CN106435230B - A kind of metallized film preparation method - Google Patents
A kind of metallized film preparation method Download PDFInfo
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- CN106435230B CN106435230B CN201610732825.1A CN201610732825A CN106435230B CN 106435230 B CN106435230 B CN 106435230B CN 201610732825 A CN201610732825 A CN 201610732825A CN 106435230 B CN106435230 B CN 106435230B
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- 239000011104 metalized film Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims abstract description 18
- 239000002994 raw material Substances 0.000 claims abstract description 13
- 229910052718 tin Inorganic materials 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 8
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 8
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 4
- 238000002844 melting Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 239000011734 sodium Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 15
- 239000003921 oil Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 7
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000011591 potassium Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000003723 Smelting Methods 0.000 claims description 5
- 210000002469 basement membrane Anatomy 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 229910052571 earthenware Inorganic materials 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 abstract description 13
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 230000006378 damage Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 5
- 238000002604 ultrasonography Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000009835 boiling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007499 fusion processing Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003251 Na K Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/026—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/003—Alloys based on aluminium containing at least 2.6% of one or more of the elements: tin, lead, antimony, bismuth, cadmium, and titanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/015—Special provisions for self-healing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of metallized film preparation method, wire is made in Al, Sn, Na, K, Si melting, then raw material film is made by vacuum evaporation operation is carried out in wire feeding vacuum coating equipment, metallized film is made after cutting in raw material film.The self-healing energy of the metallized film is low, caloric value is small, the self-healing time is very short, the sensitivity of self-healing is very high, excellent is isolated to fault, it is small to the dielectric damage near fault, it is to avoid to occur the phenomenon that multilayer insulation medium Continuous Breakdown causes extensive burn, the service life of the metallized film is high, and security is good.When under hot environment of the metallized film at 85 ~ 100 DEG C in use, due to the metallized film can rapidly self-healing and caloric value is low, influence of the hot environment to the metallized film is small.
Description
Technical field
The present invention relates to a kind of metallized film preparation method, belong to capacitor technology field.
Background technology
Energy shortage and environmental degradation have become the globalization problem for threatening human survival, and development new energy is to realize people
The only way which must be passed of class sustainable development, China should Speeding up development utilize the paces of new energy, greatly develop new energy, it is progressively real
Now change from conventional energy resource to clean energy resource.
Progressively replaced with new energy traditional energy generated electricity by be electric power industry development from now on trend, generation of electricity by new energy
Mainly including in terms of solar power generation, wind-power electricity generation, biomass power generation, geothermal power generation, tidal power generation.
Urban track traffic refers to freight volume is big, speed fast, safety, on schedule, environmental protection, save the energy and land used etc.
The mode of transportation of feature, including subway, light rail, magnetic suspension, fast rail, tramcar, new traffic system etc..Therefore, in city rail
New energy is comprehensively utilized in road technical field of transportation also turns into the growth requirement of future city track traffic.
New-energy automobile refers to using unconventional vehicle fuel that as power resources new-energy automobile includes hybrid power
Automobile, pure electric automobile, fuel cell electric vehicle, hydrogen engine automobile, other new energy (such as high-efficiency energy-storage device, dimethyl ether)
The product of all categories such as automobile.
Either the field such as generation of electricity by new energy, new-energy automobile or urban track traffic, is all finally to want power equipment
Driving, changing or realizing, in power equipment, capacitor is important component therein as energy-storage travelling wave tube, especially new
The energy is as unconventional energy resource, during its comprehensive utilization, to traditional power equipment especially capacitor in volume, resistance to
Pressure, heatproof, resistance to rush of current, reliability, there is very high requirement in use time, at present in the world with metallic film capacitor
Its requirement is best suited, the material of this respect most critical is exactly metallized film.
