CN106486395A - Protection band method of attaching and protection band sticker - Google Patents
Protection band method of attaching and protection band sticker Download PDFInfo
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- CN106486395A CN106486395A CN201610675658.1A CN201610675658A CN106486395A CN 106486395 A CN106486395 A CN 106486395A CN 201610675658 A CN201610675658 A CN 201610675658A CN 106486395 A CN106486395 A CN 106486395A
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- protection band
- shell
- semiconductor crystal
- band
- crystal wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Abstract
The present invention provides a kind of protection band method of attaching and protection band sticker.Protection band precision is pasted on semiconductor crystal wafer well within the chamber using pressure differential.The protection band bigger than the internal diameter of the chamber is pasted at the junction surface of one of the 1st paired shell for constituting chamber and the 2nd shell.In the state of the junction surface by the 1st shell and the 2nd shell clips protection band; while making semiconductor crystal wafer and the adhesive surface of protection band be close to and opposite edge formation chamber; predetermined air pressure is depressurized to, protection band is pasted on the middle body of semiconductor crystal wafer using pressing member pressing protection band.Afterwards, pressing of the pressing member to protection band is released, makes the air pressure in the space of the 2nd shell lower than the air pressure in the space of the 1st shell by protection band from the central side of semiconductor crystal wafer towards the radial stickup in periphery.
Description
Technical field
The present invention relates to the circuit that protection band is pasted on semiconductor crystal wafer forms protection band method of attaching and the protection in face
Band sticker.
Background technology
Semiconductor crystal wafer (hereinafter appropriately referred to as " wafer ") is formed with the circuit pattern of many elements on its surface.For example exist
Crystal column surface is formed with projection, fine circuits.When therefore, in order to overleaf be ground and conveying when prevent the circuit face pollution and
Damage, be pasted with protection band.
The method for pasting protection band applies uniform tension force with the length direction of the protection band along banding and width
Mode implement.I.e., protection band is clipped in the bonding part of the chamber being made up of shell paired up and down, make to be divided by the protection band
The two spaces being divided into produce pressure differential.Now, protection band direction is made to configure in the way of being close to and be relative with protection band
Wafer elastic deformation gradually paste on one side.
Afterwards, protected due to the concavo-convex impact such as projection of crystal column surface using the pressing plate pressing being equipped with the chamber
Produce concavo-convex of the base material on the surface of protecting band and make its flat (with reference to patent document 1).
Patent document 1：Japanese Unexamined Patent Publication 2014-49626 publication
Content of the invention
Problems to be solved by the invention
In conventional method, it is contemplated that：When the two spaces for making within the chamber generate pressure differential, protection band is to air pressure
Relatively low direction is concavely curved and gradually pastes radial for protection band from the central authorities of wafer.However, pasting protection band
Afterwards, the bonding interface that bubble is involved in the middle section of wafer is confirmed.
Produce the bubble to heat expansion, make the such problem of wafer breakage due to the friction when back side of wafer is ground.
The present invention be in view of such situation and make, its main purpose be to provide a kind of protection band method of attaching and
Protection band sticker, wherein, in protection band being pasted on semiconductor die bowlder within the chamber using pressure differential, bubble will not
The bonding interface of the protection band and semiconductor crystal wafer is involved in, and precision pastes the protection band well.
For solution to problem
Therefore, the present inventor etc. in order to verify bonding interface produce bubble experiment, mould is repeated the reason for being involved in
Intend, so as to obtain following opinion.
First, as shown in figure 23, as in the past by shell 100A and lower casing 100B clip the shape of protection band PT
Under state, by two spaces while after being depressurized to identical air pressure, the leak valve 101 to being arranged at upper shell 100A side is grasped
Make and improve the air pressure in the space.That is, the air pressure of lower casing 100B side is lower than the air pressure of upper shell 100A.Now, it is
Planarize base material, the flowing of the gas of inflow is subject to the pressing plate 103 for being provided within the chamber to limit, it is known that：Along on
After the inwall flowing of shell 100A, to center side inflow between pressing plate 103 and protection band PT.I.e., initial protection band PT
The outer circumferential side of wafer W is pasted, afterwards, is pasted towards center, therefore, as shown in figure 24, paste the wafer W after protection band PT and exist
The bonding interface of middle body is formed with and is involved in alveolate space.
The present invention takes following such technical scheme to solve such problem.
