CN103451725A - Vapor phase growth device and producing method of nitride semiconductor illuminating element - Google Patents
Vapor phase growth device and producing method of nitride semiconductor illuminating element Download PDFInfo
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- CN103451725A CN103451725A CN2013102165339A CN201310216533A CN103451725A CN 103451725 A CN103451725 A CN 103451725A CN 2013102165339 A CN2013102165339 A CN 2013102165339A CN 201310216533 A CN201310216533 A CN 201310216533A CN 103451725 A CN103451725 A CN 103451725A
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Abstract
The invention provides a vapor phase growth device and a producing method of a nitride semiconductor illuminating element. The vapor phase growth device is provided with a reaction chamber used for forming a film on a substrate, a substrate retaining part which is disposed in the reaction chamber and is used for retaining the substrate, a top plate which is disposed between the substrate retained by the substrate retaining part and an inner wall face of the reaction chamber opposite to the substrate and which is used for delivering raw-material gas supplied to the reaction chamber, a temperature control part which keep the temperature of the top plate when the film is formed on the substrate to be consistent through controlling the flow of a first gas flowing between the inner wall face and the top plate.
Description
Technical field
The present invention relates to the manufacture method of epitaxially growing equipment and nitride semiconductor luminescent element.
Background technology
Utilize the nitride semi-conductor material of GaN, AlN, InN or their mixed crystal representative manufacture the blue-light-emitting semiconductor element (below be designated as " LED ", LED is Light Emitting Diode: the shortenings of photodiode).Above-mentioned LED is practical as the light source for the LED-backlit of LCD TV or for the light source of LED illumination, is the equipment that future has more demands.The LED particularly be used because of the light source as for illumination needs a large amount of LED chips, so, for further popularization and application, need to further reduce costs.
But the fabrication yield of LED is but not high, fabrication yield is low is the one of the main reasons that causes cost high.Therefore, require to improve the fabrication yield of LED.Such as openly take the growth method that improves the semiconductor crystal that the LED fabrication yield is purpose in TOHKEMY 2001-23902 communique and TOHKEMY 2006-173346 communique etc.
Even in the situation that adopt TOHKEMY 2001-23902 communique and the described technology of TOHKEMY 2006-173346 communique, sometimes also be difficult to seek the raising of the fabrication yield of nitride semiconductor luminescent element.
Summary of the invention
The present invention puts in view of the above problems and proposes, and its purpose is to propose to provide the epitaxially growing equipment of manufacture method of the nitride semiconductor luminescent element with good fabrication yield and the manufacture method with nitride semiconductor luminescent element of good fabrication yield.
Epitaxially growing equipment of the present invention has: the reaction chamber that is used for forming film on substrate; Be arranged at the inside of reaction chamber, be used for keeping the substrate maintaining part of substrate; Top board, its be arranged on the substrate that kept by the substrate maintaining part and and the inner-wall surface of substrate reaction chamber in opposite directions between, be used for carrying the unstripped gas that offers reaction chamber inside on substrate; Temperature control part, its by be controlled at and the inner-wall surface of top board reaction chamber in opposite directions and top board between the flow (following sometimes be designated as " the first gas flow ") of the first gas of flowing, in the time of will on substrate, forming film, the temperature of the top board of (following sometimes be designated as " during film forming ") remains necessarily.
At this, so-called " controlling ... the flow of the first gas " for example means to increase or reduce according to the temperature of top board the flow of the first gas.
And so-called " while on substrate, forming film " means to start to finish to the growth of this film from the growth of film.In the situation that form two-layer above film on substrate, when film " on substrate form " means to start to finish to the growth of this film from the growth of specific film sometimes, sometimes means to start to finish to the growth be arranged at away from the locational film of substrate from the growth of the film of close substrate-side.
Preferably at reaction chamber, form and to be used for to the unstripped gas supplying opening of the internal feed unstripped gas of reaction chamber and to be used for to the outside venting port of discharging the gas of reaction chamber inside of reaction chamber.The substrate maintaining part is preferably and can rotates.Preferably be used for the heating unit of heated substrates with respect to substrate maintaining part, a side setting contrary with top board.
The manufacture method of nitride semiconductor luminescent element of the present invention preferably includes utilizes epitaxially growing equipment of the present invention, forms the operation of nitride semiconductor layer on substrate.
Temperature control part is preferably in the operation that forms nitride semiconductor layer, reduces the flow of the first gas when the temperature of substrate maintaining part reduces, and increases the flow of the first gas when the temperature of substrate holding plate raises.
Temperature control part is preferably in forming the operation of nitride semiconductor layer, by the temperature of top board, remains on more than 550 ℃ or below 250 ℃.
The operation that forms nitride semiconductor layer preferably includes: form the operation of N-shaped nitride semiconductor layer on substrate, form the operation of active coating on the N-shaped nitride semiconductor layer, form the operation of p-type nitride semiconductor layer on active coating.
Preferably at least one operation in the operation of the operation that forms the N-shaped nitride semiconductor layer and formation p-type nitride semiconductor layer, temperature control part remains on the temperature of top board more than 550 ℃, preferably in the operation that forms active coating, the temperature of top board is remained on below 250 ℃.
Before preferably in the temperature of substrate, from the growth temperature of N-shaped nitride semiconductor layer, reaching the growth temperature of active coating and the temperature of substrate at least one process before the growth temperature of active coating reaches the growth temperature of p-type nitride semiconductor layer, temperature control part makes the temperature of top board with the velocity variations below 1.5 ℃/secs.At this, so-called " making the temperature of top board ... change " means to make the temperature of top board raise or reduce.
Preferably, before the temperature of substrate reaches the growth temperature of N-shaped nitride semiconductor layer, temperature control part makes the temperature of top board raise with the speed below 1.0 ℃/secs.
Above-mentioned and other purpose, feature, aspect and the advantage of the present invention will become more clear by the following detailed description based on accompanying drawing.
The accompanying drawing explanation
Fig. 1 means a routine sectional view of existing MOCVD apparatus structure;
Fig. 2 means the growth time of relatively existing nitride semiconductor layer, the graphic representation of an example of the various variations of substrate temperature, top board temperature and purge gas flow;
Fig. 3 means a routine sectional view of nitride semiconductor luminescent element structure;
Fig. 4 means the pit number of each wafer measured by surface examining device and the graphic representation of the relation of measured fraction defective (%) by wafer tester;
Fig. 5 means a routine sectional view of epitaxially growing equipment structure of the present invention;
Fig. 6 means the graphic representation of relation of the fabrication yield of the temperature of top board and nitride semiconductor luminescent element;
The graphic representation of the relation of the temperature head between top board temperature when top board temperature when Fig. 7 means N-shaped nitride semiconductor layer and p-type nitride semiconductor growth layer and active coating growth and the fabrication yield of nitride semiconductor luminescent element;
Fig. 8 meaned with respect to the nitride semiconductor growth layer of the present invention time, the graphic representation of an example of the various variations of substrate temperature, top board temperature and the first gas flow.
Embodiment
Below, complete when of the present invention, after the item of examining explanation inventors of the present invention, the manufacture method of epitaxially growing equipment of the present invention and nitride semiconductor layer is described.
In order to form the luminescent layer of the luminous element formed by nitride-based III-V group iii v compound semiconductor material, usually use MOCVD(Metal Organic Chemical Vapor Deposition: metal organic chemical vapor deposition) method.In mocvd method, there is the organo-metallic raw material (for example trimethyl-gallium (TMG(Tri-Methyl Gallium)) or the trimethyl indium (TMI(Tri-Methyl Indium) that contain III family element)) unstripped gas with there is the raw material that contains V group element (ammonia (NH for example
3)) unstripped gas be imported into the inside of reaction chamber, carry out thermolysis near the substrate heated (for example, by sapphire crystal, SiC crystal or the crystal formation substrate of GaN).Thus, form the film crystal formation by the III-V compound semiconductor on the upper surface of substrate.This epitaxially growing equipment that utilizes this mocvd method, uses for the formation epitaxial is called the MOCVD device.
Fig. 1 means the sectional view of existing MOCVD apparatus structure one example.Insert gas introduction tube 111 in reaction chamber 110, the pedestal 120 with rotating mechanism 121 is set below reaction chamber 110, in the position of only leaving pedestal 120 certain distances, top board 113 is set.Be formed at the unstripped gas of the raw material of the film substrate 124 upper surfaces to the inside importing conduct of reaction chamber 110 from the unstripped gas supplying opening 111a that is formed at gas introduction tube 111, this unstripped gas flows between pedestal 120 and top board 113 towards venting port 112.Now, because be provided with top board 113 in the inside of reaction chamber 110, so can effectively on substrate 124 upper surfaces, guide unstripped gas 114.Also form the sweeping gas supplying opening 111b different from unstripped gas supplying opening 111a on gas introduction tube 111, import for preventing that reaction product is attached to the sweeping gas 115 of reaction chamber 110 inwalls from sweeping gas supplying opening 111b.Sweeping gas 115, to the upper side flow of top board 113, is discharged from venting port 112.
On pedestal 120 and then be provided with for keeping the substrate maintaining part 123 of substrate 124.Being provided with heater block below pedestal 120 is heating unit 122, thus, can heated substrates 124, make the epitaxial of wishing in the optimum response state.At this, as heater block, be the type of heating of heating unit 122, usually adopt: make heating unit 122 self-heatings by the resistive heating mode, thus the mode of heating base 120, substrate maintaining part 123 and substrate 124; Perhaps, by formed heating unit 122 by radio-frequency coil, pedestal 120 and substrate maintaining part 123 are carried out to high-frequency induction heating, thus the mode of heated substrates 124 etc.
Control the temperature of substrate 124 by the temperature of controlling pedestal 120.Specifically, be provided with thermopair 126 below pedestal 120, control the temperature of pedestal 120 by thermopair 126.The temperature of pedestal 120 is monitored by pyrometer 132, and this pyrometer 132 is configured on the viewport 131 that is formed at 130 tops, temperature observation hole.In addition, temperature observation hole 130 be temperature in order to observe substrate 124 and on top board 113 formed hole.
In the reaction chamber 110 shown in Fig. 1, the unstripped gas 114 imported from unstripped gas supplying opening 111a is thermal decomposited near substrate 124, thus, forms the film consisted of crystal on substrate 124 upper surfaces.Film is formed to the discharge 110 from venting port 112 to reaction chamber of inoperative unstripped gas.Yet, film is formed to the part of inoperative unstripped gas not to the outer discharge of reaction chamber 110, but be attached to the surface of pedestal 120, the surface of top board 113, the periphery of venting port 112 and the surface of substrate maintaining part 123 etc., form rudimentary reaction product.
Fig. 2 mean utilize existing mocvd method, in the situation that the nitride semiconductor luminescent element shown in shop drawings 3, with respect to the graphic representation of the various variations of substrate temperature (temperature of pedestal), top board temperature and the purge gas flow of growth time.In Fig. 2, L21 means the temperature variation of pedestal, and L22 means the temperature variation of top board, and L23 means the variation of purge gas flow.Fig. 3 means the sectional view of nitride semiconductor luminescent element structure one example.Below, utilize Fig. 2, an example of the manufacture method of the nitride semiconductor luminescent element shown in presentation graphs 3.
At first, in operation 201, the temperature that makes to form in advance the substrate 31 of the GaN layer (not shown) that thickness is 7 μ m is increased to 1050 ℃.
Then, in operation 202, make 32 growth of Si Doped n-type GaN layer on the upper surface of substrate 31.In operation 202, the temperature of substrate 31 is remained on to 1050 ℃.
Then, in operation 203, the temperature of substrate 31 is reduced to 800 ℃.
Then, in operation 204, make multiple quantum well light emitting layer (active coating) 33 growths that formed by InGaN layer and GaN layer on the upper surface of Si Doped n-type GaN layer 32.In operation 204, the temperature of substrate 31 is remained on to 800 ℃.
Then, in operation 205, the temperature of substrate 31 is increased to 1030 ℃.
Then, in operation 206, make successively Mg doped p type AlGaN layer 34 and 35 growth of Mg doped p type GaN layer on the upper surface of multiple quantum well light emitting layer 33.
Afterwards, in operation 207, the temperature of substrate 31 is reduced to room temperature.Like this, can obtain the wafer that makes Si Doped n-type GaN layer 32, multiple quantum well light emitting layer 33, Mg doped p type AlGaN layer 34 and Mg doped p type GaN layer 35 grow successively on the upper surface of substrate 31.
In above-mentioned operation 201～207, because do not change the flow (L23) of sweeping gas 115, the temperature of top board 113 changes (L22) along with the temperature variation of pedestal 120.
Then, by photolithography and dry etching method, the part of the grown layer of resulting wafer is carried out to etching, until expose the surface of Si Doped n-type GaN layer 32.
Then, on the surface of the Si Doped n-type GaN layer 32 exposed by etching, form N-shaped electrode 36, on the surface of Mg doped p type GaN layer 35, form p-type optically transparent electrode 37 and p-type electrode 38.N-shaped electrode 36, p-type optically transparent electrode 37 and p-type electrode 38 preferably form by evaporation.Afterwards, as long as wafer is divided into to chip, by resin, sealed, just can be accessed nitride semiconductor luminescent element.
Inventors of the present invention manufacture a plurality of wafers according to the method described above, and resulting wafer is divided into to chip, by resin, are sealed.Then, resulting nitride semiconductor luminescent element is carried out to Performance Evaluation, try to achieve the good article rate of each wafer.Like this, the yield rate of known each wafer is distributed between 70～90% unevenly.And, in the situation that each epitaxial process is tried to achieve to good article rate, also known its good article rate skewness.
In order to investigate the reason of each wafer or each epitaxially grown good article rate skewness, inventors of the present invention utilize surface examining device to investigate the number of defects of each wafer and the kind of defect.Fig. 4 means the pit number of each wafer of being measured by surface examining device and the graphic representation of the relation of measured fraction defective by wafer tester.At this, pit means that area is 1000 μ m
2the defect of left and right.According to the known pit number of Fig. 4, to fraction defective, be directly proportional.And then, by transmission electron microscope (TEM(Transmission Electron Microscope)) result of analyzing the cross section of these defect parts is, on the interface of the interface of the interface of substrate 31 and Si Doped n-type GaN layer 32, Si Doped n-type GaN layer 32 and multiple quantum well light emitting layer 33 and multiple quantum well light emitting layer 33 and Mg doped p type AlGaN layer 34, confirms to exist the defect caused because of dust.That is, known: cause the fabrication yield of nitride semiconductor luminescent element to worsen former be because dust, and the dust that causes fabrication yield to worsen generation before operation 201, in operation 201, operation 203 and operation 205 etc.Can think that dust results from while changing growth temperature or when changing substrate in the MOCVD device (following sometimes be designated as " while changing substrate ") etc.
Dust be the rudimentary reaction product on the surface that is attached to pedestal 120, the surface of top board 113, the periphery of venting port 112 and the surface of substrate maintaining part 123 etc. in the process of growth of nitride semiconductor layer or substrate come off while changing etc. and the object that disperses in the inside of reaction chamber 110.This dust is because occurring the film forming substandard products on the upper surface that drops down onto substrate, so can think the deterioration that can cause the nitride semiconductor luminescent element fabrication yield.In addition, because drop down onto the surface-area of the dust on upper surface of base plate, be 1000 μ m
2left and right, so be difficult to the Visual Confirmation dust.Accordingly, in order to improve the fabrication yield of nitride semiconductor luminescent element, need to prevent can not be visual dust.
Inventors of the present invention are in order to prevent dust, when each film forming, the surface of pedestal 120, the surface of top board 113, the periphery of venting port 112 and the surface of substrate maintaining part 123 are removed to the reaction product of attachment removal one by one, make consciously dust produce.Then utilize surface examining device, the upper surface of investigation substrate and be formed at the increase and decrease of the number of defects (following sometimes be designated as simply " number of defects ") on the surface etc. of film of substrate.Its result is, even (removing reaction product) cleaned in the surface of pedestal 120 and the surface of substrate maintaining part 123, also almost to can't see the increase and decrease of number of defects.Therefore, can think, from the surface of pedestal 120 and the dust that comes off of the surface of substrate maintaining part 123 less on the impact of nitride semiconductor luminescent element fabrication yield.
Then, if the periphery of venting port 112 is carried out to the cleaning of reaction product, before and after cleaning, can see the increase and decrease of number of defects.Therefore, can think that the dust come off from the periphery of venting port 112 is not little on the impact of the fabrication yield of nitride semiconductor luminescent element.But the necessity of cleaning venting port 112 peripheries is less., can think, only otherwise energetically the periphery of venting port 112 is carried out the cleaning of reaction product, the possibility that dust comes off from venting port 112 peripheries is extremely low for this reason.Therefore, can say that the dust come off from venting port 112 peripheries is less on the actual impact of nitride semiconductor luminescent element fabrication yield.
But, if the surface of top board 113 is carried out to the cleaning of reaction product, before and after cleaning, number of defects has greatly changed.According to this result, inventors of the present invention think that the major sources of the dust that the fabrication yield that makes nitride semiconductor luminescent element worsens is the reaction product that is attached to the surface of top board 113.So inventors of the present invention, in order to improve the fabrication yield of nitride semiconductor luminescent element, think and need to make reaction product be difficult to come off from the surface of top board 113, thereby complete the present invention.Below the manufacture method for epitaxially growing equipment of the present invention and nitride semiconductor luminescent element describes.
<structure of epitaxially growing equipment>
Fig. 5 means the sectional view of a routine structure of epitaxially growing equipment of the present invention.In addition, the dotted line in Fig. 5 means that structure unit is electrically connected to mutually.
Epitaxially growing equipment shown in Fig. 5 has: reaction chamber 510, substrate maintaining part 523, top board 513 and temperature control part 556.In reaction chamber 510, form film (not shown) on substrate 524.Substrate maintaining part 523 is arranged on reaction chamber 510 inside, is used for keeping substrate 524.Top board 513 be arranged on the substrate 524 that kept by substrate maintaining part 523 and and the inner-wall surface of substrate 524 reaction chamber 510 in opposite directions between, carry to the upper surface of substrate 524 unstripped gas that offers reaction chamber 510 inside.Temperature control part 556 is by controlling the flow of the first gas 515, and the temperature of the top board 513 during by film forming remains necessarily.
Preferably in reaction chamber 510, insert gas introduction tube 511, preferably on gas introduction tube 511, form unstripped gas supplying opening 511a and the first gas supply port 511b.The first gas 515 provided from the first gas supply source 555 preferably imports the inside from the first gas supply port 511b to reaction chamber 510, and flow between the preferred inner-wall surface at the reaction chamber 110 relative with top board 513 and top board 513, and discharge from venting port 512.The unstripped gas 514 provided from unstripped gas supply source 554 preferably imports the inside from unstripped gas supplying opening 511a to reaction chamber 510, preferably to flowing between pedestal 520 and top board 513, and discharges from venting port 512.
The temperature of substrate 524 is preferably controlled by the temperature of controlling pedestal 520, and thermopair 526 preferably is set below pedestal 520, and preferably by thermopair 526, controls the temperature of pedestal 520.The temperature of pedestal 520 is preferably monitored by the pyrometer 532 be configured on the viewport 531 that is formed at 530 tops, temperature observation hole.In addition, temperature observation hole 530 is temperature in order to observe substrate 524 and be formed on the hole of top board 513.
In the epitaxially growing equipment shown in Fig. 1, the temperature of top board 113 is not because controlled, so can change along with the temperature of substrate 124.If the temperature of substrate 124 raises, the temperature of top board 113 also raises, if the temperature of substrate 124 reduces, the temperature of top board 113 also reduces.Therefore, in the situation that top board 113 is different from the thermal expansivity of the reaction product that is attached to top board 113, thermal contraction, along with the temperature of top board 113 raises and thermal expansion occurs, occurs along with the temperature reduction of top board 113 in top board 113.And, if thermal expansion or thermal contraction occur top board 113, cause reaction product to come off from the surface of top board 113.
But, in the epitaxially growing equipment shown in Fig. 5, the temperature of top board 513 is remained when the film forming certain.Thus, the thermal expansion of top board 513 and thermal contraction in the time of can suppressing film forming, so the reaction product that can prevent from being attached on top board 513 comes off from the surface of top board 513.Therefore, as long as utilize the epitaxially growing equipment shown in Fig. 5 to manufacture nitride semiconductor luminescent element, just can prevent from producing the defect caused because of dust on the interface of substrate and film.For example, if the nitride semiconductor device that utilizes the epitaxially growing equipment manufacture shown in Fig. 5 to be formed by N-shaped nitride semiconductor layer, active coating and p-type nitride semiconductor layer, can prevent from producing on the interface of interface, N-shaped nitride semiconductor layer and the active coating of substrate and N-shaped nitride semiconductor layer and the interface of active coating and p-type nitride semiconductor layer etc. the defect caused because of dust.Therefore, can produce the nitride semiconductor luminescent element that fabrication yield is good.
The temperature head of so-called " temperature of top board 513 being remained when the film forming certain " top board 513 while meaning film forming remains on below 150 ℃.The temperature head of the top board 513 during film forming preferably remains on below 100 ℃ by temperature control part 556, and then preferably remains 0 ℃.Because the temperature head of top board during film forming 513 is more little, more can suppress littlely by the thermal shrinking quantity of the thermal expansion amount of top board 513 or top board 513, so can prevent that the reaction product that is attached to top board 513 from coming off from the surface of top board 513, thereby improve the fabrication yield of nitride semiconductor luminescent element.
On the other hand, if the temperature head of top board during film forming surpasses 150 ℃,, because can not control littlely by the thermal shrinking quantity of the thermal expansion amount of top board or top board, so be attached to the reaction product of top board, be easy to come off from the surface of top board.Moreover, and if the temperature head of top board during film forming surpass 150 ℃, because the temperature of top board is low, so cause being attached to the crystallinity of the reaction product on top board surface, reduce, accordingly, reaction product also is easy to come off from the surface of top board.
The temperature of top board 513 remains necessarily for by film forming the time, and temperature control part 556 is preferably controlled the flow of the first gas 515 according to the temperature of top board 513.Specifically, because can think when the temperature that has reduced substrate 524 (being actually the temperature of substrate maintaining part 523), the temperature of top board 513 also reduces and reduces along with the temperature of substrate 524, so preferably reduce the flow of the first gas 515.And, because can think when having raise the temperature of substrate 524, the temperature of top board 513 also raises and raises along with the temperature of substrate 524, so preferably increase the flow of the first gas 515.Thus, be easy to when film forming, the temperature of top board 513 be remained necessarily.Therefore, further prevent because dust produces defect, so can further improve the fabrication yield of nitride semiconductor luminescent element.
The first gas, so long as the gas that growth of nitride semiconductor layer is not produced to baneful influence gets final product, is not limited, and for example, can be H
2gas, N
2gas or NH
3gas etc. can be also to have mixed H
2gas, N
2gas and NH
3the mixed gas of the two or more gases in gas.But, if use H
2gas is as the first gas, the temperature of controlroof 513 as desired.Therefore, the first gas is preferably H
2gas.
The flow of the first gas 515 is preferably determined according to the volume in the zone clipped by the sidewall with top board 513 reaction chamber 510 in opposite directions and top board 513 or the kind of the first gas 515 etc., is not limited to the described numerical value of embodiment described later.And, when the temperature of substrate 524 changes, the flow of the first gas 515 preferably determines according to the temperature variation of substrate 524, the fluctuations in discharge amount of the first gas 515 be preferably flow before changing ± 10%, and then be preferably flow before changing ± 5%.
If 550 ℃ of the temperature deficiencies of top board 513, the reaction product that is attached to top board 513 surfaces is easy to form needle-like crystal.Therefore, top board 513 is not only along with temperature variation generation thermal expansion and the thermal contraction of top board 513, and gas (just the first gas also do not comprise unstripped gas) even to the feed rate of reaction chamber 510, slight variations only occurs, reaction product also is easy to come off from the surface of top board 513.But, if the temperature of top board 513 is more than 550 ℃, the reaction product that is attached to top board 513 surfaces is difficult to form needle-like crystal, if the temperature of top board 513 is more than 600 ℃, can suppress to be attached to the reaction product formation needle-like crystal on top board 513 surfaces.Therefore, can further prevent that reaction product from coming off from the surface of top board 513, so can further improve the fabrication yield of nitride semiconductor luminescent element.
If the temperature of top board 513 is below 250 ℃, on the surface of top board 513, be difficult to the attachment reaction product.Inventors of the present invention confirm, if the temperature of top board 513 is below 250 ℃, the surface of top board 513 is only dirty must the blackout everywhere, if the temperature of top board 513 is below 200 ℃, and the attachment reaction product not almost on the surface of top board 513.If when film forming, the temperature of top board 513 is remained on below 250 ℃, can prevent that reaction product is attached to the surface of top board 513, so can stop reaction product to come off from the surface of top board 513.Therefore can further improve the fabrication yield of nitride semiconductor luminescent element.
Inventors of the present invention change the temperature of top board 513 when film forming, obtain the fabrication yield of nitride semiconductor luminescent element, and its result as shown in Figure 6.Known according to Fig. 6, if the temperature of top board 513 is lower than 550 ℃ when film forming, fabrication yield skewness, when when film forming, the temperature of top board 513 is 350 ℃～500 ℃, fabrication yield is distributed between 70%～90% unevenly, becomes unstable.During film forming, the temperature of top board 513 be take 300 ℃ as boundary, and fabrication yield starts to recover, if the temperature of top board 513 is below 250 ℃ when film forming, fabrication yield is stabilized in 95% left and right.
Below, utilize the epitaxially growing equipment shown in Fig. 5, the situation that forms successively N-shaped nitride semiconductor layer, active coating and p-type nitride semiconductor layer on the upper surface of substrate of take is example, further specifically describes the control that temperature control part 556 carries out.During temperature control part 556 preferred at least one deck in forming N-shaped nitride semiconductor layer and p-type nitride semiconductor layer, the temperature of top board 513 is remained on more than 550 ℃, preferably when forming active coating, the temperature of top board 513 is remained on below 250 ℃.Specifically, during at least one deck in forming N-shaped nitride semiconductor layer and p-type nitride-based semiconductor, temperature control part 556 preferably make the flow of the first gas 515 be 0.4slm above, below 5.0slm, and then be preferably 0.4slm above, below 3.0slm.When forming active coating, it is more than 5.0slm, below 25.0slm that temperature control part 556 preferably makes the flow of the first gas 515, and then more than being preferably 7.0slm, below 25.0slm.Thus, when forming at least one deck of N-shaped nitride semiconductor layer and p-type nitride semiconductor layer, can prevent that reaction product from coming off from the surface of top board 513, when forming active coating, can prevent that reaction product is attached to the surface of top board 513.Therefore, can further improve the fabrication yield of nitride semiconductor luminescent element.
Poor (following sometimes be designated as " temperature head " of the temperature of the top board 513 when the temperature of the top board 513 when inventors of the present invention change N-shaped nitride semiconductor layer and p-type nitride semiconductor growth layer and active coating growth, be designated as " temperature head " in Fig. 7), try to achieve the fabrication yield of nitride semiconductor luminescent element, its result as shown in Figure 7.Known according to Fig. 7, if temperature head in 150 ℃, preferably temperature head is below 100 ℃, fabrication yield is more than 90%, more stable.
; in Fig. 7; during the growth of known in the situation that n-GaN layer (example that n-GaN is the N-shaped nitride semiconductor layer), the temperature of top board is 700 ℃ (being designated as " temperature of top board is 700 ℃ " in Fig. 7), and when temperature head is above 450 ℃ of left and right, fabrication yield has the tendency of recovery.And during known in the situation that n-GaN layer growth, the temperature of top board is 900 ℃ (being designated as " temperature of top board is 900 ℃ " in Fig. 7), when temperature head is above 650 ℃ of left and right, fabrication yield has the tendency of recovery.In the time of can thinking because of the active coating growth in above-mentioned arbitrary situation, the temperature of top board 513 is below 250 ℃, so be difficult to the attachment reaction product when active coating is grown on top board 513.Known according to the above description, in the situation that temperature head, higher than 0 ℃, is below 150 ℃ if do not make temperature head, will cause the crystallinity of reaction product to reduce, so thermal expansion and the thermal contraction because of top board causes reaction product to come off sometimes.But, if be more than 450 ℃ by making temperature head, the temperature that makes top board 513 is below 250 ℃, fabrication yield will improve.
Temperature control part 556 so preferably in the temperature (being actually the temperature of substrate maintaining part 523) of substrate 524, from the growth temperature of N-shaped nitride semiconductor layer, reach the growth temperature of active coating before and the temperature of substrate 524 at least one situation before the growth temperature of active coating reaches the growth temperature of p-type nitride semiconductor layer, the temperature of top board 513 is changed (raise or reduce) with the speed below 1.5 ℃/secs, further preferably make the temperature of top board 513 change with the speed more than 0.2 ℃/sec, below 1.2 ℃/secs.Specifically, reach the growth temperature of active coating from the growth temperature of N-shaped nitride semiconductor layer in the temperature of substrate 524 before and the temperature of substrate 524 at least one situation before the growth temperature of active coating reaches the growth temperature of p-type nitride semiconductor layer, temperature control part 556 preferably make the first gas 515 flow gather way or minimizing speed is the 0.01slm/ second of above, 1.0slm/ below second, and then be preferably 0.05slm/ second above, 0.5slm/ below second.Thus, even the temperature of substrate 524 changes, also can make top board 513 that thermal expansion or thermal contraction occur lentamente, so can further prevent that reaction product from coming off from the surface of top board 513.Therefore, can further improve the fabrication yield of nitride semiconductor layer luminous element.
It is below 1.0 ℃/secs that temperature control part 556 preferably made the heat-up rate of top board 513 before the temperature of substrate 524 reaches the growth temperature of N-shaped nitride semiconductor layer, and then preferably to make the heat-up rate of top board 513 be more than 0.05 ℃/sec, below 0.5 ℃/sec.Specifically, before the temperature of substrate 524 reaches the growth temperature of N-shaped nitride semiconductor layer, it is more than 0.4slm, below 5.0slm that temperature control part 556 preferably makes the flow of the first gas 515, and then more than being preferably 0.8slm, below 3.0slm.Thus, even the temperature of substrate 524 raises, also can make top board 513 that thermal expansion occurs lentamente, so reaction product is difficult to come off from the surface of top board 513.Therefore, can further improve the fabrication yield of nitride semiconductor luminescent element.
As mentioned above, in the epitaxially growing equipment shown in Fig. 5, can prevent coming off of when film forming reaction product, so can prevent from producing dust (reason of defect) when film forming.Therefore, if use the epitaxially growing equipment shown in Fig. 5, just can produce the nitride semiconductor luminescent element that fabrication yield is good.
In addition, epitaxially growing equipment of the present invention is not limited to the epitaxially growing equipment shown in Fig. 5.For example also can pass through different gas introduction tubes, to supply raw materials in reaction chamber 510 gas 514 and the first gas 515.And the method for the temperature of the temperature of monitoring substrate 524 or top board 513 also is not limited to aforesaid method.
<manufacture method of nitride semiconductor luminescent element>
The graphic representation of the variation of growth time, substrate temperature (temperature of pedestal), top board temperature and the first gas flow when Fig. 8 means with respect to the epitaxially growing equipment manufacture nitride semiconductor luminescent element utilized shown in Fig. 5.In Fig. 8, L81 means the temperature variation of pedestal, and L82 means the temperature variation of top board, and L83 means the fluctuations in discharge of the first gas 515.Below, the example as the manufacture method of nitride semiconductor luminescent element, illustrate the method that forms successively N-shaped nitride semiconductor layer, active coating and p-type nitride semiconductor layer on the upper surface of substrate 524.
In operation 801, before the temperature of substrate 524 reaches the growth temperature of N-shaped nitride semiconductor layer, by heating unit 522, the temperature of substrate 524 is raise.Now, temperature control part 556 is preferably below 1.0 ℃/secs for the heat-up rate of the top board 513 that makes to receive from pyrometer 532, and then is preferably more than 0.05 ℃/sec, below 0.5 ℃/sec, controls the flow of the first gas 515.Specifically, temperature control part 556 is preferred for the flow that makes the first gas 515 is to control the first gas supply source 555 more than 0.4slm, below 5.0slm, and then for the flow that makes the first gas 515, is preferably to control the first gas supply source 555 more than 0.8slm, below 3.0slm.Thus, top board 513 is along with thermal expansion occurs lentamente in the temperature rising of substrate 524.Therefore, even reaction product is attached in the situation on surface of top board 513, also can prevent that this reaction product from coming off from the surface of top board 513.
In operation 802, make the N-shaped nitride semiconductor growth layer on the upper surface of substrate 524.Now, by heating unit 522, the temperature of substrate 524 is remained necessarily.And temperature control part 556 is certain and control the flow of the first gas 515 for the temperature of the top board 513 that will receive from pyrometer 532 remains.Thus, can prevent that thermal expansion and thermal contraction occur top board 513 in operation 802, so, can prevent that reaction product from coming off from the surface of top board 513.
For example, temperature control part 556 is preferred for the temperature that makes top board 513 is to control the flow of the first gas 515 more than 550 ℃, and then for the temperature that makes top board 513, is preferably to control the flow of the first gas 515 more than 600 ℃.Its reason is as the explanation described in above-mentioned<structure of epitaxially growing equipment>.More particularly, temperature control part 556 is preferred for the flow that makes the first gas 515 is to control the first gas supply source 555 more than 0.4slm, below 5.0slm, and then for the flow that makes the first gas 515, is preferably to control the first gas supply source 555 more than 0.4slm, below 3.0slm.
As an other example, temperature control part 556 is preferred for the temperature that makes top board 513 is to control the flow of the first gas 515 below 250 ℃, and then for the temperature that makes top board 513, is preferably to control the flow of the first gas 515 below 200 ℃.Its reason is as in above-mentioned<structure of epitaxially growing equipment>described explanation.More particularly, temperature control part 556 is to control the first gas supply source 555 more than 5.0slm, below 25.0slm for the flow that makes the first gas 515, and then for the flow that makes the first gas 515, is preferably to control the first gas supply source 555 more than 7.0slm, below 25.0slm.
In operation 803, before the temperature of substrate 524 reaches the growth temperature of active coating, reduce the temperature of substrate 524.Now, temperature control part 556 is preferably controlled the flow of the first gas 515 for the temperature of the top board 513 that makes to receive from pyrometer 532 remains certain.Specifically, temperature control part 556 is that 0.01slm/ more than second, 1.0slm/ control the first gas supply source 555 below second for the minimizing speed of the flow that makes the first gas 515, and then for the minimizing speed of the flow that makes the first gas 515, is preferably that 0.05slm/ more than second, 0.5slm/ control the first gas supply source 555 below second.Thus, can suppress top board 513 along with the temperature reduction of substrate 524 and thermal contraction occurs, so can prevent that reaction product from coming off from the surface of top board 513.
Although not shown in Fig. 8, but in operation 803, temperature control part 556 can be also below 1.5 ℃/secs for the cooling rate of the top board 513 that makes to receive from pyrometer 532, be preferably more than 0.01 ℃/sec, control the flow of the first gas 515 below 1.0 ℃/secs.Specifically, temperature control part 556 can be that 0.01slm/ more than second, 1.0slm/ control the first gas supply source 555 below second for the minimizing speed of the flow that makes the first gas 515, for the minimizing speed of the flow that makes the first gas 515, is preferably that 0.05slm/ more than second, 0.5slm/ control the first gas supply source 555 below second.In this case, thermal contraction also can occur along with the temperature reduction of substrate 524 in top board 513 lentamente.Therefore, can prevent that reaction product from coming off from the surface of top board 513.
In operation 804, make the active coating growth on the upper surface of N-shaped nitride semiconductor layer.Now, by heating unit 522, the temperature of substrate 524 is remained necessarily.And temperature control part 556 is certain and control the flow of the first gas 515 for the temperature of the top board 513 that makes to receive from pyrometer 532 remains.Thus, can prevent that thermal expansion and thermal contraction occur top board 513 in operation 804, so can prevent that reaction product from coming off from the surface of top board 513.
For example, temperature control part 556 is preferred for the temperature that makes top board 513 is to control the flow of the first gas 515 more than 550 ℃, and then for the temperature that makes top board 513, is preferably to control the flow of the first gas 515 more than 600 ℃.Its reason is identical with operation 802.More particularly, temperature control part 556 is preferred for the flow that makes the first gas 515 is to control the first gas supply source 555 more than 0.4slm, below 5.0slm, and then for the flow that makes the first gas 515, is preferably to control the first gas supply source 555 more than 0.4slm, below 3.0slm.
As an other example, temperature control part 556 is preferred for the temperature that makes top board 513 is to control the flow of the first gas 515 below 250 ℃, and then for the temperature that makes top board 513, is preferably to control the flow of the first gas 515 below 200 ℃.Its reason is identical with operation 802.More particularly, temperature control part 556 is preferred for the flow that makes the first gas 515 is to control the first gas supply source 555 more than 5.0slm, below 25.0slm, and then for the flow that makes the first gas 515, is preferably to control the first gas supply source 555 more than 7.0slm, below 25.0slm.
In operation 805, before the temperature of substrate 524 reaches the growth temperature of p-type nitride semiconductor layer, by heating unit 522, the temperature of substrate 524 is raise.Now, temperature control part 556 is preferably controlled the flow of the first gas 515 for the temperature of the top board 513 that makes to receive from pyrometer 532 remains certain.Specifically, temperature control part 556 for the flow that makes the first gas 515 gather way as 0.01slm/ more than second, 1.0slm/ controls the first gas supply source 555 below second, and then preferably for the flow that makes the first gas 515 gather way as 0.05slm/ more than second, 0.5slm/ controls the first gas supply source 555 below second.Thus, can suppress top board 513 along with the temperature rising of substrate 524 and thermal expansion occurs, so can prevent that reaction product from coming off from the surface of top board 513.
Although not shown in Fig. 8, but in operation 805, temperature control part 556 can be also below 1.5 ℃/secs for the heat-up rate of the top board 513 that makes to receive from pyrometer 532, be preferably more than 0.2 ℃/sec, control the flow of the first gas 515 below 1.2 ℃/secs.Specifically, temperature control part 556 can for the flow that makes the first gas 515 gather way as 0.01slm/ more than second, 1.0slm/ controls the first gas supply source 555 below second, preferably for the flow that makes the first gas 515 gather way as 0.05slm/ more than second, 0.5slm/ controls the first gas supply source 555 below second.Thus, top board 513 is along with the temperature of substrate 524 raises and thermal expansion occurs lentamente.Therefore, can prevent that reaction product from coming off from the surface of top board 513.
In operation 806, make the p-type nitride semiconductor growth layer on the upper surface of active coating.Now, by heating unit 522, the temperature of substrate 524 is remained necessarily.And temperature control part 556 is certain and control the flow of the first gas 515 for the temperature of the top board 513 that makes to receive from pyrometer 532 remains.Thus, can prevent that thermal expansion and thermal contraction occur top board 513 in operation 806, so can prevent that reaction product from coming off from the surface of top board 513.
For example, temperature control part 556 is preferred for the temperature that makes top board 513 is to control the flow of the first gas 515 more than 550 ℃, and then for the temperature that makes top board 513, is preferably to control the flow of the first gas 515 more than 600 ℃.Its reason is identical with operation 802.More particularly, temperature control part 556 is preferred for the flow that makes the first gas 515 is to control the first gas supply source 555 more than 0.4slm, below 5.0slm, and then for the flow that makes the first gas 515, is preferably to control the first gas supply source 555 more than 0.4slm, below 3.0slm.
As an other example, temperature control part 556 is preferred for the temperature that makes top board 513 is to control the flow of the first gas 515 below 250 ℃, and then for the temperature that makes top board 513, is preferably to control the flow of the first gas 515 below 200 ℃.Its reason is identical with operation 802.More particularly, temperature control part 556 is preferred for the flow that makes the first gas 515 is to control the first gas supply source 555 more than 5.0slm, below 25.0slm, and then for the flow that makes the first gas 515, is preferably to control the first gas supply source 555 more than 7.0slm, below 25.0slm.
In operation 807, make the temperature of substrate 524 be reduced to room temperature.Now, preferably make the temperature of top board 513 also be reduced to room temperature.Specifically, preferably make the temperature of top board 513 reduce lentamente, and needn't change the flow of the first gas 515.Obtain therefrom wafer.
Adopt the method for photoetching and dry-etching, etched wafer, until expose the surface of N-shaped nitride semiconductor layer.
Form the N-shaped electrode on the surface of the N-shaped nitride semiconductor layer exposed by etching, form optically transparent electrode and p-type electrode on the upper surface of p-type nitride semiconductor layer.Then wafer is divided into to single chip, is sealed by resin.Thus, obtain nitride semiconductor luminescent element.
As mentioned above, in the manufacture method of the nitride semiconductor luminescent element shown in Fig. 8, can prevent that when film forming reaction product from coming off.Therefore, can prevent from producing the dust that causes defect when film forming.Therefore, can produce the nitride semiconductor luminescent element that fabrication yield is good.
In addition, the manufacture method of nitride semiconductor luminescent element of the present invention is not limited to the method shown in Fig. 8.For example, form again the N-shaped nitride semiconductor layer after also can forming the p-type nitride semiconductor layer.The nitride semi-conductor material that forms respectively N-shaped nitride semiconductor layer, active coating and p-type nitride-based semiconductor is not limited to the described material of embodiment described later.
And temperature control part 556 is preferably necessarily controlled the flow of the first gas 515 for the temperature that makes top board 513 in operation 802～806.Thus, can both suppress top board 513 in operation 802～806 thermal expansion and thermal contractions occur, thus can the inhibited reaction product come off.
In addition, temperature control part 556 preferably makes the flow of the first gas 515 certain in other operations beyond operation 803 and 805.It is complicated that the control that thus, can prevent 556 pairs of the first gas supply sources 555 of temperature control part becomes.
Example
Below, illustrate in greater detail the present invention by embodiment, but the invention is not restricted to this.
<the first embodiment>
In the first embodiment, utilize the epitaxially growing equipment shown in Fig. 5, according to the nitride semiconductor luminescent element shown in the method shop drawings 3 shown in Fig. 8, obtain its fabrication yield.
In operation 801, will make in advance the temperature of the substrate 31 that the GaN layer growth is thickness 7 μ m be increased to 1050 ℃.Now, the temperature that makes top board 513 is increased to 700 ℃ with the speed of 1.5 ℃/secs.
In operation 802, make 32 growth of Si Doped n-type GaN layer on the upper surface of substrate 31.In operation 802, mobile H between the inner-wall surface by making the reaction chamber 510 relative with top board 513 and top board 513
2the flow of gas (the first gas) is the 2slm left and right, and the temperature of top board 513 is controlled to fixing 700 ℃.
In operation 803, the temperature of substrate 31 is reduced to 800 ℃.And, make H
2the flow of gas reduces to 1slm lentamente from 2slm, and the temperature of controlroof 513 makes it remain on 700 ℃ and do not change.
In operation 804, make active coating 33 growths that form by InGaN layer and GaN layer, that there is multi-quantum pit structure on the upper surface of Si Doped n-type GaN layer 32.In operation 804, by making H
2the flow of gas is the 1slm left and right, and the temperature of controlroof 513 is fixing 700 ℃.
In operation 805, the temperature of substrate 31 is increased to 1030 ℃.And, by H
2the flow of gas increases to 1.8slm gradually from 1slm, and the temperature of controlroof 513 makes it still remain 700 ℃ and do not change.
In operation 806, make successively Mg doped p type AlGaN layer 34 and 35 growth of Mg doped p type GaN layer on the upper surface of active coating 33.In operation 806, by making H
2the flow of gas is the 1.8slm left and right, and the temperature of top board 513 is controlled to fixing 700 ℃.
In operation 807, the temperature of substrate 31 is reduced to room temperature.In operation 807, do not change H
2the flow of gas, be still 1.8slm, and the temperature of top board 513 is cooled to room temperature gradually.Obtain like this wafer.
In addition, in operation 801～807, by temperature control part 556, control H
2the flow of gas.
Adopt photolithography and dry etching method, the part of etching grown layer, the surface of exposing Si Doped n-type GaN layer 32.
On the surface of the Si Doped n-type GaN layer 32 exposed by etching, N-shaped electrode 36 is set, makes successively p-type optically transparent electrode 37 and p-type electrode 38 evaporations on the surface of Mg doped p type GaN layer 35.Then, wafer is divided into to chip, is sealed by resin.So just can obtain nitride semiconductor luminescent element.Resulting nitride semiconductor luminescent element is carried out to Performance Evaluation, obtain the good article rate of each wafer, make fabrication yield be stabilized in 92% left and right.
<the second embodiment>
In a second embodiment, control H when in operation 803, the temperature of substrate 31 being reduced to 800 ℃
2the flow of gas be 1.5slm and in operation 804 temperature of controlroof 513 be beyond 550 ℃, other situations are all identical with above-mentioned the first embodiment, thereby produce nitride semiconductor luminescent element.Resulting nitride semiconductor luminescent element is carried out to Performance Evaluation, obtain the good article rate of each wafer, make fabrication yield be stabilized in 90% left and right.
<the 3rd embodiment>
Utilizing surface examining device and TEM(Transmission Electron Microscope: while transmission electron microscope) resolving in above-mentioned the first～the second embodiment resulting nitride semiconductor luminescent element, observe the defect produced because of dust on the interface of substrate 31 and Si Doped n-type GaN layer 32.Accordingly, can think and to starting to form between Si Doped n-type GaN layer 32, also can because of the thermal expansion of top board 513, cause reaction product to be forced to from the surfacial spalling of top board 513 at the room temperature state from growth starts.
In the 3rd embodiment, make when in operation 801, the temperature of substrate 31 being increased to 1050 ℃ the heat-up rate of top board 513 is 1.0 ℃/secs, other situations are all identical with above-mentioned the first embodiment, thereby produce nitride semiconductor luminescent element.Resulting nitride semiconductor luminescent element is carried out to Performance Evaluation, obtain the good article rate of each wafer, make fabrication yield be stabilized in 95% left and right.
And, when resulting nitride semiconductor luminescent element is carried out to tem observation, the known number of defects produced because of dust on the interface of substrate 31 and Si Doped n-type GaN layer 32 has reduced.
In addition, the heat-up rate of inventors of the present invention substrate 31 in making operation 801 is more than 1.5 ℃/secs, manufacture nitride semiconductor luminescent element, and utilize surface examining device, to the number of defects on the interface of the substrate 31 of resulting nitride semiconductor luminescent element and Si Doped n-type GaN layer 32, (surface-area is 1000 μ m
2left and right) investigate.Like this, with the heat-up rate that makes substrate 31 in operation 801, be that 1.0 ℃/secs of situations of manufacturing nitride semiconductor luminescent element are compared, known number of defects has increased.Thus, can think and to starting to form between Si Doped n-type GaN layer 32, also can cause reaction product to be forced to from the surfacial spalling of top board 513 because thermal expansion occurs top board 513 at the room temperature state from growth starts.Accordingly, can think, be below 1.0 ℃/secs if make the heat-up rate of substrate 31 in operation 801, and thermal expansion occurs top board 513 lentamente, and its result is that reaction product is difficult to come off from the surface of top board 513.
<the 4th embodiment>
During temperature when the temperature change except the temperature making substrate 31 during from active coating 33 growth is Mg doped p type AlGaN layer 34 and 35 growth of Mg doped p type GaN layer, (operation 805) changed into below 1.5 ℃/secs by the heat-up rate of top board 513 from 2.0 ℃/secs, other situations are identical with above-mentioned the second embodiment, thereby produce nitride semiconductor luminescent element.Resulting nitride semiconductor luminescent element is carried out to Performance Evaluation, obtain the good article rate of each wafer, make fabrication yield be stabilized in 92% left and right.
And, when utilizing surface examining device to resolve resulting nitride semiconductor luminescent element, the dust number on known each interface is less than the situation of above-mentioned the second embodiment.As its reason, can think because thermal expansion occurs top board 513 lentamente, thereby make reaction product be difficult to come off.
<the 5th embodiment>
During temperature when the temperature change except the temperature making substrate 31 during from Si Doped n-type GaN layer 32 growth is active coating 33 growth, (operation 803) changed into below 1.5 ℃/secs by the cooling rate of top board 513 from 2.0 ℃/secs, other situations are identical with above-mentioned the second embodiment, thereby produce nitride semiconductor luminescent element.Resulting nitride semiconductor luminescent element is carried out to Performance Evaluation, obtain the good article rate of each wafer, make fabrication yield be stabilized in 95% left and right.
And, when utilizing surface examining device to resolve resulting nitride semiconductor luminescent element, the dust number on known each interface is less than the situation of above-mentioned the second embodiment.As its reason, can think because thermal contraction occurs top board 513 lentamente, thereby make reaction product be difficult to come off.
<the 6th embodiment>
Except when Si Doped n-type GaN layer 32 growth (operation 802) to make the temperature of top board 513 be 900 ℃ and (operation 804) controlled the temperature of top board 513 to be 150 ℃ during in active coating 33 growth, other situations are identical with above-mentioned the second embodiment, thereby produce nitride semiconductor luminescent element.Resulting nitride semiconductor luminescent element is carried out to Performance Evaluation, obtain the good article rate of each wafer, make fabrication yield be stabilized in 90% left and right.As its reason, can think because reaction product is difficult to be attached to the surface of top board 113 when active coating 33 growth.
<the 7th embodiment>
While except the temperature by substrate 31, being increased to 1050 ℃ (operation 801) to make the heat-up rate of top board 513 be 1.0 ℃/secs, during temperature when the temperature change in the temperature by substrate 31 during from active coating 33 growth is Mg doped p type AlGaN layer 34 and 35 growth of Mg doped p type GaN layer (operation 805) to make the heat-up rate of top board 513 be 1.5 ℃/secs, and (operation 803) makes beyond the cooling rate of top board 513 is 1.5 ℃/secs during the temperature when temperature change during from Si Doped n-type GaN layer 32 growth is active coating 33 growth in the temperature by substrate 31, other situations are identical with above-mentioned the 4th embodiment, thereby produce nitride semiconductor luminescent element.Resulting nitride semiconductor luminescent element is carried out to Performance Evaluation, obtain the good article rate of each wafer, make fabrication yield be stabilized in 95% left and right.As its reason, in the time of can thinking because of the active coating growth, the adhesion amount of reaction product reduces, and suppresses top board 513 generation thermal expansion and thermal contractions.
Although above embodiments of the present invention are illustrated, this disclosed embodiment is all illustration and should not be regarded as restriction in all respects.Scope of the present invention is to be meaned by the claim scope, and purpose is to comprise the implication that is equal to the claim scope and all changes in scope.
Claims (11)
1. an epitaxially growing equipment, is characterized in that having: the reaction chamber that is used for forming film on substrate;
Be arranged at the inside of described reaction chamber, be used for keeping the substrate maintaining part of described substrate;
Top board, its be arranged on the substrate that kept by described substrate maintaining part and and the inner-wall surface of described substrate described reaction chamber in opposite directions between, be used for carrying the unstripped gas that offers described reaction chamber inside on described substrate;
Temperature control part, its by be controlled at and the described inner-wall surface of described top board described reaction chamber in opposite directions and described top board between the flow of the first gas of flowing, the temperature of the described top board in the time of will on described substrate, forming described film remains necessarily.
2. epitaxially growing equipment as claimed in claim 1, it is characterized in that, at described reaction chamber, form and be used for to the unstripped gas supplying opening of the described unstripped gas of internal feed of described reaction chamber and be used for to the outside venting port of discharging the gas of described reaction chamber inside of described reaction chamber;
Described substrate maintaining part can be rotated;
Be used for heating the heating unit of described substrate in a side setting contrary with described top board with respect to described substrate maintaining part.
3. the manufacture method of a nitride semiconductor luminescent element, is characterized in that, comprises and utilize epitaxially growing equipment claimed in claim 1, forms the operation of nitride semiconductor layer on described substrate.
4. the manufacture method of nitride semiconductor luminescent element as claimed in claim 3, it is characterized in that, described temperature control part is in the operation that forms described nitride semiconductor layer, reduce the flow of described the first gas when the temperature of described substrate maintaining part reduces, increase the flow of described the first gas when the temperature of described substrate holding plate raises.
5. the manufacture method of nitride semiconductor luminescent element as claimed in claim 3, is characterized in that, in the operation that forms described nitride semiconductor layer, described temperature control part remains on the temperature of described top board more than 550 ℃.
6. the manufacture method of nitride semiconductor luminescent element as claimed in claim 3, is characterized in that, in the operation that forms described nitride semiconductor layer, described temperature control part remains on the temperature of described top board below 250 ℃.
7. the manufacture method of nitride semiconductor luminescent element as claimed in claim 3, it is characterized in that, the operation that forms described nitride semiconductor layer comprises: form the operation of N-shaped nitride semiconductor layer on described substrate, form the operation of active coating on described N-shaped nitride semiconductor layer, form the operation of p-type nitride semiconductor layer on described active coating.
8. the manufacture method of nitride semiconductor luminescent element as claimed in claim 7, it is characterized in that, described temperature control part is in the operation that forms described N-shaped nitride semiconductor layer and at least one operation in forming the operation of described p-type nitride semiconductor layer, the temperature of described top board is remained on more than 550 ℃, in the operation that forms described active coating, the temperature of described top board is remained on below 250 ℃.
9. the manufacture method of nitride semiconductor luminescent element as claimed in claim 7, it is characterized in that, described temperature control part reaches the growth temperature of described active coating from the growth temperature of described N-shaped nitride semiconductor layer in the temperature of described substrate before and the temperature of described substrate at least one process before the growth temperature of described active coating reaches the growth temperature of described p-type nitride semiconductor layer, make the temperature of described top board with the velocity variations below 1.5 ℃/secs.
10. the manufacture method of nitride semiconductor luminescent element as claimed in claim 7, it is characterized in that, described temperature control part, before the temperature of described substrate reaches the growth temperature of described N-shaped nitride semiconductor layer, makes the temperature of described top board raise with the speed below 1.0 ℃/secs.
11. the manufacture method of nitride semiconductor luminescent element as claimed in claim 3, is characterized in that, described the first gas is H
2gas, N
2gas and NH
3at least one gas in gas.
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| JP2012-126012 | 2012-06-01 | ||
| JP2012126012A JP5940375B2 (en) | 2012-06-01 | 2012-06-01 | Vapor growth apparatus and method for manufacturing nitride semiconductor light emitting device |
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| CN106498371A (en) * | 2015-09-03 | 2017-03-15 | 株式会社岛津制作所 | Film formation device and film build method |
| CN106796872A (en) * | 2014-09-05 | 2017-05-31 | 住友化学株式会社 | Semiconductor- fabricating device and semiconductor making method |
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| DE102018121854A1 (en) * | 2018-09-07 | 2020-03-12 | Aixtron Se | Process for setting up or operating a CVD reactor |
| JP7137539B2 (en) * | 2019-08-06 | 2022-09-14 | 日機装株式会社 | Manufacturing method of nitride semiconductor light emitting device |
| CN114318543A (en) * | 2021-12-28 | 2022-04-12 | 江苏布里其曼科技股份有限公司 | System and method for manufacturing semipolar gallium nitride epitaxial layer structure |
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| CN106796872A (en) * | 2014-09-05 | 2017-05-31 | 住友化学株式会社 | Semiconductor- fabricating device and semiconductor making method |
| CN106796872B (en) * | 2014-09-05 | 2019-07-16 | 住友化学株式会社 | Semiconductor manufacturing apparatus and semiconductor making method |
| CN106498371A (en) * | 2015-09-03 | 2017-03-15 | 株式会社岛津制作所 | Film formation device and film build method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103451725B (en) | 2016-04-20 |
| JP5940375B2 (en) | 2016-06-29 |
| JP2013251442A (en) | 2013-12-12 |
| TWI514623B (en) | 2015-12-21 |
| TW201401557A (en) | 2014-01-01 |
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