TWI731747B - Light-emitting diode epitaxy growth base system method and products - Google Patents

Abstract

A light-emitting diode epitaxial growth substrate method, including a mold substrate preparation procedure, an electroforming template preparation procedure, a first surface layer electroforming deposition procedure, a base layer electroforming deposition procedure, a second surface layer electroforming deposition procedure, and an epitaxial growth substrate In the production process, the nickel-based alloy base layer of the substrate has good rigidity and thermal shrinkage stability. In addition, the first and second conductive surface layers of the substrate are conductive, so that the epitaxy is stable to establish electrodes on the second conductive surface layer of the substrate; and conductive The panel can be easily removed and separated from the surface of the first conductive surface of the substrate, so that the LED crystal grain manufacturing process eliminates the cutting or division process, which effectively overcomes the difficulty of nano/micro LED crystal particle division, and the substrate With good heat dissipation, it also enables the use of high-density LED crystal grains to obtain good luminous efficiency and quality.

Description

Light-emitting diode epitaxy growth base system method and products

The present invention relates to a base system method, in particular to a light-emitting diode epitaxial growth base system method that improves the poor heat dissipation of crystal grains and is difficult to cut.

According to, during the process of making LED dies, the choice of substrate is one of the keys to the quality of epitaxial growth; there are two important reference factors when choosing substrate materials; the first is the matching degree of lattice constants , The second is heat shrinkage stability. The lattice constant will produce defects at the interface between the epitaxial layer and the substrate, and even cracks at the surface to damage the structure. The thermal shrinkage stability of the substrate also has a great influence on the epitaxy. The growth strength of the epitaxy is quite high. When the growth is over, during the shrinking process from high temperature to room temperature, if the thermal shrinkage stability of the substrate is not good, it is easy to cause the The crystal film layer is cracked. In order to meet the aforementioned factors, most of the LRD die of the light-emitting diode is made by choosing a sapphire substrate to grow the epitaxial crystal. However, the heat dissipation problem of the sapphire substrate is not good, and the large amount of heat generated by the carrier bonding process is limited to the active layer. Nearby, high density or high temperature will easily cause the influence of luminous efficiency, wavelength, saturation current, and even the destruction of the structure; in addition, the sapphire substrate is very hard and difficult to cut. It is intended to be cut into millimeters with a side length of less than 1 millimeter (mm). When the light-emitting diode (Mini LED) dies or the side length of the micro-light-emitting diode (Micro LED) dies are less than 75 microns (um), there are extremely high cutting difficulties or high cutting processing costs.

A common practice is to use a nickel-iron alloy substrate with high thermal shrinkage stability to replace the sapphire substrate. Although it can improve the problem of poor heat dissipation of the crystal grains, the nickel-iron alloy substrate is difficult to etch and cut. However, the extremely high temperature of laser cutting has the problem of bending and deformation of the substrate. As a result, the high-density array of mini LED and/or micro LED (Micro LED) die is divided and still needs to be divided. Technical overcoming or new solutions.

Therefore, in view of the above-mentioned problems in the conventional light-emitting diode epitaxy manufacturing method, how to develop a large-scale processing method to actually use the ardent expectations of consumers is also the goal and direction that the relevant industry must strive to develop and breakthrough. In view of this, the inventor has been engaged in the manufacturing, development and design of related products for many years. Aiming at the above-mentioned goals, after detailed design and careful evaluation, the method and products of the present invention are finally practical.

