CN107121895A - The method for improving the uniformity of graphics critical dimension in photoetching process - Google Patents
The method for improving the uniformity of graphics critical dimension in photoetching process Download PDFInfo
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- CN107121895A CN107121895A CN201710530447.3A CN201710530447A CN107121895A CN 107121895 A CN107121895 A CN 107121895A CN 201710530447 A CN201710530447 A CN 201710530447A CN 107121895 A CN107121895 A CN 107121895A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a kind of method for improving the uniformity of graphics critical dimension in photoetching process, comprise the following steps：Step 1: measuring under a variety of figure cycles, influence of a variety of local pattern densities to the graphics critical dimension under the corresponding figure cycle, and photoetching process regulation rule is set up according to measurement result；Step 2: carrying out local pattern density statistics to this layer pattern of designed product domain；Step 3: being distributed according to the local pattern density of this layer pattern, the corresponding light shield critical size of each figure of this layer pattern is adjusted according to photoetching process regulation rule.The present invention can eliminate influence of the change to graphics critical dimension of local pattern density in domain, each graphics critical dimension under various local pattern densities is tended to be identical with design requirement, improve the uniformity of graphics critical dimension.
Description
Technical field
It is more particularly to a kind of to improve figure in photoetching process the present invention relates to a kind of semiconductor integrated circuit manufacture method
The method of the uniformity of critical size.
Background technology
The resolution limit of photoetching process：The half period namely resolution limit of P=k1 × NA/ λ, P for figure, k1 is light
Carving technology coefficient, NA is the numerical aperture of exposure sources, and λ is the wavelength of exposure light source.
It is less and less with the critical size (CD) of figure, it is resolution limit close to exposure limit, various non-lithographic works
The influence of the environmental factor of skill starts to become increasing.Work as k1<Influence becomes more and more obvious when 0.4.
Load effect (loading effect) caused by usual pattern density think on photoetching process be do not have it is influential,
But when CD is less and less, corresponding k1 is less and less, and now pattern density causes CD change will be increasing.
The method of existing Balance graph density
Redundant pattern fills (dummy insert)：The pattern density of domain is entered by inserting circuit unwanted figure
Row adjustment.
Optical approach effect amendment (OPC)：It is different according to the cycle of figure, adjust light shield (mask) CD of domain chi
It is very little.Light shield is described as follows：In IC manufacturing field, light shield be used for define in graphic structure, photoetching process, it is necessary to
Photoresist is first formed on wafer, is then exposed by light source, in exposure process, light source is irradiated to wafer again through light shield
On the photoresist on surface, realize and shift the figure that be defined on light shield on the photoresist of wafer；Afterwards being capable of shape by development
Into photoetching offset plate figure, perform etching to being formed at counter structure on crystal column surface to be formed pair by mask of photoetching offset plate figure again afterwards
The graphic structure answered.So the figure defined in light shield after photoetching process by that can be transferred on the counter structure level of wafer
Such as：Each layer pattern such as polysilicon gate, active area.
Dummy insert are limited by domain circuit design, it is impossible to pattern density is balanced completely, especially locally
The pattern density (local pattern density) in region.
OPC only considers influence of the figure to optical imaging system in itself, does not consider periphery local pattern density to photoetching work
The influence of skill.
And when CD is less and less, corresponding k1 is less and less, and now local pattern density causes CD change will increasingly
When big, local pattern density can not be eliminated using the filling of existing redundant pattern and two kinds of methods of adjustment of optical approach effect amendment
The influence changed to CD, namely in existing process, local pattern density can be to the actual graphical knot to being eventually formed on wafer
The CD of structure produces influence.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of uniformity for improving graphics critical dimension in photoetching process
Method, influence of the change to graphics critical dimension of local pattern density in domain can be eliminated, make various local pattern densities
Under each graphics critical dimension tend to be identical with design requirement, improve graphics critical dimension uniformity.
In order to solve the above technical problems, in the raising photoetching process that provides of the present invention uniformity of graphics critical dimension side
Method comprises the following steps：
Step 1: measuring under a variety of figure cycles, a variety of local pattern densities are to corresponding figure week
The influence of graphics critical dimension under phase, and photoetching process regulation rule is set up according to measurement result；The photoetching process adjustment
Each graphics critical chi after the completion of rule guarantee photoetching process at local pattern density different under each figure cycle
It is very little to tend to be identical with design requirement value, eliminate influence of the different local pattern densities to the graphics critical dimension.
