CN106449868A - Diffusion method of solar cell silicon chip - Google Patents
Diffusion method of solar cell silicon chip Download PDFInfo
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- CN106449868A CN106449868A CN201610791014.9A CN201610791014A CN106449868A CN 106449868 A CN106449868 A CN 106449868A CN 201610791014 A CN201610791014 A CN 201610791014A CN 106449868 A CN106449868 A CN 106449868A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 16
- 230000003647 oxidation Effects 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 358
- 229910052757 nitrogen Inorganic materials 0.000 claims description 179
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 86
- 239000001301 oxygen Substances 0.000 claims description 86
- 229910052760 oxygen Inorganic materials 0.000 claims description 86
- 239000012467 final product Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 125000004437 phosphorous atom Chemical group 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
Provided is a diffusion method of a solar cell silicon chip. The silicon chip is arranged in a diffusion furnace, the diffusion furnace is provided with five temperature areas, the five temperature areas comprise temperature I, temperature II, temperature III, temperature IV, and temperature V, and the five temperature areas are distributed along the height direction. A control method of the diffusion furnace includes following steps: (1) starting; (2) boat-in; (3) heating; (4) pre-oxidation; (5) diffusion; (6) first push; (7) second push; (8) third push; (9) post-oxidation; (10) constant temperature; (11) boat-out; (12) finishing; and (13) cooling so that the chip is discharged. Compared with the prior art, the method is advantageous in that the uniformity of processed PN junctions is good, and the performance stability of the product is good.
Description
Technical field
The invention belongs to solaode preparing technical field, more particularly to a kind of diffused sheet of silicon chip of solar cell
Method.
Background technology
The production technology of solar battery sheet is more complicated, in brief, the production process of current solar battery sheet
Mainly include：Making herbs into wool, diffusion, etching, plated film, printing and sintering etc..And PN junction is the equal of the heart of solar battery sheet,
It is one of key of battery quality quality, therefore, diffusion is an important step for making solar battery sheet.
Diffusion makes the committed step that PN junction is manufacture of solar cells, and the quality of PN junction then directly decides solar-electricity
The conversion efficiency in pond.In existing method of diffusion, deposited in the nitrogen being passed through in diffusion furnace containing phosphorus oxychloride and oxygen
Afterwards, diffusion in-furnace temperature being risen to uniform temperature, while the diffusion of oxygen one-step knot phosphorus is passed through into diffusion furnace, continues one section
Directly diffusion furnace is lowered the temperature after time, until completing diffusion technique.
Reduce surface dopant concentration, most common method is to reduce the flux of phosphorus source, but this method is expanding can phosphorus source
Mix not enough abundant in scattered gas, in turn result in after diffusion sheet resistance in silicon chip uneven；Simultaneously as phosphorus source content is few, so
The concentration difference of the phosphorus source air inlet of diffusion furnace and air vent phosphorus source is larger to a great extent, and this concentration difference can cause diffusion
Between silicon chip piece there is larger difference in sheet resistance, i.e., between piece, sheet resistance uniformity is deteriorated.Further, since phosphorus source concentration is less, ensureing institute
On the premise of needing doping enough, need to increase the diffusion technique time or improve diffusion temperature；And in the case of low-phosphorous source,
High temperature diffusion will have influence on the uniformity of sheet resistance further.
But the uniformity of the silicon chip PN junction of prior art production is poor, causes the stability of product poor.
Content of the invention
The present invention provides a kind of preferable and so that stable performance of product of uniformity of PN junction after process for problem above
The method of diffusion of the preferable silicon chip of solar cell of property.
The present invention solves the technical scheme used by problem above：A kind of method of diffusion of silicon chip of solar cell is provided,
First silicon chip is placed in diffusion furnace, the diffusion furnace is provided with five warm areas, five warm areas are respectively temperature I, temperature II, temperature
IIIth, temperature IV and temperature V, and five warm areas are along short transverse respectively, the control method of the diffusion furnace is comprised the following steps：
(1) start：Time is 25～45s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen
Flow is 8000～12000SCCM, and the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1000～2000Pa；
(2) enter boat：Time is 600～800s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, greatly
Nitrogen flow is 4500～8000SCCM, and the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1000～2000Pa；
(3) heat up：Time is 500～700s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, greatly
The flow of nitrogen, little nitrogen and oxygen is 0SCCM, and pressure is 180～300Pa；
(4) oxidation before：Time is 250～450s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical,
It is 0SCCM that big nitrogen flow is 400～600SCCM, little nitrogen flow, oxygen flow be 400～800SCCM, pressure be 180～
300Pa；
(5) spread：Time is 480～580s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, greatly
Nitrogen flow is 500～900SCCM, and it is 100～500SCCM that little nitrogen flow is 100～240SCCM, oxygen flow, and pressure is 180
～300Pa；
(6) first time knot：Time is 100～200s, and temperature setting is 770～790 DEG C, and the temperature phase of five warm areas
With big nitrogen flow is that 200～600SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 20～80Pa；
(7) second knot：Time is 400～800s, and temperature setting is 800～840 DEG C, and the temperature phase of five warm areas
With big nitrogen flow is that 1500～2500SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 100～300Pa；
(8) third time knot：Time is 500～600s, and temperature I is set to 820～860 DEG C, and the temperature of temperature II is than temperature
The temperature of degree I is high 2～4 DEG C, and temperature III is identical with the temperature of temperature I, and the temperature of temperature IV is lower than the temperature of temperature I 8～12 DEG C,
Temperature V is identical with the temperature of temperature IV, and big nitrogen flow is that 1500～2500SCCM, little nitrogen and oxygen flow are 0SCCM, pressure
Power is 100～300Pa；
(9) rear oxidation：Time is 600～1000s, and temperature setting is 700～780 DEG C, and the temperature of five warm areas is identical,
It is 0SCCM that big nitrogen flow is 800～1200SCCM, little nitrogen flow, and oxygen flow is 800～1200SCCM；
(10) constant temperature：Time is 100～140s, and temperature is identical with the setting in step (9), big nitrogen flow is 8000～
12000SCCM, little nitrogen and oxygen flow are 0SCCM；
(11) go out boat：Time is 1000～1400s, and temperature is identical with the setting in step (9), big nitrogen flow is 4500～
8000SCCM, little nitrogen and oxygen flow are 0SCCM；
(12) terminate：Time is 5～15s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen
Flow is 4500～8000SCCM, and the flow of little nitrogen and oxygen is 0SCCM；
(13) cool down：Above-mentioned silicon chip is cooled to room temperature, obtains final product required silicon chip.
Preferably, the temperature of step (1) is 780 DEG C.
Preferably, the temperature of step (2)～step (6) is all identical with the temperature of step (1).
Preferably, the pressure of step (3)～step (5) is identical, the pressure of step (7)～step (9) is identical, step
Suddenly the pressure of (10)～step (12) is identical, and the pressure of pressure and step (7) and step (10) of the step (3) with step (7)
All differ.
Preferably, the big nitrogen flow of step (1) is identical with the big nitrogen flow of step (10).
Preferably, the big nitrogen flow of the big nitrogen flow of the big nitrogen flow of step (2), step (11) and step (12)
All same.
After above method, compared with prior art, the invention has the advantages that：
Due to spreading by one, the method for three knots, i.e., at a temperature of less than 600 DEG C, deposit and spread is preparing low concentration
Doped layer, then carry out three knots, respectively first low temperature (identical with diffusion temperature) knot, then constant temperature knot after heating up, most
It is warmed up to high temperature (and the warm area of high temperature also point different temperatures so that phosphorus atoms diffusion is more enlivened) knot afterwards, is high temperature knot
Temperature drops to 780 DEG C and less afterwards, and phosphorus atoms can be made to be spread from silicon chip to oxide layer, that is, realize contrary with hot conditionss
Reverse diffusion, having diffused into the phosphorus atoms of silicon chip, the particularly phosphorus atoms of silicon chip most surface layer will move to oxide layer, and
Reduce impurities on surface of silicon chip concentration, so can not only increase PN junction depth and the uniformity, can also increase the concentration of surface phosphorus
While increase junction depth, to form good Ohmic contact with metal grid lines, (compared with the silicon chip of prior art, sheet resistance will height
6 Ω/～12 Ω/), strengthen the blue response of battery so that the stability in use of product is preferable.
Specific embodiment
Below in conjunction with specific embodiment, the present invention is described further.