That is, the present invention provides a light emitting diode epitaxial growth substrate method, including a mold substrate preparation procedure, an electroforming template preparation procedure, a first surface layer electroforming deposition procedure, a base layer electroforming deposition procedure, The second surface layer electroforming deposition process and an epitaxial growth substrate production process;

The preparation procedure of the molding substrate is the preparation of more than one conductive panel, each covering at least one insulating material layer to form more than one molding substrate;

The preparation procedure of the electroforming template is to set a light shield with more than one light-transmitting area on the surface of the insulating material layer of the molding substrate, expose the light-transmitting area with an exposure machine, and shape the insulating material layer corresponding to the In the light-transmitting area, more than one stereotyped photoresist wall is formed, and the insulating material layer material other than the photoresist wall is removed, so that a plurality of arrays of deposition mold cavities are separated by the photoresist wall area on the conductive panel , Complete the preparation of an electroforming template;

The first surface layer electroforming deposition procedure is to place the electroforming template in an electroforming tank for the first electroforming deposition, and deposit a layer on the exposed part of the conductive panel in each deposition cavity Conductive metal material, so that a first conductive surface layer is formed in each deposition cavity;

The base layer electroforming deposition procedure is to place the electroforming template in an electroforming tank for the second electroforming deposition, and deposit a layer of nickel-based alloy material on the exposed part of the first conductive surface layer in each deposition cavity , So that a nickel-based alloy base layer is formed on the first conductive surface layer in each deposition mold cavity;

The second surface layer electroforming deposition procedure is to place the electroforming template in an electroforming tank for the third electroforming deposition, and deposit a layer of conductive metal on the exposed part of the nickel-based alloy base layer in each deposition cavity Material such that a second conductive surface layer is formed on the nickel-based alloy base layer in each deposition cavity;

The production process of the epitaxial growth substrate is to perform the removal of the photoresist wall on the electroforming template, so that a plurality of mutually independent substrates with an array layout are obtained on the conductive panel;

The nickel-based alloy base layer of each substrate has good rigidity and thermal shrinkage stability, and the first and second conductive surface layers of the substrate have conductivity, so that the epitaxial crystal can be stabilized on the second conductive surface layer of the substrate Growing and establishing electrodes; and the conductive panel can be easily detached from the surface of the first conductive surface of the substrate. It also makes the light-emitting diode crystal grain manufacturing process, eliminating the need for cutting or splitting processes, and effectively overcomes nano/micro Difficulties in the division of light-emitting diode crystal grains (reducing the cost of crystal grain production); in addition, the matrix has good heat dissipation, which enables the use of high-density light-emitting diode crystal grains to obtain good luminous efficiency and quality.

The second object of the present invention is to provide a light-emitting diode epitaxial growth substrate method, wherein the substrate electroforming deposition process is performed on the exposed first conductive surface layer of each deposition cavity to deposit a layer of Invar steel (also known as Invar, Hengfan steel, Invar steel) material, make the nickel-based alloy base layer composed of invariable steel material formed on the first conductive surface layer; The extremely small expansion coefficient characteristics of the steel (Invar effect) enable the substrate to provide epitaxial growth and obtain a highly stable benefit of epitaxial growth quality.

Another object of the present invention is to provide a light-emitting diode epitaxial growth substrate method, wherein the electroforming template preparation process is to expose the light-transmitting area of the light shield with an exposure machine, shape the photoresist wall and remove it The insulating material layer material other than the photoresist wall forms the deposition mold cavity; by allowing the thickness of the photoresist wall to be less than 10 microns (um) and the side length of the deposition mold cavity to be less than 50 microns (um), so The substrate produced by the epitaxial growth substrate production process promotes the epitaxial growth, and does not require wafer density or precise segmentation, and it is easy to manufacture mini LEDs and/or micro LEDs. Body (Micro LED) die.

Another object of the present invention is to provide a light-emitting diode epitaxial growth substrate method, wherein the first surface layer electroforming deposition process, the base layer electroforming deposition process and the second surface layer electroforming deposition process are sequentially Deposit the first conductive surface layer, the nickel-based alloy base layer and the second conductive surface layer in the deposition cavity of the electroforming template, and the deposition density ratio of the first conductive surface layer, the nickel-based alloy base layer and the second conductive surface layer is 1:3 Ratio 1; By the effect of the thickness of the nickel-based alloy base layer being three times the thickness of the first and second conductive surface layers, the resulting base body is used for epitaxial growth, with good mechanical strength and a small expansion coefficient.

