CN106466747A - Discharge processing power source - Google Patents
Discharge processing power source Download PDFInfo
- Publication number
- CN106466747A CN106466747A CN201611141486.6A CN201611141486A CN106466747A CN 106466747 A CN106466747 A CN 106466747A CN 201611141486 A CN201611141486 A CN 201611141486A CN 106466747 A CN106466747 A CN 106466747A
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- Prior art keywords
- mos
- switch pipe
- resistance
- module
- power source
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H1/00—Electrical discharge machining, i.e. removing metal with a series of rapidly recurring electrical discharges between an electrode and a workpiece in the presence of a fluid dielectric
- B23H1/02—Electric circuits specially adapted therefor, e.g. power supply, control, preventing short circuits or other abnormal discharges
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Generation Of Surge Voltage And Current (AREA)
Abstract
The present invention discloses a kind of discharge processing power source, flows through electric current to process workpiece for the gap between the conductive electrode and workpiece to be processed of electric discharge device, and it includes the switching tube testing circuit of the state for detecting MOS switch pipe or MOS module；The negative pole of its power supply is connected with the drain electrode of detected MOS switch pipe or MOS module, the positive pole of power supply is connected with one end of first resistor, the other end of first resistor is connected with one end of second resistance and one end of 3rd resistor respectively, the other end of the other end of second resistance and 3rd resistor is respectively connected to the input of optocoupler, the other end of second resistance is also connected with the positive pole of the first diode, the negative pole of the first diode is connected with the source electrode of detected MOS switch pipe or MOS module, and stabilivolt is in parallel with second resistance.The present invention being capable of quick detection MOS state, raising systematic function and reliability, the use of minimizing logic circuit and logic interfacing resource and many detector units.
Description
Technical field
The invention belongs to electronic technology field, more particularly, to a kind of discharge processing power source.
Background technology
From DC source by electric power be added between the conductive electrode of electric discharge device and the workpiece of electric conductivity formed micro-
When on small-gap suture, the resistance of the dielectric liquid between gap will reduce, and discharge, thus " ON time " starts.?
During controlled ON time, discharge current is flowed by gap so that workpiece material vaporizes or melts.In conducting
Between at the end of, in order to recover the insulation characterisitic of dielectric liquid, control " deadline " during, stop apply electric power.Logical
Often, in order to repeatedly from DC source to the power pulse of gap supply high frequency, the on-off circuit setting that is made up of multiple switch pipe
Between DC source and gap.The switch motion of the on/off of switching tube, is sent through logic gates and driving by controller
Circuit is applied to switch controlled pole and carries out break-make control.It is known that bigger processing electric current can improve adding of spark machine
Work speed.At present, in spark machined, in 200A, this requires that the on-off circuit of the processing machine of electric spark is usual to peak point current
Comprise tens switching tubes.Within " non-conduction time ", due to multiple switch pipe body effect of parasitic capacitance in parallel, switch tube
The detection time by " being conducting to cut-off " cause larger delay, usual system can avoid this delay time, this is just
System process velocity and reliability are adversely affected.
Content of the invention
The technical problem to be solved in the present invention is to overcome in prior art because multiple switch pipe body in parallel is parasitic
Capacitive effect, also the detection time of switch tube causes larger delay simultaneously, and system process velocity and reliability are caused
The defect of negative effect, provides a kind of discharge processing power source.
The present invention is to solve above-mentioned technical problem by the following technical programs：
A kind of discharge processing power source, for the gap between the conductive electrode and workpiece to be processed of electric discharge device
Flow through electric current, to process described workpiece, described discharge processing power source includes MOS (metal-oxide semiconductor (MOS)) switching tube or MOS
Module, also includes the switching tube testing circuit of the state for detecting MOS switch pipe or MOS module；
Described switching tube testing circuit includes：Power supply, first resistor, second resistance, 3rd resistor, optocoupler, the one or two pole
Pipe and stabilivolt；
The negative pole of described power supply is connected with the drain electrode of detected MOS switch pipe or MOS module, the positive pole of described power supply and
One end of described first resistor connects, other end one end and the described 3rd with described second resistance respectively of described first resistor
One end of resistance connects, and the other end of the other end of described second resistance and described 3rd resistor is respectively connected to the defeated of described optocoupler
Enter end, the other end of described second resistance is also connected with the positive pole of described first diode, the negative pole of described first diode and
The source electrode of detected MOS switch pipe or MOS module connects, and described stabilivolt is in parallel with described second resistance.
It is preferred that described switching tube testing circuit also includes amplifier；
The input of described amplifier is connected with the outfan of described optocoupler, the outfan output output letter of described amplifier
Number.
