CN106410064A - Method for manufacturing OLED mask plate - Google Patents
Method for manufacturing OLED mask plate Download PDFInfo
- Publication number
- CN106410064A CN106410064A CN201611074695.3A CN201611074695A CN106410064A CN 106410064 A CN106410064 A CN 106410064A CN 201611074695 A CN201611074695 A CN 201611074695A CN 106410064 A CN106410064 A CN 106410064A
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- metal
- layer
- mask plate
- manufacture method
- oled
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a method for manufacturing an OLED mask plate, a mask master plate is obtained through an existing mask plate manufacturing method to serve as a medium, and combined with an electroforming technology, a large number of OLED mask plates having good practical application effects can be manufactured, thus a new method is provided for the manufacture of the OLED mask plates, and production cost is reduced. In addition, in the manufacturing process of the OLED mask plates in the invention, neither an exposure machine nor photomask is needed, and production equipment and production technology can be simplified, thereby further reducing production cost, and achieving good practical application effects.
Description
Technical field
The present invention relates to flat display apparatus field, more particularly, to a kind of manufacture method of OLED mask plate.
Background technology
Organic electroluminescent technology (Organic Light Emitting Diode, OLED) be a kind of new display,
Lighting engineering.Vacuum evaporation technology is typically adopted to prepare OLED thin film, that is,：In the vacuum environment (～10-5Pa) heating organic/
Metal material, material is subject to heat sublimation, through the pattern having on the mask plate (mask) of certain pattern, forms tool in substrate surface
Effigurate organic metallic film.
OLED mask plate makes and mainly passes through the foil with certain pattern is welded on metal framework.Existing
Foil is mainly obtained by chemical method for etching.But the sheet metal price due to being obtained by etching method at present is high,
Limit it to use in a large number.
In order to obtain the OLED mask plate with lower price, at present, technical staff is try to manufacture using electrocasting
There is the sheet metal of pierced pattern.But current electroforming law technology is still not mature enough, and in the fabrication process, for realizing sheet metal
Patterning, needs to use exposure machine and light shield, and each mask plate corresponding needs corresponding light shield, thus manufacturing cost
Higher.
Content of the invention
The present invention is intended to provide a kind of manufacture method of OLED mask plate, reduce the cost of manufacture of OLED mask plate.
The manufacture method of described OLED mask plate includes：
One substrate is provided；
Sequentially form first buffer layer, the first metal layer and second buffer layer, described second buffer layer on the substrate
For conductive buffer layer；
One insulating barrier is deposited in described second buffer layer by a mask motherboard, the shape of described insulating barrier is covered with described
Pierced pattern on mould motherboard is identical；
Described insulating barrier forms second metal layer, described mask motherboard pattern is transferred to described second metal
Layer；
Peel off described insulating barrier, to expose the pattern of second metal layer；
By figuratum for described tool second metal layer cutting, so that pattern is separated and form several sub- metal levels；
Peel off the described sub- metal level after cutting, so that sub- metal level is separated with described second buffer layer；
Described several sub- metal levels are carried out formation OLED mask plate of throwing the net.
Wherein, described mask motherboard is fixed on a metal framework for several figuratum foils of tool and is formed, described
Foil is obtained by chemical method for etching or electrocasting.
Wherein, on described metal framework, the thickness of the foil at two ends is more than or equal to positioned at described metal frame
The thickness of the foil between the foil at frame two ends.
Wherein, the mode forming described the first metal layer is in vacuum thermal evaporation, electron beam evaporation, sputtering or electroplating technology
One kind.
Wherein, form described first buffer layer, the mode of second buffer layer is vacuum thermal evaporation, electron beam evaporation, sputtering
One of or electroplating technology.
Wherein, described substrate is non-metallic material or metal material.
Wherein, described non-metallic insulation layer is one of Organic substance, organic polymer or organic fluoride.
Wherein, described second metal layer be one of nickel, cobalt, ferrum or by nickel, cobalt, ferrum the alloy arbitrarily forming.
Wherein, described first buffer layer and at least one layer of described the first metal layer, form identical between each layer.
The present invention to carry out making OLED mask plate, that is, with a small amount of by way of chemical method for etching is combined with electrocasting
The mask motherboard that chemical method for etching makes is medium, substantial amounts of can produce the metal with pierced pattern by electrocasting
Piece, that reduces mask plate while obtaining the mask plate of higher quality manufactures cost.Meanwhile, in the system of OLED mask plate
Do not need during making to use the exposure machine used in chemical method for etching and electrocasting and light shield, can simplify production equipment and
Production technology, further reduces cost.
Brief description
For more clearly illustrating structural features and effect of camera device stable equilibrium of the present invention, below in conjunction with the accompanying drawings
To be described in detail with specific embodiment.
Fig. 1 is the manufacture method flow chart of the OLED mask plate of the present invention；
Fig. 2 to Fig. 6 is the profile in each manufacturing process of the OLED mask plate of better embodiment of the present invention；
Fig. 7 is the structural representation of the OLED mask plate of the present invention；
Fig. 8 is the sheet metal cut direction schematic diagram of better embodiment of the present invention.
Fig. 9 is the mask motherboard structure schematic diagram of present pre-ferred embodiments；
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes.Obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiments.Based on this
Embodiment in bright, the every other reality that those of ordinary skill in the art are obtained on the premise of not making creative work
Apply example, all should belong to the scope of protection of the invention.
Refer to Fig. 1, shown in figure is the flow process of the manufacture method of OLED mask plate of better embodiment of the present invention
Figure, the manufacture method of the described OLED mask plate of the present invention comprises the steps：
Refer to Fig. 2, step S1, substrate 40 is provided.Described substrate 40 is thin plate, and described substrate 40 can be metal material
Matter or non-metallic material, such as stainless steel substrate, glass substrate etc..
Step S2, sequentially forms first buffer layer 50, the first metal layer 60, second buffer layer 70 on described substrate 40.
Described first buffer layer 50 is deposited on described substrate 40 by vacuum thermal evaporation mode.It is understood that described first is slow
The depositional mode rushing layer 50 can also be the techniques such as electron beam evaporation, sputtering, plating or vapour deposition.Described first buffer layer 50
At least one layer, that is, according to practical situation needs, described first buffer layer 50 can be one layer, two-layer or multilamellar, and each layer it
Between composition can be the same or different, so that between described substrate 40 and the film layer being deposited in described first buffer layer 50
In conjunction with more firm.Described the first metal layer 60 is deposited in described first buffer layer 50 by sputtering technology.It is appreciated that
, the depositional mode of described the first metal layer 60 can also be the techniques such as electron beam evaporation, vacuum thermal evaporation, plating.Formed
The material of described the first metal layer 60 is mainly ferrum, gold, silver, aluminum, copper etc. and has good electric conductivity and stable metal
Or metal alloy compositions.At least one layer of described the first metal layer 60, its each layer can form for commaterial or
Material composition not of the same race.Described second buffer layer 70 is deposited on described the first metal layer 60 by vacuum thermal evaporation mode,
It is understood that the depositional mode of described second buffer layer 70 can also be electron beam evaporation, sputtering, plating or vapour deposition
Etc. technique.The composition that described second buffer layer 70 is also at least between one layer, and each layer can be the same or different, so that institute
State, between the first metal layer 60 and the film layer being deposited in described second buffer layer 70, there is preferable conjugation, and make described film
Layer is more easily peeled off.Described second buffer layer 70 has good electric conductivity.
Step S3, is formed nonmetallic exhausted in described second buffer layer 70 by the mask motherboard 101 with pierced pattern
Edge layer 80.The shape of described non-metallic insulation layer 80 forms the shape composition phase with the pierced pattern on described mask motherboard 101
With.
Refer to Fig. 9, include step S31 in this step, making of throwing the net has to be covered described in pierced pattern needed for plated film
Mould motherboard 101.The manufacture of described mask motherboard 101 is that the foil 11 with pierced pattern is passed through welding manner admittedly
Determine on metal frame 20, and will cut off positioned at the outer unnecessary foil 11 described in strip of described metal frame 20.Described metal
Thin slice 11 is narrow strip, is obtained by the technique of chemical etching method, electrocasting or other existing fabricating patterned foils
Arrive.
Described metal frame 20 includes long side L and minor face W, and foil 11 described in a plurality of strip is parallel to described minor face W frame
And if be fixed on the described long side L of relative two, be paved with and be fixed on described metal frame 20.Further, described in being set up in
The pattern form of described foil 11 of metal frame 20 diverse location and thickness all can be different, and identical is actual to answer realizing
With realizing the further effect reducing manufacturing cost in the case of effect.
In the embodiment of the present invention, it is fixed to foil 11 described in strip on described metal frame 20 and includes near described in two
Two foil 11a of the minor face W and foil 11b between two described foil 11a.Article two, described metal
Thin slice 11a is the foil having simple pattern, and the foil 11b between two described foil 11a is to have
The foil of the pierced pattern needed for coated basal plate film layer.And because described foil 11 gets over Bao Qicheng within the specific limits
This is higher, and for further reduces cost, described foil 11a can be from the thicker metal of more described foil 11b
Sheeting, certainly, described foil 11a can also be identical with the thickness of described foil 11b.It is understood that
According to actual needs, described foil 11a can be a plurality of, and the further reduces cost in position, and described foil 11a is permissible
For patternless common metal thin slice.
Refer to Fig. 3, include step S32 in this step, by described mask motherboard 101 in described second buffer layer 70
Upper formation non-metallic insulation layer 80.Pierced pattern in the shape of described non-metallic insulation layer 80 and described mask motherboard 101
Shape is identical.The specific implementation of described non-metallic insulation layer 80 is that described mask motherboard 101 is placed in described second buffering
Between layer 70 and deposition material, described deposition material is non-metal insulating material.By hot evaporation process, described deposition material is worn
Cross the pierced pattern on described mask motherboard 101 to deposit in described second buffer layer 70, thus formed having and described mask
The non-metallic insulation layer 80 of the pattern identical of motherboard 101.Described non-metallic insulation layer 80 can be Organic substance, organic polymer
In the non-metal insulating materials such as thing, organic fluoride any one.
Refer to Fig. 4, step S4, the second metal conducting layer 90 is formed in described second buffer layer 70 by electrocasting.
Described second metal conducting layer 90 is laminated in described second buffer layer 70, and described non-metallic insulation layer 80 is located at described second
On cushion 70 and be embedded in described second metal conducting layer 90.Its concrete generation type is, will be obtained in step S3
Substrate is placed in chemical drugs liquid bath, and described substrate is energized.Because described non-metallic insulation layer 80 is non-conductive, described
Non-metallic insulation layer 80 will not change；And described second buffer layer 70 area in addition to described non-metallic insulation floor 80 covers
Domain, because described second buffer layer 70 is conductive buffer layer, is grown into out described on the surface of described second buffer layer 70
Second metal conducting layer 90.Now, described second metal conducting layer 90 has and described non-metallic insulation layer 80 identical pattern,
I.e. the pattern on described mask motherboard 101 is transferred on described second metal conducting layer 90.In described chemical drugs liquid bath be containing
The liquid compound of the metallic elements such as ferrum, cobalt, nickel, by changing the composition of liquid compound in described chemical drugs liquid bath, permissible
Obtain forming different described second metal conducting layers 90.Described second metal conducting layer 90 can be monolayer or multilamellar, and
Any alloy group that described second metal conducting layer 90 is made up of metals such as nickel, cobalt, ferrum or is made up of metals such as nickel, cobalt, ferrum
Become.Wherein, each layer composition material of the second metal conducting layer 90 described in multilamellar can for same metal or alloy material it is also possible to
For metal or alloy material not of the same race.
Refer to Fig. 5, step S5, peel off described non-metallic insulation layer 80.Peel off described non-metallic insulation layer after 80s, described
Second metal conducting layer 90 is revealed with described mask motherboard identical pierced pattern.
Refer to Fig. 8, step S6, cut described second metal conducting layer 90.Along the described cutting the of the cutting of direction shown in I-I
Two metal conducting layers 90, that is, parallel to described mask motherboard 101 identical patterns in described long side L direction cutting described the
Two metal conducting layers 90.By cutting, described second metal conducting layer 90 becomes the metal conducting layer of strip, described metallic conduction
The pattern of layer 90 separately forms several sub- metal levels.It is understood that this step can be omitted.
Refer to Fig. 6, step S7, peel off described second metal conducting layer 90 after cutting.Peel off described the after cutting
Two metal conducting layers 90, make described second metal conducting layer 90 after cutting separate with described second buffer layer 70, will be described
Sub- metal level is separated with described second buffer layer 70, stripped after the described sub- metal level that obtains to be the present invention to be obtained
Sheet metal 10.
In the embodiment of the present invention, it is fixed to two described metal foil near two described minor face W on described metal frame 20
Piece 11a is the foil with simple pattern, and the described foil 11b between two described foil 11a is
There is the foil of pierced pattern.There is simple pattern at the two ends of the described sheet metal 10 then obtaining, and interposition is equipped with hollow out figure
Case.It is understood that in the case of obtaining the preferably described sheet metal 10 of quality, described step S6 is with step S7 sequentially
Line translation can be entered.
Please again refer to Fig. 7, step S8, stripped after described second metal conducting layer 90 that obtains carry out throwing the net being formed
OLED mask plate 100.The described sheet metal 10 that step S7 is obtained is fixedly welded on described metal frame 20, cuts off and exposes institute
State the part of metal frame 20.In order to preferably carry out operation of throwing the net, the welding direction of described sheet metal 10 is parallel to described short
The direction of side W.Because the cut direction of the second metal conducting layer 90 described in step S6 is parallel to described mask motherboard 101
The direction of described long side L it is known that, the length of the described sheet metal obtaining in step S7 is the length of the long side L of described metal frame 20
Degree, therefore, when described sheet metal 10 is welded and fixed parallel to described minor face W, the two ends of described sheet metal 10 can be exposed
Outside described metal frame 20, expose the part outside described metal frame 20 and be cut away and obtain described mask plate 100.Throw the net and welded
Cheng Zhong, described sheet metal 10 two ends simple pattern partly can in the tension force being to disperse described sheet metal 10 each position of throwing the net,
Thus improving the yield rate thrown the net, improve production efficiency, and reduce production cost.In shear history, described sheet metal 10
The simple pattern part at two ends is sheared.
By the manufacture method of OLED mask plate of the present invention by covering described in being obtained with the method for chemical etching
Mould motherboard 101 is as medium, and combines electroforming process, can be obtained in a large number and have the described OLED of good practical application effect and cover
Template 100, is that the making of OLED mask plate provides a kind of new mode, and reduces production cost.And it is heretofore described
Do not need in the manufacture process of OLED mask plate 100 to use exposure machine and light shield, production equipment and production technology can be simplified, from
And further reduce and manufacture cost, there is splendid practical application effect.
The above, the only specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, and any
Those familiar with the art the invention discloses technical scope in, can easily expect various equivalent modifications or
Replace, these modifications or replacement all should be included within the scope of the present invention.Therefore, protection scope of the present invention Ying Yiquan
The protection domain that profit requires is defined.
Claims (10)
1. a kind of manufacture method of OLED mask plate is it is characterised in that the manufacture method of described OLED mask plate includes：
One substrate is provided；
Sequentially form first buffer layer, the first metal layer and second buffer layer on the substrate, described second buffer layer is to lead
Electric cushion；
One insulating barrier is deposited in described second buffer layer by a mask motherboard, the shape of described insulating barrier is female with described mask
Pierced pattern on plate is identical；
Described insulating barrier forms second metal layer, described mask motherboard pattern is transferred to described second metal layer；
Peel off described insulating barrier, to expose the pattern of second metal layer；
By figuratum for described tool second metal layer cutting, so that pattern is separated and form several sub- metal levels；
Peel off the described sub- metal level after cutting, so that sub- metal level is separated with described second buffer layer；
Described several sub- metal levels are carried out formation OLED mask plate of throwing the net.
2. the manufacture method of OLED mask plate as claimed in claim 1 is it is characterised in that described mask motherboard has for several
The foil of pattern is fixed to and is formed on a metal framework, and described foil is obtained by chemical method for etching or electrocasting.
3. the manufacture method of OLED mask plate as claimed in claim 2 is it is characterised in that be located at two ends on described metal framework
The thickness of foil be more than or equal to the thickness of foil between the foil at described metal framework two ends
Degree.
4. the manufacture method of OLED mask plate as claimed in claim 1 is it is characterised in that form the side of described the first metal layer
Formula is one of vacuum thermal evaporation, electron beam evaporation, sputtering or electroplating technology.
5. OLED mask plate as claimed in claim 1 manufacture method it is characterised in that formed described first buffer layer, the
The mode of two cushions is one of vacuum thermal evaporation, electron beam evaporation, sputtering or electroplating technology.
6. OLED mask plate as claimed in claim 1 manufacture method it is characterised in that described substrate be non-metallic material or
Metal material.
7. the manufacture method of OLED mask plate as claimed in claim 1 is it is characterised in that described non-metallic insulation layer is organic
One of thing, organic polymer or organic fluoride.
8. OLED mask plate as claimed in claim 1 manufacture method it is characterised in that described second metal layer be nickel, cobalt,
One of ferrum or by nickel, cobalt, ferrum the alloy arbitrarily forming.
9. the manufacture method of OLED mask plate as claimed in claim 1 is it is characterised in that described first buffer layer and described
At least one layer of one metal level, forms identical between each layer.
10. the manufacture method of OLED mask plate as claimed in claim 1 is it is characterised in that described first buffer layer and described
At least one layer of the first metal layer, forms different between each layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611074695.3A CN106410064B (en) | 2016-11-29 | 2016-11-29 | The production method of OLED mask plates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611074695.3A CN106410064B (en) | 2016-11-29 | 2016-11-29 | The production method of OLED mask plates |
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| Publication Number | Publication Date |
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| CN106410064A true CN106410064A (en) | 2017-02-15 |
| CN106410064B CN106410064B (en) | 2018-05-25 |
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| CN201611074695.3A Active CN106410064B (en) | 2016-11-29 | 2016-11-29 | The production method of OLED mask plates |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107130209A (en) * | 2017-06-30 | 2017-09-05 | 京东方科技集团股份有限公司 | Mask plate, the manufacture method of mask plate and evaporation coating device |
| CN108034923A (en) * | 2018-01-24 | 2018-05-15 | 武汉华星光电半导体显示技术有限公司 | Mask assembly, mask frame and mask support frame |
| CN109546010A (en) * | 2018-10-16 | 2019-03-29 | 武汉华星光电半导体显示技术有限公司 | For making the mask structure and manufacture method of mask of pixel unit on substrate |
| CN110506342A (en) * | 2017-04-07 | 2019-11-26 | 创造未来有限公司 | Fine metal mask manufacture method |
| TWI731747B (en) * | 2020-07-15 | 2021-06-21 | 利佳精密科技股份有限公司 | Light-emitting diode epitaxy growth base system method and products |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110506342A (en) * | 2017-04-07 | 2019-11-26 | 创造未来有限公司 | Fine metal mask manufacture method |
| CN110506342B (en) * | 2017-04-07 | 2021-03-30 | 创造未来有限公司 | Method for manufacturing fine metal mask and fine metal mask for manufacturing light emitting element |
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| CN108034923A (en) * | 2018-01-24 | 2018-05-15 | 武汉华星光电半导体显示技术有限公司 | Mask assembly, mask frame and mask support frame |
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| CN109546010A (en) * | 2018-10-16 | 2019-03-29 | 武汉华星光电半导体显示技术有限公司 | For making the mask structure and manufacture method of mask of pixel unit on substrate |
| TWI731747B (en) * | 2020-07-15 | 2021-06-21 | 利佳精密科技股份有限公司 | Light-emitting diode epitaxy growth base system method and products |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106410064B (en) | 2018-05-25 |
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