CN106435230A - Manufacturing method of metallized films - Google Patents
Manufacturing method of metallized films Download PDFInfo
- Publication number
- CN106435230A CN106435230A CN201610732825.1A CN201610732825A CN106435230A CN 106435230 A CN106435230 A CN 106435230A CN 201610732825 A CN201610732825 A CN 201610732825A CN 106435230 A CN106435230 A CN 106435230A
- Authority
- CN
- China
- Prior art keywords
- wire
- metallized film
- ingot
- metal
- quality
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011104 metalized film Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 17
- 229910052718 tin Inorganic materials 0.000 claims abstract description 13
- 239000002994 raw material Substances 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 8
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 8
- 239000011734 sodium Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 14
- 239000003921 oil Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 8
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 7
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000011591 potassium Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000003723 Smelting Methods 0.000 claims description 5
- 210000002469 basement membrane Anatomy 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 229910052571 earthenware Inorganic materials 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 abstract description 13
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 230000006378 damage Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 8
- 230000006872 improvement Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000009835 boiling Methods 0.000 description 3
- 238000007499 fusion processing Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001883 metal evaporation Methods 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003251 Na K Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/026—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/003—Alloys based on aluminium containing at least 2.6% of one or more of the elements: tin, lead, antimony, bismuth, cadmium, and titanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/015—Special provisions for self-healing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a manufacturing method of metallized films. According to the method, Al, Sn, Na, K and Si are smelted, metal wires are prepared and then are sent into a vacuum coating machine for vacuum evaporation operation, raw material films are prepared and are cut, and the metallized films are prepared. The metallized films are low in self-healing energy, small in heating value, short in self-healing time, very high in self-healing sensitivity, excellent in defect isolation, small in damage to insulating media near defects, long in service life and good in safety, and the phenomenon of large-area burning caused by continuous breakdown of multiple layers of the insulating media is avoided. When the metallized films are used in environments at high temperatures ranging from 85 DEG C to 100 DEG C, the metallized films can realize rapid self-healing and are low in heating value, so that the effect of the high-temperature environments on the metallized films is small.
Description
Technical field
The present invention relates to a kind of metallized film preparation method, belong to capacitor technology field.
Background technology
Energy shortage and environmental degradation have become as the globalization problem threatening human survival, and development new forms of energy are to realize people
The only way which must be passed of class sustainable development, China should utilize the paces of new forms of energy by Speeding up development, greatly develop new forms of energy, progressively real
Now change from conventional energy resource to clean energy resource.
Progressively replace traditional energy carrying out generating electricity with new forms of energy will be the trend of electric power industry development from now on, generation of electricity by new energy
Mainly include the aspects such as solar electrical energy generation, wind-power electricity generation, biomass power generation, geothermal power generation, tidal power generation.
Urban track traffic refers to have that freight volume is big, speed fast, safety, on schedule, protection environment, save the energy and land used etc.
The mode of transportation of feature, including subway, light rail, magnetic suspension, fast rail, tramcar, new traffic system etc..Therefore, at city rail
Road technical field of transportation comprehensively utilizes the growth requirement that new forms of energy also become future city track traffic.
New-energy automobile refers to use unconventional vehicle fuel to include hybrid power as power resources, new-energy automobile
Automobile, pure electric automobile, FC-EV, hydrogen engine automobile, other new forms of energy（Such as high-efficiency energy-storage device, dimethyl ether）
The product of all categories such as automobile.
The fields such as either generation of electricity by new energy, new-energy automobile or urban track traffic, are finally all intended to power equipment
Driving, change or realizing, in power equipment, capacitor is vitals therein as energy-storage travelling wave tube, especially newly
The energy is as unconventional energy resource, during its comprehensive utilization, to traditional power equipment especially capacitor at volume, resistance to
Pressure, heatproof, resistance to rush of current, reliability, there is very high requirement on the use time, at present in the world with metallic film capacitor
Best suiting it to require, the material of this respect most critical is exactly metallized film.
