CN106462308A - Capacitive sensing device and electronic equipment - Google Patents
Capacitive sensing device and electronic equipment Download PDFInfo
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- CN106462308A CN106462308A CN201680000683.8A CN201680000683A CN106462308A CN 106462308 A CN106462308 A CN 106462308A CN 201680000683 A CN201680000683 A CN 201680000683A CN 106462308 A CN106462308 A CN 106462308A
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The present invention provides a capacitive sensing device and an electronic device. The capacitive sensing device includes a plurality of sensing units and a driving circuit. Each sensing unit comprising: a sensing electrode; a first control switch connected to the sensing electrode; and a second control switch connected to the sensing electrode. And the driving circuit is connected with the first control switch and the second control switch of the plurality of sensing units respectively for controlling the conduction of the first control switch and the second control switch in the same sensing unit, The first control switch transmits an excitation signal to the sensing electrode to perform a sensing operation and transmits a first reference signal to the sensing electrode through the turned on second control switch.
Description
Technical field
The present invention relates to field of sensing technologies, more particularly, to a kind of capacitance-type sensing device and there is described condenser type pass
The electronic equipment of induction device.
Background technology
With social development, increasing electronic equipment is (such as：Mobile phone, panel computer, Wearable, Yi Jizhi
The various intelligent artifacts such as energy household) typically one or more sensing device all can be set.Described sensing device includes sensing such as and uses
The touch sensing device of family touch operation, bio information sensing device of sensing biological information of human body etc..At present, touch sensing
Device, bio information sensing device etc. are many to execute sensing operation using capacitance-type sensing device.
Taking bio information sensing device as a example, generally, described bio information sensing device include multiple in array arrangement
Sensing electrode and the drive circuit being connected with each sensing electrode.Described drive circuit typically drives sensing electrode to hold line by line
Row bio information senses.
So, when described drive circuit each drive part sensing electrode execution bio information sensing, remaining sensing electrode
On voltage because of situations such as signal interference etc. impact can exist inconsistent, therefore to execution bio information sensing sensing electricity
The parasitic effects of pole are different and be all unknown, and bio information sensing device is of a relatively high to sensing required precision, thus not
Accurate detection beneficial to bio information.
Content of the invention
It is contemplated that at least solving one of technical problem present in prior art.For this reason, the present invention needs to provide one
Plant capacitance-type sensing device and electronic equipment.
The present invention provides a kind of capacitance-type sensing device, including：
Multiple sensing units, each sensing unit includes：
Sensing electrode；
First controlling switch, is connected with described sensing electrode；With
Second controlling switch, is connected with described sensing electrode；With
Drive circuit, is connected respectively with the first controlling switch of the plurality of sensing unit and the second controlling switch, is used for
Control the first controlling switch and the second controlling switch timesharing conducting in same sensing unit, and the first controlling switch by conducting
Transmission pumping signal executes sensing operation to sensing electrode, transmits one first reference signal by the second controlling switch of conducting and gives
Sensing electrode.
Alternatively, described first reference signal is identical with described pumping signal.
Alternatively, for same row sensing electrode：
Drive the first controlling switch conducting in wherein one sensing unit, the second controlling switch to end when described drive circuit
When, drive the first controlling switch cut-off of the part or all of sensing unit in remaining sensing unit, the second controlling switch to turn on.
Alternatively, described drive circuit provides described pumping signal to hold to sensing electrode by the first controlling switch of conducting
Row bio information senses, and receives the sensing signal from sensing electrode output, to execute the sensing operation of self-capacitance.
Alternatively, described drive circuit includes scan drive circuit, sensing drive circuit and reference signal generation circuit,
Wherein, described scan drive circuit is used for driving conducting and the cut-off of described first controlling switch and described second controlling switch,
The described drive circuit that senses is used for driving sensing electrode to execute sensing operation, described reference letter by the first controlling switch of conducting
Number produce circuit be used for by conducting second controlling switch provide described second reference signal to sensing electrode.
Alternatively, when described scan drive circuit drives the first controlling switch conducting, second control of a line sensing unit
During switch cut-off, the first controlling switch that described sensing drive circuit passes through conducting provides described pumping signal to feel to part simultaneously
Survey electrode execution sensing operation, the first controlling switch that described reference signal generation circuit passes through conducting further provides same the
Two reference signals give the sensing electrode of the part or all of sensing unit in remaining sensing unit.
Alternatively, described second reference signal is identical with described first reference signal.
Alternatively, for the sensing electrode of same a line：Described drive circuit simultaneously drives section senses electrode to execute every time
Sensing operation, is driven by multiple, until having driven a line sensing electrode execution sensing operation.
Alternatively, described drive circuit further includes multiple data selectors, and the plurality of data selector connects institute
State reference signal generation circuit and described sensing drive circuit, each data selector passes through the first controlling switch further and connects
The sensing electrode of part sensing unit, described data selector is used for selecting to export described pumping signal or described second with reference to letter
Number give sensing electrode.
Alternatively, described drive circuit once exports described pumping signal respectively to a sense by each data selector simultaneously
Survey electrode execution sensing operation, and described second reference signal is exported respectively to remaining sense with a line by each data selector
Survey the part or all of sensing electrode in electrode.
Alternatively, described capacitance-type sensing device further includes control unit, and described control unit is driven with described scanning
Galvanic electricity road and the plurality of data selector connect respectively, for controlling described scan drive circuit to drive in each row sensing unit
The first controlling switch and the second controlling switch conducting sequential, and by control the plurality of data selector control defeated
Go out the described pumping signal and described second reference signal sequential to sensing electrode.
Alternatively, described capacitance-type sensing device further includes：
Multiple scan line groups, described scan line group includes the first scan line and the second scan line；With
Multiple data wire groups, described data wire group includes the first data wire and the second data wire；
Every scan line group connects a line sensing unit, and each data wire group connects string sensing unit；
Described first controlling switch includes coordination electrode, the first transmission electrode and the second transmission electrode；Described second control
Switch includes coordination electrode, the first transmission electrode and the second transmission electrode；Described first scan line connects described turntable driving electricity
Road and the coordination electrode of described first controlling switch；Described second scan line connects described scan drive circuit and described second control
The coordination electrode of system switch；Described first data wire connects the first transmission electricity of described data selector and the first controlling switch
Pole；Described second data wire connects the first transmission electrode of described reference signal generation circuit and the second controlling switch；Described
Second transmission electrode of one controlling switch connects described sensing electrode；Second transmission electrode of described second controlling switch connects institute
State sensing electrode.
Alternatively, described first data wire is used for transmitting described pumping signal and described second reference signal, and described second
Data wire is used for transmitting described first reference signal, and described scan drive circuit is by described first scan line, the second scan line
There is provided scanning open signal to the first controlling switch and the second controlling switch, to control the first controlling switch and the second controlling switch
Conducting, provides scanning pick-off signal to control to the first controlling switch and second by described first scan line, the second scan line and opens
Close, to control the first controlling switch and the cut-off of the second controlling switch.
Alternatively, described capacitance-type sensing device further includes：
First reference signal line, connects described reference signal generation circuit and the second data wire, for transmitting described first
Reference signal；
Second reference signal line, connects described reference signal generation circuit and the plurality of data selector, for transmitting
Described second reference signal；With
Sensing signal line, connects described sensing drive circuit and the plurality of data selector, for transmitting described excitation
Signal gives sensing drive circuit to sensing electrode and transmission from the sensing signal of sensing electrode.
Alternatively, described capacitance-type sensing device includes capacitance type sensor, and described capacitance type sensor includes the base that insulate
Plate, the plurality of sensing unit, the plurality of scan line group, the plurality of data wire group and described first reference signal
Line, the plurality of sensing unit, the plurality of scan line group, the plurality of data wire group and described first reference signal
Line is formed on described insulated substrate.
Alternatively, the first controlling switch in described each sensing unit and the second controlling switch are thin film transistor (TFT) and open
Close, described insulated substrate is glass substrate.
Alternatively, described sensing unit includes one first controlling switch and one second controlling switch, or, described sensing unit
Including 2 first controlling switches being connected in parallel and 2 second controlling switches being connected in parallel.
Alternatively, described insulated substrate includes first surface and the second surface being oppositely arranged with first surface, and described
One surface is used for receiving the touch of target object or close to input, the plurality of sensing unit, the plurality of scan line group, institute
State multiple data wire groups and described first reference signal line is arranged on described second surface.
Alternatively, the sensing electrode of the plurality of sensing unit is compared to described first controlling switch, described second control
Switch, the plurality of scan line group and the plurality of data wire group are closer to described second surface.