With regard to the techniques, methods and effects adopted by the present invention, the preferred embodiments are described in detail in conjunction with the drawings. It is believed that the above-mentioned purpose, structure and features of the present invention should be understood in depth and concretely.

10: Preparing procedure for molding substrate

11: Conductive panel

12: Insulating material layer

15: Molding substrate

20: Electroforming template preparation procedure

21: Lens hood

211: Transmitting Area

22: Light resistance wall

23: Deposition mold cavity

25: Electroforming template

30: The first surface layer electroforming deposition procedure

32: The first conductive surface layer

40: Basic layer electroforming deposition procedure

42: Nickel-based alloy base layer

50: The second surface layer electroforming deposition procedure

52: second conductive surface layer

60: Epitaxy growth substrate production process

65: matrix

Figure 1 is a program flow chart of the application method of the present invention.

Fig. 2A is a cross-sectional view of the preparation procedure of the molded substrate of the present invention.

2B is a cross-sectional view of the first embodiment of the preparation procedure of the electroforming template of the present invention.

2C is a cross-sectional view of the second embodiment of the preparation procedure of the electroforming template of the present invention.

Fig. 3A is an electroforming implementation diagram of the first surface layer electroforming deposition procedure of the present invention.

3B is a schematic cross-sectional view of the electroforming of the first conductive surface layer of the present invention.

Fig. 4A is an electroforming implementation diagram of the base layer electroforming deposition process of the present invention.

4B is a schematic cross-sectional view of the nickel-based alloy base layer formed by electroforming of the present invention.

Fig. 5A is an electroforming implementation diagram of the second surface layer electroforming deposition procedure of the present invention.

FIG. 5B is a schematic cross-sectional view of electroforming the second conductive surface layer of the present invention.

6A is a schematic cross-sectional view of the substrate of the epitaxial growth substrate production process of the present invention.

Fig. 6B is a top view of a plurality of substrates of the present invention.

Please refer to FIG. 1, the present invention is to provide a light emitting diode epitaxial growth substrate method, including a mold substrate preparation procedure 10, an electroforming template preparation procedure 20, and a first surface layer electroforming deposition procedure 30. A base layer electroforming deposition process 40, a second surface layer electroforming deposition process 50, and an epitaxial growth substrate production process 60;

Please refer to FIG. 2A in conjunction with FIG. 1. The molding substrate preparation process 10 is on more than one conductive panel 11, each covered with at least one insulating material layer 12 (photoresist or non-conductor material layer) to form one Preparation of the above-mentioned molding substrate 15;

Please refer to FIGS. 2B and 2C in conjunction with FIG. 1. The electroforming template preparation process 20 is to provide a light shield 21 with more than one light-transmitting area 211 on the surface of the insulating material layer 12 of the molding substrate 15 , Expose the light-transmitting area 211 with an exposure machine to shape the insulation The light-transmitting area 211 corresponding to the material layer 12 forms more than one stereotyped photoresist wall 22, and the insulating material layer 12 other than the photoresist wall 22 is removed (the medicine is removed) to make the conductive panel 11 Above, a plurality of arrays of deposition mold cavities 23 are separated by the photoresist wall 22 to complete the preparation of an electroforming template 25;

Please refer to FIG. 3A and FIG. 3B in conjunction with FIG. 1. The first surface layer electroforming deposition process 30 is to place the electroforming template 25 in an electroforming tank for the first electroforming deposition (a conductive metal is placed on the anode). Material, the cathode is placed on the electroforming template 25), and a layer of conductive metal material (may be copper Cu) is deposited on the exposed part of the conductive panel 11 in each deposition cavity 23, so that each deposition cavity 23 Each is formed with a first conductive surface layer 32;