Existing metallized film is susceptible to the phenomenon that multilayer dielectricity Continuous Breakdown causes extensive burn when self-healing, is
Avoiding the generation of this situation, being commonly designed some regularly arranged pole plate unit, each pole plate unit is by safety fuse even
Connecing the pole plate unit of surrounding, it this have the advantage that when arbitrary pole plate unit punctures, i.e. between capacitor film the two poles of the earth
It is short-circuited, thus discharges and produce electric arc, owing to the current-carrying capacity in safety fuse region is less, therefore can have precedence over pole plate unit
And fuse, thus avoid metallized film breakdown；But, after safety fuse fuses, this region still suffers from fault, and one
This zone current of denier or voltage reach to a certain degree, and this fault enclosure region, by breakdown, releases substantial amounts of heat, easily to insulation
Film causes mechanical injuries, reduces the service life of metallized film.
Content of the invention
The present invention is directed to the deficiency that prior art exists, provide a kind of metallized film preparation method, concrete technical side
Case is as follows：
A kind of metallized film preparation method, comprises the following steps：
Step one, making wiry
Carry out being smelted in aluminium ingot, tin slab, sodium ingot, potassium ingot and metallic silicon power are inserted smelting furnace and make alloy molten solution, melting
Journey needs be passed through nitrogen protection gas, when the temperature of alloy molten solution reaches 950 DEG C ± 5 DEG C, then pass through continuous metal cast process and wire drawer
Skill makes wire；
Step 2, vacuum coating
Sent into wire in evaporator crucible by the wire feeder in vacuum coating equipment, wire in evaporator crucible from metal
Liquation becomes metal vapors, and metal vapors carries out vacuum evaporation operation to insulating basement membrane in coating chamber and makes raw material film, raw material
Film i.e. makes metallized film after cutting.
As the improvement of technique scheme, the quality of aluminium ingot in described step one:The quality of tin slab:The quality of sodium ingot:
The quality of potassium ingot:The quality of metallic silicon power=(80 ~ 82):(31~33):(7.3~7.6):(3.5~3.7):(0.22~0.28).
As the improvement of technique scheme, in described step 2, the outside of evaporator crucible is additionally provided with mounting groove, installs
Groove is provided with supersonic generator and insulating oil；When carrying out vacuum evaporation operation, the frequency of supersonic generator is 30.8 ~
31.6KHz.
As the improvement of technique scheme, in described wire, the percentage by weight of Na is a, 5.98%≤a≤6%；Institute
The percentage by weight stating K in wire is b, 2.87%≤b≤2.92%；2 ＜ a/b ＜ 2.1.
As the improvement of technique scheme, in described wire, the percentage by weight of Si is c, 0.18%≤c≤0.22%,
40 ＜ (a+b)/c ＜ 50.
As the improvement of technique scheme, in described step one, the purity of metallic silicon power is more than 99.9%, metallic silicon power
Particle diameter be less than 50 μm.
Beneficial effects of the present invention：The self-healing energy of this metallized film is low, and caloric value is little, and the self-healing time is very short, self-healing
Sensitivity very high, to fault isolation excellent, near fault dielectric damage little, even if the metal of this metallized film
Layer not design safety fuse, when dielectric causes it breakdown due to fault, this metallized film also can be good from
More, it is to avoid occur multilayer insulation medium Continuous Breakdown to cause the phenomenon of extensive burn, the high life of this metallized film,
Security is good.When this metallized film uses under the hot environment of 85 ~ 100 DEG C, owing to this metallized film can be quick
Self-healing and caloric value are low, and hot environment is little on the impact of this metallized film.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with embodiment, to the present invention
It is further elaborated.It should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not used to
Limit the present invention.
Embodiment 1
It is 99.9% and particle diameter by the aluminium ingot of 80Kg, the tin slab of 31Kg, the sodium ingot of 7.3Kg, the potassium ingot of 3.5Kg and 0.22Kg purity
Metallic silicon power less than 50 μm carries out being smelted in inserting smelting furnace makes alloy molten solution, needs to be passed through nitrogen and protect in fusion process
Protect gas, when the temperature of alloy molten solution reaches 950 DEG C ± 5 DEG C, then make wire by continuous metal cast process and drawing process；This metal
The percentage by weight of Na in Si（Single component accounts for the mass percent of total component）For a, a=5.98%, the weight hundred of K in wire
Proportion by subtraction is b, b=2.87%, a/b=2.09；In wire, the percentage by weight of Si is c, c=0.18%, (a+b)/c=49；This metal
The fusing point of silk is 415 ~ 435 DEG C.
