CN114807886B - Process chamber and process method - Google Patents
Process chamber and process method Download PDFInfo
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- CN114807886B CN114807886B CN202210389035.3A CN202210389035A CN114807886B CN 114807886 B CN114807886 B CN 114807886B CN 202210389035 A CN202210389035 A CN 202210389035A CN 114807886 B CN114807886 B CN 114807886B
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- 238000000034 method Methods 0.000 title claims abstract description 199
- 238000010438 heat treatment Methods 0.000 claims abstract description 88
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 238000012546 transfer Methods 0.000 claims description 9
- 238000012360 testing method Methods 0.000 claims description 8
- 238000009529 body temperature measurement Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- 239000013049 sediment Substances 0.000 abstract description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The invention provides a process chamber and a process method, wherein the process chamber comprises a chamber body, a lining, a temperature control part and a control part, wherein the lining is annular and is arranged along the circumferential direction of the inner circumferential wall of the chamber body and used for shielding the inner circumferential wall of the chamber body; the temperature control component is arranged on the lining and used for detecting the temperature of the lining and heating the lining; the control piece is electrically connected with the temperature control component and is used for controlling the temperature control component to heat the lining when the real-time temperature of the lining does not reach the stable temperature according to the stable temperature and the real-time temperature of the lining in the semiconductor process detected by the temperature control component so as to control the temperature of the lining. The process chamber and the process method provided by the invention can reduce the temperature difference of the lining when the process is performed and the process is not performed, and reduce the peeling of sediments, thereby improving the process stability and the process result.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a process chamber and a process method.
Background
In some semiconductor processes, it is desirable to deposit a titanium nitride (TiN) film as an adhesion layer on a wafer using a physical vapor deposition (Physical Vapor Deposition, abbreviated PVD) process. In the existing process of depositing a titanium nitride film by adopting a physical vapor deposition process, a wafer is placed on an electrostatic chuck in a process chamber, process gas is introduced into the chamber, and plasma can be formed in the chamber by the process gas to bombard a titanium target at the top of the chamber, so that target atoms are continuously deposited on the wafer, and the titanium nitride film is formed on the wafer. In the process, in order to avoid the deposition of target atoms on the inner peripheral wall of the cavity, an annular lining (Shield) is arranged in the cavity, and the lining is arranged along the circumferential direction of the inner peripheral wall of the cavity to Shield the inner peripheral wall of the cavity so as to prevent the deposition of target atoms on the inner peripheral wall of the cavity.
However, since the target atoms are deposited on the liner and the stress of the titanium nitride film is high, and a great amount of heat is generated by the plasma bombarding the target material, the liner has a large temperature difference (greater than 50 ℃) during the process and when the process is not performed, so that the titanium nitride film on the liner is easy to peel off (Peeling) from the liner to form particles, if the particles formed by the peeled titanium nitride film are adhered to the back surface of the wafer (the surface of the wafer facing the electrostatic chuck), the electrostatic chuck has insufficient electrostatic adsorption force on the wafer during the subsequent process, the wafer is offset and even the wafer fails to transfer, fragments are caused, and if the particles formed by the peeled titanium nitride film are adhered to the front surface of the wafer, the subsequent film growth, lithography (Litho) and etching (Etch) are affected, so that the process stability is poor, and the process result is poor.
Disclosure of Invention
The invention aims at solving at least one of the technical problems in the prior art, and provides a process chamber and a process method, which can reduce the temperature difference of a lining when the process is performed and is not performed, and reduce the peeling of sediments, so that the process stability and the process result can be improved.
The invention provides a process chamber for achieving the purpose, which comprises a chamber body, a lining, a temperature control component and a control piece, wherein the lining is annular and is arranged along the circumferential direction of the inner circumferential wall of the chamber body and used for shielding the inner circumferential wall of the chamber body;
The temperature control component is arranged on the lining and used for detecting the temperature of the lining and heating the lining;
The control piece is electrically connected with the temperature control component and is used for controlling the temperature control component to heat the lining when the real-time temperature of the lining does not reach the stable temperature according to the stable temperature and the real-time temperature of the lining in the semiconductor process detected by the temperature control component so as to control the temperature of the lining.
Optionally, the temperature control component comprises a temperature measuring piece and a heating piece, and the temperature measuring piece is arranged on the lining and is used for detecting the temperature of the lining;
The heating piece is arranged on the lining and is used for heating the lining;
the control piece is respectively and electrically connected with the temperature measuring piece and the heating piece, and is used for controlling the heating power of the heating piece according to the stable temperature and the real-time temperature detected by the temperature measuring piece, so that the heating piece can be controlled to heat the lining when the real-time temperature of the lining does not reach the stable temperature.
Optionally, the heating element is annular and is disposed inside the liner along a circumferential direction of the liner.
Optionally, the number of the heating elements is a plurality, and the plurality of the heating elements are distributed at intervals in the axial direction of the lining.
Optionally, the temperature measuring parts are arranged in the lining, and the number of the temperature measuring parts is the same as that of the heating parts and the temperature measuring parts are arranged in a one-to-one correspondence manner.
Optionally, each temperature measuring piece is located above the corresponding heating piece and is spaced from the corresponding heating piece.
Optionally, the temperature control component further comprises an electric connecting piece, the electric connecting piece penetrates through the inside of the lining and is respectively and electrically connected with the temperature measuring piece and the heating piece, and the control piece is respectively and electrically connected with the temperature measuring piece and the heating piece through the electric connecting piece.
Optionally, the process chamber further comprises a connector and a plug, the connector is sleeved at one end of the electric connecting piece electrically connected with the control piece, and the plug is detachably connected with the connector.
Optionally, the process chamber further comprises a switching part, a protruding connecting part is arranged on the peripheral wall of the liner, the switching part is annular and arranged on the cavity, the connecting part is annular and arranged on the switching part, and a channel for the joint to pass through is formed in the switching part.
The invention also provides a process method, which adopts the process chamber provided by the invention and comprises the following steps:
The semiconductor process with the preset times is carried out by adopting a test wafer, and when the semiconductor process reaches a stable state, the stable temperature of the lining is detected;
heating the temperature of the liner to the stabilizing temperature prior to performing the semiconductor process;
the real-time temperature of the liner is detected while the semiconductor process is performed, and the liner is heated when the real-time temperature of the liner does not reach the stable temperature.
The invention has the following beneficial effects:
According to the process chamber provided by the invention, the temperature control component is arranged on the lining, the control piece is arranged to be electrically connected with the temperature control component, the temperature of the lining can be detected by the temperature control component, the temperature control component is controlled to heat the lining when the real-time temperature of the lining does not reach the stable temperature according to the stable temperature and the real-time temperature of the lining in the semiconductor process detected by the temperature control component by the control piece, so that the temperature of the lining can be controlled, the temperature difference of the lining during process and the process not performed can be reduced, the peeling of sediment is reduced, and further the process stability and the process result can be improved.
According to the process method provided by the invention, the semiconductor process is carried out for preset times by adopting the test wafer under the same process condition, and the stable temperature of the lining is detected when the semiconductor process reaches a stable state; the temperature of the lining can be heated to a stable temperature before the semiconductor process is performed, the real-time temperature of the lining can be detected when the semiconductor process is performed, and the lining is heated when the real-time temperature of the lining does not reach the stable temperature, so that the temperature difference of the lining during the process and the process is not performed can be reduced, the peeling of sediments is reduced, and the process stability and the process result can be improved.
Drawings
FIG. 1 is a schematic view of a process chamber according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a liner of a process chamber according to an embodiment of the present invention;
FIG. 3 is a schematic view of a partially cut-away configuration of one side of a liner of a process chamber provided in accordance with an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of another side of a liner of a process chamber provided in accordance with an embodiment of the present invention;
FIG. 5 is a flow chart of a process provided by an embodiment of the present invention;
FIG. 6 is a schematic diagram showing the variation of the liner temperature during the semiconductor process using the process chamber and the process method according to the embodiments of the present invention;
Reference numerals illustrate:
1-a cavity; 2-lining; 21-fitting channel; 22-connecting part; 23-lap; 31-a temperature measuring piece; 32-heating element; 33-a control; 4-linker; 5-an adapter component; 6-insulating parts; 7-a cover ring; 81-top cover; 82-target material; 83-magnetron; 84-a rotary drive; 85-a carrier; 86-heating lamp; 87-an air extraction component; 88-deionized water; 9-wafer.
Detailed Description
In order to enable those skilled in the art to better understand the technical scheme of the present invention, the process chamber and the process method provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 4, the embodiment of the present invention provides a process chamber, which includes a chamber body 1, a liner 2, a temperature control component and a control member 33, wherein the liner 2 is annular and is disposed along a circumferential direction of an inner circumferential wall of the chamber body 1, and is used for shielding the inner circumferential wall of the chamber body 1; the temperature control component is arranged on the lining 2 and is used for detecting the temperature of the lining 2 and heating the lining 2; the control member 33 is electrically connected to the temperature control member for controlling the temperature control member to heat the liner 2 when the real-time temperature of the liner 2 does not reach the stable temperature according to the detected stable temperature and real-time temperature of the liner 2 in the semiconductor process, so as to control the temperature of the liner 2.
According to the process chamber provided by the embodiment of the invention, the temperature control component is arranged on the liner 2, the control piece 33 is arranged and is electrically connected with the temperature control component, the temperature of the liner 2 can be detected by the temperature control component, the control piece 33 can be used for controlling the temperature control component to heat the liner 2 when the real-time temperature of the liner 2 does not reach the stable temperature according to the stable temperature and the real-time temperature of the liner 2 in the semiconductor process detected by the temperature control component, so that the temperature of the liner 2 can be controlled, the temperature difference of the liner 2 in the process and the process which is not performed can be reduced, the peeling of sediment is reduced, and the process stability and the process result can be improved.
That is, the whole process of the semiconductor process may include a pre-process stage, a process stabilization stage, and a post-process stage, wherein the temperature of the liner 2 is in a low state in the pre-process stage, and the temperature of the liner 2 is gradually increased due to the process after the start of the process, and is increased to a stable temperature in the process stabilization stage, and the temperature of the liner 2 is gradually decreased in the post-process stage, which results in a large temperature difference between the process in the middle of the process and the process in the absence of the process, so that the deposits deposited on the liner 2 are easily peeled off. In the embodiment of the invention, the temperature control component is arranged on the liner 2, the control piece 33 is electrically connected with the temperature control component, the temperature of the liner 2 is detected by the temperature control component, and the temperature control component is controlled to heat the liner 2 when the real-time temperature of the liner 2 does not reach the stable temperature according to the stable temperature and the real-time temperature of the liner 2 detected by the temperature control component in the semiconductor process, so that when the semiconductor process is in a stage before the process starts and a stage after the process ends, the real-time temperature of the liner 2 is detected to be lower than the stable temperature by the temperature control component, or the real-time temperature of the liner 2 is reduced by the stable temperature, the control piece 33 can control the temperature control component to heat the liner 2, so that the temperature of the liner 2 is increased to reach the stable temperature, the temperature difference of the liner 2 in the process and the process not performed can be reduced, the peeling of sediments can be reduced, and the process stability and the process result can be improved.
Taking a physical vapor deposition process for depositing a titanium nitride film on a wafer 9 as an example, in the stage before the process starts, the wafer 9 needs to be placed into the cavity 1, in the process, the temperature of the liner 2 is not yet started, therefore, the temperature of the liner 2 is in a lower state, after the process starts, process gas starts to be introduced into the cavity 1, the process gas forms plasma in the cavity 1 and starts to bombard the titanium target 82 on the top of the cavity 1, target atoms start to be deposited on the wafer 9, in the process, the target atoms also deposit on the liner 2, and the heat generated by the plasma bombarding the target 82 can gradually increase the temperature of the liner 2, in the process stable stage, the plasma continuously bombards the target 82, the target atoms deposit on the wafer 9, so that the temperature of the liner 2 is stable, and the target atoms also continuously deposit on the liner 2, when the temperature difference between the liner 2 is met after the process is stopped, the liner 2 is not reached, and the temperature of the liner 2 is gradually reduced, and the liner 2 is not subjected to the process is gradually deposited after the process is stopped, so that the temperature difference of the liner 2 is gradually reduced, and the liner 2 is not subjected to the process is easily caused. In the embodiment of the invention, the temperature control component is arranged on the liner 2, the control piece 33 is electrically connected with the temperature control component, the temperature of the liner 2 is detected by the temperature control component, the temperature control component is controlled to heat the liner 2 when the real-time temperature of the liner 2 does not reach the stable temperature according to the stable temperature and the real-time temperature of the liner 2 detected by the temperature control component in the semiconductor process, and thus when the semiconductor process is in a stage before the process starts and a stage after the process ends, the temperature control component detects that the real-time temperature of the liner 2 is lower than the stable temperature, or the real-time temperature of the liner 2 is reduced from the stable temperature, the control piece 33 can control the temperature control component to heat the liner 2, so that the temperature of the liner 2 is increased to reach the stable temperature, the temperature difference of the liner 2 in the process and the process not performed can be reduced, the peeling of the titanium nitride film deposited on the liner 2 can be reduced, and the process stability and the process result can be improved.
