CN106458600B - 制造石墨烯层的方法 - Google Patents

制造石墨烯层的方法 Download PDF

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CN106458600B
CN106458600B CN201580017914.1A CN201580017914A CN106458600B CN 106458600 B CN106458600 B CN 106458600B CN 201580017914 A CN201580017914 A CN 201580017914A CN 106458600 B CN106458600 B CN 106458600B
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layer
graphene
graphene oxide
heating
laser
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CN106458600A (zh
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A.J.M.吉伊斯伯斯
A.R.巴肯恩德
L.范德坦佩
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Koninklijke Philips NV
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/19—Preparation by exfoliation
    • C01B32/192—Preparation by exfoliation starting from graphitic oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201580017914.1A 2014-04-04 2015-03-26 制造石墨烯层的方法 Expired - Fee Related CN106458600B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14163503.7 2014-04-04
EP14163503 2014-04-04
PCT/EP2015/056481 WO2015150198A1 (en) 2014-04-04 2015-03-26 A method of producing a graphene layer

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CN106458600A CN106458600A (zh) 2017-02-22
CN106458600B true CN106458600B (zh) 2020-01-21

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US (1) US20170018712A1 (enExample)
EP (1) EP3127175A1 (enExample)
JP (1) JP6688225B2 (enExample)
CN (1) CN106458600B (enExample)
WO (1) WO2015150198A1 (enExample)

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KR102608091B1 (ko) * 2016-10-07 2023-12-04 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN107244669B (zh) * 2017-06-14 2020-12-25 南开大学 一种激光诱导石墨烯微纳结构的加工方法及其系统
CN107416799A (zh) * 2017-07-31 2017-12-01 江苏大学 一种提高石墨烯制备效率的装置与方法
KR102426898B1 (ko) * 2018-01-04 2022-07-28 한국전기연구원 광소결을 통해 질소가 도핑된 산화그래핀 환원물 및 그 제조방법
RU2697471C1 (ru) * 2018-12-28 2019-08-14 федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технический университет имени Н.Э. Баумана (национальный исследовательский университет)" (МГТУ им. Н.Э. Баумана) Способ локального контролируемого восстановления оксида графена для сенсорных применений
CN109713169B (zh) * 2019-02-19 2021-10-22 合肥京东方光电科技有限公司 阵列基板及制作方法、显示面板
CN110364519B (zh) * 2019-08-07 2024-04-23 江苏欧密格光电科技股份有限公司 光电耦合器、制作方法及其使用方法
CN110723725B (zh) * 2019-11-04 2021-08-10 中国科学院福建物质结构研究所 一种低功率激光还原石墨烯膜及其制备方法
CN110723726B (zh) * 2019-11-04 2021-08-10 中国科学院福建物质结构研究所 一种激光还原石墨烯膜及其制备方法
KR102401334B1 (ko) * 2019-11-14 2022-05-25 한국과학기술연구원 그래핀과 하이브리드화에 의한 다이아몬드의 밴드갭 제어방법
RU2746728C1 (ru) * 2019-12-31 2021-04-19 федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технический университет имени Н.Э. Баумана (национальный исследовательский университет)" (МГТУ им. Н.Э. Баумана) Способ повышения стабильности и воспроизводимости электрофизических характеристик биологического сенсора

Citations (4)

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CN101723310A (zh) * 2009-12-02 2010-06-09 吉林大学 一种利用氧化石墨烯制备导电微纳结构的光加工方法
CN103077766A (zh) * 2013-02-06 2013-05-01 青岛中科昊泰新材料科技有限公司 一种石墨烯导电薄膜及其在电化学电容器中的应用
CN103236295A (zh) * 2013-04-23 2013-08-07 上海师范大学 一种图案化石墨烯导电薄膜的制备方法
CN103508447A (zh) * 2012-06-26 2014-01-15 海洋王照明科技股份有限公司 石墨烯的制备方法

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CN101474898A (zh) * 2009-01-16 2009-07-08 南开大学 基于石墨烯的导电碳膜及制备方法和应用
US8317984B2 (en) * 2009-04-16 2012-11-27 Northrop Grumman Systems Corporation Graphene oxide deoxygenation
US10164135B2 (en) * 2009-08-07 2018-12-25 Guardian Glass, LLC Electronic device including graphene-based layer(s), and/or method or making the same
US8440999B2 (en) * 2011-02-15 2013-05-14 International Business Machines Corporation Semiconductor chip with graphene based devices in an interconnect structure of the chip
JP6077347B2 (ja) * 2012-04-10 2017-02-08 株式会社半導体エネルギー研究所 非水系二次電池用正極の製造方法

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CN101723310A (zh) * 2009-12-02 2010-06-09 吉林大学 一种利用氧化石墨烯制备导电微纳结构的光加工方法
CN103508447A (zh) * 2012-06-26 2014-01-15 海洋王照明科技股份有限公司 石墨烯的制备方法
CN103077766A (zh) * 2013-02-06 2013-05-01 青岛中科昊泰新材料科技有限公司 一种石墨烯导电薄膜及其在电化学电容器中的应用
CN103236295A (zh) * 2013-04-23 2013-08-07 上海师范大学 一种图案化石墨烯导电薄膜的制备方法

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Laser direct patterning of a reduced-graphene oxide transparent circuit on a graphene oxide thin film;K. C. Yung等;《JOURNAL OF APPLIED PHYSICS》;20130626;第113卷;第244903页 *
Laser induced graphite oxide/grapheme transformation;Romualdas Trusovas等;《Journal of Laser Micro/Nanoengineering》;20120201;第7卷(第1期);第49-53页 *
Romualdas Trusovas等.Laser induced graphite oxide/grapheme transformation.《Journal of Laser Micro/Nanoengineering》.2012,第7卷(第1期),第49-53页. *

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Publication number Publication date
JP2017519703A (ja) 2017-07-20
JP6688225B2 (ja) 2020-04-28
EP3127175A1 (en) 2017-02-08
CN106458600A (zh) 2017-02-22
US20170018712A1 (en) 2017-01-19
WO2015150198A1 (en) 2015-10-08

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