CN111403310A - Wafer defect monitoring method and monitoring system thereof - Google Patents
Wafer defect monitoring method and monitoring system thereof Download PDFInfo
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- CN111403310A CN111403310A CN202010233951.9A CN202010233951A CN111403310A CN 111403310 A CN111403310 A CN 111403310A CN 202010233951 A CN202010233951 A CN 202010233951A CN 111403310 A CN111403310 A CN 111403310A
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Abstract
The invention discloses a wafer defect monitoring method, which is used for wafer defect monitoring on an integrated circuit manufacturing production line and comprises the following steps: scanning the wafer through a defect scanner to obtain gray scale signals of a first minimum repeated complete unit and a second minimum repeated complete unit; gray scale signals of a preset position of a first minimum repeated complete unit in a first preset time period; comparing the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit to judge whether the wafer static defect exists; and comparing the gray scale signals of the preset position of the first minimum repeated complete unit at different moments in the first preset time period, and judging whether to trigger the early warning of the dynamic defect of the wafer at the preset position of the first minimum repeated complete unit. The invention also discloses a wafer defect monitoring method and a wafer defect monitoring system. The invention can judge and identify the static defect and the dynamic defect of the wafer and carry out early warning on the dynamic defect of the wafer, can prevent the scanning process from influencing the defect and improve the yield of products.
Description
Technical Field
The present invention relates to the field of integrated circuits, and more particularly, to a wafer defect monitoring method for wafer defect monitoring in an integrated circuit manufacturing line. The invention also provides a wafer defect monitoring system for monitoring the wafer defects on the integrated circuit manufacturing production line.
Background
With the rapid development of integrated circuit manufacturing technology, the feature size of the wafer is continuously reduced, resulting in more tiny defects. Defects on the wafer surface have become a major obstacle to yield. How to accurately and automatically detect defects of a wafer is a complicated and challenging task. Defect detection technology has become a key technology in the integrated circuit industry.
The method for monitoring the on-line defects in the manufacturing process of the integrated circuit mainly comprises the steps of scanning a wafer through a defect scanning machine to obtain the number and distribution of the defects on the wafer, and photographing the defects through a defect observation machine to obtain a defect picture. In general, the defect scanner will not affect the defects and the wafer itself, but in special cases, the defects with carbon element and loose structure may be broken and diffused by the scanner, which reduces the yield of the product. In this case, two defect scans are required to be detected, but in normal cases, the same process does not perform multiple scans, which results in missing on-line defect monitoring.
Disclosure of Invention
In this summary, a series of simplified form concepts are introduced that are simplifications of the prior art in this field, which will be described in further detail in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The wafer static defects in the application refer to defects which are caused by a production process, cannot change along with time and are fixedly formed on a wafer.
The dynamic wafer defect in the present application refers to a defect that is caused by scanning of a defect scanning machine and is dynamically formed on a wafer along with time variation.
The invention aims to provide a wafer defect monitoring method which is used for monitoring wafer defects on an integrated circuit manufacturing production line, can judge and identify static defects of wafers, can judge and identify dynamic defects of wafers and can perform early warning.
Another technical problem to be solved by the present invention is to provide a wafer defect monitoring system for wafer defect monitoring on an integrated circuit manufacturing line, which can determine and identify static defects of a wafer, determine and identify dynamic defects of the wafer, and perform early warning.
In order to solve the above technical problems, the present invention provides a wafer defect monitoring method for wafer defect monitoring on an integrated circuit manufacturing line, comprising the steps of:
s1, scanning the wafer through a defect scanning machine to obtain gray scale signals of the first minimum repeated complete unit and the second minimum repeated complete unit;
and a gray scale signal at a preset position of a first minimum repeating complete unit within a first preset time period;
optionally, the first minimal repeating complete unit may select a minimal repeating complete unit without wafer defects, such that the wafer defects of the second minimal repeating complete unit may be accurately identified;
optionally, the first preset time period is set according to the actual working beat of the defect scanning machine;
optionally, the preset position may be selected according to the actual production process of the wafer, for example, the position where the wafer defect frequently occurs is selected according to the production experience;
s2, comparing the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit to judge whether the wafer static defect exists;
meanwhile, gray scale signals of the preset position of the first minimum repeated complete unit at different moments in the first preset time period are compared, and whether wafer dynamic defect early warning of the preset position of the first minimum repeated complete unit is triggered or not is judged.