As shown in fig. 1 to 4, in a preferred embodiment of the present invention, the temperature control part may include a temperature measuring part 31 and a heating part 32, and the temperature measuring part 31 is disposed on the liner 2 for detecting the temperature of the liner 2; a heating member 32 is provided on the liner 2 for heating the liner 2; the control member 33 is electrically connected with the temperature measuring member 31 and the heating member 32, and is used for controlling the heating power of the heating member 32 according to the stable temperature and the real-time temperature detected by the temperature measuring member 31, so as to control the heating member 32 to heat the liner 2 when the real-time temperature of the liner 2 does not reach the stable temperature.
That is, the temperature measuring member 31 is disposed on the liner 2, and can detect the temperature of the liner 2 to be able to detect the stable temperature and the real-time temperature of the liner 2, the temperature measuring member 31 is electrically connected with the control member 33, the temperature measuring member 31 can feed back the detected temperature to the control member 33, the control member 33 can receive the temperature of the liner 2 detected by the temperature measuring member 31, the control member 33 is electrically connected with the heating member 32, the heating power of the heating member 32 can be controlled according to the stable temperature and the real-time temperature detected by the temperature measuring member 31, the heating member 32 is disposed on the liner 2, and the liner 2 can be heated according to the control of the control member 33, so that the liner 2 can be heated when the real-time temperature of the liner 2 does not reach the stable temperature.
As shown in fig. 1 to 4, in a preferred embodiment of the present invention, the heating member 32 may be annular and disposed inside the liner 2 in the circumferential direction of the liner 2. In this way, the liner 2 can be heated from the circumferential direction of the liner 2, and the liner 2 can be heated from the inside of the liner 2, so that the uniformity and efficiency of heating the liner 2 can be improved, and the heating element 32 can be prevented from being polluted by, for example, plasma in the cavity 1, and the service life and stability of the heating element 32 can be improved.
Alternatively, the heating member 32 may include a heating wire.
As shown in fig. 3 and 4, in a preferred embodiment of the present invention, the inner liner 2 may be provided with a fitting channel 21 in the circumferential direction, and the heating element 32 may be fitted in the fitting channel 21, thereby realizing that the heating element 32 is disposed inside the inner liner 2.
As shown in fig. 1 to 4, in a preferred embodiment of the present invention, the number of heating elements 32 may be plural, and the plural heating elements 32 may be spaced apart in the axial direction of the liner 2. In this way, the liner 2 can be heated from different positions in the axial direction of the liner 2, so that uniformity and efficiency of heating the liner 2 can be improved.
As shown in fig. 1-4, the number of heating elements 32 may alternatively be two.
As shown in fig. 3 and 4, alternatively, a plurality of heating elements 32 may be each fitted in the fitting passage 21, so that the plurality of heating elements 32 can each be disposed inside the liner 2.
As shown in fig. 1 and 4, in a preferred embodiment of the present invention, temperature measuring members 31 may be disposed inside the liner 2, and the number of temperature measuring members 31 may be the same as that of heating members 32 and disposed in one-to-one correspondence. The temperature of the liner 2 can be detected from the inside of the liner 2, so that the accuracy of the temperature detection of the liner 2 can be improved, the temperature measuring piece 31 can be prevented from being polluted by plasma in the cavity 1, and the service life and stability of the temperature measuring piece 31 can be improved. Taking the number of heating elements 32 as two as an example, the number of temperature measuring elements 31 may be two, one temperature measuring element 31 of the two temperature measuring elements 31 is arranged corresponding to one heating element 32 of the two heating elements 32, and the other temperature measuring element 31 is arranged corresponding to the other heating element 32 of the two heating elements 32.
Alternatively, the temperature measuring member 31 may include a thermocouple.
