CN106498370B - A kind of vacuum chamber high temperature CVD heating coil structure - Google Patents
A kind of vacuum chamber high temperature CVD heating coil structure Download PDFInfo
- Publication number
- CN106498370B CN106498370B CN201611251450.3A CN201611251450A CN106498370B CN 106498370 B CN106498370 B CN 106498370B CN 201611251450 A CN201611251450 A CN 201611251450A CN 106498370 B CN106498370 B CN 106498370B
- Authority
- CN
- China
- Prior art keywords
- stainless steel
- heating coil
- fixed disc
- sealing ring
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 52
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 67
- 239000010935 stainless steel Substances 0.000 claims abstract description 67
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000010949 copper Substances 0.000 claims abstract description 58
- 229910052802 copper Inorganic materials 0.000 claims abstract description 58
- 238000007789 sealing Methods 0.000 claims abstract description 42
- 239000000498 cooling water Substances 0.000 claims abstract description 30
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000001816 cooling Methods 0.000 claims abstract description 15
- 238000009413 insulation Methods 0.000 claims description 29
- 238000009434 installation Methods 0.000 claims description 19
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 36
- 229910010271 silicon carbide Inorganic materials 0.000 description 35
- 239000000463 material Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
Abstract
The present invention discloses a kind of vacuum chamber high temperature CVD heating coil structure comprising：Stainless Steel Shell with airtight chamber is equipped with water-cooling structure in Stainless Steel Shell；Copper pipe heating coil sets, it includes copper pipe heating coil and is installed on the first of copper pipe heating coil both ends, second fixed connection structure and it is connected to first, stainless steel base seat between second fixed connection structure, copper pipe heating coil sets cooperate the first screw locking in Stainless Steel Shell by stainless steel base seat, copper pipe heating coil is placed in airtight chamber, the hollow channel that there is copper pipe heating coil Cooling Water to pass through, and its both ends is respectively formed cooling water water inlet end and cooling water water outlet, the cooling water water inlet end and cooling water water outlet are each passed through first, it is external that second fixed connection structure is revealed in stainless steel case；It is respectively equipped with the first, second sealing ring between first, second fixed connection structure and stainless steel base seat, third sealing ring is equipped between stainless steel base seat and Stainless Steel Shell inner wall.
Description
Technical field：
The present invention relates to high-temperature vacuum equipment manufacturing technology fields, refer in particular to a kind of vacuum chamber high temperature CVD heater wire loop knot
Structure.
Background technique：
Silicon carbide (SiC) is a kind of important wide bandgap semiconductor materials, and high temperature, high frequency, high-power SiC device are in new energy
The fields such as source (photovoltaic power generation and wind-powered electricity generation), electric car, motor control, rail traffic, power grid, weaponry have huge answer
Use prospect.
SiC CVD epitaxial material growth, in occupation of critical role, and plays an important role in SiC technical industry chain,
This is because：1, SiC CVD epitaxial material growth is a key technology of SiC power device manufacture；2, SiC device structural wood
Material needs to realize by CVD growth technology, because diffusion of 1800 DEG C or less the foreign atoms in SiC can be ignored；
3, each n-type of composition SiC power device material, p-type structure sheaf by CVD epitaxial growth sometimes for being realized completely, such as
N-IGBT device material；(4) fast development of SiC CVD epitaxial material growth technology, pushed the research and development of SiC power device with
Commercialization.
SiC growth technology developing direction and trend are mainly reflected in the following aspects：1,10kV grades of 4H-SiC function
Rate device and its material.The characteristics of SiC is manufacture high pressure, superelevation voltage device；2, having a size of the large area SiC of Ф 150mm (6 ")
Epitaxial growth.In addition to 6 inches of SiC wafers are to be commercialized, 8 inches of SiC wafers have also been demonstrated, by increasing SiC wafer diameter,
The manufacturing cost of SiC power device can be reduced, realize sizable application and is popularized；3, the SiC epitaxial material growth of low-defect-density,
To improve device yield, to reduce cost；4, long carrier lifetime technology improves device property (10kV-5 μ s, 20kV-10 μ
s)。
As a key technology of SiC power device manufacture, the performance of SiC epitaxial growth equipment, safety, operation
Property, have become evaluation epitaxial device an important factor for such as ease for maintenance.In the SiC epitaxial device having been commercialized at present, outside SiC
Prolong growth room there are two types of typical structure, i.e., " warm wall " the CVD epitaxial growth system based on stainless steel chamber and is based on quartz cavity
" hot wall " CVD epitaxial growth system of room.So-called " hot wall " refers to that the temperature of SiC substrate chip surrounding is identical, whereas if with
The temperature of SiC wafer opposite side is lower than the temperature of SiC wafer side, then the system is known as " cold wall " or " warm wall ".Due to " heat
There is wall " system apparent advantage and stainless steel system to have apparent peace in terms of large area, thick film SiC epitaxial growth
Full sexual clorminance.
In addition, " hot wall " SiC epitaxial growth temperature generally in the range of 1550-1650 DEG C, usually uses copper solenoid
High frequency or frequency induction heating, and the primary condition of SiC epitaxial growth is low pressure (pressure 100mbar), high temperature, i.e.,
While meeting hot conditions, also to meet lower pressure.
For this purpose, the present invention proposes a kind of vacuum chamber high temperature CVD heating coil structure, to solve heating coil and stainless steel
The electrical isolation and the high problem of leak rate of chamber, realize high security " hot wall " SiC epitaxial growth equipment based on stainless steel chamber
Required low pressure and high temperature epitaxy condition.
Summary of the invention：
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of vacuum chamber high temperature CVD heater wire loop knots
Structure.
In order to solve the above-mentioned technical problem, present invention employs following technical proposals：Vacuum chamber high temperature CVD heater wire
Coil structures include：Stainless Steel Shell is provided with water-cooling structure in the Stainless Steel Shell, and is formed in the stainless steel case body closed
Chamber；Copper pipe heating coil sets comprising copper pipe heating coil and be installed on the first, second of copper pipe heating coil both ends
Fixed connection structure and the stainless steel base seat being connected between the first, second fixed connection structure, the copper pipe heating coil sets
Cooperate the first screw locking in Stainless Steel Shell by stainless steel base seat, which is placed in the airtight chamber
Interior, which has the hollow channel that passes through of Cooling Water, and its both ends is respectively formed cooling water water inlet end and cold
But water water outlet, the cooling water water inlet end and cooling water water outlet are each passed through the first, second fixed connection structure and are revealed in
Stainless steel case is external；The first, second sealing is respectively arranged between first, second fixed connection structure and stainless steel base seat
Circle, and third sealing ring is provided between the stainless steel base seat and Stainless Steel Shell inner wall.
Furthermore, in above-mentioned technical proposal, first fixed connection structure include successively be socketed on cooling water into
Copper fixed disc on the first of water end (W.E.) periphery, insulate on first fixed disc, the first lower insulation fixed disc, the first lower copper are fixed
Disk, between locked by the first screw, wherein insulate fixed disc on first and the first lower insulation fixed disc be clamped in
Stainless steel base seat upper and lower ends, and this insulate fixed disc lower end on first and the first lower insulation fixed disc upper end block it is stainless
In steel base seat, this on first insulation fixed disc be pressed on the first sealing ring, copper is consolidated on the fixed disc and first that insulate on first
The 4th sealing ring is provided between fixed disk.
Furthermore, in above-mentioned technical proposal, the stainless steel base seat is provided with to be fixedly connected for described first, second
The first, second mounting hole that structure is worn, and the first, second mounting hole periphery is also respectively arranged at second, third groove, institute
The first, second sealing ring is stated to be respectively placed in second, third groove, and the first, second sealing ring upper end protrude from second,
Outside third groove.
Furthermore, in above-mentioned technical proposal, copper fixed disc and the first lower copper fixed disc difference on described first
It is provided with the first, second perforation worn for the cooling water water inlet end, first, second perforation and cooling water water inlet end outer wall
Between fixed by welded seal.
Furthermore, in above-mentioned technical proposal, copper fixed disc lower end surface is set to first annular ditch on described first
Slot, the 4th sealing ring are placed in the first annular groove, and the thickness of the 4th sealing ring is greater than first annular groove
Depth, so that the 4th sealing ring lower end protrudes from outside first annular groove.
Furthermore, in above-mentioned technical proposal, it is clamped convex to form first for insulation fixed disc lower end on described first
Platform, the first clamped boss from top to bottom inlay card in the first mounting hole, this on first insulation fixed disc press on the first peace
It fills outside the top edge of hole, and is pressed on the first sealing ring；Described first lower insulation fixed disc upper end forms the second clamped boss,
For inlay card in the first mounting hole, which presses on the first mounting hole to the second clamped boss from bottom to top
Outside lower edge, and this insulate on first and is provided with gasket between fixed disc and the first lower insulation fixed disc, the gasket
Periphery is connected with the sealing of the first inner wall of the hole installing.
Furthermore, in above-mentioned technical proposal, second fixed connection structure is identical as the first fixed connection structure.
Furthermore, in above-mentioned technical proposal, rectangular-shape is presented in the Stainless Steel Shell comprising chassis, several
The side plate for being installed on chassis periphery and the top cover for being installed on side plate upper end are provided with water cooling in the chassis and side plate and top cover
Structure is provided with an installation position on the chassis, and the stainless steel base seat and the first, second fixed connection structure are with detachable side
Formula is installed on the installation position on chassis.
Furthermore, in above-mentioned technical proposal, the chassis is provided with fourth annular groove in installation position periphery, this
Three sealing rings are placed in the fourth annular groove, and the thickness of the third sealing ring is greater than the depth of fourth annular groove, so that
The third sealing ring lower end protrudes from outside fourth annular groove.
Furthermore, in above-mentioned technical proposal, one has been wound in the middle part of the copper pipe heating coil and has been square or justifies
The spire of shape is formed with the installation space for the installation of induction heating body in the spire.
After adopting the above technical scheme, the present invention has the advantages that compared with prior art：In the present invention
Stainless Steel Shell and copper pipe heating coil sets are independent assembly, are modularized structure, between by can quickly tear open
The mode of dress is assembled, that is to say, that the present invention realizes modularized structure and modularization is installed, and breaches vacuum indoor water
Heating coil bottleneck difficult to install in cold type, and the present invention has at low cost, installation is simple, easy to maintain, the spies such as high security
Point enables the present invention have the extremely strong market competitiveness.In addition, present invention design avoids the leakage problem of stainless steel chamber, it is real
The coexisting structure of hermetic seal and water-cooling system is showed.In addition, the present invention is widely used, may not only be applied to SiC single crystal growth furnace,
High-temperature annealing furnace after SiC epitaxial furnace and ion implanting, it may also be used for the upper graphene growth furnace of SiC, aluminium nitride high growth temperature
Other high-temperature services such as furnace.
Detailed description of the invention：
Fig. 1 is main view of the invention (internal visible)；
Fig. 2 is left view of the invention (internal visible)；
Fig. 3 is the structural schematic diagram on chassis in the present invention；
Fig. 4 is the structural schematic diagram of copper pipe heating coil sets in the present invention；
Fig. 5 is the main view of copper pipe heating coil sets in the present invention；
Fig. 6 be first in the present invention on copper fixed disc structural schematic diagram；
Fig. 7 be first in the present invention on insulate fixed disc structural schematic diagram；
Fig. 8 is the main view of stainless steel base seat in the present invention；
Fig. 9 is the rearview of stainless steel base seat in the present invention.
Specific embodiment：
The present invention is further described with attached drawing combined with specific embodiments below.
It is a kind of vacuum chamber high temperature CVD heating coil structure as shown in Fig. 1-9 comprising：Stainless Steel Shell 1 and
The copper pipe heating coil sets 200 being detachably installed in Stainless Steel Shell 1.
It is provided with water-cooling structure in the Stainless Steel Shell 1, and is formed with airtight chamber 10 in the Stainless Steel Shell 1；Tool
For body, rectangular-shape is presented in the Stainless Steel Shell 1 comprising chassis 11, several side plates 12 for being installed on 11 periphery of chassis
And it is installed on the top cover 13 of 12 upper end of side plate, it is provided with water-cooling structure in the chassis 11 and side plate 12 and top cover 13, the bottom
An installation position 111 is provided on disk 11.
The copper pipe heating coil sets 200 are including copper pipe heating coil 2 and are installed on 2 both ends of copper pipe heating coil
First, second fixed connection structure 3,4 and the stainless steel base seat 5 being connected between the first, second fixed connection structure 3,4, should
Copper pipe heating coil sets 200 cooperate the first screw locking in Stainless Steel Shell 1 by stainless steel base seat 5, copper pipe heating
Coil 2 is placed in the airtight chamber 10, the hollow channel which there is Cooling Water to pass through, and its both ends
It is respectively formed cooling water water inlet end 21 and cooling water water outlet 22, the cooling water water inlet end 21 and cooling water water outlet 22 are worn respectively
The first, second fixed connection structure 3,4 is crossed to be revealed in outside Stainless Steel Shell 1；The stainless steel base seat 5 and first, second is solid
Determine connection structure 3,4 to be removably installed on the installation position 111 on chassis 11.
The copper pipe heating coil 2 is formed by copper pipe coiling, has been wound one in the middle part of the copper pipe heating coil 2 and has been square
Or circular spire 23, the installation space for the installation of induction heating body is formed in the spire 23, copper pipe heating coil 2 has
There is the hollow channel that Cooling Water passes through, hollow channel leads to cooling water, with cooling copper tube heating coil.
The first, second sealing is respectively arranged between first, second fixed connection structure 3,4 and stainless steel base seat 5
Circle 61,62, and it is provided with third sealing ring 63 between 1 inner wall of stainless steel base seat 5 and Stainless Steel Shell, so that copper pipe heater wire
Coil assembly 200 and Stainless Steel Shell 1 form sealing assembly.
The chassis 11 is provided with fourth annular groove 112 in 111 periphery of installation position, the third sealing ring 63 be placed in this
In four ring-shaped grooves 112, and the thickness of the third sealing ring 63 is greater than the depth of fourth annular groove 112, so that the third is close
63 lower end of seal protrudes from outside fourth annular groove 112.
First fixed connection structure 3 includes the fixed circle of copper on be successively socketed on 21 periphery of cooling water water inlet end first
Insulate the lower copper fixed disc 34 of the lower insulation fixed disc 33, first of fixed disc 32, first on disk 31, first, between pass through
First screw locking, wherein insulation fixed disc 33 is clamped in stainless steel base seat 5 under insulate on first fixed disc 32 and first
Upper and lower ends, and this insulate 32 lower end of fixed disc on first and stainless steel base seat is blocked in the first lower insulation 33 upper end of fixed disc
In 5, this on first insulation fixed disc 32 be pressed on the first sealing ring 61, copper is consolidated on the fixed disc 32 and first that insulate on first
The 4th sealing ring 64 is provided between fixed disk 31.Insulate fixed disc 32 and the first lower fixed disc 33 that insulate on described first
Symmetrical assembly, clamping are set to stainless 5 upper and lower ends of steel base seat, copper fixed disc 31 and the first lower copper fixed disc on first
34 symmetrical assembly.
The lower copper fixed disc 34 of the lower insulation fixed disc 33, first of the fixed disc 32, first that insulate on described first is distinguished
It is provided with second, third for supplying above-mentioned first screw to pass through, fourth hole 301,302,303, and the fixed circle of copper on above-mentioned first
Disk is provided with non-the the second penetrating threaded hole 304 being adapted to first screw, which sequentially passes through fourth hole
303, after third through-hole 302, the second through-hole 301, spiral is fixed on the second threaded hole 304, so that by copper fixed disc on first
31, the lower copper fixed disc 34 of the lower insulation fixed disc 33, first of insulation fixed disc 32, first locks on first.