Optionally, the wafer defect monitoring method is further improved, and when step S2 is executed, if the gray-scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit are different, it is determined that at least one of the first minimum repeating complete unit and the second minimum repeating complete unit has a wafer static defect.
Under the condition that the first minimum repeated complete unit can select the minimum repeated complete unit without the wafer defects, whether the second minimum repeated complete unit has the wafer defects or not can be accurately determined;
correspondingly, the first minimum repeated complete unit has wafer defects, and the second minimum repeated complete unit has wafer defects at other positions on the premise of having wafer defects at the same positions;
of course, if the first minimal repeating complete unit and the second minimal repeating complete unit have defects at the same position, further determination may be made by other means, such as comparison with another minimal repeating complete unit, and determination of the minimal repeating complete unit having wafer defects may be made through multiple comparison runs.
Optionally, the wafer defect monitoring method is further improved, and when step S2 is implemented, if the gray-scale signal at the preset position of the first minimum repeating complete unit at different times in the first preset time period changes, the wafer dynamic defect warning at the preset position of the first minimum repeating complete unit is triggered.
Alternatively, the gray scale signal changes include, but are not limited to, the following types: a change in quantity, a change in morphology, or a change in color.
If it is known that a defect containing carbon elements and having a loose structure may be broken and diffused by a scanner, the wafer defect is a dynamic wafer defect, and a gray scale signal of a position where the dynamic wafer defect exists is changed, so as to identify the dynamic wafer defect and issue an early warning.
Optionally, the wafer defect monitoring method is further improved, and when step S2 is implemented, if the gray-scale signal at the preset position of the first minimum repeating complete unit at different times within the first preset time period changes, but the change of the gray-scale signal is smaller than the first gray-scale value change threshold, the defect scanning machine continues to perform scanning monitoring;
and if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is greater than or equal to a first gray scale value change threshold value, triggering early warning of the dynamic defect of the wafer at the preset position of the first minimum repeated complete unit.
Optionally, the wafer defect monitoring method is further improved, and when step S2 is implemented, if the gray-scale signal at the preset position of the first minimum repeating complete unit at different times within the first preset time period changes, but the change of the gray-scale signal is smaller than the first gray-scale value change threshold, the defect scanning machine continues to perform scanning monitoring;
if the gray scale signals at the preset positions of the first minimum repeated complete unit at different moments in the first preset time period change and the gray scale signal change is larger than or equal to the first gray scale value change threshold value, the laser light intensity of a defect scanning machine is reduced according to a preset proportion, and the defect scanning machine continues to scan the wafer for a second preset time period; the laser light intensity is reduced to reduce the generation of wafer dynamic defects.
If the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the second preset time period changes and the gray scale signal changes, but the gray scale signal change is smaller than a second gray scale value change threshold value, the defect scanning machine continues to perform scanning monitoring;
and if the gray scale signal change is larger than or equal to a second gray scale value change threshold, triggering the wafer dynamic defect early warning at the preset position of the first minimum repeated complete unit.
Alternatively, the first gray-scale value change threshold and the second gray-scale value change threshold may be the same or different, and the first preset time period and the second preset time period may be the same or different.
Optionally, the preset proportion range for reducing the laser light intensity of the defect scanner is 1-50%.
The invention provides a wafer defect monitoring system for wafer defect monitoring on an integrated circuit manufacturing production line, which can be integrated on a defect scanning machine, and the functions of comparison, judgment and the like can be realized by a computer programming technical means (such as a script), and the wafer defect monitoring system comprises:
the scanning module is used for scanning and acquiring gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit in a first preset time period;
the comparison module is used for comparing the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit;
and comparing the gray scale signals at the preset positions of the first minimum repeating complete unit at different moments in a first preset time period;
the judging module judges whether the wafer static defects exist according to the gray scale signal comparison result of the first minimum repeated complete unit and the second minimum repeated complete unit;
and comparing and judging whether to trigger the early warning of the dynamic defect of the wafer at the preset position of the first minimum repeated complete unit according to the gray scale signals at the preset position of the first minimum repeated complete unit at different moments in the first preset time period.
Optionally, the wafer defect monitoring system is further improved, and if the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit are different, the determining module determines that at least one of the first minimum repeating complete unit and the second minimum repeating complete unit has a wafer static defect.
Optionally, the wafer defect monitoring system is further improved, and if the gray scale signal of the preset position of the first minimum repeating complete unit at different moments in the first preset time period changes, the judgment module controls the defect scanning machine to trigger the early warning of the dynamic defect of the wafer at the preset position of the first minimum repeating complete unit.
Optionally, the wafer defect monitoring system is further improved, and if the gray scale signal at the preset position of the first minimum repeating complete unit at different moments in the first preset time period changes and the gray scale signal change is smaller than a first gray scale value change threshold, the judgment module controls the defect scanning machine to continue to perform scanning monitoring;
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is greater than or equal to the first gray scale value change threshold value, the judgment module controls the defect scanning machine to trigger the wafer dynamic defect early warning at the preset position of the first minimum repeated complete unit.
Optionally, the wafer defect monitoring system is further improved, and if the gray scale signal at the preset position of the first minimum repeating complete unit at different moments in the first preset time period changes and the gray scale signal change is smaller than a first gray scale value change threshold, the judgment module controls the defect scanning machine to continue to perform scanning monitoring;
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is greater than or equal to the first gray scale value change threshold value, the judging module controls the defect scanning machine to reduce the laser light intensity of the defect scanning machine according to a preset proportion, and then the defect scanning machine continues to scan the wafer for a second preset time period;
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the second preset time period changes and the gray scale signal changes, but the gray scale signal change is smaller than a second gray scale value change threshold value, the judging module controls the defect scanning machine to continuously execute scanning monitoring;
if the gray scale signal change is larger than or equal to the second gray scale value change threshold, the judgment module controls the defect scanning machine to trigger the wafer dynamic defect early warning at the preset position of the first minimum repeated complete unit.
The wafer defect monitoring method/system provided by the invention judges and identifies the static defect of the wafer by comparing the gray scale signals which are scanned and highlighted by different minimum repeated complete units, judges and identifies the dynamic defect of the wafer by comparing the change of the gray scale signals of the same gray scale minimum repeated complete unit in a certain period of time and sends out early warning. In a further improved scheme, the dynamic wafer defects generated by a defect scanning machine are avoided by reducing the laser light intensity. The invention can judge and identify the static defect and the dynamic defect of the wafer and carry out early warning on the dynamic defect of the wafer, can prevent the scanning process from influencing the defect and improve the yield of products.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention, are incorporated in and constitute a part of this specification. The drawings are not necessarily to scale, however, and may not be intended to accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the scope of values or properties encompassed by exemplary embodiments in accordance with the invention. The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a schematic diagram illustrating a wafer defect determination in the prior art.
FIG. 2 is a schematic diagram illustrating the determination of static defects of a wafer according to the present invention.
FIG. 3 is a schematic diagram illustrating dynamic defect determination of a wafer according to the present invention.
FIG. 4 is a control flow diagram for avoiding dynamic defects of a wafer according to the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technical solutions of these exemplary embodiments to those skilled in the art.
Further, it will be understood that, although the terms first, second, etc. may be used herein to describe various elements, parameters, components, regions, layers and/or sections, these elements, parameters, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, parameter, component, region, layer or section from another element, parameter, component, region, layer or section. Thus, a first element, parameter, component, region, layer or section discussed below could be termed a second element, parameter, component, region, layer or section without departing from the teachings of exemplary embodiments according to the present invention.
The invention provides a first implementation of a wafer defect monitoring method for wafer defect monitoring on an integrated circuit manufacturing production line, which comprises the following steps:
s1, scanning the wafer through a defect scanning machine to obtain gray scale signals of the first minimum repeated complete unit and the second minimum repeated complete unit; and a gray scale signal at a preset position of a first minimum repeating complete unit within a first preset time period;
optionally, the first minimal repeating complete unit may select a minimal repeating complete unit without wafer defects, such that the wafer defects of the second minimal repeating complete unit may be accurately identified;
optionally, the first preset time period is set according to the actual working beat of the defect scanning machine;
optionally, the preset position may be selected according to the actual production process of the wafer, for example, the position where the wafer defect frequently occurs is selected according to the production experience;
s2, comparing the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit to judge whether the wafer static defect exists;
meanwhile, gray scale signals of the preset position of the first minimum repeated complete unit at different moments in the first preset time period are compared, and whether wafer dynamic defect early warning of the preset position of the first minimum repeated complete unit is triggered or not is judged.
Optionally, the wafer defect monitoring method is further improved, and when step S2 is executed, if the gray-scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit are different, it is determined that at least one of the first minimum repeating complete unit and the second minimum repeating complete unit has a wafer static defect.
Under the condition that the first minimum repeated complete unit can select the minimum repeated complete unit without the wafer defects, whether the second minimum repeated complete unit has the wafer defects or not can be accurately determined;
correspondingly, the first minimum repeated complete unit has wafer defects, and the second minimum repeated complete unit has wafer defects at other positions on the premise of having wafer defects at the same positions;
of course, if the first minimal repeating complete unit and the second minimal repeating complete unit have defects at the same position, further determination may be made by other means, such as comparison with another minimal repeating complete unit, and determination of the minimal repeating complete unit having wafer defects may be made through multiple comparison runs.
Optionally, the wafer defect monitoring method is further improved, and when step S2 is implemented, if the gray-scale signal at the preset position of the first minimum repeating complete unit at different times in the first preset time period changes, the wafer dynamic defect warning at the preset position of the first minimum repeating complete unit is triggered.
Alternatively, the gray scale signal changes include, but are not limited to, the following types: a change in quantity, a change in morphology, or a change in color. If it is known that a defect containing carbon elements and having a loose structure may be broken and diffused by a scanner, the wafer defect is a dynamic wafer defect, and a gray scale signal of a position where the dynamic wafer defect exists is changed, so as to identify the dynamic wafer defect and issue an early warning.
The wafer defect monitoring method provided by the invention judges and identifies the static defect of the wafer by comparing the gray scale signals which are scanned and highlighted by different minimum repeated complete units, judges and identifies the dynamic defect of the wafer by comparing the change of the gray scale signals of the same gray scale minimum repeated complete unit in a certain period of time and sends out early warning. The invention can judge and identify the static defect and the dynamic defect of the wafer and carry out early warning on the dynamic defect of the wafer, can prevent the scanning process from influencing the defect and improve the yield of products.
The invention provides a second implementation of a wafer defect monitoring method for wafer defect monitoring on an integrated circuit manufacturing production line, comprising the following steps:
s1, scanning the wafer through a defect scanning machine to obtain gray scale signals of the first minimum repeated complete unit and the second minimum repeated complete unit;
optionally, the first minimal repeating complete unit may select a minimal repeating complete unit without wafer defects, such that the wafer defects of the second minimal repeating complete unit may be accurately identified;
and a gray scale signal at a preset position of a first minimum repeating complete unit within a first preset time period;
optionally, the first preset time period is set according to the actual working beat of the defect scanning machine;
optionally, the preset position may be selected according to the actual production process of the wafer, for example, the position where the wafer defect frequently occurs is selected according to the production experience;
s2, comparing the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit to judge whether the wafer static defect exists; if the gray scale signals at the preset positions of the first minimum repeated complete unit at different moments in the first preset time period change, but the gray scale signal change is smaller than a first gray scale value change threshold value, the defect scanning machine continues to perform scanning monitoring;
and if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is greater than or equal to a first gray scale value change threshold value, triggering early warning of the dynamic defect of the wafer at the preset position of the first minimum repeated complete unit.
And judging that at least one of the first minimum repeated complete unit and the second minimum repeated complete unit has wafer static defects if the gray scale signals of the first minimum repeated complete unit and the second minimum repeated complete unit are different. Under the condition that the first minimum repeated complete unit can select the minimum repeated complete unit without the wafer defects, whether the second minimum repeated complete unit has the wafer defects or not can be accurately determined; correspondingly, the first minimum repeated complete unit has wafer defects, and the second minimum repeated complete unit has wafer defects at other positions on the premise of having wafer defects at the same positions; of course, if the first minimal repeating complete unit and the second minimal repeating complete unit have defects at the same position, further determination may be made by other means, such as comparison with another minimal repeating complete unit, and determination of the minimal repeating complete unit having wafer defects may be made through multiple comparison runs.
Alternatively, the gray scale signal changes include, but are not limited to, the following types: a change in quantity, a change in morphology, or a change in color. If it is known that a defect containing carbon elements and having a loose structure may be broken and diffused by a scanner, the wafer defect is a dynamic wafer defect, and a gray scale signal of a position where the dynamic wafer defect exists is changed, so as to identify the dynamic wafer defect and issue an early warning.
The invention provides a third implementation of a wafer defect monitoring method for wafer defect monitoring on an integrated circuit manufacturing production line, which comprises the following steps:
s1, scanning the wafer through a defect scanning machine to obtain gray scale signals of the first minimum repeated complete unit and the second minimum repeated complete unit;
optionally, the first minimal repeating complete unit may select a minimal repeating complete unit without wafer defects, such that the wafer defects of the second minimal repeating complete unit may be accurately identified;
and a gray scale signal at a preset position of a first minimum repeating complete unit within a first preset time period;
optionally, the first preset time period is set according to the actual working beat of the defect scanning machine;
optionally, the preset position may be selected according to the actual production process of the wafer, for example, the position where the wafer defect frequently occurs is selected according to the production experience;
s2, if the gray scale signal at the preset position of the first minimum repeating complete unit at different moments in the first preset time period changes and the gray scale signal change is smaller than the first gray scale value change threshold, the defect scanning machine continues to perform scanning monitoring;
if the gray scale signals at the preset positions of the first minimum repeated complete unit at different moments in the first preset time period change and the gray scale signal change is larger than or equal to the first gray scale value change threshold value, the laser light intensity of a defect scanning machine is reduced according to a preset proportion, and the defect scanning machine continues to scan the wafer for a second preset time period; the laser light intensity is reduced to reduce the generation of wafer dynamic defects.
If the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the second preset time period changes and the gray scale signal changes, but the gray scale signal change is smaller than a second gray scale value change threshold value, the defect scanning machine continues to perform scanning monitoring;
and if the gray scale signal change is larger than or equal to a second gray scale value change threshold, triggering the wafer dynamic defect early warning at the preset position of the first minimum repeated complete unit.
And judging that at least one of the first minimum repeated complete unit and the second minimum repeated complete unit has wafer static defects if the gray scale signals of the first minimum repeated complete unit and the second minimum repeated complete unit are different. Under the condition that the first minimum repeated complete unit can select the minimum repeated complete unit without the wafer defects, whether the second minimum repeated complete unit has the wafer defects or not can be accurately determined; correspondingly, the first minimum repeated complete unit has wafer defects, and the second minimum repeated complete unit has wafer defects at other positions on the premise of having wafer defects at the same positions; of course, if the first minimal repeating complete unit and the second minimal repeating complete unit have defects at the same position, further determination may be made by other means, such as comparison with another minimal repeating complete unit, and determination of the minimal repeating complete unit having wafer defects may be made through multiple comparison runs.
Alternatively, the gray scale signal changes include, but are not limited to, the following types: a change in quantity, a change in morphology, or a change in color. If it is known that a defect containing carbon elements and having a loose structure may be broken and diffused by a scanner, the wafer defect is a dynamic wafer defect, and a gray scale signal of a position where the dynamic wafer defect exists is changed, so as to identify the dynamic wafer defect and issue an early warning.
Alternatively, the first gray-scale value change threshold and the second gray-scale value change threshold may be the same or different, and the first preset time period and the second preset time period may be the same or different.
Optionally, the preset proportion range for reducing the laser light intensity of the defect scanner is 1-50%.
The invention provides a wafer defect monitoring system for wafer defect monitoring on an integrated circuit manufacturing production line, which can be integrated on a defect scanning machine, and the functions of comparison, judgment and the like can be realized by a computer programming technical means (for example, a script), and the wafer defect monitoring system comprises:
the scanning module is used for scanning and acquiring gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit in a first preset time period;
the comparison module is used for comparing the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit;
and comparing the gray scale signals at the preset positions of the first minimum repeating complete unit at different moments in a first preset time period;
the judging module judges whether the wafer static defects exist according to the gray scale signal comparison result of the first minimum repeated complete unit and the second minimum repeated complete unit;
and comparing and judging whether to trigger the early warning of the dynamic defect of the wafer at the preset position of the first minimum repeated complete unit according to the gray scale signals at the preset position of the first minimum repeated complete unit at different moments in the first preset time period.
The invention provides a wafer defect monitoring system for wafer defect monitoring on an integrated circuit manufacturing production line, the wafer defect monitoring system can be integrated on a defect scanning machine, functions of comparison, judgment and the like can be realized by computer programming technical means (for example, scripts), and the wafer defect monitoring system comprises:
the scanning module is used for scanning and acquiring gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit in a first preset time period;
the comparison module is used for comparing the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit;
and comparing the gray scale signals at the preset positions of the first minimum repeating complete unit at different moments in a first preset time period;
and the judging module judges that at least one of the first minimum repeated complete unit and the second minimum repeated complete unit has wafer static defects if the gray scale signals of the first minimum repeated complete unit and the second minimum repeated complete unit are different.
If the gray scale signals at the preset positions of the first minimum repeating complete unit at different moments in the first preset time period change and the gray scale signal change is smaller than a first gray scale value change threshold value, the judging module controls the defect scanning machine to continuously perform scanning monitoring;
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is greater than or equal to the first gray scale value change threshold value, the judgment module controls the defect scanning machine to trigger the wafer dynamic defect early warning at the preset position of the first minimum repeated complete unit.
The invention provides a wafer defect monitoring system for wafer defect monitoring on an integrated circuit manufacturing production line, which can be integrated on a defect scanning machine, and the functions of comparison, judgment and the like can be realized by a computer programming technical means (for example, a script), and the wafer defect monitoring system comprises:
the scanning module is used for scanning and acquiring gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit in a first preset time period;
the comparison module is used for comparing the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit;
and comparing the gray scale signals at the preset positions of the first minimum repeating complete unit at different moments in a first preset time period;
and the judging module judges that at least one of the first minimum repeated complete unit and the second minimum repeated complete unit has wafer static defects if the gray scale signals of the first minimum repeated complete unit and the second minimum repeated complete unit are different.
If the gray scale signals at the preset positions of the first minimum repeating complete unit at different moments in the first preset time period change and the gray scale signal change is smaller than a first gray scale value change threshold value, the judging module controls the defect scanning machine to continuously perform scanning monitoring;
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is greater than or equal to the first gray scale value change threshold value, the judging module controls the defect scanning machine to reduce the laser light intensity of the defect scanning machine according to a preset proportion, and then the defect scanning machine continues to scan the wafer for a second preset time period;
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the second preset time period changes and the gray scale signal changes, but the gray scale signal change is smaller than a second gray scale value change threshold value, the judging module controls the defect scanning machine to continuously execute scanning monitoring;
if the gray scale signal change is larger than or equal to the second gray scale value change threshold, the judgment module controls the defect scanning machine to trigger the wafer dynamic defect early warning at the preset position of the first minimum repeated complete unit.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (10)
1. A wafer defect monitoring method is used for wafer defect monitoring on an integrated circuit manufacturing production line, and is characterized by comprising the following steps:
s1, scanning the wafer through a defect scanning machine to obtain gray scale signals of the first minimum repeated complete unit and the second minimum repeated complete unit;
and a gray scale signal at a preset position of a first minimum repeating complete unit within a first preset time period;
s2, comparing the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit to judge whether the wafer static defect exists;
meanwhile, gray scale signals of the preset position of the first minimum repeated complete unit at different moments in the first preset time period are compared, and whether wafer dynamic defect early warning of the preset position of the first minimum repeated complete unit is triggered or not is judged.
