CN105696085A - Magnetic field device, and monocrystalline growth equipment provided with magnetic field device - Google Patents
Magnetic field device, and monocrystalline growth equipment provided with magnetic field device Download PDFInfo
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- CN105696085A CN105696085A CN201410682106.4A CN201410682106A CN105696085A CN 105696085 A CN105696085 A CN 105696085A CN 201410682106 A CN201410682106 A CN 201410682106A CN 105696085 A CN105696085 A CN 105696085A
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- conductive board
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Abstract
The invention discloses a magnetic field device used for generating magnetic field in a monocrystal furnace. The monocrystal furnace is sleeved by the magnetic field device; the magnetic field device comprises a magnet and an internal magnetic conductive plate; the internal magnetic conductive plate is arranged between the monocrystal furnace and the magnet, and is contacted with the outer furnace barrel wall of the monocrystal furnace. The monocrystalline growth equipment provided with the magnetic field device comprises the magnetic field device, and the monocrystal furnace which is sleeved by the magnetic field device. The magnetic field device is simple in structure, and small in occupation space; distance between the magnetic field device and the monocrystal is reduced as far as possible, and magnetic field intensity loss is avoided, so that the optimal magnetic field can be provided for the monocrystal furnace; the monocrystalline growth equipment is capable of inhibiting molten convection in the monocrystal furnace effectively, reducing solid liquid interface temperature fluctuation, reducing oxygen content of crystals, reducing light induced degradation, and reducing occurrence probability of dark-core low efficiency wafers because of action of the magnetic field device.
Description
Technical field
The invention belongs to crystal growth equipment technical field, be specifically related to a kind of magnetic field device, further relate to a kind of single crystal growth apparatus with this magnetic field device。
Background technology
The competition of current photovoltaic industry is more and more fierce, and for obtaining higher conversion efficiency, monocrystalline silicon piece is proposed higher quality requirements by solaode manufacturer。By arranging magnetic field device outside single crystal growing furnace, it is possible to effectively suppress melt convection in pulling of silicon single crystal growth course, stablize solid liquid interface temperature, reduce the oxygen content in crystal, reduce the photo attenuation phenomenon of further battery sheet, reduce the generation probability of evil mind poor efficiency sheet。
A kind of magnetic field device being usually used in czochralski crystal growing furnace is made by support, occurs body to be arranged at around single crystal growing furnace in magnetic field with a determining deviation。On the one hand, this magnetic field device structure is complicated, occupy big quantity space；On the other hand, in actual application, magnetic field device is for the growth of monocrystalline and the impact of quality is limited, effect is undesirable。
Summary of the invention
It is an object of the invention to provide a kind of magnetic field device, solve the problem that space availability ratio is low and magnetic field effect is undesirable of the single crystal growth apparatus that prior art exists。
The present invention also aims to provide a kind of single crystal growth apparatus with this magnetic field device, due to the effect of magnetic field device, it is possible to effectively suppress the melt convection in single crystal growing furnace, and reduce solid liquid interface temperature fluctuation。
The technical solution adopted in the present invention is: magnetic field device, and for producing magnetic field in single crystal growing furnace, magnetic field device is sheathed on outside single crystal growing furnace, and magnetic field device includes magnet and interior magnetic conductive board, and interior magnetic conductive board is between single crystal growing furnace and magnet, and contacts with single crystal growing furnace。
The feature of the present invention also resides in:
Interior magnetic conductive board is fitted with the outer furnace tube wall of single crystal growing furnace and is contacted。
Magnetic field device has and takes unthreaded hole, takes unthreaded hole connection single crystal growing furnace and the magnetic field device opposite side away from single crystal growing furnace。
Magnetic field device also includes outer magnetic conductive board, and outer magnetic conductive board is positioned at the magnet side away from magnetic conductive board, takes unthreaded hole and sequentially passes through interior magnetic conductive board, magnet and outer magnetic conductive board。
Magnetic field device also includes magnetic and grips and lower yoke, upper magnetic is gripped and lower yoke is all connected between interior magnetic conductive board and outer magnetic conductive board and lays respectively at the two ends of magnet, interior magnetic conductive board, outer magnetic conductive board, upper magnetic are gripped and lower yoke encloses receiving space jointly, and magnet is positioned at receiving space。
Magnetic field device also has supporter, and supporter protrudes from single crystal growing furnace and supports magnet。
Another kind of technical scheme of the present invention is: have the single crystal growth apparatus of this magnetic field device, including single crystal growing furnace and above-mentioned magnetic field device。
The feature of the present invention also resides in:
Single crystal growing furnace has outer furnace tube wall, and interior magnetic conductive board is fitted with the outer furnace tube wall of single crystal growing furnace and contacted。
Single crystal growing furnace has through hole, magnetic field device have connection single crystal growing furnace and magnetic field device away from single crystal growing furnace side take unthreaded hole, take unthreaded hole and be connected with through hole。
Magnetic field device also includes outer magnetic conductive board, and outer magnetic conductive board is positioned at the magnet side away from magnetic conductive board, takes unthreaded hole and sequentially passes through interior magnetic conductive board, magnet and outer magnetic conductive board。
The invention has the beneficial effects as follows: magnetic field device provided by the invention is sheathed on outside single crystal growing furnace and contacts with single crystal growing furnace, it is not only simple in structure, occupies little space, also shorten the spacing of magnetic field device and single crystal growing furnace as much as possible, avoid the loss of magnetic field intensity, can provide intensity optimal magnetic field to single crystal growing furnace。The single crystal growth apparatus with this magnetic field device of the present invention, effect due to magnetic field device, it is possible to effectively suppress the melt convection in single crystal growing furnace, and reduce solid liquid interface temperature fluctuation, thus the oxygen content reduced in crystal reduce photo attenuation phenomenon, reduce the generation probability of evil mind poor efficiency sheet。
Accompanying drawing explanation
Fig. 1 is the structural representation of the single crystal growth apparatus with this magnetic field device of the present invention；
Fig. 2 is the sectional view of Fig. 1。
In figure, 10. there is the single crystal growth apparatus of this magnetic field device, 1. single crystal growing furnace, 11. inner furnace tube walls, 12. outer furnace tube walls, 13. cooling duct, 14. through holes, 2. magnetic field device, 21. magnets, magnetic conductive board in 22., 23. outer magnetic conductive board, 24. upper magnet yokes, 25. lower yokes, 26. take unthreaded hole, 27. gripper shoes。
Detailed description of the invention
Below in conjunction with detailed description of the invention, the present invention is described in detail。
The structure of the single crystal growth apparatus 10 with this magnetic field device provided by the invention as depicted in figs. 1 and 2, including single crystal growing furnace 1 and the magnetic field device 2 being sheathed on single crystal growing furnace 1。
Single crystal growing furnace 1 has furnace wall (not shown), and furnace wall includes the inner furnace tube wall 11 and the outer furnace tube wall 12 that are oppositely arranged。Preferably, between inner furnace tube wall 11 and outer furnace tube wall 12, there is cooling duct 13。Furnace wall also has the through hole 14 sequentially passing through inner furnace tube wall 11, cooling duct 13 and outer furnace tube wall 12。
Magnetic field device 2 contacts with the furnace wall of single crystal growing furnace 1。Magnetic field device 2 includes magnet 21, interior magnetic conductive board 22, outer magnetic conductive board 23, upper magnetic grip 24 and lower yoke 25。Magnet 21 is generally annular。Interior magnetic conductive board 22, outer magnetic conductive board 23, upper magnetic grip 24 and lower yoke 25 jointly enclose receiving space (not shown), magnet 21 is positioned at receiving space。Interior magnetic conductive board 22 is between the outer furnace tube wall 12 and magnet 21 of furnace wall, and contacts with the outer furnace tube wall 12 of furnace wall。Specifically, interior magnetic conductive board 22 is fitted with the outer furnace tube wall of single crystal growing furnace 1 and is contacted, i.e. interior magnetic conductive board 22 is identical with the outer furnace tube wall shape of single crystal growing furnace 1, is face contact throughout。Outer magnetic conductive board 23 is positioned at the magnet 21 side away from magnetic conductive board 22。Upper magnetic grip 24 and lower yoke 25 be all connected between interior magnetic conductive board 22 and outer magnetic conductive board 23, and lay respectively at the two ends of magnet 21。Magnetic field device 2 also includes taking unthreaded hole 26 and supporter 27。Take unthreaded hole 26 and connect single crystal growing furnace 1 and magnetic field device 2 opposite side away from single crystal growing furnace 1, specifically, take unthreaded hole 26 and sequentially pass through interior magnetic conductive board 22, magnet 21 and outer magnetic conductive board 23, and be connected with the through hole 14 of furnace wall。Supporter 27 is located close to one end of the bottom of single crystal growing furnace 1, and supporter 27 protrudes from the furnace wall of single crystal growing furnace 1 and supports magnet 21。
The magnetic field device 2 of the present invention is sheathed on outside single crystal growing furnace 1 and contacts with the furnace wall of single crystal growing furnace 1, it is not only simple in structure, occupies little space, also shorten the spacing of magnetic field device 2 and single crystal growing furnace 1 as much as possible, it is to avoid the loss of magnetic field intensity, can provide intensity optimal magnetic field to single crystal growing furnace。The single crystal growth apparatus 10 with this magnetic field device of the present invention, effect due to magnetic field device 2, can effectively suppress the melt convection in single crystal growing furnace 1, and reduce solid liquid interface temperature fluctuation, thus the oxygen content reduced in crystal reduce photo attenuation phenomenon, reduce the generation probability of evil mind poor efficiency sheet。