Embodiment one
A kind of method of diffusion of silicon chip of solar cell, is first placed on silicon chip in diffusion furnace, and the diffusion furnace is provided with five
Individual warm area, five warm areas are respectively temperature I, temperature II, temperature III, temperature IV and temperature V, and five warm areas are along short transverse
Respectively, the control method of the diffusion furnace is comprised the following steps：
(1) start：Time is 25s, and temperature setting is 790 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
12000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 2000Pa；
(2) enter boat：Time is 600s, and temperature setting is 790 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
8000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 2000Pa；
(3) heat up：Time is 500s, and temperature setting is 790 DEG C, and the temperature of five warm areas is identical, big nitrogen, little nitrogen and oxygen
The flow of gas is 0SCCM, and pressure is 300Pa；
(4) oxidation before：Time is 250s, and temperature setting is 790 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
600SCCM, it is 800SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 300Pa；
(5) spread：Time is 480s, and temperature setting is 790 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
900SCCM, it is 500SCCM that little nitrogen flow is 240SCCM, oxygen flow, and pressure is 300Pa；
(6) first time knot：Time is 100s, and temperature setting is 790 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 600SCCM, little nitrogen and oxygen flow are 0SCCM, pressure be；
(7) second knot：Time is 400s, and temperature setting is 840 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 2500SCCM, little nitrogen and oxygen flow are 0SCCM, pressure be；
(8) third time knot：Time is 500s, and temperature I is set to 860 DEG C, and the temperature of temperature II is higher than the temperature of temperature I
4 DEG C, temperature III is identical with the temperature of temperature I, and the temperature of temperature IV is lower than the temperature of temperature I 8 DEG C, the temperature of temperature V and temperature IV
Degree is identical, and big nitrogen flow is that 2500SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 300Pa；
(9) rear oxidation：Time is 600s, and temperature setting is 780 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
1200SCCM, it is 1200SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 300Pa；
(10) constant temperature：Time is 100s, and temperature is identical with the setting in step (9), and big nitrogen flow is 12000SCCM, little
Nitrogen and oxygen flow are 0SCCM, and pressure is 2000Pa；
(11) go out boat：Time is 1000s, and temperature is identical with the setting in step (9), and big nitrogen flow is 8000SCCM, little
Nitrogen and oxygen flow are 0SCCM, and pressure is 2000Pa；
(12) terminate：Time is 5s, and temperature setting is 790 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
8000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 2000Pa；
(13) cool down：Above-mentioned silicon chip is cooled to room temperature, obtains final product required silicon chip.
Embodiment two
A kind of method of diffusion of silicon chip of solar cell, is first placed on silicon chip in diffusion furnace, and the diffusion furnace is provided with five
Individual warm area, five warm areas are respectively temperature I, temperature II, temperature III, temperature IV and temperature V, and five warm areas are along short transverse
Respectively, the control method of the diffusion furnace is comprised the following steps：
(1) start：Time is 45s, and temperature setting is 770 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
8000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1000Pa；
(2) enter boat：Time is 800s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen flow
For 4500～8000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1000Pa；
(3) heat up：Time is 700s, and temperature setting is 770 DEG C, and the temperature of five warm areas is identical, big nitrogen, little nitrogen and oxygen
The flow of gas is 0SCCM, and pressure is 180Pa；
(4) oxidation before：Time is 450s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 400～600SCCM, it is 400SCCM that little nitrogen flow is 0SCCM, oxygen flow, pressure be；
(5) spread：Time is 580s, and temperature setting is 770 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is 500
～900SCCM, it is 100SCCM that little nitrogen flow is 100SCCM, oxygen flow, and pressure is 180Pa；
(6) first time knot：Time is 200s, and temperature setting is 770 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 200SCCM, little nitrogen and oxygen flow are 0SCCM, pressure be；
(7) second knot：Time is 800s, and temperature setting is 800 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 1500～2500SCCM, little nitrogen and oxygen flow are 0SCCM, pressure be；
(8) third time knot：Time is 600s, and temperature I is set to 820 DEG C, and the temperature of temperature II is higher than the temperature of temperature I
2 DEG C, temperature III is identical with the temperature of temperature I, and the temperature of temperature IV is lower than the temperature of temperature I 12 DEG C, temperature V and temperature IV
Temperature is identical, and big nitrogen flow is that 1500SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 100Pa；
(9) rear oxidation：Time is 1000s, and temperature setting is 700～780 DEG C, and the temperature of five warm areas is identical, big nitrogen
Flow is 800SCCM, and it is 800SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 100Pa；
(10) constant temperature：Time is 140s, and temperature is identical with the setting in step (9), and big nitrogen flow is 8000SCCM, little nitrogen
0SCCM is with oxygen flow, pressure is 1000Pa；
(11) go out boat：Time is 1400s, and temperature is identical with the setting in step (9), and big nitrogen flow is 4500SCCM, little
Nitrogen and oxygen flow are 0SCCM, and pressure is 1000Pa；
(12) terminate：Time is 15s, and temperature setting is 770 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
4500SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1000Pa；
(13) cool down：Above-mentioned silicon chip is cooled to room temperature, obtains final product required silicon chip.
