CN106444272A - Optical proximity correction method for lithographic process - Google Patents
Optical proximity correction method for lithographic process Download PDFInfo
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- CN106444272A CN106444272A CN201610876654.XA CN201610876654A CN106444272A CN 106444272 A CN106444272 A CN 106444272A CN 201610876654 A CN201610876654 A CN 201610876654A CN 106444272 A CN106444272 A CN 106444272A
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- China
- Prior art keywords
- line
- live width
- value
- spacing
- photoetching process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Abstract
The invention discloses an optical proximity correction method for a lithographic process. According to the optical proximity correction method, the lithographic process capability of a small-dimensional linewidth can be improved by only inserting a pair of scaling bars. The optical proximity correction method comprises the steps of 1, selecting an ISO pattern linewidth region; 2, selecting a line as a reference line with the linewidth of A, adding a scaling bar with the linewidth of C on each of the two sides of the selected line, wherein the spacing between the scaling bars with the linewidth of C and the reference line is B; 3, presetting a linewidth C1 of the scaling bars, then constantly adjusting the spacing B to enable the reference line to obtain a spacing value B1 with the maximum lithographic capability; 4, determining the above-mentioned optimal spacing value B1, and then adjusting the linewidth C1 to enable the reference line to obtain an optical linewidth value C2 with the maximum lithographic capability; 5, determining the linewidth C2 value, and then adjusting the spacing value B1 to enable the reference line with the linewidth of A to obtain the maximum lithographic capability to further obtain the spacing value B2; and 6, recording the linewidth value C2 and the spacing value B2 of the scaling bars at the moment, namely the optical design values of the scaling bars.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to optical proximity correction method in a kind of photoetching process.
Background technology
In semiconductor integrated circuit manufacture process, the photoetching process layer of some small size live widths, owing to being limited to photoetching
The capability problems of machine equipment itself, needs to do optics on this basis and closes on the technological ability that correction (OPC) meets photoetching.Ratio
In the technique at 90nm, the live width technique of small size grid layer (GATE POLY), need to ensure the live width size of each position
Homogeneity and the technological requirement of stability, the i.e. no matter compact district (referred to as Dense pattern) of figure or rarefaction
(referred to as ISO pattern).But in fact, after closing on correction by optics, and under the conditions of optimal photolithographic exposure,
The homogeneity of the live width size of each position can be met, but compare the photolithographic process capability of Dense pattern, ISO
The photolithographic process capability of pattern is still not enough, i.e. the technology stability of this position is poor, so that have impact on the light of this layer
Carving technology ability.
The existing ameliorative way to ISO pattern photoetching process, is to close on correction by a kind of special optics
Method, insert around this ISO pattern differ in size, distance not etc. smaller size of several to compensation line (letter below
Claim：Scaling bar), improve the technological ability of this ISO pattern.In Fig. 1, A is corresponding is the small size in technique
Live width, Ca, Cb, Cc are the live width of scaling bar, and Ba, Bb, Bc are the spacing of line and line, have employed 3 right shown in Fig. 1
The example of scaling bar is actual it is also possible to use more scaling bar.This special optics closes on correction
Method, needs substantial amounts of experimental data to prove, so exploitation is extremely slow and difficult.
Content of the invention
The technical problem to be solved is to provide optical proximity correction method in a kind of photoetching process, improves ISO
The deficiency of pattern photolithographic process capability, to improve the photolithographic process capability of this layer further.
For solving the problems referred to above, optical proximity correction method in photoetching process of the present invention, the step comprising is：
Step 1, the live width region, rarefaction of selected one piece of gate polysilicon layer photoetching process；
Step 2, selects line on the basis of a line, and its live width is A, respectively increases a compensation line in its both sides, and its live width is
C, live width be compensation line and the datum line spacing of c be b；
Step 3, presets live width C1 of compensation line, then constantly regulates spacing B, makes datum line obtain a maximum light
Quarter ability distance values B1；
Step 4, determines above-mentioned optimal distance values B1, then constantly regulates live width C1 of compensation line, make datum line obtain
Value to optimal live width C2 of a maximum lithographic capabilities；
Step 5, it is determined that the value of live width C2, then regulate the value of spacing B1, the datum line making live width be A obtains a maximum
Lithographic capabilities, now obtains the value of spacing B2；
Step 6, records live width C2 of now compensation line and the value of its spacing B2, is i.e. the optimal design value of compensation line.
Further, described method is applicable to the product that process node is not more than 0.13 μm, refers in photoetching process layer, dilute
Dredge the photoetching process floor of the technological ability difference in the technological ability comparatively dense district of district's figure.
