CN106409984A - “三明治”型超快光电探测金属超结构的制作方法 - Google Patents
“三明治”型超快光电探测金属超结构的制作方法 Download PDFInfo
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- CN106409984A CN106409984A CN201611092921.0A CN201611092921A CN106409984A CN 106409984 A CN106409984 A CN 106409984A CN 201611092921 A CN201611092921 A CN 201611092921A CN 106409984 A CN106409984 A CN 106409984A
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- 229910021389 graphene Inorganic materials 0.000 claims abstract description 50
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
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- 238000005516 engineering process Methods 0.000 claims description 13
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- 238000005566 electron beam evaporation Methods 0.000 claims description 3
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- 239000010970 precious metal Substances 0.000 abstract 1
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
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- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Computer Hardware Design (AREA)
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CN201611092921.0A CN106409984B (zh) | 2016-12-02 | 2016-12-02 | 一种“三明治”型超快光电探测金属超结构的制作方法 |
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CN201611092921.0A CN106409984B (zh) | 2016-12-02 | 2016-12-02 | 一种“三明治”型超快光电探测金属超结构的制作方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106684199A (zh) * | 2017-02-13 | 2017-05-17 | 中北大学 | 金属微纳超结构表面等离激元超快探测结构 |
CN107436192A (zh) * | 2017-07-12 | 2017-12-05 | 电子科技大学 | 一种基于石墨烯/金属纳米带结构的近红外吸收体 |
CN107561028A (zh) * | 2017-06-30 | 2018-01-09 | 国家纳米科学中心 | 用于增强红外光谱探测的金属‑石墨烯等离激元器件及制备方法 |
CN110729542A (zh) * | 2019-09-19 | 2020-01-24 | 东南大学 | 基于石墨烯的人工表面等离激元一体化动态可调传输器件 |
CN110927838A (zh) * | 2018-09-20 | 2020-03-27 | 电子科技大学中山学院 | 一种石墨烯增强吸收的金属微纳结构及其制备方法 |
CN114373825A (zh) * | 2022-01-10 | 2022-04-19 | 深圳迈塔兰斯科技有限公司 | 基于二维材料的异质结器件及包含其的光电探测器和方法 |
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US20120325296A1 (en) * | 2011-06-24 | 2012-12-27 | Samsung Electronics Co., Ltd. | Graphene-on-substrate and transparent electrode and transistor including the graphene-on-substrate |
KR101317708B1 (ko) * | 2012-04-20 | 2013-10-17 | 국립대학법인 울산과학기술대학교 산학협력단 | 3차원 나노발포체 구조의 그래핀 제조방법 |
US20140319357A1 (en) * | 2013-04-26 | 2014-10-30 | Mitsubishi Electric Corporation | Electromagnetic wave detector and electromagnetic wave detector array |
CN104201221A (zh) * | 2014-08-28 | 2014-12-10 | 中国科学院半导体研究所 | 基于石墨烯-金属纳米颗粒复合材料的太阳能电池 |
CN104678597A (zh) * | 2014-07-25 | 2015-06-03 | 电子科技大学 | 一种石墨烯场效应晶体管太赫兹波调制器及其制备方法 |
CN204424292U (zh) * | 2015-03-17 | 2015-06-24 | 常熟理工学院 | 一种表面等离增强型石墨烯硅基太阳能电池 |
CN105023969A (zh) * | 2015-06-11 | 2015-11-04 | 上海电力学院 | 一种基于金属纳米结构的光吸收增强型石墨烯晶体管 |
CN105355702A (zh) * | 2015-11-17 | 2016-02-24 | 国家纳米科学中心 | 用于增强红外光谱探测的石墨烯等离激元器件及制备方法 |
CN205175910U (zh) * | 2015-11-25 | 2016-04-20 | 广西师范大学 | 石墨烯材料的表面等离子波导痕量气体传感装置 |
CN103715291B (zh) * | 2013-12-30 | 2016-05-25 | 中国科学院上海微系统与信息技术研究所 | 一种太赫兹光电探测器 |
-
2016
- 2016-12-02 CN CN201611092921.0A patent/CN106409984B/zh not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US20120325296A1 (en) * | 2011-06-24 | 2012-12-27 | Samsung Electronics Co., Ltd. | Graphene-on-substrate and transparent electrode and transistor including the graphene-on-substrate |
KR101317708B1 (ko) * | 2012-04-20 | 2013-10-17 | 국립대학법인 울산과학기술대학교 산학협력단 | 3차원 나노발포체 구조의 그래핀 제조방법 |
US20140319357A1 (en) * | 2013-04-26 | 2014-10-30 | Mitsubishi Electric Corporation | Electromagnetic wave detector and electromagnetic wave detector array |
CN103715291B (zh) * | 2013-12-30 | 2016-05-25 | 中国科学院上海微系统与信息技术研究所 | 一种太赫兹光电探测器 |
CN104678597A (zh) * | 2014-07-25 | 2015-06-03 | 电子科技大学 | 一种石墨烯场效应晶体管太赫兹波调制器及其制备方法 |
CN104201221A (zh) * | 2014-08-28 | 2014-12-10 | 中国科学院半导体研究所 | 基于石墨烯-金属纳米颗粒复合材料的太阳能电池 |
CN204424292U (zh) * | 2015-03-17 | 2015-06-24 | 常熟理工学院 | 一种表面等离增强型石墨烯硅基太阳能电池 |
CN105023969A (zh) * | 2015-06-11 | 2015-11-04 | 上海电力学院 | 一种基于金属纳米结构的光吸收增强型石墨烯晶体管 |
CN105355702A (zh) * | 2015-11-17 | 2016-02-24 | 国家纳米科学中心 | 用于增强红外光谱探测的石墨烯等离激元器件及制备方法 |
CN205175910U (zh) * | 2015-11-25 | 2016-04-20 | 广西师范大学 | 石墨烯材料的表面等离子波导痕量气体传感装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106684199A (zh) * | 2017-02-13 | 2017-05-17 | 中北大学 | 金属微纳超结构表面等离激元超快探测结构 |
CN106684199B (zh) * | 2017-02-13 | 2018-04-03 | 中北大学 | 金属微纳超结构表面等离激元超快探测结构 |
CN107561028A (zh) * | 2017-06-30 | 2018-01-09 | 国家纳米科学中心 | 用于增强红外光谱探测的金属‑石墨烯等离激元器件及制备方法 |
CN107561028B (zh) * | 2017-06-30 | 2020-09-01 | 国家纳米科学中心 | 用于增强红外光谱探测的金属-石墨烯等离激元器件及制备方法 |
CN107436192A (zh) * | 2017-07-12 | 2017-12-05 | 电子科技大学 | 一种基于石墨烯/金属纳米带结构的近红外吸收体 |
CN110927838A (zh) * | 2018-09-20 | 2020-03-27 | 电子科技大学中山学院 | 一种石墨烯增强吸收的金属微纳结构及其制备方法 |
CN110729542A (zh) * | 2019-09-19 | 2020-01-24 | 东南大学 | 基于石墨烯的人工表面等离激元一体化动态可调传输器件 |
CN114373825A (zh) * | 2022-01-10 | 2022-04-19 | 深圳迈塔兰斯科技有限公司 | 基于二维材料的异质结器件及包含其的光电探测器和方法 |
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