CN106498398A - Metal etch liquid and its engraving method for copper/molybdenum film layer - Google Patents
Metal etch liquid and its engraving method for copper/molybdenum film layer Download PDFInfo
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- CN106498398A CN106498398A CN201611093164.9A CN201611093164A CN106498398A CN 106498398 A CN106498398 A CN 106498398A CN 201611093164 A CN201611093164 A CN 201611093164A CN 106498398 A CN106498398 A CN 106498398A
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- China
- Prior art keywords
- metal etch
- etch liquid
- copper
- film layer
- molybdenum film
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention belongs to liquid crystal panel processing technique field, in particular discloses a kind of metal etch liquid for copper/molybdenum film layer, the metal etch liquid includes organic acid, phosphate and hydrogen peroxide, and the pH of metal etch liquid is less than 6.In the metal etch liquid, each component can play multiple action, and so as to other etching solutions in compared to existing technology, composition are more simple, use range is wider；Meanwhile, according to floride-free in the metal etch liquid of the present invention, environmentally friendly, do not result in the damage of the special materials such as the substrate and IGZO of the materials such as glass.In addition, the homogeneity according to the metal etch liquid of the present invention is good, the critical size such as cone angle formed in etching process is controlled.Present invention also offers a kind of engraving method based on above-mentioned metal etch liquid when copper/molybdenum film layer is processed.
Description
Technical field
The invention belongs to liquid crystal panel processing technique field, it relates in particular in a kind of liquid crystal panel, it is used for copper/molybdenum film
The metal etch liquid and its engraving method of layer.
Background technology
The production technology of liquid crystal panel generally comprise cleaning-film forming (generally physical vapour deposition (PVD)/chemical vapor deposition)-
The series of process such as exposure-development-etching (generally wet etching/dry etching)-stripping-inspection.Wherein wet etching
Effect has a great impact for the fine degree of wiring and the quality of final liquid crystal panel.
The material of the metal line in traditional liquid crystal indicator mostly is aluminum or aluminium alloy, corresponding metal etch
Liquid is generally the mixture of mineral acid.With the development of Display Technique, especially towards maximization and the development of high resolution
In, traditional plain conductor can be caused to show with elongated, the increase of resistance of wiring, the problems such as so as to amplify signal delay
The degeneration of effect.The lower metal line of resistance with copper etc. as material arises at the historic moment, correspondingly, it is also desirable to new metal erosion
Carve liquid.
Traditional metal etch liquid often be multicomponent system, by taking dioxygen water system etching solution as an example, typically have oxidant/
PH stabilizers/chelating agent or chelating agen/surfactant and other etc..Reagent composition species is more, and composition is complex, accordingly
Ground, cost of material is higher, and preparation process is more loaded down with trivial details.
Although also there is now the metal etch liquid suitable for thin copper film of development newly developed, still there is complicated component,
And cause problem relatively costly, that preparation is loaded down with trivial details.
Content of the invention
For solving the problems, such as above-mentioned prior art, the invention provides a kind of metal etch for copper/molybdenum film layer
Liquid and its engraving method, the metal etch liquid composition are simple, simplify preparing process, and reduce preparation cost.
In order to reach foregoing invention purpose, following technical scheme is present invention employs：
A kind of metal etch liquid for copper/molybdenum film layer, including organic acid, phosphate and hydrogen peroxide；The metal erosion
The pH for carving liquid is less than 6.
Further, in the metal etch liquid, the mass percent of the organic acid is 4%～8%, the phosphoric acid
The mass percent of salt is 10%～20%, and the mass percent of the hydrogen peroxide is 10%～15%；Balance of water.
Further, the organic acid is not fluorine-containing organic acid.
Further, at least one of the organic acid in acetic acid, ethanedioic acid, malonic acid, citric acid, aminoacid.
Further, the phosphate includes at least one in dihydric phosphate and hydrophosphate.
Further, the dihydric phosphate is sodium dihydrogen phosphate；The hydrophosphate is disodium hydrogen phosphate.
Further, the pH of the metal etch liquid is 3～5.
Another object of the present invention is also resided in and provides a kind of engraving method of copper/molybdenum film layer, including step：By the copper/
Molybdenum film layer is contacted with as above arbitrary described metal etch liquid.
Further, the temperature that the copper/molybdenum film layer is contacted with the metal etch liquid is 30 DEG C～35 DEG C.
The present invention obtains the metal erosion of copper/molybdenum film layer by preparing the mixing of organic acid, phosphate and hydrogen peroxide
Carve liquid, in the metal etch liquid, each component can play multiple action, such as organic acid therein not only provide hydrogen from
Son, also can be used as the chelating agen of copper ion, so that the composition of the metal etch liquid is relatively simple, use range is wider；With
When, floride-free in the metal etch liquid of the present invention, environmentally friendly, do not result in substrate and IGZO (the indium gallium zinc of the materials such as glass
Oxide) etc. special material damage.In addition, the homogeneity according to the metal etch liquid of the present invention is good, shape in etching process
Into the critical size such as cone angle control.
Description of the drawings
By combining the following description that accompanying drawing is carried out, above and other aspect of embodiments of the invention, feature and advantage
Will become clearer from, in accompanying drawing：
Fig. 1 is the copper/molybdenum film layer sectional view when metal etch liquid of embodiments in accordance with the present invention 3 is etched.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to describing embodiments of the invention in detail.However, it is possible to come in many different forms real
Apply the present invention, and the present invention should not be construed as limited to the specific embodiment that illustrates here.On the contrary, there is provided these enforcements
Example is the principle and its practical application in order to explain the present invention, so that others skilled in the art are it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.In the accompanying drawings, for the sake of clarity, element can be exaggerated
Shape and size, and identical label will be used to indicate same or analogous element all the time.
The invention provides a kind of metal etch liquid for copper/molybdenum film layer, the metal etch liquid includes：Organic acid, phosphorus
Hydrochlorate and hydrogen peroxide.
The pH of the metal etch liquid damages other to prevent too low pH from causing acidity excessive in use less than 6
Film layer and too high pH can cause the hydrogen peroxide in the metal etch liquid to decompose.
Preferably, the pH of the metal etch liquid is 3～5.
Specifically, in the metal etch liquid, the mass percent of organic acid is 4%～8%, phosphatic quality percentage
Number is 10%～20%, and the mass percent of hydrogen peroxide is 10%～15%；Balance of water.
More, organic acid is not fluorine-containing organic acid, such as in acetic acid, ethanedioic acid, malonic acid, citric acid, aminoacid etc.
At least one；Phosphate includes at least one in dihydric phosphate and hydrophosphate, dihydric phosphate such as sodium dihydrogen phosphate,
Hydrophosphate such as disodium hydrogen phosphate.
The invention also discloses method copper/molybdenum film layer being etched using above-mentioned metal etch liquid, including step：Will
Copper/molybdenum film layer is contacted with as above arbitrary described metal etch liquid.
Etching preferable temperature is 30 DEG C～35 DEG C；That is, by copper/molybdenum film layer with metal etch liquid at 30 DEG C～35 DEG C
Lower contact.
Hereinafter, by with reference to specific embodiment to according to the present invention the metal etch liquid for copper/molybdenum film layer carry out in detail
Thin description, for convenience of contrasting to each embodiment, the metal erosion in comparative example 1 and embodiment 2 in table form
The composition of liquid is carved, as shown in table 1.
The metal etch liquid composition of 1 embodiments in accordance with the present invention 1-2 of table
From table 1 it follows that the composition according to the metal etch liquid for copper/molybdenum film layer of the present invention is simple, with letter
, into correspondingly, its preparing process is inevitable more simple and preparation cost is lower for single group.
Hereinafter, will be illustrated by specific embodiment according to the metal etch liquid for copper/molybdenum film layer of the invention
Engraving method.
Embodiment 3
Present embodiments provide etching of the metal etch liquid as described in above-mentioned embodiment 1,2 when copper/molybdenum film layer is processed
Method, will copper/molybdenum film layer contact with above-mentioned metal etch liquid phase.
Specifically, the device with copper/molybdenum film layer is contacted with the metal etch liquid, such as this there can be copper/molybdenum
The device of film layer is dipped in metal etch liquid.
Above-mentioned etching process is preferably carried out at 30 DEG C～35 DEG C.
With reference to Fig. 1, the device include substrate 1 and on substrate 1 successively lamination be provided with barrier film 21, thin copper film 22,
22 combination of resist layer 3, wherein barrier film 21 and wiring is the copper/molybdenum film layer described in embodiments of the invention.
What deserves to be explained is, good metal etch liquid should make the scope that the wiring cross sectional shape after etching is regulation
Interior, etched after good wiring cross sectional shape；In general, following both sides should be met to require：(1) 22 are connected up
Angle (cone angle) α that the plane that the substrate 1 of the etching face of end and lower floor is located is formed is 30 °～60 ° of positive taper；(2) from
3 end of resist layer play be arranged on wiring 22 under barrier film 21 contact to the end of substrate 1 apart from a (CD damage
Lose) for less than 1.2 μm, preferably less than 1 μm.
Based on the above-mentioned requirement to metal etch liquid, respectively using two kinds of metal etch in embodiment 1 and embodiment 2
Liquid；Through overetch, the metal etch liquid energy in embodiment 1 enough forms 29.31 ° of cone angle, and CD losses are 959.37nm；And it is real
Apply the metal etch liquid energy in example 2 and enough form 33.11 °, and CD losses are 900nm.
It can thus be seen that the etch effect according to the metal etch liquid for copper/molybdenum film layer of the present invention is good, with
When, the engraving method of the metal etch liquid is simple, it is easy to operate.
Although the present invention is illustrated and described with reference to specific embodiment, it should be appreciated by those skilled in the art that：
In the case of without departing from the spirit and scope of the present invention limited by claim and its equivalent, can here carry out form and
Various change in details.
Claims (9)
1. a kind of metal etch liquid for copper/molybdenum film layer, it is characterised in that including organic acid, phosphate and hydrogen peroxide；Institute
The pH for stating metal etch liquid is less than 6.
2. metal etch liquid according to claim 1, it is characterised in that in the metal etch liquid, the organic acid
Mass percent be 4%～8%, the phosphatic mass percent be 10%～20%, the quality of the hydrogen peroxide
Percent is 10%～15%；Balance of water.
3. metal etch liquid according to claim 1 and 2, it is characterised in that the organic acid is not fluorine-containing organic acid.
4. metal etch liquid according to claim 3, it is characterised in that the organic acid selected from acetic acid, ethanedioic acid, the third two
Acid, citric acid, at least one in aminoacid.
5. metal etch liquid according to claim 1 and 2, it is characterised in that the phosphate include dihydric phosphate and
At least one in hydrophosphate.
6. metal etch liquid according to claim 5, it is characterised in that the dihydric phosphate is sodium dihydrogen phosphate；Institute
Hydrophosphate is stated for disodium hydrogen phosphate.
7. metal etch liquid according to claim 1 and 2, it is characterised in that the pH of the metal etch liquid is 3～5.
8. the engraving method of a kind of copper/molybdenum film layer, it is characterised in that including step：By the copper/molybdenum film layer and such as claim
The arbitrary described metal etch liquid contacts of 1-7.
9. engraving method according to claim 8, it is characterised in that the copper/molybdenum film layer is connect with the metal etch liquid
Tactile temperature is 30 DEG C～35 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611093164.9A CN106498398A (en) | 2016-12-01 | 2016-12-01 | Metal etch liquid and its engraving method for copper/molybdenum film layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611093164.9A CN106498398A (en) | 2016-12-01 | 2016-12-01 | Metal etch liquid and its engraving method for copper/molybdenum film layer |
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| Publication Number | Publication Date |
|---|---|
| CN106498398A true CN106498398A (en) | 2017-03-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611093164.9A Pending CN106498398A (en) | 2016-12-01 | 2016-12-01 | Metal etch liquid and its engraving method for copper/molybdenum film layer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107564809A (en) * | 2017-08-04 | 2018-01-09 | 深圳市华星光电半导体显示技术有限公司 | The etching solution and its engraving method of IGZO film layers |
| CN109778190A (en) * | 2017-11-10 | 2019-05-21 | 深圳市华星光电技术有限公司 | A kind of Cu-MoTi etching solution |
| WO2020015078A1 (en) * | 2018-07-19 | 2020-01-23 | 深圳市华星光电半导体显示技术有限公司 | Copper/molybdenum etching solution composition and application thereof |
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| CN1417383A (en) * | 2000-12-20 | 2003-05-14 | Lg.菲利浦Lcd株式会社 | Etchant and substrate with etched copper wire array |
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| WO2013025003A3 (en) * | 2011-08-18 | 2013-04-11 | 주식회사 이엔에프테크놀로지 | Method for etching copper/molybdenum alloy film with increased etching capacity of etchant |
| CN103052907A (en) * | 2010-07-30 | 2013-04-17 | 东友Fine-Chem股份有限公司 | Method for preparing array substrate for liquid crystal display device |
| KR20160064013A (en) * | 2014-11-27 | 2016-06-07 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | Liquid composition and etching process using same |
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| CN1417383A (en) * | 2000-12-20 | 2003-05-14 | Lg.菲利浦Lcd株式会社 | Etchant and substrate with etched copper wire array |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107564809A (en) * | 2017-08-04 | 2018-01-09 | 深圳市华星光电半导体显示技术有限公司 | The etching solution and its engraving method of IGZO film layers |
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| CN109778190A (en) * | 2017-11-10 | 2019-05-21 | 深圳市华星光电技术有限公司 | A kind of Cu-MoTi etching solution |
| WO2020015078A1 (en) * | 2018-07-19 | 2020-01-23 | 深圳市华星光电半导体显示技术有限公司 | Copper/molybdenum etching solution composition and application thereof |
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Application publication date: 20170315 |
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