Further, in described step 1, rarefaction refers to that live width its live width of class figure and gap sum thereof are not less than 0.5 μ
m.
Further, the compensation line in described step 2 refers to that Central Symmetry is distributed in the line segment of figure both sides, rarefaction, its
Effect is the photolithographic process capability strengthening rarefaction figure, it is impossible to demonstrate litho pattern.
Further, by repeating to implement step 4～5 several times, live width and the spacing of more accurate compensation line can be obtained.
Optical proximity correction method in photoetching process of the present invention, the optics optimizing small size live width photoetching process faces
The nearly method revised, for the ISO Pattern of small size live width, it is only necessary to inserting a pair scaling bar's about
OPC method, so that it may improve the photolithographic process capability of ISO Pattern further, thus the technique effectively optimizing small size live width
Require.
Brief description
Fig. 1 is the structure chart that in photoetching process, optics closes on correction.
Fig. 2 A～2C is the schematic diagram of the compensation line of different pairs.
Fig. 3 is the Contrast on effect curve map of the compensation line of varying number.
Fig. 4 A～4C is the effect schematic diagram of compensation line different spacing value and line width values.
Description of reference numerals
A is live width, and B is spacing, and C is live width.
Detailed description of the invention
The present invention optimizes the method that the optics of small size live width photoetching process closes on correction further, particularly improves
The photolithographic process capability of ISO Pattern.
It shown in Fig. 2 A, 2B, 2C and Fig. 1 is respectively：Fig. 2 A is that ISO Pattern is not inserted into scaling bar, and Fig. 2 B is
Inserting a pair scaling bar, Fig. 2 C is to insert two to scaling bar, and Fig. 1 is to insert three signals to scaling bar
Figure.In each figure, A is corresponding is the small size live width in technique, other be respectively scaling bars live width Ca～Cc and
Between distance Ba～Bc.
Under identical etching condition, their technological ability that can reach is different.From the technological ability of photoetching
Can significantly see in Fig. 3 of contrast, it is worst that Fig. 2 A is that ISO Pattern is not inserted into the technological ability of scaling bar
(corresponding to ordinate in Fig. 3 without scaling bar)；Shown in Fig. 2 C and Fig. 1 be insert two to and insert three to scaling
The technological ability of bar is the highest and extremely close；Although the technological ability that Fig. 2 B inserts a pair scaling bar is slightly worse compared with the latter,
But have greatly improved compared with Fig. 2 A technological ability being not inserted into scaling bar.
Optical proximity correction method in photoetching process of the present invention, it is only necessary to use a pair scaling bar, its signal
Figure is with reference to Fig. 2 B, and the step comprising is：
Step 1, the live width region, rarefaction of selected one piece of gate polysilicon layer photoetching process.
Step 2, selects line on the basis of a line, and its live width is A, respectively increases a scaling bar in its both sides, and i.e. one
Right, its live width is respectively C, and it is symmetrical relative to datum line that the scaling bar of both threads width C and datum line spacing are B.
Step 3, the value of live width C presetting compensation line is C1, then constantly regulates spacing B, makes datum line obtain one
Distance values B1 of individual maximum lithographic capabilities.
Step 4, determines above-mentioned optimal distance values B1, then yet further regulates the line of the compensation line just having obtained
Wide C1, makes datum line obtain the value of optimal live width C of a maximum lithographic capabilities, is recorded as C2.
Step 5, it is determined that value C2 of further accurate live width, further regulates value B1 of spacing B, makes the live width be
The datum line of A obtains a maximum lithographic capabilities, now obtains value B2 of spacing B.
Step 6, records value C2 of the now live width of compensation line and value B2 of spacing B, is i.e. the optimal design value of compensation line.
In order to obtain optimal design load, repeatable enforcement step 4～5, the number of times repeating to implement is more, more can more be optimized
Design load, as shown in figs. 4 a-4 c, the value of constantly fine tuning spacing B and live width C, the design load more accurately more optimizing can be obtained.
These are only the preferred embodiments of the present invention, be not intended to limit the present invention.Those skilled in the art is come
Saying, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, any modification of being made, equivalent
Replacement, improvement etc., should be included within the scope of the present invention.
Claims (5)
1. optical proximity correction method in a photoetching process, it is characterised in that：Comprise the steps：
Step 1, the live width region, rarefaction of selected one piece of gate polysilicon layer photoetching process；
Step 2, selects line on the basis of a line, and its live width is A, respectively increases a compensation line in its both sides, and its live width is C, line
Spacing between the compensation line of wide C and datum line is B；
Step 3, the value of live width C presetting a compensation line is C1, then constantly regulates spacing B, makes datum line obtain one
The distance values of individual maximum lithographic capabilities, is recited as B1；
Step 4, determines above-mentioned optimal distance values B1, and line width values C1 of the regulation compensation line that then or else breaks makes datum line obtain
It to the value of optimal live width C of a maximum lithographic capabilities, is recited as C2；
Step 5, it is determined that further value C2 of live width C, then regulate value B1 of spacing B obtained above, the base making live width be A
Directrix obtains a maximum lithographic capabilities, now obtains the value of optimal spacing B, is recited as B2；
Step 6, records value C2 of now live width C of compensation line and value B2 of spacing B, i.e. obtains the optimal design value of compensation line.
2. optical proximity correction method in photoetching process as claimed in claim 1, it is characterised in that：Described method is applicable to work
Skill node is not more than the product of 0.13 μm, refers in photoetching process layer, the technique in the technological ability comparatively dense district of rarefaction figure
The photoetching process layer of ability.
3. optical proximity correction method in photoetching process as claimed in claim 1, it is characterised in that：In described step 1 sparse
District refers to that live width its live width of class figure and gap sum thereof are not less than 0.5 μm.
4. optical proximity correction method in photoetching process as claimed in claim 1, it is characterised in that：School in described step 2
Main track refers to that Central Symmetry is distributed in the line segment of figure both sides, rarefaction, and its effect is the photoetching process energy strengthening rarefaction figure
Power, but litho pattern can not be demonstrated.
5. optical proximity correction method in photoetching process as claimed in claim 1, it is characterised in that：By repeating to implement step
4～5, line width values and the distance values of more accurate compensation line can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610876654.XA CN106444272A (en) | 2016-09-30 | 2016-09-30 | Optical proximity correction method for lithographic process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610876654.XA CN106444272A (en) | 2016-09-30 | 2016-09-30 | Optical proximity correction method for lithographic process |
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| CN106444272A true CN106444272A (en) | 2017-02-22 |
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| CN201610876654.XA Pending CN106444272A (en) | 2016-09-30 | 2016-09-30 | Optical proximity correction method for lithographic process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107121895A (en) * | 2017-06-30 | 2017-09-01 | 上海华虹宏力半导体制造有限公司 | The method for improving the uniformity of graphics critical dimension in photoetching process |
| CN107706103A (en) * | 2017-10-20 | 2018-02-16 | 上海华力微电子有限公司 | A kind of solution method of polysilicon layer bridge joint open circuit |
| CN108681205A (en) * | 2018-06-13 | 2018-10-19 | 上海华力微电子有限公司 | The OPC verification method of area of grid |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821014A (en) * | 1997-02-28 | 1998-10-13 | Microunity Systems Engineering, Inc. | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask |
| US6492097B1 (en) * | 2000-09-07 | 2002-12-10 | United Microelectronics Corp. | Process for increasing a line width window in a semiconductor process |
| CN1664702A (en) * | 2003-09-05 | 2005-09-07 | Asml蒙片工具有限公司 | Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography |
| CN101893820A (en) * | 2009-05-22 | 2010-11-24 | 中芯国际集成电路制造(北京)有限公司 | Method of optical proximity correction |
-
2016
- 2016-09-30 CN CN201610876654.XA patent/CN106444272A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821014A (en) * | 1997-02-28 | 1998-10-13 | Microunity Systems Engineering, Inc. | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask |
| US6492097B1 (en) * | 2000-09-07 | 2002-12-10 | United Microelectronics Corp. | Process for increasing a line width window in a semiconductor process |
| CN1664702A (en) * | 2003-09-05 | 2005-09-07 | Asml蒙片工具有限公司 | Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography |
| CN101893820A (en) * | 2009-05-22 | 2010-11-24 | 中芯国际集成电路制造(北京)有限公司 | Method of optical proximity correction |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107121895A (en) * | 2017-06-30 | 2017-09-01 | 上海华虹宏力半导体制造有限公司 | The method for improving the uniformity of graphics critical dimension in photoetching process |
| CN107706103A (en) * | 2017-10-20 | 2018-02-16 | 上海华力微电子有限公司 | A kind of solution method of polysilicon layer bridge joint open circuit |
| CN107706103B (en) * | 2017-10-20 | 2019-11-26 | 上海华力微电子有限公司 | A kind of solution of polysilicon layer bridge joint open circuit |
| CN108681205A (en) * | 2018-06-13 | 2018-10-19 | 上海华力微电子有限公司 | The OPC verification method of area of grid |
| CN108681205B (en) * | 2018-06-13 | 2021-05-14 | 上海华力微电子有限公司 | OPC verification method for grid region |
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Application publication date: 20170222 |
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