It is preferred that the negative pole of described stabilivolt is connected with one end of described second resistance, the positive pole of described stabilivolt and institute
The other end stating second resistance connects.
It is preferred that described power supply is 12V power supply.
It is preferred that described discharge processing power source also includes：DC source, current-limiting resistance, the second diode, pulse generator
With discharge examination unit；
The negative pole of described DC source is connected with described workpiece, the positive pole of described DC source pass through described current-limiting resistance,
Described second diode is connected with described conductive electrode with described MOS switch pipe or MOS module；
The input of described discharge examination unit is connected with described conductive electrode and described workpiece respectively, described discharge examination
The outfan of unit is connected with described pulse generator；
Described pulse generator provides door pulse signal to described MOS switch pipe or MOS module, in specified ON time
Interior, the voltage of described DC source is added to described conductive electrode and described work by described current-limiting resistance and described second diode
On gap between part.
It is preferred that the grid of described MOS switch pipe or MOS module is connected with the outfan of described pulse generator, in order to
Receive the door pulse signal that described pulse generator provides；
The source electrode of described MOS switch pipe or MOS module is connected with the source electrode of described second diode, described MOS switch pipe
Or the drain electrode of MOS module is connected with described conductive electrode.
It is preferred that described discharge processing power source also includes：For setting the NC device of processing conditionss；
The input of described NC device is connected with the outfan of described switching tube testing circuit, in order to receive described switching tube
The output signal of testing circuit output；
The outfan of described NC device is connected with the input of described pulse generator, in order to according to described processing conditionss control
Make the door pulse signal that described pulse generator provides to described MOS switch pipe or MOS module.
It is preferred that described NC (digital control, abbreviation numerical control) device includes display module and input module.
It is preferred that described input module includes keyboard and touch control unit.
On the basis of meeting common sense in the field, above-mentioned each optimum condition, can combination in any, obtain final product each preferable reality of the present invention
Example.
The positive effect of the present invention is：The present invention can quickly detect MOS state, can improve systematic function and
Reliability, and the present invention, on the premise of ensureing MOS quick detection, also reduces use and the logic interfacing money of logic circuit
Source and many detector units.
Brief description
Fig. 1 is the schematic diagram of the discharge processing power source of the embodiment of the present invention.
Fig. 2 is the switching tube detection action time figure in electric machining.
Fig. 3 is the circuit diagram of the switching tube testing circuit of the embodiment of the present invention.
Specific embodiment
Further illustrate the present invention below by the mode of embodiment, but therefore do not limit the present invention to described reality
Apply among a scope.
Embodiment
A kind of discharge processing power source, for the gap between the conductive electrode and workpiece to be processed of electric discharge device
Flow through electric current, to process described workpiece.As shown in figure 1, described discharge processing power source includes MOS switch pipe or MOS module, also wrap
Include the switching tube testing circuit 1 of state for detecting MOS switch pipe or MOS module, DC source 3, current-limiting resistance R0, second
Diode D2, pulse generator 4, discharge examination unit 5 and NC device 6.Wherein, described DC source 3 is adjustable, from 90V to
280V.
The negative pole of described DC source 3 is connected with workpiece N, the positive pole of described DC source 3 pass through described current-limiting resistance R0,
Described second diode D2 and described MOS switch pipe or MOS module are with conductive electrode S-phase even；Described discharge examination unit 5 defeated
Enter end to be connected with described conductive electrode and described workpiece respectively, the outfan of described discharge examination unit 5 and described pulse generation
Device connects；Described pulse generator 4 provides door pulse signal to described MOS switch pipe or MOS module, in specified ON time
Interior, the voltage of described DC source 3 by described current-limiting resistance R0 and described second diode D2 be added to described conductive electrode and
On gap between described workpiece.In the case, electric current G begins through gap flowing, on the contrary then no current flows between gap,
So ensure workpiece is processed.
Described NC device 6 is used for setting processing conditionss.The input of described NC device 6 and described switching tube testing circuit 1
Outfan connect, in order to receive the output signal of described switching tube testing circuit 1 output；The outfan of described NC device 6 with
The input of described pulse generator connects, in order to control described pulse generator to open to described MOS according to described processing conditionss
Close the door pulse signal that pipe or MOS module provide.Described NC device 6 includes display module and input module.Wherein, described input
Module can include keyboard and touch control unit.
In the present embodiment, the grid of described MOS switch pipe or MOS module is connected with the outfan of described pulse generator 4,
In order to receive the door pulse signal that described pulse generator 4 provides；The source electrode of described MOS switch pipe or MOS module and described the
The source electrode of two diode D2 connects, and the drain electrode of described MOS switch pipe or MOS module is connected with described conductive electrode.
In order to ensure there are enough processing electric currents, the MOS switch pipe as switching device or the generally employing of MOS module are several enough
MOSFET (Metal-Oxide Semiconductor field-effect transistor) element of amount.These MOSFET respond Gate signal simultaneously, simultaneously
Connection and disconnection.But, whether workpiece and gap are discharged and are subject to gap clearance size, wait other external factor.Namely
Say although wishing, within the Gate signal conduction time, have electric current to pass through in gap, but be likely to no current in ON time
Flow through.The now body effect of parasitic capacitance of paralleling MOS FET, has very big delay to detection.MOSFET parallel connection more time delay is more
Long.As shown in Fig. 2 for avoiding such delay it is necessary to extend the non-conduction time, so reducing to high frequency electric source frequency, directly
Just have impact on process velocity etc..Once breaking down, NC device 6 is recorded into internal memory and shows on LCD screen, pulse generation
Device is processed.
Below the present embodiment breaker in middle pipe testing circuit 1 is described in detail：
Switching tube testing circuit 1, for detecting the state of MOS switch pipe or MOS module, as shown in figure 3, described switching tube
Testing circuit 1 includes：Power supply 100, first resistor R1, second resistance R2,3rd resistor R3, optocoupler 101, the first diode D1,
Stabilivolt Dz and amplifier 102.
The negative pole of described power supply 100 is connected with the drain electrode of detected MOS switch pipe or MOS module (shown in Fig. 3 is
MOS module, if detected is MOS switch pipe, then the connected mode of MOS switch pipe is identical with the connected mode of MOS module,
Therefore repeat no more), the positive pole of described power supply 100 is connected with one end of described first resistor R1, described first resistor R1 another
End is connected with one end of described second resistance R2 and one end of described 3rd resistor R3 respectively, the other end of described second resistance R2
Be respectively connected to the input of described optocoupler 101 with the other end of described 3rd resistor R3, wherein said 3rd resistor R3 another
Terminate 1 foot of the input into described optocoupler 101, the other end of described second resistance R2 accesses the input of described optocoupler 101
2 feet.The other end of described second resistance R2 is also connected with the positive pole of described first diode D1, described first diode D1's
Negative pole is connected with the source electrode of detected MOS switch pipe or MOS module, and described stabilivolt Dz is in parallel with described second resistance R2.
Specifically, the negative pole of described stabilivolt Dz is connected with one end of described second resistance R2, the positive pole of described stabilivolt Dz with described
The other end of second resistance R2 connects.The input of described amplifier 102 is connected with the outfan of described optocoupler 101, described puts
The outfan output signal output of big device 102.Wherein, described power supply 100 is 12V power supply, and described optocoupler 101 can select 40M
Bandwidth optocoupler.Described output signal is the signal being used for the state characterizing MOS switch pipe or MOS module.Described output signal
Exported to NC device 6 by described switching tube testing circuit 1.
Although the foregoing describing the specific embodiment of the present invention, it will be appreciated by those of skill in the art that these
It is merely illustrative of, protection scope of the present invention is defined by the appended claims.Those skilled in the art is not carrying on the back
On the premise of the principle and essence of the present invention, various changes or modifications can be made to these embodiments, but these changes
Each fall within protection scope of the present invention with modification.
Claims (9)
1. a kind of discharge processing power source, for clearance flow between the conductive electrode and workpiece to be processed of electric discharge device
Overcurrent, to process described workpiece it is characterised in that described discharge processing power source includes MOS switch pipe or MOS module, also wraps
Include the switching tube testing circuit of the state for detecting MOS switch pipe or MOS module；
Described switching tube testing circuit includes：Power supply, first resistor, second resistance, 3rd resistor, optocoupler, the first diode and
Stabilivolt；
The negative pole of described power supply is connected with the drain electrode of detected MOS switch pipe or MOS module, the positive pole of described power supply with described
One end of first resistor connects, other end one end and the described 3rd resistor with described second resistance respectively of described first resistor
One end connect, the other end of the other end of described second resistance and described 3rd resistor is respectively connected to the input of described optocoupler
End, the other end of described second resistance is also connected with the positive pole of described first diode, the negative pole of described first diode and quilt
The source electrode of the MOS switch pipe of detection or MOS module connects, and described stabilivolt is in parallel with described second resistance.
2. discharge processing power source as claimed in claim 1 is it is characterised in that described switching tube testing circuit also includes amplifying
Device；
The input of described amplifier is connected with the outfan of described optocoupler, the outfan output signal output of described amplifier.
3. discharge processing power source as claimed in claim 1 is it is characterised in that the negative pole of described stabilivolt and described second resistance
One end connect, the positive pole of described stabilivolt is connected with the other end of described second resistance.
4. discharge processing power source as claimed in claim 1 is it is characterised in that described power supply is 12V power supply.
5. discharge processing power source as claimed in claim 1 is it is characterised in that described discharge processing power source also includes：Unidirectional current
Source, current-limiting resistance, the second diode, pulse generator and discharge examination unit；
The negative pole of described DC source is connected with described workpiece, and the positive pole of described DC source passes through described current-limiting resistance, described
Second diode is connected with described conductive electrode with described MOS switch pipe or MOS module；
The input of described discharge examination unit is connected with described conductive electrode and described workpiece respectively, described discharge examination unit
Outfan be connected with described pulse generator；
Described pulse generator provides door pulse signal to described MOS switch pipe or MOS module, in specified ON time,
The voltage of described DC source is added to described conductive electrode and described workpiece by described current-limiting resistance and described second diode
Between gap on.
6. discharge processing power source as claimed in claim 5 it is characterised in that the grid of described MOS switch pipe or MOS module with
The outfan of described pulse generator connects, in order to receive the door pulse signal that described pulse generator provides；
The source electrode of described MOS switch pipe or MOS module is connected with the source electrode of described second diode, described MOS switch pipe or MOS
The drain electrode of module is connected with described conductive electrode.
7. discharge processing power source as claimed in claim 5 is it is characterised in that described discharge processing power source also includes：For setting
Determine the NC device of processing conditionss；
The input of described NC device is connected with the outfan of described switching tube testing circuit, in order to receive described switching tube detection
The output signal of circuit output；
The outfan of described NC device is connected with the input of described pulse generator, in order to control institute according to described processing conditionss
State the door pulse signal that pulse generator provides to described MOS switch pipe or MOS module.
8. discharge processing power source as claimed in claim 7 is it is characterised in that described NC device includes display module and input mould
Block.
9. discharge processing power source as claimed in claim 8 is it is characterised in that described input module includes keyboard and touch-control list
Unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611141486.6A CN106466747B (en) | 2016-12-12 | 2016-12-12 | Discharge processing power source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611141486.6A CN106466747B (en) | 2016-12-12 | 2016-12-12 | Discharge processing power source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106466747A true CN106466747A (en) | 2017-03-01 |
| CN106466747B CN106466747B (en) | 2018-08-31 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611141486.6A Active CN106466747B (en) | 2016-12-12 | 2016-12-12 | Discharge processing power source |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106735636A (en) * | 2017-03-31 | 2017-05-31 | 山东豪迈机械科技股份有限公司 | Electrical discharge machining discharging headlamp circuit and method |
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| CN1112470A (en) * | 1993-12-24 | 1995-11-29 | 沙迪克株式会社 | Electric discharge machining apparatus |
| JP2953862B2 (en) * | 1991-03-12 | 1999-09-27 | アギー エスアー | Pulse generator and pulse generation method for electric discharge machine |
| CN2353475Y (en) * | 1998-11-26 | 1999-12-15 | 山东工业大学 | Impulse power-supply for spark processing |
| CN202824897U (en) * | 2012-09-26 | 2013-03-27 | 苏州三特科技有限公司 | Improved electrical process machine pulsed power supply |
| CN205129102U (en) * | 2015-10-26 | 2016-04-06 | 苏州新火花激光科技有限公司 | Spark -erosion machining is discharge gap control circuit for equipment |
| CN206277002U (en) * | 2016-12-12 | 2017-06-27 | 上海东熠数控科技有限公司 | Discharge processing power source |
-
2016
- 2016-12-12 CN CN201611141486.6A patent/CN106466747B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2953862B2 (en) * | 1991-03-12 | 1999-09-27 | アギー エスアー | Pulse generator and pulse generation method for electric discharge machine |
| CN1112470A (en) * | 1993-12-24 | 1995-11-29 | 沙迪克株式会社 | Electric discharge machining apparatus |
| CN2353475Y (en) * | 1998-11-26 | 1999-12-15 | 山东工业大学 | Impulse power-supply for spark processing |
| CN202824897U (en) * | 2012-09-26 | 2013-03-27 | 苏州三特科技有限公司 | Improved electrical process machine pulsed power supply |
| CN205129102U (en) * | 2015-10-26 | 2016-04-06 | 苏州新火花激光科技有限公司 | Spark -erosion machining is discharge gap control circuit for equipment |
| CN206277002U (en) * | 2016-12-12 | 2017-06-27 | 上海东熠数控科技有限公司 | Discharge processing power source |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106735636A (en) * | 2017-03-31 | 2017-05-31 | 山东豪迈机械科技股份有限公司 | Electrical discharge machining discharging headlamp circuit and method |
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| Publication number | Publication date |
|---|---|
| CN106466747B (en) | 2018-08-31 |
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