The stainless steel base seat 5 is provided with the first, second peace worn for first, second fixed connection structure 3,4
Fill hole 51,52, and first, second mounting hole, 51,52 periphery is also respectively arranged at second, third groove 53,54, described the
One, the second sealing ring 61,62 is respectively placed in second, third groove 53,54, and first, second sealing ring 61,62 upper ends are equal
It protrudes from outside second, third groove 53,54.
The stainless steel base seat 5 is provided with non-the the first penetrating threaded hole 501 being adapted to first screw, the bottom
Disk 11 is provided with the first through hole 101 being adapted to the first threaded hole 501 in 111 periphery of installation position, which passes through the bottom
101 spiral of first through hole of disk 11 is fixed in the first threaded hole 501 of stainless steel base seat 5, so that stainless steel base seat 5 is fixed
In on chassis 11.
The stainless steel base seat 5 can be equipped with water-cooling structure, the water-cooling structure be a sink, sink both ends be water outlet and
Water inlet is carried out cooling to it by water-cooling pattern, radiated.
Copper fixed disc 31 and the first lower copper fixed disc 34 are respectively arranged with and intake for the cooling water on described first
The first, second perforation 311,341 that end 21 is worn, between first, second perforation 311,341 and 21 outer wall of cooling water water inlet end
It is fixed by welded seal, not only guarantees the stability of product structure with this, it is also ensured that the air-tightness of its assembling structure.
31 lower end surface of copper fixed disc is set to first annular groove 312 on described first, and the 4th sealing ring 64 is set
In the first annular groove 312, and the thickness of the 4th sealing ring 64 is greater than the depth of first annular groove 312, so that should
4th sealing ring, 64 lower end protrudes from outside first annular groove 312.
On described first insulate 32 lower end of fixed disc form the first clamped boss 321, the first clamped boss 321 by
Upper downward inlay card in the first mounting hole 51, this on first insulation fixed disc 32 press on outside 51 top edge of the first mounting hole,
And it is pressed on the first sealing ring 61；Described first lower insulation 33 upper end of fixed disc forms the second clamped boss 331, this second
Inlay card can make to insulate under fixed disc 32 and first on first clamped boss 331 in the first mounting hole 51 from bottom to top with this
Insulation fixed disc 33, which is stablized to sandwich, to be fixed in stainless steel base seat 5, guarantees the stability of product structure.In addition, first is lower exhausted
Edge fixed disc 33 presses on outside 51 lower edge of the first mounting hole, and this on first insulation fixed disc 32 with the first lower insulation admittedly
It is provided with gasket between fixed disk 33, which is connected with the sealing of 51 inner wall of the first mounting hole, can be further with this
Guarantee the airtightness of product structure.
Second fixed connection structure 4 is identical as the first fixed connection structure 3, and this is no longer going to repeat them.
Stainless Steel Shell 1 and copper pipe heating coil sets 200 in the present invention are independent assembly, are modularization knot
Structure, between assembled by way of fast demountable, that is to say, that the present invention realizes modularized structure and modularization
Installation breaches the bottleneck that heating coil is difficult to install in vacuum chamber internal water cooling, and the present invention has at low cost, installation letter
It is single, it is easy to maintain, the features such as high security, enable the present invention that there is the extremely strong market competitiveness.In addition, present invention design avoids not
The leakage problem of rust steel chamber, realizes the coexisting structure of hermetic seal and water-cooling system.In addition, the present invention is widely used, not only
It can be used for high-temperature annealing furnace after SiC single crystal growth furnace, SiC epitaxial furnace and ion implanting, it may also be used for the upper graphene of SiC is raw
Other high-temperature services such as long furnace, aluminium nitride high-temperature growth furnace.
Certainly, the above is only a specific embodiment of the present invention, be not to limit the scope of the present invention, it is all according to
The equivalent change or modification that structure, feature and principle described in scope of the present invention patent is done should be included in Shen of the present invention
It please be in the scope of the patents.
