CN106449845A - 一种基于Si/TiOx异质结的双面晶体硅太阳电池 - Google Patents
一种基于Si/TiOx异质结的双面晶体硅太阳电池 Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 34
- 229910003087 TiOx Inorganic materials 0.000 title claims abstract description 23
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 title abstract 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 2
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- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
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- 230000002146 bilateral effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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Abstract
一种基于Si/TiOx异质结的双面晶体硅太阳电池。包括前电极、TiOx层、晶体硅吸收层、p型晶体硅重掺杂层、钝化层、金属栅状电极。其结构从迎光面开始依次为:前电极、TiOx层、晶体硅吸收层、p型晶体硅重掺杂层、钝化层、金属栅状电极。迎光面使用n型掺杂的TiOx与晶体硅形成异质结,而背面使用基于扩散的传统晶体硅制备工艺。TiOx可良好钝化硅片表面且与硅形成良好异质结,有助于增加异质结电池的开路电压和转换效率。背面传统的晶体硅制备工艺可充分利用现有晶体硅太阳电池生产设备。双面结构可充分利用太阳光,增加实际发电量,降低光伏发电成本。
Description
技术领域
本发明属于太阳电池领域,也属于半导体器件领域,涉及硅太阳电池的结构设计。
背景技术
晶体硅太阳电池是一类重要的太阳电池,其产量占据了当前太阳电池总产量的大部分份额。随着工艺的进步,目前基于扩散工艺制备的同质结晶体硅太阳电池其光电转换效率逐渐逼近极限。而异质结太阳电池可以充分利用两种不同半导体之间功函数和能带位置的差异,可以在不增加太阳电池内部载流子复合的前提下增强内建电场强度,从而提高太阳电池的光电转换效率。因此,基于异质结的晶体硅太阳电池有望在效率上超越同质结晶体硅电池而成为未来太阳电池的主流。
目前比较成熟的晶体硅异质结太阳电池是基于非晶硅/晶体硅异质结的HIT电池(典型结构为ITO/α-Si(p)/α-Si(i)/c-Si/α-Si(i)/ α-Si(n)/ITO)。然而,HIT电池的生产工艺和设备与传统硅太阳电池的生产工艺和设备存在较大差异。若从传统晶体硅太阳电池转向HIT太阳电池的生产,当前的生产设备就会被浪费。另外,由于HIT太阳电池生产中需要昂贵的真空设备,同等规模生产线的投资是传统晶体硅太阳电池生产线的数倍。这些在一定程度上阻碍了HIT太阳电池的发展。
实际上,除非晶硅外,还存在其它能有效钝化硅表面并与硅形成优质异质结的材料。另外,晶体硅异质结太阳电池的结构也不仅局限于HIT太阳电池的结构。若能选择合适的材料和器件结构,并使其能适用(或部分适用)于传统的同质结晶体硅太阳电池生产设备,则即能提高晶体硅太阳电池的光电转换效率,又避免对生产设备的重复投资。这对晶体硅太阳电池的生产具有较大的实际意义。
发明内容
本发明的目的是提出一种新结构的晶体硅异质结太阳电池。
本发明所述的一种新结构的晶体硅异质结太阳电池,包括前电极、TiOx层、晶体硅吸收层、p型晶体硅重掺杂层、钝化层、金属栅状电极。其结构从迎光面开始依次为:前电极、TiOx层、晶体硅吸收层、p型晶体硅重掺杂层、钝化层、金属栅状电极。
所述的TiOx层为n型掺杂。
所述的晶体硅吸收层为n型或p型掺杂。
所述的晶体硅吸收层硅片的表面需双面制绒以减小表面反射率。
所述的p型晶体硅重掺杂层由扩散工艺向硅片背面扩散p型掺杂元素得到。
所述的前电极包含透明导电层和金属栅状电极,同时可在透明导电层和金属栅状电极上使用减反射层以进一步降低表面反射。
所述的钝化层为Al2O3或Al2O3/SiNx混合结构。
本发明使用n型掺杂的TiOx与晶体硅形成异质结,以沉积TiOx的一面作为太阳电池的迎光面,而背面使用传统扩散工艺制备p型重掺杂层。在晶体硅表面沉积的TiOx层可以有效钝化硅片表面,减少界面缺陷态密度。TiOx的导带位置稍高于硅的导带(<0.3eV)而价带位置远低于硅的价带(>2.0eV),所形成的导带阶有助于增强Si/TiOx异质结的内建电场,而价带阶可抑制暗电流或反向饱和电流,这有助于太阳电池产生高的开路电压。另外TiOx层可对晶体硅表面形成钝化,加上Si/TiOx异质结场钝化的效果,可以阻碍在Si/TiOx界面处光生载流子的复合,这有利于提高太阳电池的开路电压和短路电流。背面采用扩散工艺制备p型重掺杂层,可形成有效的背电场,提高开路电压并抑制背表面处光生载流子的复合。在电池背面的p型重掺杂层外,进一步沉积SiNx/Al2O3钝化层并制备金属栅线,光线从背面亦可入射到太阳电池内部,可有效利用周围环境漫反射的太阳光,增加实际发电量。
综上所述,本发明所提出的基于Si/TiOx异质结的晶体硅太阳电池可提高晶体硅太阳电池转换效率,增加太阳电池组件实际发电量,降低光伏发电成本。
本发明所提出的新结构晶体硅异质结电池,可以使晶体硅太阳电池具有高的开路电压和短路电流,从而具有较高的光电转换效率。本发明所提出的晶体硅异质结电池可以在现有晶体硅太阳电池生产线的基础上通过增加少量设备进行生产,从而减少设备方面的投入。另外,本发明所提出的晶体硅异质结电池的双面结构可更充分的利用太阳光,增加实际发电量,降低光伏发电成本。
附图说明
附图1为本发明太阳电池结构示意图。
具体实施方式
本发明将通过以下实施例作进一步说明。
实施例1。
(1)使用n型硅片作为吸收层,对硅片进行初步清洗,双面制绒。
(2)使用扩散工艺在硅片背面制备p型重掺杂层。
(3)背面沉积Al2O3钝化层,随后制备栅状Ag电极。
(4)对硅片正面进行二次清洗。
(5)在硅片正面使用原子层沉积制备TiOx层。
(6)在TiOx层上沉积ITO透明导电层和Ag金属栅线,制备前电极。
实施例2。
(1)使用p型硅片作为吸收层,对硅片进行初步清洗,双面制绒。
(2)使用离子注入工艺制备背面p型重掺杂层。
(3)背面沉积Al2O3/SiNx钝化层,随后制备栅状Cu电极。
(4)对硅片正面进行二次清洗。
(5)在硅片正面使用化学气相沉积制备TiOx层。
(6)在TiOx层上沉积ITO透明导电层和Ag金属栅线,制备前电极。
Claims (8)
1.一种基于Si/TiOx异质结的双面晶体硅太阳电池,其特征是包括前电极、TiOx层、晶体硅吸收层、p型晶体硅重掺杂层、钝化层、金属栅状电极;其结构从迎光面开始依次为:前电极、TiOx层、晶体硅吸收层、p型晶体硅重掺杂层、钝化层、金属栅状电极。
2.根据权利要求1所述的双面晶体硅太阳电池,其特征是所述的TiOx层为n型掺杂。
3.根据权利要求1所述的双面晶体硅太阳电池,其特征是所述的晶体硅吸收层为n型或p型掺杂。
4.根据权利要求1所述的双面晶体硅太阳电池,其特征是所述的晶体硅吸收层硅片的表面需双面制绒以减小表面反射率。
5.根据权利要求1所述的双面晶体硅太阳电池,其特征是所述的p型晶体硅重掺杂层由扩散工艺向硅片背面扩散p型掺杂元素得到。
6.根据权利要求1所述的双面晶体硅太阳电池,其特征是所述的前电极包含透明导电层和金属栅状电极。
7.根据权利要求6所述的双面晶体硅太阳电池,其特征是在透明导电层和金属栅状电极上使用减反射层。
8.根据权利要求1所述的双面晶体硅太阳电池,其特征是所述的钝化层为Al2O3或Al2O3/SiNx混合结构。
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CN106981537A (zh) * | 2017-04-05 | 2017-07-25 | 南昌大学 | 一种应用于晶体硅太阳电池的Si/TiOx结构 |
CN106981523A (zh) * | 2017-04-05 | 2017-07-25 | 南昌大学 | 一种应用于背面接触太阳电池的双层TiOx结构 |
CN110093583A (zh) * | 2018-01-29 | 2019-08-06 | 蓝思科技(长沙)有限公司 | 一种光致变色装饰膜及其制作方法 |
CN111986928A (zh) * | 2020-07-29 | 2020-11-24 | 天津大学 | 硅基半导体pn结结构及其制备方法、光电阴极和应用 |
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