The phenomenon that multilayer dielectricity Continuous Breakdown causes extensive burn easily occurs in self-healing for existing metallized film, is
This is avoided the occurrence of, some regularly arranged pole plate units are commonly designed, each pole plate unit is connected by safety fuse
The pole plate unit of surrounding is connect, it is this have the advantage that when any pole plate unit punctures, i.e., between capacitor film the two poles of the earth
Generation short circuit, so that discharge and produce electric arc, because the current-carrying capacity in safety fuse region is smaller, therefore can be prior to pole plate unit
And fuse, so as to avoid metallized film breakdown；But, the region still suffers from fault, one after safety fuse fuses
The denier zone current or voltage reach that to a certain degree the fault enclosure region will be breakdown, release substantial amounts of heat, easily to insulation
Film causes mechanical injuries, reduces the service life of metallized film.
The content of the invention
The present invention is in view of the deficienciess of the prior art, there is provided a kind of metallized film preparation method, particular technique side
Case is as follows：
A kind of metallized film preparation method, comprises the following steps：
Step 1: the making of wire
Aluminium ingot, tin slab, sodium ingot, potassium ingot and metallic silicon power are inserted in smelting furnace and be smelted into that alloy molten solution is made, is melted
Need to be passed through nitrogen protection gas during refining, when the temperature of alloy molten solution reaches 950 DEG C ± 5 DEG C, then pass through continuous metal cast process and drawing
Wire is made in silk technique；Wherein, the quality of the aluminium ingot:The quality of tin slab:The quality of sodium ingot:The quality of potassium ingot:Metallic silicon
The quality of powder=(80~82):(31~33):(7.3~7.6):(3.5~3.7):(0.22~0.28)；Na in the wire
Percentage by weight be a, 5.98%≤a≤6%；In the wire K percentage by weight be b, 2.87%≤b≤
2.92%；2 ＜ a/b ＜ 2.1；In the wire Si percentage by weight be c, 0.18%≤c≤0.22%, 40 ＜ (a+b)/
C ＜ 50；
Step 2: vacuum coating
By the wire feeder in vacuum coating equipment by wire send into evaporator crucible in, wire in evaporator crucible from
Molten metal is changed into metal vapors, and metal vapors carries out vacuum evaporation operation to insulating basement membrane in coating chamber and raw material film is made,
Metallized film is made after cutting in raw material film.
As the improvement of above-mentioned technical proposal, the outside of evaporator crucible is additionally provided with mounting groove in the step 2, installs
Supersonic generator and insulating oil are provided with groove；When carrying out vacuum evaporation operation, the frequency of supersonic generator is 30.8
~31.6KHz.
As the improvement of above-mentioned technical proposal, the purity of metallic silicon power is more than 99.9%, metallic silicon in the step one
The particle diameter of powder is less than 50 μm.
Beneficial effects of the present invention：The self-healing energy of the metallized film is low, and caloric value is small, and the self-healing time is very short, self-healing
Sensitivity it is very high, to fault isolate it is excellent, near fault dielectric damage it is small, even if the metal of the metallized film
Layer not design safety fuse, when dielectric causes its breakdown due to fault, the metallized film also can well oneself
More, it is to avoid occur the phenomenon that multilayer insulation medium Continuous Breakdown causes extensive burn, the service life of the metallized film is high,
Security is good.When under hot environment of the metallized film at 85~100 DEG C in use, because the metallized film can be quick
Self-healing and caloric value is low, influence of the hot environment to the metallized film is small.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
Embodiment 1
By 80Kg aluminium ingot, 31Kg tin slab, 7.3Kg sodium ingot, 3.5Kg potassium ingot and 0.22Kg purity be 99.9% and
Metallic silicon power of the particle diameter less than 50 μm, which is inserted in smelting furnace, be smelted into that alloy molten solution is made, and needs to be passed through nitrogen in fusion process
Gas shielded gas, wire is made when the temperature of alloy molten solution reaches 950 DEG C ± 5 DEG C, then by continuous metal cast process and drawing process；Should
Na percentage by weight (single component accounts for the mass percent of total component) is a, a=5.98% in wire, K in wire
Percentage by weight is b, b=2.87%, a/b=2.09；Si percentage by weight is c, c=0.18%, (a+b)/c in wire
=49；The fusing point of the wire is 415~435 DEG C.
Above-mentioned wire is sent into evaporator crucible by the wire feeder in vacuum coating equipment, wire is in evaporator crucible
In be changed into metal vapors from molten metal；Wherein, the outside of evaporator crucible is additionally provided with mounting groove, mounting groove and is provided with ultrasound
Wave producer and insulating oil；When carrying out vacuum evaporation operation, the frequency of supersonic generator is 30.8KHz, in insulating oil
Under effect, the molten metal in evaporator crucible is in vibrational state；Metal vapors carries out vacuum in coating chamber to insulating basement membrane
Raw material film is made in evaporation operation, and metallized film is made after cutting in raw material film.
Embodiment 2
It is by 81.3Kg aluminium ingot, 32.3Kg tin slab, 7.5Kg sodium ingot, 3.6Kg potassium ingot and 0.25Kg purity
99.9% and particle diameter be less than 50 μm of metallic silicon power and insert in smelting furnace and be smelted into that alloy molten solution is made, needed in fusion process
Nitrogen protection gas is passed through, is made when the temperature of alloy molten solution reaches 950 DEG C ± 5 DEG C, then by continuous metal cast process and drawing process
Wire；Na percentage by weight is a, a=6% in the wire, and K percentage by weight is b, b=2.88% in wire,
A/b=2.08；Si percentage by weight is c, c=0.2%, (a+b)/c=44.4 in wire；The fusing point of the wire is
413~431 DEG C.
Above-mentioned wire is sent into evaporator crucible by the wire feeder in vacuum coating equipment, wire is in evaporator crucible
In be changed into metal vapors from molten metal；Wherein, the outside of evaporator crucible is additionally provided with mounting groove, mounting groove and is provided with ultrasound
Wave producer and insulating oil；When carrying out vacuum evaporation operation, the frequency of supersonic generator is 31KHz, in the work of insulating oil
Under, the molten metal in evaporator crucible is in vibrational state；Metal vapors carries out vacuum steaming in coating chamber to insulating basement membrane
Raw material film is made in plating operation, and metallized film is made after cutting in raw material film.
Embodiment 3
By 82Kg aluminium ingot, 33Kg tin slab, 7.6Kg sodium ingot, 3.7Kg potassium ingot and 0.28Kg purity be 99.9% and
Metallic silicon power of the particle diameter less than 50 μm, which is inserted in smelting furnace, be smelted into that alloy molten solution is made, and needs to be passed through nitrogen in fusion process
Gas shielded gas, wire is made when the temperature of alloy molten solution reaches 950 DEG C ± 5 DEG C, then by continuous metal cast process and drawing process；Should
Na percentage by weight is a, a=6% in wire, and K percentage by weight is b, b=2.92%, a/b=in wire
2.05；Si percentage by weight is c, c=0.22%, (a+b)/c=40.4 in wire；The fusing point of the wire be 410~
430℃。
Above-mentioned wire is sent into evaporator crucible by the wire feeder in vacuum coating equipment, wire is in evaporator crucible
In be changed into metal vapors from molten metal；Wherein, the outside of evaporator crucible is additionally provided with mounting groove, mounting groove and is provided with ultrasound
Wave producer and insulating oil；When carrying out vacuum evaporation operation, the frequency of supersonic generator is 31.6KHz, in insulating oil
Under effect, the molten metal in evaporator crucible is in vibrational state；Metal vapors carries out vacuum in coating chamber to insulating basement membrane
Raw material film is made in evaporation operation, and metallized film is made after cutting in raw material film.
In the above-described embodiments, in the manufacturing process of wire, continuous metal cast process is alloy molten solution constantly by water cooling
Crystallizer, is congealed into after duricrust and to be pulled straight from crystallizer lower exit port, and through water-spraying control, the casting of blank is all cut into after solidification
Technical process.Wire is made by drawing process again in blank.The wire being made up of continuous metal cast process and drawing process, joint
It is few, it is to avoid because welded wire causes Na, K and Sn changes of contents in wire.