The circuit that protection band is pasted on semiconductor crystal wafer is formed face by a kind of i.e., protection band method of attaching, its, and its feature exists
In the protection band method of attaching includes following operation：
1st adhering processes, in the 1st adhering processes, the 1st shell of chamber and the 2nd shell is constituted, this is paired outer
The protection band bigger than the internal diameter of the chamber is pasted at the junction surface of one of shell；
Decompression operation, in the state of the junction surface by the 1st shell and the 2nd shell clips the protection band,
Semiconductor crystal wafer and the adhesive surface of the protection band is made to be close to and opposite edge formation chamber, to two skies being separated into by protection band
Between reduced pressure；
2nd adhering processes, in the 2nd adhering processes, using pressing member press the protection band middle body and
The middle body of protection band is pasted on the middle body of semiconductor crystal wafer；
Operation is released, in the releasing operation, releases pressing of the pressing member to protection band；
3rd adhering processes, in the 3rd adhering processes, make storage keep the 2nd shell of the semiconductor crystal wafer
The air pressure in space is than the low one side of the air pressure in the space of the 1st shell by protection band from the central side of semiconductor crystal wafer towards periphery in putting
Penetrate shape stickup.
(action effect), is utilized according to said method after the two spaces of within the chamber are depressurized to such as vacuum
Pressing member presses the central authorities of protection band and the central authorities of protection band is pasted on the central authorities of semiconductor crystal wafer.Now, protection band with
The center of semiconductor crystal wafer becomes concavely curved shape for starting point elastic deformation, therefore, as the air pressure for making the 2nd shell reduces, protects
Protecting band is gradually pasted from the center side of semiconductor crystal wafer towards periphery.Thus, bubble will not be involved in the central authorities of semiconductor crystal wafer
Protection band precision just can be pasted on wafer by bonding interface well.
Moreover it is preferred that in the 2nd adhering processes, being pressed using the pressing member of the elastomer by semi-spherical shape is included
The operation for being pressed on protection band makes the pressing member elastic deformation while protection band is pasted on semiconductor crystal wafer.
According to the method, it is easy to make protection band elastic deformation become concavely curved shape.I.e., when the 3rd adhering processes, energy
Enough peripheries for reliably avoiding initial protection band from being pasted on semiconductor crystal wafer.
In addition, the present invention takes composition as following to solve such problem.
The circuit that protection band is pasted on semiconductor crystal wafer is formed face by a kind of i.e., protection band sticker, its, and its feature exists
In the protection band sticker includes：
Holding station, its keep the semiconductor crystal wafer；
Chamber, its are made up of the paired shell for receiving the holding station；
Band supply unit, its supply protection band bigger than the internal diameter of the shell；
Protection band is pasted on the junction surface of one of the shell for 1st labelling machine, its；
2nd labelling machine, its within the chamber using pressing member pressing protection band be placed in the half of holding station
Semiconductor wafer be close to and relative middle body and protection band is pasted on the middle body of the semiconductor crystal wafer；
3rd labelling machine, makes the two spaces of the within the chamber being separated into by the protection band produce pressure differential and will protect
Paste with the radial periphery towards semiconductor crystal wafer；
Shut-off mechanism, which is along the profile tripping protection band of the semiconductor crystal wafer；
Remaining for the shape of the semiconductor crystal wafer under the cutting of protection band is partially stripped by mechanism for stripping, its；
Band recoverer, which reclaims the protection band after peeling off.
Protection band can be pasted on using the pressing member arranged within the chamber by (action effect) according to above-mentioned composition
The middle body of semiconductor crystal wafer.I.e., in the state of protection band elastic deformation becomes concavely curved, pressure is produced by making within the chamber
Power is poor, can paste protection band from the middle body of semiconductor crystal wafer towards periphery.Thus, it is possible to rightly implement above-mentioned side
Method.
Moreover it is preferred that the pressing member that the 2nd labelling machine has is the semi-spherical shape for including elastomer.
The effect of invention
According to protection band method of attaching and the protection band sticker of the present invention, can prevent bubble be involved in protection band with
The bonding interface of semiconductor crystal wafer, and apply uniform tension force to protection band while being pasted on semiconductor crystal wafer.
Description of the drawings
Fig. 1 is the front view of the entirety for representing protection band sticker.
Fig. 2 is the top view of the entirety for representing protection band sticker.
Fig. 3 is the front view of the structure for representing rotary drive mechanism periphery.
Fig. 4 is the front view of the composition for representing chamber.
