CN104300028B - 以氟化石墨烯为吸收层的紫外雪崩光电探测器及制备方法 - Google Patents
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Abstract
本发明公开了一种以氟化石墨烯为吸收层的紫外雪崩光电探测器及制备方法，所述紫外雪崩光电探测器包括衬底、金属电极、石墨烯叉指电极和氟化石墨烯；氟化石墨烯是一种宽禁带的二维半导体材料，可探测波长小于415nm的光。本发明以氟化石墨烯作为感光材料，石墨烯作为透明叉指电极，可实现对紫外光的探测。氟化石墨烯的电阻可达1TΩ以上，利用氟化石墨烯制作的光电探测器具有非常低的暗电流噪声。本发明以石墨烯和氟化石墨烯两种二维材料为主，可以实现柔性的光电探测器。
Description
技术领域
本发明属于光电探测技术领域，涉及光电探测器件结构，尤其涉及一种以氟化石墨烯为感光材料，石墨烯/氟化石墨烯/石墨烯(MSM)结构的紫外雪崩光电探测器(APD)及制备方法。
背景技术
石墨烯是由单层sp2杂化碳原子构成的蜂窝状二维平面晶体薄膜，具有优异的力、热、光、电等性能。与普通金属不同，石墨烯是一种具有透明和柔性的新型二维导电材料。石墨烯和半导体接触可以形成肖特基结，制备工艺简单，在光电探测领域有广泛应用。
氟化石墨烯是石墨烯的衍生物，利用氟化氙(XeF2)，六氟化硫(SF6)和八氟环丁烷(C4F8)等含氟气体对石墨烯进行氟化，可以制备氟化石墨烯。通过改变石墨烯的氟化率，可以将石墨烯由导体变为半导体或者绝缘体。石墨烯氟化后禁带宽度可从0.0eV增加到3.0eV。氟化石墨烯是一种宽禁带半导体，可以吸收紫外光而透过可光，适合作为紫外光电探测器的感光材料。
发明内容
本发明的目的在于针对现有技术的不足，提供一种以氟化石墨烯为吸收层的紫外雪崩光电探测器及制备方法。
本发明的目的是通过以下技术方案来实现的：一种以氟化石墨烯为吸收层的紫外雪崩光电探测器，包括衬底、金属电极、石墨烯叉指电极和氟化石墨烯；其中，所述衬底的上表面两侧分别覆盖一金属电极；在两个金属电极之间的衬底的上表面、两个金属电极的上表面和内侧壁上覆盖石墨烯叉指电极，金属电极上表面的石墨烯叉指电极的两翼的覆盖范围小于金属电极的边界；在两个金属电极之间的衬底和石墨烯叉指电极的上表面覆盖氟化石墨烯。
进一步地，所述的衬底为绝缘材料，选自二氧化硅、云母、PDMS或PI。
进一步地，所述的金属电极是金属薄膜电极，材料为铝、金或金铬合金。
进一步地，所述的石墨烯叉指电极为单层或多层石墨烯，形状为叉指。
进一步地，所述的氟化石墨烯为单层或多层氟化石墨烯。
制备上述以氟化石墨烯为吸收层的紫外雪崩光电探测器的方法，包括以下步骤：
(1)采用二氧化硅或云母作为绝缘的衬底，或者在硅衬底上旋涂PDMS或PI形成均匀的薄膜，加热让其固化，形成柔性的衬底；
(2)在衬底表面光刻出金属电极图形，然后采用电子束蒸发技术，首先生长厚度约为5nm和的Cr黏附层，然后生长50nm的Au电极；
(3)石墨烯薄膜的制备：采用化学气相沉积方法在铜箔基底上制备石墨烯薄膜；
(4)在两个金属电极之间的衬底的上表面、两个金属电极的上表面和内侧壁上覆盖石墨烯薄膜；其中，石墨烯的转移方法为：将带有铜箔基底的石墨烯薄膜表面均匀涂覆一层聚甲基丙烯酸甲酯薄膜，然后放入刻蚀溶液中4h腐蚀去除铜箔，留下由聚甲基丙烯酸甲酯薄膜支撑的石墨烯薄膜；将聚甲基丙烯酸甲酯薄膜支撑的石墨烯薄膜用去离子水清洗后转移到两个金属电极之间的衬底的上表面、两个金属电极的上表面和内侧壁上；最后用丙酮和异丙醇去除聚甲基丙烯酸甲酯；其中，所述刻蚀溶液由CuSO4、HCl和水组成，CuSO4：HCl：H2O＝10g:50ml:50ml；
