CN102834548A - Copper and titanium composition for metal layer etching solution - Google Patents
Copper and titanium composition for metal layer etching solution Download PDFInfo
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- CN102834548A CN102834548A CN2011800161296A CN201180016129A CN102834548A CN 102834548 A CN102834548 A CN 102834548A CN 2011800161296 A CN2011800161296 A CN 2011800161296A CN 201180016129 A CN201180016129 A CN 201180016129A CN 102834548 A CN102834548 A CN 102834548A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/42—Aqueous compositions containing a dispersed water-immiscible liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Abstract
The present invention relates to a copper and titanium composition for a metal etching solution, comprising the following, based on the total weight of the composition: 5 to 20 wt % of persulfate,0.01 to 2 wt % of a fluorine compound,1-10 wt % of an additive containing one or more acids selected from inorganic acids, salts of inorganic acids, and a mixture thereof,0.3 to 5 wt% of a cyclic amine compound,0.01 to 8 wt % of an additive containing one or more compounds selected from a chlorine compound and cupric salts,and with the remainder being water.
Description
Technical field
The present invention relates to a kind of etchant that is used for the metal level of cupric and titanium; And this etchant is used for grid, source/drain wiring; And the electrode that is used for semiconductor device and flat-panel monitor, especially for the electrode of thin film transistor (TFT).
The rights and interests that korean patent application 10-2010-0039822 number that the application's request was submitted on April 29th, 2010 and the korean patent application of submitting on April 30th, 2010 are 10-2010-0040567 number, these patented claims are incorporated among the application through the mode of quoting in full.
Background technology
In semiconductor device and flat-panel monitor, generally include at the processing procedure that forms metal line on the substrate and to use sputter to form metal level, coating photoresist material, use exposure and be developed on the zone of selection and form photoresist material and carry out etching.In addition, before or after each independent step, carry out cleaning step.Etching step utilizes photoresist material to be mask, and metal level is stayed on the zone of selection, and generally includes the dry etching of using plasma body or the wet etching that uses etching solution.
For semiconductor device and flat-panel monitor, particularly TFT, grid and source/drain array routing are made up of metal level, and this metal level comprises the conductive layer of being processed by low-resistance aluminium.But aluminium lamination has problem, reason be owing to form in step subsequently that hillock (hillock) causes and another conductive layer between short circuit, and form insulation layer because of catalytic oxidation thing layer.Therefore, the electrode of the bilayer of cupric and titanium as grid, source/drain array routing and TFT disclosed.
Yet,, should use different etchants to each layer for the bilayer of etching cupric and titanium.Particularly, the etchant that is used for the copper bearing metal level of etching should mainly comprise based on the etchant of hydrogen peroxide or based on the etchant of potassium hydrogen persulfate (oxone).Under situation based on the etchant of hydrogen peroxide, etchant possibly decompose and the shelf lives short.Under the situation based on the etchant of potassium hydrogen persulfate, the slow and compsn of etch-rate becomes unstable in time.
Summary of the invention
Therefore, first purpose of the present invention provides a kind of etchant, and said etchant can the etching cupric and the metal level of titanium, and particularly wet etching Cu/Ti is double-deck all sidedly.
Second purpose of the present invention provides a kind of etchant, even said etchant does not contain hydrogen peroxide and/or potassium hydrogen persulfate also shows fast etch-rate to copper.
The 3rd purpose of the present invention provides a kind of etchant, and said etchant can be simplified etching step and improve productivity.
The 4th purpose of the present invention provides a kind of etchant, and said etchant can be realized the etching of fast etch-rate and homogeneous.
The 5th purpose of the present invention provides a kind of etchant, and said etchant can damage equipment and do not needed expensive equipment during etching.
The 6th purpose of the present invention provides a kind of etchant, and said etchant can advantageously be applied to the large size display panel, produces economic benefit thus.
The 7th purpose of the present invention provides a kind of etchant, said etchant except can the etching cupric and the metal level of titanium, can also etching be used for the IZO or the a-ITO of pixel electrode.
One side of the present invention provides a kind of etchant that is used for the metal level of cupric and titanium; Gross weight based on compsn comprises: the persulphate of 5wt%～20wt%, the fluorine cpd of 0.01wt%～2wt%; 1wt%～10wt% is selected from mineral acid, inorganic acid salt and their mixture one or more; The cyclic amine compound of 0.3wt%～5wt%, 0.01wt%～8wt% is selected from cl cpd and the mantoquita one or more, and all the other are water.
According to the present invention, the metal level of said etchant ability wet etching cupric and titanium, particularly, Cu/Ti is double-deck for the ability wet etching, simplifies etching step thus and improves productivity.According to the present invention, said etchant shows fast etch-rate and makes realizes the homogeneous etching, gives excellent etching performance thus again.Again according to the present invention, do not need expensive equipment when said etchant Not a hair of one's head shall be touched bad equipment and etching, and can advantageously be applied to the large size display panel, produce economic benefit thus.Again according to the present invention, said etchant except can the etching cupric and the metal level of titanium, can also etching be used for the IZO or the a-ITO of pixel electrode.In addition, if the metal level of cupric and titanium is used for source/drain electrode and IZO or a-ITO is used for pixel electrode, according to etchant of the present invention etching source/drain electrode and pixel electrode together.Again according to the present invention, even said etchant does not contain hydrogen peroxide and/or potassium hydrogen persulfate also can be realized the etch-rate fast to copper.
Embodiment
To provide detailed description of the present invention hereinafter.
According to the present invention, be used for the etchant of the metal level of cupric and titanium, comprise: persulphate; Fluorine cpd; Be selected from mineral acid, inorganic acid salt and their mixture one or more; Cyclic amine compound; Be selected from cl cpd and the mantoquita one or more; And water.
Being included in according to the persulphate in the etchant of the present invention is the main oxygenant that is used for the copper bearing layer of etching, and based on the gross weight of compsn, the consumption of persulphate is 5wt%～20wt%, and preferred 7wt%～18wt%.When the amount of this component fell in the above-mentioned scope, copper bearing layer was with the appropriate vol etching, and etching outline becomes excellent.
The group that the optional free ammonium persulphate of persulphate (APS), Sodium Persulfate (SPS) and Potassium Persulphate (PPS) are formed.
Be included in according to the fluorine cpd in the etchant of the present invention and be mainly used in the titaniferous layer of etching bag, IZO or a-ITO, and based on the gross weight of compsn, fluorine cpd are with 0.01wt%～2wt%, and preferably add with the amount of 0.05wt%～1wt%.When the amount of this component fell in the above-mentioned scope, titaniferous layer was with the appropriate vol etching, and etching outline becomes excellent.Prescribe a time limit when this components contents is lower than the following of above-mentioned scope, the etch-rate of titaniferous layer reduces, and possibly produce etch residue.On the contrary, when this components contents surpasses going up in limited time of above-mentioned scope, possibly damage such as substrate and siliceous insulation layers such as glass.
Fluorine cpd refer to be dissociated into the compound of fluorion or polyatom fluorion, are selected from the group of being made up of Neutral ammonium fluoride, Sodium Fluoride, Potassium monofluoride, matt salt, sodium bifluoride and potassium hydrogen fluoride.
Be included in according to one or more the oxidable and copper bearing layers of etching in mineral acid, inorganic acid salt and their mixture that are selected from the etchant of the present invention, and oxidable titaniferous layer.Based on the gross weight of compsn, being selected from mineral acid, inorganic acid salt and their mixture one or more can 1wt%～10wt%, and preferably uses with the amount of 2wt%～7wt%.When the amount of this component fell in the above-mentioned scope, copper bearing layer and titaniferous layer were with the appropriate vol etching, and etching outline becomes excellent.Prescribe a time limit when this components contents is lower than the following of above-mentioned scope, etch-rate possibly reduce, and etching outline does not desirably degenerate and produces etch residue.On the contrary, when this components contents surpasses going up in limited time of above-mentioned scope, then etching possibly take place, photoresist material possibly split and form the crack, thereby etching solution can penetrate in the crack, does not desirably make line short.
Mineral acid is selected from by nitric acid, sulfuric acid, phosphoric acid and crosses the group that chloric acid is formed.
Inorganic acid salt is selected from the group of being made up of nitrate salt, vitriol, phosphoric acid salt and perchlorate.
Be included in according to the cyclic amine compound in the etchant of the present invention and time can form profile when the copper bearing layer of etching.Based on the gross weight of compsn, cyclic amine compound is with 0.3wt%～5wt%, and preferred amount use with 0.5wt%～3wt%.When the amount of this component falls in the above-mentioned scope, form suitable copper etch-rate and cone angle, and side facet etch degree effectively.
Cyclic amine compound is selected from the group of being made up of 5-amino tetrazole, tolyl-triazole, benzotriazole and methyl-triazole.
Be included in according in cl cpd and the mantoquita one or more of being selected from the etchant of the present invention,,, and preferably use with the amount of 0.1wt%～5wt% with 0.01wt%～8wt% based on the gross weight of compsn.When the amount of this component falls in the above-mentioned scope, more effectively form cone angle.When the etch capabilities of etching solution reaches capacity because of the plate number accumulation of handling, can prevent the increase of side etching.
Cl cpd is the pro-oxidant that is used for the copper bearing layer of etching.Cl cpd is the compound that can be dissociated into cl ions, is selected from the group of being made up of spirit of salt, sodium-chlor, Repone K and ammonium chloride (NH4Cl).
When the etch capabilities of etching solution reached capacity because of the plate number accumulation of handling, mantoquita can prevent the increase of side etching.
The group that the optional free cupric chloride of mantoquita, copper sulfate and cupric nitrate are formed.
In in being selected from cl cpd and mantoquita one or more; When have only cl cpd be included in according to etchant of the present invention in the time; Based on the gross weight of compsn, cl cpd is with 0.1wt%～5wt%, and preferred amount use with 0.5wt%～3wt%.When the amount of this component falls in the above-mentioned scope, can more effectively form cone angle.
In in being selected from cl cpd and mantoquita one or more, when have only mantoquita be included in according to etchant of the present invention in the time, based on the gross weight of compsn, mantoquita is with 0.01wt%～3wt%, and preferably uses with the amount of 0.1wt%～1wt%.If the amount of this component is lower than the lower limit of above-mentioned scope, then when the etch capabilities of etching solution reaches capacity because of the plate number accumulation of handling, be difficult to prevent the increase of side etching.
On the contrary, if its content exceeds the upper limit of above-mentioned scope, then the copper ion concentration in the etchant increases, and does not desirably reduce the plate number of handling in time.
Being included in according to the water in the etchant of the present invention is the deionized water that is applicable to semiconductor processes, and resistivity is 18M Ω cm at least.Based on the gross weight of compsn, water adds as rest part, is 100wt% thereby make the gross weight of etchant.
Except that said components, also can further comprise according to etchant of the present invention and to be selected from etching control agent, tensio-active agent, sequestrant (sequestering agent) and the inhibitor one or more.
Enumerate the following example and test case illustrates the present invention, but be not interpreted as restriction the present invention, but can provide the present invention better to understand.
Embodiment 1～6, comparative example 1～4: the preparation of etchant
The amount of component prepares the etchant of 180kg shown in the use following table 1.
Table 1
APS: ammonium persulphate
ABF: matt salt
The ATZ:5-amino tetrazole
Test case: the assessment of etchant performance
Silicon nitride (SiNx) is deposited upon on glass, on silicon nitride layer, forms the copper layer, and on the copper layer, form titanium layer.Photoresist material is applied on the titanium layer with predetermined pattern, and the substrate that obtains is cut into 550mm x 650mm with diamond blade, make specimen thus.
< assessment of etching performance >
Embodiment 1～6 and comparative example 1～4 etchant are separately introduced in the spray-type etching system (ETCHER (TFT) is available from SEMES), be warmed to 25 ℃ of temperature then.Subsequently, temperature reaches 30 ± 0.1 ℃, carries out etching afterwards.Total etching period is set based on 40% EPD.Specimen is placed in the device, and uses composition spray.After etching was accomplished, dry with washed with de-ionized water specimen and use hot-air drier, stripper (stripper) was removed photoresist material (PR) with photoresist afterwards.After cleaning and the drying, use sem (SEM) (S-4700 is available from HITACHI) assessment etching performance.The result is shown in the following table 2.
Table 2
| Etching performance | |
| Embodiment 1 | ◎ |
| Embodiment 2 | ◎ |
| Embodiment 3 | ◎ |
| Embodiment 4 | ◎ |
| Embodiment 5 | ◎ |
| Embodiment 6 | ◎ |
| Comparative example 1 | × |
| Comparative example 2 | △ |
| Comparative example 3 | △ |
| Comparative example 4 | × |
◎: excellent (CD skew (Skew) :≤1 μ m, cone angle: 40 °～60 °)
Zero: good (CD skew :≤1.5 μ m, cone angle: 30 °～60 °)
△: general (CD skew :≤2 μ m, cone angle: 30 °～60 °)
X: poor (metal level loss and generation residue)
Obviously learnt by table 2: when using embodiment 1～6 etchant separately to carry out etching, etching performance is excellent.But it is when using comparative example 1～4 etchant separately to carry out etching, inferior during the compsn of etching performance ratio use embodiment 1～6.