Being sent into above-mentioned wire in evaporator crucible by the wire feeder in vacuum coating equipment, wire is at evaporator crucible
In become metal vapors from molten metal；Wherein, the outside of evaporator crucible is additionally provided with mounting groove, is provided with ultrasonic in mounting groove
Wave producer and insulating oil；When carrying out vacuum evaporation operation, the frequency of supersonic generator is 30.8KHz, at insulating oil
Under effect, the molten metal in evaporator crucible is in vibrational state；Metal vapors carries out vacuum to insulating basement membrane in coating chamber
Raw material film is made in evaporation operation, and raw material film i.e. makes metallized film after cutting.
Embodiment 2
By the aluminium ingot of 81.3Kg, the tin slab of 32.3Kg, the sodium ingot of 7.5Kg, the potassium ingot of 3.6Kg and 0.25Kg purity be 99.9% and
The metallic silicon power less than 50 μm for the particle diameter carries out being smelted in inserting smelting furnace makes alloy molten solution, needs to be passed through nitrogen in fusion process
Gas shielded gas, when the temperature of alloy molten solution reaches 950 DEG C ± 5 DEG C, then makes wire by continuous metal cast process and drawing process；Should
In wire, the percentage by weight of Na is a, a=6%, and in wire, the percentage by weight of K is b, b=2.88%, a/b=2.08；Metal
In Si, the percentage by weight of Si is c, c=0.2%, (a+b)/c=44.4；This fusing point wiry is 413 ~ 431 DEG C.
Being sent into above-mentioned wire in evaporator crucible by the wire feeder in vacuum coating equipment, wire is at evaporator crucible
In become metal vapors from molten metal；Wherein, the outside of evaporator crucible is additionally provided with mounting groove, is provided with ultrasonic in mounting groove
Wave producer and insulating oil；When carrying out vacuum evaporation operation, the frequency of supersonic generator is 31KHz, at the work of insulating oil
Under with, the molten metal in evaporator crucible is in vibrational state；Metal vapors carries out vacuum steaming to insulating basement membrane in coating chamber
Raw material film is made in plating operation, and raw material film i.e. makes metallized film after cutting.
Embodiment 3
It is 99.9% and particle diameter by the aluminium ingot of 82Kg, the tin slab of 33Kg, the sodium ingot of 7.6Kg, the potassium ingot of 3.7Kg and 0.28Kg purity
Metallic silicon power less than 50 μm carries out being smelted in inserting smelting furnace makes alloy molten solution, needs to be passed through nitrogen and protect in fusion process
Protect gas, when the temperature of alloy molten solution reaches 950 DEG C ± 5 DEG C, then make wire by continuous metal cast process and drawing process；This metal
In Si, the percentage by weight of Na is a, a=6%, and in wire, the percentage by weight of K is b, b=2.92%, a/b=2.05；In wire
The percentage by weight of Si is c, c=0.22%, (a+b)/c=40.4；This fusing point wiry is 410 ~ 430 DEG C.
Being sent into above-mentioned wire in evaporator crucible by the wire feeder in vacuum coating equipment, wire is at evaporator crucible
In become metal vapors from molten metal；Wherein, the outside of evaporator crucible is additionally provided with mounting groove, is provided with ultrasonic in mounting groove
Wave producer and insulating oil；When carrying out vacuum evaporation operation, the frequency of supersonic generator is 31.6KHz, at insulating oil
Under effect, the molten metal in evaporator crucible is in vibrational state；Metal vapors carries out vacuum to insulating basement membrane in coating chamber
Raw material film is made in evaporation operation, and raw material film i.e. makes metallized film after cutting.
In the above-described embodiments, in manufacturing process wiry, continuous metal cast process is i.e. that alloy molten solution constantly passes through water-cooled
Crystallizer, pulls straight from crystallizer lower exit port after the duricrust that congeals into, and through water-spraying control, is cut into the casting of blank after all solidifying
Technical process.Blank makes wire by drawing process again.The wire made by continuous metal cast process and drawing process, joint
It is few, it is to avoid because welded wire causes Na, K and Sn changes of contents in wire.
It is that the ultrasonic wave of 30.8 ~ 31.6KHz makes to evaporate earthenware under the transmission of insulating oil that supersonic generator produces frequency
Molten metal in crucible is in vibrational state, and the molten metal in evaporator crucible not only can produce bubble, and bubble will be with ultrasonic
Vibrating and being grown into and increase, then vanish suddenly again and division, the bubble after division grows again and shattered to pieces continuously；These gas
Bubble creates HTHP when collapsing rapidly in bubble, and because the liquid at high speed around bubble pours bubble near bubble
Liquid in create strong local shock, thus create ultrasonic pulverizing, " mix and blend " effect, and at ultrasonic wave
Frequency sweep effect under, molten metal formed backflow so that each group of the molten metal of unevaporated molten metal and critical condition
Divide and mix, it is to avoid molten boiling point relatively low Na, K and Sn evaporate in advance, and the bottom deposit simultaneously avoiding evaporator crucible is substantial amounts of
Al, it is ensured that each component content in the metal level being formed after evaporation is equal with each component content wiry.Insulating oil uses and closes
Insulating oil, the medium that insulating oil transmits as ultrasonic wave, and insulating oil is become not to affect the use of evaporator crucible, it is to avoid evaporation earthenware
Crucible is short-circuited.The power output of supersonic generator is calculated according to the area of evaporator crucible, the output work of supersonic generator
Rate is maintained at 0.3 ~ 0.5W every square centimeter.The power output of supersonic generator selects less than normal, then affect gold in evaporator crucible
Belonging to the extent of vibration of liquation, causing the plated film time partially long, affect formation efficiency, the power output of supersonic generator selects partially
Greatly, the molten metal vibration in evaporator crucible acutely, is accelerated the loss of Na, K and Sn, is affected coating quality.In evaporator crucible
After molten metal evaporation, on dielectric, deposition forms metal level and is raw material film, and the composition of metal level is identical with wire.
Owing to the addition of Na, K and Sn of eutectic boiling point in described wire, the content of especially Sn is of a relatively high so that
Fusing point wiry significantly reduces for fine aluminium silk；This wire is mixture, therefore does not has the melting point values determining, but has
One melting range is 410 ~ 435 DEG C, and for the fusing point of fine aluminium is 660 DEG C, this wire fusing point is low, it follows that
Energy required when wire fusing, gasification significantly reduces for fine aluminium silk.Na and K is oxidizable, is passed through nitrogen protection
Gas avoids Na and K to aoxidize.The total content of Na and K can not be too low, otherwise influences whether follow-up low-yield self-healing；Na's and K is total
Content makes mechanical degradation wiry, wire deliquescing compared with Gao Zehui；Na and K not only can enter according to the ratio of 2 ~ 2.1
One step promotes fusing point wiry to reduce, and it can also form Na-K alloy, affects wire shaping.By adding trace
Si, it is possible to resolve owing to having added the defect that Na and K causes its mechanical performance to reduce so that wire has superior anti-wear performance；
But, Si is difficult to evaporation and Si is semiconductor, and its content too high can not affect subsequent metallisation film self-healing；Therefore must basis
The total content of Na and K determines the addition of Si.
This wire is utilized to be deposited with the metal level made, when there is fault in metal level, the mistake of this metal level electric discharge self-healing
Cheng Shi：Electric current by metal level when, owing to fault presents semiconductive or insulating properties, from fault more close to region, its electric current is close
Spending bigger, at metallic electrode in the close region of fault, current density sharply rises to its Jiao Er heat energy by this district's metal
Changing the fusing of layer, causing at arcing herein between electrode, electric arc quickly evaporates and throwing dissipates motlten metal at this, is formed without metal level
Be dielectrically separated from district, arc extinction, it is achieved self-healing.Wherein, in motlten metal evaporation process, due to Na and K molten boiling point very
Low, it next to that Sn, is finally Al, the Van der Waals force in motlten metal is that echelon is destroyed, and not only Na, K and Sn first evaporate so that
This formation high resistance area, region, promotes Al evaporation further, and the required energy of evaporation reduces further, and, high resistance area is cincture
What fault was formed, therefore high resistance area area is less；During Gai, the evaporation time short i.e. self-healing time be very short, the sensitivity of self-healing
Very high, excellent to fault isolation, little to the dielectric damage near fault, and owing to metal level is to be deposited with shape by wire
Becoming, for pure aluminum metal layer, this metal level self-healing energy is less, it can be avoided that occur multilayer insulation medium to hit continuously
Wear the phenomenon causing extensive burn.
Owing to the composition of metal level with the addition of the Si of trace so that metal level has superior anti-wear performance, cutting
It is difficult to be scratched with during follow-up assembling, it is ensured that the self-healing that this metallized film can be good.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any modification, equivalent and the improvement etc. made within god and principle, should be included within the scope of the present invention.
Claims (6)
1. a metallized film preparation method, it is characterised in that comprise the following steps：
Step one, making wiry
Carry out being smelted in aluminium ingot, tin slab, sodium ingot, potassium ingot and metallic silicon power are inserted smelting furnace and make alloy molten solution, melting
Journey needs be passed through nitrogen protection gas, when the temperature of alloy molten solution reaches 950 DEG C ± 5 DEG C, then pass through continuous metal cast process and wire drawer
Skill makes wire；
Step 2, vacuum coating
Sent into wire in evaporator crucible by the wire feeder in vacuum coating equipment, wire in evaporator crucible from metal
Liquation becomes metal vapors, and metal vapors carries out vacuum evaporation operation to insulating basement membrane in coating chamber and makes raw material film, raw material
Film i.e. makes metallized film after cutting.
2. a kind of metallized film preparation method according to claim 1, it is characterised in that：Aluminium ingot in described step one
Quality:The quality of tin slab:The quality of sodium ingot:The quality of potassium ingot:The quality of metallic silicon power=(80 ~ 82):(31~33):(7.3~
7.6):(3.5~3.7):(0.22~0.28).
3. a kind of metallized film preparation method according to claim 2, it is characterised in that：Described step 2 is evaporated earthenware
The outside of crucible is additionally provided with mounting groove, is provided with supersonic generator and insulating oil in mounting groove；Carrying out vacuum evaporation operation
When, the frequency of supersonic generator is 30.8 ~ 31.6KHz.
4. a kind of metallized film preparation method according to claim 2, it is characterised in that：The weight of Na in described wire
Amount percentage is a, 5.98%≤a≤6%；In described wire, the percentage by weight of K is b, 2.87%≤b≤2.92%；2 ＜ a/b
＜ 2.1.
5. a kind of metallized film preparation method according to claim 4, it is characterised in that：The weight of Si in described wire
Amount percentage is c, 0.18%≤c≤0.22%, 40 ＜ (a+b)/c ＜ 50.
6. a kind of metallized film preparation method according to claim 1, it is characterised in that：Metallic silicon in described step one
The purity of powder is more than 99.9%, and the particle diameter of metallic silicon power is less than 50 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610732825.1A CN106435230B (en) | 2016-08-27 | 2016-08-27 | A kind of metallized film preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610732825.1A CN106435230B (en) | 2016-08-27 | 2016-08-27 | A kind of metallized film preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106435230A true CN106435230A (en) | 2017-02-22 |
| CN106435230B CN106435230B (en) | 2017-09-29 |
Family
ID=58181932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610732825.1A Expired - Fee Related CN106435230B (en) | 2016-08-27 | 2016-08-27 | A kind of metallized film preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106435230B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107406970A (en) * | 2015-03-23 | 2017-11-28 | 纽升股份有限公司 | Equipment for evaporating material |
| CN110241336A (en) * | 2019-07-23 | 2019-09-17 | 宁波合力模具科技股份有限公司 | A kind of magnesium alloy and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1617267A (en) * | 2004-12-01 | 2005-05-18 | 戴国水 | Tin-zinc-aluminium alloy wire |
| CN101604577A (en) * | 2009-04-30 | 2009-12-16 | 杨文荣 | A kind of dry-type composite-dielectric filter capacitor |
| JP2011195903A (en) * | 2010-03-19 | 2011-10-06 | Sumitomo Chemical Co Ltd | Aluminum material and method for producing the same |
| CN103680945A (en) * | 2013-11-19 | 2014-03-26 | 张家港市星河电子材料制造有限公司 | Aluminum zinc metallized film |
| JP2015076223A (en) * | 2013-10-08 | 2015-04-20 | 株式会社Uacj | Aluminum alloy for negative electrode material of aluminum air battery, and aluminum air battery |
