CN104319246A - Detection method and system for surface of silicon slice in product manufacturing process - Google Patents
Detection method and system for surface of silicon slice in product manufacturing process Download PDFInfo
- Publication number
- CN104319246A CN104319246A CN201410544833.4A CN201410544833A CN104319246A CN 104319246 A CN104319246 A CN 104319246A CN 201410544833 A CN201410544833 A CN 201410544833A CN 104319246 A CN104319246 A CN 104319246A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- type
- image
- determining
- determined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 345
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 345
- 239000010703 silicon Substances 0.000 title claims abstract description 345
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- 238000001514 detection method Methods 0.000 title claims abstract description 25
- 230000007547 defect Effects 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 59
- 238000012545 processing Methods 0.000 claims abstract description 40
- 239000010408 film Substances 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 26
- 230000002950 deficient Effects 0.000 claims description 24
- 239000002699 waste material Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 abstract description 25
- 235000012431 wafers Nutrition 0.000 description 242
- 238000010586 diagram Methods 0.000 description 10
- 238000004590 computer program Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
An embodiment of the invention discloses a detection method and a system for surface of silicon slice in product manufacturing process. The method comprises the steps as follows: obtaining the surface image used for manufacturing the product silicon slice; determining the surface type of silicon slice according to the surface image; if the surface type of silicon slice is no defect type, processing the silicon slice according to the nest process of the product manufacturing process; if the surface type of silicon slice is unrepairable defect type, discarding the silicon slice; if the surface type of silicon slice is repairable defect type, repairing the silicon slice. In the embodiment of the invention, not discarding the unqualified silicon slice rather than discarding the unrepairable silicon slice of the unqualified silicon slice, repairing the repairable silicon slice, the repaired silicon slice can also be processed by the nest manufacturing process for reducing the discarding rate of the product.
Description
Technical Field
The invention relates to the technical field of silicon wafer surface detection, in particular to a method and a system for detecting the surface of a silicon wafer in a product manufacturing process.
Background
In the manufacturing process of products such as solar cells, the surface detection of silicon wafers is an important part. Because the silicon wafer is very thin and brittle, edge chipping, corner chipping, cracking, etc. often occur during the production process. In the manufacturing process of the product, the defects of liquid residue, broken screen of the screen mesh, uneven film forming and the like often occur on the surface of the silicon wafer. The silicon wafers with the defects are all unqualified, and the qualification of the surfaces of the silicon wafers directly influences the manufacture of the subsequent processes in the product manufacturing process. Therefore, in order to prevent unqualified silicon wafers from entering the subsequent flow, surface detection of the silicon wafers is required. In the prior art, the detection method of the surface of the silicon wafer is to carry out the next procedure treatment in the product manufacturing process on the silicon wafer which is qualified; and (4) carrying out waste treatment on the silicon wafers which are detected to be unqualified. The method for detecting the surface of the silicon wafer has high rejection rate.
Disclosure of Invention
The embodiment of the invention aims to provide a method and a system for detecting the surface of a silicon wafer in the product manufacturing process, which are used for solving the problem of high silicon wafer abandon rate in the method for detecting the surface of the silicon wafer in the product manufacturing process.
The purpose of the embodiment of the invention is realized by the following technical scheme:
a method for detecting the surface of a silicon wafer in the product manufacturing process comprises the following steps:
acquiring a surface image of a silicon wafer for manufacturing a product;
determining the surface type of the silicon wafer according to the surface image;
if the surface type is defect-free, carrying out next procedure treatment on the silicon wafer in the product manufacturing process;
if the surface type is irreparable defect type, the silicon wafer is subjected to waste treatment;
and if the surface type is repairable defect, repairing the silicon wafer.
Preferably, acquiring a surface image of a silicon wafer used to fabricate a product comprises:
and acquiring a surface image of a silicon wafer for manufacturing a product by scanning.
Preferably, acquiring a surface image of a silicon wafer for manufacturing a product, and determining a surface type of the silicon wafer according to the surface image, comprises:
acquiring a surface image of one surface of the silicon wafer;
determining a surface type of the one surface from the surface image of the one surface;
if the surface type of the surface is an irreparable defect type, determining the surface type of the silicon wafer to be an irreparable type;
if the surface type of the one surface is repairable or non-defective, acquiring a surface image of the other surface of the silicon wafer;
determining a surface type of the other surface from the surface image of the other surface;
if the surface type of the other surface is an irreparable defect type, determining the surface type of the silicon wafer to be an irreparable type;
if the surface types of the two surfaces are both non-defective, determining that the surface type of the silicon wafer is non-defective;
and if the surface type of at least one surface is repairable defect, determining the surface type of the silicon wafer to be repairable.
Preferably, acquiring a surface image of one surface of the silicon wafer comprises:
acquiring a surface image of one surface of the silicon wafer by using a first image acquisition device;
acquiring a surface image of the other surface of the silicon wafer, comprising:
and acquiring a surface image of the other surface of the silicon wafer by using a second image acquisition device arranged opposite to the first image acquisition device.
Preferably, determining the surface type of the silicon wafer according to the surface image comprises:
if the surface of the silicon wafer is determined to be complete and no liquid residue exists according to the surface image, determining that the surface type of the silicon wafer is a defect-free type; if the surface of the silicon wafer is determined to be complete according to the surface image but liquid residue exists, determining that the surface type of the silicon wafer is repairable; if the surface of the silicon wafer is determined to be incomplete according to the surface image, determining that the surface type of the silicon wafer is an irreparable type; or,
if the surface of the silicon wafer is determined to be complete and the formed film is uniform and complete according to the surface image, determining that the surface type of the silicon wafer is defect-free; if the surface of the silicon wafer is determined to be complete according to the surface image, but a partial area of a thin film material is not formed with a film or the film is formed unevenly, determining that the surface type of the silicon wafer is repairable; if the surface of the silicon wafer is determined to be incomplete according to the surface image, determining that the surface type of the silicon wafer is an irreparable type; or,
if the surface of the silicon wafer is determined to be complete according to the surface image and the number of the silk screen broken points is less than N1 points, determining that the surface type of the silicon wafer is defect-free; if the surface of the silicon wafer is determined to be complete according to the surface image, the number of the broken points of the screen is between N1 and N2, and the surface type of the silicon wafer is determined to be repairable; and if the surface of the silicon chip is determined to be incomplete and/or the number of the screen break points is larger than N2 according to the surface image, determining that the surface type of the silicon chip is a non-repairable type, and N2 is larger than N1 and is an integer.
A detection system for the surface of a silicon wafer in the product manufacturing process comprises:
the image acquisition subsystem is used for acquiring a surface image of a silicon wafer for manufacturing a product;
the classification processing device is used for determining the surface type of the silicon wafer according to the surface image; if the surface type is defect-free, the silicon wafer is conveyed to a processing device of the next working procedure in the product manufacturing process; if the surface type is a non-repairable defect type, transferring the silicon wafer to a waste treatment device; if the surface type is repairable defect, transferring the silicon wafer to a repairing device.
Preferably, the image acquisition subsystem is specifically configured to:
and acquiring a surface image of a silicon wafer for manufacturing a product by scanning.
Preferably, the image acquisition subsystem is specifically configured to acquire a surface image of one surface of the silicon wafer;
the classification processing apparatus is specifically configured to: determining a surface type of the surface from the surface image of the surface; if the surface type of the surface is irreparable defect type, determining the surface type of the silicon chip to be irreparable type;
if the surface type of the surface is repairable defective or non-defective, the image acquisition subsystem is specifically configured to: acquiring a surface image of the other surface of the silicon wafer;
the classification processing apparatus is specifically configured to: determining a surface type of the further surface from the surface image of the further surface; if the surface type of the other surface is irreparable defect type, determining the surface type of the silicon wafer to be irreparable type; if the surface types of the two surfaces are both non-defective, determining that the surface type of the silicon wafer is non-defective; and if the surface type of at least one surface is repairable defect, determining the surface type of the silicon wafer to be repairable.
Preferably, the image acquisition subsystem comprises a first image acquisition device and a second image acquisition device:
the first image acquisition device is used for acquiring a surface image of one surface of the silicon wafer;
the second image acquisition device is arranged opposite to the first image acquisition device, and the second image acquisition device is used for acquiring a surface image of the other surface of the silicon wafer.
Preferably, when the surface type of the silicon wafer is determined according to the surface image, the classification processing device is specifically configured to:
if the surface of the silicon wafer is determined to be complete and no liquid residue exists according to the surface image, determining that the surface type of the silicon wafer is a defect-free type; if the surface of the silicon wafer is determined to be complete according to the surface image but liquid residue exists, determining that the surface type of the silicon wafer is repairable; if the surface of the silicon wafer is determined to be incomplete according to the surface image, determining that the surface type of the silicon wafer is an irreparable type; or,
if the surface of the silicon wafer is determined to be complete and the formed film is uniform and complete according to the surface image, determining that the surface type of the silicon wafer is defect-free; if the surface of the silicon wafer is determined to be complete according to the surface image, but a partial area of a thin film material is not formed with a film or the film is formed unevenly, determining that the surface type of the silicon wafer is repairable; if the surface of the silicon wafer is determined to be incomplete according to the surface image, determining that the surface type of the silicon wafer is an irreparable type; or,
if the surface of the silicon wafer is determined to be complete according to the surface image and the number of the silk screen broken points is less than N1 points, determining that the surface type of the silicon wafer is defect-free; if the surface of the silicon wafer is determined to be complete according to the surface image, the number of the broken points of the screen is between N1 and N2, and the surface type of the silicon wafer is determined to be repairable; and if the surface of the silicon chip is determined to be incomplete and/or the number of the screen break points is larger than N2 according to the surface image, determining that the surface type of the silicon chip is a non-repairable type, and N1 is larger than N2 and is an integer.
The embodiment of the invention has the following beneficial effects:
in the embodiment of the invention, the unqualified silicon wafers are not discarded, but the silicon wafers which are not repairable in the unqualified silicon wafers are discarded, the repairable silicon wafers are recovered, and the repaired silicon wafers can be further processed in the next working procedure of the product manufacturing process, so that the product discarding rate is reduced. Further, a surface image of the silicon wafer is obtained by scanning. The scanning process is in a closed environment, and the influence of environment stray light can be prevented, so that the influence of factors such as reflection and interference is eliminated during detection. And the surface of the silicon wafer can be detected at any process in the manufacturing process of the product. Furthermore, two opposite image acquisition devices are used for respectively acquiring images of two surfaces of the silicon wafer. The product does not need to be turned over, the fragment rate is reduced, and the rejection rate of the product is further reduced in the detection process.
Drawings
FIG. 1 is a flowchart of a method for detecting a surface of a silicon wafer during a manufacturing process of a product according to an embodiment of the present invention;
FIG. 2 is a flowchart of a method for obtaining a surface image of a silicon wafer and determining a surface type of the silicon wafer according to the surface image according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a system for detecting a surface of a silicon wafer based on scanning according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a system for detecting a surface of a silicon wafer during a product manufacturing process according to an embodiment of the present invention.
Detailed Description
The following describes a method and a system for detecting the surface of a silicon wafer in a product manufacturing process in more detail with reference to the accompanying drawings and embodiments.
The embodiment of the invention provides a method for detecting the surface of a silicon wafer in a product manufacturing process, which comprises the following specific steps as shown in figure 1:
step 110: a surface image of a silicon wafer used to fabricate a product is acquired.
The silicon wafer may be a silicon wafer for manufacturing a solar cell, a silicon wafer for manufacturing a semiconductor, a polycrystalline silicon wafer, or a monocrystalline silicon wafer.
Step 120: and determining the surface type of the silicon wafer according to the surface image.
Step 130: if the surface type is defect-free, the silicon wafer is subjected to the next process step of the product manufacturing process.
Step 140: if the surface type is irreparable defect type, the silicon chip is subjected to waste treatment;
step 150: if the surface type is repairable defect, the silicon wafer is repaired.
It should be noted that defect-free means that all target parameters of the wafer surface are met. The repairable defect means that the important target parameters on the surface of the silicon wafer reach the standard, but the secondary target parameters do not reach the standard. The irreparable defect means that the important target parameters of the silicon wafer surface do not reach the standard. The target parameters refer to parameters concerned by the process to be detected; the important target parameters refer to appearance parameters of the silicon wafer surface which play a role in the process of manufacturing the product, and the secondary target parameters refer to appearance parameters of the silicon wafer surface which do not play a role in the process of manufacturing the product. Taking the silicon wafer after the cleaning process as an example, after the cleaning process, it is necessary to detect the integrity of the surface of the silicon wafer and whether there is liquid residue (e.g., color spots formed by chemical residue, watermarks, etc.). If the surface of the silicon wafer has defects such as cracks, corner drops, edge breakage and the like, namely the surface of the silicon wafer is incomplete, the silicon wafer cannot be used for manufacturing products, and therefore the integrity of the surface of the silicon wafer is an important target parameter; if liquid remains on the surface of the silicon wafer, the silicon wafer can still be used for manufacturing products only by removing the remaining liquid, and therefore, the liquid remains are secondary target parameters. If the silicon wafer surface is detected to be complete and no liquid is left, the important target parameters and the secondary target parameters reach the standard, and the surface is defect-free. If the silicon wafer surface is detected to be complete but liquid remains, the important target parameters reach the standard, but the secondary target parameters do not reach the standard, and the surface has repairable defects. If the defects of cracks, corner drop, edge breakage and the like exist on the surface of the silicon wafer, the important target parameters do not reach the standard, and the surface has the defect of unrepairable defect.
In the embodiment of the invention, the unqualified silicon wafers are not discarded, but the silicon wafers which are not repairable in the unqualified silicon wafers are discarded, the repairable silicon wafers are recovered, and the repaired silicon wafers can be further processed in the next working procedure of the product manufacturing process, so that the product discarding rate is reduced.
In the step 110, there are various methods for acquiring the surface image of the silicon wafer, and preferably, the surface image of the silicon wafer is acquired by scanning. There are various devices for scanning, and preferably, a scanner is used to acquire an image of the surface of the silicon wafer.
In the embodiment, the surface image of the silicon wafer is obtained by scanning, and the scanning process is in a closed environment, so that the influence of environment stray light can be prevented, and the influence of factors such as reflection, interference and the like can be eliminated during detection. For example, when a liquid residue exists on the surface of a silicon wafer during detection after a cleaning process, when an image of the surface of the silicon wafer is acquired by using an image pickup device, factors such as reflection and interference affect the acquired image of the surface of the silicon wafer, so that the liquid residue cannot be detected; the scanning device is adopted to obtain the surface image of the silicon wafer, so that the influence of factors such as reflection, interference and the like is avoided, and the liquid residue can be detected. And the surface of the silicon wafer can be detected at any process in the manufacturing process of the product.
In the step 110, when the surface image of the silicon wafer for manufacturing the product is obtained, if the silicon wafer only needs to be subjected to single-side detection, the image of one surface of the silicon wafer is obtained; if the silicon wafer needs to be subjected to double-sided detection, the specific implementation steps of determining the surface type of the silicon wafer according to the surface image in the above steps 110 and 120 are shown in fig. 2, and the specific steps are as follows:
step 210: acquiring a surface image of one surface of the silicon wafer;
one surface in this step is either one of the two surfaces of the wafer, with no ordering requirement.
Step 220: the surface type of the surface is determined from the surface image of the surface.
Step 230: and if the surface type of the surface is an irreparable defect type, determining the surface type of the silicon wafer to be an irreparable type.
In the step, as long as the defect that one surface of the silicon wafer is irreparable is detected, the surface type of the silicon wafer can be determined to be irreparable, and a surface image of the other surface does not need to be acquired, so that the detection efficiency is improved.
Step 240: if the surface type of the surface is repairable defect or non-defect, a surface image of the other surface of the silicon wafer is acquired.
Step 250: the surface type of the further surface is determined from the surface image of the further surface.
Step 260: and if the surface type of the other surface is an irreparable defect type, determining the surface type of the silicon chip to be an irreparable type.
Step 270: and if the surface types of the two surfaces are both non-defective, determining that the surface type of the silicon wafer is non-defective.
Step 280: and if the surface type of at least one surface is repairable defect, determining the surface type of the silicon wafer to be repairable.
In the step 210, there are various methods for obtaining a surface image of one surface of the silicon wafer, and the embodiments of the present invention exemplify several of them:
one is to use one image acquisition device to acquire surface images of both surfaces.
In the method, after the surface image of one surface of the silicon wafer is obtained, the silicon wafer needs to be turned over, and then the surface image of the other surface is obtained by the same image acquisition device.
Secondly, acquiring a surface image of one surface of the silicon wafer by using a first image acquisition device; and acquiring a surface image of the other surface of the silicon wafer by using a second image acquisition device arranged opposite to the first image acquisition device.
The relative arrangement refers to that the first image acquisition device and the second image acquisition device are arranged oppositely on the side for image acquisition.
In the embodiment of the present invention, preferably, the surfaces of the first image capturing device and the second image capturing device for image capturing are parallel to the surface of the silicon wafer to be detected.
In the embodiment of the invention, the images of the two surfaces of the silicon wafer are respectively acquired by utilizing two opposite image acquisition devices. The product does not need to be turned over, the fragment rate is reduced, and the rejection rate of the product is further reduced in the detection process.
Taking the double-sided detection of the silicon wafer after the cleaning process as an example, the implementation manner of determining the surface type of the silicon wafer according to the surface image may be: and if the surface is determined to have defects such as cracks, corner drop, edge breakage and the like according to the surface image of one surface, determining the surface type of the silicon chip to be an irreparable type. If the surface is determined to be complete and no liquid remains according to the surface image of the surface, judging the surface type of the silicon wafer according to the surface image of the other surface: if the other surface is determined to be complete according to the other surface image but liquid residue exists, determining the surface type of the silicon wafer to be a repairable type; if it is determined from the other surface image that the other surface is complete and has no liquid residue, determining that the surface type of the silicon wafer is defect-free; and if the other surface is determined to have defects such as cracks, corner chipping, edge chipping and the like according to the other surface image, determining that the surface type of the silicon wafer is an irreparable type. If the surface is complete but liquid residue exists, judging the surface type of the silicon wafer according to the surface image of the other surface: if the other surface is determined to be complete according to the other surface image but liquid residue exists, determining the surface type of the silicon wafer to be a repairable type; if the other surface is determined to be complete and has no liquid residue according to the other surface, determining the surface type of the silicon wafer to be a repairable type; and if the other surface is determined to have defects such as cracks, corner chipping, edge chipping and the like according to the surface image, determining that the surface type of the silicon wafer is an irreparable type.
Taking the Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes as examples, the implementation manner of determining the surface type of the silicon wafer according to the surface image may be: and if the surface is determined to have defects such as cracks, corner drop, edge breakage and the like according to the surface image of one surface, determining the surface type of the silicon chip to be an irreparable type. If the surface is determined to be complete, the formed film is uniform and complete according to the surface image of the surface, judging the surface type of the silicon wafer according to the surface image of the other surface: if the other surface is determined to be complete according to the other surface image but the partial area of the thin film material is not formed with the film or the film is not uniformly formed with the film, determining the surface type of the silicon wafer to be a repairable type; if the other surface is determined to be complete and the film is formed uniformly and completely according to the other surface image, determining that the surface type of the silicon wafer is defect-free; and if the other surface is determined to have defects such as cracks, corner chipping, edge chipping and the like according to the other surface image, determining that the surface type of the silicon wafer is an irreparable type. If the surface is determined to be complete but the partial area of the thin film material has no film or is not uniform, judging the surface type of the silicon wafer according to the surface image of the other surface: if the other surface is determined to be complete according to the other surface image but the partial area of the thin film material is not formed with the film or the film is not uniformly formed with the film, determining the surface type of the silicon wafer to be a repairable type; if the other surface is determined to be complete and the formed film is uniform and complete according to the other surface image, determining that the surface type of the silicon wafer is repairable; and if the other surface is determined to have defects such as cracks, corner chipping, edge chipping and the like according to the other surface image, determining that the surface type of the silicon wafer is an irreparable type.
Taking the double-sided detection of the silicon wafer after the screen printing process as an example, the implementation manner of determining the surface type of the silicon wafer according to the surface image may be: classifying the surface of the silicon chip according to the number of the broken points of the silk screen, and determining the surface type of the silicon chip to be an irreparable type if the surface is determined to have the defects of cracks, corner drop, edge breakage, large-area grid breakage and the like according to the surface image of one surface of the silicon chip. If the surface is determined to be complete according to the surface image of the surface and the number of the silk screen broken points is less than N1 points, judging the surface type of the silicon wafer according to the surface image of the other surface: if the other surface is determined to be complete according to the other surface image, the number of the broken points of the silk screen is between N1 and N2, and the surface type of the silicon wafer is determined to be a repairable type; if the other surface is determined to be complete according to the other surface image and the number of the silk screen broken points is less than N1 points, determining that the surface type of the silicon wafer is defect-free; and if the other surface is determined to have defects such as cracks, corner drop, edge breakage, silk screen broken points larger than N2 and the like according to the other surface image, determining that the surface type of the silicon chip is the irreparable type. If the surface is determined to be complete according to the surface image of the surface, the number of the screen broken points is between N1 and N2, and the surface type of the silicon wafer is judged according to the surface image of the other surface: if the other surface is determined to be complete according to the other surface image, the number of the broken points of the silk screen is between N1 and N2, and the surface type of the silicon wafer is determined to be a repairable type; if the other surface is determined to be complete according to the other surface image and the number of the broken silk screen points is less than N1 points, determining that the surface type of the silicon wafer is repairable; and if the other surface is determined to have defects such as cracks, corner drop, edge breakage, silk screen broken points larger than N2 and the like according to the other surface image, determining that the surface type of the silicon chip is the irreparable type. Wherein N2 is greater than N1 and is an integer. The values of N1 and N2 are determined according to the requirement of the number of the screen breaks on the surface of the silicon wafer in the actual process, preferably, N1 is 5, and N2 is 20.
It should be noted that the surface type classification method can be applied to the above several process steps, but also can detect and classify the surface of the silicon wafer according to the requirements on the target parameters of the surface of the silicon wafer in other process steps.
It should be further noted that, in each of the above process links, if single-sided detection is performed, the implementation manner of the single-sided detection may refer to the implementation manner of the double-sided detection, and details are not described here.
As shown in fig. 3, it is a silicon wafer surface inspection system based on scanning. In combination with the system, taking the detection of the surface of the silicon wafer after the cleaning process as an example, the specific implementation manner of the surface detection is as follows:
the data processing system 301 controls the transfer device 302 to transfer the silicon wafer for manufacturing a product to the image pickup area of the first image pickup device 303. The first image acquisition device 303 scans a surface of a silicon wafer to obtain a surface image of the surface, and sends the surface image of the surface to the data processing system 301.
The data processing system 301 determines the surface type of the silicon wafer from the surface image of the surface.
If the surface type of the surface is a non-repairable defect, the data processing system 301 determines that the surface type of the silicon wafer is a non-repairable defect, the data processing system 301 controls the conveying device 302 to convey the silicon wafer to the grading system 304, and controls the grading system 304 to sort the silicon wafer into a waste treatment process.
There are various types of grading systems, and optionally, the grading system is composed of an intelligent manipulator controlled by a Programmable Logic Controller (PLC).
If the surface type of the surface is repairable defective or non-defective, the data processing system 301 controls the transfer device 302 to transfer the silicon wafer to the image capturing area of the second image capturing device 305. The second image capturing device 305 is disposed opposite the first image capturing device 303. The second image capturing device 305 scans the other surface of the silicon wafer to obtain a surface image of the other surface, and transmits the surface image of the other surface to the data processing system 301.
The data processing system 301 determines the surface type of the further surface from the surface image of the further surface.
If the surface type of the other surface is an irreparable defect type, the data processing system 301 determines that the surface type of the silicon wafer is an irreparable defect type, controls the conveying device 302 to convey the silicon wafer to the grading system 304, and controls the grading system 304 to sort the silicon wafer to a waste treatment process.
If the surface types of both surfaces are non-defective, the data processing system 301 determines that the surface type of the silicon wafer is non-defective, controls the transportation device 302 to transport the silicon wafer to the grading system 304, and controls the grading system 304 to sort the silicon wafer to the next process step of the product manufacturing process.
If the surface type of at least one surface is repairable defect, the data processing system 301 determines that the surface type of the silicon wafer is repairable defect, controls the transfer device 302 to transfer the silicon wafer to the grading system 304, and controls the grading system 304 to sort the silicon wafer to a processing device in the cleaning process.
It should be noted that the conveyor 302 may be controlled by the data processing system 301, or may not be controlled by the data processing system 301, but may be a conveyor belt moving at a constant speed. The first image capturing device 303 and the second image capturing device 305 mount a smart manipulator controlled by the data processing system 301. The data processing system 301 controls the intelligent manipulators on the first image acquisition device 303 and the second image acquisition device 305 to place the silicon wafer to be detected on the first image acquisition device 303 and the second image acquisition device 305, and controls the intelligent manipulators to place the silicon wafer on the conveyor belt after the image on the surface of the silicon wafer is acquired.
The embodiment of the invention provides a detection system for the surface of a silicon wafer in the product manufacturing process, as shown in fig. 4, comprising: an image acquisition subsystem 401 and a classification processing device 402.
And the image acquisition subsystem 401 is used for acquiring a surface image of a silicon wafer for manufacturing a product.
A classification processing device 402, configured to determine a surface type of the silicon wafer according to the surface image; if the surface type is defect-free, the silicon chip is conveyed to a processing device of the next working procedure in the product manufacturing process; if the surface type is a non-repairable defect, transferring the silicon wafer to a waste treatment device; if the surface type is repairable defect, the silicon wafer is transferred to a repair apparatus.
The repairing device is a processing device of a previous process in the manufacturing process of a product where the silicon chip is located.
Preferably, the image acquisition subsystem 401 is specifically configured to:
and acquiring a surface image of a silicon wafer for manufacturing a product by scanning.
Preferably, when the silicon wafer needs to be subjected to double-sided detection, the image acquisition subsystem 401 is specifically configured to acquire a surface image of one surface of the silicon wafer; the classification processing apparatus 402 is specifically configured to: determining a surface type of the surface from the surface image of the surface; if the surface type of the surface is irreparable defect type, determining the surface type of the silicon chip to be irreparable type; if the surface type of the surface is repairable defective or non-defective, the image acquisition subsystem 401 is specifically configured to: acquiring a surface image of the other surface of the silicon wafer; the classification processing apparatus 402 is specifically configured to: determining a surface type of the further surface from the surface image of the further surface; if the surface type of the other surface is an irreparable defect type, determining the surface type of the silicon wafer to be an irreparable type; if the surface types of the two surfaces are both non-defective, determining that the surface type of the silicon wafer is non-defective; and if the surface type of at least one surface is repairable defect, determining the surface type of the silicon wafer to be repairable.
Preferably, the image acquisition subsystem 401 comprises a first image acquisition device and a second image acquisition device:
the first image acquisition device is used for acquiring a surface image of one surface of the silicon wafer;
the second image acquisition device is arranged opposite to the first image acquisition device and is used for acquiring a surface image of the other surface of the silicon wafer.
In the above system, the image capturing subsystem 401 corresponds to the first image capturing device 303 and the second image capturing device 305 in the system shown in fig. 3. The classification processing means 402 corresponds to the data processing system 301, the transfer means 302 and the classification system 304 in the system shown in fig. 3.
Preferably, in the system described above, when determining the surface type of the silicon wafer according to the surface image, the classification processing device 402 is specifically configured to:
if the surface of the silicon wafer is determined to be complete and no liquid residue exists according to the surface image, determining that the surface type of the silicon wafer is a defect-free type; if the surface of the silicon wafer is determined to be complete according to the surface image but liquid residue exists, determining that the surface type of the silicon wafer is repairable; if the surface of the silicon wafer is determined to be incomplete according to the surface image, determining that the surface type of the silicon wafer is an irreparable type; or,
if the surface of the silicon wafer is determined to be complete and the formed film is uniform and complete according to the surface image, determining that the surface type of the silicon wafer is defect-free; if the surface of the silicon wafer is determined to be complete according to the surface image, but a partial area of a thin film material is not formed with a film or the film is formed unevenly, determining that the surface type of the silicon wafer is repairable; if the surface of the silicon wafer is determined to be incomplete according to the surface image, determining that the surface type of the silicon wafer is an irreparable type; or,
if the surface of the silicon wafer is determined to be complete according to the surface image and the number of the silk screen broken points is less than N1 points, determining that the surface type of the silicon wafer is defect-free; if the surface of the silicon wafer is determined to be complete according to the surface image, the number of the broken points of the screen is between N1 and N2, and the surface type of the silicon wafer is determined to be repairable; and if the surface of the silicon chip is determined to be incomplete and/or the number of the screen break points is larger than N2 according to the surface image, determining that the surface type of the silicon chip is a non-repairable type, and N2 is larger than N1 and is an integer.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A method for detecting the surface of a silicon wafer in the product manufacturing process is characterized by comprising the following steps:
acquiring a surface image of a silicon wafer for manufacturing a product;
determining the surface type of the silicon wafer according to the surface image;
if the surface type is defect-free, carrying out next procedure treatment on the silicon wafer in the product manufacturing process;
if the surface type is irreparable defect type, the silicon wafer is subjected to waste treatment;
and if the surface type is repairable defect, repairing the silicon wafer.
2. The method of claim 1, wherein acquiring a surface image of a silicon wafer used to fabricate a product comprises:
and acquiring a surface image of a silicon wafer for manufacturing a product by scanning.
3. The method of claim 1 or 2, wherein obtaining a surface image of a silicon wafer used to make a product, and determining a surface type of the silicon wafer from the surface image comprises:
acquiring a surface image of one surface of the silicon wafer;
determining a surface type of the one surface from the surface image of the one surface;
if the surface type of the surface is an irreparable defect type, determining the surface type of the silicon wafer to be an irreparable type;
if the surface type of the one surface is repairable or non-defective, acquiring a surface image of the other surface of the silicon wafer;
determining a surface type of the other surface from the surface image of the other surface;
if the surface type of the other surface is an irreparable defect type, determining the surface type of the silicon wafer to be an irreparable type;
if the surface types of the two surfaces are both non-defective, determining that the surface type of the silicon wafer is non-defective;
and if the surface type of at least one surface is repairable defect, determining the surface type of the silicon wafer to be repairable.
4. The method of claim 3, wherein obtaining a surface image of a surface of the silicon wafer comprises:
acquiring a surface image of one surface of the silicon wafer by using a first image acquisition device;
acquiring a surface image of the other surface of the silicon wafer, comprising:
and acquiring a surface image of the other surface of the silicon wafer by using a second image acquisition device arranged opposite to the first image acquisition device.
5. The method according to any one of claims 1 to 4, wherein determining the surface type of the silicon wafer from the surface image comprises:
if the surface of the silicon wafer is determined to be complete and no liquid residue exists according to the surface image, determining that the surface type of the silicon wafer is a defect-free type; if the surface of the silicon wafer is determined to be complete according to the surface image but liquid residue exists, determining that the surface type of the silicon wafer is repairable; if the surface of the silicon wafer is determined to be incomplete according to the surface image, determining that the surface type of the silicon wafer is an irreparable type; or,
if the surface of the silicon wafer is determined to be complete and the formed film is uniform and complete according to the surface image, determining that the surface type of the silicon wafer is defect-free; if the surface of the silicon wafer is determined to be complete according to the surface image, but a partial area of a thin film material is not formed with a film or the film is formed unevenly, determining that the surface type of the silicon wafer is repairable; if the surface of the silicon wafer is determined to be incomplete according to the surface image, determining that the surface type of the silicon wafer is an irreparable type; or,
if the surface of the silicon wafer is determined to be complete according to the surface image and the number of the silk screen broken points is less than N1 points, determining that the surface type of the silicon wafer is defect-free; if the surface of the silicon wafer is determined to be complete according to the surface image, the number of the broken points of the screen is between N1 and N2, and the surface type of the silicon wafer is determined to be repairable; and if the surface of the silicon chip is determined to be incomplete and/or the number of the screen break points is larger than N2 according to the surface image, determining that the surface type of the silicon chip is a non-repairable type, and N2 is larger than N1 and is an integer.
6. A detection system for the surface of a silicon wafer in the manufacturing process of a product is characterized by comprising:
the image acquisition subsystem is used for acquiring a surface image of a silicon wafer for manufacturing a product;
the classification processing device is used for determining the surface type of the silicon wafer according to the surface image; if the surface type is defect-free, the silicon wafer is conveyed to a processing device of the next working procedure in the product manufacturing process; if the surface type is a non-repairable defect type, transferring the silicon wafer to a waste treatment device; if the surface type is repairable defect, transferring the silicon wafer to a repairing device.
7. The system of claim 6, wherein the image acquisition subsystem is specifically configured to:
and acquiring a surface image of a silicon wafer for manufacturing a product by scanning.
8. The system according to claim 6 or 7, characterized in that:
the image acquisition subsystem is specifically used for acquiring a surface image of one surface of the silicon wafer;
the classification processing apparatus is specifically configured to: determining a surface type of the surface from the surface image of the surface; if the surface type of the surface is irreparable defect type, determining the surface type of the silicon chip to be irreparable type;
if the surface type of the surface is repairable defective or non-defective, the image acquisition subsystem is specifically configured to: acquiring a surface image of the other surface of the silicon wafer;
the classification processing apparatus is specifically configured to: determining a surface type of the further surface from the surface image of the further surface; if the surface type of the other surface is irreparable defect type, determining the surface type of the silicon wafer to be irreparable type; if the surface types of the two surfaces are both non-defective, determining that the surface type of the silicon wafer is non-defective; and if the surface type of at least one surface is repairable defect, determining the surface type of the silicon wafer to be repairable.
9. The system of claim 8, wherein the image acquisition subsystem comprises a first image acquisition device and a second image acquisition device:
the first image acquisition device is used for acquiring a surface image of one surface of the silicon wafer;
the second image acquisition device is arranged opposite to the first image acquisition device, and the second image acquisition device is used for acquiring a surface image of the other surface of the silicon wafer.
10. The system according to any one of claims 6 to 9, wherein when determining the surface type of the silicon wafer according to the surface image, the classification processing device is specifically configured to:
if the surface of the silicon wafer is determined to be complete and no liquid residue exists according to the surface image, determining that the surface type of the silicon wafer is a defect-free type; if the surface of the silicon wafer is determined to be complete according to the surface image but liquid residue exists, determining that the surface type of the silicon wafer is repairable; if the surface of the silicon wafer is determined to be incomplete according to the surface image, determining that the surface type of the silicon wafer is an irreparable type; or,
if the surface of the silicon wafer is determined to be complete and the formed film is uniform and complete according to the surface image, determining that the surface type of the silicon wafer is defect-free; if the surface of the silicon wafer is determined to be complete according to the surface image, but a partial area of a thin film material is not formed with a film or the film is formed unevenly, determining that the surface type of the silicon wafer is repairable; if the surface of the silicon wafer is determined to be incomplete according to the surface image, determining that the surface type of the silicon wafer is an irreparable type; or,
if the surface of the silicon wafer is determined to be complete according to the surface image and the number of the silk screen broken points is less than N1 points, determining that the surface type of the silicon wafer is defect-free; if the surface of the silicon wafer is determined to be complete according to the surface image, the number of the broken points of the screen is between N1 and N2, and the surface type of the silicon wafer is determined to be repairable; and if the surface of the silicon chip is determined to be incomplete and/or the number of the screen break points is larger than N2 according to the surface image, determining that the surface type of the silicon chip is a non-repairable type, and N1 is larger than N2 and is an integer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410544833.4A CN104319246A (en) | 2014-10-15 | 2014-10-15 | Detection method and system for surface of silicon slice in product manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410544833.4A CN104319246A (en) | 2014-10-15 | 2014-10-15 | Detection method and system for surface of silicon slice in product manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104319246A true CN104319246A (en) | 2015-01-28 |
Family
ID=52374458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410544833.4A Pending CN104319246A (en) | 2014-10-15 | 2014-10-15 | Detection method and system for surface of silicon slice in product manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104319246A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108818161A (en) * | 2018-07-24 | 2018-11-16 | 上海新昇半导体科技有限公司 | The rework system and method for silicon wafer |
| CN109870416A (en) * | 2019-01-22 | 2019-06-11 | 华灿光电（浙江）有限公司 | Graphite plate detection method and device |
| CN111489982A (en) * | 2020-04-10 | 2020-08-04 | 东莞市科隆威自动化设备有限公司 | High-speed solar silicon wafer double-side detection machine and double-side detection method thereof |
| CN111584385A (en) * | 2020-05-20 | 2020-08-25 | 西安奕斯伟硅片技术有限公司 | Silicon wafer defect recording method and device |
| CN113032416A (en) * | 2021-05-24 | 2021-06-25 | 晶芯成(北京)科技有限公司 | Wafer defect analysis method and system |
| CN114182236A (en) * | 2021-11-25 | 2022-03-15 | 晶澳太阳能有限公司 | Method for detecting abnormity of aluminum oxide coating equipment |
-
2014
- 2014-10-15 CN CN201410544833.4A patent/CN104319246A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108818161A (en) * | 2018-07-24 | 2018-11-16 | 上海新昇半导体科技有限公司 | The rework system and method for silicon wafer |
| CN109870416A (en) * | 2019-01-22 | 2019-06-11 | 华灿光电（浙江）有限公司 | Graphite plate detection method and device |
| CN111489982A (en) * | 2020-04-10 | 2020-08-04 | 东莞市科隆威自动化设备有限公司 | High-speed solar silicon wafer double-side detection machine and double-side detection method thereof |
| CN111584385A (en) * | 2020-05-20 | 2020-08-25 | 西安奕斯伟硅片技术有限公司 | Silicon wafer defect recording method and device |
| CN113032416A (en) * | 2021-05-24 | 2021-06-25 | 晶芯成(北京)科技有限公司 | Wafer defect analysis method and system |
| CN114182236A (en) * | 2021-11-25 | 2022-03-15 | 晶澳太阳能有限公司 | Method for detecting abnormity of aluminum oxide coating equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104319246A (en) | Detection method and system for surface of silicon slice in product manufacturing process | |
| TWI653450B (en) | Linear inspection system | |
| US9322786B2 (en) | Solar cell inspection apparatus and solar cell processing apparatus | |
| JP4575886B2 (en) | Crack inspection apparatus and crack inspection method for polycrystalline semiconductor wafer | |
| CN206854141U (en) | A kind of screen defect full-automatic vision detecting system | |
| JP4713278B2 (en) | Polycrystalline semiconductor wafer visual inspection method and visual inspection apparatus | |
| US9147241B2 (en) | Glass bottle inspection method and apparatus | |
| US20200072762A1 (en) | Method of inspecting back surface of epitaxial wafer, epitaxial wafer back surface inspection apparatus, method of managing lift pin of epitaxial growth apparatus, and method of producing epitaxial wafer | |
| KR20180015652A (en) | Method of inspecting substrate, computer storage medium and substrate inspecting apparatus | |
| KR20100084178A (en) | Method and apparatus for the production and control of plates or wafers for electronics | |
| KR102000907B1 (en) | Appearance vision inspection method for ferrite part | |
| JP5653370B2 (en) | Method for inspecting cracks in solar cells | |
| JP6561954B2 (en) | Manufacturing method of semiconductor wafer | |
| US9947596B2 (en) | Range-based real-time scanning electron microscope non-visual binner | |
| US9754365B2 (en) | Wafer inspection method and software | |
| JP2013036746A (en) | System for inspecting glass substrate, and method for manufacturing glass substrate | |
| JP2006300747A (en) | Inspection device | |
| KR101701487B1 (en) | Inline wafer process system and processing method the same | |
| CN106597709A (en) | Substrate detecting device and display panel processing system and method | |
| CN210180940U (en) | Automatic optical detection mechanism for detecting defects of silicon wafer | |
| JP2020139886A (en) | Substrate inspection device, substrate inspection method, and program | |
| CN104201093A (en) | Particle monitoring method of wet cleaning process apparatus | |
| JP2020139887A (en) | Manufacturing method for substrate | |
| TW201533824A (en) | Wafer inspection method and software |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150128 |
|
| RJ01 | Rejection of invention patent application after publication |