Embodiment three
A kind of method of diffusion of silicon chip of solar cell, is first placed on silicon chip in diffusion furnace, and the diffusion furnace is provided with five
Individual warm area, five warm areas are respectively temperature I, temperature II, temperature III, temperature IV and temperature V, and five warm areas are along short transverse
Respectively, the control method of the diffusion furnace is comprised the following steps：
(1) start：Time is 35s, and temperature setting is 780 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
11000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1500Pa；
(2) enter boat：Time is 700s, and temperature setting is 780 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
6000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1500Pa；
(3) heat up：Time is 600s, and temperature setting is 780 DEG C, and the temperature of five warm areas is identical, big nitrogen, little nitrogen and oxygen
The flow of gas is 0SCCM, and pressure is 260Pa；
(4) oxidation before：Time is 320s, and temperature setting is 780 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
500SCCM, it is 600SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 260Pa；
(5) spread：Time is 540s, and temperature setting is 780 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is 500
～900SCCM, it is 300SCCM that little nitrogen flow is 170SCCM, oxygen flow, and pressure is 260Pa；
(6) first time knot：Time is 150s, and temperature setting is 780 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 400SCCM, little nitrogen and oxygen flow are 0SCCM, pressure be；
(7) second knot：Time is 600s, and temperature setting is 820 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 1900SCCM, little nitrogen and oxygen flow are 0SCCM, pressure be；
(8) third time knot：Time is 550s, and temperature I is set to 840 DEG C, and the temperature of temperature II is higher than the temperature of temperature I
3 DEG C, temperature III is identical with the temperature of temperature I, and the temperature of temperature IV is lower than the temperature of temperature I 10 DEG C, temperature V and temperature IV
Temperature is identical, and big nitrogen flow is that 2000SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 200Pa；
(9) rear oxidation：Time is 800s, and temperature setting is 740 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
900SCCM, it is 1000SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 200Pa；
(10) constant temperature：Time is 120s, and temperature is identical with the setting in step (9), and big nitrogen flow is 11000SCCM, little
Nitrogen and oxygen flow are 0SCCM, and pressure is 1500Pa；
(11) go out boat：Time is 1200s, and temperature is identical with the setting in step (9), and big nitrogen flow is 6000SCCM, little
Nitrogen and oxygen flow are 0SCCM, and pressure is 1500Pa；
(12) terminate：Time is 5～15s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen
Flow is 6000SCCM, and the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1500Pa；
(13) cool down：Above-mentioned silicon chip is cooled to room temperature, obtains final product required silicon chip.
Example IV
A kind of method of diffusion of silicon chip of solar cell, is first placed on silicon chip in diffusion furnace, and the diffusion furnace is provided with five
Individual warm area, five warm areas are respectively temperature I, temperature II, temperature III, temperature IV and temperature V, and five warm areas are along short transverse
Respectively, the control method of the diffusion furnace is comprised the following steps：
(1) start：Time is 35s, and temperature setting is 785 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
9000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1700Pa；
(2) enter boat：Time is 750s, and temperature setting is 785 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
7000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1700Pa；
(3) heat up：Time is 650s, and temperature setting is 785 DEG C, and the temperature of five warm areas is identical, big nitrogen, little nitrogen and oxygen
The flow of gas is 0SCCM, and pressure is 200Pa；
(4) oxidation before：Time is 400s, and temperature setting is 785 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
500SCCM, it is 500SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 200Pa；
(5) spread：Time is 500s, and temperature setting is 785 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
800SCCM, it is 400SCCM that little nitrogen flow is 180SCCM, oxygen flow, and pressure is 200Pa；
(6) first time knot：Time is 180s, and temperature setting is 785 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 500SCCM, little nitrogen and oxygen flow are 0SCCM, pressure be；
(7) second knot：Time is 700s, and temperature setting is 830 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 2200SCCM, little nitrogen and oxygen flow are 0SCCM, pressure be；
(8) third time knot：Time is 580s, and temperature I is set to 850 DEG C, and the temperature of temperature II is higher than the temperature of temperature I
3 DEG C, temperature III is identical with the temperature of temperature I, and the temperature of temperature IV is lower than the temperature of temperature I 11 DEG C, temperature V and temperature IV
Temperature is identical, and big nitrogen flow is that 2200SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 180Pa；
(9) rear oxidation：Time is 900s, and temperature setting is 760 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
1100SCCM, it is 1100SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 180Pa；
(10) constant temperature：Time is 130s, and temperature is identical with the setting in step (9), and big nitrogen flow is 9000SCCM, little nitrogen
0SCCM is with oxygen flow, pressure is 1700Pa；
(11) go out boat：Time is 1300s, and temperature is identical with the setting in step (9), and big nitrogen flow is 7000SCCM, little
Nitrogen and oxygen flow are 0SCCM, and pressure is 1700Pa；
(12) terminate：Time is 5～15s, and temperature setting is 785 DEG C DEG C, and the temperature of five warm areas is identical, big nitrogen flow
For 7000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1700Pa；
(13) cool down：Above-mentioned silicon chip is cooled to room temperature, obtains final product required silicon chip.
Embodiment five
A kind of method of diffusion of silicon chip of solar cell, is first placed on silicon chip in diffusion furnace, and the diffusion furnace is provided with five
Individual warm area, five warm areas are respectively temperature I, temperature II, temperature III, temperature IV and temperature V, and five warm areas are along short transverse
Respectively, the control method of the diffusion furnace is comprised the following steps：
(1) start：Time is 27s, and temperature setting is 775 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
8500SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1400Pa；
(2) enter boat：Time is 650s, and temperature setting is 775 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
4800SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1400Pa；
(3) heat up：Time is 550s, and temperature setting is that the temperature of 775 DEG C and five warm areas is identical, big nitrogen, little nitrogen and oxygen
The flow of gas is 0SCCM, and pressure is 200Pa；
(4) oxidation before：Time is 270s, and temperature setting is 775 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
450SCCM, it is 450SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 200Pa；
(5) spread：Time is 490s, and temperature setting is 775 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
600SCCM, it is 200SCCM that little nitrogen flow is 135SCCM, oxygen flow, and pressure is 200Pa；
(6) first time knot：Time is 120s, and temperature setting is 775 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 300SCCM, little nitrogen and oxygen flow are 0SCCM, pressure be；
(7) second knot：Time is 500s, and temperature setting is 810 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 1600SCCM, little nitrogen and oxygen flow are 0SCCM, pressure be；
(8) third time knot：Time is 520s, and temperature I is set to 830 DEG C, and the temperature of temperature II is higher than the temperature of temperature I
3 DEG C, temperature III is identical with the temperature of temperature I, and the temperature of temperature IV is lower than the temperature of temperature I 9 DEG C, the temperature of temperature V and temperature IV
Degree is identical, and big nitrogen flow is that 1600SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 160Pa；
(9) rear oxidation：Time is 700s, and temperature setting is 720 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
900SCCM, it is 900SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 160Pa；
(10) constant temperature：Time is 110s, and temperature is identical with the setting in step (9), and big nitrogen flow is 8500SCCM, little nitrogen
0SCCM is with oxygen flow, pressure is 1400Pa；
(11) go out boat：Time is 1100s, and temperature is identical with the setting in step (9), and big nitrogen flow is 4800SCCM, little
Nitrogen and oxygen flow are 0SCCM, and pressure is 1400Pa；
(12) terminate：Time is 7s, and temperature setting is 775 DEG C, and the temperature of five warm areas is identical, and big nitrogen flow is
4800SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1400Pa；
(13) cool down：Above-mentioned silicon chip is cooled to room temperature, obtains final product required silicon chip.
Above example is only presently preferred embodiments of the present invention, and the present invention is not limited only to above example and also allows for other
Structure change, all in rights to independence claimed range of the present invention change, all belong to the scope of the present invention.
