CN112462579A - Wafer surface LD type development linear photoresist defect monitoring method and monitoring system - Google Patents
Wafer surface LD type development linear photoresist defect monitoring method and monitoring system Download PDFInfo
- Publication number
- CN112462579A CN112462579A CN202011362231.9A CN202011362231A CN112462579A CN 112462579 A CN112462579 A CN 112462579A CN 202011362231 A CN202011362231 A CN 202011362231A CN 112462579 A CN112462579 A CN 112462579A
- Authority
- CN
- China
- Prior art keywords
- type
- optical detection
- automatic optical
- monitoring
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention discloses a wafer surface LD type development linear photoresist defect monitoring method, which comprises the following steps: periodically triggering automatic optical detection on the developing LD type nozzle; judging whether the LD type spray head is polluted or not through automatic optical detection, and if not, normally producing the machine; triggering the LD type spray head to clean if the pollution occurs; and after cleaning, carrying out automatic optical detection again, judging whether pollution occurs, if no pollution occurs, triggering the machine to produce, and otherwise, carrying out cleaning again until the automatic optical detection is pollution-free. The invention also discloses a wafer surface LD type development linear photoresist defect monitoring system. The invention improves the scheme of obtaining wafer linear photoresist defect residues by post monitoring and reverse derivation in the prior art into actively monitoring the LD type sprayer pollution in advance, can actively find the source of linear photoresist defect residues, and can clean in advance to avoid the linear photoresist defect residues to the maximum extent, thereby avoiding unnecessary waste and improving the yield.
Description
Technical Field
The invention relates to the field of semiconductor production and manufacturing, in particular to a wafer surface LD type development linear photoresist defect monitoring method in a semiconductor development process. The invention also relates to a wafer surface LD type development linear photoresist defect monitoring system in the semiconductor development process.
Background
The increase in memory density of memory devices is closely related to the progress of semiconductor manufacturing processes. As the aperture of a semiconductor manufacturing process becomes smaller, the memory density of a memory device becomes higher. In order to further increase the memory density, a memory device of a three-dimensional structure (i.e., a 3d memory device) has been developed. The 3d memory device includes a plurality of memory cells stacked in a vertical direction, can increase integration in multiples on a unit area of a wafer, and can reduce cost.
With the gradual development of the 3d process, the thickness of the photoresist needs to be increased in the step process to improve the step number which can be manufactured by a single etching process, thereby improving the process stability and reducing the process load and the process cost. As the photoresist thickness increases, the development requirements also increase. At present, the developing process is mainly performed by using an LD type developing nozzle through a forward scanning method. The LD type nozzle starts from one side of the wafer, scans from the other side at a constant speed, and continuously sprays liquid. An Iline machine is generally selected at a level with larger line width, an LD type spray head is selected when the line width is matched with a Track machine for developing, and the uniformity in the plane is adjusted simply and is easy to control. However, the photoresist used in the operation of the iline machine is relatively thick, the LD-type nozzle is relatively close to the wafer during the development process, and is easily contaminated, and linear photoresist defect residues are formed on the surface of the wafer during the development process, as shown in fig. 1, which affects the yield of the product. The existing LD type development defect monitoring is machine PDM monitoring, which is post-monitoring, that is, the residual of linear photoresist defects is deduced reversely by finding the defects of products. The existing monitoring method is not beneficial to production, and can cause a large amount of defective products in high-speed production.
Disclosure of Invention
In this summary, a series of simplified form concepts are introduced that are simplifications of the prior art in this field, which will be described in further detail in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention aims to provide a wafer surface LD type developing linear photoresist defect monitoring method which can carry out active monitoring on linear photoresist defect residues in advance.
Another technical problem to be solved by the present invention is to provide a wafer surface LD type developed linear photoresist defect monitoring system capable of performing active monitoring on linear photoresist defect residues in advance.
In order to solve the above technical problems, the method for monitoring the defects of the LD-type developed linear photoresist on the surface of the wafer according to the present invention comprises:
s1, triggering automatic optical detection to the developing LD type nozzle periodically; the detection period is selected according to actual production requirements;
s2, judging whether the LD type spray head is polluted or not through automatic optical detection, and if not, normally producing the machine;
s3, if the pollution happens, triggering the LD type spray head to clean;
and S4, performing automatic optical detection again after cleaning, judging whether pollution occurs, if no pollution occurs, triggering the machine to produce, otherwise, performing cleaning again until the automatic optical detection is pollution-free.