Fig. 5 is the longitudinal section of the composition for representing chamber.
Fig. 6 is the flow chart of the action for representing embodiment device.
Fig. 7 is the front view of the action for representing embodiment device.
Fig. 8 is the front view of the action for representing embodiment device.
Fig. 9 is the front view of the action for representing embodiment device.
Figure 10 is the top view of the action for representing embodiment device.
Figure 11 is the front view of the action for representing embodiment device.
Figure 12 is the top view of the action for representing embodiment device.
Figure 13 is the front view of the action for representing embodiment device.
Figure 14 is the enlarged front view for representing protection band to the sticking placement of wafer center part.
Figure 15 is the enlarged front view for representing protection band to the sticking placement of wafer center part.
Figure 16 is the enlarged front view for representing protection band to the sticking placement of wafer periphery.
Figure 17 is the enlarged front view for representing protection band to the sticking placement of wafer periphery.
Figure 18 is the front view of the cut-out action for representing protection band.
Figure 19 is the front view of the cut-out action for representing protection band.
Figure 20 is the front view of the action for representing embodiment device.
Figure 21 is the front view of the peeling action for representing unwanted band.
Figure 22 is the front view of the peeling action for representing unwanted band.
Figure 23 is the figure of the flowing of the gas for representing the within the chamber for flowing into past case.
Figure 24 is the longitudinal section of the wafer for being pasted with protection band by past case.
Description of reference numerals
4th, supply unit is carried；5th, application unit；6th, shut-off mechanism is carried；7th, chamber；8th, application unit；9th, stripping unit；10th, carry
Recoverer；20th, peeling member；22nd, Sticking roller；23rd, cutting unit；33A, upper shell；33B, 33C, lower casing；37th, holding station；
60th, control unit；PT, protection band；W, semiconductor crystal wafer.
Specific embodiment
Hereinafter, with reference to the accompanying drawings of one embodiment of the invention.Additionally, in the present embodiment, with semiconductor crystal wafer (with
The circuit with convex portions such as projections down referred to as " wafer ") enters in case of forming the protection band that face adhesive surface is protected
Row explanation.
Fig. 1 is related to one embodiment of the invention, is the integrally-built front view for representing protection band sticker, and Fig. 2 is
The top view of protection band sticker.
Protection band sticker has wafer supply/recoverer 1, wafer conveying mechanism 2, alignment tool 3, band supply unit 4, glues
Patch unit 5, band shut-off mechanism 6, chamber 7, application unit 8, stripping unit 9 and band recoverer 10 etc..Hereinafter, to above-mentioned each construction
The specific structure in portion and mechanism etc. is illustrated.
Two box C1, C2s are placed with side by side in wafer supply/recoverer 1.In each box C, multiple wafers W is formed with circuit
Face (surface) flat-hand position upwards is inserted and is in multilayer storage.
Wafer conveying mechanism 2 has two mechanical arms 11A, 11B.Two mechanical arm 11A, 11B are configured to flatly enter
Retire dynamic, also, overall can turn round and lift.Also, have on the top of mechanical arm 11A, 11B and inhale in horseshoe-shaped vacuum
The wafer maintaining part of attached formula.The insertion of wafer maintaining part is accommodated in the wafer W of box C gap each other in multilayer, and the absorption from the back side is protected
Hold wafer W.The wafer W that absorption remains is pulled out from box C, defeated to alignment tool 3, holding station 37 and wafer supply/recoverer 1 successively
Send.
Alignment tool 3 is configured to, and based on the breach of the periphery for being formed at the wafer W for being input into mounting by wafer conveying mechanism 2, determines
Bit plane is aligned to wafer W.
As shown in figure 1, band supply unit 4, application unit 5, barrier film recoverer 12 and cutting unit 23 are installed on same indulging
Plate 14.The stringer board 14 is moved horizontally along the framework 16 on top by movable table 15.
It is configured to, in band supply unit 4, protection band PT of the wider width of rolled fills in supply spool 17, from the confession
Protection band PT with barrier film s that releases to spool 17 is directed 18 groups of winding guiding of roller, will peel off the protection of barrier film s
Band PT is guided to application unit 5.In addition, being configured to, do not released by giving the rotational resistance of appropriateness to supply spool 17
The band of amount.
In barrier film recoverer 12, for batching the recovery spool 19 of the barrier film s under the stripping of protection band PT by edge
Take-up direction rotation driving.
