CN106424466A - Manufacturing method and device for lead structure of rectifier diode - Google Patents
Manufacturing method and device for lead structure of rectifier diode Download PDFInfo
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- CN106424466A CN106424466A CN201510493060.6A CN201510493060A CN106424466A CN 106424466 A CN106424466 A CN 106424466A CN 201510493060 A CN201510493060 A CN 201510493060A CN 106424466 A CN106424466 A CN 106424466A
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- pin configuration
- forging
- head
- manufacture method
- die cavity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21F—WORKING OR PROCESSING OF METAL WIRE
- B21F11/00—Cutting wire
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D28/00—Shaping by press-cutting; Perforating
- B21D28/02—Punching blanks or articles with or without obtaining scrap; Notching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21F—WORKING OR PROCESSING OF METAL WIRE
- B21F5/00—Upsetting wire or pressing operations affecting the wire cross-section
- B21F5/005—Upsetting wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Abstract
The invention discloses a manufacturing method and device for a lead structure of a rectifier diode. The manufacturing method includes the following steps that firstly, a blank with the set length is provided; then the blank is forged, and a pre-forged piece is formed, wherein the pre-forged piece is provided with a lead part and a head part connected to one end of the lead part; and then the pre-forged piece is subject to cut forming so that a connecting part can be formed on the head part, wherein the connecting part is provided with a welding face, the welding face is a polygon with N linear edges, and N is a positive integer larger than 2. By the adoption of the lead structure manufactured through the method, the performance of the rectifier diode can be effectively improved.
Description
Technical field
The present invention is related to a kind of commutation diode, espespecially a kind of rectification two pole for automobile current generator
The manufacture method of the pin configuration of pipe.
Background technology
Commutation diode is one of important spare part of alternating current generator, and it can be assemblied in automobile current generator
On, and when car engine operates, alternating current produced by electromotor can be converted into by diode
Unidirectional current, is then stored in storage battery again with the electric power needed for electrical appliance every on supply car.Typically come
Say, the commutation diode in automobile current generator often can be in high temperature, in high vibration environment, therefore rectification
The design that diode must possess high pressure resistant, high temperature resistant, high reliability and can radiate rapidly etc..
Refer to Fig. 1, be a kind of schematic diagram of the pin configuration of known commutation diode.Lead is tied
Structure 3 ', due to can be limited by mould therefor in forming process, leads to the contact surface 31 ' molding
It is mostly circular；However, having the commutation wafer 2 ' of many special requirements at present on the market, with one or six
As a example angular chip, the shape of its contact surface 21 ' is also hexagon, the contact with pin configuration 3 '
The shape in face 31 ' is different.When pin configuration 3 ' is utilized together with solder bonds with commutation wafer 2 '
When, contact surface 31 ' generally cannot be completely covered contact surface 21 ', so that commutation diode cannot be sent out
Wave its maximum performance.In addition, being limited to the structure design of pin configuration 3 ', it is with insulation-encapsulated glue
Adhesion between body is very poor, thus easily causes pin configuration 3 ' and send out with respect to insulation-encapsulated colloid
Raw rotation, or even slip out in insulation-encapsulated colloid.
In addition, pin configuration 3 ' must be bonded together and shape by solder and commutation wafer 2 '
Become conducting, the only joint interface between pin configuration 3 ' and commutation wafer 2 ', fusion welding meeting
Because cohesiveness/the surface tension of itself, if so that condition does not control and proper easily causes uniformity not
Good, so, on the one hand do not simply fail to cover neighboring area or the corner regions of commutation wafer 2 ',
Two structural strengths that may influence whether commutation diode and performance.
As described above, the method for the conventional pin configuration making in commutation diode of current industry,
The performance requirement of pin configuration cannot be met.
Content of the invention
The present invention is from the angle of the overall power increasing commutation diode, one of main purpose
A kind of manufacture method of the pin configuration of commutation diode and device, its made pin configuration are provided
There is the solder side of the commutation wafer of the corresponding polygonal profile of shape, and the R of the outboard peripheries of solder side
Angle (i.e. the radius of the arc chord angle between two linear edges) is all less than 0.2mm.
For achieving the above object, the present invention employs the following technical solutions：A kind of lead of commutation diode
The manufacture method of structure, it comprises the following steps：First, a stock of preseting length is provided；Then,
Described stock is forged, to form a pre- forging, wherein said pre- forging have a leading part and
One head being connected to described leading part one end；Then, described pre- forging is cut into type, so that institute
State head and be shaped to a junction surface, wherein said junction surface has a solder side, and described solder side is
There is a polygon of N number of linear edge, wherein N is the positive integer more than 2.
In an embodiment, described solder side also comprises N number of arc edge, described linear edge and
Described arc edge is arranged alternately and is connected, and each described arc edge has one and is less than or equal to
0.2 millimeter of predetermined radii.
In an embodiment, the described step that forges comprises a bottom surface molding of the head of described pre- forging
For circle, or this bottom surface is shaped to N side shape.
In an embodiment, in described cut forming step after also comprise the described pin configuration of a grinding
Step.
In an embodiment, described forge step and be also contained in described head and reserve one treat cutting material, institute
State treat cutting material internal diameter be more than described head maximum inner diameter, and described treat cutting material have one make a reservation for
Thickness, make described in cut the further molding in bottom that forming step makes a ring side surface at described junction surface
Go out to have a locating flange of a predetermined altitude, wherein said predetermined thickness and described predetermined altitude essence
Upper equal.
In an embodiment, described predetermined thickness is 0.2 to 1.5 millimeter, and described predetermined altitude is
0.2 to 1.5 millimeter.
The present invention also provides a kind of lead of the commutation diode for implementing above-mentioned manufacture method to tie
The manufacture device of structure, it includes a shearing mechanism, a swaging mechanism and a cutting mechanism.Wherein, institute
State shearing mechanism for providing a stock of preseting length；Described swaging mechanism is used for entering described stock
Row forge to form a pre- forging, wherein said pre- forging have a leading part and be connected to described in draw
The head of line portion one end；Described cutting mechanism is used for for described pre- forging cutting into type, so that described head
Portion is shaped to a junction surface, and wherein said junction surface has a solder side, and described solder side is to have
One polygon of N number of linear edge, wherein N is the positive integer more than 2.
In an embodiment, described swaging mechanism includes a diel, and described diel has one
The first die cavity that holding part and is connected with holding part, and the structure of described leading part and described holding part
Configuration space be consistent, and the structure of described head is consistent with the configuration space of described first die cavity.
In an embodiment, described first die cavity is a circular die cavity or a N side shape die cavity, so that
One bottom surface of the head of described pre- forging is shaped to circle or N side shape.
In an embodiment, described cutting mechanism comprises a punching mechanism, and described punching mechanism includes one
Mould, described mould has one second die cavity, and the cross sectional shape of described second die cavity is
R angle is less than or equal to 0.2 millimeter of N side shape, and described punching mechanism is used for excising the one of described head
Redundance, makes the N side shape that described solder side is in that R angle is less than or equal to 0.2 millimeter.
The present invention compared with prior art has clear advantage and has the beneficial effect that：First, this
Bright by " first forge stock and mold head, then again by head cut into tool special requirement size
The particular step flow process at the junction surface of (as corner, hexagonal or anise) ", drawing according to the present invention
The junction surface of line structure, when engaging with the commutation wafer of polygonal profile, can increase the two connect described
Tactile sectional area, makes the current value of conducting improve, and then is effectively increased overall power.
Furthermore, according to manufacture method proposed by the present invention, the wheel at the junction surface of pin configuration is greatly improved
Wide fineness, can make R angle (the i.e. arc chord angle between two linear edges of the outboard peripheries of solder side
Radius) all less than 0.2mm, therefore when junction surface is engaged with commutation wafer, fusion welding can
It is formed uniformly in the described joint interface of the two, and each corner regions of commutation wafer can be by
The complete cladding of solder and be protected, and then be not easy to collapse under external force broken or damaged.
Other objects of the present invention and advantage can from disclosed herein technical characteristic obtain into one
The understanding of step.In order to the above and other objects, features and advantages of the present invention can be become apparent,
Special embodiment below simultaneously coordinates appended accompanying drawing to be described in detail below.
Brief description
Fig. 1 is the pin configuration of known commutation diode and the commutation wafer with polygonal profile
Schematic diagram.
Fig. 2 is the schematic flow sheet of the manufacture method of the pin configuration of commutation diode of the present invention.
Fig. 3 is the step in the manufacture method of the pin configuration of commutation diode of the corresponding present invention
The process schematic representation of S100.
Fig. 4 is the step in the manufacture method of the pin configuration of commutation diode of the corresponding present invention
A kind of process schematic representation of the embodiment of S102.
Fig. 4 A is the step in the manufacture method of the pin configuration of commutation diode of the corresponding present invention
The process schematic representation of the another embodiment of S102.
Fig. 5 is a kind of schematic diagram of aspect of the pre- forging of institute's molding in described step S102.
Fig. 5 A is the schematic diagram of another kind of aspect of the pre- forging of institute's molding in described step S102.
Fig. 6 is the step in the manufacture method of the pin configuration of commutation diode of the corresponding present invention
A kind of process schematic representation of the embodiment of S104.
Fig. 6 A is the step in the manufacture method of the pin configuration of commutation diode of the corresponding present invention
The process schematic representation of the another embodiment of S104.
Fig. 6 B is the step in the manufacture method of the pin configuration of commutation diode of the corresponding present invention
The process schematic representation of another embodiment of S104.
Fig. 6 C is the step in the manufacture method of the pin configuration of commutation diode of the corresponding present invention
The process schematic representation of the another embodiment of S104.
Fig. 7 is a kind of three-dimensional view of aspect of the pin configuration of the commutation diode according to the present invention.
Fig. 8 is a kind of sectional view of aspect of the pin configuration of the commutation diode according to the present invention.
Fig. 9 is the sectional view of another kind of aspect of the pin configuration of the commutation diode according to the present invention.
Figure 10 is the stereopsis of another kind of aspect of the pin configuration of the commutation diode according to the present invention
Figure.
Figure 11 is the schematic diagram of the commutation diode applying the pin configuration according to the present invention.
Wherein, description of reference numerals is as follows：
2 ' commutation wafers
21 ' contact surfaces
3 ' pin configurations
31 ' contact surfaces
1 raw material 100 shearing mechanism
12 stock 102 shearing die
2 pre- forging 104 baffle plates
22 first leading part 106 shears
24 heads 200,200 ' swaging mechanisms
25 treat cutting material 202,202 ' diels
26 bottom surface 2021 holding part
28 redundances 2022,2022 ' first die cavitys
3 pin configuration 204 drift
31 second leading part 300 cutting mechanism
32 junction surface 302 mould
33 solder side 3,021 second die cavity
33a linear edge
33b arc edge
34 ring side surfaces
35 locating flanges
36 connecting portions
4 first conductive welding pad
5 second conductive welding pad
6 insulation-encapsulated bodies
Z commutation diode
B pedestal
C commutation wafer
θ angle
S accommodation space
D1, D2 internal diameter
T thickness
H1, H2 height
Step S100 is to step S106
Specific embodiment
Based on commutation diode be intelligent mobile phone, ultrabook Ultrabook, LCD TV, flat board
One of indispensable spare part of the products such as computer, light emitting diode LED lighting and auto electronic, its
The functions such as rectification and burning voltage can be played the part of in electronic circuit, the present invention provides a kind of making rectification two
The new technique of the pin configuration in pole pipe；It is noted that can make using this new technique providing spy
Different specification and the pin configuration with chip solder side of fine size (as corner, hexagonal or anise),
And compared with known pin configuration, the outboard peripheries of the solder side of the pin configuration according to the present invention can
It is formed with the R angle (or claiming fillet) that radius is less than 0.2mm.
Hold above-mentioned, the part that the pin configuration of the present invention is engaged with chip (hereinafter referred to as " engages
Portion ") can cover all polygonal profile commutation wafer neighboring area, wherein solder side with whole
The contacting section of stream both chips amasss and also can therefore increase, and thereby, the performance of commutation diode is expected
It is substantially improved.Importantly, in engaging process fusion welding can be formed uniformly in junction surface with
The joint interface of both commutation wafers is so that each corner regions of commutation wafer can be by solder bag
Cover and fully protected, and then be not easy to collapse under external force broken or damaged.