Alternatively, described first controlling switch, described second controlling switch, the plurality of scan line group and described many
Individual data line-group group is located at the side of the sensing electrode of the plurality of sensing unit back to described insulated substrate.
Alternatively, the sensing electrode of the plurality of sensing unit covers described first controlling switch, described second control is opened
Pass, the plurality of scan line group and the plurality of data wire group.
Alternatively, described capacitance type sensor further include described scan drive circuit, the plurality of data selector,
Described second reference signal line and described sensing signal line, described scan drive circuit, the plurality of data selector, described
Second reference signal line and described sensing signal line are formed on the second surface of described insulated substrate.
Alternatively, described scan drive circuit, the plurality of data selector, described second reference signal line and described
Sensing signal line is arranged on around the plurality of sensing unit.
Alternatively, described scan drive circuit and the plurality of data selector all include controlling switch, and described control is opened
Pass is thin film transistor switch.
Alternatively, each data selector includes multiple switch unit, each switch element include first choice switch and
Second selecting switch, described first choice switch includes coordination electrode, the first transmission electrode and the second transmission electrode, and described the
Two selecting switch include coordination electrode, the first transmission electrode and the second transmission electrode, wherein, the control of described first choice switch
The coordination electrode of electrode processed and the second selecting switch is connected respectively with described control unit, the first biography of described first choice switch
Transmission pole is connected with described sensing drive circuit, and the first transmission electrode of described second selecting switch is produced with described reference signal
Circuit connects, and the second transmission electrode of described first choice switch is connected with the second transmission electrode of described second selecting switch
Connect and connect to the first data wire.
Alternatively, described control unit controls first choice switch and the second selecting switch timesharing in same switch element
Conducting.
Alternatively, described capacitance type sensor further includes passivation layer, is formed at the plurality of sensing unit, described many
On individual scan line group, the plurality of data wire group and described first reference signal line.
Alternatively, described capacitance-type sensing device further includes control chip, and described control chip includes described control
Unit, described reference signal generation circuit and described sensing drive circuit.
Alternatively, described capacitance type sensor and described control chip are respectively nude film, and described control chip is bundled in institute
State on insulated substrate；Or, described control chip is arranged on a flexible circuit board, by described flexible circuit board and described electricity
Capacity sensor electrically connects.
Alternatively, described drive circuit further includes modulation circuit, and described modulation circuit is used for driving described in uniform modulation
Dynamic circuit output gives the signal of the plurality of sensing unit, to improve the signal to noise ratio of sensing signal.
Alternatively, described capacitance-type sensing device is fingerprint sensing device.
Because the sensing unit of the capacitance-type sensing device of the present invention further includes the first controlling switch and the second control
Switch, therefore, described drive circuit can be come logical by controlling described first controlling switch and the second controlling switch timesharing conducting
While crossing the first controlling switch driving sensing electrode execution sensing operation turning on, control by the second of conducting further and open
Close and provide the first reference signal to sensing electrode, thus being applied with the sensing electrode of described first reference signal to executing sensing
Sensing electrode parasitic effects be understand, correspondingly, described drive circuit obtain bio information during can reject
Knowable parasitic effects, thus improve the precision of sensing operation.
Further, section senses electrode in driving often row sensing electrode for the described capacitance-type sensing device executes sensing
During operation, provide the second reference signal to all or part of sensing electrode in remaining sensing electrode of same a line, thus applying
Sensing electrode added with described second reference signal is to understand to the parasitic effects of the sensing electrode in execution sensing, accordingly
Ground, described drive circuit can reject knowable parasitic effects during obtaining bio information, thus improving sensing operation
Precision.
The present invention further provides a kind of electronic equipment, described electronic equipment includes the electric capacity described in above-mentioned middle any one
Formula sensing device.
Because described electronic equipment includes described capacitance-type sensing device, therefore, the Consumer's Experience of described electronic equipment is relatively
High.
Brief description
Fig. 1 is the electrical block diagram of bio information sensing device one embodiment of the present invention.
Fig. 2 is the top view of the part-structure of bio information sensing device shown in Fig. 1.
Fig. 3 is that the circuit structure of an embodiment of the data selection circuit of bio information sensing device shown in Fig. 1 is illustrated
Figure.
Fig. 4 is the structural representation of another embodiment of bio information sensing device of the present invention.
Fig. 5 is the cut-away section structural representation of bio information sensing device shown in Fig. 4.
Fig. 6 is the use state figure of bio information sensing device shown in Fig. 4.
Fig. 7 is the manufacture method flow chart of an embodiment of biometric information sensor shown in Fig. 3.
Fig. 8 is the method flow diagram making the first controlling switch and the second controlling switch.
Fig. 9 is the part-structure schematic diagram of the another embodiment of this utility model bio information sensing device.
Figure 10 is the top view of another embodiment of sensing unit of this utility model bio information sensing device.
Figure 11 is the part-structure schematic diagram of the another embodiment of this utility model bio information sensing device.
Figure 12 is the structural representation of an embodiment of this utility model electronic equipment.
Figure 13 is the circuit structure block diagram of an embodiment of electronic equipment shown in Figure 12.
Specific embodiment
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.However, example embodiment can be implemented in a variety of forms, and it is understood not to limit
In embodiment set forth herein；On the contrary, these embodiments are provided so that the present invention will fully and completely, and example be implemented
The design of mode comprehensively conveys to those skilled in the art.For convenience or clear, may exaggerate, omit or schematically show
Go out thickness and size and the quantity schematically illustrating related elements of shown in the accompanying drawings every layer.In addition, the size of element
Not exclusively reflection actual size, and the quantity of related elements not exclusively reflects actual quantity.Because accompanying drawing is of different sizes etc. former
Cause, in different drawings the quantity of shown same or similar or related elements there is not consistent situation.In in figure phase
Same reference represents same or similar structure.So, it should be noted that so that label has regularity and patrols
Collect property etc., in some difference embodiments, same or similar element or structure employ different references, according to technology
Relatedness and related text explanation, those skilled in the art is directly or indirectly to judge to learn.
Additionally, described feature, structure can combine in one or more embodiments in any suitable manner.
In the following description, many details are provided thus being given, embodiments of the present invention to be fully understood.However, ability
Field technique personnel will be appreciated that does not have one of described specific detail or more, or adopts other structures, constituent element etc.,
Technical scheme can also be put into practice.In other cases, known features or operation are not shown in detail or describe to keep away
Exempt from the fuzzy present invention.
Further, following term is exemplary it is not intended that being limited by any way.Read the application it
Afterwards, it would be recognized by those skilled in the art that the statement of these terms is applied to technology, method, physical component and system (no matter mesh
Front whether know), it is inferred to including those skilled in the art after reading the application or its extension educible.
In describing the invention it is to be understood that：" multiple " include two and two or more, " a plurality of " include two
With more than two, clearly specifically limit except non-invention separately has." at least two row " include two row, three row, four row, five row etc. by
Cumulative many various suitable situations.In addition, the word such as " first ", " second " of occurring in each element title and signal name is simultaneously
To limit the sequencing that element or signal occur, but for convenience of element and signal name, clearly distinguish each element with
And each signal is so that description is more succinct.
Need further exist for illustrate be：The capacitance-type sensing device that the present invention provides is applied to bio information sensing device,
Especially fingerprint sensing device.So, the present invention is not limited to this, described capacitance-type sensing device also applicable other suitable type
Sensing device, such as touch sensing device etc..Described bio information sensing device is used for sensing the predetermined bio information of target object.
The described target object such as finger for user, the alternatively other parts of user's body, such as palm, toe, ear etc., or even
Can be the object of other suitable type, and be not limited to human body.Described predetermined bio information is such as fingerprint, palmmprint, ear stricture of vagina etc..
Below, so that capacitance-type sensing device is for biological information sensor as a example, various embodiments of the present invention are said
Bright.
See also Fig. 1 and Fig. 2, Fig. 1 is that the circuit structure of bio information sensing device one embodiment of the present invention shows
It is intended to.Fig. 2 is the top view of the part-structure of bio information sensing device shown in Fig. 1.Described bio information sensing device 1 includes
Multiple sensing electrodes 111 and drive circuit 20.Described drive circuit 20 is connected with the plurality of sensing electrode 111, for driving
Dynamic the plurality of sensing electrode 111 execution bio information sensing.
Generally, capacitive sensing device includes the sensing device of mutual capacitance type and the sensing device of self-capacitance.
Different from the matching relationship of sensing electrode 111 according to drive circuit 20, bio information sensing device 1 can be from electricity
The bio information sensing device of appearance formula or the bio information sensing device of mutual capacitance type.