As shown in figure 3, application unit 5 is with peeling member 20, dance roller 21 and Sticking roller 22.In addition, application unit 5
Equivalent to the 1st labelling machine in the present invention.
Peeling member 20 is the plate that top has sharp cutting edge.Using making cutting edge peeling member obliquely downward
Barrier film s is turned back and peels off protection band PT by 20.I.e., protection band PT is made to be projected from peeling member 20 forwards.
Dance roller 21 is cooperated with peeling member 20 and in time holds protection band PT.
Sticking roller 22 presses the top from the top protrusion of peeling member 20 of protection band PT and is pasted on protection band PT
The junction surface 70 of lower casing 33B, 33C described later.
Cutting unit 23 has：Movable table 25, its are moved along the framework 24 of the front side located at peeling member 20；Cutter
26, which is arranged at the bottom of the movable table 25 by tool holder.I.e., cutting unit 23 is along width tripping protection band
PT.
As depicted in figs. 1 and 2, band shut-off mechanism 6 is provided with knife unit 30 by supporting arm 29, and the supporting arm 29 is in phase
Top bottom for the arm of 28 cantilever support of movable table that can be lifted along framework 27 radially extends.In knife unit
Point of a knife cutter 31 directed downwardly is installed by tool holder on 30.Additionally, knife unit 30 can be adjusted by supporting arm 29
The radius of gyration.
Chamber 7 is made up of the shell paired up and down with the internal diameter less than the width of protection band T.In the present embodiment,
With 1 upper shell 33A and two lower casings 33B, 33C.
As shown in figure 4, the rotary shaft 35 of the rotary driving machine such as lower casing 33B, 33C and motor 34 links fixing, set respectively
It is placed in the two ends of revoliving arm 36.I.e., for example, it is configured to, when a lower casing 33B and upper shell 33A forms chamber 7, another
Lower casing 33C is located at the band paste position of 5 side of application unit.In addition, the upper and lower surface to lower casing 33B, 33C is implemented
The demouldings such as fluorine processing are processed.
The holding station 37 for lifting is provided with two lower casing 33B, 33C.Holding station 37 and insertion lower casing 33B,
The bar 38 of 33C links.The other end of bar 38 is linked with the actuator 39 including motor etc. and is driven.Thus, holding station 37 exists
Lifting in lower casing 33B, 33C.In addition, burying having heaters 49 in holding station 37.
Upper shell 33A is arranged at lift drive mechanism 40.The lift drive mechanism 40 has：Can be configured at along longitudinal direction
The movable table 43 that the track 42 at the back of longitudinal wall 41 is lifted；The movable of the movable table 43 is supported in the way of it can adjust height
Frame 44；And arm 45, which extends from the movable frame 44 towards front.In the support shaft for extending from the top ends of the arm 45 downwards
46 are provided with shell 33A.
47 rotating of lead screw shaft is made by using motor 48, movable table 43 is coiled into lifting.
As shown in figure 5, upper lower casing 33A-33C is connected with vacuum plant 51 by stream 50.In vacuum plant 51
Magnetic valve 52 is provided with the stream 50 of side.The stream 50 is being provided with electricity towards on the downstream upwards stream of shell 33A branch
Magnet valve 53, also, magnetic valve 54 is provided with the stream to lower casing 33B branch.And, stream 50 is with leak valve 55.
Additionally, the work of the opening and closing operations and vacuum plant 51 of magnetic valve 52,53,54 and leak valve 55 is implemented by control unit 60.This
Outward, vacuum meter 56 is provided with upper shell 33A and lower casing 33B.The testing result of vacuum meter 56 is sent to control unit 60.
Application unit 8 is provided with pressing member 61 in upper shell 33A.Pressing member 61 is include elastomer substantially half
Spherical shape.The top of the pressing member is linked with cylinder 62, is lifted in upper shell 33A.Additionally, application unit 8 is equivalent to this
The 2nd bright labelling machine.
As shown in Figure 1, Figure 2 with shown in Figure 21, stripping unit 9 has along the mobile movable table in 64 left and right horizontal of guide rail ground
65th, the fixed bearing piece 66 for lifting in the movable table 65 and the movable plate 68 being opened and closed by the fixed bearing piece 66 and cylinder 67.
I.e., stripping unit 9 by protection band PT by cutting out the unwanted side after the shape of wafer W by solid with shut-off mechanism 6
Determine supporting slice 66 and movable plate 68 holds and gradually peels off.
Returnable 69 is configured with band recoverer 10, and the returnable 69 is located at the stripping of stripping unit 9 and terminates end
Side, protection band PT to being stripped down by the stripping unit 9 are reclaimed.
Then flow chart, according to Fig. 6 and Fig. 7～Figure 20 are to being glued protection band PT using the above embodiments device
The a series of actions for being affixed on wafer W is illustrated.
First, wafer W is exported from box C1 using mechanical arm 11A, and is placed in alignment tool 3.Carried out using alignment tool 3
After contraposition, wafer W is conveyed (step S1) to positioned at the holding station 37 with paste position using mechanical arm 11A.
As shown in fig. 7, holding station 37 make the prominent top 70 (junction surface) that must be than lower casing 33B of many fulcrum posts 71 high and
Receive wafer W.The fulcrum post 71 for receiving wafer W declines, and wafer W is kept the holding face absorption of platform 37 and keeps.Now, brilliant
The surface of circle W is located at the position (step S2) lower than junction surface 70.
As shown in figure 8, making application unit 5 move to starting end is pasted.While making the supply of protection band PT and batching synchronization
While making protection band PT project predetermined length from peeling member 20.Sticking roller 22 is made to decline and be pasted on the top of protection band PT
The junction surface 70 (step S3) of lower casing 33B.Afterwards, application unit 5 is made to move protection band PT at the junction surface
70 entire surface is gradually pasted.Now, the surface of wafer W and the adhesive surface of protection band PT are to have the gap for having predetermined
Mode is close to and relative.In addition, 1st adhering processes of the step 3 equivalent to the present invention.
Stop application unit 5 in the position for having exceeded preset distance away from the junction surface 70 for pasting end side.Cutting unit
23 work, as shown in Figure 9 and Figure 10, cutter 26 is along rear end side of the width tripping protection with PT (step S4).I.e., protect
Band PT is cut into individual.Additionally, Fig. 8, Fig. 9 and Figure 15 described later record the lower casing 33B rotation 90 for making to be recorded in left side
Degree, in order to it is readily apparent to the band sticking placement of application unit 5.
As is illustrated by figs. 11 and 12, so that rotary driving machine 34 is worked and so that lower casing 33B is turned round in the lower section of upper shell 33A
Mobile.Now, the lower casing 33C for being installed on the another side of revoliving arm 36 is moved to band paste position.
As shown in figure 13, decline shell 33A, protection band PT is clipped with lower casing 33B and form 7 (step of chamber
S5).
Stop-and-waste valve 55, while open magnetic valve 52-54 and so that vacuum plant 51 is worked, to upper shell 33A and lower outer
This two space of shell 33B proceeds by decompression (step S6).Now, the aperture to magnetic valve 53,54 is adjusted, so that two shells
The space of 33A, 33B is reduced pressure with same speed.
Here, before the space of two shell 33A, 33B is depressurized to the predetermined air pressure of identical (such as vacuum state),
The air pressure (step S7) in two spaces is detected using vacuum meter 56 successively.60 pairs of testing results from vacuum meter 56 of control unit and pre-
The a reference value of the prerequisite air pressure that sets is compared.Thus, when measured value reaches a reference value, control unit 60 makes magnetic valve 52-
54 make the work of vacuum plant 51 stop (step S8) while closing.
Control unit 60 makes application unit 8 work.I.e., as shown in figure 14, control unit 60 declines pressing member 61 and from top
Gradually pressing protection band PT is held.Now, protection band PT is recessed curved along the surface of the pressing member 61 of semi-spherical shape
Bent on one side from the length (step S9) that the radial stickup in the centrally directed periphery of wafer W is predetermined.If protection band PT is to wafer W's
The gluing treatment of middle body is completed, then pressing member 61 returns to the position of readiness of top.Additionally, step S9 is equivalent to this
The 2nd bright adhering processes.
Afterwards, adjust the aperture of leak valve 55 and the air pressure in the space of upper shell 33A is brought up to predetermined air pressure.This
When, as shown in figure 15, elastic deformation becomes concavely curved shape to protection band PT, therefore, if making the gas in the space of lower casing 33B
In pressure ratio the air pressure in the space of shell 33A low and produce pressure differential, then as shown in Figure 16 and Figure 17, protection band PT is from wafer W's
Core is gradually drawn in lower casing 33B towards periphery, and radial being gradually pasted on is close to the wafer W (step being equipped with
S10).
In the operation that protection band PT is gradually pasted on wafer W, the measured value of vacuum meter 56 is conveyed to control unit 60.
If the measured value of the air pressure in the space of upper shell 33A reaches the desired value (step S11) of pre-set air pressure, control unit
60 are pressurizeed to protection band PT until through the scheduled time (step S12) in the state of it will leak out the closing of valve 55.Additionally, step
Rapid S10～step S11 is equivalent to the 3rd adhering processes of the present invention.
Control unit 60 is opened magnetic valve 53,54 after a predetermined time elapses and makes the air pressure in shell 33A and lower casing
Air pressure in 33B is identical (step S13).Now, also monitored in air pressure and lower casing 33B in upper shell 33A by vacuum meter 56
Air pressure.
If the air pressure in upper shell 33A is identical with the air pressure in lower casing 33B, control unit 60 is to leak valve 55
Aperture is adjusted while making two spaces return to atmospheric pressure.Afterwards, shell 33A is made to increase and atmosphere opening (step S14).
Additionally, in a period of protection band PT being pasted on wafer W in chamber 7, using mechanical arm 11B by wafer W from
Box C2 is exported.After wafer W is adsorbed holding by the holding station 37 in lower casing 33C, as shown in figure 18, protection band PT is pasted on this
The junction surface 70 of lower casing 33C.
If from protection band PT in the chamber 7 that formed of lower casing 33A, 33B to the gluing treatment of wafer W and by pasting
Protection band PT that unit 5 is carried out is completed to the gluing treatment of lower casing 33C, then as shown in figure 19, invert revoliving arm 36.I.e.,
So that a lower casing 33B is moved to the band paste position of 5 side of application unit, make the lower section of another lower casing 33C shell 33A upwards
Bonding station movement.
So that band shut-off mechanism 6 is worked, as shown in figure 20, make knife unit 30 drop to predetermined altitude, cutter 31 is pierced into
Protection band PT between wafer W and lower casing 33B.In this condition, the periphery tripping protection along wafer W carries PT (step
S15).Now, the surface of protection band PT is held horizontally.If the cut-out of protection band PT is completed, knife unit 30 rises and returns
Return to position of readiness.
Stripping unit 9 is made to move to starting position is peeled off.As shown in figure 21, clamped by fixed bearing piece 66 and movable plate 68
Two sides beyond lower casing 33B of protection band PT.As shown in figure 22, in this condition, pre- spacing is being moved obliquely upward
From afterwards, move horizontally and unwanted protection band PT cut after lower wafer shape is gradually peeled off (step S14).
If stripping unit 9 reaches band recoverer 10, de-preservation makes protection band PT to returnable with the holding of PT
69 fall.
The wafer W for being pasted with protection band PT is made to be accommodated in the original position of box C1 using mechanical arm 11A.
Additionally, in a period of the cut-out of protection band PT of lower casing 33B side and lift-off processing is carried out, carrying out protection band PT
Gluing treatment from the wafer to lower casing 33C side.By above step, a series of sticking placements to wafer W of protection band T
Terminate, after, identical process is repeated.
According to above-described embodiment device, protection band PT is made to glue in advance using pressing member 61 in the chamber 7 of vacuum state
It is affixed on the middle body of wafer W and makes its elastic deformation become concavely curved shape, therefore, if leaks shell 33A side afterwards
And improving air pressure, then protection band PT is partially toward from central authorities that periphery is radial gradually to be drawn in lower casing 33B side.Thus, energy
The bonding interface for enough preventing bubble to be involved between wafer W and protection band PT.
Additionally, the present invention also can be implemented with following such form.
(1) in above-mentioned implementation, pressing member 61 is not limited to semi-spherical shape, as long as half can be pasted in advance
The component of the predetermined length (diameter) of the middle body of semiconductor wafer.For example, it is also possible to be the plate less than the diameter of wafer W
And cylinder.
(2) in above-mentioned implementation, it is also possible to which heater is embedded in pressing member 61, protection band PT is heated
Become predetermined temperature while being pasted.
According to the structure, protection band PT can be made in concavely curved shape with the short time.
Claims (4)
1. the circuit that protection band is pasted on semiconductor crystal wafer is formed face by a kind of protection band method of attaching, its, it is characterised in that
The protection band method of attaching includes：
1st adhering processes, in the 1st adhering processes, in the 1st shell and this paired shell of the 2nd shell for constituting chamber
One of junction surface paste the protection band bigger than the internal diameter of the chamber；
Decompression operation, in the decompression operation, is clipping the protection band by the junction surface of the 1st shell and the 2nd shell
Under state, semiconductor crystal wafer and the adhesive surface of the protection band is made to be close to and opposite edge formation chamber, to being divided by protection band
The two spaces being divided into are reduced pressure；
2nd adhering processes, in the 2nd adhering processes, press the middle body of the protection band using pressing member and by institute
The middle body for stating protection band is pasted on the middle body of semiconductor crystal wafer；
Operation is released, in the releasing operation, releases pressing of the pressing member to protection band；
3rd adhering processes, in the 3rd adhering processes, make storage keep the space of the 2nd shell of the semiconductor crystal wafer
Air pressure protection band is radial towards periphery from the central side of semiconductor crystal wafer than the air pressure in the space of the 1st shell low one side
Paste.
2. protection band method of attaching according to claim 1, it is characterised in that
In the 2nd adhering processes, the pressing member elastic deformation of the elastomer for making to include semi-spherical shape is by guarantor
Protecting band is pasted on semiconductor crystal wafer.
3. the circuit that protection band is pasted on semiconductor crystal wafer is formed face by a kind of protection band sticker, its, it is characterised in that
The protection band sticker includes：
Holding station, its keep the semiconductor crystal wafer；
Chamber, its are made up of the paired shell for receiving the holding station；
Band supply unit, its supply protection band bigger than the internal diameter of the shell；
Protection band is pasted on the junction surface of one of the shell for 1st labelling machine, its；
2nd labelling machine, which is in the within the chamber using pressing member pressing protection band and the semiconductor for being placed in holding station
Wafer be close to and relative middle body and protection band is pasted on the middle body of the semiconductor crystal wafer；
3rd labelling machine, which makes the two spaces generation pressure differential of the within the chamber being separated into by the protection band and direction is partly led
The radial stickup protection band in the periphery of body wafer；
Shut-off mechanism, which is along the profile tripping protection band of the semiconductor crystal wafer；
Remaining for the shape of the semiconductor crystal wafer under the cutting of protection band is partially stripped by mechanism for stripping, its；
Band recoverer, which is reclaimed to the protection band after stripping.
4. protection band sticker according to claim 3, it is characterised in that
The pressing member that 2nd labelling machine has is the semi-spherical shape for including elastomer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015172098A JP2017050388A (en) | 2015-09-01 | 2015-09-01 | Protective tape sticking method and protective tape sticking device |
| JP2015-172098 | 2015-09-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106486395A true CN106486395A (en) | 2017-03-08 |
Family
ID=58273740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610675658.1A Pending CN106486395A (en) | 2015-09-01 | 2016-08-16 | Protection band method of attaching and protection band sticker |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2017050388A (en) |
| KR (1) | KR20170027289A (en) |
| CN (1) | CN106486395A (en) |
| TW (1) | TW201714236A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110217641A (en) * | 2019-04-30 | 2019-09-10 | 中国航发南方工业有限公司 | Engine blade disk side flank method of attaching |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7285133B2 (en) * | 2019-05-17 | 2023-06-01 | 日東電工株式会社 | Sheet material pasting method and sheet material pasting device |
| JP2021129038A (en) | 2020-02-14 | 2021-09-02 | 株式会社ディスコ | Tape sticking device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5797623B2 (en) | 2012-08-31 | 2015-10-21 | 日東精機株式会社 | Adhesive tape application method and adhesive tape application device |
-
2015
- 2015-09-01 JP JP2015172098A patent/JP2017050388A/en active Pending
-
2016
- 2016-08-16 CN CN201610675658.1A patent/CN106486395A/en active Pending
- 2016-08-24 TW TW105126980A patent/TW201714236A/en unknown
- 2016-08-29 KR KR1020160109908A patent/KR20170027289A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110217641A (en) * | 2019-04-30 | 2019-09-10 | 中国航发南方工业有限公司 | Engine blade disk side flank method of attaching |
| CN110217641B (en) * | 2019-04-30 | 2020-09-11 | 中国航发南方工业有限公司 | Engine blade disc side tooth side surface pasting method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201714236A (en) | 2017-04-16 |
| KR20170027289A (en) | 2017-03-09 |
| JP2017050388A (en) | 2017-03-09 |
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