Please refer to FIGS. 4A and 4B in conjunction with FIG. 1. The base layer electroforming deposition process 40 is to place the electroforming template 25 in an electroforming tank (may be another electroforming tank) for a second electroforming Deposition (a nickel-based alloy material is placed on the anode, and the electroforming template 25 is placed on the cathode), and a layer of nickel-based alloy material is deposited on the exposed part of the first conductive surface layer 32 in each of the deposition cavities 23, so that each of the A nickel-based alloy base layer 42 is formed on the first conductive surface layer 32 in the deposition cavity 23;

Please refer to FIG. 5A and FIG. 5B in conjunction with FIG. 1. The second surface layer electroforming deposition process 50 is to place the electroforming template 25 in the electroforming tank (it can be the same as the electroforming tank for the first electroforming deposition). ) In the third electroforming deposition (a conductive metal material is placed on the anode, and the electroforming template 25 is placed on the cathode), and a layer of conductive metal is deposited on the exposed part of the nickel-based alloy base layer 42 in each deposition cavity 23 The material (may be copper Cu), so that a second conductive surface layer 52 is formed on the nickel-based alloy base layer 42 in each deposition cavity 23;

Please refer to Figure 6A, Figure 6B and shown in Figure 1, the epitaxial growth substrate production process Step 60 is to remove the photoresist wall 22 (medicine removal) on the electroforming template 25, so that a plurality of independent and arrayed substrates 65 are obtained on the conductive panel 11 (the side length of the present invention is 50 microns um);

Since the nickel-based alloy base layer 42 of each substrate has good rigidity and thermal shrinkage stability, and the first and second conductive surface layers 32, 52 of the base 65 have conductivity, the epitaxial crystal can be stabilized on the base 65 The second conductive surface layer 52 grows and establishes electrodes; and the conductive panel 11 can be easily detached from the surface of the first conductive surface layer 32 of the substrate 65, which also enables the light-emitting diode die manufacturing process, eliminating the need for cutting Or the division process can effectively overcome the difficulty of nano/micro light-emitting diode grain division (reducing the cost of crystal grain production); in addition, the base 65 has good heat dissipation, which makes it possible to use high-density light-emitting diode crystal grains. , To obtain good luminous efficiency and quality.

Preferably, referring to FIG. 4A, FIG. 4B, and FIG. 6A in conjunction with FIG. 1, the base layer electroforming deposition process 40 is to deposit a layer on the exposed part of the first conductive surface layer 32 of each deposition cavity 23 Invariable steel (also known as Invar, Hengfan steel, Invar steel) material, so that the first conductive surface layer 32 forms the nickel-based alloy base layer 42 composed of invariable steel material; The extremely small expansion coefficient characteristic (Invar effect) enables the substrate 65 to provide epitaxial growth and obtain a highly stable benefit of epitaxial growth quality.

More preferably, referring to FIG. 2B in conjunction with FIG. 1, the electroforming template preparation process 20 is to expose the light-transmitting area 211 of the light-shielding mask 21 with an exposure machine, shape the photo-resist wall 22 and remove the photo-resist wall 22 In addition to the insulating material layer 12, the deposition mold cavity 23 is formed; the thickness of the photoresist wall 22 allows the size below 10 micrometers (um) and the side length of the deposition mold cavity 23 allows the size below 50 micrometers (um), So that the epitaxial growth matrix production process 60 produced The substrate 65 promotes the growth of the epitaxial crystal, and does not require wafer density or precise segmentation, and it is easy to manufacture mini LEDs and/or micro LEDs.

Finally, please refer to FIGS. 1, 5B, and 6A. The first surface layer electroforming deposition process 30, the base layer electroforming deposition process 40, and the second surface layer electroforming deposition process 50 are in sequence on the electroforming template 25 The first conductive surface layer 32, the nickel-based alloy base layer 42, and the second conductive surface layer 52 are deposited in the deposition cavity 23. The deposition density ratio of the first conductive surface layer 32, the nickel-based alloy base layer 42 and the second conductive surface layer 52 is 1 ratio 3 to 1 (10um: 30um: 10um in the present invention); the thickness of the nickel-based alloy base layer 42 is three times the thickness of the first and second conductive surface layers 32 and 52, so that the resulting base body 65 Used for epitaxial growth, with good mechanical strength and small expansion coefficient.

Based on the description of the above embodiments, when the operation and use of the present invention and the effects of the present invention can be fully understood, the above embodiments are only the preferred embodiments of the present invention, and the implementation of the present invention cannot be limited by this. The scope, that is, simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the description of the invention, are all within the scope of the present invention.

10: Preparing procedure for molding substrate

20: Electroforming template preparation procedure

30: The first surface layer electroforming deposition procedure

40: Basic layer electroforming deposition procedure

50: The second surface layer electroforming deposition procedure

60: Epitaxy growth substrate production process

Claims (5)

A light-emitting diode epitaxial growth matrix method, including a molding substrate preparation procedure, an electroforming template preparation procedure, a first surface layer electroforming deposition procedure, a base layer electroforming deposition procedure, and a second surface layer electroforming deposition procedure And an epitaxial growth substrate production process; The preparation procedure of the molding substrate is the preparation of more than one conductive panel, each covering at least one insulating material layer to form more than one molding substrate; The preparation procedure of the electroforming template is to set a light shield with more than one light-transmitting area on the surface of the insulating material layer of the molding substrate, expose the light-transmitting area with an exposure machine, and shape the insulating material layer corresponding to the In the light-transmitting area, more than one stereotyped photoresist wall is formed, and the insulating material layer material other than the photoresist wall is removed, so that a plurality of arrays of deposition mold cavities are separated by the photoresist wall area on the conductive panel , Complete the preparation of an electroforming template; The first surface layer electroforming deposition procedure is to place the electroforming template in an electroforming tank for the first electroforming deposition, and deposit a layer of conductive metal material on the exposed part of the conductive panel in each deposition cavity, Forming a first conductive surface layer in each deposition mold cavity; The base layer electroforming deposition procedure is to place the electroforming template in an electroforming tank for the second electroforming deposition, and deposit a layer of nickel-based alloy material on the exposed part of the first conductive surface layer in each deposition cavity , So that a nickel-based alloy base layer is formed on the first conductive surface layer in each deposition mold cavity; The second surface layer electroforming deposition procedure is to place the electroforming template in an electroforming tank for the third electroforming deposition, and deposit a layer of conductive metal on the exposed part of the nickel-based alloy base layer in each deposition cavity Material such that a second conductive surface layer is formed on the nickel-based alloy base layer in each deposition cavity; The production process of the epitaxial growth substrate is to remove the photoresist wall from the electroforming template, so that a plurality of independent substrates with an array layout are obtained on the conductive panel. According to the light-emitting diode epitaxial growth substrate method described in the first item of the scope of patent application, the substrate electroforming deposition process is to deposit a constant layer on the exposed part of the first conductive surface layer of each deposition cavity The steel material is used to form the nickel-based alloy base layer made of unchanging steel material on the first conductive surface layer. According to the light-emitting diode epitaxial growth substrate method described in the first item of the scope of patent application, the preparation procedure of the electroforming template is to expose the light-transmitting area of the light shield with an exposure machine, shape the photoresist wall and remove the light The insulating material layer material other than the barrier wall forms the deposition mold cavity. According to the light-emitting diode epitaxial growth substrate method described in item 1 of the scope of patent application, the first surface layer electroforming deposition process, the base layer electroforming deposition process and the second surface layer electroforming deposition process are sequentially The first conductive surface layer, the nickel-based alloy base layer and the second conductive surface layer are deposited in the deposition cavity of the electroforming template. The deposition density ratio of the first conductive surface layer, the nickel-based alloy base layer and the second conductive surface layer is 1:3 1. A light-emitting diode epitaxial growth substrate product is prepared according to the light-emitting diode epitaxial growth substrate method described in any one of items 1 to 4 in the scope of patent application.

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