In the bio information sensing device based on mutual capacitance type, the bio information sensing device of described mutual capacitance type can wrap
Include multiple drive electrodes and multiple sensing electrode.Form mutual capacitance between each drive electrode and a sensing electrode.In sensing,
Drive circuit provides pumping signal to drive electrode, and receives the sensing signal from sensing electrode output.When target object connects
Near or when touching described bio information sensing device, it is formed at the quantity of electric charge meeting of the mutual capacitance between drive electrode and sensing electrode
There is corresponding change, thus, sensing electrode can export corresponding sensing signal to drive circuit, and then obtains associated biomolecule letter
Breath.
In the bio information sensing device based on self-capacitance, the bio information sensing device of described self-capacitance includes
Multiple sensing electrodes.Each sensing electrode can form electric capacity over the ground.In sensing, drive circuit provides pumping signal to sensing
Electrode, and receive the sensing signal from sensing electrode output.When target object approaches or touches described bio information sensing dress
When putting, form electric capacity between target object and sensing electrode, cause the change of the quantity of electric charge in sensing electrode, thus, sensing electricity
Pole exports corresponding sensing signal to drive circuit, and then obtains relevant biological information.
In the present embodiment, described bio information sensing device 1 is, for example, the sensing device of self-capacitance.
The plurality of sensing electrode 111 is arranged in multiple lines and multiple rows mode.So, ground, in other embodiments, institute are changed
Stating multiple sensing electrodes 111 also can be in Else Rule or non-regular arrangement.
Sensing electrode 111 for same row：When described drive circuit 20 provides pumping signal to hold to a sensing electrode 111
During row bio information sensing, provide one first reference signal to the part or all of sensing electrode in remaining sensing electrode 111
111.It is preferred that described drive circuit 20 provides described first reference signal to remaining whole sensing electrode 111.
Because described drive circuit 20 is providing described pumping signal to the sensing electrode in each row sensing electrode 111
When 111, provide described first reference signal to remainder or whole sensing electrode 111, thus, it is applied with described first reference
The sensing electrode 111 of signal is knowable to the parasitic effects of the sensing electrode 111 in execution bio information sensing, thus, institute
State drive circuit 20 and can offset knowable parasitic effects in the follow-up calculating to bio information, and then improve the sense of bio information
Survey precision.
Described first reference signal is, for example, constant voltage signal.
Or, the pressure reduction between described first reference signal and described pumping signal keeps constant, for example, described first ginseng
Examine that signal is identical with described pumping signal, thus reducing remaining sensing electrode 111 and the sensing electricity in execution bio information sensing
The charge/discharge electricity amount of the parasitic capacitance between pole 111, improves the sensing precision of bio information further.
In the present embodiment, described drive circuit 20 drives sensing electrode 111 execution bio information sensing line by line.So,
Change ground, in other embodiments, described drive circuit 20 also can once simultaneously drive multirow sensing electrode 111 to execute life
Thing information senses.
Further, in the present embodiment, for the sensing electrode 111 of same a line：Described drive circuit 20 carries simultaneously
For described pumping signal to section senses electrode 111 execution bio information sensing, and one second reference signal is provided to feel to remaining
Survey the part or all of sensing electrode 111 in electrode 111.It is preferred that providing described second reference signal all to sense to remaining
Electrode 111.
Sensing electrode 111 for same a line：Described drive circuit 20 passes through successively repeatedly to provide described excitation letter simultaneously
Number to section senses electrode 111 execution bio information sensing, thus driven a line sensing electrode 111 execution bio information sense
Survey.
When the plurality of sensing electrode 111 is formed on a chip, using the timesharing driving to a line sensing electrode 111
Mode, thus the pin number on described chip can be reduced, in this regard, have related narration below.
So, change ground, in other embodiments, described drive circuit 20 also can simultaneously drive the sensing electrode of a line
111 are performed both by bio information sensing.For example, the plurality of sensing electrode 111 is formed in display screen.When the plurality of sensing
When electrode 111 is arranged on chip, described drive circuit is also to simultaneously drive the sensing electrode 111 of a line to be performed both by biological letter
Breath sensing.
Further, since described drive circuit 20 is providing described pumping signal to the part sense in each row sensing electrode 111
When surveying electrode 111, provide described second reference signal to the part or all of sensing electrode 111 in remaining sensing electrode 111, from
And, the sensing electrode 111 being applied with described second reference signal is to the parasitism in the sensing electrode 111 executing bio information sensing
Impact is knowable, thus, described drive circuit 20 can offset knowable parasitic effects in the follow-up calculating to bio information,
And then improve the sensing precision of bio information.
Described second reference signal is, for example, constant voltage signal.
Or, the pressure reduction between described second reference signal and described pumping signal keeps constant, for example, described second ginseng
Examine that signal is identical with described pumping signal, thus reducing remaining sensing electrode 111 and the sensing electricity in execution bio information sensing
The charge/discharge electricity amount of the parasitic capacitance between pole 111, improves the sensing precision of bio information further.
In some embodiments, described bio information sensing device 1 includes multiple sensing units 11.Each sensing
Unit 11 includes sensing electrode 111 described in, the first controlling switch 113 and the second controlling switch 115.Described first control is opened
Close 113, described second controlling switch 115 to be all connected with described sensing electrode 111.
Described drive circuit 20 includes scan drive circuit 21, sensing drive circuit 22 and reference signal generation circuit 23.
The first controlling switch 113 in described scan drive circuit 21 and the plurality of sensing unit 11 and 115 points of the second controlling switch
Do not connect, for driving the first controlling switch 113 and the second controlling switch 115 timesharing conducting in each sensing unit 11.Institute
State sensing drive circuit 22 to be connected with sensing electrode 111 by the first controlling switch 113 in each sensing unit 11, be used for passing through
First controlling switch 113 of conducting provides described pumping signal to sensing electrode 111 execution bio information sensing.Described reference letter
Number produce circuit 23 be connected with described sensing electrode 111 by the second controlling switch 115 in each sensing unit 11, be used for passing through
Second controlling switch 115 of conducting provides described first reference signal to sensing electrode 111.
Sensing electrode 111 for same row：When described scan drive circuit 21 drives first in a sensing unit 11
When controlling switch 113 turns on, the second controlling switch 115 is ended, drive the part or all of sensing list in remaining sensing unit 11
First controlling switch 113 of unit 11 is ended, the second controlling switch 115 turns on, and described reference signal generation circuit 23 passes through conducting
The second controlling switch 115 provide described first reference signal to sensing electrode 111.
The first controlling switch 113 that described sensing drive circuit 22 passes through conducting provides described pumping signal to sensing electrode
111 execution bio information sensings, and receive the sensing signal from sensing electrode 111 output, to obtain bio information.
Further, when described scan drive circuit 21 drive a line sensing unit 11 the first controlling switch 113 turn on,
During the second controlling switch 115 cut-off, the first controlling switch 113 that described sensing drive circuit 22 passes through to turn on provides described simultaneously
Pumping signal passes through the of conducting to section senses electrode 111 execution bio information sensing, described reference signal generation circuit 23
One controlling switch 113 provides described second reference signal to the sense of the part or all of sensing unit 11 in remaining sensing unit 11
Survey electrode 111.
In the present embodiment, described drive circuit 20 can further include data selection circuit 24, and described data selects
Circuit 24 is connected respectively with described sensing drive circuit 22 and described reference signal generation circuit 23.Described data selection circuit 24
It is connected with the first controlling switch 113 in each sensing unit 11 further.For each sensing unit 11, selected by described data
Circuit 24 is selecting to export the second reference signal of being provided of described reference signal generation circuit 23 or to export described sensing
The pumping signal that drive circuit 22 is provided is to sensing electrode 111.When described data selection circuit 24 exports described pumping signal
During to a sensing electrode 111, export the sensing signal that described sensing electrode 111 sensed further to described drive circuit 20.
Because described drive circuit 20 is provided with described data selection circuit 24, such that it is able to realize the sensing electricity to each row
Pole 111 carries out timesharing execution bio information sensing.
In one embodiment, described data selection circuit 24 includes multiple data selectors (Multiplexer) 241.
Each data selector 241 coupling part sensing unit 11, and further with described reference signal generation circuit 23 and described sense
Survey drive circuit 22 to connect respectively.The plurality of data selector 241 is used for selecting output described pumping signal or described second
Reference signal is to sensing electrode 111.Alternatively, each data selector 241 connects at least two row sensing units 11.