Claims (10)
1. magnetic field device, for producing magnetic field in single crystal growing furnace (1), described magnetic field device is sheathed on described single crystal growing furnace (1) outward, it is characterized in that: described magnetic field device includes magnet (21) and interior magnetic conductive board (22), described interior magnetic conductive board (22) is positioned between described single crystal growing furnace (1) and magnet (21), and contacts with the outer furnace tube wall of single crystal growing furnace (1)。
2. magnetic field device as claimed in claim 1, it is characterised in that described interior magnetic conductive board (22) is fitted with the outer furnace tube wall of single crystal growing furnace (1) and contacted。
3. magnetic field device as claimed in claim 2, it is characterized in that, described magnetic field device has and takes unthreaded hole (26), described in take unthreaded hole (26) and connect described single crystal growing furnace (1) and the described magnetic field device opposite side away from described single crystal growing furnace (1)。
4. magnetic field device as claimed in claim 3, it is characterized in that, described magnetic field device also includes outer magnetic conductive board (23), described outer magnetic conductive board (23) is positioned at the described magnet (21) side away from described magnetic conductive board (22), described in take unthreaded hole (26) and sequentially pass through described outer magnetic conductive board (23), magnet (21) and interior magnetic conductive board (22)。
5. magnetic field device as claimed in claim 4, it is characterized in that, described magnetic field device also includes upper magnet yoke (24) and lower yoke (25), described upper magnet yoke (24) and lower yoke (25) are all connected between described interior magnetic conductive board (22) and outer magnetic conductive board (23) and lay respectively at the two ends of described magnet (21), described interior magnetic conductive board (22), outer magnetic conductive board (23), upper magnet yoke (24) and lower yoke (25) enclose a receiving space jointly, and described magnet (21) is positioned at described receiving space。
6. magnetic field device as claimed in claim 5, it is characterised in that described magnetic field device also includes supporter (27), and described supporter (27) protrudes from single crystal growing furnace (1) and supports described magnet (21)。
7. there is the single crystal growth apparatus of this magnetic field device, it is characterised in that include single crystal growing furnace (1) and the magnetic field device as described in any one of claim 1-6。
8. single crystal growth apparatus as claimed in claim 7, it is characterized in that, described single crystal growing furnace (1) has outer furnace tube wall (12), and described interior magnetic conductive board (22) is fitted with the outer furnace tube wall (12) of single crystal growing furnace (1) and contacted。
9. single crystal growth apparatus as claimed in claim 7, it is characterized in that, described single crystal growing furnace (1) has through hole (14), described magnetic field device has and connects described single crystal growing furnace (1) and described magnetic field device takes unthreaded hole (26) away from described single crystal growing furnace (1) side, described in take unthreaded hole (26) and be connected with described through hole (14)。
10. single crystal growth apparatus as claimed in claim 9, it is characterized in that, described magnetic field device also includes outer magnetic conductive board (23), described outer magnetic conductive board (23) is positioned at the described magnet (21) side away from described magnetic conductive board (22), described in take unthreaded hole (26) and sequentially pass through described interior magnetic conductive board (22), magnet (21) and outer magnetic conductive board (23)。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410682106.4A CN105696085A (en) | 2014-11-24 | 2014-11-24 | Magnetic field device, and monocrystalline growth equipment provided with magnetic field device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410682106.4A CN105696085A (en) | 2014-11-24 | 2014-11-24 | Magnetic field device, and monocrystalline growth equipment provided with magnetic field device |
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| CN105696085A true CN105696085A (en) | 2016-06-22 |
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| CN201410682106.4A Pending CN105696085A (en) | 2014-11-24 | 2014-11-24 | Magnetic field device, and monocrystalline growth equipment provided with magnetic field device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106498487A (en) * | 2016-11-17 | 2017-03-15 | 北京鼎泰芯源科技发展有限公司 | Melting zone complementary field device and the VGF monocrystal growing furnaces with which |
| CN107887471A (en) * | 2017-09-29 | 2018-04-06 | 苏州润阳光伏科技有限公司 | The method for reducing p-type solar cell photo attenuation |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106498487A (en) * | 2016-11-17 | 2017-03-15 | 北京鼎泰芯源科技发展有限公司 | Melting zone complementary field device and the VGF monocrystal growing furnaces with which |
| CN107887471A (en) * | 2017-09-29 | 2018-04-06 | 苏州润阳光伏科技有限公司 | The method for reducing p-type solar cell photo attenuation |
| CN107887471B (en) * | 2017-09-29 | 2019-05-21 | 苏州润阳光伏科技有限公司 | The method for reducing p-type solar cell photo attenuation |
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Application publication date: 20160622 |
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