CN106449788A - 晶硅电池多层减反膜及其制造方法 - Google Patents
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Abstract
本发明公开了一种晶硅电池多层减反膜,所述的减反膜沉积于晶硅电池N型面,所述的减反膜由下而上依次包括:氧化硅膜、第一氮化硅膜、第二氮化硅膜、第三氮化硅膜、第四氮化硅膜以及二氧化锆阻挡层,其中氧化硅膜的厚度为5‑25nm,折射率为1.4‑1.5,第一氮化硅膜厚度为6‑12nm,折射率为2.25‑2.35,第二氮化硅膜的厚度为18‑25nm,折射率为2.15‑2.24,第三氮化硅膜的厚度为35‑55nm,折射率为2.05‑2.14,第四氮化硅膜的厚度为15‑30nm,折射率为1.95‑2.04,二氧化锆阻挡层的厚度为30‑50nm。该晶硅电池多层减反膜具有短波响应快、反射率低以及光透性好等优点。
Description
技术领域
本发明涉及太阳能电池的技术领域,特别是涉及一种晶硅电池多层减反膜及其制造方法。
背景技术
电位诱导衰减效应(PID,Potential-Induced Degradation)普遍存在于传统光伏组件之中,根据多家国内外研究机构的结果表明,产生PID的主要原因是:随着光伏组件串联数目不断增大,光伏组件承受高电压对地势能的概率也在提高。当系统的一端接地时,距接地端最远的组件将产生较高对地电势,在欧洲设计标准接近1000v,在如此高压下将产生漏电流,损失发电功率。漏电流一般是经过铝框、封装材料和安装支架流入大地的,其大小与电池材料及工艺、组件材料及工艺、系统安装方法、环境等因素有关。因此,可以从电池、组件和系统三方面来解决。在电池方面,硅片质量、发射极制作方法和钝化减反膜性能对PID影响最大。传统钝化减反膜为单层或多层氮化硅膜,厚度70-90nm,折射率2.0-2.2,尚不能满足抗PID的要求。
传统氮化硅膜为渐变膜,即薄膜由靠近硅片至远离硅片,折射率逐渐减小,厚度逐渐增加。靠近硅片的薄膜称为第一层膜,折射率在2.1-2.3之间,厚度小于20nm;远离硅片的薄膜称为第二层膜,折射率在1.9-2.1之间,厚度在60-80nm。第一层膜为高折射率,对光线吸收严重,减少了入射至硅片的光线。另外,氮化硅膜为渐变膜,膜层之间的折射率差异不明显,发生全反射的概率较小,会有较大一部分逃逸出硅片。
发明内容
发明目的:本发明的目的是提供一种能够有效改善钝化效果、提高减反性能的同时提高抗PID性能的晶硅电池多层减反膜及其制备方法。
技术方案:为实现上述目的,本发明提供了一种晶硅电池多层减反膜,所述的减反膜沉积于晶硅电池N型面,所述的减反膜由下而上依次包括:氧化硅膜、第一氮化硅膜、第二氮化硅膜、第三氮化硅膜、第四氮化硅膜以及二氧化锆阻挡层,其中氧化硅膜的厚度为5-25nm,折射率为1.4-1.5,第一氮化硅膜厚度为6-12nm,折射率为2.25-2.35,第二氮化硅膜的厚度为18-25nm,折射率为2.15-2.24,第三氮化硅膜的厚度为35-55nm,折射率为2.05-2.14,第四氮化硅膜的厚度为15-30nm,折射率为1.95-2.04,二氧化锆阻挡层的厚度为30-50nm。
所述减反膜的制备方法包括以下步骤:
(a)对晶硅电池进行清洗、扩散、二次清洗处理;
(b)使用PECVD法制作氧化硅膜,其中氮气流量为10-20L/min、氨气流量为0.4-1.5L/min、笑气流量为6-8L/min、硅烷流量为2-5L/min,压力2-2.5Torr,电极间距为30-45mm,射频功率5-8kw,持续时间8-15s,处理温度为350-450℃;
(c)使用PECVD法在氧化硅膜上制作第一氮化硅膜,其中氮气流量为10-20L/min、氨气流量为0.6-1.2L/min、硅烷流量为2.6-3.6L/min,压力2-2.5Torr,电极间距为35-48mm,射频功率7-10kw,持续时间6-12s,处理温度为450-500℃;