AOI (Automated Optical Inspection abbreviation) is called automatic Optical Inspection, and is an automatic Inspection based on the principle that when an apparatus for inspecting defects of production equipment is automatically inspected, a machine automatically scans through a camera, acquires images, inspects the defects through image processing, and displays/marks the defects through a display or an automatic mark for repair personnel to repair.
Optionally, the method for monitoring the defects of the wafer surface LD type developing linear photoresist is further improved, and if the contamination is still detected after more than three times of cleaning of the LD type spray head, an alarm is triggered and manual review is carried out.
If the LD type sprayer is still detected to be polluted after more than three times of cleaning, the pollution is probably not caused by the sprayer pollution and is probably caused by other reasons, so that the machine needs to be stopped for manual review, and the larger loss is avoided.
Optionally, the method for monitoring the LD-type developed linear photoresist defects on the wafer surface is further improved, and if the total time for executing the method for monitoring the LD-type developed linear photoresist defects on the wafer surface is longer than a preset threshold, an alarm is triggered and manual review is performed.
If the total time of the method for monitoring the LD type developed linear photoresist defects on the surface of the wafer is longer than a preset threshold (for example, the time for completely performing the pollution detection plus three times of cleaning), the monitoring of the invention still finds that the pollution starts the cleaning cycle to be performed, which indicates that the pollution may not be caused by the pollution of the spray head, and may be caused by other reasons, so that the machine needs to be stopped for manual review, and the larger loss is avoided.
Optionally, the method for monitoring the LD-type developed linear photoresist defects on the wafer surface is further improved, and is suitable for vacuum cavity wafer transfer structures of semiconductor production machines with processes of 130nm, 90nm, 65nm, 55nm, 45nm, 40nm, 32nm, 28nm, 65nm and less than 22 nm.
Optionally, the method for monitoring the LD type developed linear photoresist defects on the surface of the wafer is further improved, and is suitable for vacuum cavity wafer transmission structures of logic semiconductor devices, storage semiconductor devices, radio frequency semiconductor devices, analog semiconductor devices, MEMS, CIS, Flash and eFlash process semiconductor production machines.
In order to solve the above technical problems, the present invention provides a wafer surface LD type developed linear photoresist defect monitoring system, which is integrated in a semiconductor manufacturing machine, comprising:
an automatic optical inspection unit (AOI) disposed beside the LD type showerhead for inspecting whether contamination occurs in the LD type showerhead;
a detection control unit for controlling the automatic optical detection unit to periodically perform detection on the LD-type head, which decides whether to trigger the LD-type head cleaning according to the detection structure of the automatic optical detection unit;
the automatic optical detection unit is controlled again to detect after cleaning, whether pollution occurs is judged, if no pollution occurs, the machine platform is triggered to produce, and if no pollution occurs, the cleaning is executed again, and the automatic optical detection is pollution-free;
and an LD type head cleaning unit controlled by the detection control unit to perform cleaning on the LD type head.
Optionally, the system for monitoring the defects of the LD-type developed linear photoresist on the wafer surface is further improved, and if the automatic optical detection unit still detects contamination after the LD-type nozzle cleaning unit performs LD-type nozzle cleaning for more than three times, the detection control unit triggers an alarm to perform manual review.
Optionally, the wafer surface LD type developed linear photoresist defect monitoring system is further improved, and if the total time of single operation of the defect monitoring system is greater than a preset threshold, an alarm is triggered and manual review is performed.
Optionally, the system for monitoring the LD type developed linear photoresist defects on the wafer surface is further improved, and is suitable for vacuum cavity wafer transmission structures of semiconductor production machines with the processes of 130nm, 90nm, 65nm, 55nm, 45nm, 40nm, 32nm, 28nm, 65nm and below 22 nm.
