CN106455349B - 一种基于磁控溅镀技术的印制线路板制备方法 - Google Patents
一种基于磁控溅镀技术的印制线路板制备方法 Download PDFInfo
- Publication number
- CN106455349B CN106455349B CN201610645019.0A CN201610645019A CN106455349B CN 106455349 B CN106455349 B CN 106455349B CN 201610645019 A CN201610645019 A CN 201610645019A CN 106455349 B CN106455349 B CN 106455349B
- Authority
- CN
- China
- Prior art keywords
- magnetic
- plating
- insulating body
- magnetic control
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007747 plating Methods 0.000 title claims abstract description 198
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 49
- 238000005516 engineering process Methods 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 127
- 239000002184 metal Substances 0.000 claims abstract description 127
- 238000003475 lamination Methods 0.000 claims description 108
- 238000002203 pretreatment Methods 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 60
- 239000007789 gas Substances 0.000 claims description 57
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 56
- 238000000926 separation method Methods 0.000 claims description 50
- 238000009740 moulding (composite fabrication) Methods 0.000 claims description 41
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 33
- 229910052786 argon Inorganic materials 0.000 claims description 28
- 239000002994 raw material Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 230000004913 activation Effects 0.000 claims description 20
- 238000012360 testing method Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 238000009713 electroplating Methods 0.000 claims description 16
- 238000004080 punching Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000005553 drilling Methods 0.000 claims description 15
- 238000000465 moulding Methods 0.000 claims description 15
- 239000001509 sodium citrate Substances 0.000 claims description 15
- 235000011083 sodium citrates Nutrition 0.000 claims description 15
- 229910000679 solder Inorganic materials 0.000 claims description 15
- 229910001220 stainless steel Inorganic materials 0.000 claims description 15
- 239000010935 stainless steel Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 14
- 229910021641 deionized water Inorganic materials 0.000 claims description 14
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 14
- 229940125717 barbiturate Drugs 0.000 claims description 13
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 13
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 13
- 239000004800 polyvinyl chloride Substances 0.000 claims description 13
- DVECLMOWYVDJRM-UHFFFAOYSA-N pyridine-3-sulfonic acid Chemical class OS(=O)(=O)C1=CC=CN=C1 DVECLMOWYVDJRM-UHFFFAOYSA-N 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical class [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 claims description 13
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical class [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- FRTNIYVUDIHXPG-UHFFFAOYSA-N acetic acid;ethane-1,2-diamine Chemical class CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCN FRTNIYVUDIHXPG-UHFFFAOYSA-N 0.000 claims description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims 2
- 150000002460 imidazoles Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000002351 wastewater Substances 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 238000007689 inspection Methods 0.000 description 15
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 description 12
- 150000001412 amines Chemical class 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229960001484 edetic acid Drugs 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002462 imidazolines Chemical class 0.000 description 3
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 3
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000002195 synergetic effect Effects 0.000 description 3
- LWTIGYSPAXKMDG-UHFFFAOYSA-N 2,3-dihydro-1h-imidazole Chemical compound C1NC=CN1 LWTIGYSPAXKMDG-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- HNYOPLTXPVRDBG-UHFFFAOYSA-N barbituric acid Chemical compound O=C1CC(=O)NC(=O)N1 HNYOPLTXPVRDBG-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- FFMBYMANYCDCMK-UHFFFAOYSA-N 2,5-dihydro-1h-imidazole Chemical compound C1NCN=C1 FFMBYMANYCDCMK-UHFFFAOYSA-N 0.000 description 1
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- GQDHEYWVLBJKBA-UHFFFAOYSA-H copper(ii) phosphate Chemical compound [Cu+2].[Cu+2].[Cu+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GQDHEYWVLBJKBA-UHFFFAOYSA-H 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 150000002171 ethylene diamines Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000007885 magnetic separation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000005649 metathesis reaction Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- QDRKDTQENPPHOJ-UHFFFAOYSA-N sodium ethoxide Chemical compound [Na+].CC[O-] QDRKDTQENPPHOJ-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrochemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610645019.0A CN106455349B (zh) | 2016-08-06 | 2016-08-06 | 一种基于磁控溅镀技术的印制线路板制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610645019.0A CN106455349B (zh) | 2016-08-06 | 2016-08-06 | 一种基于磁控溅镀技术的印制线路板制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106455349A CN106455349A (zh) | 2017-02-22 |
CN106455349B true CN106455349B (zh) | 2019-01-22 |
Family
ID=58184813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610645019.0A Active CN106455349B (zh) | 2016-08-06 | 2016-08-06 | 一种基于磁控溅镀技术的印制线路板制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106455349B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106455349B (zh) * | 2016-08-06 | 2019-01-22 | 深圳市博敏电子有限公司 | 一种基于磁控溅镀技术的印制线路板制备方法 |
CN110565056B (zh) * | 2019-09-19 | 2021-03-30 | 广东工业大学 | 一种5g金属/陶瓷复合电路板及其制备方法 |
CN115925449B (zh) * | 2022-12-30 | 2023-11-07 | 浙江朗德电子科技有限公司 | 一种尾气传感器芯片用功能电极的制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1335743A (zh) * | 2000-07-26 | 2002-02-13 | 赵远涛 | 制作印刷线路板的工艺方法 |
JP2002111176A (ja) * | 2000-09-26 | 2002-04-12 | Rohm Co Ltd | 導電路の形成方法および基板 |
CN102378939A (zh) * | 2009-03-31 | 2012-03-14 | 琳得科株式会社 | 掩膜用部件、使用该部件制造掩膜的方法及感光性树脂印刷版的制造方法 |
CN103806033A (zh) * | 2012-11-12 | 2014-05-21 | 无锡三洲冷轧硅钢有限公司 | 一种锌压铸件表面电镀金属层的方法 |
CN103906362A (zh) * | 2014-02-28 | 2014-07-02 | 双鸿电子(惠州)有限公司 | 一种手机电容屏挠性印制板的制作方法 |
CN106455349A (zh) * | 2016-08-06 | 2017-02-22 | 深圳市博敏电子有限公司 | 一种基于磁控溅镀技术的印制线路板制备方法 |
-
2016
- 2016-08-06 CN CN201610645019.0A patent/CN106455349B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1335743A (zh) * | 2000-07-26 | 2002-02-13 | 赵远涛 | 制作印刷线路板的工艺方法 |
JP2002111176A (ja) * | 2000-09-26 | 2002-04-12 | Rohm Co Ltd | 導電路の形成方法および基板 |
CN102378939A (zh) * | 2009-03-31 | 2012-03-14 | 琳得科株式会社 | 掩膜用部件、使用该部件制造掩膜的方法及感光性树脂印刷版的制造方法 |
CN103806033A (zh) * | 2012-11-12 | 2014-05-21 | 无锡三洲冷轧硅钢有限公司 | 一种锌压铸件表面电镀金属层的方法 |
CN103906362A (zh) * | 2014-02-28 | 2014-07-02 | 双鸿电子(惠州)有限公司 | 一种手机电容屏挠性印制板的制作方法 |
CN106455349A (zh) * | 2016-08-06 | 2017-02-22 | 深圳市博敏电子有限公司 | 一种基于磁控溅镀技术的印制线路板制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106455349A (zh) | 2017-02-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102480377B1 (ko) | 조화 처리 구리박, 캐리어 구비 구리박, 동장 적층판 및 프린트 배선판 | |
CN106455349B (zh) | 一种基于磁控溅镀技术的印制线路板制备方法 | |
TWI623248B (zh) | 附載體銅箔、積層體、印刷配線板、電子機器及印刷配線板之製造方法 | |
CN107708315B (zh) | 一种镶嵌陶瓷的散热线路板及其制备方法 | |
JP5275701B2 (ja) | プリント配線基板用アルミニウム材及びその製造方法 | |
CN102555333B (zh) | 复合金属箔、其制造方法以及印刷布线板 | |
WO2007091976A1 (en) | Anodised aluminium, dielectric, and method | |
JPS62276894A (ja) | スル−ホ−ル付導体回路板の製造方法 | |
CN101892499A (zh) | 以铜箔作载体的可剥离超薄铜箔及其制备方法 | |
JPS6030751B2 (ja) | 薄い銅ホイルを製造する方法 | |
CN106231807B (zh) | 一种基于磁控溅射技术的印制线路板线路图形制作方法 | |
JPH0255943B2 (zh) | ||
JP5505828B2 (ja) | 複合金属箔及びその製造方法 | |
TW201900410A (zh) | 粗糙化處理銅箔,附載體銅箔,銅箔層積板及印刷配線板 | |
CN102756515B (zh) | 一种陶瓷覆铝基板及其制备方法 | |
JP2013503965A (ja) | 微細回路の形成のためのエンベデッド用銅箔 | |
JP2014156629A (ja) | 銅または銅合金用エッチング液およびこれを用いた銅または銅合金のエッチング方法 | |
JP2008004862A (ja) | プリント配線板及びその製造方法 | |
JP2014208484A (ja) | キャリア付銅箔、プリント配線板、銅張積層板、電子機器及びプリント配線板の製造方法 | |
WO2012046841A1 (ja) | プリント配線板の製造方法及びそのプリント配線板の製造方法を用いて得られたプリント配線板 | |
TW201710077A (zh) | 帶載體超薄銅箔,及其製造方法,銅張積層板及印刷配線板 | |
TW200922423A (en) | Manufacturing method of wiring board | |
JP2014208909A (ja) | キャリア付銅箔、プリント配線板、銅張積層板、電子機器及びプリント配線板の製造方法 | |
JP2014208481A (ja) | キャリア付銅箔、プリント配線板、銅張積層板、電子機器及びプリント配線板の製造方法 | |
CN103429009A (zh) | 一种含金属铝层的印刷电路板制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A preparation method of printed circuit board based on magnetron sputtering technology Effective date of registration: 20211213 Granted publication date: 20190122 Pledgee: Shenzhen hi tech investment small loan Co.,Ltd. Pledgor: SHENZHEN BOMIN ELECTRONIC Co.,Ltd. Registration number: Y2021980014873 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20231229 Granted publication date: 20190122 Pledgee: Shenzhen hi tech investment small loan Co.,Ltd. Pledgor: SHENZHEN BOMIN ELECTRONIC Co.,Ltd. Registration number: Y2021980014873 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |