CN111965934B - OPC correction through hole selection method - Google Patents

OPC correction through hole selection method Download PDF

Info

Publication number
CN111965934B
CN111965934B CN202010576117.XA CN202010576117A CN111965934B CN 111965934 B CN111965934 B CN 111965934B CN 202010576117 A CN202010576117 A CN 202010576117A CN 111965934 B CN111965934 B CN 111965934B
Authority
CN
China
Prior art keywords
holes
hole
type
adjacent
selecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010576117.XA
Other languages
Chinese (zh)
Other versions
CN111965934A (en
Inventor
齐雪蕊
何大权
陈翰
张辰明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huali Microelectronics Corp
Original Assignee
Shanghai Huali Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Huali Microelectronics Corp filed Critical Shanghai Huali Microelectronics Corp
Priority to CN202010576117.XA priority Critical patent/CN111965934B/en
Publication of CN111965934A publication Critical patent/CN111965934A/en
Application granted granted Critical
Publication of CN111965934B publication Critical patent/CN111965934B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

The invention provides a selection method of OPC corrected through holes, which comprises the following steps: selecting through holes with the sizes meeting design rules as first through holes, wherein the through holes are square and are provided with a first side, a second side, a third side and a fourth side; selecting through holes with the distance between the first edge and the opposite hole adjacent to the first edge as a first preset value from the first type of through holes as second type of through holes; selecting a through hole with the distance between the second side and the projection hole adjacent to the second side being a second preset value and the distance between the third side and the projection hole adjacent to the third side being a second preset value from the second class of through holes as a third class of through holes; extending the fourth ends of the third type of through holes to form a fifth side, and taking the fifth side as one side to form a rectangular frame, wherein the rectangular frame is adjacent to and in contact with the third type of through holes; the through hole contacted with the edge adjacent to the fifth edge in the rectangular frame is the target through hole to be selected. The invention can select a proper target through hole and improve the accuracy of OPC correction in the subsequent process.

Description

OPC correction through hole selection method
Technical Field
The invention relates to the technical field of semiconductors, in particular to a selection method of an OPC correction through hole.
Background
In deep submicron integrated circuit fabrication, model-based optical correction technology (Optical Proximity Correct, OPC) processes have been widely used in different levels of lithography. By establishing a photoetching model corrected by silicon wafer data, the phenomenon of pattern transfer distortion under specific photoetching process conditions can be well predicted, then certain pattern compensation or correction is made according to the distortion condition of model simulation, the corrected pattern is simulated again and checked to reach the target, and after a certain number of iterations are circulated, the simulation of the final pattern can be as close to the target pattern as possible, which is the existing OPC processing method based on the model (hereinafter referred to as a traditional OPC method).
In the photolithography process, optical correction techniques (Optical Proximity Correct, OPC) are introduced to compensate for errors caused by the limited resolution of the optical system, because the actual patterns on the wafer will always differ slightly after exposure of the design pattern due to the optical proximity effect (Optical Proximity Effect). As technology nodes of the chip enter tens of nanometers, OPC technology is widely used, and simultaneously, complexity of layout design and line width become smaller gradually, and optical correction program becomes more and more complex. However, in the actual correction process, the OPC correction pattern segments must reach a certain size, which may affect the OPC correction accuracy to a certain extent, especially in the case of complex pattern structures, due to the limitation of mask manufacturing capability.
The primary task of OPC processing is to select the appropriate via, which is conventionally selected by the size of the via and the distance to its neighboring vias. However, for the through holes with compact space and complex environment, the through holes cannot be selected by the conventional method, and many unsuitable through holes may be selected only by taking the size as the basis for selecting the suitable through holes, for example, as shown in fig. 1, the holes in the black frame of the left graph cannot be selected, because the holes in the black frame of the right graph are also selected. If the selected via is not appropriate, correction accuracy of part of the via pattern will be affected.
Disclosure of Invention
The invention aims to provide a selection method of OPC corrected through holes, which can select proper through holes and improve the correction precision of the follow-up OPC.
In order to achieve the above object, the present invention provides a method for selecting an OPC-corrected via hole, comprising:
selecting through holes with dimensions meeting design rules as first type through holes, wherein the through holes are square, and the through holes are provided with four sides, which are respectively: a first side, a second side, a third side, and a fourth side, the first side being opposite the fourth side, the second side being opposite the third side;
selecting through holes with the distance between the opposite holes adjacent to the first edge from the first through holes as second through holes, wherein the distance between the opposite holes adjacent to the first edge is a first preset value;
selecting a through hole with the distance between the second side and the projection hole adjacent to the second side being a second preset value and the distance between the third side and the projection hole adjacent to the third side being a second preset value from the second class of through holes as a third class of through holes;
extending the fourth ends of the third type of through holes to form a fifth side, and taking the fifth side as one side to form a rectangular frame, wherein the rectangular frame is adjacent to and contacted with the third type of through holes;
and the through holes contacted with the edges adjacent to the fifth edge in the rectangular frame are target through holes to be selected.
Optionally, in the method for selecting an OPC correction through hole, the opposite hole is a through hole on the opposite side, and the projection hole is a through hole on the obliquely opposite side.
Optionally, in the method for selecting an OPC through hole, the rectangular frame is a rectangular frame.
Optionally, in the method for selecting OPC corrected through holes, the size of the first type of through holes is a×a; wherein: a is the side length of the first type of through hole.
Optionally, in the method for selecting an OPC through hole, the first preset value is 1/2*a-2/3*a; wherein: a is the side length of the first type of through hole.
Optionally, in the method for selecting an OPC through hole, the second preset value is 1/2*a-5/6*a; wherein: a is the side length of the first type of through hole.
Optionally, in the method for selecting an OPC through hole, the fourth extension size is c, and the value range of c is 1/2*a-5/6*a; wherein: a is the side length of the first type of through hole.
Optionally, in the method for selecting an OPC-correction through hole, a side length of the rectangular frame is: a+2*c, adjacent one side length is: d, a step of; wherein: d <1/2*a; a is the side length of the first type of through hole, and c is the fourth elongated dimension.
Optionally, in the method for selecting an OPC-corrected through hole, a projection length of the projection hole along the second side or the third side is less than 1/2*a; wherein: a is the side length of the first type of through hole.
Optionally, in the method for selecting OPC correction holes, the number of the rectangular frames is one or two or more.
In the method for selecting the OPC corrected through holes provided by the invention, the method for selecting the OPC corrected through holes comprises the following steps: selecting through holes with dimensions meeting design rules as first type through holes, wherein the through holes are square, and the through holes are provided with four sides, which are respectively: a first side, a second side, a third side, and a fourth side, the first side being opposite the fourth side, the second side being opposite the third side; selecting through holes with the distance between the first side and the opposite hole adjacent to the first side being a first preset value from the first type through holes as second type through holes; selecting a through hole with the distance between the second side and the projection hole adjacent to the second side being a second preset value and the distance between the third side and the projection hole adjacent to the third side being a second preset value from the second class of through holes as a third class of through holes; extending the fourth ends of the third type of through holes to form a fifth side, and taking the fifth side as one side to form a rectangular frame, wherein the rectangular frame is adjacent to and contacted with the third type of through holes; and the through holes contacted with the edges adjacent to the fifth edge in the rectangular frame are target through holes to be selected. By the method provided by the embodiment of the invention, the proper target through hole can be selected, and the accuracy of OPC correction in the subsequent flow is improved.
Drawings
FIG. 1 is a flow chart of a method of selecting OPC corrected vias in accordance with an embodiment of the present invention;
FIGS. 2 to 3 are schematic diagrams illustrating a selection method of OPC corrected via holes according to an embodiment of the invention;
in the figure: 110-first through hole, 120-opposite hole, 130-first projection hole, 140-second projection hole, 111-first side, 112-second side, 113-third side, 114-fourth side, 115-fifth side, 150-rectangular frame, 160-target through hole.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the drawings. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are not to scale precisely, but rather merely for the purpose of facilitating and clearly aiding in the description of the embodiments of the invention.
In the following, the terms "first," "second," and the like are used to distinguish between similar elements and are not necessarily used to describe a particular order or chronological order. It is to be understood that such terms so used are interchangeable under appropriate circumstances. Similarly, if a method described herein comprises a series of steps, and the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method.
Referring to fig. 1, the present invention provides a method for selecting an OPC through hole, which includes:
s11: selecting through holes with dimensions meeting design rules as first type through holes, wherein the through holes are square, and the through holes are provided with four sides, which are respectively: a first side, a second side, a third side, and a fourth side, the first side being opposite the fourth side, the second side being opposite the third side;
s12: selecting through holes with the distance between the opposite holes adjacent to the first edge from the first through holes as second through holes, wherein the distance between the opposite holes adjacent to the first edge is a first preset value;
s13: selecting a through hole with the distance between the second side and the projection hole adjacent to the second side as a second preset value and the distance between the third side and the projection hole adjacent to the third side as a second preset value from the second type of through holes as a third type of through holes;
s14: extending the fourth ends of the third type of through holes to form a fifth side, and taking the fifth side as one side to form a rectangular frame, wherein the rectangular frame is adjacent to and contacted with the third type of through holes;
s15: and the through holes contacted with the edges adjacent to the fifth edge in the rectangular frame are target through holes to be selected.
Next, referring to fig. 2 and 3, in the embodiment of the present invention, the opposite hole 120 is an opposite through hole, and the projection hole is an obliquely opposite through hole. Since there may be a plurality of through holes in a layout, the positions of the through holes are variable, and there are various relevant positions, where the opposite hole 120 of a through hole refers to the opposite through hole of the through hole, and in the embodiment of the present invention, the opposite hole 120 adjacent to the first edge 111 is found, and thus, the hole adjacent to the first edge 111 and opposite to the first edge 111 is found, as shown in fig. 2, the first through hole 110 is a first type of through hole that corresponds to the first type found in the first step, and only one through hole of the first type is used herein, because only one example is used, the adjacent through hole opposite to the first edge 111 of the first through hole 110 is the opposite hole 120, and the diagonally opposite surface of the second edge 112 is provided with a through hole, which is a projection hole that needs to be found, and is named as the first projection hole 130. Likewise, a through hole, here designated as a second projection hole 140, is also provided diagonally opposite the third side 113.
The through holes in the embodiment of the present invention are square, and the four sides are named as the first side 111, the second side 112, the third side 113 and the fourth side 114, which are just one embodiment, in other embodiments of the present invention, may be named as other names, and in other embodiments of the present invention, the relative order and the relative positions of the first side, the second side, the third side and the fourth side may be changed, so long as it is ensured that the distance from one side to the corresponding facing hole of the side is a first preset value. The distance from each side to the projection hole corresponding to each side is a second preset value. There is a remaining one side that can be used to form a rectangular frame 150 adjacent to and contiguous with the first through hole 110. In the embodiment of the invention, the rectangular frame is a rectangular frame, and the through hole contacted with the short side of the rectangular frame is the target through hole.
In the embodiment of the present invention, the size of the first type of via hole is a×a; wherein: a is the side length of the first type of through hole. The first step in the embodiment of the present invention is to select a first type of through hole with a size that meets the target, and if the size of the first type of through hole does not reach the standard, the subsequent OPC accuracy may be affected by such a through hole.
In the embodiment of the invention, the first preset value is 1/2*a-2/3*a; wherein: a is the side length of the first type of through hole. If the size of the first type of square through holes meeting the target is a, in order to select excellent through holes, the embodiment of the invention also defines a first preset value, and the value of the first preset value is 1/2*a-2/3*a, for example, may be 1/2*a, 2/3*a or 7/12 a.
In the embodiment of the invention, the second preset value is 1/2*a-5/6*a; wherein: a is the side length of the first type of through hole.
In the embodiment of the invention, the extension dimension of the fourth side 114 is c, the value range of c is 1/2*a-5/6*a, and a is the side length of the first type through hole. The fourth side 114 is elongated to form a fifth side 115, and the fifth side 115 is used as a side to form a rectangular frame 150. The dimensions of the rectangular frame 150 formed are: (a+ 2*c) d, where d <1/2 a, a is the side length of the first type of via and c is the extension of fourth side 114. I.e., the length of the fifth side 115 is a +2*c and the length of the short side of the rectangular frame 150 is d. The through hole with which the short sides of the rectangular frame 150 are in contact is the target through hole 160 to be selected.
In the embodiment of the present invention, the projection length of the projection hole along the second side 112 or the third side 113 is less than 1/2×a, where a is the side length of the first type of through hole. The projection length of the projection hole corresponding to the second side means that the projection hole moves along the rising direction of the second side 112 to a distance that can be on the same line perpendicular to the second side 112 as the projection hole of the first type. Similarly, the projection length of the projection hole corresponding to the third side 113 means that the projection hole moves along the rising direction of the third side 113 to a distance that can be on the same line perpendicular to the third side 113 as the projection hole of the first type. The distance between the second side 112 of the third type of through hole and the projection hole (second projection hole 140) adjacent to the second side 112 is a second preset value, which means that the distance between the second side 112 of the third type of through hole and the projection hole adjacent to the second side 112 is the second preset value, that is, the projection hole moves along the direction perpendicular to the second side 112 until the projection hole is on the same line with the third type of through hole along the lifting direction of the second side 112, and the distance between the second side 112 and the projection hole adjacent to the second side 112 is the distance.
In the embodiment of the invention, the first type of through holes are one or two or more; the number of the second type through holes is one or two or more; the number of the third type of through holes is one or two or more, and the number of the rectangular frames is one or two or more. Since there are a plurality of through holes, the first type of through holes, the second type of through holes and the third type of through holes and the rectangular frame 150 which are screened out from the above step by step may be all plural, however, it is possible that the number of the through holes which meet the standard is small, and the first type of through holes, the second type of through holes and the third type of through holes and the rectangular frame 150 may be all one or two. For example, the first via 110 is a first type of via and is a second type of via or a third type of via.
In summary, in the method for selecting an OPC through hole according to the embodiment of the present invention, the method for selecting an OPC through hole includes: selecting through holes with dimensions meeting design rules as first type through holes, wherein the through holes are square, and the through holes are provided with four sides, which are respectively: a first side, a second side, a third side, and a fourth side, the first side being opposite the fourth side, the second side being opposite the third side; selecting through holes with the distance between the opposite holes adjacent to the first edge from the first through holes as second through holes, wherein the distance between the opposite holes adjacent to the first edge is a first preset value; selecting a through hole with the distance between the second side and the projection hole adjacent to the second side being a second preset value and the distance between the third side and the projection hole adjacent to the third side being a second preset value from the second class of through holes as a third class of through holes; extending the fourth ends of the third type of through holes to form a fifth side, and taking the fifth side as one side to form a rectangular frame, wherein the rectangular frame is adjacent to and contacted with the third type of through holes; and the through holes contacted with the edges adjacent to the fifth edge in the rectangular frame are target through holes to be selected. By the method provided by the embodiment of the invention, the proper target through hole can be selected, and the accuracy of OPC correction in the subsequent flow is improved.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art may make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention within the scope of the technical solution without departing from the invention, and the technical solution is not departing from the scope of the invention.

Claims (3)

1. A method of selecting an OPC-corrected via, comprising:
selecting through holes with dimensions meeting design rules as first type through holes, wherein the through holes are square, and the through holes are provided with four sides, which are respectively: a first side, a second side, a third side, and a fourth side, the first side being opposite the fourth side, the second side being opposite the third side;
selecting through holes with the distance between the opposite holes adjacent to the first edge from the first through holes as second through holes, wherein the distance between the opposite holes adjacent to the first edge is a first preset value;
selecting a through hole with the distance between the second side and the projection hole adjacent to the second side being a second preset value and the distance between the third side and the projection hole adjacent to the third side being a second preset value from the second class of through holes as a third class of through holes;
extending the fourth ends of the third type of through holes to form a fifth side, and taking the fifth side as one side to form a rectangular frame, wherein the rectangular frame is adjacent to and contacted with the third type of through holes;
the through holes contacted with the edges adjacent to the fifth edge in the rectangular frame are target through holes to be selected;
the opposite holes are through holes which are opposite, and the projection holes are through holes which are obliquely opposite;
the size of the first type of through holes is a; wherein: a is the side length of the first type of through holes;
the first preset value is 1/2*a-2/3*a; wherein: a is the side length of the first type of through holes;
the second preset value is 1/2*a-5/6*a; wherein: a is the side length of the first type of through holes;
the extension size of the fourth side is c, and the value range of c is 1/2*a-5/6*a; wherein: a is the side length of the first type of through holes;
one side length of the rectangular frame is a+2*c, and the adjacent side length is: d, a step of; wherein: d <1/2*a; a is the side length of the first type through hole, c is the fourth prolonged size;
the projection length of the projection hole along the second side or the third side is less than 1/2*a; wherein: a is the side length of the first type of through hole.
2. The method of selecting an OPC through-hole of claim 1 wherein the rectangular frame is a rectangular frame.
3. The method of selecting OPC through-holes of claim 1 wherein the number of rectangular frames is at least one.
CN202010576117.XA 2020-06-22 2020-06-22 OPC correction through hole selection method Active CN111965934B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010576117.XA CN111965934B (en) 2020-06-22 2020-06-22 OPC correction through hole selection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010576117.XA CN111965934B (en) 2020-06-22 2020-06-22 OPC correction through hole selection method

Publications (2)

Publication Number Publication Date
CN111965934A CN111965934A (en) 2020-11-20
CN111965934B true CN111965934B (en) 2024-01-23

Family

ID=73361828

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010576117.XA Active CN111965934B (en) 2020-06-22 2020-06-22 OPC correction through hole selection method

Country Status (1)

Country Link
CN (1) CN111965934B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090076138A (en) * 2008-01-07 2009-07-13 주식회사 하이닉스반도체 Optical proximity correction method
CN108107670A (en) * 2017-12-15 2018-06-01 上海华力微电子有限公司 The method for improving via layer OPC precision
CN109459912A (en) * 2018-12-29 2019-03-12 上海华力集成电路制造有限公司 A kind of OPC method for sorting out aperture layer with feature vector
CN109709762A (en) * 2018-12-29 2019-05-03 上海华力集成电路制造有限公司 A kind of OPC modification method of via layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7617475B2 (en) * 2006-11-13 2009-11-10 United Microelectronics Corp. Method of manufacturing photomask and method of repairing optical proximity correction
US8524424B2 (en) * 2011-10-20 2013-09-03 Windbond Electronics Corp. Optical proximity correction photomask
CN103376643B (en) * 2012-04-17 2015-10-14 中芯国际集成电路制造(上海)有限公司 Correct the method for layout graph

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090076138A (en) * 2008-01-07 2009-07-13 주식회사 하이닉스반도체 Optical proximity correction method
CN108107670A (en) * 2017-12-15 2018-06-01 上海华力微电子有限公司 The method for improving via layer OPC precision
CN109459912A (en) * 2018-12-29 2019-03-12 上海华力集成电路制造有限公司 A kind of OPC method for sorting out aperture layer with feature vector
CN109709762A (en) * 2018-12-29 2019-05-03 上海华力集成电路制造有限公司 A kind of OPC modification method of via layer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Miyamoto, E等.Design for charge transport property of positive-charging-type single-layer OPC photoreceptorDesign for charge transport property of positive-charging-type single-layer OPC photoreceptor.《IS&T'S NIP20: INTERNATIONAL CONFERENCE ON DIGITAL PRINTING TECHNOLOGIES, PROCEEDINGS》.2004,第497-500页. *
The comparison of various strategies of setting up an OPC repair flow with respect to process window constraints;Yaojun Du等;《 SPIE Advanced Lithography》;第9426卷;第94261W页 *

Also Published As

Publication number Publication date
CN111965934A (en) 2020-11-20

Similar Documents

Publication Publication Date Title
CN108333865B (en) Method for correcting mask graph
CN106468853B (en) OPC for perceiving surroundings
US8788983B2 (en) Method for correcting layout pattern and mask thereof
US7063923B2 (en) Optical proximity correction method
CN110119062B (en) Optical proximity correction method, mask manufacturing method and patterning process
US20130244427A1 (en) Methods of making jogged layout routings double patterning compliant
US6544699B1 (en) Method to improve accuracy of model-based optical proximity correction
KR102185558B1 (en) Method for optical proximity correction
CN110880181A (en) Layout pattern dividing method, optical proximity correction method, and semiconductor device manufacturing method
US7820346B2 (en) Method for collecting optical proximity correction parameter
CN102117010B (en) Optical adjacent correcting method
CN114326290A (en) Optical proximity correction method
CN109426083B (en) Optimization method of photoetching process, optimization system thereof and photoetching method
CN112241102A (en) Optical proximity correction, photomask manufacturing and imaging method
US6350977B2 (en) Pattern distortion detecting method and apparatus and recording medium for pattern distortion detection
CN104166304B (en) Method for correcting auxiliary pattern
US7745067B2 (en) Method for performing place-and-route of contacts and vias in technologies with forbidden pitch requirements
CN101526735B (en) Designing method of photo-mask and method of manufacturing semiconductor device using the photo-mask
CN110968981B (en) Integrated circuit layout generation method and system
US10002827B2 (en) Method for selective re-routing of selected areas in a target layer and in adjacent interconnecting layers of an IC device
US20230325579A1 (en) Geometric Mask Rule Check With Favorable and Unfavorable Zones
US6998205B2 (en) Optical proximity correction method
CN111965934B (en) OPC correction through hole selection method
US6787272B2 (en) Assist feature for random, isolated, semi-dense, and other non-dense contacts
CN110221514B (en) Optical proximity correction method and manufacturing method of mask

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant