CN203602709U - Gas transmission device for deposition of silicon-based polysilicon film - Google Patents
Gas transmission device for deposition of silicon-based polysilicon film Download PDFInfo
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- CN203602709U CN203602709U CN201320780569.5U CN201320780569U CN203602709U CN 203602709 U CN203602709 U CN 203602709U CN 201320780569 U CN201320780569 U CN 201320780569U CN 203602709 U CN203602709 U CN 203602709U
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- Prior art keywords
- pneumatic tube
- polysilicon film
- diameter
- delivery mechanism
- silica
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- 230000008021 deposition Effects 0.000 title claims abstract description 28
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 18
- 229910052710 silicon Inorganic materials 0.000 title abstract description 18
- 239000010703 silicon Substances 0.000 title abstract description 18
- 230000005540 biological transmission Effects 0.000 title abstract 4
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 238000005247 gettering Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a gas transmission device for deposition of a silicon-based polysilicon film. The gas transmission device comprises a main gas pipe, a center conduction tube and an auxiliary gas pipe, wherein the main gas pipe is a reducing pipe which has a large upper diameter and a small lower diameter, the upper end of the main gas pipe is closed, and the lower end of the main gas pipe is provided with a gas inlet; the auxiliary gas pipe is supported by a reinforcing rod, the upper end of the auxiliary gas pipe is closed, the lower end of the auxiliary gas pipe is connected to the upper part of a diameter reducing part of the main gas pipe through the center conduction tube; a plurality of vent holes are respectively formed in the side surfaces of the main gas pipe and the auxiliary gas pipe. By adopting an 8-inch silicon-based polysilicon film deposited by the gas transmission device disclosed by the utility model, the membranous gettering performance is excellent, and the aim of process simplification, quality improvement and cost reduction is truly achieved.
Description
Technical field
The utility model relates to a kind of charge delivery mechanism for silica-based polysilicon film deposition, is specially adapted to the deposition process of 8 inches of silica-based polysilicon films in LPCVD vertical furnace.
Background technology
In modern information society, microelectronics is the basis of modern high technology industry development.And the semiconductor material complementing one another with semiconductor silicon material, compound semiconductor and germanium material is the basic function material that supports electronic technology, wherein, silicon is again semiconductor material most important, that be most widely used.More than 90% large-scale integrated circuit (LST), super large-scale integration (VLSI) are to be all produced in the silicon-based substrate of high-purity high-quality.
Along with developing rapidly of domestic IC industry, the demand of silicon-based substrate material is also increasing, and specification of quality is also more and more higher.In order to make the more silicon-based substrate material of high-quality, introduce gettering process, form a clean area on unicircuit (IC) surface.Traditional gettering process is divided into two kinds of intrinsic gettering and outer getterings, but this all bad control of two kinds of methods, along with the continuous research of people to gettering, last utility model enhancement type gettering, at backside deposition one deck polysilicon of silicon substrate material.Due to the difference of coefficient of thermal expansion and contraction, the surface of bi-material all can be subject to the effect of certain stress, according to the formation mechanism of the defect of crystals, the defect of crystals is by the regional centralized to stress enrichment, the gas phase diffusion that simultaneously Sauerstoffatom in silicon-based substrate material bodies and metal also can be outside crystal, thus will there is clean area at the upper layer of silicon-based substrate.
Along with the development of semiconductor technology, silicon-based substrate scantling is increasing and quality is also increasing, is progressively transitioned into 8 inches of silicon-based substrate.Traditional 4,5,6 inches of horizontal stove polycrystalline deposition methods cannot complete the processing request of 8 inches of polysilicons.Because polysilicon gettering effect is better, the deposition method of 8 inches of polysilicons also becomes a constantly problem for research.Relatively more conventional is LPCVD vertical furnace depositional mode now.Although vertical furnace can meet the requirement of 8 inches of depositions, but existing vertical furnace adopts the mode of fire door one end air inlet more, design temperature gradient, although the polycrystalline film thickness being deposited like this can be consistent, but the homogeneity of film and gettering ability are different, cause quality product inconsistent.In order to improve the consistence of quality, take again afterwards the mode of three sections of air inlets, although can solve thermograde and membranous problem, scrap build cost, installation and maintenance and technique adjustment are also very complicated, tooling cost is high.
Utility model content
The purpose of this utility model is to provide a kind of charge delivery mechanism for silica-based polysilicon film deposition, and this apparatus structure is simple, is applicable to the deposition process of 8 inches of silica-based polysilicon films in LPCVD vertical furnace.
For achieving the above object, the utility model is by the following technical solutions:
For a charge delivery mechanism for silica-based polysilicon film deposition, comprise main pneumatic tube, center conducting tube and secondary pneumatic tube, wherein, this main pneumatic tube is the little taper(ed)pipe of the large lower diameter of upper diameter, its upper end closed, lower end has inlet mouth; This pair pneumatic tube supports by reinforcing rod, its upper end closed, and lower end is communicated with the top at the reducing place of main pneumatic tube by center conducting tube; On the side of this main pneumatic tube and secondary pneumatic tube, be respectively equipped with several production wells.
Preferably, the profile of described center conducting tube is arc, and its radian is 120 degree.
Preferably, the whole height of described charge delivery mechanism is 1010.0～1030.0mm.
Preferably, the length of described main pneumatic tube is 815.0～825.0mm, and wall thickness is 1.3～1.7mm, and its upper diameter is 8.0～10.0mm.
Preferably, the production well quantity on described main pneumatic tube is 6, and spacing is 24.0～26.0mm, and the diameter of production well is 2.8～3.2mm.
Preferably, the diameter of described inlet mouth is 3.0～3.5mm, and on the described main pneumatic tube of this inlet mouth distance, the distance of production well is bottom 538.0～540.0mm.
Preferably, the length of described secondary pneumatic tube is 610.0～630.0mm, and wall thickness is 1.3～1.7mm, and diameter is 6.0～8.0mm.
Preferably, the production well quantity on described secondary pneumatic tube is 4, and spacing is 49.0～50.0mm, and the diameter of production well is 2.8～3.2mm.
Preferably, the wall thickness of described center conducting tube is 1.3～1.7mm, and diameter is 8.0～10.0mm, and on the described secondary pneumatic tube of its distance, the distance of production well is bottom 430.0～450.0mm.
The utility model has the advantage of:
Charge delivery mechanism of the present utility model is simple in structure, only this device need be directly installed on original vertical furnace, without equipment is transformed, can meet 8 inches of polycrystalline depositions, reaches constant temperature deposition, and technique adjustment is simple.Meanwhile, adopt vertical body of heater, silica-based horizontal positioned, has thoroughly solved a difficult problem that collapses limit and the deposition marking in traditional technology process.
Accompanying drawing explanation
Fig. 1 is the structural representation of charge delivery mechanism of the present utility model.
Fig. 2 is the vertical view of charge delivery mechanism of the present utility model.
Fig. 3 is the structure diagram that the vertical furnace of charge delivery mechanism of the present utility model is installed.
Fig. 4 is the process flow sheet of polysilicon film deposition.
Embodiment
As shown in Figure 1, charge delivery mechanism of the present utility model comprises main pneumatic tube 1, center conducting tube 2 and secondary pneumatic tube 3, wherein, main pneumatic tube 1 is the little taper(ed)pipe of the large lower diameter of upper diameter, its upper end closed, lower end has inlet mouth 4, and this inlet mouth 4 connects gas source by pipeline 5; Secondary pneumatic tube 3 supports 6 by reinforcing rod, its upper end closed, and lower end is communicated with the top at the reducing place 7 of main pneumatic tube 1 by center conducting tube 2; On the side of main pneumatic tube 1 and secondary pneumatic tube 3, be respectively equipped with several production wells 8,9.
As shown in Figure 2, the configuration design camber of center conducting tube 2, its radian is 120 degree.By this structure design, when charge delivery mechanism of the present utility model is arranged on vertical furnace, as shown in Figure 3, main pneumatic tube 1 and secondary pneumatic tube 3 are positioned at the both sides of reaction cavity 10 silicon chip supporting regions 11, make to be more evenly distributed from this charge delivery mechanism expellant gas.
Charge delivery mechanism of the present utility model, the parameter of all parts can be adjusted according to actual needs, by adjusting the distribution of production well on main pneumatic tube and secondary pneumatic tube, and the size of production well controls the flow and the flow velocity that are transported to the gas in reaction cavity, thereby in reaction cavity, form a stable gas model.
For the vertical furnace for the production of 8 inches of silica-based polysilicon films, the whole height of this charge delivery mechanism is in the scope of 1010.0～1030.0mm.The length of main pneumatic tube is 815.0～825.0mm, and wall thickness is 1.3～1.7mm, and its upper diameter is 8.0～10.0mm.Production well quantity on main pneumatic tube is 6, and spacing is 24.0～26.0mm, and the diameter of production well is 2.8～3.2mm.The diameter of inlet mouth is 3.0～3.5mm, and on the main pneumatic tube of this inlet mouth distance, the distance of production well is bottom 538.0～540.0mm.
The length of secondary pneumatic tube is 610.0～630.0mm, and wall thickness is 1.3～1.7mm, and diameter is 6.0～8.0mm.Production well quantity on secondary pneumatic tube is 4, and spacing is 49.0～50.0mm, and the diameter of production well is 2.8～3.2mm.
The wall thickness of center conducting tube is 1.3～1.7mm, and diameter is 8.0～10.0mm, and its distance apart from production well bottom on secondary pneumatic tube is 430.0～450.0mm.
As shown in Figure 4, in the time adopting charge delivery mechanism of the present utility model to carry out the deposition of polysilicon film, first charge delivery mechanism is loaded on vertical furnace, main pneumatic tube and secondary pneumatic tube are positioned at the both sides of silicon chip supporting region, inlet mouth quality of connection under meter and silane gas source; Silicon chip reference surface is managed upward with rewinder, pack in reaction cavity; Set temperature, deposition pressure, silane flow rate and boat rotating speed in deposition chamber, logical silane gas, deposit spathic silicon film in silicon-based substrate.After deposition, close silane gas, carry out cavity purification; Take out silicon chip, carry out that surface is detected, thickness is tested, according to homogeneity in SEMI criterion calculation sheet and between sheet; Take out 1 and carry out clean area, corrosion test surface thickness.
Adopt 8 inches of silica-based polysilicon films of charge delivery mechanism deposition of the present utility model, membranous gettering performance is very good, in the time of deposition 8000 dust, front can form the clean area of 80 μ m, can realize 150 (originally depositing 100) of every stove deposition, homogeneity is all less than 2% (customer requirement is 10%) in sheet and between sheet, production capacity promotes 50%, monolithic cost more than 60%, really reached that work simplification, quality promote and the object of cost.
Claims (9)
1. for a charge delivery mechanism for silica-based polysilicon film deposition, it is characterized in that, comprise main pneumatic tube, center conducting tube and secondary pneumatic tube, wherein, this main pneumatic tube is the little taper(ed)pipe of the large lower diameter of upper diameter, its upper end closed, and lower end has inlet mouth; This pair pneumatic tube supports by reinforcing rod, its upper end closed, and lower end is communicated with the top at the reducing place of main pneumatic tube by center conducting tube; On the side of this main pneumatic tube and secondary pneumatic tube, be respectively equipped with several production wells.
2. the charge delivery mechanism for silica-based polysilicon film deposition according to claim 1, is characterized in that, the profile of described center conducting tube is arc, and its radian is 120 degree.
3. the charge delivery mechanism for silica-based polysilicon film deposition according to claim 1 and 2, is characterized in that, the whole height of described charge delivery mechanism is 1010.0～1030.0mm.
4. the charge delivery mechanism for silica-based polysilicon film deposition according to claim 1 and 2, is characterized in that, the length of described main pneumatic tube is 815.0～825.0mm, and wall thickness is 1.3～1.7mm, and its upper diameter is 8.0～10.0mm.
5. the charge delivery mechanism for silica-based polysilicon film deposition according to claim 1 and 2, is characterized in that, the production well quantity on described main pneumatic tube is 6, and spacing is 24.0～26.0mm, and the diameter of production well is 2.8～3.2mm.
6. the charge delivery mechanism for silica-based polysilicon film deposition according to claim 1 and 2, it is characterized in that, the diameter of described inlet mouth is 3.0～3.5mm, and on the described main pneumatic tube of this inlet mouth distance, the distance of production well is bottom 538.0～540.0mm.
7. the charge delivery mechanism for silica-based polysilicon film deposition according to claim 1 and 2, is characterized in that, the length of described secondary pneumatic tube is 610.0～630.0mm, and wall thickness is 1.3～1.7mm, and diameter is 6.0～8.0mm.
8. the charge delivery mechanism for silica-based polysilicon film deposition according to claim 1 and 2, is characterized in that, the production well quantity on described secondary pneumatic tube is 4, and spacing is 49.0～50.0mm, and the diameter of production well is 2.8～3.2mm.
9. the charge delivery mechanism for silica-based polysilicon film deposition according to claim 1 and 2, it is characterized in that, the wall thickness of described center conducting tube is 1.3～1.7mm, and diameter is 8.0～10.0mm, and on the described secondary pneumatic tube of its distance, the distance of production well is bottom 430.0～450.0mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320780569.5U CN203602709U (en) | 2013-12-02 | 2013-12-02 | Gas transmission device for deposition of silicon-based polysilicon film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320780569.5U CN203602709U (en) | 2013-12-02 | 2013-12-02 | Gas transmission device for deposition of silicon-based polysilicon film |
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| Publication Number | Publication Date |
|---|---|
| CN203602709U true CN203602709U (en) | 2014-05-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320780569.5U Expired - Lifetime CN203602709U (en) | 2013-12-02 | 2013-12-02 | Gas transmission device for deposition of silicon-based polysilicon film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104674184A (en) * | 2013-12-02 | 2015-06-03 | 有研新材料股份有限公司 | Gas conveying device and deposition method for silica-based polycrystalline silicon membrane deposition |
-
2013
- 2013-12-02 CN CN201320780569.5U patent/CN203602709U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104674184A (en) * | 2013-12-02 | 2015-06-03 | 有研新材料股份有限公司 | Gas conveying device and deposition method for silica-based polycrystalline silicon membrane deposition |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150611 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150611 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM ADVANCED MATERIALS CO.,LTD. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140521 |