(5)对步骤(4)中转移的石墨烯薄膜光刻出叉指电极图形，将光刻好的石墨烯薄膜放入反应离子刻蚀系统真空腔室，通入氧气对石墨烯薄膜进行刻蚀，获得石墨烯叉指电极；
(6)氟化石墨烯的制备和转移方法，具体方法如下：
(a)将带有铜箔基底的石墨烯薄膜进行氟化：将石墨烯薄膜放入反应离子刻蚀系统的真空腔室中，采用六氟化硫等离子体对石墨烯薄膜表面进行氟化，形成氟化石墨烯；
(b)将步骤(a)中形成的氟化石墨烯转移至两个金属电极之间的衬底和叉指电极的上表面；其中，氟化石墨烯薄膜的转移方法与步骤(4)中石墨烯的转移方法相同。
(7)当采用柔性的衬底时，揭下制备有氟化石墨烯为吸收层的紫外雪崩光电探测器的PDMS或者PI。
本发明采用宽禁带的氟化石墨烯作为感光材料，吸收紫外光，过滤可见光，实现紫外探测；石墨烯作为柔性透明电极和有源层，石墨烯与氟化石墨烯接触可以形成肖特基结，石墨烯电极是透明的，可以增强氟化石墨烯对紫外光的吸收；氟化石墨烯的电阻可达1TΩ以上，大大降低暗电流。以氟化石墨烯为吸收层，石墨烯为透明电极的二维紫外雪崩光电探测器将在柔性器件中有广泛应用。
与现有技术相比，本发明具有以下有益效果：
1、紫外光入射到以氟化石墨烯为吸收层的紫外雪崩光电探测器表面，被石墨烯和氟化石墨烯吸收。较大反向偏压加到器件两端，产生的光生载流子(空穴电子对)在APD光二极管表面高电场作用下高速运动，在运动过程中通过碰撞电离效应，产生数量为初始电子空穴对的几十倍二次、三次新空穴电子对，从而形成很大的光信号电流，具有很高的增益。
2、石墨烯和氟化石墨烯形成肖特基浅结，入射紫外光容易被吸收，产生的电子空穴很快被内部电场分离。在紫外光区域，量子效率很高。
3、石墨烯作为透明电极，增强入射光吸收，提高光生电流，具有很高的光学响应。
4、叉指状的石墨烯电极之间可以形成很强的电场，更容易产生雪崩效应，降低能耗；相邻电极之间距离小，石墨烯的载流子迁移率很大，可以提高器件的时间响应。
5、氟化石墨烯的电阻很高，大大降低暗电流，具有很高的开关比。
6、本发明提供的以氟化石墨烯为吸收层的紫外雪崩光电探测器所用材料以石墨烯为基本材料，制备过程简单，成本低，易于实现柔性光电探测器。
附图说明
图1示出了以氟化石墨烯为吸收层的紫外雪崩光电探测器的结构示意图；
图2示出了本发明中实施例所制备的MSM APD紫光电探测器的石墨烯叉指电极光学显微镜图；
图中，衬底1、金属电极2、石墨烯叉指电极3、氟化石墨烯4。
具体实施方式
本发明提供的以氟化石墨烯为吸收层的紫外雪崩光电探测器的工作原理如下：
石墨烯与氟化石墨烯接触形成肖特基结，相邻石墨烯叉指电极与氟化石墨烯形成两个背靠背的肖特基结。两端电极加偏压后，一个肖特基结正向偏置，另一个肖特基结反向偏置。当入射紫外光照射到石墨烯/氟化石墨烯界面，石墨烯和氟化石墨烯吸收入射紫外光并产生电子-空穴对。在电场作用下，空穴流向正电极，电子流向负电极，形成光生电流。叉指状的石墨烯电极之间可以形成很强的电场，光生载流子高速运动，与氟化石墨烯中的原子产生碰撞离子化，更容易产生雪崩效应，实现内部增益，降低能耗。
下面结合附图和实施例对本发明的具体实施方法作进一步的说明。
如图1所示，本发明以氟化石墨烯为吸收层的紫外雪崩光电探测器，包括衬底1、金属电极2、石墨烯叉指电极3和氟化石墨烯4；其中，所述衬底1的上表面两侧分别覆盖一金属电极2；在两个金属电极2之间的衬底1的上表面、两个金属电极2的上表面和内侧壁上覆盖石墨烯叉指电极3，金属电极2上表面的石墨烯叉指电极3的两翼的覆盖范围小于金属电极2的边界；在两个金属电极2之间的衬底1和石墨烯叉指电极3的上表面覆盖氟化石墨烯4。
制作以氟化石墨烯为吸收层的紫外雪崩光电探测器的方法，包括以下步骤：
(1)采用二氧化硅或云母作为绝缘的衬底1，或者在硅衬底上旋涂PDMS或PI形成均匀的薄膜，加热让其固化，形成柔性的衬底1；
(2)在衬底1表面光刻出金属电极2图形，然后采用电子束蒸发技术，首先生长厚度约为5nm和的Cr黏附层，然后生长50nm的Au电极；
(3)石墨烯薄膜的制备：采用化学气相沉积方法(CVD)在铜箔基底上制备石墨烯薄膜；
(4)在两个金属电极2之间的衬底1的上表面、两个金属电极2的上表面和内侧壁上覆盖石墨烯薄膜；其中，石墨烯的转移方法为：将带有铜箔基底的石墨烯薄膜表面均匀涂覆一层聚甲基丙烯酸甲酯(PMMA)薄膜，然后放入刻蚀溶液中4h腐蚀去除铜箔，留下由PMMA支撑的石墨烯薄膜；将PMMA支撑的石墨烯薄膜用去离子水清洗后转移到两个金属电极2之间的衬底1的上表面、两个金属电极2的上表面和内侧壁上；最后用丙酮和异丙醇去除PMMA；其中，所述刻蚀溶液由CuSO4、HCl和水组成，CuSO4：HCl：H2O＝10g:50ml:50ml；
(5)对步骤(4)中转移的石墨烯薄膜光刻出叉指电极图形，将光刻好的石墨烯薄膜放入反应离子刻蚀系统真空腔室，通入氧气(O2)对石墨烯薄膜进行刻蚀，获得石墨烯叉指电极3；
(6)氟化石墨烯4的制备和转移方法，具体方法如下：
(a)将带有铜箔基底的石墨烯薄膜进行氟化：将石墨烯薄膜放入反应离子刻蚀系统的真空腔室中，采用六氟化硫(SF6)等离子体对石墨烯薄膜表面进行氟化，形成氟化石墨烯4；
(b)将步骤(a)中形成的氟化石墨烯4转移至两个金属电极2之间的衬底1和叉指电极3的上表面；其中，氟化石墨烯薄膜4的转移方法与步骤(4)中石墨烯的转移方法相同。
(7)当采用柔性的衬底1时，揭下制备有氟化石墨烯为吸收层的紫外雪崩光电探测器的PDMS或者PI。
对上述以氟化石墨烯为吸收层的紫外雪崩光电探测器加偏压，使其可以产生雪崩效应，实现增益。其中电压的正极和负极分别连接到两个金属电极2上，如图1所示。
图2为本发明实施例所制备的石墨烯叉指电极光学显微镜图片。每根石墨烯叉指电极是连续的，相邻石墨烯叉指电极是断开的。通过本实施例可以获得较高质量的石墨烯叉指电极。
Claims (1)
1.一种制备以氟化石墨烯为吸收层的紫外雪崩光电探测器的方法，所述以氟化石墨烯为吸收层的紫外雪崩光电探测器包括衬底(1)、金属电极(2)、石墨烯叉指电极(3)和氟化石墨烯(4)；其中，所述衬底(1)的上表面两侧分别覆盖一金属电极(2)；在两个金属电极(2)之间的衬底(1)的上表面、两个金属电极(2)的上表面和内侧壁上覆盖石墨烯叉指电极(3)，金属电极(2)上表面的石墨烯叉指电极(3)的两翼的覆盖范围小于金属电极(2)的边界；在两个金属电极(2)之间的衬底(1)和石墨烯叉指电极(3)的上表面覆盖氟化石墨烯(4)；其特征在于，该方法包括以下步骤：
(1)采用二氧化硅或云母作为绝缘的衬底(1)，或者在硅衬底上旋涂PDMS或PI形成均匀的薄膜，加热让其固化，形成柔性的衬底(1)；
(2)在衬底(1)表面光刻出金属电极(2)图形，然后采用电子束蒸发技术，首先生长厚度为5nm和的Cr黏附层，然后生长50nm的Au电极；
(3)石墨烯薄膜的制备：采用化学气相沉积方法在铜箔基底上制备石墨烯薄膜；
(4)在两个金属电极(2)之间的衬底(1)的上表面、两个金属电极(2)的上表面和内侧壁上覆盖石墨烯薄膜；其中，石墨烯的转移方法为：将带有铜箔基底的石墨烯薄膜表面均匀涂覆一层聚甲基丙烯酸甲酯薄膜，然后放入刻蚀溶液中4h腐蚀去除铜箔，留下由聚甲基丙烯酸甲酯薄膜支撑的石墨烯薄膜；将聚甲基丙烯酸甲酯薄膜支撑的石墨烯薄膜用去离子水清洗后转移到两个金属电极(2)之间的衬底(1)的上表面、两个金属电极(2)的上表面和内侧壁上；最后用丙酮和异丙醇去除聚甲基丙烯酸甲酯；其中，所述刻蚀溶液由CuSO4、HCl和水组成，CuSO4：HCl：H2O＝10g:50ml:50ml；
(5)对步骤(4)中转移的石墨烯薄膜光刻出叉指电极图形，将光刻好的石墨烯薄膜放入反应离子刻蚀系统真空腔室，通入氧气对石墨烯薄膜进行刻蚀，获得石墨烯叉指电极(3)；
(6)氟化石墨烯(4)的制备和转移方法，具体方法如下：
(a)将带有铜箔基底的石墨烯薄膜进行氟化：将石墨烯薄膜放入反应离子刻蚀系统的真空腔室中，采用六氟化硫等离子体对石墨烯薄膜表面进行氟化，形成氟化石墨烯(4)；
(b)将步骤(a)中形成的氟化石墨烯(4)转移至两个金属电极(2)之间的衬底(1)和叉指电极(3)的上表面；其中，氟化石墨烯薄膜(4)的转移方法与步骤(4)中石墨烯的转移方法相同；
(7)当采用柔性的衬底(1)时，揭下制备有氟化石墨烯为吸收层的紫外雪崩光电探测器的PDMS或者PI。
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101771092A (zh) * | 2009-12-16 | 2010-07-07 | 清华大学 | 一种基于石墨烯/硅肖特基结的光伏电池及其制备方法 |
| CN101859858A (zh) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于石墨烯的透明导电电极及其制法与应用 |
| CN102881759A (zh) * | 2012-10-24 | 2013-01-16 | 中国航天科技集团公司第五研究院第五一0研究所 | 氟化石墨烯在制备光电探测器件中的应用 |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101771092A (zh) * | 2009-12-16 | 2010-07-07 | 清华大学 | 一种基于石墨烯/硅肖特基结的光伏电池及其制备方法 |
| CN101859858A (zh) * | 2010-05-07 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于石墨烯的透明导电电极及其制法与应用 |
| CN102881759A (zh) * | 2012-10-24 | 2013-01-16 | 中国航天科技集团公司第五研究院第五一0研究所 | 氟化石墨烯在制备光电探测器件中的应用 |
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