Supersonic generator produces ultrasonic wave of the frequency for 30.8~31.6KHz and causes evaporation earthenware under the transmission of insulating oil
The molten metal that molten metal in crucible is in vibrational state, evaporator crucible can not only produce bubble, and bubble will be with ultrasound
Vibrate and be grown into and increase, then again unexpected to vanish and divide, the bubble after division is again continuous to be grown and vanish；These gas
Bubble generates HTHP when rapidly collapsing in bubble, and because the liquid at high speed around bubble pours bubble and near bubble
Liquid in generate strong local shock, acted on so as to generate the crushing of ultrasound, " mixings ", and in ultrasonic wave
Frequency sweep effect under, molten metal formation backflow so that the molten metal each group of unevaporated molten metal and critical condition
Divide well mixed, it is to avoid molten boiling point relatively low Na, K and Sn evaporate in advance, while avoiding the bottom deposit of evaporator crucible substantial amounts of
Al, it is ensured that each component content in the metal level formed after evaporation is equal with each component content of wire.Insulating oil is using conjunction
Into insulating oil, the medium that insulating oil is transmitted as ultrasonic wave, and insulating oil does not influence the use of evaporator crucible, it is to avoid evaporation earthenware
Short circuit occurs for crucible.The power output of supersonic generator is calculated according to the area of evaporator crucible, the output work of supersonic generator
It is every square centimeter that rate is maintained at 0.3~0.5W.The power output selection of supersonic generator is less than normal, then influences gold in evaporator crucible
Belong to the extent of vibration of liquation, cause plated film time partially long, influence formation efficiency, the power output selection of supersonic generator is inclined
Greatly, the molten metal vibration in evaporator crucible is violent, accelerates Na, K and Sn loss, influences coating quality.In evaporator crucible
It is raw material film that molten metal, which deposits on dielectric after evaporating and forms metal level, and the composition of metal level is identical with wire.
Due to the addition of Na, K and Sn of eutectic boiling point in the wire, especially Sn content is of a relatively high so that
The fusing point of wire is significantly reduced for fine aluminium silk；The wire is mixture, therefore without the melting point values determined, but have
One melting range is 410~435 DEG C, and for the fusing point of fine aluminium is 660 DEG C, the wire fusing point is low, it follows that
Required energy is significantly reduced for fine aluminium silk when wire fusing, gasification.Na and K are oxidizable, are passed through nitrogen protection
Gas avoids Na and K from aoxidizing.Na and K total content can not be too low, otherwise influences whether follow-up low energy self-healing；Na's and K is total
Content is higher, can cause the mechanical degradation of wire, and wire softens；Na and K can not only enter according to 2~2.1 ratio
One step promotes the fusing point of wire to reduce, and can also its formation Na-K alloy, influence wire shaping.It is micro by adding
Si, it is possible to resolve due to the defect for having added Na and K to cause its mechanical performance to reduce so that wire has superior anti-wear performance；
But, Si is difficult evaporation and Si is semiconductor, and its content can not too high influence subsequent metallisation film self-healing；Therefore must basis
Na and K total content determines Si addition.
