CN106409667A - 一种图案化石墨烯电极的制备方法 - Google Patents
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Abstract
本发明公开了一种图案化石墨烯电极的制备方法。本发明制备得到的图案化石墨烯电极，其电学性能优于普通的金属电极，为有机薄膜晶体管的研究和应用提供了新的电极材料。同时，本发明制备得到的图案化石墨烯电极，作为柔性电极具备高透明度和良好的导电性能，用途广泛。
Description
技术领域
本发明涉及电极技术领域，尤其涉及一种图案化石墨烯电极的制备方法。
背景技术
化学气相沉积法(Chemical Vapor Deposnion，简称CVD)叫以用来制备大尺寸、高质量且性能良好的的层状石墨烯。这种方法是在约1000℃的高温条件下在过渡金属单晶、多晶或者非晶薄膜表面上，气态的碳氢化合物催化分解后产生的碳原子溶解到金属内；然后，在快速降温过程中由于低温碳在金属内溶解度较小而偏析到样品表面，从而形成石墨烯。CVD法制备的石墨烯可以较好的控制石墨烯薄膜的层数且可实现大范围生长，另外，单层石墨烯具有良好透过率和导电性，可应用于各种有机电子器件中，如透明导电膜、传感器和场效应晶体管，对于透明电子设备具有很大的意义。
图案化是有机中导体制造大型器件和复杂电路阵列的关键。用高分辨率的图案化方法来界定源极和漏极直接的分界线尤为重要，因为这个尺寸决定了电流的输出。聚合物薄膜图案化有很多应用，包括在半导体，光电，生物相关和医药领域，大量的方法已被用到研究聚合物图案化工艺中。有源层的图案化可减少相邻器件之间的串扰。
光刻技术(Lithography technology)是比较传统的图案化技术，具有所需的分辨牢，可大面积生产，一般适用于工业生产，比较适合集成电了器件的制造，例如电容器、晶体管和二极管。但是它们并不是非常适合于塑料电子学。
本发明尝试用光刻技术制备图案化的石墨烯，使其得到柔性的电极。
发明内容
本发明的目的在于提出一种图案化石墨烯电极的制备方法，其能够制备具备高透明度和良好的导电性能的柔性电极。
为达此目的，本发明采用以下技术方案：
一种图案化石墨烯电极的制备方法，包括：
(1)用化学气相沉积法在铜箔上沉积石墨烯；
(2)在所述沉积有石墨烯的铜箔上旋涂2-5wt％的聚甲基丙烯酸甲酯的氯苯溶液；
(3)待氯苯挥发后，将所述旋涂后的铜箔浸泡入过硫酸铵溶液中，蚀刻掉铜箔，得到石墨烯膜附着的聚甲基丙烯酸甲酯膜；
(4)将所述石墨烯膜附着的聚甲基丙烯酸甲酯膜转移到附有100-500nm厚SiO2的n型重掺杂硅片上，用丙酮清洗除去聚甲基丙烯酸甲酯膜，在硅片上得到石墨烯膜；
(5)将所述石墨烯膜旋涂光刻胶，UV光刻技术图案化光刻胶，用氧离子反应蚀刻去掉没有光刻胶覆盖的石墨烯，接着用丙酮除去光刻胶，得到图案化的石墨烯电极。
本发明对于现有技术的贡献，在于工艺过程的研究，对于具体的工艺条件，本领域技术人员完全可以根据现有技术的公开内容，以及具体的工艺要求来确定，本发明不再赘述。
本发明制备得到的图案化石墨烯电极，其电学性能优于普通的金属电极，为有机薄膜晶体管的研究和应用提供了新的电极材料。同时，本发明制备得到的图案化石墨烯电极，作为柔性电极具备高透明度和良好的导电性能，用途广泛。
具体实施方式
下面通过具体实施方式来进一步说明本发明的技术方案。
实施例1
一种图案化石墨烯电极的制备方法，包括：
(1)用化学气相沉积法在铜箔上沉积石墨烯；
(2)在所述沉积有石墨烯的铜箔上旋涂2wt％的聚甲基丙烯酸甲酯的氯苯溶液；
(3)待氯苯挥发后，将所述旋涂后的铜箔浸泡入过硫酸铵溶液中，蚀刻掉铜箔，得到石墨烯膜附着的聚甲基丙烯酸甲酯膜；
(4)将所述石墨烯膜附着的聚甲基丙烯酸甲酯膜转移到附有100nm厚SiO2的n型重掺杂硅片上，用丙酮清洗除去聚甲基丙烯酸甲酯膜，在硅片上得到石墨烯膜；
(5)将所述石墨烯膜旋涂光刻胶，UV光刻技术图案化光刻胶，用氧离子反应蚀刻去掉没有光刻胶覆盖的石墨烯，接着用丙酮除去光刻胶，得到图案化的石墨烯电极。
实施例2
一种图案化石墨烯电极的制备方法，包括：
(1)用化学气相沉积法在铜箔上沉积石墨烯；
(2)在所述沉积有石墨烯的铜箔上旋涂5wt％的聚甲基丙烯酸甲酯的氯苯溶液；
(3)待氯苯挥发后，将所述旋涂后的铜箔浸泡入过硫酸铵溶液中，蚀刻掉铜箔，得到石墨烯膜附着的聚甲基丙烯酸甲酯膜；
(4)将所述石墨烯膜附着的聚甲基丙烯酸甲酯膜转移到附有500nm厚SiO2的n型重掺杂硅片上，用丙酮清洗除去聚甲基丙烯酸甲酯膜，在硅片上得到石墨烯膜；
(5)将所述石墨烯膜旋涂光刻胶，UV光刻技术图案化光刻胶，用氧离子反应蚀刻去掉没有光刻胶覆盖的石墨烯，接着用丙酮除去光刻胶，得到图案化的石墨烯电极。
实施例3
一种图案化石墨烯电极的制备方法，包括：
(1)用化学气相沉积法在铜箔上沉积石墨烯；
(2)在所述沉积有石墨烯的铜箔上旋涂3wt％的聚甲基丙烯酸甲酯的氯苯溶液；
(3)待氯苯挥发后，将所述旋涂后的铜箔浸泡入过硫酸铵溶液中，蚀刻掉铜箔，得到石墨烯膜附着的聚甲基丙烯酸甲酯膜；
(4)将所述石墨烯膜附着的聚甲基丙烯酸甲酯膜转移到附有300nm厚SiO2的n型重掺杂硅片上，用丙酮清洗除去聚甲基丙烯酸甲酯膜，在硅片上得到石墨烯膜；
(5)将所述石墨烯膜旋涂光刻胶，UV光刻技术图案化光刻胶，用氧离子反应蚀刻去掉没有光刻胶覆盖的石墨烯，接着用丙酮除去光刻胶，得到图案化的石墨烯电极。
实施例1-3制备得到的图案化石墨烯电极，其电学性能优于普通的金属电极，为有机薄膜晶体管的研究和应用提供了新的电极材料。同时，本发明制备得到的图案化石墨烯电极，作为柔性电极具备高透明度和良好的导电性能，用途广泛。
Claims (1)
1.一种图案化石墨烯电极的制备方法，包括：
(1)用化学气相沉积法在铜箔上沉积石墨烯；
(2)在所述沉积有石墨烯的铜箔上旋涂2-5wt％的聚甲基丙烯酸甲酯的氯苯溶液；
(3)待氯苯挥发后，将所述旋涂后的铜箔浸泡入过硫酸铵溶液中，蚀刻掉铜箔，得到石墨烯膜附着的聚甲基丙烯酸甲酯膜；
(4)将所述石墨烯膜附着的聚甲基丙烯酸甲酯膜转移到附有100-500nm厚SiO2的n型重掺杂硅片上，用丙酮清洗除去聚甲基丙烯酸甲酯膜，在硅片上得到石墨烯膜；
(5)将所述石墨烯膜旋涂光刻胶，UV光刻技术图案化光刻胶，用氧离子反应蚀刻去掉没有光刻胶覆盖的石墨烯，接着用丙酮除去光刻胶，得到图案化的石墨烯电极。
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106842729A (zh) * | 2017-04-10 | 2017-06-13 | 深圳市华星光电技术有限公司 | 石墨烯电极制备方法及液晶显示面板 |
| CN107934951A (zh) * | 2018-01-02 | 2018-04-20 | 京东方科技集团股份有限公司 | 图案化石墨烯的制备方法 |
| CN108539059A (zh) * | 2018-06-14 | 2018-09-14 | 北京蜃景光电科技有限公司 | 一种用于新型oled材料的制备方法、制备系统和应用 |
| CN110165023A (zh) * | 2019-06-12 | 2019-08-23 | 中国科学院重庆绿色智能技术研究院 | 一种石墨烯硅复合光电探测器的制备方法 |
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