< handling the assessment of plate number >
Use embodiment 5 and 6 etchant separately to carry out, further add 1000ppm copper powder and dissolving fully with reference to etching (reference etch).Carry out etching test subsequently once more, and compare with reference to etching, if side etching change surpass 0.2 μ m be evaluated as poor.The result is shown in the following table 3.
Table 3
◎: excellent (side etching is changed to 0.2 μ m or following when the plate number of handling increases in time)
X: poor (side etching changes above 0.2 μ m when the plate number of handling increases in time)
Obviously learnt by table 3: when the compsn that uses according to the embodiment of the invention 6, the plate number of processing is a lot of greatly.
Claims (7)
1. etchant that is used for the metal level of cupric and titanium, the gross weight based on said compsn comprises:
The persulphate of 5wt%～20wt%;
The fluorine cpd of 0.01wt%～2wt%;
1wt%～10wt% is selected from mineral acid, inorganic acid salt and their mixture one or more;
The cyclic amine compound of 0.3wt%～5wt%;
0.01wt%～8wt% is selected from cl cpd and the mantoquita one or more; And
All the other are water.
2. etchant according to claim 1, wherein said persulphate is selected from the group of being made up of ammonium persulphate, Sodium Persulfate and Potassium Persulphate.
3. etchant according to claim 1, wherein said fluorine cpd are selected from the group of being made up of Neutral ammonium fluoride, Sodium Fluoride, Potassium monofluoride, matt salt, sodium bifluoride and potassium hydrogen fluoride.
4. etchant according to claim 1, wherein said mineral acid are selected from by nitric acid, sulfuric acid, phosphoric acid and cross the group that chloric acid is formed, and said inorganic acid salt is selected from the group of being made up of nitrate salt, vitriol, phosphoric acid salt and perchlorate.
5. etchant according to claim 1, wherein said cyclic amine compound is selected from the group of being made up of 5-amino tetrazole, tolyl-triazole, benzotriazole and Methylbenzotriazole.
6. etchant according to claim 1, wherein said cl cpd is selected from the group of being made up of spirit of salt, sodium-chlor, Repone K and ammonium chloride.
7. etchant according to claim 1, wherein said mantoquita is selected from the group of being made up of cupric chloride, copper sulfate and cupric nitrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710033540.3A CN106995922A (en) | 2010-04-29 | 2011-04-28 | For cupric and the etchant of the metal level of titanium |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0039822 | 2010-04-29 | ||
| KR1020100039822A KR20110120420A (en) | 2010-04-29 | 2010-04-29 | An etching solution composition for metal layer comprising copper and titanium |
| KR1020100040567A KR101641740B1 (en) | 2010-04-30 | 2010-04-30 | An etching solution composition for metal layer comprising copper and titanium |
| KR10-2010-0040567 | 2010-04-30 | ||
| PCT/KR2011/003178 WO2011136597A2 (en) | 2010-04-29 | 2011-04-28 | Copper and titanium composition for metal layer etching solution |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710033540.3A Division CN106995922A (en) | 2010-04-29 | 2011-04-28 | For cupric and the etchant of the metal level of titanium |
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| Publication Number | Publication Date |
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| CN102834548A true CN102834548A (en) | 2012-12-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710033540.3A Pending CN106995922A (en) | 2010-04-29 | 2011-04-28 | For cupric and the etchant of the metal level of titanium |
| CN2011800161296A Pending CN102834548A (en) | 2010-04-29 | 2011-04-28 | Copper and titanium composition for metal layer etching solution |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710033540.3A Pending CN106995922A (en) | 2010-04-29 | 2011-04-28 | For cupric and the etchant of the metal level of titanium |
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| Country | Link |
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| CN (2) | CN106995922A (en) |
| TW (1) | TWI608126B (en) |
| WO (1) | WO2011136597A2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103571495A (en) * | 2012-08-03 | 2014-02-12 | 三星显示有限公司 | Etchant composition and method of manufacturing thin film transistor using the same |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
| CN105385450A (en) * | 2014-09-01 | 2016-03-09 | 三星显示有限公司 | Etching agent component and transparency electrode formation method using the same |
| CN105579618A (en) * | 2013-09-24 | 2016-05-11 | 三星显示有限公司 | Etchant composition and method for forming metal wire and thin film transistor substrate using same |
| CN108456885A (en) * | 2017-02-13 | 2018-08-28 | 东进世美肯株式会社 | Etchant and utilize its metal line forming method |
| CN114381733A (en) * | 2020-10-19 | 2022-04-22 | 东友精细化工有限公司 | Etching solution composition and method for manufacturing array substrate for display device using same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101922625B1 (en) * | 2012-07-03 | 2018-11-28 | 삼성디스플레이 주식회사 | Etchant for metal wire and method for manufacturing metal wire using the same |
| CN102925894B (en) * | 2012-10-09 | 2014-10-29 | 江阴润玛电子材料股份有限公司 | Acid copper etching liquid and preparation process thereof |
| KR102160286B1 (en) * | 2013-11-04 | 2020-09-28 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
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| US5298117A (en) * | 1993-07-19 | 1994-03-29 | At&T Bell Laboratories | Etching of copper-containing devices |
| CN1117090A (en) * | 1994-03-04 | 1996-02-21 | 美克株式会社 | Agent for surface processing of copper and copper alloy |
| CN101265579A (en) * | 2007-03-15 | 2008-09-17 | 东进世美肯株式会社 | Etchant for thin film transistor liquid crystal display device |
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| KR100419071B1 (en) * | 2001-06-20 | 2004-02-19 | 엘지.필립스 엘시디 주식회사 | Etching solution for copper titanium layer and etching method thereof |
| KR101174767B1 (en) * | 2005-03-10 | 2012-08-17 | 솔브레인 주식회사 | Method for fabricating liquid crystal display device using etchant for metal layers |
| KR101495683B1 (en) * | 2008-09-26 | 2015-02-26 | 솔브레인 주식회사 | Cu or Cu/Mo or Cu/Mo alloy electrode etching liquid in Liquid Crystal Display system |
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2011
- 2011-04-28 WO PCT/KR2011/003178 patent/WO2011136597A2/en active Application Filing
- 2011-04-28 CN CN201710033540.3A patent/CN106995922A/en active Pending
- 2011-04-28 CN CN2011800161296A patent/CN102834548A/en active Pending
- 2011-04-29 TW TW100115193A patent/TWI608126B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5298117A (en) * | 1993-07-19 | 1994-03-29 | At&T Bell Laboratories | Etching of copper-containing devices |
| CN1117090A (en) * | 1994-03-04 | 1996-02-21 | 美克株式会社 | Agent for surface processing of copper and copper alloy |
| CN101265579A (en) * | 2007-03-15 | 2008-09-17 | 东进世美肯株式会社 | Etchant for thin film transistor liquid crystal display device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103571495A (en) * | 2012-08-03 | 2014-02-12 | 三星显示有限公司 | Etchant composition and method of manufacturing thin film transistor using the same |
| CN103571495B (en) * | 2012-08-03 | 2017-11-28 | 三星显示有限公司 | Etchant composition and method of manufacturing thin film transistor using the same |
| CN105579618A (en) * | 2013-09-24 | 2016-05-11 | 三星显示有限公司 | Etchant composition and method for forming metal wire and thin film transistor substrate using same |
| CN105579618B (en) * | 2013-09-24 | 2018-08-24 | 三星显示有限公司 | Etching agent composite and the method for forming metal line and thin film transistor substrate using it |
| CN105385450A (en) * | 2014-09-01 | 2016-03-09 | 三星显示有限公司 | Etching agent component and transparency electrode formation method using the same |
| CN105385450B (en) * | 2014-09-01 | 2018-09-28 | 三星显示有限公司 | Etchant constituent and utilize this transparent electrode forming method |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
| CN104233302B (en) * | 2014-09-15 | 2016-09-14 | 南通万德科技有限公司 | A kind of etching solution and application thereof |
| CN108456885A (en) * | 2017-02-13 | 2018-08-28 | 东进世美肯株式会社 | Etchant and utilize its metal line forming method |
| CN108456885B (en) * | 2017-02-13 | 2022-08-23 | 东进世美肯株式会社 | Etching solution composition and method for forming metal wiring using the same |
| CN114381733A (en) * | 2020-10-19 | 2022-04-22 | 东友精细化工有限公司 | Etching solution composition and method for manufacturing array substrate for display device using same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106995922A (en) | 2017-08-01 |
| WO2011136597A3 (en) | 2012-03-01 |
| WO2011136597A2 (en) | 2011-11-03 |
| TWI608126B (en) | 2017-12-11 |
| TW201142085A (en) | 2011-12-01 |
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