A preferred embodiment cited below particularly, and coordinate appended accompanying drawing that the embodiment party of the present invention to be described
Formula, those skilled in the art can understand advantages of the present invention and work(by content disclosed in the present specification
Effect.In addition, the present invention can be implemented or be applied by other different specific embodiments, that is,
Say that the every details in this specification also can be based on different viewpoints and application, enter under the spirit of the present invention
Row is various to be modified and change.Additionally, appended accompanying drawing is only used as simple illustrative purposes, not according to actual chi
Very little description, first give chat bright.
Refer to Fig. 2, be the manufacture of the pin configuration of the commutation diode of a preferred embodiment of the present invention
The schematic flow sheet of method.As illustrated, the pin configuration of commutation diode that the present embodiment is provided
Manufacture method include：Step S100, provides a stock of preseting length；Step S102, by embryo
Material is forged, to form a pre- forging；Step S104, pre- forging is cut into type, to obtain
One pin configuration；And step S106, pin configuration is carried out surface burr removing.
Refer to Fig. 3, step S100, when actual embodiment, can be utilized a shearing mechanism 100 by one
Raw material 1 is cut into the stock 12 that multistage is respectively provided with a predetermined length.Specifically, raw material 1
Main body can for metal material (such as：Copper material) column structure；Shearing mechanism 100 used by the present embodiment
May include a shearing die 102, to set with respect to the baffle plate 104 and of shearing die 102 movement
It is placed in the shears 106 between shearing die 102 and baffle plate 104, wherein shearing die 102 is available for one
Partial raw material 1 is disposed therein, and the raw material 1 of another part then stretches out towards the direction of baffle plate 104
Outside shearing die 102；When carrying out cutting off operation, due to baffle plate 104 and shearing die 102 it
Between vertical dimension may decide that the length of the raw material 1 stretching out shearing die 102, therefore can be according to this
Raw material 1 is simultaneously cut into the stock of multistage preseting length and circular cross-section by mode using shears 106
12.It should be noted that although the present embodiment is the embryo preparing preseting length using shearing mechanism 100
Material, but the modus operandi of actually step S100 is not restricted to this.
See also Fig. 4 and Fig. 5, step S102, when actual embodiment, can be utilized a upsetting machine
Structure 200 forges stock 12, so that one end of stock 12 molds one first leading part 22 and another
End molds a head 24.Specifically, swaging mechanism 200 used by the present embodiment may include relatively
One diel 202 of setting and a drift 204, wherein diel 202 has a holding part
2021 and one the first die cavitys 2022 connecting with holding part 2021, and holding part 2021 is available for one
The stock 12 dividing is arranged, and allows the stock 12 of another part exposed by the first die cavity 2022 simultaneously
Outside diel 202；Drift 204, can be from away from diel when carrying out forging operation
202 move toward near the direction of diel 202, just stop until being pressed in diel 202,
During the stock 12 that exposes can be squeezed in the first die cavity 2022, be filled in whole first simultaneously
Die cavity 2022.It should be noted that although the present embodiment is using diel 202 and drift 204
Match to mold pre- forging 2, but the modus operandi of actually step S102 is not restricted to
This.Subsidiary one carries, and swaging mechanism 200 is mountable on a nailing machine.
See also Fig. 5, Fig. 6 and Fig. 6 A, be further described the pre- of institute's molding in step S102
The architectural feature of forging 2, pre- forging 2 has the first leading part 22 and and is connected to the first leading part
The head 24 of 22 one end, the structure of the wherein first leading part 22 and the holding part of diel 202
2021 configuration space is consistent, and the first die cavity 2022 of the structure of head 24 and diel 202
Configuration space be consistent；For example, when the first die cavity 2022 is a circular die cavity, upsetting machine
The section of the head 24 that structure 200 is molded is then circular (as shown in Figure 6), or works as first
Die cavity 2022 is a N side shape die cavity (N is the integer more than 2), the head 24 being molded
Section then be N side shape (as shown in Figure 6A).
See also Fig. 6, Fig. 6 A～6C and Fig. 7, step S104, can profit when actual embodiment
With a cutting mechanism 300, pre- forging 2 is cut, its head 24 is cut into correspondence
The junction surface 32 of one reservation shape of commutation wafer；In the present embodiment, commutation wafer for example, more than
Side shape is (such as：Tetragon, hexagon or octagon) chip.Specifically, cutting mechanism
300 can be for example a punching mechanism, and it mainly includes a molding tool 302, and it has one second mould
Cave 3021, and the section of the second die cavity 3021 is in that (preferably R angle is less than or equal to 0.2mm to polygon
Polygon), in this embodiment, by a drift (not shown), and drive drift from
Move toward near the direction of mould 302 away from mould 302.Punching mechanism 300 is to blocking
The punching direction of part 2 can be punched from the first leading part 22 toward the direction of head 24 as shown in Figure 6 C,
But in enforcement also can be with opposite direction shown in Fig. 6 C, be punched from bottom surface 26 lower section toward head 24,
Redundance 28 with topping 24.Complete above-mentioned step S100 to step S104 after,
The pin configuration 3 that the configuration of the commutation wafer of one and polygonal profile matches can be molded.
It is further described the architectural feature of the pin configuration 3 of institute's molding in step S104, as Fig. 7 institute
Show, pin configuration 3 has one and can be connected to second as the second leading part 31 and of first electrode
Leading part 31 one end and can be used as the junction surface 32 of second electrode.Here needs first to illustrate, the
The structure of one leading part 22 can be identical or different with the second leading part 31；Furthermore, institute
The leading part 31 stating pin configuration 3 can just be molded in previous step (step S102)
Come, or again the semi-finished product being formed in previous step are carried out secondary operations and form out.
In the present embodiment, the second leading part 31 is column, and external diameter is between 1.1 to 1.7mm；
Accordingly, pin configuration 3 can with preferably very property and be less likely to occur to bend, and contribute to being lifted whole
The radiating efficiency of stream diode.
See also Fig. 7 and Fig. 8, junction surface 32 can be a polygonal corner post or cone cylinder,
And junction surface 32 have one for engage commutation wafer solder side 33 and by solder side 33 upwards
The ring side surface 34 extending.It should be noted that for reaching the effect increasing area of dissipation, permissible
Ring side surface 34 at junction surface 32 does pattern draft that is to say, that ring side surface 34 is tapered
It is arranged obliquely, between its medium ring side surface 34 and solder side 33, accompany a predetermined angle theta, preferably
It is between 60 degree to 90 degree.
It is further noted that, the pin configuration 3 of institute's molding, its junction surface in step S104
32 outboard peripheries plastic go out the minimum R angle of radius；Taking hexagonal corner post or cone cylinder as a example,
The solder side 33 at junction surface 32 is the six linear edge 33a and six circular arcs being arranged alternately and being connected
Around forming, each of which arc edge 33b is then only connected to adjacent two straight line to edge 33b
Between edge 33a, and the radius of each arc edge 33b is no more than 0.2mm.Accordingly, weld
Junction 33 can be closely bonded with each other with each corner regions of commutation wafer, and then can increase joint
Portion 32 is amassed with the contacting section of commutation wafer；In addition, in engaging process, fusion welding can be equal
It is formed at the joint interface at junction surface 32 and both commutation wafer (not shown) evenly, and will
Each corner region of commutation wafer is coated.
See also Fig. 4 A to Fig. 6 C, be other enforcement aspects of the present embodiment, it is first noted that
, in step S102, described pre- forging 2 can have different designs according to different mould structures
Pattern, as shown in Figure 4 A, when using another swaging mechanism different from aforesaid swaging mechanism 200
200 ' when forging stock 12, due to the first die cavity 2022 ' of diel 202 ' have different
Steric configuration, therefore drift 204 with diel 202 ' matched moulds after, in this way is made
Pre- forging 2 can reserve in the Basolateral periphery of head 24 and one treat cutting material 25；Further
Ground is said, as shown in Fig. 5 A and Fig. 6 B, treats that cutting material 25 has a predetermined thickness T, and waits to cut
The internal diameter D1 of material 25 is more than the maximum inner diameter D2 of head 24.
Please also refer to Fig. 6 C and Fig. 9, then it should be noted that in step S104, with aforementioned
Punching mechanism 300 to pre- forging 2 treat cutting material 25 cut (punching direction can be as Fig. 6 C institute
Show, or be and the rightabout shown in Fig. 6 C), thereby at ring side surface 34 bottom at junction surface 32
End mold a locating flange 35, therefore, the predetermined altitude H2 of locating flange 35 with treat cutting material
25 predetermined thickness T is substantially equal；In structure design, the height H1 at junction surface 32 can be situated between
Between about 0.2 to 2.5mm, in contrast, the height H2 of locating flange 35 can be between 0.2
To 1.5mm, it is preferably between about 0.3 to 0.7mm, wherein more left with 0.5mm
Right height is optimal.And pass through the configuration of locating flange 35, pin configuration 3 and cladding can be increased
Adhesion between the insulating barrier of pin configuration 3.
See also Fig. 8, Fig. 9 and Figure 10, other for the present embodiment implement aspect, in profit
During molding the first leading part 22 and head 24 with diel 202, the type of may be designed to goes out
One be connected to described in connecting portion 36 therebetween；And pass through the configuration of connecting portion 36, can effectively keep away
The junction exempting from the first leading part 22 and head 24 or the second leading part 31 with junction surface 32 is because holding
Be there is the facts rupturing by excessive stress.
It should be noted that although the present embodiment is to cut using punching mechanism 300 to provide special requirement chi
The pin configuration 3 at very little junction surface 32, but the modus operandi of actually step S104 is not intended to limit
In this.For example, in other specific embodiments, the step cutting head 24 can be utilized a cutting
Cutter, and by Reciprocated cutting processing mode, the redundance 28 of head 24 is excised, or, also
A milling cutter can be utilized, and by helical milling processing mode, the redundance 28 of head 24 is gone
Remove；So, the molding mode that cuts shown in Fig. 6 A to Fig. 6 C only supplies to illustrate, and does not limit
The present invention.In addition, though in the pin configuration 3 shown in Fig. 7, the solder side 33 at junction surface 32
It is shaped as hexagon, but other for the present embodiment implement aspect, the solder side at junction surface 32
It is tetragon, eight sides that 33 shape also can design type by the steric configuration of the second die cavity 3021
Shape or other there is the polygon of different numbers edge；So, the solder side at the junction surface 32 shown in Fig. 7
, only for illustrating, actually solder side 33 can be for having the polygon of N number of linear edge for 33 shape
Shape, wherein N are the positive integer more than 2.
When actual embodiment, available milling tool is carried out at surface step S106 to pin configuration 3
Reason, to reach the effect of burr removing.Specifically, the present embodiment mainly using cylinder will be cut after
The section being formed carries out burr removing and corners, thereby improves the quality of pin configuration 3.Must illustrate
It is although milling tool used by the present embodiment is cylinder, but the execution side of actually step S106
Formula is not restricted to this.
Referring again to Fig. 3, Fig. 4 and Fig. 6, a kind of lead for implementing above-mentioned commutation diode
The shaped device of the manufacture method of structure may include a shearing mechanism 100, a swaging mechanism 200 and
Cutting mechanism 300.Wherein, shearing mechanism 100 is used for providing a stock 12 of preseting length；Swaging
Mechanism 200 is used for being forged to form a pre- forging 2 by stock 12, and it has a leading part (the
One leading part 22) and a head 24 being connected to leading part one end；Cutting mechanism 300 is used for will be pre-
Forging 2 cuts molding, so that the head 24 of pre- forging 2 is shaped to a junction surface 32, wherein engages
Portion 32 has a solder side 33, and solder side 33 is a polygon with N number of linear edge,
Wherein N is the positive integer more than 2.
In order that the solder side 33 at the junction surface 32 of pin configuration 3 is (special with the shape of commutation wafer
It is regular hexagon or square chip) reach best match state, the molding of described cutting mechanism 300
The second die cavity 3021 that mould 302 has can sophisticated design shape and size, such as by described
The cross sectional shape of two die cavitys 3021 is designed as the N side shape that R angle is less than or equal to 0.2 millimeter, thereby
Cutting mechanism 300 is after the redundance 28 excising described head 24, you can make described solder side
33 is in the N side shape that R angle is less than or equal to 0.2 millimeter.
As described above, explained the pin configuration of commutation diode of the present invention manufacture method and
The feature of device, advantage and the effect that can reach, next will be further described application institute of the present invention
The commutation diode of the pin configuration 3 made.Refer to Figure 11, be the lead knot according to the present invention
The schematic diagram of the commutation diode of structure.As illustrated, commutation diode Z includes a pedestal B, whole
Stream chip C, a pin configuration 3, one first conductive welding pad 4, one second conductive welding pad 5 and are exhausted
Edge packaging body 6.Specifically, pedestal B has that in a supporting part and one, (in figure is not marked around surface
Show), wherein supporting part can define an accommodation space S with interior jointly around surface, connects for setting
The commutation wafer C being combined and pin configuration 3.
In more detail, the first and second conductive welding pad 4,5 are respectively arranged at the phase of commutation wafer C
To two surfaces, and commutation wafer C is incorporated on the supporting part of pedestal B by the first conductive welding pad 4,
And the junction surface 32 of pin configuration 3 is connected with commutation wafer C by the second conductive welding pad 5, insulation
Packaging body 6 is formed at the accommodation space S of pedestal B, for completely envelope commutation wafer C, first
With the second conductive welding pad 4,5 and pin configuration 3.In the present embodiment, the first and second conductive welding pad
4th, 5 can for metal material (such as：Stannum), insulation-encapsulated body 6 can for epoxy resin (Epoxy) or
It is pi (PI), the right present invention is not limited.
It is worth illustrating again, the junction surface 32 due to the pin configuration 3 according to the present invention can
To meet the special requirement demand of commutation wafer C, so even employing many in commutation diode Z
Side shape is (such as：Tetragon, hexagon or octagon) commutation wafer C, described junction surface 32
Also the neighboring area of the commutation wafer C of polygonal profile can be covered all, to improve joint portion 32
The current value of the conducting and commutation wafer C between.
First, the present invention passes through " first to forge stock and mold head, then cut into head again
The specific step flow process at the junction surface of tool special requirement size (as corner, hexagonal or anise) ",
The junction surface of the pin configuration according to the present invention dock with the commutation wafer of polygonal profile combine when,
The described contacting section of the two can be increased amass, so that the current value of conducting is improved, and then be effectively increased entirety
Power.
Furthermore, the polygon junction surface of the pin configuration according to the present invention, the arc edge of its solder side
R angle all less than 0.2mm, therefore when junction surface is engaged with commutation wafer, fusion welding
Can be formed uniformly in the described joint interface of the two, and each corner regions of commutation wafer can
It is protected by the complete cladding of solder, and then be not easy to collapse under external force broken or damaged.
In addition, during the leading part molding pin configuration and junction surface, can additionally become
Type go out one be connected to described in connecting portion therebetween, and pass through the configuration of connecting portion, can be prevented effectively from
There is the facts of pin configuration fracture because bearing excessive stress；And, can be simultaneously at junction surface
Ring side surface bottom molds a locating flange, and passes through the configuration of locating flange, can increase lead knot
Adhesion between structure and the insulation-encapsulated body being coated on pin configuration.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit to the patent protection model of the present invention
Enclose, therefore the equivalence changes such as done with description of the invention and accompanying drawing content, all comprise in the same manner
In the scope of the present invention, close and give Chen Ming.
Claims (10)
1. a kind of manufacture method of the pin configuration of commutation diode is it is characterised in that this rectification two
The manufacture method of the pin configuration of pole pipe comprises the following steps：
One stock of preseting length is provided；
Described stock is forged, to form a pre- forging, wherein said pre- forging has a lead
Portion and one is connected to the head of described leading part one end；And
Described pre- forging is cut into type, so that described head is shaped to a junction surface, wherein said connects
Conjunction portion has a solder side, and described solder side is a polygon with N number of linear edge, its
Middle N is the positive integer more than 2.
2. the manufacture method of pin configuration as claimed in claim 1 is it is characterised in that described weldering
Junction also comprises N number of arc edge, and described linear edge and described arc edge are arranged alternately and phase
Connect, and each described arc edge has a predetermined radii being less than or equal to 0.2 millimeter.
3. the manufacture method of pin configuration as claimed in claim 1 is it is characterised in that described forging
Beat step to comprise for a bottom surface of the head of described pre- forging to be shaped to circle, or by this bottom surface molding
For N side shape.
4. the manufacture method of pin configuration as claimed in claim 1 is it is characterised in that in described
The step also comprising the described pin configuration of a grinding after cutting forming step.
5. the manufacture method of pin configuration as claimed in claim 1 is it is characterised in that described forging
Beat step and be also contained in described head and reserve one and treat cutting material, the described internal diameter treating cutting material is more than described
The maximum inner diameter of head, and described treat that cutting material has a predetermined thickness, make described in cut forming step
The bottom of a ring side surface at described junction surface is made to mold further and have the certain of a predetermined altitude
Position flange, wherein said predetermined thickness is substantially equal with described predetermined altitude.
6. the manufacture method of pin configuration as claimed in claim 5 is it is characterised in that described pre-
Determine thickness and be 0.2 to 1.5 millimeter, and described predetermined altitude is 0.2 to 1.5 millimeter.
7. a kind of manufacture device of the pin configuration of commutation diode is it is characterised in that this rectification two
The manufacture device of the pin configuration of pole pipe includes：
One shearing mechanism, provides a stock of preseting length；
One swaging mechanism, described stock is forged to form a pre- forging, wherein said pre- forging
There is the head that a leading part and is connected to described leading part one end；And
One cutting mechanism, described pre- forging is cut into type, so that described head is shaped to a junction surface,
Wherein said junction surface has a solder side, and described solder side is with N number of linear edge
Polygon, wherein N are the positive integer more than 2.
8. manufacture device as claimed in claim 7 is it is characterised in that described swaging mechanism includes
One diel, described diel has the first die cavity that a holding part and is connected with holding part,
And the structure of described leading part is consistent with the configuration space of described holding part, and the structure of described head with
The configuration space of described first die cavity is consistent.
9. manufacture device as claimed in claim 8 is it is characterised in that described first die cavity is one
Circular die cavity or a N side shape die cavity, so that a bottom surface of the head of described pre- forging is shaped to circle
Or N side shape.
10. manufacture device as claimed in claim 7 is it is characterised in that described cutting mechanism comprises
One punching mechanism, described punching mechanism includes a molding tool, and described mould has one second mould
Cave, and the cross sectional shape of described second die cavity is less than or equal to 0.2 millimeter of N side shape, institute for R angle
State punching mechanism for excising a redundance of described head, make described solder side be in R angle be less than or
N side shape equal to 0.2 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510493060.6A CN106424466B (en) | 2015-08-12 | 2015-08-12 | The manufacturing method and device of the pin configuration of rectifier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510493060.6A CN106424466B (en) | 2015-08-12 | 2015-08-12 | The manufacturing method and device of the pin configuration of rectifier diode |
Publications (2)
| Publication Number | Publication Date |
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| CN106424466A true CN106424466A (en) | 2017-02-22 |
| CN106424466B CN106424466B (en) | 2019-05-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510493060.6A Expired - Fee Related CN106424466B (en) | 2015-08-12 | 2015-08-12 | The manufacturing method and device of the pin configuration of rectifier diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019220671A (en) * | 2018-06-21 | 2019-12-26 | 朋程科技股▲ふん▼有限公司 | Power device for rectifier |
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| JPS59191361A (en) * | 1983-04-15 | 1984-10-30 | Toshiba Corp | Synthetic resin sealed-diode |
| JPH02112839A (en) * | 1988-10-20 | 1990-04-25 | Furukawa Electric Co Ltd:The | Header working use liner for lead wire and header working method for lead wire |
| JP2004079877A (en) * | 2002-08-21 | 2004-03-11 | Sumitomo Electric Ind Ltd | Method for manufacturing lead wire for electronic component |
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| CN203644793U (en) * | 2014-01-15 | 2014-06-11 | 乐山无线电股份有限公司 | Temperature shock-resisting diode |
| CN204029792U (en) * | 2014-06-16 | 2014-12-17 | 江苏云意电气股份有限公司 | A kind of automobile-used power rectifier diode lead structure |
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| JP2019220671A (en) * | 2018-06-21 | 2019-12-26 | 朋程科技股▲ふん▼有限公司 | Power device for rectifier |
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|---|---|
| CN106424466B (en) | 2019-05-24 |
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