2. The wafer defect monitoring method of claim 1, wherein:
when step S2 is performed, if there is a difference between the gray level signals of the first minimum repeating complete unit and the second minimum repeating complete unit, it is determined that at least one of the first minimum repeating complete unit and the second minimum repeating complete unit has a wafer static defect.
3. The wafer defect monitoring method of claim 1, wherein:
when step S2 is executed, if the gray-scale signal at the preset position of the first minimum repeating complete unit at different times within the first preset time period changes, the wafer dynamic defect pre-warning at the preset position of the first minimum repeating complete unit is triggered.
4. The wafer defect monitoring method of claim 1, wherein:
when the step S2 is executed, if the gray scale signal at the preset position of the first minimum repeating complete unit at different times within the first preset time period changes, but the gray scale signal change is smaller than the first gray scale value change threshold, the defect scanning machine continues to perform scanning monitoring;
and if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is greater than or equal to a first gray scale value change threshold value, triggering early warning of the dynamic defect of the wafer at the preset position of the first minimum repeated complete unit.
5. The wafer defect monitoring method of claim 4, wherein: when the step S2 is executed, if the gray scale signal at the preset position of the first minimum repeating complete unit at different times within the first preset time period changes, but the gray scale signal change is smaller than the first gray scale value change threshold, the defect scanning machine continues to perform scanning monitoring;
if the gray scale signals at the preset positions of the first minimum repeated complete unit at different moments in the first preset time period change and the gray scale signal change is larger than or equal to the first gray scale value change threshold value, the laser light intensity of a defect scanning machine is reduced according to a preset proportion, and the defect scanning machine continues to scan the wafer for a second preset time period;
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the second preset time period changes and the gray scale signal changes, but the gray scale signal change is smaller than a second gray scale value change threshold value, the defect scanning machine continues to perform scanning monitoring;
and if the gray scale signal change is larger than or equal to a second gray scale value change threshold, triggering the wafer dynamic defect early warning at the preset position of the first minimum repeated complete unit.
6. A wafer defect monitoring system for a defect scanning machine of an integrated circuit manufacturing line, comprising:
the scanning module is used for scanning and acquiring gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit in a first preset time period;
the comparison module is used for comparing the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit;
and comparing the gray scale signals at the preset positions of the first minimum repeating complete unit at different moments in a first preset time period;
the judging module judges whether the wafer static defects exist according to the gray scale signal comparison result of the first minimum repeated complete unit and the second minimum repeated complete unit;
and comparing and judging whether to trigger the early warning of the dynamic defect of the wafer at the preset position of the first minimum repeated complete unit according to the gray scale signals at the preset position of the first minimum repeated complete unit at different moments in the first preset time period.
7. The wafer defect monitoring system of claim 6, wherein:
if the gray scale signals of the first minimum repeating complete unit and the second minimum repeating complete unit are different, the judging module judges that at least one of the first minimum repeating complete unit and the second minimum repeating complete unit has wafer static defects.
8. The wafer defect monitoring system of claim 6, wherein:
if the gray scale signal of the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes, the judgment module controls the defect scanning machine to trigger the early warning of the dynamic defect of the wafer at the preset position of the first minimum repeated complete unit.
9. The wafer defect monitoring system of claim 6, wherein:
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is smaller than a first gray scale value change threshold value, the judging module controls the defect scanning machine to continuously execute scanning monitoring;
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is greater than or equal to the first gray scale value change threshold value, the judgment module controls the defect scanning machine to trigger the wafer dynamic defect early warning at the preset position of the first minimum repeated complete unit.
10. The wafer defect monitoring system of claim 9, wherein:
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is smaller than a first gray scale value change threshold value, the judging module controls the defect scanning machine to continuously execute scanning monitoring;
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the first preset time period changes and the gray scale signal change is greater than or equal to the first gray scale value change threshold value, the judging module controls the defect scanning machine to reduce the laser light intensity of the defect scanning machine according to a preset proportion, and then the defect scanning machine continues to scan the wafer for a second preset time period;
if the gray scale signal at the preset position of the first minimum repeated complete unit at different moments in the second preset time period changes and the gray scale signal changes, but the gray scale signal change is smaller than a second gray scale value change threshold value, the judging module controls the defect scanning machine to continuously execute scanning monitoring;
if the gray scale signal change is larger than or equal to the second gray scale value change threshold, the judgment module controls the defect scanning machine to trigger the wafer dynamic defect early warning at the preset position of the first minimum repeated complete unit.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112462579A (en) * | 2020-11-27 | 2021-03-09 | 上海华力集成电路制造有限公司 | Wafer surface LD type development linear photoresist defect monitoring method and monitoring system |
| WO2022088660A1 (en) * | 2020-10-29 | 2022-05-05 | 长鑫存储技术有限公司 | Method and apparatus for improving wafer detection sensitivity, and storage medium |
| US11935244B2 (en) | 2020-10-29 | 2024-03-19 | Changxin Memory Technologies, Inc. | Method and apparatus for improving sensitivity of wafer detection, and storage medium |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040062432A1 (en) * | 2002-10-01 | 2004-04-01 | Akio Ishikawa | Image defect inspection method, image defect inspection apparatus and appearance inspection apparatus |
| US20040086168A1 (en) * | 2002-10-23 | 2004-05-06 | Masayuki Kuwabara | Pattern inspection method and inspection apparatus |
| US20040141640A1 (en) * | 2003-01-08 | 2004-07-22 | Byoung-Ho Lee | Method for apparatus for detecting defects on a wafer |
| TW201028680A (en) * | 2009-01-22 | 2010-08-01 | Au Optronics Corp | Optical inspection apparatus and optical inspection method |
| CN106229274A (en) * | 2016-09-27 | 2016-12-14 | 上海华力微电子有限公司 | A kind of method that detecting real-time photoresistance for defect checking machine platform damages |
| CN109143631A (en) * | 2018-09-30 | 2019-01-04 | 惠科股份有限公司 | repairing method and device |
| CN109585323A (en) * | 2018-11-27 | 2019-04-05 | 德淮半导体有限公司 | Test scan method |
-
2020
- 2020-03-30 CN CN202010233951.9A patent/CN111403310B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040062432A1 (en) * | 2002-10-01 | 2004-04-01 | Akio Ishikawa | Image defect inspection method, image defect inspection apparatus and appearance inspection apparatus |
| US20040086168A1 (en) * | 2002-10-23 | 2004-05-06 | Masayuki Kuwabara | Pattern inspection method and inspection apparatus |
| US20040141640A1 (en) * | 2003-01-08 | 2004-07-22 | Byoung-Ho Lee | Method for apparatus for detecting defects on a wafer |
| TW201028680A (en) * | 2009-01-22 | 2010-08-01 | Au Optronics Corp | Optical inspection apparatus and optical inspection method |
| CN106229274A (en) * | 2016-09-27 | 2016-12-14 | 上海华力微电子有限公司 | A kind of method that detecting real-time photoresistance for defect checking machine platform damages |
| CN109143631A (en) * | 2018-09-30 | 2019-01-04 | 惠科股份有限公司 | repairing method and device |
| CN109585323A (en) * | 2018-11-27 | 2019-04-05 | 德淮半导体有限公司 | Test scan method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022088660A1 (en) * | 2020-10-29 | 2022-05-05 | 长鑫存储技术有限公司 | Method and apparatus for improving wafer detection sensitivity, and storage medium |
| US11935244B2 (en) | 2020-10-29 | 2024-03-19 | Changxin Memory Technologies, Inc. | Method and apparatus for improving sensitivity of wafer detection, and storage medium |
| CN112462579A (en) * | 2020-11-27 | 2021-03-09 | 上海华力集成电路制造有限公司 | Wafer surface LD type development linear photoresist defect monitoring method and monitoring system |
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