CN109837522A - A kind of forming diamond-like carbon film on surface of infrared optical element coating process - Google Patents
A kind of forming diamond-like carbon film on surface of infrared optical element coating process Download PDFInfo
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- CN109837522A CN109837522A CN201711201138.8A CN201711201138A CN109837522A CN 109837522 A CN109837522 A CN 109837522A CN 201711201138 A CN201711201138 A CN 201711201138A CN 109837522 A CN109837522 A CN 109837522A
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Abstract
The present invention relates to a kind of forming diamond-like carbon film on surface of infrared optical element coating process, a kind of forming diamond-like carbon film on surface of infrared optical element coating process, include the following steps: that (1) carries out cleaning pretreatment to monocrystalline silicon substrate, (2) monocrystalline silicon substrate is placed on PECVD device radio frequency cathode plate, and vacuum chamber vacuum is evacuated to greater than 3 × 10‑3Pa heats optical element to 450 DEG C；(3) it is filled with argon gas to vacuum chamber, keeps vacuum in 2.5Pa, while radio frequency source electric discharge will form argon ion, argon ion alignment substrate surface bombardment 8min after argon gas ion；(4) it is passed through butane into vacuum chamber, keeps vacuum in 300Pa, adjusts radio-frequency power in 2500W or more, then reduces radio-frequency power and continues to deposit until deposition thickness is preset value to 800W；(5) workpiece temperature is slowly dropped to room temperature, rate of temperature fall is 50 DEG C/h；Diamond-like film hardness made from technique of the invention is high, is delineated with any sharp metal product without trace, and wearability is good.
Description
Technical field
The present invention relates to coating process technical fields, and in particular to a kind of forming diamond-like carbon film on surface of infrared optical element
Coating process.
Background technique
The research for carrying out diamond-like (Diamond-Like Carbon, DLC) film both at home and abroad started from for 20th century 70 years
Generation, early period are mainly the research of manufacturing method, study manufacturing device and the DLC film structure feature using device production.
The main object of Recent study is the remodeling and technical study of manufacturing equipment.DLC film cannot be widely applied at present
Main problem include: that manufacturing equipment technical research is inadequate, it is difficult to large area deposition DLC film, film fabrication techniques study not
It is enough, cause thin film fabrication repeatability bad, thin film stability and residual stress problems do not solve fundamentally.According to optically thin
Known to the basic theories of film: DLC film works near infrared region, and film thickness has to be larger than 400nm, does in 8-12um red
When outer anti-reflection protective film, it is desirable that film thickness is usually in 1250nm or so, therefore membrane stress becomes influence adhesive force
Principal element.DLC film is grown using different methods, membrane stress is different.DLC film is deposited using vacuum cathode arc
Stress be about 4-14GPa, the stress of the DLC film of plasma enhanced chemical vapor deposition is about 0.18-4.7GPa,
Use the stress of the low-priced carbon film for penetrating growth of unbalanced magnetron for 1.5-2.5GPa.When growing DLC film with same process, substrate material
Material is different, and film thickness is different, film making process is different, and membrane stress is also different
Summary of the invention
The invention provides the following technical scheme: a kind of forming diamond-like carbon film on surface of infrared optical element coating process, packet
It includes: including the following steps: that (1) carries out cleaning pretreatment to monocrystalline silicon substrate；(2) monocrystalline silicon substrate is placed into PECVD device
On radio frequency cathode plate, and vacuum chamber vacuum is evacuated to greater than 3 × 10-3Pa heats optical element to 300 DEG C -550 DEG C；(3) to
Vacuum chamber is filled with argon gas, keeps vacuum in 2.5Pa, while radio frequency source electric discharge will form argon ion, argon ion after argon gas ion
Alignment substrate surface bombardment 5-10min；(4) it is passed through butane into vacuum chamber, keeps vacuum in 5-600Pa, adjusts radio-frequency power
In 2500W or more, 2-5min is deposited, then reduction radio-frequency power to 60-1300W continues deposition until deposition thickness is default
Value；(5) workpiece temperature is slowly dropped to room temperature, rate of temperature fall is 40-60 DEG C/h.
Further, cleaning pretreatment specifically: place the substrates in ultrasonic cleaning 10min in alcohol, then spend from
It is dried up after sub- water repeated flushing.
Further, for substrate from radio frequency source 190mm, the flow that butane is filled with is 50sccm.
Further, include the following steps: that (1) carries out cleaning pretreatment to monocrystalline silicon substrate；(2) monocrystalline silicon substrate is placed
It is evacuated to onto PECVD device radio frequency cathode plate, and by vacuum chamber vacuum greater than 3 × 10-3Pa heats optical element to 450 DEG C；
(3) it is filled with argon gas to vacuum chamber, keeps vacuum in 2.5Pa, while radio frequency source electric discharge will form argon ion, argon after argon gas ion
Ion is directed at substrate surface and bombards 8min；(4) it is passed through butane into vacuum chamber, keeps vacuum in 300Pa, adjusts radio-frequency power and exist
2500W or more deposits 5min, then reduces radio-frequency power and continues to deposit until deposition thickness is preset value to 800W；(5) by work
Part temperature is slowly dropped to room temperature, and rate of temperature fall is 50 DEG C/h.
The beneficial effects of the present invention are: diamond-like film hardness made from technique of the invention is high, with any sharp gold
Metal products are delineated without trace, and wearability is good.
Specific embodiment
A specific embodiment of the invention is described in detail below:
Embodiment 1:
The present invention provides a kind of forming diamond-like carbon film on surface of infrared optical element coating process, includes the following steps: (1)
Cleaning pretreatment, cleaning pretreatment specifically: place the substrates in ultrasonic cleaning in alcohol are carried out to monocrystalline silicon substrate
10min, then with being dried up after deionized water repeated flushing；(2) monocrystalline silicon substrate is placed into PECVD device radio frequency cathode plate
On, and vacuum chamber vacuum is evacuated to greater than 3 × 10-3Pa heats optical element to 300 DEG C -550 DEG C；Substrate is from radio frequency source
190mm, the flow that butane is filled with are 50sccm；(3) it is filled with argon gas to vacuum chamber, keeps vacuum in 2.5Pa, while radio frequency source is put
Electricity will form argon ion, argon ion alignment substrate surface bombardment 5-10min after argon gas ion；(4) fourth is passed through into vacuum chamber
Alkane keeps vacuum in 5-600Pa, adjusts radio-frequency power in 2500W or more, deposit 2-5min, then reduce radio-frequency power to 60-
1300W continues deposition until deposition thickness is preset value；(5) workpiece temperature is slowly dropped to room temperature, rate of temperature fall 40-60
℃/h。
Embodiment 2:
A kind of forming diamond-like carbon film on surface of infrared optical element coating process includes the following steps: (1) to monocrystalline silicon substrate
Piece carries out cleaning pretreatment, cleaning pretreatment specifically: place the substrates in ultrasonic cleaning 10min in alcohol, then spend
It is dried up after ionized water repeated flushing；(2) monocrystalline silicon substrate is placed on PECVD device radio frequency cathode plate, and by vacuum chamber
Vacuum is evacuated to greater than 3 × 10-3Pa heats optical element to 450 DEG C；From radio frequency source 190mm, the flow that butane is filled with is substrate
50sccm；(3) it is filled with argon gas to vacuum chamber, keeps vacuum in 2.5Pa, while radio frequency source electric discharge will form argon after argon gas ion
Ion, argon ion alignment substrate surface bombardment 8min；(4) it is passed through butane into vacuum chamber, keeps vacuum in 300Pa, adjusting is penetrated
Frequency power deposits 5min in 2500W or more, and then reduction radio-frequency power to 800W continues deposition until deposition thickness is default
Value；(5) workpiece temperature is slowly dropped to room temperature, rate of temperature fall is 50 DEG C/h.
Diamond-like film hardness made from technique of the invention is high, with any sharp metal product delineation without trace,
And wearability is good.
The present invention is not limited to examples detailed above, in claims of the present invention limited range, art technology
The various deformations or amendments that personnel can make without creative work are protected by this patent.
Claims (4)
1. a kind of forming diamond-like carbon film on surface of infrared optical element coating process, which comprises the steps of: (1)
Cleaning pretreatment is carried out to monocrystalline silicon substrate；(2) monocrystalline silicon substrate is placed on PECVD device radio frequency cathode plate, and will
Vacuum chamber vacuum is evacuated to greater than 3 × 10-3Pa heats optical element to 300 DEG C -550 DEG C；(3) it is filled with argon gas to vacuum chamber, kept
Vacuum is in 2.5Pa, while radio frequency source electric discharge will form argon ion, argon ion alignment substrate surface bombardment 5- after argon gas ion
10min；(4) it is passed through butane into vacuum chamber, keeps vacuum in 5-600Pa, adjusts radio-frequency power in 2500W or more, deposit 2-
Then 5min reduces radio-frequency power and continues to deposit until deposition thickness is preset value to 60-1300W；(5) workpiece temperature is slow
It is down to room temperature, rate of temperature fall is 40-60 DEG C/h.
2. a kind of forming diamond-like carbon film on surface of infrared optical element coating process according to claim 1, feature exist
In the cleaning pretreatment specifically: place the substrates in ultrasonic cleaning 10min in alcohol, then repeatedly with deionized water
It is dried up after flushing.
3. a kind of forming diamond-like carbon film on surface of infrared optical element coating process according to claim 1, feature exist
In for the substrate from radio frequency source 190mm, the flow that butane is filled with is 50sccm.
4. a kind of forming diamond-like carbon film on surface of infrared optical element coating process according to claim 1, feature exist
In including the following steps: that (1) carries out cleaning pretreatment to monocrystalline silicon substrate；(2) monocrystalline silicon substrate is placed into PECVD device
On radio frequency cathode plate, and vacuum chamber vacuum is evacuated to greater than 3 × 10-3Pa heats optical element to 450 DEG C；(3) to vacuum chamber
It is filled with argon gas, keeps vacuum in 2.5Pa, while radio frequency source electric discharge will form argon ion after argon gas ion, argon ion is directed at base
Piece surface bombardment 8min；(4) it is passed through butane into vacuum chamber, keeps vacuum in 300Pa, adjust radio-frequency power in 2500W or more,
5min is deposited, radio-frequency power is then reduced and continues to deposit until deposition thickness is preset value to 800W；(5) workpiece temperature is slow
It is down to room temperature, rate of temperature fall is 50 DEG C/h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711201138.8A CN109837522A (en) | 2017-11-27 | 2017-11-27 | A kind of forming diamond-like carbon film on surface of infrared optical element coating process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711201138.8A CN109837522A (en) | 2017-11-27 | 2017-11-27 | A kind of forming diamond-like carbon film on surface of infrared optical element coating process |
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| Publication Number | Publication Date |
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| CN109837522A true CN109837522A (en) | 2019-06-04 |
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| CN201711201138.8A Withdrawn CN109837522A (en) | 2017-11-27 | 2017-11-27 | A kind of forming diamond-like carbon film on surface of infrared optical element coating process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110565067A (en) * | 2019-09-25 | 2019-12-13 | 郑州华晶新能源科技有限公司 | Metallized diamond nano composite plating film and preparation method thereof |
-
2017
- 2017-11-27 CN CN201711201138.8A patent/CN109837522A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110565067A (en) * | 2019-09-25 | 2019-12-13 | 郑州华晶新能源科技有限公司 | Metallized diamond nano composite plating film and preparation method thereof |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20190604 |
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| WW01 | Invention patent application withdrawn after publication |