-
2016
- 2016-08-27 CN CN201610732825.1A patent/CN106435230B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1617267A (en) * | 2004-12-01 | 2005-05-18 | 戴国水 | Tin-zinc-aluminium alloy wire |
| CN101604577A (en) * | 2009-04-30 | 2009-12-16 | 杨文荣 | A kind of dry-type composite-dielectric filter capacitor |
| JP2011195903A (en) * | 2010-03-19 | 2011-10-06 | Sumitomo Chemical Co Ltd | Aluminum material and method for producing the same |
| JP2015076223A (en) * | 2013-10-08 | 2015-04-20 | 株式会社Uacj | Aluminum alloy for negative electrode material of aluminum air battery, and aluminum air battery |
| CN103680945A (en) * | 2013-11-19 | 2014-03-26 | 张家港市星河电子材料制造有限公司 | Aluminum zinc metallized film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107406970A (en) * | 2015-03-23 | 2017-11-28 | 纽升股份有限公司 | Equipment for evaporating material |
| CN110241336A (en) * | 2019-07-23 | 2019-09-17 | 宁波合力模具科技股份有限公司 | A kind of magnesium alloy and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106435230B (en) | 2017-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105695982A (en) | Additive manufacturing method for electrical contact made of copper-tungsten functionally gradient material | |
| CN106435230B (en) | A kind of metallized film preparation method | |
| JP2021506072A (en) | Electromagnetic fluid generator | |
| US11600454B2 (en) | Contact assembly for electrical devices and method for making | |
| CN108941828A (en) | A kind of heterogenous metal brazing device and method that semisolid is assisted without brazing flux | |
| CN107053786A (en) | With the liquid metal thermal interface material from molten characteristic | |
| US6437275B1 (en) | Vacuum circuit-breaker, vacuum bulb for use therein, and electrodes thereof | |
| CN105177346A (en) | Tungsten-copper electric contact material and preparation method thereof | |
| JP2013171812A (en) | METHOD FOR MANUFACTURING Si-BASED ALLOY NEGATIVE ELECTRODE | |
| CN102251209B (en) | Electrical explosion spraying method for powder | |
| CN100506461C (en) | Welding wire of melt welding filling flux for granular enhanced aluminum-based composite material | |
| CN201421816Y (en) | Fuse body for low voltage fuses | |
| RU2436864C1 (en) | Procedure for application of composite laminate molybdenum-copper coating on copper contact surface | |
| CN206620354U (en) | PPE substrates | |
| CN202164346U (en) | Powder electrical explosion spraying device | |
| CN101840780B (en) | Self-healing low-voltage reactive power compensation capacitor | |
| CN204094300U (en) | For the device of copper pipe in refrigeration plant and Al pipe butt welding | |
| CN102950292A (en) | Production method of submicron-order copper-manganesenickle alloy powder | |
| Cheng et al. | Reliability improvement of gas discharge tube by suppressing the formation of short-circuit pathways | |
| RU2436863C2 (en) | Procedure for application of pseudo-alloy molybdenum-copper coating on copper contact surface | |
| Jiang et al. | Vacuum Circuit Breaker for Aviation Variable Frequency Power System: Theory and Application of Arc in Electrical Apparatus | |
| CN106957980B (en) | With the liquid metal thermal interface material from gain performance | |
| JP4342700B2 (en) | COATING MEMBER FOR ELECTRIC DEVICE AND MANUFACTURING METHOD THEREOF | |
| RU2806954C1 (en) | Method for electroexplosive spraying of electrical erosion-resistant coating based on titanium and silver diboride onto copper electrical contact | |
| CN103436732A (en) | Efficient tin liquor antioxidant additive |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200807 Address after: Yang Ning Dun San TA Cun 242300 Anhui city in Xuancheng Province, Ningguo City, No. 001 group Patentee after: Song Renxiang Address before: 242300 Wang Xi industrial zone, Xuancheng, Anhui, Ningguo Patentee before: ANHUI NINGGUO HAIWEI ELECTRONICS Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200930 Address after: 242300 Wang Xi industrial zone, Xuancheng, Anhui, Ningguo Patentee after: ANHUI NINGGUO HAIWEI ELECTRONICS Co.,Ltd. Address before: Yang Ning Dun San TA Cun 242300 Anhui city in Xuancheng Province, Ningguo City, No. 001 group Patentee before: Song Renxiang |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170929 Termination date: 20200827 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |