CN106409667A - 一种图案化石墨烯电极的制备方法 - Google Patents
一种图案化石墨烯电极的制备方法 Download PDFInfo
- Publication number
- CN106409667A CN106409667A CN201610989404.7A CN201610989404A CN106409667A CN 106409667 A CN106409667 A CN 106409667A CN 201610989404 A CN201610989404 A CN 201610989404A CN 106409667 A CN106409667 A CN 106409667A
- Authority
- CN
- China
- Prior art keywords
- graphene
- film
- copper foil
- polymethyl methacrylate
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000059 patterning Methods 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 51
- 229910021389 graphene Inorganic materials 0.000 claims description 50
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000011889 copper foil Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 20
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 20
- 238000004528 spin coating Methods 0.000 claims description 15
- -1 graphite alkene Chemical class 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 150000001336 alkenes Chemical class 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 4
- 239000007772 electrode material Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 29
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Carbon And Carbon Compounds (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明公开了一种图案化石墨烯电极的制备方法。本发明制备得到的图案化石墨烯电极，其电学性能优于普通的金属电极，为有机薄膜晶体管的研究和应用提供了新的电极材料。同时，本发明制备得到的图案化石墨烯电极，作为柔性电极具备高透明度和良好的导电性能，用途广泛。
Description
技术领域
本发明涉及电极技术领域，尤其涉及一种图案化石墨烯电极的制备方法。
背景技术
化学气相沉积法(Chemical Vapor Deposnion，简称CVD)叫以用来制备大尺寸、高质量且性能良好的的层状石墨烯。这种方法是在约1000℃的高温条件下在过渡金属单晶、多晶或者非晶薄膜表面上，气态的碳氢化合物催化分解后产生的碳原子溶解到金属内；然后，在快速降温过程中由于低温碳在金属内溶解度较小而偏析到样品表面，从而形成石墨烯。CVD法制备的石墨烯可以较好的控制石墨烯薄膜的层数且可实现大范围生长，另外，单层石墨烯具有良好透过率和导电性，可应用于各种有机电子器件中，如透明导电膜、传感器和场效应晶体管，对于透明电子设备具有很大的意义。
图案化是有机中导体制造大型器件和复杂电路阵列的关键。用高分辨率的图案化方法来界定源极和漏极直接的分界线尤为重要，因为这个尺寸决定了电流的输出。聚合物薄膜图案化有很多应用，包括在半导体，光电，生物相关和医药领域，大量的方法已被用到研究聚合物图案化工艺中。有源层的图案化可减少相邻器件之间的串扰。
光刻技术(Lithography technology)是比较传统的图案化技术，具有所需的分辨牢，可大面积生产，一般适用于工业生产，比较适合集成电了器件的制造，例如电容器、晶体管和二极管。但是它们并不是非常适合于塑料电子学。
本发明尝试用光刻技术制备图案化的石墨烯，使其得到柔性的电极。
发明内容
本发明的目的在于提出一种图案化石墨烯电极的制备方法，其能够制备具备高透明度和良好的导电性能的柔性电极。
为达此目的，本发明采用以下技术方案：
一种图案化石墨烯电极的制备方法，包括：
(1)用化学气相沉积法在铜箔上沉积石墨烯；
(2)在所述沉积有石墨烯的铜箔上旋涂2-5wt％的聚甲基丙烯酸甲酯的氯苯溶液；
(3)待氯苯挥发后，将所述旋涂后的铜箔浸泡入过硫酸铵溶液中，蚀刻掉铜箔，得到石墨烯膜附着的聚甲基丙烯酸甲酯膜；
(4)将所述石墨烯膜附着的聚甲基丙烯酸甲酯膜转移到附有100-500nm厚SiO2的n型重掺杂硅片上，用丙酮清洗除去聚甲基丙烯酸甲酯膜，在硅片上得到石墨烯膜；
(5)将所述石墨烯膜旋涂光刻胶，UV光刻技术图案化光刻胶，用氧离子反应蚀刻去掉没有光刻胶覆盖的石墨烯，接着用丙酮除去光刻胶，得到图案化的石墨烯电极。
本发明对于现有技术的贡献，在于工艺过程的研究，对于具体的工艺条件，本领域技术人员完全可以根据现有技术的公开内容，以及具体的工艺要求来确定，本发明不再赘述。
本发明制备得到的图案化石墨烯电极，其电学性能优于普通的金属电极，为有机薄膜晶体管的研究和应用提供了新的电极材料。同时，本发明制备得到的图案化石墨烯电极，作为柔性电极具备高透明度和良好的导电性能，用途广泛。
具体实施方式
下面通过具体实施方式来进一步说明本发明的技术方案。
实施例1
一种图案化石墨烯电极的制备方法，包括：
(1)用化学气相沉积法在铜箔上沉积石墨烯；
(2)在所述沉积有石墨烯的铜箔上旋涂2wt％的聚甲基丙烯酸甲酯的氯苯溶液；
(3)待氯苯挥发后，将所述旋涂后的铜箔浸泡入过硫酸铵溶液中，蚀刻掉铜箔，得到石墨烯膜附着的聚甲基丙烯酸甲酯膜；
(4)将所述石墨烯膜附着的聚甲基丙烯酸甲酯膜转移到附有100nm厚SiO2的n型重掺杂硅片上，用丙酮清洗除去聚甲基丙烯酸甲酯膜，在硅片上得到石墨烯膜；
(5)将所述石墨烯膜旋涂光刻胶，UV光刻技术图案化光刻胶，用氧离子反应蚀刻去掉没有光刻胶覆盖的石墨烯，接着用丙酮除去光刻胶，得到图案化的石墨烯电极。
实施例2
一种图案化石墨烯电极的制备方法，包括：
(1)用化学气相沉积法在铜箔上沉积石墨烯；
(2)在所述沉积有石墨烯的铜箔上旋涂5wt％的聚甲基丙烯酸甲酯的氯苯溶液；
(3)待氯苯挥发后，将所述旋涂后的铜箔浸泡入过硫酸铵溶液中，蚀刻掉铜箔，得到石墨烯膜附着的聚甲基丙烯酸甲酯膜；
(4)将所述石墨烯膜附着的聚甲基丙烯酸甲酯膜转移到附有500nm厚SiO2的n型重掺杂硅片上，用丙酮清洗除去聚甲基丙烯酸甲酯膜，在硅片上得到石墨烯膜；
(5)将所述石墨烯膜旋涂光刻胶，UV光刻技术图案化光刻胶，用氧离子反应蚀刻去掉没有光刻胶覆盖的石墨烯，接着用丙酮除去光刻胶，得到图案化的石墨烯电极。
实施例3
一种图案化石墨烯电极的制备方法，包括：
(1)用化学气相沉积法在铜箔上沉积石墨烯；
(2)在所述沉积有石墨烯的铜箔上旋涂3wt％的聚甲基丙烯酸甲酯的氯苯溶液；
(3)待氯苯挥发后，将所述旋涂后的铜箔浸泡入过硫酸铵溶液中，蚀刻掉铜箔，得到石墨烯膜附着的聚甲基丙烯酸甲酯膜；
(4)将所述石墨烯膜附着的聚甲基丙烯酸甲酯膜转移到附有300nm厚SiO2的n型重掺杂硅片上，用丙酮清洗除去聚甲基丙烯酸甲酯膜，在硅片上得到石墨烯膜；
(5)将所述石墨烯膜旋涂光刻胶，UV光刻技术图案化光刻胶，用氧离子反应蚀刻去掉没有光刻胶覆盖的石墨烯，接着用丙酮除去光刻胶，得到图案化的石墨烯电极。
实施例1-3制备得到的图案化石墨烯电极，其电学性能优于普通的金属电极，为有机薄膜晶体管的研究和应用提供了新的电极材料。同时，本发明制备得到的图案化石墨烯电极，作为柔性电极具备高透明度和良好的导电性能，用途广泛。
Claims (1)
1.一种图案化石墨烯电极的制备方法，包括：
(1)用化学气相沉积法在铜箔上沉积石墨烯；
(2)在所述沉积有石墨烯的铜箔上旋涂2-5wt％的聚甲基丙烯酸甲酯的氯苯溶液；
(3)待氯苯挥发后，将所述旋涂后的铜箔浸泡入过硫酸铵溶液中，蚀刻掉铜箔，得到石墨烯膜附着的聚甲基丙烯酸甲酯膜；
(4)将所述石墨烯膜附着的聚甲基丙烯酸甲酯膜转移到附有100-500nm厚SiO2的n型重掺杂硅片上，用丙酮清洗除去聚甲基丙烯酸甲酯膜，在硅片上得到石墨烯膜；
(5)将所述石墨烯膜旋涂光刻胶，UV光刻技术图案化光刻胶，用氧离子反应蚀刻去掉没有光刻胶覆盖的石墨烯，接着用丙酮除去光刻胶，得到图案化的石墨烯电极。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610989404.7A CN106409667A (zh) | 2016-11-10 | 2016-11-10 | 一种图案化石墨烯电极的制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610989404.7A CN106409667A (zh) | 2016-11-10 | 2016-11-10 | 一种图案化石墨烯电极的制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106409667A true CN106409667A (zh) | 2017-02-15 |
Family
ID=59229758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610989404.7A Pending CN106409667A (zh) | 2016-11-10 | 2016-11-10 | 一种图案化石墨烯电极的制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106409667A (zh) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106842729A (zh) * | 2017-04-10 | 2017-06-13 | 深圳市华星光电技术有限公司 | 石墨烯电极制备方法及液晶显示面板 |
| CN107934951A (zh) * | 2018-01-02 | 2018-04-20 | 京东方科技集团股份有限公司 | 图案化石墨烯的制备方法 |
| CN108539059A (zh) * | 2018-06-14 | 2018-09-14 | 北京蜃景光电科技有限公司 | 一种用于新型oled材料的制备方法、制备系统和应用 |
| CN110165023A (zh) * | 2019-06-12 | 2019-08-23 | 中国科学院重庆绿色智能技术研究院 | 一种石墨烯硅复合光电探测器的制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442105A (zh) * | 2007-11-21 | 2009-05-27 | 中国科学院化学研究所 | 一种有机场效应晶体管及其专用源漏电极与制备方法 |
| CN103449418A (zh) * | 2013-08-19 | 2013-12-18 | 中国科学院化学研究所 | 一种原子级清洁转移石墨烯的方法 |
| CN104945014A (zh) * | 2014-03-26 | 2015-09-30 | 苏州汉纳材料科技有限公司 | 基于石墨烯的透明导电薄膜的图案化方法 |
| CN105589598A (zh) * | 2015-12-24 | 2016-05-18 | 无锡格菲电子薄膜科技有限公司 | 一种图案化石墨烯的制造方法 |
-
2016
- 2016-11-10 CN CN201610989404.7A patent/CN106409667A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442105A (zh) * | 2007-11-21 | 2009-05-27 | 中国科学院化学研究所 | 一种有机场效应晶体管及其专用源漏电极与制备方法 |
| CN103449418A (zh) * | 2013-08-19 | 2013-12-18 | 中国科学院化学研究所 | 一种原子级清洁转移石墨烯的方法 |
| CN104945014A (zh) * | 2014-03-26 | 2015-09-30 | 苏州汉纳材料科技有限公司 | 基于石墨烯的透明导电薄膜的图案化方法 |
| CN105589598A (zh) * | 2015-12-24 | 2016-05-18 | 无锡格菲电子薄膜科技有限公司 | 一种图案化石墨烯的制造方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106842729A (zh) * | 2017-04-10 | 2017-06-13 | 深圳市华星光电技术有限公司 | 石墨烯电极制备方法及液晶显示面板 |
| WO2018188115A1 (zh) * | 2017-04-10 | 2018-10-18 | 深圳市华星光电技术有限公司 | 石墨烯电极制备方法及液晶显示面板 |
| US10634962B2 (en) | 2017-04-10 | 2020-04-28 | Tcl China Star Optoelectronics Technology Co., Ltd. | Manufacturing method of graphene electrode and liquid crystal display panel for reducing difficulty of patterning graphene |
| CN107934951A (zh) * | 2018-01-02 | 2018-04-20 | 京东方科技集团股份有限公司 | 图案化石墨烯的制备方法 |
| CN108539059A (zh) * | 2018-06-14 | 2018-09-14 | 北京蜃景光电科技有限公司 | 一种用于新型oled材料的制备方法、制备系统和应用 |
| CN110165023A (zh) * | 2019-06-12 | 2019-08-23 | 中国科学院重庆绿色智能技术研究院 | 一种石墨烯硅复合光电探测器的制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lau et al. | Fully printed, high performance carbon nanotube thin-film transistors on flexible substrates | |
| Singh et al. | Molecular n-doping of chemical vapor deposition grown graphene | |
| Parvez et al. | Electrochemically exfoliated graphene as solution-processable, highly conductive electrodes for organic electronics | |
| CN106409667A (zh) | 一种图案化石墨烯电极的制备方法 | |
| Zhao et al. | Three-dimensional flexible complementary metal–oxide–semiconductor logic circuits based on two-layer stacks of single-walled carbon nanotube networks | |
| KR101375124B1 (ko) | 그래핀 투명 전극 및 이를 포함하는 플렉시블 실리콘 박막 반도체 소자 | |
| CN103236443B (zh) | 一种金属氧化物薄膜晶体管及其制备方法 | |
| KR101920718B1 (ko) | 그래핀 소자 제조 장치 및 이를 이용한 그래핀 소자 제조 방법 | |
| Park et al. | Effective atmospheric-pressure plasma treatment toward high-performance solution-processed oxide thin-film transistors | |
| CN107507828B (zh) | 具有电容器的集成电路及其制造方法 | |
| Sun et al. | All‐carbon thin‐film transistors as a step towards flexible and transparent electronics | |
| Xu et al. | Status and prospects of MXene-based nanoelectronic devices | |
| KR101174670B1 (ko) | 그래핀 기반 소자에 응용 할 수 있는 패턴된 그래핀의 제조방법 | |
| Ban et al. | Low-temperature postfunctionalization of highly conductive oxide thin-films toward solution-based large-scale electronics | |
| CN105493256B (zh) | 一种薄膜晶体管及其制备方法、显示装置 | |
| Deng et al. | Very facile fabrication of aligned organic nanowires based high-performance top-gate transistors on flexible, transparent substrate | |
| CN108666223A (zh) | 一种自对准底栅薄膜晶体管及其制备方法 | |
| Choi et al. | Monolithic metal oxide transistors | |
| CN106920803A (zh) | 有源层、包括其的薄膜晶体管阵列基板以及显示装置 | |
| US10418490B2 (en) | Field effect transistor and manufacturing method thereof | |
| CN107342228A (zh) | 一种场效应晶体管及其制备方法 | |
| CN105590932A (zh) | 一种基于柔性薄膜晶体管的cmos电路及其制作方法 | |
| CN107146773B (zh) | Tft基板的制作方法 | |
| CN105845721A (zh) | 一种顶栅结构及其制备方法、薄膜晶体管、阵列基板以及显示设备 | |
| Shin et al. | Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170215 |
|
| WD01 | Invention patent application deemed withdrawn after publication |