The metal level being made is deposited using the wire, when there is fault in metal level, the mistake of metal level electric discharge self-healing
Cheng Shi：When electric current is by metal level, because semiconductive or insulating properties is presented in fault, the region nearer from fault, its electric current is close
Degree is bigger, and in the metallic electrode region close from fault, current density sharply rises to its Jiao Er heat energy by area's metal
Change the fusing of layer, cause between electrode arcing here, electric arc evaporates quickly and throwing dissipates molten metal at this, is formed without metal level
Be dielectrically separated from area, arc extinction realizes self-healing.Wherein, in molten metal evaporation process, due to Na and K molten boiling point very
It is low, next to that Sn, is finally that the Van der Waals force in Al, molten metal is destroyed in echelon, not only Na, K and Sn first evaporate so that
The region forms high resistance area, further promotes Al evaporations, the energy needed for evaporation is further reduced, also, high resistance area is circular
Fault formation, therefore high resistance area area is smaller；The evaporation time short i.e. self-healing time is very short during being somebody's turn to do, the sensitivity of self-healing
It is very high, excellent is isolated to fault, it is small to the dielectric damage near fault, and because metal level is that shape is deposited by wire
Into, for pure aluminum metal layer, the metal level self-healing energy is smaller, and generation multilayer insulation medium can be avoided continuously to hit
Wear the phenomenon for causing extensive burn.
Due to the addition of micro Si in the composition of metal level so that metal level has superior anti-wear performance, in cutting
Be difficult to be scratched in follow-up assembling process, it is ensured that the self-healing that the metallized film can be good.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (3)
1. a kind of metallized film preparation method, it is characterised in that comprise the following steps：
Step 1: the making of wire
Aluminium ingot, tin slab, sodium ingot, potassium ingot and metallic silicon power are inserted in smelting furnace and be smelted into that alloy molten solution is made, melting
Need to be passed through nitrogen protection gas in journey, when the temperature of alloy molten solution reaches 950 DEG C ± 5 DEG C, then pass through continuous metal cast process and wire drawer
Wire is made in skill；Wherein, the quality of the aluminium ingot:The quality of tin slab:The quality of sodium ingot:The quality of potassium ingot:Metallic silicon power
Quality=(80~82):(31~33):(7.3~7.6):(3.5~3.7):(0.22~0.28)；Na weight in the wire
Amount percentage is a, 5.98%≤a≤6%；K percentage by weight is b, 2.87%≤b≤2.92% in the wire；2 ＜
A/b ＜ 2.1；Si percentage by weight is c, 0.18%≤c≤0.22%, 40 ＜ (a+b)/c ＜ 50 in the wire；
Step 2: vacuum coating
Wire is sent into evaporator crucible by the wire feeder in vacuum coating equipment, wire is in evaporator crucible from metal
Liquation is changed into metal vapors, and metal vapors carries out vacuum evaporation operation to insulating basement membrane in coating chamber and raw material film, raw material is made
Metallized film is made after cutting in film.
2. a kind of metallized film preparation method according to claim 1, it is characterised in that：Earthenware is evaporated in the step 2
The outside of crucible is additionally provided with mounting groove, mounting groove and is provided with supersonic generator and insulating oil；Carrying out vacuum evaporation operation
When, the frequency of supersonic generator is 30.8~31.6KHz.
3. a kind of metallized film preparation method according to claim 1, it is characterised in that：Metallic silicon in the step one
The purity of powder is more than 99.9%, and the particle diameter of metallic silicon power is less than 50 μm.
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| CN1617267A (en) * | 2004-12-01 | 2005-05-18 | 戴国水 | Tin-zinc-aluminium alloy wire |
| CN101604577A (en) * | 2009-04-30 | 2009-12-16 | 杨文荣 | A kind of dry-type composite-dielectric filter capacitor |
| CN103680945A (en) * | 2013-11-19 | 2014-03-26 | 张家港市星河电子材料制造有限公司 | Aluminum zinc metallized film |
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| JP2015076223A (en) * | 2013-10-08 | 2015-04-20 | 株式会社Uacj | Aluminum alloy for negative electrode material of aluminum air battery, and aluminum air battery |
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| CN1617267A (en) * | 2004-12-01 | 2005-05-18 | 戴国水 | Tin-zinc-aluminium alloy wire |
| CN101604577A (en) * | 2009-04-30 | 2009-12-16 | 杨文荣 | A kind of dry-type composite-dielectric filter capacitor |
| CN103680945A (en) * | 2013-11-19 | 2014-03-26 | 张家港市星河电子材料制造有限公司 | Aluminum zinc metallized film |
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