Step 2: carrying out local pattern density statistics to this layer pattern of designed product domain, obtain described
Include on the local pattern density distribution of this layer pattern of product domain, this layer pattern of the product domain according to design need
The figure cycle to be set, the figure cycle has more than one.
Step 3: being distributed according to the local pattern density of this layer pattern of the domain, according to photoetching work described in step one
Skill regulation rule is carried out to the critical size that the corresponding light shield of each figure in this layer pattern of the product domain is mask
Adjustment.
Further improve is to set up the photoetching process regulation rule in step one to include as follows step by step：
Step 11, produce one group and there are the different figure cycles and each figure cycle includes the various offices again
The resolution chart of portion's pattern density.
Step 12, the test domain for forming each resolution chart simultaneously carry out measuring each figure cycle after photoetching process
The graphics critical dimension under the different local pattern densities value.
Step 13, make according to being adjusted in step 12 to the measured value of the graphics critical dimension to lithography process parameters
The graphics critical dimension under the different local pattern densities in each figure cycle reaches unanimity.
Further improve is, when local pattern density described in step 2 is counted, corresponding regional area cell size
It is identical with the region area size of resolution chart described in step one.
Further improve is that the different local pattern densities of resolution chart described in step 11 are using progress redundant pattern
Filling is realized.
Further improving is, being adjusted to what lithography process parameters were carried out according to local pattern density pair in step 13
The corresponding light shield critical size of figure of domain is adjusted.
Further improve is that this layer pattern of product domain described in step 2 has carried out redundancy according to design needs
Filling graph is adjusted and optical approach effect amendment adjustment.
Further improve is, when the preceding layer pattern in the product domain has an impact to this layer pattern, repeat step
One to three, one the step of repeating in, the different local pattern densities of the resolution chart in step 11 are using carrying out front layer
Filling graph is realized.
Carry out counting the Local map of the preceding layer pattern in two the step of repeating during the local pattern density statistics
Shape Density Distribution.
In three the step of repeating, it is distributed according to the local pattern density of the preceding layer pattern of the domain, according to institute
Photoetching process regulation rule is stated to carry out the corresponding light shield critical size of each figure in this layer pattern of the product domain
Adjustment.
The present invention from the prior art can not by redundant pattern filling and two kinds of methods of adjustment of optical approach effect amendment
Eliminate local pattern density to set out to the technical problem of the CD influences changed, devise step one to measure a variety of figures
Influence of the different local pattern densities to the graphics critical dimension in corresponding figure cycle under cycle, and according to it is this influence come
The method for setting regulation technological parameter is photoetching process regulation rule, and photoetching process regulation rule can guarantee that after the completion of photoetching process
Each graphics critical dimension under each figure cycle at different local pattern densities reaches unanimity, and eliminates different local figures
Influence of the density to the graphics critical dimension；Afterwards, during layout design, on the basis of the good domain of existing design
The step of local pattern density is counted is added, each of this layer pattern that can be obtained on domain is counted by local pattern density
Local pattern density distribution under the figure cycle；Afterwards, it is distributed, then is applied mechanically according to the local pattern density of this layer pattern of domain
The photoetching process regulation rule set before can realize the corresponding Mask of each figure i.e. light shield in this layer pattern to product domain
Critical size is adjusted, and each graphics critical dimension in this layer pattern of product domain is adjusted and is tended to and set
Meter required value is identical, namely the present invention can be finally transferred to using the figure on light shield and is formed on the figure of the product of wafer
Feature, the influence according to the local pattern density crossed after tested to each graphics critical dimension of this layer pattern of product domain is big
It is small to set photoetching process regulation rule, and the critical size of light shield is carried out in advance according to the photoetching process regulation rule of setting
Adjustment, this layer figure of the local pattern density to the i.e. product domain of figure of product is offset by the adjustment of the critical size of light shield
The influence of shape, namely when local pattern density can make the critical size of the figure of product relative to desired value increase, can drop
Low corresponding light shield critical size, so using the crucial chi for the figure that can make product after the light shield progress photoetching after adjustment
It is very little, due to specifically needing the critical size to light shield to carry out how many adjustment i.e. critical size adjustment amounts of light shield by step
One determines, i.e., be adjusted the adjustment for the critical size that light shield can be achieved according to photoetching process regulation rule to offset Local map
Shape density is the influence of this layer pattern of product domain to the figure of product；So to eliminate local figure in domain close by the present invention
Influence of the change of degree to graphics critical dimension, each graphics critical dimension under various local pattern densities is tended to and is designed will
Ask identical, can finally improve the uniformity of graphics critical dimension.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description：
Fig. 1 is present invention method flow chart；
Fig. 2A is the structure chart of local pattern density lower region in domain；
Fig. 2 B are the structure charts of local pattern density upper zone in domain；
Fig. 3 A are influence curve of the local pattern density to graphics critical dimension；
Fig. 3 B are the embodiment of the present invention according to local pattern density to the influence curve formation of graphics critical dimension to light
The curve of carving technology parameter adjustment.
Embodiment
As shown in figure 1, being present invention method flow chart, the embodiment of the present invention improves graphics critical in photoetching process
The method of the uniformity of size comprises the following steps：
Step 1: measuring under a variety of figure cycles, a variety of local pattern densities are to corresponding figure week
The influence of graphics critical dimension under phase, and photoetching process regulation rule is set up according to measurement result；The photoetching process adjustment
Each graphics critical chi after the completion of rule guarantee photoetching process at local pattern density different under each figure cycle
It is very little to tend to be identical with design requirement value, eliminate influence of the different local pattern densities to the graphics critical dimension.
The photoetching process regulation rule is set up in present invention method, in step one to be included as follows step by step：
Step 11, produce one group and there are the different figure cycles and each figure cycle includes the various offices again
The resolution chart of portion's pattern density.The region of the resolution chart is mainly determined by area, for convenience of explanation, with institute's test chart
The region of shape for square exemplified by be described as follows：The area size of the resolution chart is A × A, and A is 50 μm~1000 μ
m；More preferably it is selected as：A is 100 μm~500 μm.In actual step, the region of the resolution chart can also use other shapes, no
It is limited to square.The region of the corresponding regional area size of local pattern density described in subsequent step two and the resolution chart
Size is identical.
The different local pattern densities of the resolution chart are realized using redundant pattern filling is carried out.The test domain is not
Need not needing OPC by optical approach effect amendment adjustment, only need to measure corresponding different cycles or stepping
(pitch), CD changes of the difference mask CD under different local pattern densities (local pattern density)；And
The local pattern density distribution that can be then obtained in subsequent step three according to step 2, the mask CD later to OPC is entered by step one
Row adjustment, is subsequently discussed in greater detail.
On the test domain or follow-up product domain of the resolution chart of different local pattern densities, figure may be referred to
Shown in 2A and Fig. 2 B, Fig. 2A is the structure chart of local pattern density lower region in domain, and Fig. 2 B are that local figure is close in domain
Spend the structure chart of upper zone.It was found from shown in Fig. 2A, in whole local layout area, region only shown in dotted line frame 101
It is that mark 103 and 104 is all this layer pattern in the circuitous pattern structure of chip, dotted line frame 101 with graphic structure, is only processing
Level is different.Redundant pattern 102 is employed in other places to be filled, it can be seen that redundant pattern 102 can be by whole office
The density of portion's layout area does balance substantially, but is limited in itself by graphic structure, unrelated that local layout area is entered
The complete balance of row, all has less local figure close as shown in dotted line circle 101 at the inside of graphics field and adjoining position
Degree.In addition, as can be seen from Figure 2B, in Fig. 2 B there are multiple graphic structures to be this layer pattern 103 and 104, these graphic structures
103 and 104 are filled local layout area, the higher figure of graphic structure density of the formation than Fig. 2A.
Step 12, the test domain for forming each resolution chart simultaneously carry out measuring each figure cycle after photoetching process
The graphics critical dimension under the different local pattern densities value.
As shown in Figure 3A, it is influence curve of the local pattern density to graphics critical dimension；Desired value is shown in Fig. 3 A
For the corresponding curve of graphics critical dimension of a value, abscissa is for local pattern density namely corresponding to each resolution chart region
In the range of local pattern density, ordinate is graphics critical dimension, and curve 201 is the graphics critical dimension of actual measurement with office
The curve of portion pattern density change is with local figure to the critical size of figure being formed at after the completion of photoetching process on wafer
The curve of variable density；Curve 202 is the setting curve of the graphics critical dimension (mask CD) on the corresponding light shield of domain, is adopted
The curve of the actual graphical of domain for being carried out obtaining after photoetching with the corresponding light shield of curve 202 will be curve 201.And, curve
203 be that the actual graphical being formed on wafer should in target for desired value (Target CD) curve of graphics critical dimension
It is consistent with curve 203, namely perfect condition lower curve 201 and 203 should overlap, however, it is possible to find out curve 201 and 203 only
It is just overlapping when more than the certain value such as local pattern density of the corresponding position of dotted line circle 301, when local pattern density is relatively low
Curve 201 deviates from curve 203 when being less than the local pattern density such as the corresponding position of dotted line circle 301, here it is Local map
Shape density is adversely affected to graphics critical dimension.
Step 13, make according to being adjusted in step 12 to the measured value of the graphics critical dimension to lithography process parameters
The graphics critical dimension under the different local pattern densities in each figure cycle reaches unanimity.Preferably
For what lithography process parameters were carried out is adjusted to the corresponding light shield critical size adjustment of figure to domain.
As shown in Figure 3 B, it is that the embodiment of the present invention is formed according to local pattern density to the influence curve of graphics critical dimension
The curve that lithography process parameters are adjusted, compare Fig. 3 B and Fig. 3 A and understand, the present invention is improved mask CD, i.e.,
The corresponding light shield critical size adjustment of figure to domain is carried out in inventive embodiments method, curve 204 is actually to be carried out at
The adjustment curve of the corresponding light shield critical size of figure of the domain of graphic structure on wafer, comparison curves 202 and 204 is bent
In line 204, at relatively low local pattern density, curve 204 adds light shield critical size；At higher local pattern density,
Curve 204 is identical with the light shield critical size of existing curve 202.So, after using being adjusted to light shield critical size
It is that the graphics critical dimension of the figure formed on wafer after exposure imaging will that the corresponding domain of curve 204, which carries out photoetching process,
Tend to overlap with aim curve 203, each graphics critical dimension can be made all to level off to desired value respectively, closed so as to improve figure
The uniformity of key size.
Step 2: deisgn product domain, product domain includes multi-layer graphical, now individually with current this layer of figure handled
Illustrated exemplified by shape, preceding layer pattern is the layer pattern formed before the exposure of this layer pattern, rear layer pattern is at this
Layer pattern exposes and carries out a layer pattern after being formed, therefore illustrates to handle i.e. this layer pattern in present invention method
Can.This layer pattern of the product domain has carried out redundant pattern filling adjustment according to design needs and an optics closes on
Effect amendment is adjusted.After optical approach effect amendment adjustment, obtained domain, which is measured, will obtain Fig. 3 A
Result corresponding to curve 201.
Afterwards, local pattern density statistics is carried out to this layer pattern of designed product domain, obtains the production
Include on the local pattern density distribution of this layer pattern of product domain, this layer pattern of the product domain according to design needs
The figure cycle of setting, the figure cycle has more than one.The local pattern density distribution refer to Fig. 2A and Fig. 2 B institutes
Show, relatively low local pattern density region is corresponded in Fig. 2A, although having carried out the filling of redundant pattern 101 in Fig. 2A,
Still can not be Fig. 2A and Fig. 2 B local pattern density complete equipilibrium.
Step 3: being distributed according to the local pattern density of this layer pattern of the domain, adjusted according to the photoetching process
Rule is adjusted to the corresponding light shield critical size of each figure in this layer pattern of the product domain.The present invention is implemented
In example method, according to the figure being adjusted to domain carried out in photoetching process regulation rule described in step one to lithography process parameters
The corresponding light shield critical size adjustment of shape, may be referred to shown in Fig. 3 B, and curve 204 can carry out corresponding according to local pattern density
Change, can increase the mask CD in low local pattern density region in such as curve 204, due to being had been carried out in step 2 before
OPC, therefore the mask CD at this are also referred to as OPC mask CD；Complete after photoetching process, low local pattern density can be increased
The critical size of the figure in region；Curve 204 does not change OPC mask CD in high local pattern density region, so
After adjustment, can make the critical size of figure all tends to the corresponding critical size value of Fig. 2A curves 202, therefore can increase the key of figure
The uniformity of size.Although curve 204 only show the adjustment of 2 segmentations in Fig. 3 B, actually can be according to local pattern density
Influence to graphics critical dimension carries out multisection type adjustment, as principle is with the 2 segmentations adjustment of curve 204, here no longer
The detailed description of expansion.
When the preceding layer pattern in the product domain has an impact to this layer pattern, repeat step one to three, what is repeated
In step one, the different local pattern densities of the resolution chart in step 11 are using progress front layer filling graph realization.
Carry out counting the Local map of the preceding layer pattern in two the step of repeating during the local pattern density statistics
Shape Density Distribution.
In three the step of repeating, it is distributed according to the local pattern density of the preceding layer pattern of the domain, according to institute
Photoetching process regulation rule is stated to carry out the corresponding light shield critical size of each figure in this layer pattern of the product domain
Adjustment.
The present invention is described in detail above by specific embodiment, but these not constitute the limit to the present invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, and these also should
It is considered as protection scope of the present invention.
Claims (7)
1. a kind of method for improving the uniformity of graphics critical dimension in photoetching process, it is characterised in that comprise the following steps：
Step 1: measuring under a variety of figure cycles, a variety of local pattern densities are under the corresponding figure cycle
Graphics critical dimension influence, and photoetching process regulation rule is set up according to measurement result；The photoetching process regulation rule
Each graphics critical dimension after the completion of guarantee photoetching process at local pattern density different under each figure cycle becomes
In identical with design requirement value, influence of the different local pattern densities to the graphics critical dimension is eliminated；
Step 2: carrying out local pattern density statistics to this layer pattern of designed product domain, the product is obtained
Include on the local pattern density distribution of this layer pattern of domain, this layer pattern of the product domain and set according to design needs
The figure cycle put, the figure cycle has more than one；
Step 3: being distributed according to the local pattern density of this layer pattern of the domain, adjusted according to photoetching process described in step one
Whole rule is adjusted to the corresponding light shield critical size of each figure in this layer pattern of the product domain.
2. the method for the uniformity of graphics critical dimension in photoetching process is improved as claimed in claim 1, it is characterised in that：Step
The photoetching process regulation rule is set up in rapid one to be included as follows step by step：
Step 11, produce one group and there are the different figure cycles and each figure cycle includes the various Local maps again
The resolution chart of shape density；
Step 12, the test domain for forming each resolution chart and carrying out measured after photoetching process each figure cycle
The value of the graphics critical dimension under the different local pattern densities；
Step 13, make each institute according to being adjusted in step 12 to the measured value of the graphics critical dimension to lithography process parameters
The graphics critical dimension under the different local pattern densities for stating the figure cycle reaches unanimity.
3. improving the method for the uniformity of graphics critical dimension in photoetching process as claimed in claim 1 or 2, its feature exists
In：When local pattern density described in step 2 is counted, resolution chart described in corresponding regional area cell size and step one
Region area size it is identical.
4. the method for the uniformity of graphics critical dimension in photoetching process is improved as claimed in claim 2, it is characterised in that：Step
The different local pattern densities of resolution chart described in rapid 11 are realized using redundant pattern filling is carried out.
5. the method for the uniformity of graphics critical dimension in photoetching process is improved as claimed in claim 2, it is characterised in that：Step
Crucial to the corresponding light shield of the figure of domain according to local pattern density is adjusted to lithography process parameters progress in rapid 13
Size is adjusted.
6. the method for the uniformity of graphics critical dimension, its feature in the raising photoetching process as described in claim 1 or 2 or 5
It is：This layer pattern of product domain described in step 2 according to design needs carried out redundant pattern filling adjustment and once
Optical approach effect amendment is adjusted.
7. the method for the uniformity of graphics critical dimension in photoetching process is improved as claimed in claim 2, it is characterised in that：When
When preceding layer pattern in the product domain has an impact to this layer pattern, repeat step one to three, repeat the step of one in, step
The different local pattern densities of the resolution chart in rapid 11 are using progress front layer filling graph realization；
The local figure for carrying out counting the preceding layer pattern in two the step of repeating during the local pattern density statistics is close
Degree distribution；
In three the step of repeating, it is distributed according to the local pattern density of the preceding layer pattern of the domain, according to the light
Carving technology regulation rule is adjusted to the corresponding light shield critical size of each figure in this layer pattern of the product domain.
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| CN114859669A (en) * | 2022-04-14 | 2022-08-05 | 上海华力集成电路制造有限公司 | Method for adjusting ADI size in photoetching process |
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| CN111308852A (en) * | 2020-03-24 | 2020-06-19 | 上海华力集成电路制造有限公司 | Method for screening photomask auxiliary graph |
| CN111308852B (en) * | 2020-03-24 | 2023-08-15 | 上海华力集成电路制造有限公司 | Method for screening auxiliary graph of photomask |
| CN114859669A (en) * | 2022-04-14 | 2022-08-05 | 上海华力集成电路制造有限公司 | Method for adjusting ADI size in photoetching process |
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