As shown in fig. 1 and 4, in a preferred embodiment of the present invention, each temperature measuring member 31 is located above a corresponding heating member 32 and is spaced apart from the corresponding heating member 32.
In this way, the temperature measuring members 31 can detect the temperature reached by the heating of the corresponding heating members 32 received by the liner 2, so that the accuracy of detecting the temperature of the liner 2 can be improved.
Alternatively, the distance between the temperature measuring member 31 and the corresponding heating member 32 may be 3cm to 4cm.
In a preferred embodiment of the present invention, the temperature control member may further include an electrical connector penetrating inside the liner 2 and electrically connected to the temperature measuring member 31 and the heating member 32, respectively, and the control member 33 is electrically connected to the temperature measuring member 31 and the heating member 32, respectively, through the electrical connector.
That is, the electrical connection members are provided to penetrate the inside of the liner 2, and the electrical connection members may be electrically connected with the temperature measuring member 31 and the control member 33, respectively, so that the control member 33 can be electrically connected with the temperature measuring member 31 through the electrical connection members, and the electrical connection members may be electrically connected with the heating member 32 and the control member 33, respectively, so that the control member 33 can be electrically connected with the heating member 32 through the electrical connection members.
Alternatively, the electrical connection member may include a first positive connection member, a first negative connection member, a second positive connection member, and a second negative connection member, where the first positive connection member is electrically connected to the positive electrode of the temperature measurement member 31 and the control member 33, the first negative connection member is electrically connected to the negative electrode of the temperature measurement member 31 and the control member 33, the second positive connection member is electrically connected to the positive electrode of the heating member 32 and the control member 33, and the second negative connection member is electrically connected to the negative electrode of the heating member 32 and the control member 33, so that the control member 33 is electrically connected to the temperature measurement member 31 through the first positive connection member and the first negative connection member, and is electrically connected to the heating member 32 through the second positive connection member and the second negative connection member.
Alternatively, the first positive electrode connection member, the first negative electrode connection member, the second positive electrode connection member, and the second negative electrode connection member may each include a wire.
In a preferred embodiment of the invention, as shown in fig. 3, the process chamber may further comprise a connector 4 and a plug, wherein the connector 4 may be connected to the liner 2, sleeved on one end of the electrical connector electrically connected to the control member 33, and detachably connected to the temperature control member, and the plug is detachably connected to the connector 4.
The design is that the lining 2 needs to be disassembled and cleaned regularly, when the lining 2 is cleaned, the control piece 33 needs to be disassembled from the joint 4 so as to avoid damage to the control piece 33 caused by cleaning, and the plug needs to be connected with the joint 4 so as to avoid damage to the temperature measuring piece 31, the heating piece 32 and the electric connection circuit caused by cleaning, and when the lining 2 is assembled after being cleaned, the plug is disassembled from the joint 4, and the control piece 33 is connected with the joint 4 so as to realize electric connection of the control piece 33 and the electric connection piece.
Alternatively, the joint 4 may be provided with a connecting thread, and the plug may be provided with a mating thread that mates with the connecting thread. In this way, the plug and the joint 4 can be connected through threads, so that detachable connection is realized.
As shown in fig. 1, optionally, a control member 33 may be provided outside the cavity 1. This prevents the control member 33 from being contaminated by, for example, plasma in the chamber 1, and improves the service life and stability of the control member 33.
As shown in fig. 3, alternatively, the number of the connectors 4 may be two, one connector 4 of the two connectors 4 may be disposed at one end of the first positive electrode connector and one end of the second positive electrode connector, the other connector 4 may be disposed at one end of the first negative electrode connector and one end of the second negative electrode connector, the number of the plugs may be two, and the two plugs are detachably connected in one-to-one correspondence with the two connectors 4.
As shown in fig. 1 and 2, in a preferred embodiment of the present invention, the process chamber may further include a transfer member 5 and an insulating member 6, wherein a protruding connection portion 22 is provided on the outer circumferential wall of the liner 2, the transfer member 5 is ring-shaped and is configured to be disposed on the chamber body 1, the connection portion 22 is ring-shaped and is disposed on the transfer member 5, the insulating member 6 is disposed on the connection portion 22, and the transfer member 5 is provided with a channel through which the connector 4 passes.
That is, the connection portion 22 is sandwiched between the adapting member 5 and the insulating member 6, the adapting member 5 is disposed on the cavity 1, so as to support the liner 2, in practical application, the target 82 may be disposed on the insulating member 6, and the insulating member 6 may insulate between the target 82 and the liner 2. The connector 4 may be mounted in a channel provided in the adapter member 5.
Alternatively, the insulating member 6 may comprise a ceramic ring.
As shown in fig. 1 and 2, the process chamber may optionally further include a Cover Ring 7 (Cover Ring), the bottom of the liner 2 may be provided with a lap joint 23, and the Cover Ring 7 may lap over the lap joint 23. In practical applications, the cover ring 7 may shield the edge of the carrier 85 carrying the wafer 9 in the chamber 1, and may shield the gap between the carrier 85 and the liner 2, so as to avoid deposition on the edge of the carrier 85 in the semiconductor process, and on the inner wall of the chamber 1 below the carrier 85 through the gap between the carrier 85 and the liner 2.
As shown in fig. 1, optionally, the process chamber may further include a top cover 81, a target 82, a magnetron 83, a rotation driving member 84, a carrying member 85, a heating lamp 86 and an exhausting member 87, wherein the target 82 is disposed on the insulating member 6, the top cover 81 is covered on the insulating member 6 and covers the target 82 therein, deionized water 88 is filled between the target 82 and the top cover 81, the magnetron 83 is disposed between the target 82 and the top cover 81 and is used for generating a magnetic field to excite process gas in the chamber 1 to form plasma, the rotation driving member 84 is disposed outside the top cover 81 and is connected with the magnetron 83 and is used for driving the magnetron 83 to rotate, the carrying member 85 is disposed in the chamber 1 and is used for carrying the wafer 9, the heating lamp 86 is disposed in the chamber 1 and is used for heating the chamber, and the exhausting member 87 is disposed at the bottom of the chamber 1.
Alternatively, the carrier 85 may comprise an electrostatic chuck.
Alternatively, the pumping means 87 may comprise a cold pump.
Alternatively, the rotary drive 84 may comprise a motor.
As shown in fig. 5, the embodiment of the invention further provides a process method, which adopts the process chamber provided by the embodiment of the invention, and comprises the following steps:
S1, performing a semiconductor process for preset times by adopting a test wafer, and detecting the stable temperature of the liner 2 when the semiconductor process reaches a stable state;
s2, heating the temperature of the liner 2 to a stable temperature before performing a semiconductor process;
S3, detecting the real-time temperature of the lining 2 when the semiconductor process is performed, and heating the lining 2 when the real-time temperature of the lining 2 does not reach the stable temperature.
According to the technical method provided by the embodiment of the invention, under the same technical conditions (the same technical conditions as the regular semiconductor process is carried out), the semiconductor process is carried out for the preset times by adopting the test wafer, and when the semiconductor process reaches a stable state, the stable temperature of the liner 2 is detected; the temperature of the liner 2 can be heated to a stable temperature before the semiconductor process is performed, the real-time temperature of the liner 2 can be detected when the semiconductor process is performed, and the liner 2 can be heated when the real-time temperature of the liner 2 does not reach the stable temperature, so that the temperature difference of the liner 2 during the process and the process is not performed can be reduced, the peeling of sediments is reduced, and the process stability and the process result can be improved.
Taking the example of depositing the titanium nitride film on the Wafer 9 by using the physical vapor deposition process as an example, process conditions such as process power, deposition time, deposition thickness or process gas (for example, the ratio of argon (Ar) to nitrogen (N 2)) can be set, under the set process conditions, a semiconductor process with a preset number of times of 50 can be performed by using a test Wafer (for example, a Dummy Wafer), and when the semiconductor process reaches a steady state, the steady temperature of the liner 2 at this time is detected by the temperature control component, then the control component 33 can set the heating temperature of the temperature control component according to the steady temperature of the liner 2 in the semiconductor process detected by the temperature control component, so that before the semiconductor process is performed, the temperature control component can control the temperature of the liner 2 to the steady temperature, while the semiconductor process is performed, the real-time temperature of the liner 2 can be detected by the temperature control component, the control component 33 can control the real-time temperature of the liner 2 according to the real-time temperature of the liner 2, and when the real-time temperature of the liner 2 does not reach the steady temperature, the temperature of the liner 2 is not controlled by the temperature control component, and the process is not peeled off, thereby the process stability can be reduced, and the process stability can be improved.
Taking a semiconductor process as an example of depositing a titanium nitride film on the wafer 9 by a physical vapor deposition process, when the process power of the set process conditions is 11kw and the thickness of the deposited titanium nitride film isWhen the semiconductor process is performed 50 times by using the test wafer, the temperature of the liner 2 detected by the temperature control component is 110 ℃ when the semiconductor process reaches a stable state, so that before the semiconductor process is performed, the control component 33 can control the temperature of the liner 2 to be heated to 110 ℃, and when the semiconductor process is performed, the temperature control component can detect the real-time temperature of the liner 2, and the control component 33 can control the temperature control component to heat the liner 2 when the real-time temperature of the liner 2 does not reach 110 ℃ according to the real-time temperature of the liner 2, thereby reducing the temperature difference of the liner 2 to about 15 ℃ when the process is performed and when the process is not performed (as shown in fig. 6, the ordinate is the temperature (unit ℃), and the abscissa is the time (unit is s)) in fig. 6).
In summary, the process chamber and the process method provided by the embodiments of the present invention can reduce the temperature difference of the liner 2 during the process and when the process is not performed, and reduce the flaking of the sediment, so as to improve the process stability and the process result.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (8)
1. The process chamber is characterized by comprising a chamber body, a lining, a temperature control component and a control piece, wherein the lining is annular and is arranged along the circumferential direction of the inner circumferential wall of the chamber body and used for shielding the inner circumferential wall of the chamber body;
The temperature control component is arranged on the lining and used for detecting the temperature of the lining and heating the lining;
The control piece is electrically connected with the temperature control component and is used for controlling the temperature control component to heat the lining when the real-time temperature of the lining does not reach the stable temperature according to the stable temperature and the real-time temperature of the lining in the semiconductor process detected by the temperature control component so as to control the temperature of the lining;
The temperature control component comprises a temperature measuring piece and a heating piece, wherein the temperature measuring piece is arranged on the lining and is used for detecting the temperature of the lining;
The heating piece is arranged on the lining and is used for heating the lining;
The control piece is respectively and electrically connected with the temperature measuring piece and the heating piece and is used for controlling the heating power of the heating piece according to the stable temperature and the real-time temperature detected by the temperature measuring piece so as to control the heating piece to heat the lining when the real-time temperature of the lining does not reach the stable temperature; the stable temperature is obtained by detecting the lining when the semiconductor process reaches a stable state by adopting a test wafer for the semiconductor process with preset times;
The heating piece is annular and is arranged inside the lining along the circumferential direction of the lining;
and an assembly channel is formed in the circumferential direction of the lining, and the heating element is assembled in the assembly channel.
2. The process chamber of claim 1, wherein the number of heating elements is a plurality, the plurality of heating elements being spaced apart in the axial direction of the liner.
3. The process chamber of claim 2, wherein the temperature measurement members are disposed inside the liner, and the number of temperature measurement members is the same as the number of heating members and is disposed in a one-to-one correspondence.
4. A process chamber according to claim 3, wherein each of the temperature sensing members is located above and spaced apart from the corresponding heating member.
5. The process chamber of claim 1, wherein the temperature control component further comprises an electrical connector disposed through the interior of the liner and electrically connected to the temperature measurement component and the heating component, respectively, and wherein the control component is electrically connected to the temperature measurement component and the heating component, respectively, via the electrical connector.
6. The process chamber of claim 5, further comprising a connector and a plug, the connector being positioned at an end of the electrical connection member that is electrically connected to the control member, the plug being removably connected to the connector.
7. The process chamber of claim 6, further comprising a transfer member having a protruding connection portion disposed on an outer peripheral wall of the liner, the transfer member being annular and disposed on the cavity, the connection portion being annular and disposed on the transfer member, the transfer member defining a channel through which the connector passes.
8. A process, characterized in that a process chamber according to any of claims 1-7 is used, comprising the steps of:
The semiconductor process with the preset times is carried out by adopting a test wafer, and when the semiconductor process reaches a stable state, the stable temperature of the lining is detected;
heating the temperature of the liner to the stabilizing temperature prior to performing the semiconductor process;
the real-time temperature of the liner is detected while the semiconductor process is performed, and the liner is heated when the real-time temperature of the liner does not reach the stable temperature.
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