Claims (6)
1. a kind of method of diffusion of silicon chip of solar cell, is first placed on silicon chip in diffusion furnace, it is characterised in that：The diffusion
Stove is provided with five warm areas, and five warm areas are respectively temperature I, temperature II, temperature III, temperature IV and temperature V, and five warm area edges
Respectively, the control method of the diffusion furnace is comprised the following steps short transverse：
(1) start：Time is 25～45s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen flow
For 8000～12000SCCM, the flow of little nitrogen and oxygen is 0SCCM, pressure be；
(2) enter boat：Time is 600～800s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
Measure as 4500～8000SCCM, the flow of little nitrogen and oxygen is 0SCCM, pressure be；
(3) heat up：Time is 500～700s, and temperature setting is that 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen, little
The flow of nitrogen and oxygen is 0SCCM, and pressure is 180～300Pa；
(4) oxidation before：Time is 250～450s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen
Flow is 400～600SCCM, and it is 400～800SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 180～300Pa；
(5) spread：Time is 480～580s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen stream
To measure as 500～900SCCM, it is 100～500SCCM that little nitrogen flow is 100～240SCCM, oxygen flow, pressure is 180～
300Pa；
(6) first time knot：Time is 100～200s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical,
Big nitrogen flow is that 200～600SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 20～80Pa；
(7) second knot：Time is 400～800s, and temperature setting is 800～840 DEG C, and the temperature of five warm areas is identical,
Big nitrogen flow is that 1500～2500SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 100～300Pa；
(8) third time knot：Time is 500～600s, and temperature I is set to 820～860 DEG C, and the temperature of temperature II is than temperature I
Temperature is high 2～4 DEG C, and temperature III is identical with the temperature of temperature I, and the temperature of temperature IV is lower than the temperature of temperature I 8～12 DEG C, temperature
V is identical with the temperature of temperature IV, and big nitrogen flow is that 1500～2500SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is
100～300Pa；
(9) rear oxidation：Time is 600～1000s, and temperature setting is 700～780 DEG C, and the temperature of five warm areas is identical, big nitrogen
Flow is 800～1200SCCM, and it is 800～1200SCCM that little nitrogen flow is 0SCCM, oxygen flow, and pressure is 100～300Pa；
(10) constant temperature：Time is 100～140s, and temperature is identical with the setting in step (9), big nitrogen flow is 8000～
12000SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 1000～2000Pa；
(11) go out boat：Time is 1000～1400s, and temperature is identical with the setting in step (9), big nitrogen flow is 4500～
8000SCCM, little nitrogen and oxygen flow are 0SCCM, and pressure is 1000～2000Pa；
(12) terminate：Time is 5～15s, and temperature setting is 770～790 DEG C, and the temperature of five warm areas is identical, big nitrogen flow
For 4500～8000SCCM, the flow of little nitrogen and oxygen is 0SCCM, and pressure is 1000～2000Pa；
(13) cool down：Above-mentioned silicon chip is cooled to room temperature, obtains final product required silicon chip.
2. the method for diffusion of silicon chip of solar cell according to claim 1, it is characterised in that：The temperature of step (1)
Spend for 780 DEG C.
3. the method for diffusion of silicon chip of solar cell according to claim 1, it is characterised in that：Step (2)～step
Suddenly the temperature of (6) is all identical with the temperature of step (1).
4. the method for diffusion of silicon chip of solar cell according to claim 1, it is characterised in that：Step (3)～step
Suddenly the pressure of (5) is identical, and the pressure of step (7)～step (9) is identical, and the pressure of step (10)～step (12) is identical, and walks
Suddenly the pressure of (3) and step (7) and step (7) are all differed with the pressure of step (10).
5. the method for diffusion of silicon chip of solar cell according to claim 1, it is characterised in that：Step (1) big
Nitrogen flow is identical with the big nitrogen flow of step (10).
6. the method for diffusion of silicon chip of solar cell according to claim 1, it is characterised in that：Step (2) big
The big nitrogen flow all same of nitrogen flow, the big nitrogen flow of step (11) and step (12).
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Denomination of invention: Diffusion method of silicon wafers for solar cells Effective date of registration: 20200909 Granted publication date: 20180105 Pledgee: Industrial and Commercial Bank of China Ninghai sub branch Pledgor: RISEN ENERGY Co.,Ltd. Registration number: Y2020330000676 |
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Denomination of invention: Diffusion method of solar cell silicon wafer Effective date of registration: 20211108 Granted publication date: 20180105 Pledgee: Industrial and Commercial Bank of China Limited Ninghai sub branch Pledgor: Dongfang Risheng new energy Co., Ltd Registration number: Y2021330002172 |