Described drive circuit 20 once exports described pumping signal to a sensing by each data selector 241 simultaneously respectively
Electrode 111 execution bio information sensing, and described second reference signal is exported respectively to same a line by each data selector 241
Remaining sensing electrode 111 in part or all of sensing electrode 111.
Described drive circuit 20 passes through successively repeatedly to pass through each data selector 241 simultaneously and the first control of conducting is opened
Close 113 and export described pumping signal to sensing electrode 111, to have driven a line sensing electrode 111 execution bio information sensing.
Change ground, in other embodiments, described data selection circuit 24 is alternatively other suitable circuit knots
Structure is it is not limited to multiple data selectors 241 described herein.In addition, when described drive circuit 20 provide simultaneously described swash
When encouraging signal to the sensing electrode 111 often gone, described data selection circuit 24 may also be omission.
Described drive circuit 20 can further include control unit 30.Described control unit 30 and described scan drive circuit
21 and the plurality of data selector 241 connect respectively, for controlling described scan drive circuit 21 to drive each row sensing unit
The first controlling switch 113 in 11 and the conducting sequential of the second controlling switch 115, and selected by controlling the plurality of data
Device 241 is controlling the sequential exporting described pumping signal and described second reference signal to sensing electrode 111.
For example, described control unit 30 controls described scan drive circuit 21 to turn on the first controlling switch 113 line by line, and
When controlling first controlling switch 113 of each row sensing unit 11 to turn on, control the sensing of partly going in remaining row or whole row
Second controlling switch 115 of unit 11 turns on.For same sensing unit 11：Described control unit 30 controls described turntable driving
Circuit 21 timesharing turns on the first controlling switch 113 and the second controlling switch 115.
Described control unit 30 controls the described data selector 241 timesharing described pumping signal of output to give described data choosing
Select each sensing unit 11 that device 241 is connected.
In some embodiments, described bio information sensing device 1 for example further include multiple scan line group B and
Multiple data wire group D.Every scan line group B connects a line sensing unit 11, and each data wire group D connects string sensing
Unit 11.
Specifically, every scan line group B includes the first scan line B1 and the second scan line B2.Each data wire group D
Including the first data wire D1 and the second data wire D2.
Described first controlling switch 113 includes coordination electrode G1, the first transmission electrode S11 and the second transmission electrode S12.
Described second controlling switch 115 includes coordination electrode G2, the first transmission electrode S21 and the second transmission electrode S22.Described first
Scan line B1 connects coordination electrode G1 of described scan drive circuit 21 and described first controlling switch 113.Described second scanning
Line B2 connects coordination electrode G2 of described scan drive circuit 21 and described second controlling switch 115.Described first data wire D1
Connect the first transmission electrode S11 of described data selector 241 and the first controlling switch 113.Described second data wire D2 connects
Described reference signal generation circuit 23 and the first transmission electrode S21 of the second controlling switch 115.Described first controlling switch 113
Second transmission electrode S12 connect described sensing electrode 111.Second transmission electrode S22 of described second controlling switch 115 connects
Described sensing electrode 111.
Described first data wire D1 is used for transmitting described pumping signal and described second reference signal, described second data wire
D2 is used for transmitting described first reference signal, and described scan drive circuit 21 is by described first scan line B1, the second scan line
B2 provides scanning open signal to the first controlling switch 113 and the second controlling switch 115, to control the first controlling switch 113 He
Second controlling switch 115 turns on, and provides scanning pick-off signal to the first control by described first scan line B1, the second scan line B2
System switch 113 and the second controlling switch 115, to control the first controlling switch 113 and the second control to open 115 passes cut-offs.
Described first scan line B1 and the second scan line B2 all extend, in the row direction along column direction arrangement.Described first number
All extend, arrange in the row direction along column direction according to line D1 and described second data wire D2.
In some embodiments, described bio information sensing device 1 for example further include the first reference signal line R1,
Second reference signal line R2 and sensing signal line L.Described first reference signal line R1 connects described reference signal generation circuit 23
With the second data wire D2, for transmitting described first reference signal.Described second reference signal line R2 connects described reference signal
Produce circuit 23 and the plurality of data selector 241, for transmitting described second reference signal.Described sensing signal line L is even
Connect described sensing drive circuit 22 and the plurality of data selector 241, for transmitting described pumping signal to sensing electrode 111
And transmission is derived from the sensing signal of sensing electrode 11 to sensing drive circuit 22.
Described first reference signal line R1, the second reference signal line R2 and sensing signal line L mainly extend in the row direction.
Refer to Fig. 3, Fig. 3 is that the circuit structure of the embodiment of data selector 241 shown in Fig. 1 of the present invention is illustrated
Figure.Described data selector 241 includes 8 switch elements 243, each switch element 243 include one first choice switch S1 and
One second selecting switch S2.Described first choice switch S1 includes coordination electrode G3, the first transmission electrode S31 and second transmission
Electrode S32.Described second selecting switch S2 includes coordination electrode G4, the first transmission electrode S41 and the second transmission electrode S42.Institute
State control unit 30 to be connected respectively with coordination electrode G3 in each switch element 243 and coordination electrode G4.Described first transmission
Electrode S31 is connected with described sensing drive circuit 22.Described first transmission electrode S41 is with described reference signal generation circuit 23 even
Connect.The second transmission electrode S32 in each switch element 243 and the second transmission electrode S42 is connected, and connects to the first control
First transmission electrode S11 of system switch 113.
For same switch element 243：Described control unit 30 controls described first choice switch S1 and second to select to open
Close S2 timesharing conducting, i.e. when first choice switch S1 conducting, the second selecting switch S2 cut-off, when the second selecting switch S2 is led
When logical, first choice switch S1 cut-off.For same data selector 241：When described control unit 30 controls a switch element
When the first choice switch S1 conducting in 243, the second selecting switch S2 cut-off, control the first choosing in rest switch unit 243
Select switch S1 cut-off, the second selecting switch S2 conducting.S1 is switched by the first choice of conducting, described sensing drive circuit 22 carries
The sensing electrode 111 of the sensing unit 11 turning on for described pumping signal to the first controlling switch 113；By the second choosing of conducting
Select switch S2, described reference signal generation circuit 23 provides the biography that described second reference signal turns on to the second controlling switch 115
The sensing electrode 111 of sense unit 11.
In the present embodiment, the quantity of the plurality of data selector 241 for example, 16, each data selector
241 include 8 switch elements 243.Accordingly, it is 128 with the quantity of the sensing electrode 111 of a line.
It should be noted that in FIG, being limited to the size of accompanying drawing, Fig. 1 only illustrates each data selector 241 respectively
It is connected with two row sensing units 11, if corresponding with the structure of the data selector 241 shown in Fig. 3, Fig. 1 actually eliminates often
The structure that one data selector 241 is also connected with other six row sensing units 11.In addition, the structure of Fig. 4 described later and Fig. 1 institute
The structure shown is corresponding, equally eliminates the structure that each data selector 241 is also connected with other six row sensing units 11,
Explain in this together.
Correspondingly, described drive circuit 20 for example exports 16 by described 16 data selectors 241 every time simultaneously and swashs
Encourage signal to correspond to 16 sensing electrodes 111 with a line, and 112 the second reference signals of output simultaneously correspond to a line
112 sensing electrodes 111.
Be as a example fingerprint sensing device by described bio information sensing device 1, when the finger of user approach or touch described
During the sensing electrode 111 of multiple sensing units 11, because ridge, paddy are different from the distance of sensing electrode 111, therefore, ridge, paddy and sense
Survey the corresponding difference of electric capacity that electrode 111 is formed respectively, thus the impact to the quantity of electric charge in sensing electrode 111 is just different, from
And drive circuit 20 can know corresponding finger print information according to the sensing signal of sensing electrode 111 output.
The operation principle of described bio information sensing device 1 one embodiment is as follows.
Described control unit 30 controls the first choice in the switch element 243 in each data selector 241 to switch S1
Conducting, the second selecting switch S2 cut-off, control the first choice in the rest switch unit 243 in each data selector 241 to open
Close S1 cut-off, the second selecting switch S2 conducting, correspondingly, described sensing drive circuit 22 passes through to lead in each data selector 241
Logical first choice switch S1 provides described pumping signal to the first data wire D1, and described reference signal generation circuit 23 passes through
In each data selector 241, the second selecting switch S2 of conducting provides described second reference signal to the first data wire D1.Logical
Cross many secondary control of described control unit 30, the first choice in each switch element 243 in described each data selector 241 is opened
Close S1 timesharing conducting.
