CN106435725A - Exhaust device capable of reducing carbon content of head of polycrystalline silicon ingot - Google Patents
Exhaust device capable of reducing carbon content of head of polycrystalline silicon ingot Download PDFInfo
- Publication number
- CN106435725A CN106435725A CN201610981663.5A CN201610981663A CN106435725A CN 106435725 A CN106435725 A CN 106435725A CN 201610981663 A CN201610981663 A CN 201610981663A CN 106435725 A CN106435725 A CN 106435725A
- Authority
- CN
- China
- Prior art keywords
- pipe
- connecting tube
- exhaust
- tube
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 238000009413 insulation Methods 0.000 claims abstract description 13
- 238000009423 ventilation Methods 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000010257 thawing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000233855 Orchidaceae Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to an exhaust device capable of reducing the carbon content of the head of a polycrystalline silicon ingot. The exhaust device comprises a thermal insulation cage, wherein a top plate is arranged at the top of the thermal insulation cage; an exhaust pipe assembly is arranged on the top plate and comprises main exhaust pipes, first connecting pipes, a second connecting pipe and an OT connecting pipe; each main exhaust pipe comprises a main breather pipe, a ring buckle and an expansion pipe; each first connecting pipe comprises a primary pipe, a secondary pipe and a casing pipe; a quarter bend is arranged between each of the first connecting pipes and the second connecting pipe and the corresponding main exhaust pipe; a three-way bend is arranged among the two first connecting pipes and the corresponding main exhaust pipe; a gas collecting box is arranged between one first connecting pipe and the second connecting pipe and comprises a box body and a box cover, a plurality of positioning holes are formed in the box cover, and fixing bolts are arranged in the positioning holes. The exhaust device can well remove carbon impurities at the upper part of the ingot and solves the problem of poor second-stage impurity removal effect due to the fact that impurity removal can only depend on side exhaust at present.
Description
Technical field
The present invention relates to a kind of exhaust apparatus reducing polycrystalline silicon ingot head carbon content, belong to photovoltaic polysilicon casting skill
Art field.
Background technology
Polycrystalline silicon ingot or purifying furnace is mainly used in the big production of solar-grade polysilicon ingot, and it adopts advanced polysilicon orientation solidifying
Gu technology, after silicon material high-temperature fusion, condensation-crystallization will be oriented by special process, thus reaching manufacture of solar cells polycrystalline
The requirement of silicon quality, is that one kind is applied to long time continuous working, in high precision, the intellectuality of high reliability, high degree of automation
Big production equipment.Existing polycrystalline furnace mainly passes through the discharge duct of furnace chamber sidepiece, and the impurity within furnace chamber is excluded outward, but
It is because furnace chamber heat-insulation cage is in closure state in heating and thawing stage, depend merely on sidepiece aerofluxuss and cannot preferably exclude silicon
Impurity within ingot, is particularly at the carbon impurity on crystal ingot top, thus affecting ingot quality.
Content of the invention
The purpose of the present invention is the defect for prior art, provides a kind of row reducing polycrystalline silicon ingot head carbon content
Device of air, can be good at by crystal ingot top carbon impurity exclusion, solve originally can only rely on sidepiece aerofluxuss impurities removal, second phase row
The situation of miscellaneous effect difference.
The present invention is achieved by the following technical solutions：
A kind of exhaust apparatus reducing polycrystalline silicon ingot head carbon content, including heat-insulation cage, described heat-insulation cage top is provided with top board,
Described top board is provided with exhaust pipe assembly, and wherein, described exhaust pipe assembly includes main exhaust, the first connecting tube, the second connection
Pipe and OT connecting tube, described main exhaust includes main breather, latch closure and telescoping tube, and described main ventilation bottom of the tube is provided with flange,
Described telescoping tube and latch closure inwall are all coordinated with main ventilation pipe outer wall, and described first connecting tube has two, described first connecting tube
Including one-level pipe, diode and sleeve pipe；
It is equipped with elbow bend, two the first connecting tubes and master between described first connecting tube and the second connecting tube and main exhaust
Be provided with three-way elbow between exhaustor, between described first connecting tube and the second connecting tube, be provided with gather qi together box, described one-level pipe and
Between diode end and internal surface of sleeve pipe, between the first connecting tube and the second connecting tube and elbow bend, the second connecting tube with poly-
It is equipped with screw thread cooperation between gas box；
Described gather qi together box includes box body and lid, and described lid is provided with some location holes, and described positioning in the hole is provided with fixing spiral shell
Bolt, described fixing bolt is provided with attaching nut, and described OT is connected bottom of the tube and is connected with lid.
A kind of above-mentioned exhaust apparatus reducing polycrystalline silicon ingot head carbon content, wherein, described main breather is externally provided with convex
Platform, described boss is connected with flange, is provided with screw thread cooperation between described flexible inside pipe wall and main ventilation inside pipe wall top.
A kind of above-mentioned exhaust apparatus reducing polycrystalline silicon ingot head carbon content, wherein, described positioning number is 4, and is in square
Shape is distributed, and positioning is with diameter greater than fixing bolt diameter.
A kind of above-mentioned exhaust apparatus reducing polycrystalline silicon ingot head carbon content, wherein, described one-level pipe, diode and the
It is equipped with support column, described support column top is provided with arc-shaped notch, described arc-shaped notch and one-level between two connecting tubes and top board
Pipe, diode and second connect bottom of the tube cooperation.
Beneficial effects of the present invention are：
Because positioning is with diameter greater than fixing bolt diameter, lid can be adjusted from four direction, make OT connecting tube and upper furnace chamber
OT hole is docked, so that whole exhaust pipe assembly, when heat-insulation cage is in closure state in heating and thawing stage, excludes position
Carbon impurity in crystal ingot top.
Spacing by latch closure, telescoping tube can be made outside main breather, be adjusted to suitable location by screw thread cooperation, thus
Change main exhaust length；Coordinated by screw thread, between rotatable regulation one-level pipe and diode end and internal surface of sleeve pipe, first
Between connecting tube and the second connecting tube and elbow bend, the distance between the second connecting tube and gather qi together box, by supporting column section
Support prevents shedding.
To sum up, present configuration is reasonable in design, can be good at by crystal ingot top carbon impurity exclusion, solve original only
Sidepiece aerofluxuss impurities removal, the situation of the second stage of impurities removal effect difference can be relied on.
Brief description
Fig. 1 is present configuration schematic diagram.
Fig. 2 is main exhaust installation diagram of the present invention.
Fig. 3 is the box-packed figure of gather qi together of the present invention.
（In figure, heat-insulation cage 1, top board 2, exhaust pipe assembly 3, main exhaust 4, the first connecting tube 5, the second connecting tube 6 and OT
Connecting tube 7, main breather 8, latch closure 9 and telescoping tube 10, flange 11, boss 12, one-level pipe 13, diode 14 and sleeve pipe 15, directly
Angle elbow 16, three-way elbow 17, gather qi together box 18, box body 19 and lid 20, location hole 21, fixing bolt 22, attaching nut 23,
Dagger 24, arc-shaped notch 25, side port 26, the first bound edge 27, the second bound edge 28）.
Specific embodiment
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is described further.
A kind of exhaust apparatus reducing polycrystalline silicon ingot head carbon content, including heat-insulation cage, described heat-insulation cage top is provided with
Top board, described top board is provided with exhaust pipe assembly, wherein, described exhaust pipe assembly include main exhaust, the first connecting tube, second
Connecting tube and OT connecting tube, described main exhaust includes main breather, latch closure and telescoping tube, and described main ventilation bottom of the tube is provided with method
Orchid, described main breather is externally provided with boss, and described boss is connected with flange, described flexible inside pipe wall with main ventilation inside pipe wall top
Between be provided with screw thread cooperation, described telescoping tube and latch closure inwall are all coordinated with main pipe outer wall of ventilating, and described first connecting tube has two
Individual, described first connecting tube includes one-level pipe, diode and sleeve pipe；
It is equipped with elbow bend, two the first connecting tubes and master between described first connecting tube and the second connecting tube and main exhaust
Be provided with three-way elbow between exhaustor, between described first connecting tube and the second connecting tube, be provided with gather qi together box, described one-level pipe and
Between diode end and internal surface of sleeve pipe, between the first connecting tube and the second connecting tube and elbow bend, the second connecting tube with poly-
It is equipped with screw thread cooperation between gas box；
Described gather qi together box includes box body and lid, and described lid is provided with location hole, and described positioning number is 4, and rectangular
Distribution, described positioning in the hole is provided with fixing bolt, and with diameter greater than fixing bolt diameter, described fixing bolt is provided with cooperation to positioning
Nut, described OT is connected bottom of the tube and is connected with lid；
It is equipped with support column, described support column top is provided with arc between described one-level pipe, diode and the second connecting tube and top board
Shape recess, described arc-shaped notch is connected bottom of the tube cooperation with one-level pipe, diode and second；
Described heat-insulation cage side bottom is provided with some side ports, some side port uniform intervals settings, and described side port is provided with
First bound edge, described first bound edge is in inverted U-shaped, is provided with the second bound edge, described second bound edge section at the corner of described heat-insulated bottom
It is provided with the v-shaped structure of chamfering in bottom.
The working method of the present invention is：
Because positioning is with diameter greater than fixing bolt diameter, lid can be adjusted from four direction, make OT connecting tube and upper furnace chamber
OT hole is docked, so that whole exhaust pipe assembly, when heat-insulation cage is in closure state in heating and thawing stage, excludes position
In the carbon impurity on crystal ingot top, sidepiece aerofluxuss are carried out by side port, and good exhaust effect, bound edge lifting rigidity.
Experimental verification：Former sidepiece aerofluxuss head carbon content is 8-9ppma, is reduced to 5-6 using this device head carbon content
Individual ppma, crystal ingot Surface Edge smooth；Brilliant brick section Hard Inclusion is reduced to 1.3% by 2%.
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto,
Any those familiar with the art the invention discloses technical scope in, the change or replacement that can readily occur in,
All should cover within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection domain of claims
It is defined.
Claims (4)
1. a kind of exhaust apparatus reducing polycrystalline silicon ingot head carbon content, including heat-insulation cage, described heat-insulation cage top is provided with top
Plate, described top board is provided with exhaust pipe assembly, it is characterized by, described exhaust pipe assembly include main exhaust, the first connecting tube,
Two connecting tubes and OT connecting tube, described main exhaust includes main breather, latch closure and telescoping tube, and described main ventilation bottom of the tube is provided with
Flange, described telescoping tube and latch closure inwall are all coordinated with main ventilation pipe outer wall, and described first connecting tube has two, and described first even
Adapter includes one-level pipe, diode and sleeve pipe；
It is equipped with elbow bend, two the first connecting tubes and master between described first connecting tube and the second connecting tube and main exhaust
Be provided with three-way elbow between exhaustor, between described first connecting tube and the second connecting tube, be provided with gather qi together box, described one-level pipe and
Between diode end and internal surface of sleeve pipe, between the first connecting tube and the second connecting tube and elbow bend, the second connecting tube with poly-
It is equipped with screw thread cooperation between gas box；
Described gather qi together box includes box body and lid, and described lid is provided with some location holes, and described positioning in the hole is provided with fixing spiral shell
Bolt, described fixing bolt is provided with attaching nut, and described OT is connected bottom of the tube and is connected with lid.
2. as claimed in claim 1 a kind of reduce polycrystalline silicon ingot head carbon content exhaust apparatus, it is characterized by, described master
Breather is externally provided with boss, and described boss is connected with flange, is provided between described flexible inside pipe wall and main ventilation inside pipe wall top
Screw thread coordinates.
3. as claimed in claim 1 a kind of reduce polycrystalline silicon ingot head carbon content exhaust apparatus, it is characterized by, described fixed
Bits number is 4, and rectangular distribution, and positioning is with diameter greater than fixing bolt diameter.
4. as claimed in claim 1 a kind of reduce polycrystalline silicon ingot head carbon content exhaust apparatus, it is characterized by, described one
It is equipped with support column, described support column top is provided with arc-shaped notch, described between level pipe, diode and the second connecting tube and top board
Arc-shaped notch is connected bottom of the tube cooperation with one-level pipe, diode and second.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610981663.5A CN106435725B (en) | 2016-11-09 | 2016-11-09 | A kind of exhaust apparatus reducing polycrystalline silicon ingot head carbon content |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610981663.5A CN106435725B (en) | 2016-11-09 | 2016-11-09 | A kind of exhaust apparatus reducing polycrystalline silicon ingot head carbon content |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106435725A true CN106435725A (en) | 2017-02-22 |
| CN106435725B CN106435725B (en) | 2018-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610981663.5A Active CN106435725B (en) | 2016-11-09 | 2016-11-09 | A kind of exhaust apparatus reducing polycrystalline silicon ingot head carbon content |
Country Status (1)
| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203559157U (en) * | 2013-10-29 | 2014-04-23 | 英利能源（中国）有限公司 | Bilateral exhaust device for ingot furnace |
| CN203683725U (en) * | 2014-02-12 | 2014-07-02 | 鞍山塞诺达碳纤维有限公司 | Carbon fiber heat preserving carrier plate with exhausting device for polycrystalline silicon ingot furnace |
| CN105088338A (en) * | 2015-08-14 | 2015-11-25 | 晶科能源有限公司 | Polycrystal ingot furnace and exhaust device |
-
2016
- 2016-11-09 CN CN201610981663.5A patent/CN106435725B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203559157U (en) * | 2013-10-29 | 2014-04-23 | 英利能源（中国）有限公司 | Bilateral exhaust device for ingot furnace |
| CN203683725U (en) * | 2014-02-12 | 2014-07-02 | 鞍山塞诺达碳纤维有限公司 | Carbon fiber heat preserving carrier plate with exhausting device for polycrystalline silicon ingot furnace |
| CN105088338A (en) * | 2015-08-14 | 2015-11-25 | 晶科能源有限公司 | Polycrystal ingot furnace and exhaust device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106435725B (en) | 2018-09-28 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Exhaust device capable of reducing carbon content of head of polycrystalline silicon ingot Effective date of registration: 20191113 Granted publication date: 20180928 Pledgee: China Everbright Bank, Limited by Share Ltd, Nanjing branch Pledgor: Zhenjiang Huantai Silicon Technology Co., Ltd. Registration number: Y2019320000279 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20210127 Granted publication date: 20180928 Pledgee: China Everbright Bank Limited by Share Ltd. Nanjing branch Pledgor: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd. Registration number: Y2019320000279 |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210210 Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 212200 new materials Industrial Park, Youfang Town, Yangzhong City, Zhenjiang City, Jiangsu Province Patentee before: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co., Ltd Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee before: Jiangsu Meike Solar Energy Technology Co., Ltd |