CN109778190A - A kind of Cu-MoTi etching solution - Google Patents
A kind of Cu-MoTi etching solution Download PDFInfo
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- CN109778190A CN109778190A CN201711104710.9A CN201711104710A CN109778190A CN 109778190 A CN109778190 A CN 109778190A CN 201711104710 A CN201711104710 A CN 201711104710A CN 109778190 A CN109778190 A CN 109778190A
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- Prior art keywords
- acid
- etching solution
- moti
- moti etching
- oxidant
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Invention provides a kind of Cu-MoTi etching solution, includes: 5~30wt% oxidant, 3~15wt% acid and 3~15wt% inorganic salts, surplus are deionized water；Wherein, the oxidant is selected from the group being made of hydrogen peroxide and persulfuric acid；The acid selects the group of free polycarboxylic acid, amino acid and inorganic acid composition；And the inorganic salts are selected from the group being made of diammonium hydrogen phosphate and ammonium dihydrogen phosphate.
Description
Technical field
The present invention relates to etching solution field, in particular to a kind of Cu-MoTi etching solution.
Background technique
In the production process of TFT-LCD, metal electrode generally is formed in the anti-method of chemical etching.Specifically, first
The photoresist of layer on surface of metal is patterned to define photoresist layer, is then eroded not by chemicals by the photoresist layer
The region of protection, then the photoresist layer is removed, complete the patterning process of metal layer.Common plain conductor is generally by multilayer
Composition of alloy, such as copper/molybdenum (Cu-Ti), copper/molybdenum-titanium alloy (Cu-MoTi), copper/titanium (Cu-Ti) structure.
Wherein, it is conventionally used to copper/molybdenum-titanium alloy etching solution and contains F ion.For example, Chinese patent " molybdenum alloy film and
The etchant of indium oxidation film " (publication number: CN103890234A) discloses a kind of on TFT-LCD pixel electrode
The etchant of the multiple film of molybdenum alloy film, indium oxidation film or molybdenum alloy film and indium oxidation film.The etchant
Include based on entire combination object total weight: hydrogen peroxide, 0.1%~2% weight percent of 5%~25% weight percent
Corrosion inhibitor, the perfluorochemical of 0.1%~2% weight percent, 0.1%~2% weight percent perchloro- compound,
The hydrogen peroxide stabilizer of 0.1%~5% weight percent and the water for making the weight percent of entire combination object reach 100%.Though
So the content of F ion is lower in the etching solution, but injury of such etching solution to glass and oxide semiconductor (IGZO)
Degree is very big, limits the exploitation of IGZO in the number of heavy industry processing procedure in metal layer patterning processing procedure and BCE structure.
It would therefore be desirable to a kind of new Cu-MoTi etching solution, with solve presently, there are the technical issues of.
Summary of the invention
The purpose of the present invention is to provide a kind of Cu-MoTi etching solution, the Cu-MoTi etching solution does not contain F ion, with
Injury of the etching solution to glass and IGZO is avoided, to expand the application range of metal layer patterning processing procedure.
In order to achieve the above object, present invention firstly provides a kind of Cu-MoTi etching solution, include: 5~30wt% oxidation
Agent, 3~15wt% acid and 3~15wt% inorganic salts, surplus are deionized water.
In a preferred embodiment, the Cu-MoTi etching solution includes 8~12wt% oxidant.
In a preferred embodiment, the Cu-MoTi etching solution includes 5~10wt% acid.
In a preferred embodiment, the Cu-MoTi etching solution includes 5~10wt% inorganic salts.
In an embodiment of the present invention, compound of the oxidant containing peroxy-radical.Preferably, described to contain peroxy-radical
Compound be hydrogen peroxide and its derivative, such as, but not limited to hydrogen peroxide and persulfuric acid.
In an embodiment of the present invention, the acid selects the group of free polycarboxylic acid, amino acid and inorganic acid composition.It is preferred that
Ground, the acid are polybasic carboxylic acid.
In an embodiment of the present invention, the inorganic salts are selected from ammonium phosphate salt.Preferably, described to be selected from ammonium phosphate salt
Including diammonium hydrogen phosphate, ammonium dihydrogen phosphate and ammonium phosphate.Also, it is further preferable that the ammonium phosphate salt is monophosphate monophosphate hydrogen two
Ammonium or ammonium dihydrogen phosphate.
In a preferred embodiment, the polybasic carboxylic acid includes but is not limited to malic acid and citric acid, the ammonia
Base acid includes but is not limited to glycine and alanine, and the inorganic acid includes but is not limited to phosphoric acid and sulfuric acid.
In a preferred embodiment of the present invention, the oxidant that the Cu-MoTi etching solution is included is preferably peroxide
Change hydrogen.
In a preferred embodiment of the present invention, the acid that the Cu-MoTi etching solution is included is preferably citric acid.
In a preferred embodiment of the present invention, a kind of Cu-MoTi etching solution is provided, includes: 5~30wt% oxidant, 3~
15wt% polybasic carboxylic acid and 3~15wt% inorganic salts, surplus are deionized water；Wherein the oxidant is hydrogen peroxide；It is described
Polybasic carboxylic acid is citric acid；The inorganic salts are diammonium hydrogen phosphate or ammonium dihydrogen phosphate.
In a preferred embodiment of the present invention, the Cu-MoTi etching solution includes 8~12wt% oxidant, wherein described
Oxidant is selected from the group being made of hydrogen peroxide and persulfuric acid.It is highly preferred that the oxidant is hydrogen peroxide.
In a preferred embodiment of the present invention, the Cu-MoTi etching solution includes 5~10wt% polybasic carboxylic acid.More there is choosing
Ground, the polybasic carboxylic acid are citric acid.
In a preferred embodiment of the present invention, the Cu-MoTi etching solution includes 5~10wt% inorganic salts, wherein described
Inorganic salts are diammonium hydrogen phosphate or ammonium dihydrogen phosphate.
In a preferred embodiment of the present invention, a kind of Cu-MoTi etching solution is provided, includes: 8~12wt% hydrogen peroxide, 5
~10wt% polybasic carboxylic acid and 5~10wt% inorganic salts, surplus are deionized water；Wherein the polybasic carboxylic acid is malic acid or lemon
Lemon acid；The inorganic salts are diammonium hydrogen phosphate or ammonium dihydrogen phosphate.
In a preferred embodiment of the present invention, a kind of Cu-MoTi etching solution is provided, includes: 8~12wt% oxidant, 5~
10wt% polybasic carboxylic acid and 5~10wt% inorganic salts, surplus are deionized water；Wherein the oxidant is hydrogen peroxide；It is described
Polybasic carboxylic acid is citric acid；The inorganic salts are diammonium hydrogen phosphate or ammonium dihydrogen phosphate.
In an embodiment of the present invention, the Cu-MoTi etching solution also includes 0.01~5wt% metal-chelator, described
Metal-chelator includes aminocarboxylic chelants, hydroxycarboxylic acid chelator, tartaric acid, Quadrafos chelating agent and polycarboxylic acids chelating
Agent.
In an embodiment of the present invention, the metal-chelator include ethylenediamine tetra-acetic acid, hydroxyethylethylene diamine tri-acetic acid,
Polyacrylic acid and polymethylacrylic acid.
In an embodiment of the present invention, the Cu-MoTi etching solution also includes 0.01~5wt% stabilizer.
In an embodiment of the present invention, the stabilizer is phenylurea.
Verified, when concentration of hydrogen peroxide is lower than 5wt%, the Cu-MoTi etching solution service life is shorter, is not suitable for work
Industry production；And when hydrogen peroxide concentration is higher than 30wt%, the Cu-MoTi etching solution degree of danger increases, and is unfavorable for production peace
Entirely.
When needing to handle more glass substrate, the gold can be added in Cu-MoTi etching solution of the present invention
Belong to chelating agent and/or the stabilizer.
In the present invention, by the reasonable selection and reasonable volume of oxidant, polybasic carboxylic acid and inorganic salts, so that each component
Between act synergistically, and then obtain that a kind of preparation method is simple, manufacturing cost is cheap, have no toxic side effect and does not damage glass
And the Cu-MoTi etching solution of IGZO.The Cu-MoTi etching solution can replace existing liquid containing F etch, avoid existing etching solution
Injury to glass and IGZO, to expand the application range of metal layer patterning processing procedure.
Detailed description of the invention
Figure 1A and Figure 1B is the etch effect microscopy figure of Cu-MoTi etching solution described in embodiment 8 respectively.
Specific embodiment
Hereinafter, technology of the invention is described in detail in conjunction with specific embodiment.It is appreciated that the various following tool
Body embodiment is only used for helping skilled in the art to understand the present invention, rather than limitation of the present invention.
Embodiment 1.Cu-MoTi etching solution
In the present embodiment, a kind of Cu-MoTi etching solution is provided, includes: 5~30wt% oxidant, 3~15wt% acid and
3~15wt% inorganic salts, surplus are water.
The selection of 2. oxidant of embodiment and dosage optimization
In the present embodiment, applicant optimizes firstly for the selection of oxidant and dosage.In view of etching work procedure
Cost control and degree of danger control, applicant selected hydrogen peroxide and persulfuric acid as oxidant.
The experiment proved that: when the concentration of oxidant is lower than 5%, the Cu-MoTi etching solution service life of acquisition is shorter；And work as oxygen
When the concentration of agent is higher than 30%, the Cu-MoTi etching solution obtained the security risk high there are operational danger.Therefore, in this reality
It applies in example, applicant have determined that the concentration range of oxidant is 5~30%.Also, comprehensively consider etch effect and manufacture at
In the case where this, determine that the oxidant selects hydrogen peroxide, dosage is 8~12%.
The selection of 3. acid of embodiment and dosage optimization
In the present embodiment, applicant optimizes the selection of acid and dosage.In view of the cost control of etching work procedure
The control of system and degree of danger, applicant have chosen polybasic carboxylic acid, amino acid or inorganic acid and lose as Cu-MoTi of the present invention
Carve the component of liquid.After comprehensively considering safety and cost, determine that acid that Cu-MoTi etching solution of the present invention is included can be with
For the mixing of one or more of malic acid, citric acid, phosphoric acid, sulfuric acid or glycine.
The experiment proved that citric acid can provide good acidic environment for etch process, while also having both highly-safe
With advantage at low cost.
In the case where comprehensively considering etch effect and manufacturing cost, determine that the concentration range of citric acid is 3~15%, it is excellent
Select 5~10%.
The selection of 4. inorganic salts of embodiment and dosage optimization
In the present embodiment, applicant optimizes the selection of inorganic salts and dosage.The inorganic salts are in the present invention
Play the role of buffer in the Cu-MoTi etching solution.After comprehensively considering safety and cost, determine of the present invention
The inorganic salts that Cu-MoTi etching solution is included select ammonium phosphate salt, and the ammonium phosphate salt includes diammonium hydrogen phosphate, ammonium dihydrogen phosphate
And ammonium phosphate.In the case where comprehensively considering safety and manufacturing cost, determine that the inorganic salts are diammonium hydrogen phosphate or phosphoric acid
Ammonium dihydrogen, concentration range are 3~15%, preferably 5~10%.
The Cu-MoTi etching solution A that embodiment 5. optimizes
In the present embodiment, a kind of optimized Cu-MoTi etching solution A is provided, includes: 8~12wt% hydrogen peroxide, 5
~10wt% citric acid and 5~10wt% diammonium hydrogen phosphate, surplus are deionized water.Above-mentioned raw materials are uniformly mixed to get institute
State Cu-MoTi etching solution.
The Cu-MoTi etching solution B that embodiment 6. optimizes
In the present embodiment, a kind of optimized Cu-MoTi etching solution B is provided, includes: 8~12wt% hydrogen peroxide, 5
~10wt% citric acid, 5~10wt% diammonium hydrogen phosphate and 0.01~5wt% phenylurea, wherein the phenylurea is as stabilization
Agent.The Cu-MoTi etching solution B can be used for the etch process of more pieces of glass substrates.
The Cu-MoTi etching solution C that embodiment 7. optimizes
In the present embodiment, a kind of optimized Cu-MoTi etching solution C is provided, includes: 8~12wt% hydrogen peroxide, 5
~10wt% citric acid, 5~10wt% diammonium hydrogen phosphate and 0.01~5wt% metal-chelator, the metal-chelator are selected from
The group being made of aminocarboxylic chelants, hydroxycarboxylic acid chelator, tartaric acid, Quadrafos chelating agent and polycarboxylate chelating agent
Group.The Cu-MoTi etching solution C can be used for the etch process of more pieces of glass substrates.
Embodiment 8. verifies embodiment
In the present embodiment, a kind of Cu-MoTi etching solution is provided, is prepared as follows: weighing 4.8g citric acid, 13.2g
The hydrogen peroxide that diammonium hydrogen phosphate, 0.3g phenylurea and 200ml mass fraction are 10%.By above-mentioned raw materials be uniformly mixed to get
The Cu-MoTi etching solution.
The Cu-MoTi etching solution is applied to the etching of Cu-MoTi, obtains microscopy figure as shown in FIG. 1A and 1B.
As shown in Figure 1A, the gradient angular shape of the Cu-MoTi conducting wire after etching is intact, and about 30 °.And as shown in Figure 1B, it is described
The top surface of Cu-MoTi conducting wire is remained without molybdenum.
The present invention is described by above-mentioned related embodiment, however above-described embodiment is only to implement example of the invention.
It must be noted that, it has been disclosed that embodiment be not limiting as the scope of the present invention.On the contrary, being contained in the spirit of claims
And range modification and impartial setting be included in the scope of the present invention.
Claims (10)
1. a kind of Cu-MoTi etching solution, includes: 5~30wt% oxidant, 3~15wt% acid and 3~15wt% inorganic salts, it is remaining
Amount is deionized water；Wherein, the oxidant is selected from the compound containing peroxy-radical, and the inorganic salts are selected from ammonium phosphate salt.
2. Cu-MoTi etching solution as described in claim 1, which is characterized in that the compound containing peroxy-radical is peroxide
Change hydrogen and its derivative.
3. Cu-MoTi etching solution as described in claim 1, which is characterized in that the ammonium phosphate salt includes ammonium dihydrogen phosphate, phosphorus
Sour hydrogen diammonium and ammonium phosphate.
4. Cu-MoTi etching solution as claimed in claim 1 or 2, which is characterized in that the acid includes polybasic carboxylic acid, amino acid
And inorganic acid.
5. Cu-MoTi etching solution as claimed in claim 4, which is characterized in that the acid is polybasic carboxylic acid.
6. Cu-MoTi etching solution as claimed in claim 5, which is characterized in that the polybasic carboxylic acid includes malic acid and lemon
Acid, the amino acid include glycine and alanine, and the inorganic acid includes phosphoric acid and sulfuric acid.
7. Cu-MoTi etching solution as described in claim 1, which is characterized in that the Cu-MoTi etching solution also includes 0.01~
5wt% metal-chelator, the metal-chelator include aminocarboxylic chelants, hydroxycarboxylic acid chelator, tartaric acid, polyphosphoric acid
Salt chelating agent and polycarboxylate chelating agent.
8. Cu-MoTi etching solution as claimed in claim 6, which is characterized in that the metal-chelator includes ethylenediamine tetrem
Acid, hydroxyethylethylene diamine tri-acetic acid, polyacrylic acid and polymethylacrylic acid.
9. Cu-MoTi etching solution as described in claim 1, which is characterized in that the Cu-MoTi etching solution also includes 0.01~
5wt% stabilizer.
10. Cu-MoTi etching solution as claimed in claim 9, which is characterized in that the stabilizer is phenylurea.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711104710.9A CN109778190A (en) | 2017-11-10 | 2017-11-10 | A kind of Cu-MoTi etching solution |
| US15/742,097 US20190144748A1 (en) | 2017-11-10 | 2017-11-24 | Cu-MoTi ETCHING SOLUTION |
| PCT/CN2017/112873 WO2019090855A1 (en) | 2017-11-10 | 2017-11-24 | Copper-molybdenum titanium alloy etching solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711104710.9A CN109778190A (en) | 2017-11-10 | 2017-11-10 | A kind of Cu-MoTi etching solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109778190A true CN109778190A (en) | 2019-05-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711104710.9A Pending CN109778190A (en) | 2017-11-10 | 2017-11-10 | A kind of Cu-MoTi etching solution |
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| CN (1) | CN109778190A (en) |
| WO (1) | WO2019090855A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115216771A (en) * | 2022-09-20 | 2022-10-21 | 深圳市板明科技股份有限公司 | Printed circuit board copper surface roughening liquid and application thereof |
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| WO2019090855A1 (en) | 2019-05-16 |
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Application publication date: 20190521 |