CN106498371A - Film formation device and film build method - Google Patents
Film formation device and film build method Download PDFInfo
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- CN106498371A CN106498371A CN201610188203.7A CN201610188203A CN106498371A CN 106498371 A CN106498371 A CN 106498371A CN 201610188203 A CN201610188203 A CN 201610188203A CN 106498371 A CN106498371 A CN 106498371A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a kind of film formation device and film build method, reduces film forming matter from stripping electrode.Film formation device includes：Chamber, deposits workpiece；Electrode, configures in chamber interior, in order to carry out film forming on workpiece and supply electric power；And temperature adjustment device, the temperature of adjustment electrode, so that carry out a succession of in film process of film forming on workpiece, is carried out in the operation beyond the film formation process of film forming and film formation process on workpiece, the temperature of electrode is for approximately fixed, in order to avoid the film forming matter of electrode is piled up in from stripping electrode.
Description
Technical field
The present invention relates to one kind is configured with film formation device and the film forming of electrode in chamber (chamber)
Method.
Background technology
As the film formation device for carrying out film forming in process object workpiece (work), using there is plasma
Body (plasma) chemical vapor deposition (Chemical Vapor Deposition, CVD) device splashes
Plating (sputter) device etc..In these film formation devices, in film formation process, film forming matter can also be deposited in
The internal face of chamber is deposited on the surface of the electrode for being configured at chamber interior.Because these film forming matters from
Chamber or stripping electrode are simultaneously attached on workpiece, and the film quality that can produce film of the film forming on workpiece declines
The problems such as.Thus, for example being ground configuring the countermeasures such as anti-adhesion plate to the internal face for covering chamber
Study carefully (referring for example to patent document 1).
Prior art literature
Patent document
Patent document 1：Japanese Patent Laid-Open 2007-012907 publication
Content of the invention
[invention problem to be solved]
Because of the within the chamber in plasma CVD equipment, to be exposed to plasma medium, is generally disposed at chamber
The temperature of indoor electrode can rise in film forming processing procedure.Thus, electrode can be expanded.Separately
On the one hand, when workpiece is changed, because carrying out atmosphere opening to chamber, so as to the temperature of electrode can be because cold
But decline.Thus, electrode can shrink.Due to being sent out according to temperature change as electrode meeting so
Change shape, so as to the difference because of electrode with the coefficient of thermal expansion of film forming matter causes film forming matter from stripping electrode.Its
As a result, the problems such as film forming matter being produced and is attached to workpiece.
In view of the problem points, it is an object of the invention to provide a kind of film forming matter that reduces is shelled from electrode
From film formation device and film build method.
[technological means of solve problem]
According to a form of the present invention, there is provided a kind of film formation device, its are used for carrying out film forming in workpiece,
The film formation device includes：(A) chamber, deposits workpiece；(B) electrode, configures in chamber interior,
In order to carry out film forming on workpiece and supply electric power；And (C) temperature adjustment device, adjust electrode
Temperature, so that carrying out a succession of in film process of film forming on workpiece, carries out film forming on workpiece
Film formation process and film formation process beyond operation in, the temperature of electrode is approximately fixed, in order to avoid pile up
In electrode film forming matter from stripping electrode.
According to the present invention another form, there is provided a kind of film build method, its a succession of in film process,
The temperature of adjustment electrode, so that beyond carrying out the film formation process of film forming and film formation process on workpiece
In operation, the temperature of electrode is approximately fixed, in order to avoid be piled up in the film forming matter of electrode from stripping electrode,
Described a succession of comprise the following steps into film process：By film forming process object Workpiece storage within the chamber；
By the power supply of regulation to the electrode for being configured within the chamber, to carry out film forming on workpiece；And it is right
After workpiece carries out film forming, atmosphere opening is carried out to chamber.
(The effect of invention)
In accordance with the invention it is possible to provide a kind of reduce film forming matter from the film formation device of stripping electrode and into
Film method.
Description of the drawings
Fig. 1 is the schematic diagram of the structure of the film formation device of the 1st embodiment for representing the present invention.
Fig. 2 is for carrying out to the film build method of film formation device of the 1st embodiment using the present invention
The flow chart of explanation.
Fig. 3 is the schematic diagram of the structure of the film formation device of the 2nd embodiment for representing the present invention.
Fig. 4 is the schematic diagram that the action of the film formation device of the 2nd embodiment to the present invention is illustrated.
Fig. 5 is the schematic diagram of the structure of the film formation device for representing another embodiment of the present invention.
[explanation of symbol]
1：Film formation device
10：Chamber
20：Electrode
30：Temperature adjustment device
40：Power supply
50：Gas supply mechanism
60：Exhaust gear
70：Workpiece holder
100：Workpiece
101：1st processing region
102：2nd processing region
201：Target
202：Target electrode
203：Sputter power supply
204：Gear lock
510：Unstrpped gas
Specific embodiment
Next, being explained with reference to embodiments of the present invention.In the record of following accompanying drawing,
For same or similar part marks same or similar symbol.But should be noted that, accompanying drawing is only
Schematic person.And, embodiment shown below is to illustrate the technological thought tool for by the present invention
The device of body or method, in embodiments of the present invention, the structure of constituent part, configuration etc. are not
It is defined in described below person.Embodiments of the present invention can add various changes in detail in the claims.
(the 1st embodiment)
The film formation device 1 of the 1st embodiment of the present invention is as shown in figure 1, possess：Chamber 10, deposits
Put process object workpiece 100；Electrode 20, configures in the inside of chamber 10, in order on workpiece 100
Carry out film forming and supply electric power；And temperature adjustment device 30, adjust the temperature of electrode 20.
Film formation device 1 shown in Fig. 1 is carried out on workpiece 100 by plasma CVD method
The plasma CVD equipment of film, possesses power supply 40, the gas supply machine to 20 supply electric power of electrode
Structure 50 and exhaust gear 60.Power supply 40 is, for example, high frequency electric source.Gas supply mechanism 50 will be formed
The unstrpped gas 510 of the film on the workpiece 100 is supplied to the inside of chamber 10.Exhaust gear 60
Gas in chamber 10 is discharged to the outside.Possesses the gas tune for omitting diagram in exhaust gear 60
Pressure in chamber 10 is remained fixation by pressure valve.
In film formation device 1, in the electrode 20 being configured in chamber 10 opposite to each other with workpiece 100 and take
Carry between the workpiece holder (work holder) 70 of workpiece 100, formation unstrpped gas 510 etc.
Gas ions.For example, workpiece holder 70 is made by electrode 20 as negative electrode (cathode) electrode
For anode (anode) electrode.By workpiece 100 is exposed to the plasma being formed in inside chamber 10
In body so that film of the contained raw material with unstrpped gas 510 as principal component on workpiece 100 into
Film.
Hereinafter, the example of the method by the formation film of film formation device 1 is described with reference to Fig. 2.
In step S11, electrode 20 is adjusted to by temperature adjustment device 30 for regulation temperature.Connect
Get off, in step S12, temperature that electrode 20 is adjusted to regulation, and film forming is dealt with objects workpiece
100 deposit to chamber 10.Subsequently, make to become vacuum in chamber 10 by exhaust gear 60.
In step S13, unstrpped gas 510 is directed in chamber 10 by gas supply mechanism 50.
Next, by exhaust gear 60 to reducing pressure in chamber 10, by the unstrpped gas in chamber 10
510 adjust to the air pressure of regulation.
The step of film formation process in S14, power supply 40 is turned on (ON) and the electric power of regulation is supplied
Give to electrode 20.Thus, the unstrpped gas 510 in chamber 10 is in plasma.Formed etc.
Exciting in gas ions is planted and is reacted on the surface of workpiece 100, so as to the surface shape in workpiece 100
Into film.In the film formation process, the temperature of electrode 20 is adjusted also by temperature adjustment device 30.
That is, electrode 20 is adjusted to the temperature of regulation, and carries out the film forming of workpiece 100.
After forming the film of regulation thickness on workpiece 100, power supply 40 is disconnected in step S15
(OFF), terminate film formation process.Next, by exhaust gear 60 by unstrpped gas 510 from chamber
10 discharge.Subsequently, in step s 16, electrode 20 is adjusted to set point of temperature and chamber 10 is entered
Row atmosphere opening, from the workpiece 100 that chamber 10 takes out of film forming.
By described a succession of into film process, the film that film forming specifies on workpiece 100.In addition,
In the case of continuously running film formation device 1, return to step S11, by untreated new workpiece 100
Deposit to chamber 10.
Temperature adjustment device 30 adjusts the temperature of electrode 20, so that in reference to illustrated by Fig. 2
Consecutive in film process, the temperature of electrode 20 for fixing, in order to avoid be piled up in the film forming matter of electrode 20 from
Electrode 20 is peeled off.That is, in film formation device 1, carry out on workpiece 100 film formation process of film forming with into
In other operations beyond membrane process, the temperature of electrode 20 is retained as fixing.For example, in order to more
When changing 100 grade of workpiece and carrying out atmosphere opening to chamber 10 with film formation process in, the temperature of electrode 20
For fixation.Therefore, the deformation of the electrode 20 for causing because of temperature change is suppressed.As a result, can press down
Make the difference because of electrode with the coefficient of thermal expansion of film forming matter and cause film forming matter from stripping electrode.
Temperature adjustment device 30 shown in Fig. 1 has and is configured at adjustment portion 31 in electrode 20 and right
The configuration part 32 set by the temperature of adjustment portion 31.For example, as adjustment portion 31, in electrode 20
Inside arrange for warm water flowing circulation waterway.Also, the temperature that the portion that is set 32 have adjusted temperature
Water is supplied to adjustment portion 31, makes warm water in the inner loop of electrode 20, to adjust the temperature of electrode 20.
Or, also can be for adjustment portion 31 be using heating element heaters such as heaters (heater), by configuration part
32 controlling the heating element heater, electrode 20 is adjusted to the temperature of regulation.
By film formation device 1, for example can be by including HMDO
(Hexamethyldisiloxane)(HMDSO：O[Si(CH3)3]2) and oxygen (O2) unstrpped gas
510 carry out plasma polymerization and obtain with SiOXCY：The film of H structure is used as barrier
(barrier) film, and film forming is carried out on the workpiece 100 as resinous wood.Now, if to electrode
20 materials'use metal material such as copper (Cu), the then barrier film of film forming and electrode on workpiece 100
The difference of 20 thermal coefficient of expansion is big.Therefore, if electrode 20 is because of the temperature between film formation process and other operations
Degree changes and deforms, then can be because of electrode 20 and the thermal expansion of the film forming matter being piled up on electrode 20
The difference of rate and cause film forming matter to be peeled off from electrode 20.
However, in film formation device 1, from the beginning of workpiece 100 is deposited to chamber 10, through film forming work
Sequence, till workpiece 100 is taken out of from chamber 10, adjusts electricity by temperature adjustment device 30
The temperature of pole 20, so that the temperature of electrode 20 is approximately fixed.Therefore, electrode 20 will not become
Shape, film forming matter are suppressed from the stripping of electrode 20.The so-called temperature by electrode 20 is maintained substantially
Fixed, refer to and be maintained what electrode 20 only will not deform from the degree that electrode 20 is peeled off in film forming matter
Temperature, the preferably temperature of electrode 20 are maintained fixed completely, so that electrode 20 is completely not
Can deform.
The temperature of electrode 20 arbitrarily can set.For example, electrode chamber 10 being subject to during atmosphere opening
It is roughly the same temperature that 20 temperature is adjusted to the temperature of the electrode 20 in film formation process, to suppress
Because chamber 10 atmosphere opening when the temperature drop of electrode 20 that causes of radiating.Or, also can root
Internal temperature according to chamber 10 of the rate of film build (rate) when high is adjusting the temperature of electrode 20.Especially,
The temperature of electrode 20 is adjusted to rate of film build height preferably and the film of required film quality can be made in workpiece
The temperature of film forming well on 100.
For example, as described below, electrode 20 is set according to the temperature of the workpiece 100 during film formation process
Temperature.In the case where workpiece 100 is resin, sometimes for carry out film forming and it is preferred that by workpiece 100
Temperature be set higher than room temperature.For example in the case where film forming is carried out using HMDSO, if work
The temperature of part 100 is 60 DEG C～80 DEG C, then film can be adhered well on workpiece 100.By so
As be set as that the workpiece 100 of set point of temperature is deposited in chamber 10 in the case of, the temperature of electrode 20
Set also according to the temperature of workpiece 100.Thereby, it is possible to suppress the temperature change of workpiece 100.
Therefore, the temperature of electrode 20 is set as 60 DEG C～80 DEG C by temperature adjustment device 30.
In addition, also the temperature of electrode 20 can be set as to chamber 10 by temperature adjustment device 30
Carry out the temperature in atmosphere opening.The temperature of the electrode 20 in film formation process than atmosphere opening in electricity
In the case of the temperature height of pole 20, such as by using peltier (Peltier) element to adjustment portion 31
Deng so as to the temperature of the electrode 20 in film formation process can be reduced.
But, by improving the temperature of electrode 20, can be reduced by bakeing (baking) effect
The moisture being adsorbed in atmosphere opening on 10 internal face of chamber etc..Thereby, it is possible to suppress to chamber 10
The increase of time that is exhausted of inside.It is therefore preferable that the temperature of electrode 20 is higher than room temperature.Therefore,
The high temperature of temperature of the electrode 20 to be subject to than chamber 10 during atmosphere opening, by the temperature of electrode 20
It is adjusted to fixed.For example, the temperature of electrode 20 also can be adjusted by temperature adjustment device 30, with
The temperature being fixed as in the temperature highest film formation process of electrode 20.
And, carry out greatly except the temperature of the electrode 20 of rising in film formation process and to chamber 10
Beyond temperature change between the temperature of the electrode 20 that gas declines when opening, electrode 20 can also produce temperature
Degree change.For example, in the case where the electric power supplied by electrode 20 changes, the temperature of electrode 20
Degree can change.And, in the case of film formation time length or change workpiece 100
In the case of being carried out continuously into film process, the temperature of electrode 20 can be gradually increasing.If thus, not to electricity
The temperature of pole 20 is adjusted, then electrode 20 can be caused to produce because of a variety of causes into during film process every time
Temperature change.
On the other hand, in the film formation device 1 of the 1st embodiment of the invention, including film formation process
A succession of in film process, the temperature of electrode 20 is adjusted to fixed.Therefore, can suppress because of electrode
20 temperature change causes film forming matter to peel off from electrode 20.As a result, according to film formation device 1, can prevent
The problems such as only film forming matter is attached to workpiece 100 and causes film quality generation deterioration or thickness to become uneven.
(the 2nd embodiment)
The film formation device 1 of the 2nd embodiment of the present invention is different from the film formation device 1 shown in Fig. 1
Part is：As shown in figure 3, the inner setting in chamber 10 has
The multiple processing regions for processing.Other structures are identical with the 1st embodiment.
Fig. 3 is represented and is set with the 1st processing region 101 and the 2nd processing region 102 in chamber 10
Example as multiple processing regions.Workpiece holder 70 makes workpiece 100 interior throughout the 1st in chamber 10
Processing region 101 and the 2nd processing region 102 and move.
Film formation device 1 shown in Fig. 3 is illustrated：1st processing region 101 be by sputtering method and
The sputter processing region of film forming is carried out on workpiece 100, and the 2nd processing region 102 is by plasma
CVD and carry out the example of the plasma CVD processing region of film forming on workpiece 100.1st
In processing region 101, target (target) 201 is installed on target electrode 202.Target electrode 202
Be connected to supply high frequency (radio frequency (Radio Freqency, RF)) electric power or direct current (Direct Current,
DC) the sputter power supply 203 of electric power.The structure of the 2nd processing region 102 and the film forming dress shown in Fig. 1
Put 1 identical.
Hereinafter, to being carried out continuously in the process in sputter processing region and plasma CVD processing region
The situation of process illustrate.
First, electrode 20 is adjusted to the temperature of regulation by temperature adjustment device 30, and by workpiece
100 deposit in chamber 10, as shown in figure 3, workpiece 100 is configured at the 1st processing region 101
In.Also, from the inert gas supply source 52 of gas supply mechanism 50 by inertia such as argon (Ar) gas
Gas 520 is imported in chamber 10.From sputter power supply 203 to 202 supply electric power of target electrode so that inertia
Gas 520 discharges, so as to form plasma in the gas phase of the near surface of target 201.Wait
It is subject to the cation of the inert gas 520 for accelerating to collide to the surface of target 201 in gas ions, passes through
Sputter and discharge target atom.The atom discharged from the surface of target 201 adheres to/it is piled up in workpiece
100 surface, and form film.
After the sputter process in the 1st processing region 101 terminates, as shown in figure 4, being equipped on workpiece
Workpiece 100 on fixed mount 70 moves to the 2nd processing region 102 from the 1st processing region 101.With
Afterwards, in the 2nd processing region 102, by referring to the film build method illustrated by Fig. 2, by electrode 20
The temperature of regulation is adjusted to, and workpiece 100 is carried out based on plasma CVD method into film process.
That is, the inside of the chamber 10 of vacuum is vented to by exhaust gear 60, from gas supply mechanism
50 unstrpped gas supply source 51 imports unstrpped gas 510.Then, unstripped gas is made in chamber 10
Body 510 is plasmarized, forms film on the surface of workpiece 100.Subsequently, take out of from chamber 10
The workpiece 100 that handles well.
Described above whole in film process, electrode 20 is adjusted by temperature adjustment device 30
Temperature so that the temperature of electrode 20 for fix.
In addition, in the 1st processing region 101, being configured with by lift 205 and in chamber 10
The gear lock (shutter) 204 for moving along the vertical direction.In the 2nd processing region 102 into film process
During, as shown in figure 4, protecting the surface of target 201 by the gear lock 204 of rising.And,
During atmosphere opening being carried out when 100 grade of workpiece is changed to chamber 10, also by gear lock 204
The surface of protection target 201.On the other hand, during sputter process, as shown in figure 3, gear lock
204 decline.
As described above, according to the film formation device 1 of the 2nd embodiment of the present invention, can pass through true
Empty continuously carrying out the process in the process in the 1st processing region 101 and the 2nd processing region 102.
Therefore, compared with the chamber is set to the situation of vacuum when per treatment, total (total) place can be shortened
The reason time.And, workpiece 100 will not be exposed in air, thus, for example can prevent from being formed at
There is rotten or impurity and be attached on film in the film on workpiece 100.
Further, in the film formation device 1 of the 2nd embodiment, also identical with the 1st embodiment,
In film formation process based on plasma CVD method and other operations in addition to film formation process, pass through
Temperature adjustment device 30 is adjusting the temperature of electrode 20, so that the temperature of electrode 20 is for fixing.Therefore,
The deformation of the electrode 20 caused because of temperature change is suppressed, so as to because of electrode 20 and the heat of film forming matter
The film forming matter that the difference of expansion rate causes is suppressed from the stripping of electrode 20.As a result, implementing the 2nd
In the film formation device 1 of mode, it is attached on workpiece 100 prevented also from the film forming matter that peels off from electrode 20
The problems such as.Other are substantially the same with the 1st embodiment, thus omit the record for repeating.
In addition, the process in the 1st processing region 101 is to appoint with the processing sequence in the 2nd processing region
Meaning.For example, both can as mentioned above as processed in the 1st processing region 101 after, the 2nd
Processed in processing region 102, or also process can have been carried out in the 2nd processing region 102
Afterwards, processed in the 1st processing region 101.
Film formation device 1 shown in Fig. 3 is used for the decorative use of ejection formation plastics (plastic) product
Deng.For example, it is suitable for making the auto parts such as door handle (doorknob) or meters present gold
Category texture, and make the situation of the film forming such as aluminium film, stainless steel (SUS) film, titanium film.And, it is also possible to
Decorative use in family's electrical article, toy, cosmetics containers, the hornbook of clock and watch etc..
For example, in the 1st film (the such as aluminium for forming easily oxidation by sputtering method on workpiece 100
Film etc.) after, continuous using vacuum, formed with covering the 1st film by plasma CVD method anti-
Only the 2nd film of the 1st film oxidation is using as diaphragm.For example, the film build method is before manufacture automobile
During speculum (reflector) of headlight (head light) etc., aluminium film is formed on the surface of resin parts
In the case of wait effectively.
(other embodiment)
As described above, describing the present invention by embodiment, but should not be construed as constituting the disclosure
The discussion and accompanying drawing of a part defines the present invention.According to the disclosure, those skilled in the art should energy
Understand various replacement embodiments, embodiment and application technology.
In described, the example that workpiece 100 is flatly equipped on workpiece holder 70, but this is illustrated
Invention is equally applicable to for example shown in Fig. 5, and workpiece 100 is vertically equipped on boat type (boat type)
In the film formation device 1 of workpiece holder 70.In film formation device 1 shown in Fig. 5, electrode 20 be with
Workpiece 100 is extends in the vertical direction opposite to each other.
And, the situation that film formation device 1 is plasma CVD equipment is illustratively illustrated, but
Can be the film formation device using other film build methods, present invention can be suitably applied to configuration within the chamber
The film formation device of electrode.For example, by temperature adjustment device 30 by the temperature of the target electrode of sputtering unit
Degree is set as fixing, so as to suppress stripping of the film forming matter from target electrode.
Thus, the present invention is certainly comprising various embodiments that does not record etc. herein.Therefore, according to institute
State bright, the technical scope of the present invention is only by the specific item defined of invention of appropriate claims.
Claims (5)
1. a kind of film formation device, for carrying out film forming on workpiece, the film formation device is characterised by
Including：
Chamber, deposits the workpiece；
Electrode, configures in the chamber interior, in order to carry out film forming on the workpiece and supply electric power；
And
Temperature adjustment device, adjusts the temperature of the electrode, so that carrying out film forming on the workpiece
A succession of in film process, carry out the film formation process and the film formation process of film forming on the workpiece
In operation in addition, the temperature of the electrode for fixing, in order to avoid be piled up in the film forming matter of the electrode from
The stripping electrode.
2. film formation device according to claim 1, it is characterised in that
The temperature of the electrode when chamber atmosphere is opened by the temperature adjustment device be adjusted to
The temperature identical temperature of the electrode in the film formation process, to suppress because of the air of the chamber
The temperature drop that radiating when open is caused.
3. film formation device according to claim 1 and 2, it is characterised in that
Carry out on the workpiece film forming a succession of into film process be from by the Workpiece storage to described
Chamber starts, through the film formation process, till the workpiece is taken out of from the chamber everywhere
Reason.
4. film formation device according to claim 1 and 2, it is characterised in that further include：
Power supply, supplies the electric power to the electrode；And
Gas supply mechanism, unstrpped gas is supplied to the inside of the chamber,
The power supply supplies the electric power to the electrode, to form the plasma of the unstrpped gas,
By the workpiece is exposed in the plasma, so that with institute in the unstrpped gas
Film on the workpiece film forming of the raw material for containing for principal component.
5. a kind of film build method, it is characterised in that
A succession of comprise the following steps into film process：
By film forming process object Workpiece storage within the chamber；
By the power supply of regulation to the electrode for being configured at the within the chamber, to carry out on the workpiece
Film forming；And
The workpiece is carried out after film forming, atmosphere opening is carried out to the chamber,
Described a succession of in film process,
The temperature of the electrode is adjusted, so that carrying out film formation process and the institute of film forming on the workpiece
State in the operation beyond film formation process, the temperature of the electrode is for fixing, in order to avoid it is piled up in the electrode
Film forming matter from the stripping electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015173437A JP6565502B2 (en) | 2015-09-03 | 2015-09-03 | Film forming apparatus and film forming method |
| JP2015-173437 | 2015-09-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106498371A true CN106498371A (en) | 2017-03-15 |
Family
ID=58278964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610188203.7A Pending CN106498371A (en) | 2015-09-03 | 2016-03-29 | Film formation device and film build method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6565502B2 (en) |
| CN (1) | CN106498371A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6187691B1 (en) * | 1999-05-14 | 2001-02-13 | Asm Japan K.K. | Method of forming film on semiconductor substrate in film-forming apparatus |
| CN104485277A (en) * | 2009-04-10 | 2015-04-01 | 应用材料公司 | Hvpe chamber hardware |
| CN103534383A (en) * | 2011-05-20 | 2014-01-22 | 株式会社岛津制作所 | Thin film forming device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114807886A (en) * | 2022-04-13 | 2022-07-29 | 北京北方华创微电子装备有限公司 | Process chamber and process method |
| CN114807886B (en) * | 2022-04-13 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Process chamber and process method |
Also Published As
| Publication number | Publication date |
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| JP2017048433A (en) | 2017-03-09 |
| JP6565502B2 (en) | 2019-08-28 |
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