Claims (10)
1. a kind of vacuum chamber high temperature CVD heating coil structure, it is characterised in that：Including：
Stainless Steel Shell (1) is provided with water-cooling structure in the Stainless Steel Shell (1), and is formed in the Stainless Steel Shell (1) close
Closed chamber room (10)；
Copper pipe heating coil sets (200) comprising copper pipe heating coil (2) and be installed on copper pipe heating coil (2) both ends
The first, second fixed connection structure (3,4) and the stainless base steel that is connected between the first, second fixed connection structure (3,4)
Seat (5), the copper pipe heating coil sets (200) cooperate the first screw locking in Stainless Steel Shell (1) by stainless steel base seat (5)
In, which is placed in the airtight chamber (10), which passes through with Cooling Water
Hollow channel, and its both ends is respectively formed cooling water water inlet end (21) and cooling water water outlet (22), the cooling water water inlet end
(21) it is each passed through the first, second fixed connection structure (3,4) with cooling water water outlet (22) and is revealed in Stainless Steel Shell (1)
Outside；
The first, second sealing is respectively arranged between first, second fixed connection structure (3,4) and stainless steel base seat (5)
It encloses (61,62), and is provided with third sealing ring (63) between the stainless steel base seat (5) and Stainless Steel Shell (1) inner wall.
2. a kind of vacuum chamber according to claim 1 high temperature CVD heating coil structure, it is characterised in that：Described first
Fixed connection structure (3) includes copper fixed disc (31), first on be successively socketed on cooling water water inlet end (21) periphery first
Upper insulation fixed disc (32), the first lower insulation fixed disc (33), first lower copper fixed disc (34), between pass through first
Screw locking, wherein insulate fixed disc (32) on first and the first lower insulation fixed disc (33) is clamped in stainless steel base seat
(5) upper and lower ends, and this insulate fixed disc (32) lower end on first and first lower insulation fixed disc (33) upper end is blocked not
Become rusty in steel base seat (5), this on first insulation fixed disc (32) be pressed on the first sealing ring (61), insulate fixed disc on first
(32) and on first the 4th sealing ring (64) is provided between copper fixed disc (31).
3. a kind of vacuum chamber according to claim 2 high temperature CVD heating coil structure, it is characterised in that：It is described stainless
Steel base seat (5) is provided with the first, second mounting hole (51,52) worn for first, second fixed connection structure (3,4),
And first, second mounting hole (51,52) periphery is also respectively arranged at second, third groove (53,54), described first, second
Sealing ring (61,62) is respectively placed in second, third groove (53,54), and the first, second sealing ring (the 61,62) upper end is equal
Protrude from second, third groove (53,54) outside.
4. a kind of vacuum chamber according to claim 3 high temperature CVD heating coil structure, it is characterised in that：Described first
Upper copper fixed disc (31) and first descends copper fixed disc (34) to be respectively arranged with what the confession cooling water water inlet end (21) wore
First, second perforates (311,341), logical between the first, second perforation (311,341) and cooling water water inlet end (21) outer wall
Welded seal is crossed to fix.
5. a kind of vacuum chamber according to claim 4 high temperature CVD heating coil structure, it is characterised in that：Described first
Upper copper fixed disc (31) lower end surface is set to first annular groove (312), and the 4th sealing ring (64) is placed in first ring
In shape groove (312), and the thickness of the 4th sealing ring (64) is greater than the depth of first annular groove (312), so that the 4th
Sealing ring (64) lower end protrudes from first annular groove (312) outside.
6. a kind of vacuum chamber according to claim 5 high temperature CVD heating coil structure, it is characterised in that：Described first
Upper insulation fixed disc (32) lower end forms the first clamped boss (321), the first clamped boss (321) inlay card from top to bottom
In the first mounting hole (51), this on first insulation fixed disc (32) press on outside the first mounting hole (51) top edge, and press
On the first sealing ring (61)；Described first lower insulation fixed disc (33) upper end forms the second clamped boss (331), this
In the first mounting hole (51), which presses on inlay card two clamped boss (331) from bottom to top
Outside first mounting hole (51) lower edge, and this on first insulation fixed disc (32) lower insulate between fixed disc (33) with first
It is provided with gasket, which is connected with the sealing of the first mounting hole (51) inner wall.
