CN106403851A - Method for detecting wafer back levelness before photoetching process exposure and device thereof - Google Patents
Method for detecting wafer back levelness before photoetching process exposure and device thereof Download PDFInfo
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- CN106403851A CN106403851A CN201610783914.9A CN201610783914A CN106403851A CN 106403851 A CN106403851 A CN 106403851A CN 201610783914 A CN201610783914 A CN 201610783914A CN 106403851 A CN106403851 A CN 106403851A
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- wafer
- levelness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/30—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a method for detecting semiconductor wafer back levelness and a device thereof. The method comprises the steps that the preset threshold of the change of the wafer back levelness is set; the change of the wafer back levelness is detected before performing semiconductor wafer exposure, and the change value of the wafer back levelness is obtained; the detected levelness change is compared with the preset threshold; and if the levelness change value is less than the preset threshold, the next processing step is performed on the semiconductor wafer, or performing of the next processing step on the semiconductor wafer is refused. Compared with the methods and the devices in the prior art, the subsequent processing step is performed on the wafer having great wafer back levelness so that waste of equipment resources and materials can be reduced. Besides, the cleaning process can be performed on the back of the wafer when the wafer back levelness is detected to be poor and then detection is performed again so that pollution of a wafer stage can be avoided and the yield rate of the photoetching process can be enhanced.
Description
Technical field
The present invention relates to IC manufacturing field, more particularly, to a kind of method of detection semiconductor wafer back levelness
And device.
Background technology
Photoetching process (photoetching) is by a series of production stages, in different devices and circuit surface
On set up the technical process of figure.The target that photoetching produces is the requirement according to circuit design, generates accurate in size characteristic pattern
Shape is it is ensured that correct and correct with associating of other parts (parts) in the position of crystal column surface.Photoetching process is semiconductor technology
During very important one procedure, the target of this technical process has two：
First, it is the figure set up as close possible to size required by design rule in crystal column surface；
Second, it is to be properly positioned figure in crystal column surface.That is, whole circuitous pattern must be properly positioned to
Crystal column surface, on circuitous pattern, the relative position between single each section also must be correct.Semiconductor device is final
Figure be layering in crystal column surface by particular order by multiple mask plates and set up.
Photoetching process is passed through to include gluing, the master operation such as exposed and developed.Exposure is by Exposing Lamp or other spoke
Source of penetrating as exposure light source photolithography glue-line, thus figure is transferred on photoresist coating.Development is not gather to after exposure
The photoresist closing carries out chemolysis, thus figure is transferred to photoresist.In exposure process, if wafer rear has projection
Or depression is abnormal, influence whether the formation of direct picture, as shown in Figure 1.
In the prior art, these problems can be able to detect that in inspecting after development, but if to all of crystalline substance
Circle is inspected one by one, then can have a strong impact on yield.If wafer rear has pollutant, this wafer is once loaded into wafer
Thing platform, pollutant can pollute wafer stage, and when other wafers are loaded into wafer stage again, this pollutant also may proceed to
The other wafer of pollution, the wafer number now affecting gets more and more.
Even and if, the wafer that can detect in exposure process of board have exception, but board can not be given reasonably
Solution, only exposes all of wafer successively, so current process not only affects the yields of photoetching process, but also meeting
Waste device resource and material.
Content of the invention
In order to overcome problem above, the present invention provides a kind of method of detection semiconductor wafer back levelness situation and dress
Put, improve the yields of photoetching process, reduce the waste of device resource and material.
For achieving the above object, technical scheme is as follows：
A kind of method of detection semiconductor wafer back levelness, comprises the steps：
Step S1：Set the predetermined threshold of wafer rear levelness change；
Step S2：Detect the change of described wafer rear levelness before semiconductor crystal wafer is exposed, and obtain wafer
Back side levelness changing value；
Step S3：The levelness being detected change is compared with predetermined threshold；If described levelness changing value is little
In predetermined threshold, execution step S4；No person, execution step S5；
Step S4：Semiconductor crystal wafer is carried out with the process of next processing step；
Step S5：Refusal carries out the process of next processing step to described semiconductor crystal wafer, and described semiconductor crystal wafer is entered
The row back side is cleaned again, continues executing with step S2.
Preferably it is assumed that the radius of described semiconductor crystal wafer is R, described detection before to the exposure of described semiconductor crystal wafer
The detection range of wafer rear levelness change is the circle scope with described semiconductor crystal wafer center, with R-5 millimeter as radius.
Preferably, described detection wafer rear levelness change is to be examined using optical pickocff or gas sensor
Survey, during described optical pickocff or described gas sensor are arranged on wafer transmitting path, each wafer transmit process
In, every wafer back side levelness is detected.
Preferably, described optical pickocff includes light generating unit and light-receiving sensing unit, and described light-receiving sensing is single
By receiving the irreflexive loss amount of light of described smooth generating unit, unit determines whether semiconductor wafer back levelness is abnormal；
Described gas sensor includes gas generating unit and gas receives sensing unit, receives sensing unit by described gas and receives
Whether the gas loss amount of described gas generating unit is abnormal to determine semiconductor wafer back levelness.
Preferably, described step S5 also includes the step reported to the police.
Preferably, the wrong sweep length of described optical pickocff or described gas sensor is more than or equal to semiconductor crystal wafer
Diameter, disposably all to scan wafer rear all sites.
For achieving the above object, the present invention also provides a kind of technical scheme as follows：
A kind of device of detection semiconductor wafer back levelness, including：
Wafer rear cleaning module, for cleaning described semiconductor wafer back；
Detection module, is connected with described wafer rear cleaning module and exposure machine, before exposing in semiconductor crystal wafer
Detect the change of described wafer rear levelness, and obtain wafer rear levelness changing value；
Control module, is connected with described wafer rear cleaning module and described detection module, for controlling described detection mould
The wafer rear levelness that block is detected and predetermined threshold values are compared, in the levelness change being detected beyond described predetermined
In the case of threshold value, trigger described wafer rear cleaning module and described wafer rear is cleaned again, after having cleaned, return to institute
State detection module to be detected again.
Preferably, the device of detection semiconductor wafer back levelness also includes the warning mould being connected with described control module
Block；The police that next processing step is processed is not carried out to described semiconductor crystal wafer for sending under the triggering of control module
Report；If the wafer rear levelness that i.e. described wafer rear cleaning module is detected after described wafer rear is cleaned again
Also it is above predetermined threshold values, described control module triggering alarm module sends alarm.
From technique scheme it can be seen that：
1. the invention provides the inspection method of photolithographic exposure machine wafer rear levelness, its utilize optical pickocff or
Gas sensor detects wafer rear levelness, and the levelness being detected is compared with predetermined threshold values；If described water
Pingdu change is less than predetermined threshold, then semiconductor crystal wafer is carried out with the process of next processing step；Otherwise refuse partly to lead to described
Body wafer carries out the process of next processing step, carries out Wafer Backside Cleaning to semiconductor crystal wafer.
2. the invention provides the inspection method of photolithographic exposure machine wafer rear levelness can also detect the wafer back of the body
When face levelness is out of condition, in time wafer rear is carried out, it is to avoid the wafer of wafer rear contaminants exposure machine
Object stage, thus decreasing the waste of device resource and material, and improves the yields of photoetching process.
Brief description
Fig. 1 is the abnormal schematic diagram having influence on exposure image of semiconductor wafer back levelness
Fig. 2 is semiconductor wafer back levelness detecting device schematic diagram in the embodiment of the present invention
Fig. 3 is semiconductor wafer back levelness detects schematic diagram in the embodiment of the present invention
Fig. 4 is the schematic flow sheet detecting semiconductor wafer back levelness method in the embodiment of the present invention
Specific embodiment
Embody feature of present invention to describe in detail in the explanation of back segment with the embodiment of advantage.It should be understood that the present invention
Can have various changes in different examples, it neither departs from the scope of the present invention, and therein illustrate and be shown in
Substantially regard purposes of discussion, and be not used to limit the present invention.
Below in conjunction with accompanying drawing, by the method for the detection semiconductor wafer back levelness to the present invention for the specific embodiment and
Device is described in further detail.
Refer to Fig. 2, Fig. 2 is semiconductor wafer back levelness detecting device schematic diagram in the embodiment of the present invention.As figure
Shown, this device include for clean described semiconductor wafer back wafer rear cleaning module, detection module, control module
And alarm module.
Detection module is connected with wafer rear cleaning module and exposure machine, brilliant for detecting before exposing in semiconductor crystal wafer
The change of circle back side levelness, and obtain wafer rear levelness changing value.
Control module is connected with wafer rear cleaning module and detection module, for the wafer controlling detection module to be detected
Back side levelness is compared with predetermined threshold values, in the case that the levelness change being detected is beyond predetermined threshold, triggering
Wafer rear cleaning module is cleaned to wafer rear again, returns to detection module and detected after having cleaned.
Alarm module is connected with control module, described semiconductor crystal wafer is not carried out for sending under the triggering of control module
The alarm that next processing step is processed, if that is, wafer rear cleaning module is detected after wafer rear is cleaned again
Wafer rear levelness be also above predetermined threshold values, control module triggering alarm module sends alarm.
In an embodiment of the present invention, detection wafer rear levelness implementation has two kinds, that is, detect wafer rear water
Pingdu change is detected using optical pickocff or gas sensor, refers to Fig. 3, and Fig. 3 is the embodiment of the present invention
Middle semiconductor wafer back levelness detects schematic diagram.
Embodiment 1 (adopting optical pickocff)：
As shown in figure 3, optical pickocff includes light generating unit and light-receiving sensing unit, by light-receiving sensing unit
Whether the irreflexive loss amount of light of receiving light generating unit is abnormal to determine semiconductor wafer back levelness.Optical pickocff
During being arranged on wafer transmitting path, in each wafer transmit process, every wafer back side levelness is detected.
Specifically, by, during wafer transmitting path, installing light generating unit and light-receiving sensing unit, light is from light
The light source of generating unit is launched, and is radiated at wafer rear, and light occurs reflection and diffuse-reflectance in wafer rear, by reflection side
To installing light-receiving sensing unit, the power of sensing reflected light, realize the inspection to wafer rear levelness.
Embodiment 2 (adopting gas sensor)：
As shown in figure 3, gas sensor includes gas generating unit and gas receives sensing unit, sense is received by gas
Answer the gas loss amount of unit reception gas generating unit whether abnormal to determine semiconductor wafer back levelness.Gas sensing
During device is arranged on wafer transmitting path, in each wafer transmit process, every wafer back side levelness is detected.
Specifically, sensing unit, gas are received by during wafer transmitting path, installing gas generating unit and gas
Curtain is injected in wafer rear from sending of gas generating unit, and reflects in wafer rear, by installing in reflection direction
Gas receives sensing unit, the change of detecting gas pressure after wafer rear transmitting, to characterize wafer rear level condition, that is,
Realize the inspection to wafer rear levelness.
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is described in detail.
Refer to Fig. 4, Fig. 4 is that the flow process detecting semiconductor wafer back levelness method in the embodiment of the present invention is illustrated
Figure, as illustrated, the forming step of the method can include：
Step S1：Set the predetermined threshold of wafer rear levelness change；It should be noted that this predetermined threshold amount and list
The determination of position, is to be determined according to the detection means being adopted and conventional empirical value.For example, if adopting gas sensor,
Then to be determined with pressure change amount unit；If adopting gas sensor, then to be determined with amount of light loss.
Step S2：Detect the change of wafer rear levelness before semiconductor crystal wafer is exposed, and obtain wafer rear
Levelness changing value.As it was previously stated, detection wafer rear levelness implementation has two kinds, that is, detection wafer rear levelness becomes
Change is detected using optical pickocff or gas sensor.It is preferred that the sweeping of optical pickocff or gas sensor
Retouch length and be more than or equal to semiconductor die diameter of a circle, disposably all to scan wafer rear all sites.
The levelness situation of wafer rear according to embodiments of the invention, before wafer is exposed, can be detected.
It is, for example possible to use optical sensing or gas sensor etc., entire scan is carried out to wafer rear, as shown in Figure 3.
Further, in actual process, above-mentioned when semiconductor wafer back all positions detection level degree changes, have
The position that cannot detect, for example, wafer rear robotic arm lifts wafer segment, and this robotic arm lifts wafer segment from wafer
The position that about 5 millimeters of outer ring.
In an embodiment of the present invention it is assumed that the radius of semiconductor crystal wafer is R, detected before semiconductor crystal wafer is exposed
The detection range of wafer rear levelness change is the circle scope with semiconductor crystal wafer center, with R-5 millimeter as radius.
Step S3：The levelness being detected change is compared with predetermined threshold；If levelness changing value is less than pre-
Determine threshold value, execution step S4；No person, execution step S5；
Step S4：Semiconductor crystal wafer is carried out with the process of next processing step；
Step S5：Refusal carries out the process of next processing step to semiconductor crystal wafer, carries out the back side to semiconductor crystal wafer clear
Wash, then execution step S2.
If that is, wafer rear has particulate matter phenomenon, show the changing of levelness of wafer rear, if
Levelness change is less than a default threshold values, then illustrate that the levelness of this wafer rear is good, at this point it is possible to expose to wafer
Light, but, if the levelness of wafer rear changes very greatly, i.e. levelness change meets or exceeds a default threshold values, then table
The levelness of bright wafer rear is bad, now, if being exposed technique, certainly will influence whether wafer frontside image, and, such as
Fruit wafer rear is the material that can pollute wafer stage, then will certainly pollute wafer stage, thus affecting more wafers.
In an embodiment of the present invention, if levelness wafer rear is detected is bad, can refuse to semiconductor die
Justify the process carrying out next processing step, and the back side is carried out to semiconductor crystal wafer and clean again, then, then detected.
Further, if the wafer that described wafer rear cleaning module is detected after wafer rear is cleaned again is carried on the back
Face levelness is also above predetermined threshold values, and control module triggering alarm module sends alarm, that is, sends no longer to semiconductor die
Circle carries out the alarm that next processing step is processed.
Compared with prior art, the method can carry out subsequent process steps by preferable wafer only to wafer rear levelness
Process, thus decreasing the waste of device resource and material, and also can detect wafer rear levelness good when,
Wafer rear being carried out with technique, then, is detected again, thus avoiding the pollution of wafer stage, also improving simultaneously
The yields of photoetching process.
Above is only embodiments of the invention, and embodiment simultaneously is not used to limit the scope of patent protection of the present invention, therefore
The equivalent structure change that the description of every utilization present invention and accompanying drawing content are made, should be included in the protection of the present invention in the same manner
In the range of.
Claims (8)
1. a kind of method of detection semiconductor wafer back levelness, comprises the steps：
Step S1：Set the predetermined threshold of wafer rear levelness change；
Step S2：Detect the change of described wafer rear levelness before semiconductor crystal wafer is exposed, and obtain wafer rear
Levelness changing value；
Step S3：The levelness being detected change is compared with predetermined threshold；If described levelness changing value is less than pre-
Determine threshold value, execution step S4；No person, execution step S5；
Step S4：Semiconductor crystal wafer is carried out with the process of next processing step；
Step S5：Refusal carries out the process of next processing step to described semiconductor crystal wafer, and described semiconductor crystal wafer is carried on the back
After face is cleaned again, continue executing with step S2.
2. the method for detection semiconductor wafer back levelness according to claim 1 is it is characterised in that assume described half
The radius of semiconductor wafer is R, the detection of described detection wafer rear levelness change before to the exposure of described semiconductor crystal wafer
Scope is the circle scope with described semiconductor crystal wafer center, with R-5 millimeter as radius.
3. the method for detection semiconductor wafer back levelness according to claim 1 is it is characterised in that described detection is brilliant
The levelness change of the circle back side is detected using optical pickocff or gas sensor；Described optical pickocff or described
During gas sensor is arranged on wafer transmitting path, in each wafer transmit process, to every wafer back side levelness
Detected.
4. the method for detection semiconductor wafer back levelness according to claim 3 is it is characterised in that described optics passes
Sensor includes light generating unit and light-receiving sensing unit, receives described smooth generating unit by described light-receiving sensing unit
Whether the irreflexive loss amount of light is abnormal to determine semiconductor wafer back levelness；Described gas sensor includes gas and occurs
Unit and gas receive sensing unit, receive, by described gas, the gas loss that sensing unit receives described gas generating unit
Whether amount is abnormal to determine semiconductor wafer back levelness.
5. the method for the detection semiconductor wafer back levelness according to claim 3 or 4 is it is characterised in that described light
Learn sensor or the sweep length of described gas sensor is more than or equal to semiconductor die diameter of a circle, disposably all to sweep
Retouch wafer rear all sites.
6. the method for detection semiconductor wafer back levelness according to claim 1 is it is characterised in that described step S5
Also include the step reported to the police.
7. a kind of device of detection semiconductor wafer back levelness, including：
Wafer rear cleaning module, for cleaning described semiconductor wafer back；
Detection module, is connected with described wafer rear cleaning module and exposure machine, for detecting before exposing in semiconductor crystal wafer
The change of described wafer rear levelness, and obtain wafer rear levelness changing value；
Control module, is connected with described wafer rear cleaning module and described detection module, for controlling described detection module institute
The wafer rear levelness of detection is compared with predetermined threshold values, exceeds described predetermined threshold in the levelness change being detected
In the case of, trigger described wafer rear cleaning module and described wafer rear is cleaned again, after having cleaned, return to described inspection
Survey module to be detected again.
8. the device of detection semiconductor wafer back levelness according to claim 7 is it is characterised in that also include and institute
State the alarm module that control module is connected；Described semiconductor crystal wafer is not carried out for sending under the triggering of described control module
The alarm that next processing step is processed.
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| CN201610783914.9A CN106403851A (en) | 2016-08-31 | 2016-08-31 | Method for detecting wafer back levelness before photoetching process exposure and device thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114415479A (en) * | 2022-02-14 | 2022-04-29 | 长江存储科技有限责任公司 | Method and apparatus for removing contaminants from a lithographic apparatus |
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Application publication date: 20170215 |