Optionally, the wafer surface LD type developed linear photoresist defect monitoring system is further improved, and is suitable for a vacuum cavity wafer transfer structure of a logic semiconductor device, a storage semiconductor device, a radio frequency semiconductor device, a simulation semiconductor device, an MEMS, a CIS, a Flash, and an eFlash process semiconductor production machine.
The invention improves the scheme of obtaining wafer linear photoresist defect residues by backward derivation of after-monitoring in the prior art into actively monitoring the LD type spray head pollution in advance, can actively find the source of linear photoresist defect residues, and cleans in advance to avoid the linear photoresist defect residues to the maximum extent. The invention changes passive monitoring into active monitoring, can avoid linear photoresist defect residue from appearing after the linear photoresist defect residue wafer is formed, can actively reduce the residue rate while ensuring production, further avoid unnecessary waste and improve the yield.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention, are incorporated in and constitute a part of this specification. The drawings are not necessarily to scale, however, and may not be intended to accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the scope of values or properties encompassed by exemplary embodiments in accordance with the invention. The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a schematic diagram of a wafer showing linear photoresist defect residues.
Fig. 2 is a schematic flow chart of a monitoring method according to a first embodiment of the present invention.
Fig. 3 is a schematic flow chart of a monitoring method according to a second embodiment of the present invention.
Fig. 4 is a schematic flow chart of a monitoring method according to a third embodiment of the present invention.
Fig. 5 is a schematic diagram of the monitoring system of the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technical solutions of these exemplary embodiments to those skilled in the art.
It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. Like reference numerals refer to like elements throughout the drawings.
A first embodiment;
as shown in fig. 2, the present invention provides a method for monitoring defects of LD-type developed linear photoresist on a wafer surface, comprising:
s1, triggering automatic optical detection to the developing LD type nozzle periodically; the detection period is selected according to actual production requirements;
s2, judging whether the LD type spray head is polluted or not through automatic optical detection, and if not, normally producing the machine;
s3, if the pollution happens, triggering the LD type spray head to clean;
and S4, performing automatic optical detection again after cleaning, judging whether pollution occurs, if no pollution occurs, triggering the machine to produce, otherwise, performing cleaning again until the automatic optical detection is pollution-free.
A second embodiment;
as shown in fig. 3, the present invention provides a method for monitoring defects of LD-type developed linear photoresist on a wafer surface, comprising:
s1, triggering automatic optical detection to the developing LD type nozzle periodically; the detection period is selected according to actual production requirements;
s2, judging whether the LD type spray head is polluted or not through automatic optical detection, and if not, normally producing the machine;
s3, if the pollution happens, triggering the LD type spray head to clean;
if the LD type sprayer is still detected to be polluted after more than three times of cleaning, triggering an alarm and manually rechecking, otherwise, executing the step S4;
and S4, performing automatic optical detection again after cleaning, judging whether pollution occurs, if no pollution occurs, triggering the machine to produce, otherwise, performing cleaning again until the automatic optical detection is pollution-free.
A third embodiment;
as shown in fig. 4, the present invention provides a method for monitoring defects of LD-type developed linear photoresist on a wafer surface, comprising:
s1, triggering automatic optical detection to the developing LD type nozzle periodically; the detection period is selected according to actual production requirements;
s2, judging whether the LD type spray head is polluted or not through automatic optical detection, and if not, normally producing the machine;
s3, if the pollution happens, triggering the LD type spray head to clean;
if the total time for executing the method for monitoring the defects of the LD type developed linear photoresist on the surface of the wafer is longer than a preset threshold value, triggering an alarm and manually rechecking;
and S4, performing automatic optical detection again after cleaning, judging whether pollution occurs, if no pollution occurs, triggering the machine to produce, otherwise, performing cleaning again until the automatic optical detection is pollution-free.
The method for monitoring LD-type developed linear photoresist defects on a wafer surface according to any one of the first to third embodiments is applicable to vacuum chamber wafer transfer structures of semiconductor manufacturing machines with processes of 130nm, 90nm, 65nm, 55nm, 45nm, 40nm, 32nm, 28nm, 65nm, and 22nm or less.
The method for monitoring the LD-type developed linear photoresist defects on the surface of a wafer according to any one of the first to third embodiments is applicable to a vacuum cavity wafer transfer structure of a semiconductor manufacturing machine for logic semiconductor devices, memory semiconductor devices, radio frequency semiconductor devices, analog semiconductor devices, MEMS, CIS, Flash, and eFlash processes.
A fourth embodiment;
as shown in fig. 5, the present invention provides a wafer surface LD type developed linear photoresist defect monitoring system integrated in a semiconductor manufacturing machine, comprising:
an automatic optical detection unit disposed beside the LD type showerhead for detecting whether contamination occurs in the LD type showerhead; the method can select the method for shooting pictures or the optical detection of laser and infrared lamps;
a detection control unit for controlling the automatic optical detection unit to periodically perform detection on the LD-type head, which decides whether to trigger the LD-type head cleaning according to the detection structure of the automatic optical detection unit; the detection period is selected according to actual production requirements;
the automatic optical detection unit is controlled again to detect after cleaning, whether pollution occurs is judged, if no pollution occurs, the machine platform is triggered to produce, and if no pollution occurs, the cleaning is executed again, and the automatic optical detection is pollution-free;
and an LD type head cleaning unit controlled by the detection control unit to perform cleaning on the LD type head.
A fifth embodiment;
the invention provides a wafer surface LD type developing linear photoresistance defect monitoring system, which is integrated on a semiconductor production machine platform and comprises:
an automatic optical detection unit disposed beside the LD type showerhead for detecting whether contamination occurs in the LD type showerhead; the method can select the method for shooting pictures or the optical detection of laser and infrared lamps;
a detection control unit for controlling the automatic optical detection unit to periodically perform detection on the LD-type head, which decides whether to trigger the LD-type head cleaning according to the detection structure of the automatic optical detection unit; the detection period is selected according to actual production requirements;
the automatic optical detection unit is controlled again to detect after cleaning, whether pollution occurs is judged, if no pollution occurs, the machine platform is triggered to produce, and if no pollution occurs, the cleaning is executed again, and the automatic optical detection is pollution-free;
if the automatic optical detection unit still detects pollution after the LD type nozzle cleaning unit performs more than three times of LD type nozzle cleaning, the detection control unit triggers an alarm to perform manual review;
and an LD type head cleaning unit controlled by the detection control unit to perform cleaning on the LD type head.
A sixth embodiment;
the invention provides a wafer surface LD type developing linear photoresistance defect monitoring system, which is integrated on a semiconductor production machine platform and comprises:
an automatic optical detection unit disposed beside the LD type showerhead for detecting whether contamination occurs in the LD type showerhead; the method can select the method for shooting pictures or the optical detection of laser and infrared lamps;
a detection control unit for controlling the automatic optical detection unit to periodically perform detection on the LD-type head, which decides whether to trigger the LD-type head cleaning according to the detection structure of the automatic optical detection unit; the detection period is selected according to actual production requirements;
the automatic optical detection unit is controlled again to detect after cleaning, whether pollution occurs is judged, if no pollution occurs, the machine platform is triggered to produce, and if no pollution occurs, the cleaning is executed again, and the automatic optical detection is pollution-free;
and if the total time of single operation of the defect monitoring system is greater than a preset threshold value, triggering an alarm and manually rechecking.
An LD type head cleaning unit controlled by the detection control unit to perform cleaning of the LD type head;
the system for monitoring LD-type developed linear photoresist defects on a wafer surface according to any one of the fourth to sixth embodiments is applicable to vacuum chamber wafer transfer structures of semiconductor manufacturing machines with processes of 130nm, 90nm, 65nm, 55nm, 45nm, 40nm, 32nm, 28nm, 65nm, and 22nm or less.
The system for monitoring LD-type developed linear photoresist defects on a wafer surface according to any one of the fourth to sixth embodiments described above is applicable to a vacuum cavity wafer transfer structure of a logic semiconductor device, a storage semiconductor device, a radio frequency semiconductor device, an analog semiconductor device, an MEMS, a CIS, a Flash, and an eFlash process semiconductor production machine.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (10)
1. A wafer surface LD type development linear photoresist defect monitoring method is characterized by comprising the following steps:
s1, triggering automatic optical detection to the developing LD type nozzle periodically;
s2, judging whether the LD type spray head is polluted or not through automatic optical detection, and if not, normally producing the machine;
s3, if the pollution happens, triggering the LD type spray head to clean;
and S4, performing automatic optical detection again after cleaning, judging whether pollution occurs, if no pollution occurs, triggering the machine to produce, otherwise, performing cleaning again until the automatic optical detection is pollution-free.
2. The method for monitoring the LD type developed linear photoresist defect on the surface of the wafer according to claim 1, wherein:
if the LD type sprayer is still detected to be polluted after more than three times of cleaning, the alarm is triggered and the manual review is carried out.
3. The method for monitoring the LD type developed linear photoresist defect on the surface of the wafer according to claim 1, wherein:
and if the total time for executing the method for monitoring the defects of the LD type developed linear photoresist on the surface of the wafer is longer than a preset threshold, triggering an alarm and manually rechecking.
4. The method for monitoring the defects of the LD type developed linear photoresist on the surface of the wafer according to any one of claims 1 to 3, wherein:
the vacuum cavity wafer transmission structure is suitable for vacuum cavity wafer transmission structures of semiconductor production machines with the processes of being more than 130nm, 90nm, 65nm, 55nm, 45nm, 40nm, 32nm, 28nm, 65nm and less than 22 nm.
5. The method for monitoring the defects of the LD type developed linear photoresist on the surface of the wafer according to any one of claims 1 to 3, wherein:
the vacuum cavity wafer transfer structure is suitable for vacuum cavity wafer transfer structures of logic semiconductor devices, storage semiconductor devices, radio frequency semiconductor devices, analog semiconductor devices, MEMS, CIS, Flash and eFlash process semiconductor production machines.
6. A wafer surface LD type development linear photoresist defect monitoring system is integrated on a semiconductor production machine platform, and is characterized by comprising:
an automatic optical detection unit disposed beside the LD type showerhead for detecting whether contamination occurs in the LD type showerhead;
a detection control unit for controlling the automatic optical detection unit to periodically perform detection on the LD-type head, which decides whether to trigger the LD-type head cleaning according to the detection structure of the automatic optical detection unit;
the automatic optical detection unit is controlled again to detect after cleaning, whether pollution occurs is judged, if no pollution occurs, the machine platform is triggered to produce, and if no pollution occurs, the cleaning is executed again, and the automatic optical detection is pollution-free;
and an LD type head cleaning unit controlled by the detection control unit to perform cleaning on the LD type head.
7. The wafer surface LD type developed line photoresist defect monitoring system of claim 6, wherein:
if the automatic optical detection unit still detects pollution after the LD type nozzle cleaning unit performs more than three times of LD type nozzle cleaning, the detection control unit triggers an alarm to perform manual review.
8. The wafer surface LD type developed line photoresist defect monitoring system of claim 6, wherein:
and if the total time of single operation of the defect monitoring system is greater than a preset threshold value, triggering an alarm and manually rechecking.
9. The system for monitoring the defects of LD-type developed linear photoresist on the surface of a wafer according to any one of claims 6-8, wherein:
the vacuum cavity wafer transmission structure is suitable for vacuum cavity wafer transmission structures of semiconductor production machines with the processes of being more than 130nm, 90nm, 65nm, 55nm, 45nm, 40nm, 32nm, 28nm, 65nm and less than 22 nm.
10. The system for monitoring the defects of LD-type developed linear photoresist on the surface of a wafer according to any one of claims 6-8, wherein:
the vacuum cavity wafer transfer structure is suitable for vacuum cavity wafer transfer structures of logic semiconductor devices, storage semiconductor devices, radio frequency semiconductor devices, analog semiconductor devices, MEMS, CIS, Flash and eFlash process semiconductor production machines.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011362231.9A CN112462579A (en) | 2020-11-27 | 2020-11-27 | Wafer surface LD type development linear photoresist defect monitoring method and monitoring system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011362231.9A CN112462579A (en) | 2020-11-27 | 2020-11-27 | Wafer surface LD type development linear photoresist defect monitoring method and monitoring system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112462579A true CN112462579A (en) | 2021-03-09 |
Family
ID=74809797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011362231.9A Pending CN112462579A (en) | 2020-11-27 | 2020-11-27 | Wafer surface LD type development linear photoresist defect monitoring method and monitoring system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112462579A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115072099A (en) * | 2021-03-12 | 2022-09-20 | 富联裕展科技(深圳)有限公司 | Production line for processing workpieces and workpiece processing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990023473U (en) * | 1997-12-06 | 1999-07-05 | 구본준 | Semiconductor Wafer Developer |
| KR20050122995A (en) * | 2004-06-26 | 2005-12-29 | 엘지.필립스 엘시디 주식회사 | An apparatus for coating photo resist having sensor for detecting a pollutant |
| CN102376543A (en) * | 2010-08-09 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Development method in semiconductor component manufacture process |
| CN105404101A (en) * | 2014-08-28 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | Developing-solution-nozzle checking template and method |
| CN111403310A (en) * | 2020-03-30 | 2020-07-10 | 上海华力集成电路制造有限公司 | Wafer defect monitoring method and monitoring system thereof |
-
2020
- 2020-11-27 CN CN202011362231.9A patent/CN112462579A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990023473U (en) * | 1997-12-06 | 1999-07-05 | 구본준 | Semiconductor Wafer Developer |
| KR20050122995A (en) * | 2004-06-26 | 2005-12-29 | 엘지.필립스 엘시디 주식회사 | An apparatus for coating photo resist having sensor for detecting a pollutant |
| CN102376543A (en) * | 2010-08-09 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Development method in semiconductor component manufacture process |
| CN105404101A (en) * | 2014-08-28 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | Developing-solution-nozzle checking template and method |
| CN111403310A (en) * | 2020-03-30 | 2020-07-10 | 上海华力集成电路制造有限公司 | Wafer defect monitoring method and monitoring system thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115072099A (en) * | 2021-03-12 | 2022-09-20 | 富联裕展科技(深圳)有限公司 | Production line for processing workpieces and workpiece processing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102562020B1 (en) | Substrate inspection method, substrate processing system, and computer storage medium | |
| KR101184090B1 (en) | Immersion exposure coat film forming apparatus and immersion exposure coat film forming method and storage medium | |
| KR102457407B1 (en) | Substrate processing apparatus, substrate processing method, and storage medium | |
| US11676844B2 (en) | Coating film forming apparatus and adjustment method therefor | |
| KR100823167B1 (en) | System and method for haze control in semiconductor processes | |
| KR20180015652A (en) | Method of inspecting substrate, computer storage medium and substrate inspecting apparatus | |
| CN1294410A (en) | Semiconductor mfg. appts. | |
| CN112462579A (en) | Wafer surface LD type development linear photoresist defect monitoring method and monitoring system | |
| JP2009181982A (en) | Liquid treatment equipment | |
| KR20170077051A (en) | Adjusting method for imprint apparatus, imprinting method, and article manufacturing method | |
| KR20140105374A (en) | Substrate processing apparatus, monitoring device of substrate processing apparatus, and monitoring method of substrate processing apparatus | |
| US20140152807A1 (en) | Substrate defect inspection method, substrate defect inspection apparatus and non-transitory computer-readable storage medium | |
| JP2001004347A (en) | Defect inspecting device | |
| US10489902B2 (en) | Inspection apparatus, semiconductor device manufacturing system including the same, and method of manufacturing a semiconductor device using the same | |
| TWI696499B (en) | Substrate processing device and parts inspection method of substrate processing device | |
| CN104319246A (en) | Detection method and system for surface of silicon slice in product manufacturing process | |
| US9342880B2 (en) | Defect analyzing apparatus, substrate processing system, defect analyzing method and computer-readable storage medium | |
| US20080126014A1 (en) | Statistical method and automated system for detection of particulate matter on wafer processing chucks | |
| US6724476B1 (en) | Low defect metrology approach on clean track using integrated metrology | |
| US20090254209A1 (en) | Path mapping method after optical defect detection | |
| US20090305153A1 (en) | Substrate processing method and mask manufacturing method | |
| US20060112978A1 (en) | Apparatus and method for wet-treating wafers | |
| CN110581082B (en) | Method for monitoring wafer defects by using defect detection machine | |
| CN104882393B (en) | The monitored off-line method of photoetching anti-reflecting layer | |
| CN102486987B (en) | Etching method and system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |