystal first.With VGF
Technology is updated, and more semiconductor monocrystals are grown out.Nowadays the method has been successfully applied to GaAs
(GaAs) monocrystalline such as crystal, indium phosphide (InP) crystal, germanium (Ge) and cadmium-zinc-teiluride (CdZnTe).
Skin spy Rudoiph (P.Rudolph) proves that the magnetic field of movement produces Lorentz force, and it can optimization crystal growth mistake
The transmission of quality and heat in journey.Afterwards for the application in magnetic field, either theoretical or experiment is all conducted extensive research,
Particularly VGF methods grow a variety of materials.But now technology growth monocrystalline has that crystal forming rate is low, and crystal mass difference etc. is asked
Topic.
Content of the invention
It is an object of the invention to overcoming the shortcomings of that prior art is present, there is provided a kind of melting zone complementary field device and have
Its VGF monocrystal growing furnaces, can effectively be suppressed the melt convection in single crystal growing furnace, and reduce solid-liquid using symmetrical permanent magnetic field
The temperature fluctuation at interface, improves crystal mass.
Complementary field device in melting zone of the present invention：The magnetic field device includes magnet and inside and outside magnetic conductive board, is sheathed on
Single crystal growing furnace is outer using being centrosymmetrically arranged, and for producing magnetic field in VGF monocrystal growing furnaces, wherein interior magnetic conductive board is located at single crystal growing furnace
Between magnet, and contact with single crystal growing furnace and magnet, outer magnetic conductive board is located at side of the magnet away from interior magnetic conductive board.
Preferably, the magnetic field device also includes that magnetic is gripped and lower yoke, and upper magnetic is gripped and is all connected to interior leading with lower yoke
The two ends of magnet are located between magnetic sheet and outer magnetic conductive board and respectively, interior magnetic conductive board, outer magnetic conductive board, upper magnetic are gripped and lower yoke is common
Space is surrounded, magnet is located in the space.
Preferably, the magnet is spliced to form by some pieces of rare-earth Nd-Fe-Bs, and toroidal magnet constitutes centrosymmetry system, in
Core field intensity is 800-900GS and magnetic field center is parallel with crystal growth direction in single crystal growing furnace, and magnetic induction line scope is completely covered
Solution in crucible.
Preferably, also there is the magnetic field device bracing frame, bracing frame to protrude from single crystal growing furnace and support magnet.
Preferably, the magnetic field device is placed on the outside of VGF single crystal growing furnaces, the outer furnace tube of VGF single crystal growing furnaces and magnetic field device
Interior magnetic conductive board contact.
VGF single crystal growth apparatus with melting zone complementary field device of the present invention, including VGF single crystal growing furnaces and above-mentioned
Magnetic field device, the outer furnace tube of the VGF single crystal growing furnaces are contacted with the interior magnetic conductive board of magnetic field device.
The magnetic field device of the present invention is not consumed energy using symmetrical permanent magnet field structure, non-maintaining, without noise pollution.Magnetic field fills
Put and be sheathed on the outside of single crystal growing furnace and contact with single crystal growing furnace, shorten the spacing of magnetic field device and single crystal growing furnace, be not only simple in structure,
Occupy little space, it is thus also avoided that the loss of magnetic field intensity, can provide intensity optimal magnetic field to single crystal growing furnace.The present invention has
The VGF single crystal growth apparatus of magnetic field device, due to the effect of magnetic field device, can effectively suppress the melt pair in single crystal growing furnace
Stream, and reduce solid liquid interface temperature fluctuation, improve crystal mass and crystal forming rate.
Description of the drawings
By being described to embodiment with reference to accompanying drawings below, the features described above and technological merit of the present invention will become
More clear and easy to understand.
Fig. 1 is the sectional view of the VGF single crystal growth apparatus with melting zone complementary field of the present invention.
Wherein 1：VGF monocrystalline bodies of heater；2：Upper magnet yoke；3：Outer magnetic conductive board；4：Magnet；5：Lower yoke；6：Interior magnetic conductive board；7：Earthenware
Crucible；8：Melt.
Specific embodiment
Below with reference to the accompanying drawings describing embodiment of the present invention.One of ordinary skill in the art may recognize that
Arrive, in the case of without departing from the spirit and scope of the present invention, can with a variety of modes or its combine to described
Embodiment is modified.Therefore, accompanying drawing and description are inherently illustrative, rather than for limiting the protection of claim
Scope.Additionally, in this manual, accompanying drawing is drawn not in scale, and identical reference represents identical part.
The present embodiment is described in detail with reference to Fig. 1.
The structure of the VGF monocrystal growing furnaces with melting zone complementary field device that the present invention is provided is as shown in figure 1, the magnetic
Field device is placed on the outside of single crystal growing furnace.The shape that magnetic field has included solid liquid interface gentle for the impact of crystal growing process, subtracts
Little thermal stress and the heterogeneity of microcosmic, increase the mixing of melt, interaction between melt and utensil etc..
VGF single crystal growing furnaces have VGF monocrystalline body of heater 1 and its internal crucible 7 and melt 8.
Magnetic field device is contacted with the body of heater of VGF single crystal growing furnaces.Magnetic field device includes magnet 4, interior magnetic conductive board 6, outer magnetic conductive board
3rd, upper magnetic grips 2 and lower yoke 5.Magnet 4 is generally annular.Interior magnetic conductive board 6, outer magnetic conductive board 3, upper magnetic grip 2 and lower yoke 5 altogether
With space is surrounded, magnet 4 is located in the space.Interior magnetic conductive board 6 is located at the lateral wall of body of heater and between magnet 4, and and body of heater
Lateral wall contact.Interior magnetic conductive board 6 is identical with the lateral wall shape of monocrystalline body of heater, is throughout face contact.Outer magnetic conductive board 3
It is located at side of the magnet 4 away from interior magnetic conductive board 6.Upper magnetic grip 2 and lower yoke 5 be between interior magnetic conductive board 6 and outer magnetic conductive board 3,
And it is located at the two ends of magnet 4 respectively.
The at present crucible total height used by growth indium phosphide single crystal is 200mm, is calculated with 4-5 kilogram of charge, magnet
Height should be not less than 400mm.Crucible is located at position on the upper side in the middle part of magnet, to ensure that solid liquid interface is located in the middle part of magnet, on crucible
Edge is 20-80mm with edge distance on magnet.
The fixed form of magnetic field device：Interior magnetic conductive board 6 is closely joined with VGF monocrystalline furnace outer walls using the method for screw or welding
Connect；Lower yoke 5 is coupled with bracing frame by screw；By screw between interior magnetic conductive board 6, outer magnetic conductive board 3, upper magnet yoke 2 and lower yoke 5
Fixed.
The magnet 4 is spliced to form by some pieces of rare-earth Nd-Fe-Bs, and toroidal magnet constitutes centrosymmetry system, central magnetic field
Intensity is 800-900GS and magnetic field center is parallel with crystal growth direction in single crystal growing furnace, and magnetic induction line scope is completely covered in crucible
Solution.
Should meet magnetic induction line melt is completely covered using the size of magnet, by selecting the permanent magnet and not of different model
Magnetic field intensity is controlled with magnet shape, it is ensured that magnetic induction line covers melt scope.
Also there is magnetic field device bracing frame (not shown), bracing frame to protrude from single crystal growing furnace and support magnet.
The magnetic field for being attached to melting zone that the present invention is adopted is produced by rare-earth permanent magnet, different from the electromagnetism that prior art is used
?.The advantage that magnetic field is produced using permanent magnet is stable magnetic field, is not affected by extraneous current/voltage change.Macrocyclic
The stability in magnetic field in melt can be kept in crystal growing process, be more beneficial for suppressing melt convection in long-time, kept solid
Liquid interface stability, is conducive to the stability and repeatability for improving monocrystalline growing process.
The preferred embodiments of the present invention are the foregoing is only, the present invention is not limited to, for those skilled in the art
For member, the present invention can have various modifications and variations.All any modifications that within the spirit and principles in the present invention, is made,
Equivalent, improvement etc., should be included within the scope of the present invention.
Claims (5)
1. a kind of melting zone complementary field device, it is characterised in that
The magnetic field device includes magnet and inside and outside magnetic conductive board, is sheathed on outside single crystal growing furnace using being centrosymmetrically arranged, in VGF
Magnetic field is produced in monocrystal growing furnace, and wherein interior magnetic conductive board is located between single crystal growing furnace and magnet, and is contacted with single crystal growing furnace and magnet,
Outer magnetic conductive board is located at side of the magnet away from interior magnetic conductive board.
2. complementary field device in melting zone according to claim 1, it is characterised in that
The magnetic field device also includes that magnetic is gripped and lower yoke, and upper magnetic is gripped and is all connected to interior magnetic conductive board and outer magnetic conduction with lower yoke
The two ends of magnet are located between plate and respectively, interior magnetic conductive board, outer magnetic conductive board, upper magnetic are gripped and lower yoke surrounds space, magnetic jointly
Body is located in the space.
3. complementary field device in melting zone according to claim 1, it is characterised in that
The magnet is spliced to form by some pieces of rare-earth Nd-Fe-Bs, and toroidal magnet constitutes centrosymmetry system, central magnetic field intensity
For 800-900GS and magnetic field center is parallel with crystal growth direction in single crystal growing furnace, magnetic induction line scope is completely covered molten in crucible
Liquid.
4. complementary field device in melting zone according to claim 1, it is characterised in that
Also there is the magnetic field device bracing frame, bracing frame to protrude from single crystal growing furnace and support magnet.
5. there is the VGF monocrystal growing furnaces of the arbitrary described melting zone complementary field device of claim 1-4, it is characterised in that
The magnetic field device is placed on the outside of VGF single crystal growing furnaces, and the outer furnace tube of VGF single crystal growing furnaces is connect with the interior magnetic conductive board of magnetic field device
Touch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611027330.5A CN106498487A (en) | 2016-11-17 | 2016-11-17 | Melting zone complementary field device and the VGF monocrystal growing furnaces with which |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611027330.5A CN106498487A (en) | 2016-11-17 | 2016-11-17 | Melting zone complementary field device and the VGF monocrystal growing furnaces with which |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106498487A true CN106498487A (en) | 2017-03-15 |
Family
ID=58327353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611027330.5A Pending CN106498487A (en) | 2016-11-17 | 2016-11-17 | Melting zone complementary field device and the VGF monocrystal growing furnaces with which |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106498487A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117822126A (en) * | 2024-03-02 | 2024-04-05 | 山东华特磁电科技股份有限公司 | Magnetic crystal pulling permanent magnet device |
| CN117822126B (en) * | 2024-03-02 | 2024-06-04 | 山东华特磁电科技股份有限公司 | Magnetic crystal pulling permanent magnet device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH107487A (en) * | 1996-06-20 | 1998-01-13 | Komatsu Electron Metals Co Ltd | Production of single semiconductor crystal by magnetic field impression |
| CN201106071Y (en) * | 2007-09-20 | 2008-08-27 | 西安理工大学 | Cusp magnetic field device of single-crystal furnace |
| CN201485534U (en) * | 2009-08-11 | 2010-05-26 | 嘉兴市中科光电科技有限公司 | Magnetic field device for preparing solar monocrystalline silicon |
| CN105696085A (en) * | 2014-11-24 | 2016-06-22 | 银川隆基硅材料有限公司 | Magnetic field device, and monocrystalline growth equipment provided with magnetic field device |
-
2016
- 2016-11-17 CN CN201611027330.5A patent/CN106498487A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH107487A (en) * | 1996-06-20 | 1998-01-13 | Komatsu Electron Metals Co Ltd | Production of single semiconductor crystal by magnetic field impression |
| CN201106071Y (en) * | 2007-09-20 | 2008-08-27 | 西安理工大学 | Cusp magnetic field device of single-crystal furnace |
| CN201485534U (en) * | 2009-08-11 | 2010-05-26 | 嘉兴市中科光电科技有限公司 | Magnetic field device for preparing solar monocrystalline silicon |
| CN105696085A (en) * | 2014-11-24 | 2016-06-22 | 银川隆基硅材料有限公司 | Magnetic field device, and monocrystalline growth equipment provided with magnetic field device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117822126A (en) * | 2024-03-02 | 2024-04-05 | 山东华特磁电科技股份有限公司 | Magnetic crystal pulling permanent magnet device |
| CN117822126B (en) * | 2024-03-02 | 2024-06-04 | 山东华特磁电科技股份有限公司 | Magnetic crystal pulling permanent magnet device |
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| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170410 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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| CB03 | Change of inventor or designer information |
Inventor after: Zhao Youwen Inventor after: Duan Manlong Inventor before: Yang Cuibai Inventor before: Zhao Youwen Inventor before: Fang Cong Inventor before: Wang Fenghua Inventor before: Dong Zhiyuan Inventor before: Gao Yongliang Inventor before: Wang Jun |
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Effective date of registration: 20170808 Address after: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant after: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant before: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. |
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Effective date of registration: 20170823 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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Application publication date: 20170315 |