(d)使用PECVD法在第一氮化硅膜上制作第二氮化硅膜,其中氮气流量为10-20L/min、氨气流量为1.2-1.8L/min、硅烷流量为2.2-2.4L/min,压力2-2.5Torr,电极间距为15-48mm,射频功率7-10kw,持续时间12-35s,处理温度为450-500℃;
(e)使用PECVD法在第二氮化硅膜上制作第三氮化硅膜,其中氮气流量为10-20L/min、氨气流量为2.2-3.5L/min、硅烷流量1.2-2.2L/min,压力2-2.5Torr,电极间距为35-48mm,射频功率7-10kw,持续时间40-55s,处理温度为450-500℃;
(f)使用PECVD法在第三氮化硅膜上制作第四氮化硅膜,其中氮气流量为10-20L/min、氨气流量为3.6-4.8L/min、硅烷流量为0.5-1.0L/min,压力2-2.5Torr,电极间距为35-48mm,射频功率7-10kw,持续时间10-25s,处理温度为450-500℃;
(g)使用旋涂法在第四氮化硅膜上制作二氧化锆阻挡层,二氧化锆溶液中二氧化锆的质量百分比可以为3%-6%,至此,完成多层减反膜的制作。
本发明所述的一种晶硅电池减反膜及其制备方法,具有以下优点:短波响应快:本发明通过在硅片N型面沉淀氧化硅膜,有效减少硅片表面态密度,降低表面复合速率,提升短波响应;反射率低:第一氮化硅膜折射率大于第二氮化硅膜折射率,第二氮化硅膜折射率大于第三氮化硅膜折射率,第三氮化硅膜折射率大于第四氮化硅膜折射率,故光线在第一氮化硅膜与第二氮化硅膜交界面、在第二氮化硅膜与第三氮化硅膜交界面,在二次反射时发生全反射的概率将有很大提高,即有更多的光线进入硅片内,可以产生更多的载流子,其反射率降至3%以下;光透性好:本发明通过在硅片N型面沉积氧化硅膜,所述的氧化硅膜折射率较低,可有效提高减反膜的透光性,且二氧化锆阻挡层的存在提高了晶硅电池的抗PID性能。
附图说明
图1是本发明的晶硅电池减反膜结构示意图。
具体实施方式
下面结合附图和具体实施例,进一步阐明本发明,本实施例在以本发明技术方案为前提下进行实施,应理解这些实施例仅用于说明本发明而不用于限制本发明的范围。
如图1所示的一种晶硅电池多层减反膜,所述的减反膜沉积于晶硅电池N型面,所述的减反膜由下而上依次包括:氧化硅膜1、第一氮化硅膜2、第二氮化硅膜3、第三氮化硅膜4、第四氮化硅膜5以及二氧化锆阻挡层6,其中氧化硅膜1的厚度为5-25nm,折射率为1.4-1.5,第一氮化硅膜厚度2为6-12nm,折射率为2.25-2.35,第二氮化硅膜3的厚度为18-25nm,折射率为2.15-2.24,第三氮化硅膜4的厚度为35-55nm,折射率为2.05-2.14,第四氮化硅膜5的厚度为15-30nm,折射率为1.95-2.04,二氧化锆阻挡层6的厚度为30-50nm。
所述减反膜的制备方法包括以下步骤:
(a)对晶硅电池进行清洗、扩散、二次清洗处理;
(b)使用PECVD法制作氧化硅膜1,其中氮气流量为10-20L/min、氨气流量为0.4-1.5L/min、笑气流量为6-8L/min、硅烷流量为2-5L/min,压力2-2.5Torr,电极间距为30-45mm,射频功率5-8kw,持续时间8-15s,处理温度为350-450℃;
(c)使用PECVD法在氧化硅膜1上制作第一氮化硅膜2,其中氮气流量为10-20L/min、氨气流量为0.6-1.2L/min、硅烷流量为2.6-3.6L/min,压力2-2.5Torr,电极间距为35-48mm,射频功率7-10kw,持续时间6-12s,处理温度为450-500℃;
(d)使用PECVD法在第一氮化硅膜2上制作第二氮化硅膜3,其中氮气流量为10-20L/min、氨气流量为1.2-1.8L/min、硅烷流量为2.2-2.4L/min,压力2-2.5Torr,电极间距为15-48mm,射频功率7-10kw,持续时间12-35s,处理温度为450-500℃;
(e)使用PECVD法在第二氮化硅膜3上制作第三氮化硅膜4,其中氮气流量为10-20L/min、氨气流量为2.2-3.5L/min、硅烷流量1.2-2.2L/min,压力2-2.5Torr,电极间距为35-48mm,射频功率7-10kw,持续时间40-55s,处理温度为450-500℃;
(f)使用PECVD法在第三氮化硅膜4上制作第四氮化硅膜5,其中氮气流量为10-20L/min、氨气流量为3.6-4.8L/min、硅烷流量为0.5-1.0L/min,压力2-2.5Torr,电极间距为35-48mm,射频功率7-10kw,持续时间10-25s,处理温度为450-500℃;
(g)使用旋涂法在第四氮化硅膜5上制作二氧化锆阻挡层6,二氧化锆溶液中二氧化锆的质量百分比可以为3%-6%,至此,完成多层减反膜的制作。
本发明通过在硅片N型面沉淀氧化硅膜,有效减少硅片表面态密度,降低表面复合速率,提升短波响应;第一氮化硅膜折射率大于第二氮化硅膜折射率,第二氮化硅膜折射率大于第三氮化硅膜折射率,第三氮化硅膜折射率大于第四氮化硅膜折射率,故光线在第一氮化硅膜与第二氮化硅膜交界面、在第二氮化硅膜与第三氮化硅膜交界面,在二次反射时发生全反射的概率将有很大提高,即有更多的光线进入硅片内,可以产生更多的载流子,其反射率降至3%以下;本发明通过在硅片N型面沉积氧化硅膜,所述的氧化硅膜折射率较低,可有效提高减反膜的透光性,且二氧化锆阻挡层的存在提高了晶硅电池的抗PID性能。
以上所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明的保护范围。
Claims (2)
1.晶硅电池多层减反膜,所述的减反膜沉积于晶硅电池N型面,其特征在于:所述的减反膜由下而上依次包括:氧化硅膜、第一氮化硅膜、第二氮化硅膜、第三氮化硅膜、第四氮化硅膜以及二氧化锆阻挡层,其中氧化硅膜的厚度为5-25nm,折射率为1.4-1.5,第一氮化硅膜厚度为6-12nm,折射率为2.25-2.35,第二氮化硅膜的厚度为18-25nm,折射率为2.15-2.24,第三氮化硅膜的厚度为35-55nm,折射率为2.05-2.14,第四氮化硅膜的厚度为15-30nm,折射率为1.95-2.04,二氧化锆阻挡层的厚度为30-50nm。
2.根据权利要求1所述的一种晶硅电池多层减反膜,其特征在于:所述减反膜的制备方法包括以下步骤:
(a)对晶硅电池进行清洗、扩散、二次清洗处理;
(b)使用PECVD法制作氧化硅膜,其中氮气流量为10-20L/min、氨气流量为0.4-1.5L/min、笑气流量为6-8L/min、硅烷流量为2-5L/min,压力2-2.5Torr,电极间距为30-45mm,射频功率5-8kw,持续时间8-15s,处理温度为350-450℃;
(c)使用PECVD法在氧化硅膜上制作第一氮化硅膜,其中氮气流量为10-20L/min、氨气流量为0.6-1.2L/min、硅烷流量为2.6-3.6L/min,压力2-2.5Torr,电极间距为35-48mm,射频功率7-10kw,持续时间6-12s,处理温度为450-500℃;
(d)使用PECVD法在第一氮化硅膜上制作第二氮化硅膜,其中氮气流量为10-20L/min、氨气流量为1.2-1.8L/min、硅烷流量为2.2-2.4L/min,压力2-2.5Torr,电极间距为15-48mm,射频功率7-10kw,持续时间12-35s,处理温度为450-500℃;
(e)使用PECVD法在第二氮化硅膜上制作第三氮化硅膜,其中氮气流量为10-20L/min、氨气流量为2.2-3.5L/min、硅烷流量1.2-2.2L/min,压力2-2.5Torr,电极间距为35-48mm,射频功率7-10kw,持续时间40-55s,处理温度为450-500℃;
(f)使用PECVD法在第三氮化硅膜上制作第四氮化硅膜,其中氮气流量为10-20L/min、氨气流量为3.6-4.8L/min、硅烷流量为0.5-1.0L/min,压力2-2.5Torr,电极间距为35-48mm,射频功率7-10kw,持续时间10-25s,处理温度为450-500℃;
(g)使用旋涂法在第四氮化硅膜上制作二氧化锆阻挡层,二氧化锆溶液中二氧化锆的质量百分比可以为3%-6%,至此,完成多层减反膜的制作。
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