7. a kind of vacuum chamber according to claim 6 high temperature CVD heating coil structure, it is characterised in that：Described second
Fixed connection structure (4) is identical as the first fixed connection structure (3).
8. a kind of vacuum chamber high temperature CVD heating coil structure, feature described in -7 any one exist according to claim 1
In：Rectangular-shape is presented in the Stainless Steel Shell (1) comprising chassis (11), several side plates for being installed on chassis (11) periphery
(12) it and is installed in the top cover (13) of side plate (12) upper end, the chassis (11) and side plate (12) and top cover (13) and is provided with
Water-cooling structure is provided with an installation position (111) on the chassis (11), the stainless steel base seat (5) and first, second is fixedly connected
Structure (3,4) is removably installed on the installation position (111) of chassis (11).
9. a kind of vacuum chamber according to claim 8 high temperature CVD heating coil structure, it is characterised in that：The chassis
(11) installation position (111) periphery is provided with fourth annular groove (112), which is placed in the fourth annular ditch
In slot (112), and the thickness of the third sealing ring (63) is greater than the depth of fourth annular groove (112), so that the third seals
Circle (63) lower end protrudes from fourth annular groove (112) outside.
10. a kind of vacuum chamber high temperature CVD heating coil structure, feature described in -7 any one exist according to claim 1
In：It has been wound one in the middle part of the copper pipe heating coil (2) to be square or circular spire (23), in the spire (23)
It is formed with the installation space for the installation of induction heating body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611251450.3A CN106498370B (en) | 2016-12-30 | 2016-12-30 | A kind of vacuum chamber high temperature CVD heating coil structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611251450.3A CN106498370B (en) | 2016-12-30 | 2016-12-30 | A kind of vacuum chamber high temperature CVD heating coil structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106498370A CN106498370A (en) | 2017-03-15 |
| CN106498370B true CN106498370B (en) | 2018-11-16 |
Family
ID=58333612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611251450.3A Active CN106498370B (en) | 2016-12-30 | 2016-12-30 | A kind of vacuum chamber high temperature CVD heating coil structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106498370B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107732249A (en) * | 2017-09-11 | 2018-02-23 | 张洪 | Copper foil graphene collector and preparation method |
| CN112760617B (en) * | 2020-12-30 | 2023-04-07 | 上海埃延半导体有限公司 | Non-metal reaction chamber for chemical vapor deposition and use method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5769944A (en) * | 1995-12-19 | 1998-06-23 | Korea Institute Of Science And Technology | Vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying axial magnetic field |
| CN102747418A (en) * | 2012-07-25 | 2012-10-24 | 东莞市天域半导体科技有限公司 | High-temperature large area silicon carbide epitaxial growth device and treatment method |
| CN202610320U (en) * | 2012-05-08 | 2012-12-19 | 东莞市天域半导体科技有限公司 | Height fine-adjustment device for high-temperature CVD (chemical vapor deposition) growth chamber |
| CN204272417U (en) * | 2014-12-11 | 2015-04-15 | 河北同光晶体有限公司 | A kind of bracing or strutting arrangement for load coil |
| CN104928754A (en) * | 2014-03-18 | 2015-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Adjusting device, reaction chamber and semiconductor processing device |
| CN105185970A (en) * | 2015-08-13 | 2015-12-23 | 深圳市贝特瑞新能源材料股份有限公司 | Silicon-coated carbon particle composite material and preparation method and equipment and application |
| CN105200515A (en) * | 2015-09-24 | 2015-12-30 | 山东大学 | Induction coil for SiC single-crystal growth furnace and application thereof |
| CN206438176U (en) * | 2016-12-30 | 2017-08-25 | 东莞市天域半导体科技有限公司 | A kind of vacuum chamber high temperature CVD heating coil structures |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101199028B1 (en) * | 2012-03-14 | 2012-11-08 | (주)혜원전기 | Cooling coil fixing apparatus for cold and warmth water purifier |
-
2016
- 2016-12-30 CN CN201611251450.3A patent/CN106498370B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5769944A (en) * | 1995-12-19 | 1998-06-23 | Korea Institute Of Science And Technology | Vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying axial magnetic field |
| CN202610320U (en) * | 2012-05-08 | 2012-12-19 | 东莞市天域半导体科技有限公司 | Height fine-adjustment device for high-temperature CVD (chemical vapor deposition) growth chamber |
| CN102747418A (en) * | 2012-07-25 | 2012-10-24 | 东莞市天域半导体科技有限公司 | High-temperature large area silicon carbide epitaxial growth device and treatment method |
| CN104928754A (en) * | 2014-03-18 | 2015-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Adjusting device, reaction chamber and semiconductor processing device |
| CN204272417U (en) * | 2014-12-11 | 2015-04-15 | 河北同光晶体有限公司 | A kind of bracing or strutting arrangement for load coil |
| CN105185970A (en) * | 2015-08-13 | 2015-12-23 | 深圳市贝特瑞新能源材料股份有限公司 | Silicon-coated carbon particle composite material and preparation method and equipment and application |
| CN105200515A (en) * | 2015-09-24 | 2015-12-30 | 山东大学 | Induction coil for SiC single-crystal growth furnace and application thereof |
| CN206438176U (en) * | 2016-12-30 | 2017-08-25 | 东莞市天域半导体科技有限公司 | A kind of vacuum chamber high temperature CVD heating coil structures |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106498370A (en) | 2017-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102151001B1 (en) | High temperature electrostatic chuck with real-time heat zone regulating capability | |
| CN101809717B (en) | Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses | |
| CN106498370B (en) | A kind of vacuum chamber high temperature CVD heating coil structure | |
| TW201626497A (en) | Electrostatic chuck assembly for high temperature processes | |
| CN104377155B (en) | Electrostatic chuck and plasma processing device | |
| CN103184514B (en) | crystal growing furnace | |
| CN102691109B (en) | Vertical silicon carbide high-temperature oxidation device | |
| WO2020015523A1 (en) | Process chamber and heat treatment furnace | |
| CN103526186A (en) | Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor | |
| WO2018114642A1 (en) | Synthetic diamond plates | |
| CN104810397B (en) | A kind of super junction silicon carbide MOSFET device and preparation method thereof | |
| CN206438176U (en) | A kind of vacuum chamber high temperature CVD heating coil structures | |
| US9587326B2 (en) | Silicon carbide epitaxial wafer, method for manufacturing silicon carbide epitaxial wafer, device for manufacturing silicon carbide epitaxial wafer, and silicon carbide semiconductor element | |
| CN102778468A (en) | Low-temperature accessory for X-ray diffractometer | |
| CN2730890Y (en) | Horizontal ion implantation silicon carbide high-temp. annealing device | |
| CN102747425B (en) | Horizontal type silicon carbide high-temperature oxidation device | |
| US20080052901A1 (en) | Method, tool, and apparatus for manufacturing a semiconductor device | |
| CN104752129A (en) | Tray assembly and etching device | |
| CN101591803B (en) | High-temperature carborundum double-chamber hot wall type epitaxial growth device | |
| WO2020052432A1 (en) | Electrostatic chuck | |
| CN1312079C (en) | Manufacturing device of vertical high temperature high power silicon carbide epitaxy material | |
| CN203583011U (en) | Dual-seal structure for ultrahigh-temperature double-layer water-cooled quartz tube vacuum chamber | |
| CN202671720U (en) | Horizontal silicon carbide high-temperature oxidation device | |
| CN105964200A (en) | Kettle door sealing and cooling device | |
| CN219363874U (en) | Vertical silicon carbide high-temperature annealing furnace device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: High-temperature CVD heating coil structure for vacuum chamber Effective date of registration: 20190715 Granted publication date: 20181116 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: 2019440000263 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee after: Guangdong Tianyu Semiconductor Co.,Ltd. Address before: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee before: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230406 Granted publication date: 20181116 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: 2019440000263 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A High Temperature CVD Heating Coil Structure for Vacuum Chamber Effective date of registration: 20230512 Granted publication date: 20181116 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: Guangdong Tianyu Semiconductor Co.,Ltd. Registration number: Y2023980040499 |