Described control unit 30 controls described scan drive circuit 21 to drive the first controlling switch 113 to turn on line by line, second
Controlling switch 115 is ended, and turn in the first controlling switch 113 controlling each row respectively, the second controlling switch 115 cut-off same
When, the first controlling switch 113 of control remaining row is ended, the second controlling switch 115 turns on, correspondingly, described first data wire
The first controlling switch 113 that pumping signal on D1 passes through conducting exports to sensing electrode 111, and receives from sensing electrode
The sensing signal of 111 outputs, to execute bio information sensing, the second reference signal on described first data wire D1 passes through conducting
The first controlling switch 113 export to sensing electrode 111, in addition, described reference signal generation circuit 23 pass through conducting second
Controlling switch 115 provides described first reference signal to sensing electrode 111.
By when each drive part sensing electrode 111 executes bio information sensing, providing the first reference signal and the
Two reference signals give remaining corresponding sensing electrode 111, to improve the sensing of the bio information of described bio information sensing device further 1
Precision.
See also Fig. 1, Fig. 4 to Fig. 6, Fig. 4 is the knot of another embodiment of bio information sensing device of the present invention
Structure schematic diagram.Fig. 5 is the cut-away section structural representation of bio information sensing device shown in Fig. 4.Fig. 6 is biological letter described in Fig. 4
The use state figure of breath sensing device.Described bio information sensing device 1 includes biometric information sensor 2.Described bio information
Sensor 2 includes insulated substrate 2a, the plurality of sensing unit 11, the plurality of scan line group B, the plurality of data line-group
Group D and described first reference signal line R1.The plurality of sensing unit 11, the plurality of scan line group B, the plurality of number
It is formed on described insulated substrate 2a according to line-group group D and described first reference signal line R1.
In the present embodiment, the first controlling switch 113 in described each sensing unit 11 and the second controlling switch 115
As being thin film transistor (TFT) (Thin Film Transistor, TFT) switch, described insulated substrate 2a is, for example, glass substrate,
Thus, described biometric information sensor 2 is made using the technique forming TFT switch on glass substrate, and then reduces biological letter
Breath sensor 2 and the manufacturing cost including described biometric information sensor 2.When described first controlling switch 113, second
When controlling switch 115 is thin film transistor switch, described coordination electrode G1, G2 is grid, described first transmission electrode S11, S21
For source electrode, described second transmission electrode S12, S22 is drain electrode.
So, the present invention is not intended to limit described insulated substrate 2a is glass substrate, the insulation base of alternatively other suitable type
Plate, equally, does not limit described first controlling switch 113 yet and described second controlling switch 115 is thin film transistor switch,
Can be the switch of other suitable type.
Described thin film transistor switch is, for example, low temperature polycrystalline silicon (LTPS) thin film transistor switch, indium gallium zinc
(IGZO) thin film transistor switch of the suitable type such as thin film transistor switch, amorphous silicon film transistor switch.It is preferred that institute
State thin film transistor switch to switch for low-temperature polysilicon film transistor.
Described insulated substrate 2a includes the first surface A1 and second surface A2 being oppositely arranged with first surface A1, and described
One surface A 1 is used for receiving the touch of target object or close to input, the plurality of sensing unit 11, the plurality of scanning line-group
Group B, the plurality of data wire group D and described first reference signal line R1 are arranged on described second surface A2.
The sensing electrode 111 of the plurality of sensing unit 11 is compared to described first controlling switch 113, described second control
Switch 113, the plurality of scan line group B and the plurality of data line-group D group are closer to described second surface A2.
Described first controlling switch 113, described second controlling switch 115, the plurality of scan line group B and described many
Individual data line-group group D is located at the side of the sensing electrode 111 of the plurality of sensing unit 11 back to described insulated substrate 2a.
It is preferred that the sensing electrode 111 of the plurality of sensing unit 11 cover described first controlling switch 113, described
Two controlling switches 115, the plurality of scan line group B and the plurality of data wire group D.
Described biometric information sensor 1 further includes passivation layer 16, and described passivation layer 16 is arranged on the plurality of sensing
On unit 11, the plurality of scan line group B, the plurality of data wire group D and described first reference signal line R1.
Described passivation layer 16 is used for planarizing the surface of described biometric information sensor 2, and single to the plurality of sensing
First 11 grade elements are protected.
See also Fig. 5 and Fig. 7, Fig. 7 is the manufacture method flow chart of an embodiment of biometric information sensor 2.
The manufacture method of described biometric information sensor 2 is as follows.
F1：One insulated substrate 2a is provided；
Described insulated substrate 2a is, for example, glass substrate.
F2：The plurality of sensing electrode 111 is formed on described insulated substrate 2a；
Described sensing electrode 111 is for example made up of metal material.So, change ground, described sensing electrode 111 alternatively has
Other suitable conductive materials are made, and for example, described sensing electrode 111 also can be made up of transparent conductive material, described transparent
Conductive material is, for example, tin indium oxide, indium zinc oxide etc..In addition, described sensing electrode also can be by alloy material systems such as molybdenum lithium molybdenums
Become.
F3：First insulating barrier 12 is formed on the plurality of sensing electrode 111；
The described first insulating barrier 12 for example, material such as silicon oxide, silicon nitride is made.
F4：First controlling switch 113 and the second controlling switch 115 are formed on described first insulating barrier 12, and in described
Formed on first insulating barrier 12 and be through to the through hole H of sensing electrode 111, by described through hole H, the first controlling switch 113 and the
Two controlling switches 115 are connected with sensing electrode 111；
First controlling switch 113 of each sensing unit 11 and the second controlling switch 115 are formed in sensing electrode 111
Side, and be connected with sensing electrode 111 by through hole H respectively.
F5：Passivation layer 16 is formed on described first controlling switch 113 and described second controlling switch 115.
Described biometric information sensor 2 makes and finishes.It should be noted that in above-mentioned manufacture method, omitting and formed
The step of the plurality of scan line group B, multiple data wire group D and the first reference signal line R1.
The processing technology of the biometric information sensor 2 due to being formed according to above-mentioned manufacture method is simple, need not additionally set again
Put a cover sheet or form coat (Coating layer), thus manufacturing cost can be saved.
So, change ground, in other embodiments, the manufacture method of described biometric information sensor 2 is alternatively：Institute
State the first controlling switch 113 that each sensing unit 11 is formed on insulated substrate 2a and the second controlling switch 115, control in first and open
Form the first insulating barrier 12 on pass 113 and the second controlling switch 115, and formation is through to first on described first insulating barrier 12
The through hole H of the second transmission electrode S22 of the second transmission electrode of controlling switch 113 and the second controlling switch 115, then described
Formed on first insulating barrier 12 and connect described first controlling switch 113 of each sensing unit 11 and described second controlling switch 115
On sensing electrode 111, next, in sensing electrode 111 setting cover sheet or formed coat (Coating layer).
So, also possible.It should be noted that also omit to the plurality of scan line group B, multiple data wire group herein
The description of the step of D and the first reference signal line R1.
Continue with refering to Fig. 5, and see also Fig. 8, Fig. 8 is to make the first controlling switch 113 to open with the second control
Close 115 method flow diagram.So that the first controlling switch 113 and the second controlling switch 115 are as amorphous silicon film transistor as a example, right
Form the first controlling switch 113 during making biometric information sensor 2 and the manufacture method of the second controlling switch 115 is entered
Row is described as follows.
F41：Coordination electrode G1 and second controlling switch of the first controlling switch 113 are formed on described first insulating barrier 12
115 coordination electrode G2；
F42：Form the second insulating barrier 13 in described first insulating barrier 12, described coordination electrode G1, G2；
The described second insulating barrier 13 for example, material such as silicon oxide, silicon nitride is made.
F43：Active layer 14,15 is formed on described second insulating barrier 13；
Described active layer 14,15 is amorphous silicon layer.
F44：Formed on described second insulating barrier 13 and described first insulating barrier 12 and be through to described sensing electrode 111
Through hole H；
It should be noted that step F4 and step F5 can be incorporated in same step realizing, so, alternatively different at two
Formed in step.
F45：First transmission electrode S11 and second biography of the first controlling switch 113 is formed on described second insulating barrier 13
Transmission pole S12, the first transmission electrode S21 and the second transmission electrode S22 of formation the second controlling switch 115, and described second biography
Transmission pole S12 and the second transmission electrode S22 are full of described through hole H, are connected with connecting described sensing electrode 111 respectively.
Described first transmission electrode S11 and the second transmission electrode S12 is located at the both sides of described active layer 14, described first biography
Transmission pole S21 and the second transmission electrode S22 are located at the both sides of described active layer 15, thus forming described first controlling switch 113
With described second controlling switch 115.
In the present embodiment, the second transmission electrode S12 of described first controlling switch 113 and described second controlling switch
115 the second transmission electrode S22 is connected with described sensing electrode 111 by a through hole H respectively.So, in other embodiments,
The second transmission electrode S12 of described first controlling switch 113 in same sensing unit 11 and described second controlling switch 115
Second transmission electrode S22 can be connected with described sensing electrode 111 by same through hole H.
In step F5：In described second insulating barrier 13, the first transmission electrode S11, active layer 14, the second transmission electrode S12,
Form described passivation layer 16 on first transmission electrode S21, active layer 15, the second transmission electrode S22.
The first controlling switch 113 being formed in above-mentioned manufacture method and the second controlling switch 115 mainly bottom gate type
(Bottom-Gate) thin film transistor (TFT), so, described first controlling switch 113 and the second controlling switch 115 are alternatively top gate type
(Top-Gate) thin film transistor (TFT), such as low-temperature polysilicon film transistor.
Need it is further noted that the plurality of scan line group B, multiple data wire group D, the first reference signal line
R1, described first controlling switch 113, described second controlling switch 115 connection cabling last for example by the modes such as via with
On the second surface A2 of described insulated substrate 2a formed surrounding's wiring (sign) be connected, with aforesaid drive circuit 20
Or corresponding circuit carries out signal transmission in control chip 3 described later.
Alternatively, described biometric information sensor 2 further includes described scan drive circuit 21, the choosing of the plurality of data
Select device 241, described second reference signal line R2 and described sensing signal line L.Described scan drive circuit 21, the plurality of number
Become the second of described insulated substrate 2a with described sensing signal line L-shaped according to selector 241, described second reference signal line R2
In surface A 2.
Described scan drive circuit 21, the plurality of data selector 241, described second reference signal line R2 and described
Sensing signal line L is arranged on the plurality of sensing unit 11 around.
The first choice switch S1 of described data selector 241 and the second selecting switch S2 are for example also thin film transistor (TFT)
Switch.Described scan drive circuit 21 generally comprises multiple controlling switch (not shown), and the plurality of controlling switch is, for example,
Thin film transistor switch.Correspondingly, the plurality of data selector 241 and described scan drive circuit 21 are in the described first control
When switch 113 and described second controlling switch 115 are formed, formed in the lump by same or analogous processing technology, thus improving
The integrated level of biometric information sensor 2, and reduce cost of manufacture.
In some embodiments, described bio information sensing device 1 includes control chip 3, and described control chip 3 includes
Described control unit 30, described reference signal generation circuit 23 and described sensing drive circuit 22.That is, aforesaid drive circuit
A part of circuit in 20 is formed in control chip 3, and a part is formed on biometric information sensor 2, is arranged such, a side
The integrated level of bio information sensing device 1 is improved in face, reduces the volume of described bio information sensing device 1, in addition, also can reduce
The manufacturing cost of bio information sensing device 1.
Alternatively, described biometric information sensor 2 and described control chip 3 are for example respectively nude film (Die), described control
Chip 3 is for example arranged on described insulated substrate 2a by flip technique (Flip-Chip).When described insulated substrate 2a is, for example,
During glass substrate, described control chip 3 is for example bound by the mode of glass top chip (Chip On Glass, COG)
(Bonding) on described glass substrate.When described insulated substrate 2a is, for example, film substrate, described control chip 3 is for example
It is bundled on described film substrate by the mode of chip-on-film (Chip On Film, COF).So, described control chip 3
Can be formed on described insulated substrate 2a using other suitable techniques, be not limited to flip technique described herein.
After described control chip 3 is arranged on the insulated substrate 2a of described biometric information sensor, then by described control
Coremaking piece 3 and described biometric information sensor 1 are placed in a mold, and by being molded (Molding) technique formation packaging body, (figure is not
Show) on described biometric information sensor 2 and described control chip 3, thus being formed as a chip (Chip).Described encapsulation style
As being made up of epoxide resin material, but it is not limited to described epoxide resin material, alternatively other suitable materials.
After described bio information sensing device 1 is formed, the first surface A1 of described insulated substrate 2a is used for receiving target
Object approach or touch input, in other words, when user uses described bio information sensing device 1 sensing bio information, institute
State first surface A1 compared to described second surface A2 more adjacent objects object.
In other embodiments, described scan drive circuit 21, described data selection circuit 24, described second reference letter
Number line R2 and described sensing signal line L also can non-be arranged on described insulated substrate 2a.For example described scan drive circuit 21 He
Described data selection circuit 24 may also be arranged in described control chip 3, or, it is arranged in other chip, or, with
Circuit mode outside chip exists also possible.
Refer to Fig. 9, Fig. 9 is the structural representation of the another embodiment of bio information sensing device of the present invention.Described life
Thing information sensor 1 further includes connector 4, and described connector 4 is used for connecting described control chip 3 and described biological letter
Breath sensor 2.Described connector 4 is, for example, flexible circuit board (Flexible Printed Circuit Board, FPCB).Institute
State control chip 3 to be for example arranged on described flexible circuit board 4, and passed by described flexible circuit board 4 and described bio information
Sensor 2 connects.By described flexible circuit board 4, between described biometric information sensor 2 and described control chip 3, carry out letter
Number transmission.
In this embodiment, described biometric information sensor 2 and described control chip 3 also can be a chip
(Chip), or, described biometric information sensor 2 is nude film, and described control chip 3 is chip, or, described bio information passes
Sensor 2 and described control chip 3 are nude film.
In the respective embodiments described above, when described biometric information sensor 2 is nude film or chip, by arranging described data
Selection circuit 24 controls timesharing output drive signal to the sensing electrode 111 with a line to correspond to.Because described data selects electricity
Each data selector 241 on road 24 is respectively provided with the Single port (not shown) being connected with described sensing drive circuit 22, institute
State port to be used for transmitting pumping signal or sensing signal, correspondingly, each port corresponding setting on described biometric information sensor 2
One connection pin (not shown), in order to connect described port and described sensing drive circuit 22.So, it is possible to reduce bio information
The quantity of the connection pin between sensor 2 and control chip 3.
Change ground, in other embodiments, for example, described biometric information sensor 2 is alternatively formed at display screen
In or display screen on, and be not integrated into a nude film or a chip.Be formed in display screen when described biometric information sensor 2 or
When on display screen, described control chip 3 can simultaneously drive a line sensing electrode 111 execution bio information sensing.
Refer to Figure 10, Figure 10 is the structural representation of another embodiment of sensing unit of the present invention.Described sensing unit
11 include 2 first controlling switches 113 being connected in parallel and 2 second controlling switches 115 being connected in parallel.
Refer to Figure 11, Figure 11 is the structural representation of the another embodiment of bio information sensing device of the present invention.Institute
State and be connected by a single data wire L1 respectively between drive circuit 20 and each sensing electrode 111, omit the first controlling switch
113 and second controlling switch 115.Correspondingly, described drive circuit 20 passes through to export corresponding signal respectively to each sensing electrode
111 is also feasible.
Refer to Figure 12, Figure 12 is the structural representation of an embodiment of electronic equipment of the present invention.Described electronic equipment 9
Including the bio information sensing device 1 described in any of the above-described embodiment.Described electronic equipment 9 is, for example, that portable electronic produces
Product, household formula electronic product or vehicle electronics product.However, described electronic equipment does not limit to electronic product listed herein, also
It can be the electronic product of other suitable type.Described portable electronic product is, for example, mobile terminal, described mobile terminal example
As for the suitable mobile terminal such as mobile phone, panel computer, notebook computer, Wearable product.Described household formula electronic product example
As for the suitable household formula electronic product such as intelligent door lock, TV, refrigerator, desktop computer.Described vehicle electronics product is, for example,
The suitable vehicle electronics product such as Vehicular display device, drive recorder, navigator, car refrigerator.
So that described electronic equipment 9 is as mobile phone as a example, described bio information sensing device 1 is just for example being arranged on described mobile phone
Any appropriate position such as face, side, back side, in addition, described bio information sensing device 1 may be configured as exposing the outer of mobile phone
Shell, may also be arranged on the inside of mobile phone.In this embodiment, described bio information sensing device 1 is arranged on the front of mobile phone.
The bio information being sensed according to described bio information sensing device 1, described electronic equipment 9 for example carries out user
Identification authentication, on-line payment, quickly startup application program (APP) etc..
Because described electronic equipment 9 includes described bio information sensing device 1, the sense of described bio information sensing device 1
Survey precision higher, therefore, the better user experience of described electronic equipment 9.
Refer to Figure 13, Figure 13 is the circuit block diagram of electronic equipment one embodiment shown in Figure 12.Described electronic equipment 9
Further include main control chip 5.Described main control chip 5 is connected with described bio information sensing device 1, for believing with described biology
Breath sensing device 1 enters row data communication.Described main control chip 5 is, for example, one chip or chipset.When main control chip 5 is chip
During group, described chipset includes application processor (Application Processor, AP) and power supply chip.In addition, described core
Piece group can further include storage chip.When main control chip 5 is one chip, described main control chip 5 is, for example, that application is processed
Device.Further, described application processor also can be replaced central processing unit (Central Processing Unit, CPU).
Described main control chip 5 includes earth terminal 50, and described earth terminal 50 connects equipment ground, the ground connection letter on receiving device ground
Number, ground signalling is represented with GND in Fig. 9.Also known as systematically, for example, the power supply of electronic equipment 9 is negative on described equipment ground
Pole, power supply is such as battery.Described ground signalling GND also known as system ground voltage, system earth signal, equipment ground voltage or sets
Standby earth signal etc..Described ground signalling GND is constant voltage, as the voltage reference of each circuit in electronic equipment 9, described
Ground signalling GND is, for example, the voltage signal such as 0V (volt), 2V, (- 1) V.Generally, described equipment ground not earth ground or absolute
Greatly.So, when electronic equipment 9 is connected with earth ground by conductor, it is likely to as earth ground described equipment.
In aforesaid each embodiment, described bio information sensing device 1 can be with a domain as voltage reference.
Described domain is the domain on the basis of ground signalling GND.Described ground signalling GND is as each circuit in bio information sensing device 1
Voltage reference.
For improving the signal to noise ratio of the sensing signal of bio information sensing device 1, present invention further propose that using modulation skill
Art scheme improves the technical purpose of signal to noise ratio to reach, and described modulation technique scheme is applied to the life described in the respective embodiments described above
Thing information sensor 1.
For example, reach uniform modulation by the technical scheme on modulation ground to export to the signal of sensing unit 11.
Specifically, described drive circuit 20 for example further includes the first earth terminal 31, the second earth terminal 32, modulation circuit
33 and voltage generation circuit 34.Described modulation circuit 33 be connected to described first earth terminal 31 and described second earth terminal 32 it
Between.Described modulation circuit 33 is connected with described voltage generation circuit 34 further.Described first earth terminal 31 connects to equipment
Ground.Described voltage generation circuit 34 is used for providing voltage drive signals to described modulation circuit 33.Described modulation circuit 33
According to ground signalling GND of described voltage drive signals and described equipment ground to correspond to generation modulated signal MGND give described second
Earth terminal 32.Described modulated signal MGND exports to the letter on described sensing unit 11 for drive circuit 20 described in uniform modulation
Number, for example, described first reference signal, described second reference signal, described pumping signal, described scanning open signal and institute
State scanning pick-off signal.Wherein, the ground (for example, second earth terminal 32) loading described modulated signal MGND is modulation ground.
For example, described pumping signal includes first voltage signal and second voltage signal.Described pumping signal is the first electricity
Pressure signal and the square-wave pulse signal of second voltage signal alternate.Wherein, described first voltage signal is less than described second
Voltage signal, described first voltage signal is, for example, ground signalling GND.Described modulated signal MGND is used for raising described second electricity
Pressure signal, to improve the signal to noise ratio of sensing signal.
When described drive circuit 20 receives from the sensing signal of sensing electrode 111 output, need to sensing signal
Carry out back-modulation, to obtain corresponding bio information.
In this embodiment, described bio information sensing device 1 is with two domains as voltage reference.Two domains are divided
It is not shown as the domain 60 on the basis of ground signalling GND and the domain on the basis of modulated signal MGND 70.Wherein, to be grounded letter
The earth terminal of the circuit in domain 60 on the basis of number GND is all directly connected to equipment ground, in the domain on the basis of modulated signal MGND
The earth terminal of the circuit in 70 is all directly connected to modulation ground.Further, for modulate for the circuit on ground, its reference ground electricity
Modulated signal MGND that position is loaded by modulation ground；For with equipment for ground circuit, its ground reference is equipment ground institute
Ground signalling GND loading.
In the present embodiment, described control unit 30, described scan drive circuit 21, described data selection circuit 24,
Described reference signal generation circuit 23 and sensing unit 11 are for example arranged in domain 70.Described sensing drive circuit 22 is for example
A part is located in domain 60, and a part is located in domain 70.Described main control chip 5, described modulation circuit 33, described voltage produce electricity
Road 34 is located in domain 60.
So, change ground, the present invention does not limit to division in domain 60,70 for the foregoing circuit, and manufacturer can be according to actual need
Will, for example circuit conditions are different, and correspondence does different adjustment etc..
Described bio information sensing device 1 can further include earth lead G, and described earth lead G is around the plurality of sensing
Unit 11 is arranged, and in some embodiments, described earth lead G is latticed, is located at same layer with described sensing electrode 111,
Arrange around described sensing electrode 111 respectively.Change ground, described earth lead G is alternatively in the plurality of sensing unit 11
Periphery setting one circle etc. is also possible.
In addition, when described bio information sensing device 1 be with domain as voltage reference, described domain be to be grounded letter
During domain on the basis of number GND, described first reference signal and/or for example, relatively described ground signalling of described second reference signal
GND is constant voltage signal.So, when described bio information sensing device 1 is with two domains 60 and 70 as voltage reference
When, described first reference signal and/or for example, relatively described ground signalling GND of described second reference signal are the voltage of change
Signal, relatively described modulated signal MGND is constant voltage signal.
Further, except above by the technical scheme using modulation ground, modulation power source end or reference may also be employed
The power supply voltage signal of power supply, carrys out drive circuit 20 described in uniform modulation and exports to the signal of the plurality of sensing unit 11.
Need it is further noted that by arranging described first controlling switch 113 and the second controlling switch 115, can subtract
The pin that few sensing unit 11 is connected with peripheral circuit (for example, sensing drive circuit 22, reference signal generation circuit 23).
Although embodiment be described already in connection with specific configuration and the sequence of operation here it should be appreciated that, replace
The embodiment in generation can increase, omit or change element, operation etc..Therefore, embodiment disclosed herein is meant to be real
Apply example rather than restriction.
Claims (32)
1. a kind of capacitance-type sensing device, including：
Multiple sensing units, each sensing unit includes：
Sensing electrode；
First controlling switch, is connected with described sensing electrode；With
Second controlling switch, is connected with described sensing electrode；With
Drive circuit, is connected with the first controlling switch of the plurality of sensing unit and the second controlling switch, respectively for controlling
First controlling switch and the second controlling switch timesharing conducting in same sensing unit, and by the first controlling switch transmission of conducting
Pumping signal executes sensing operation to sensing electrode, transmits one first reference signal to sensing by the second controlling switch of conducting
Electrode.
2. capacitance-type sensing device according to claim 1 it is characterised in that：Described first reference signal and described excitation
Signal is identical.
3. capacitance-type sensing device according to claim 1 it is characterised in that：For same row sensing electrode：
When driving the first controlling switch conducting in wherein one sensing unit, the second controlling switch to end when described drive circuit,
The first controlling switch cut-off of the part or all of sensing unit in remaining sensing unit, the second controlling switch is driven to turn on.
4. capacitance-type sensing device according to claim 3 it is characterised in that：Described drive circuit passes through the first of conducting
Controlling switch provides described pumping signal to execute sensing operation to sensing electrode, and receives the sensing letter from sensing electrode output
Number, to execute the sensing operation of self-capacitance.
5. capacitance-type sensing device according to claim 4 it is characterised in that：Described drive circuit includes turntable driving electricity
Road, sensing drive circuit and reference signal generation circuit, wherein, described scan drive circuit is used for driving described first control
The conducting of switch and described second controlling switch and cut-off, described sensing drive circuit is used for the first controlling switch by conducting
Drive sensing electrode execution sensing operation, described reference signal generation circuit is used for providing institute by the second controlling switch of conducting
State the second reference signal to sensing electrode.
6. according to claim 1 or 5 capacitance-type sensing device it is characterised in that：When described scan drive circuit drives
When the first controlling switch conducting of a line sensing unit, the second controlling switch cut-off, described sensing drive circuit passes through conducting
First controlling switch provides described pumping signal to execute sensing operation to section senses electrode simultaneously, and described reference signal produces electricity
The first controlling switch that conducting is passed through on road further provides same second reference signal to the part in remaining sensing unit or complete
The sensing electrode of portion's sensing unit.
7. capacitance-type sensing device according to claim 6 it is characterised in that：Described second reference signal and described first
Reference signal is identical.
8. capacitance-type sensing device according to claim 6 it is characterised in that：Sensing electrode for same a line：Described
Drive circuit simultaneously drives section senses electrode execution sensing operation every time, is driven by multiple, until having driven a line to sense
Electrode executes sensing operation.
9. capacitance-type sensing device according to claim 6 it is characterised in that：Described drive circuit further includes multiple
Data selector, the plurality of data selector connects described reference signal generation circuit and described sensing drive circuit, each
Data selector passes through the sensing electrode of the first controlling switch coupling part sensing unit further, and described data selector is used for
Select to export described pumping signal or described second reference signal to sensing electrode.
10. capacitance-type sensing device according to claim 9 it is characterised in that：Described drive circuit once passes through simultaneously
Each data selector exports described pumping signal respectively to a sensing electrode execution sensing operation, and is divided by each data selector
Not export described second reference signal to the part or all of sensing electrode in remaining sensing electrode of a line.
11. capacitance-type sensing devices according to claim 10 it is characterised in that：Described capacitance-type sensing device is further
Including control unit, described control unit is connected respectively with described scan drive circuit and the plurality of data selector, is used for
Described scan drive circuit is controlled to drive the conducting sequential of the first controlling switch in each row sensing unit and the second controlling switch,
And export described pumping signal with described second reference signal to sensing by controlling the plurality of data selector to control
The sequential of electrode.
12. capacitance-type sensing devices according to claim 11 it is characterised in that：Described capacitance-type sensing device is further
Including：
Multiple scan line groups, described scan line group includes the first scan line and the second scan line；With
Multiple data wire groups, described data wire group includes the first data wire and the second data wire；
Every scan line group connects a line sensing unit, and each data wire group connects string sensing unit；
Described first controlling switch includes coordination electrode, the first transmission electrode and the second transmission electrode；Described second controlling switch
Including coordination electrode, the first transmission electrode and the second transmission electrode；Described first scan line connect described scan drive circuit and
The coordination electrode of described first controlling switch；Described second scan line connects described scan drive circuit and described second control is opened
The coordination electrode closed；Described first data wire connects the first transmission electrode of described data selector and the first controlling switch；Institute
State the first transmission electrode that the second data wire connects described reference signal generation circuit and the second controlling switch；Described first control
Second transmission electrode of switch connects described sensing electrode；Second transmission electrode of described second controlling switch connects described sensing
Electrode.
13. capacitance-type sensing devices according to claim 12 it is characterised in that：Described first data wire is used for transmitting institute
State pumping signal and described second reference signal, described second data wire is used for transmitting described first reference signal, described scanning
Drive circuit provides scanning open signal to the first controlling switch and the second control by described first scan line, the second scan line
Switch, to control the first controlling switch and the conducting of the second controlling switch, to be provided and swept by described first scan line, the second scan line
Retouch pick-off signal to the first controlling switch and the second controlling switch, to control the first controlling switch and the cut-off of the second controlling switch.
14. capacitance-type sensing devices according to claim 13 it is characterised in that：Described capacitance-type sensing device is further
Including：
First reference signal line, connects described reference signal generation circuit and the second data wire, for transmitting described first reference
Signal；Second reference signal line, connects described reference signal generation circuit and the plurality of data selector, described for transmitting
Second reference signal；With
Sensing signal line, connects described sensing drive circuit and the plurality of data selector, for transmitting described pumping signal
Give sensing drive circuit to sensing electrode and transmission from the sensing signal of sensing electrode.
15. capacitance-type sensing devices according to claim 14 it is characterised in that：Described capacitance-type sensing device includes electricity
Capacity sensor, described capacitance type sensor include insulated substrate, the plurality of sensing unit, the plurality of scan line group,
The plurality of data wire group and described first reference signal line, the plurality of sensing unit, the plurality of scan line group,
The plurality of data wire group and described first reference signal line are formed on described insulated substrate.
16. capacitance-type sensing devices according to claim 15 it is characterised in that：The first control in described each sensing unit
System switch and the second controlling switch are thin film transistor switch, and described insulated substrate is glass substrate.
17. capacitance-type sensing devices according to claim 1 it is characterised in that：Described sensing unit includes one first control
System switch and one second controlling switch, or, described sensing unit includes 2 first controlling switches being connected in parallel and is connected in parallel
2 second controlling switches.
18. capacitance-type sensing devices according to claim 15 it is characterised in that：Described insulated substrate includes first surface
And the second surface being oppositely arranged with first surface, described first surface is used for receiving the touch of target object or close to input,
The plurality of sensing unit, the plurality of scan line group, the plurality of data wire group and described first reference signal line set
Put in described second surface.
19. capacitance-type sensing devices according to claim 18 it is characterised in that：The sensing electricity of the plurality of sensing unit
Pole is compared to described first controlling switch, described second controlling switch, the plurality of scan line group and the plurality of data wire
Group is closer to described second surface.
20. capacitance-type sensing device described in 18 is wanted according to right it is characterised in that：Described first controlling switch, described second
Controlling switch, the plurality of scan line group and the plurality of data wire group are located at the sensing electricity of the plurality of sensing unit
Pole is back to the side of described insulated substrate.
21. capacitance-type sensing devices according to claim 18 it is characterised in that：The sensing electricity of the plurality of sensing unit
Pole covers described first controlling switch, described second controlling switch, the plurality of scan line group and the plurality of data line-group
Group.
22. capacitance-type sensing devices according to claim 18 it is characterised in that：Described capacitance type sensor wraps further
Include described scan drive circuit, the plurality of data selector, described second reference signal line and described sensing signal line, institute
State scan drive circuit, the plurality of data selector, described second reference signal line and described sensing signal line and be formed at institute
State on the second surface of insulated substrate.
23. capacitance-type sensing devices according to claim 22 it is characterised in that：Described scan drive circuit, described many
Individual data selector, described second reference signal line and described sensing signal line are arranged on around the plurality of sensing unit.
24. capacitance-type sensing devices according to claim 22 it is characterised in that：Described scan drive circuit and described many
Individual data selector all includes controlling switch, and described controlling switch is thin film transistor switch.
25. capacitance-type sensing devices according to claim 9 it is characterised in that：Each data selector includes multiple opening
Close unit, each switch element includes first choice switch and the second selecting switch, described first choice switch includes controlling electricity
Pole, the first transmission electrode and the second transmission electrode, described second selecting switch includes coordination electrode, the first transmission electrode and
Two transmission electrodes, wherein, coordination electrode and the coordination electrode of the second selecting switch and described control that described first choice switchs
Unit connects respectively, and the first transmission electrode of described first choice switch is connected with described sensing drive circuit, described second choosing
The first transmission electrode selecting switch is connected with described reference signal generation circuit, the second transmission electrode of described first choice switch
It is connected with the second transmission electrode of described second selecting switch and connect to the first data wire.
26. capacitance-type sensing devices according to claim 25 it is characterised in that：Described control unit controls same switch
First choice switch in unit and the second selecting switch timesharing conducting.
27. capacitance-type sensing devices according to claim 18 it is characterised in that：Described capacitance type sensor wraps further
Include passivation layer, be formed at the plurality of sensing unit, the plurality of scan line group, the plurality of data wire group and described
On first reference signal line.
28. capacitance-type sensing devices according to claim 27 it is characterised in that：Described capacitance-type sensing device is further
Including control chip, described control chip includes described control unit, described reference signal generation circuit and described sensing and drives
Circuit.
29. capacitance-type sensing devices according to claim 28 it is characterised in that：Described capacitance type sensor and described control
Coremaking piece is respectively nude film, and described control chip is bundled on described insulated substrate；Or, it is soft that described control chip is arranged on one
On property circuit board, electrically connected with described capacitance type sensor by described flexible circuit board.
30. capacitance-type sensing devices according to claim 6 it is characterised in that：Described drive circuit further includes to adjust
Circuit processed, described modulation circuit exports to the signal of the plurality of sensing unit for drive circuit described in uniform modulation, to carry
The signal to noise ratio of high sensing signal.
31. capacitance-type sensing devices according to claim 1 it is characterised in that：Described capacitance-type sensing device is fingerprint
Sensing device.
32. a kind of electronic equipments, including the capacitance-type sensing device described in any one in claim 1-31.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2016/094245 WO2018027594A1 (en) | 2016-08-09 | 2016-08-09 | Capacitive sensing device and electronic apparatus |
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| CN106462308B CN106462308B (en) | 2019-11-29 |
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| CN106462308B (en) | 2019-11-29 |
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