CN106373850A - Plasma body processing device - Google Patents
Plasma body processing device Download PDFInfo
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- CN106373850A CN106373850A CN201610581053.6A CN201610581053A CN106373850A CN 106373850 A CN106373850 A CN 106373850A CN 201610581053 A CN201610581053 A CN 201610581053A CN 106373850 A CN106373850 A CN 106373850A
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- window
- lid
- insulating element
- processing apparatus
- plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
Abstract
The invention provides a plasma body processing device of a metal window having durance and light weight of the plasma body.The plasma processing device (2) which performs plasma processing on a processing substrate (G) inside a processing space (100) comprises a processing container (10) which is connected to the ground and made of metal, a loading table which is internally provided with the processed substrate (G); a metal window (3) which is arranged through a plurality of conductive portion windows (3) seal the processing container (10) and an opening on the upper surface side (11) to form a processing space (100); and an insulation member (31) which is made of resin is arranged between the adjacent portion windows; an insulation part cover (20) made of ceramic covers the the surface of the processing space side of the insulation member (31); and a plasma body antenna is arranged above the metal window (2) for performing plasma treatment on the processed gas by induction coupling.
Description
Technical field
The present invention relates to the use of plasmarized processing gas carry out processed substrate corona treatment grade from
Daughter processing meanss.
Background technology
In the manufacturing process of the flat faced display such as liquid crystal indicator (lcd) (fpd), exist and process space to being positioned in
The interior processing gas plasmarized as the glass substrate supply of processed substrate, are etched processing, become film process etc.
The operation of corona treatment.In these corona treatments, using plasma-etching apparatus, plasma cvd device etc.
Various plasma processing apparatus.In recent years, as by method plasmarized for processing gas, receive much concern is to have
It is obtained in that the inductively coupled plasma of the great advantages obtaining highdensity plasma under condition of high vacuum degree
(inductively coupled plasma:icp).
On the other hand, the size of glass substrate constantly maximizes.For example, in the rectangle glass of lcd it would be desirable to be able to
The length enough processing minor face × long side is about 2200mm × 2400mm, or even the plasma of the size of about 2800mm × about 3000mm
Body processing meanss.
With the maximization of such glass substrate, the maximization of plasma processing apparatus also constantly advances.However, it is sharp
With in the plasma processing apparatus of inductively coupled plasma, being arranged on the electricity being made up of quartz etc. of the top surface processing space
The rigidity of medium window is low, the maximization of hinder device.
Then, record in patent documentation 1 by metal window higher than quartz for rigidity is divided into multiple cutting plate (portions
Point window) and to realize metal window by insulated from each other for cutting plate the plasma of inductively coupled plasma mode of maximization at
Reason device.
However, patent documentation 1 be silent on selecting to be applied to by the material of insulating element insulated from each other for cutting plate or
Select during specific material it is noted that technology item related content.
In addition, recording in patent documentation 2: the same plasma processing apparatus in inductively coupled plasma mode
In, in the lower surface of the dielectric window constituting using multiple segmentation dielectric components, it is provided for protecting loading and unloading of dielectric window
Dielectric cap, and this dielectric cap is divided into the technology of multiple segmentation.In this dielectric cap, it is provided with for preventing
Only the damage of dielectric window caused by the clearance opening intersegmental with shim in the thermal expansion of segmentation, deposit to
The cover plate of the deposition of gap.
However, documents 2 are not the technology of the part window composition metal window using multiple electric conductivity insulated from each other.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2015-22806: claim 1, paragraph 0028～0029, Fig. 1
Patent documentation 2: Japanese Unexamined Patent Publication 2013-149377 publication: claim 1, paragraph 0042/0057, Fig. 3
Content of the invention
The technical problem solving is wanted in invention
The present invention be in view of situation as above and make, its object is to provide and a kind of include that there is resistant to plasma
The plasma processing apparatus of the metal window of body and light weight.
For solving the technical scheme of technical problem
The plasma processing apparatus of the present invention are to the processed substrate execution processing in space having carried out vacuum exhaust
The corona treatment being carried out using plasmarized processing gas, above-mentioned plasma processing apparatus are characterised by, bag
Include: include the mounting table for loading above-mentioned processed substrate, the upper surface open relative with this mounting table and electrical ground
Metal process container；Metal window, it includes forming the side in above-mentioned process space with the opening closing above-mentioned process container
The part window of multiple electric conductivity of formula arrangement；Be arranged between above-mentioned process container and part window and adjacent part window that
Resinous insulating element between this；The insulating element lid of ceramic, it covers the process space side of above-mentioned insulating element
Face；With for utilizing inductively by plasma antenna plasmarized for above-mentioned processing gas, it is provided in above-mentioned
The upper side of metal window is relative with this metal window.
Above-mentioned plasma processing apparatus can also have following structure.
A () above-mentioned insulating element lid is divided into some lids, and be provided with adjacent from the covering of above-mentioned process space side
The part lid ceramic in gap each other gap cover.Above-mentioned part lid and gap cover are fastened to by metal bolt
State part window, and be provided with the bolted cover from the ceramic processing the above-mentioned bolt of space side covering.
B (), in (a), above-mentioned metal window doubles as supplying the gas spray of processing gas into above-mentioned process space, on
State gap cover at least provided with the part lid in the region to the supply that the processed substrate processing in space carries out processing gas
On.
(c) in order to expand process container electrical distance with part window or adjacent part window each other, in above-mentioned insulating element
Lower surface be formed with the lower surface along above-mentioned insulating element bearing of trend extend and cross sectional shape to process space side
Prominent protruding part, is formed with the groove portion chimeric with above-mentioned protruding part on the insulating element lid covering lid insulating element.
D () is in the side wall relative to each other of process container and part window or adjacent part window each other relative to each other
Side wall is formed with stage portion, and the state that above-mentioned insulating element lid is locked on above-mentioned stage portion with its side edge part is arranged on metal
Window.Now, in the side wall than above-mentioned the stage portion process container of side or part window on the lower, it is formed with and holds for expanding to process
The cut sides of device electrical distance each other with part window or adjacent part window.In addition, above-mentioned insulating element lid be divided into multiple
Part is covered, and the end of an adjacent side of part lid overlaps the upper surface of the part lid of the opposing party.
E anodized is passed through in the face of the process space side of () above-mentioned part window or ceramic spraying plating forms anti-plasma
Coating.
F () above-mentioned insulating element is bigger than the specific insulation of the pottery constituting above-mentioned insulating element lid by specific insulation
Resin is constituted.
Invention effect
Using light weight and the resinous insulating element of high insulating property is carried out between process container and part window the present invention
And the insulation between adjacent part window, and resinous insulating element is protected to exempt from using the insulating element lid of ceramic
The impact of subject plasma, it is possible to maintain to be fed into processing the plasmarized required metal of processing gas in space
The function of window, and it is capable of the lightweight of metal window.
Brief description
Fig. 1 is that the vertical of the plasma processing apparatus of embodiment cuts side view.
Fig. 2 is provided in the plane graph of the metal window on above-mentioned plasma processing apparatus.
Fig. 3 is provided in the amplification view of the insulating element lid on above-mentioned metal window.
Fig. 4 be remove above-mentioned insulating element lid in the state of metal window amplification view.
Fig. 5 is the first amplification longitudinal section of above-mentioned metal window.
Fig. 6 is the second amplification longitudinal section of above-mentioned metal window.
Fig. 7 is the 3rd amplification longitudinal section of above-mentioned metal window.
Fig. 8 is the amplification view of the insulating element lid of the outer circumferential side of metal window.
Fig. 9 is the first amplification longitudinal section of the metal window of second embodiment.
Figure 10 is the second amplification longitudinal section of the metal window of second embodiment.
Figure 11 is the 3rd amplification longitudinal section of the metal window of second embodiment.
Figure 12 is the amplification view of the metal window of the 3rd embodiment.
Figure 13 is the first amplification longitudinal section of the metal window of the 3rd embodiment.
Figure 14 is the second amplification longitudinal section of the metal window of the 3rd embodiment.
Description of reference numerals
G glass substrate
1 plasma processing apparatus
10 vessels
100 process spaces
11 metal frames
13 mounting tables
20 insulating element lids
2nd, 2a～2m, 2a, 2b part are covered
21st, 21a～21c gap cover
22 bolted covers
30th, 30a～30c part window
31st, 31a～31d, 31a, 31b insulating element
5 high frequency antennas
8 control units.
Specific embodiment
First, with reference to Fig. 1, Fig. 2, the overall structure of the plasma processing apparatus 1 of embodiments of the present invention is carried out
Explanation.
Plasma processing apparatus 1 can be used in the rectangular substrate as processed substrate, the glass base of such as fpd
The upper formation metal film being formed during thin film transistor (TFT) of plate (being denoted as " substrate g " below), ito film, oxide-film etc. become film process, to this
Etch processes that a little films are etched, the ashing of resist film such as process at the various corona treatments.Herein, as fpd, permissible
Illustrate liquid crystal display (lcd), electroluminescent (electro luminescence；El) display, plasma display
(pdp) etc..In addition, plasma processing apparatus 1 are not limited to the substrate g of fpd additionally it is possible to be used for solar panel
The above-mentioned various corona treatments of substrate g.
Vertical as Fig. 1 cuts shown in side view, and plasma processing apparatus 1 are included by conductive material for example by internal face quilt
The vessel 10 of the square tube shape that the aluminum that anodized is crossed is constituted, this vessel 10 electrical ground.In vessel 10
Upper surface be formed with opening, this opening is airtightly closed with this vessel 10 insulation set rectangular-shaped metal window 3.
The space being surrounded by these vessels 10 and metal window 3 becomes the process space 100 of substrate g, the sky of the upper side of metal window 3
Between become configuring high-frequency antenna (plasma antenna) 5 antenna chamber 50. in addition, process space 100 side wall be provided with use
Gate valve 102 in the moving mouth 101 taking out of and moving into glass substrate g with for opening and closing moving mouth 101.
In the lower side processing space 100, it is oppositely disposed the mounting table for loading substrate g with above-mentioned metal window 3
13.Mounting table 13 is made up of the aluminum that conductive material such as surface was anodized.It is positioned in the base in mounting table 13
Plate g is adsorbed by electrostatic chuck (not shown) and keeps.Mounting table 13 is accommodated in insulator frame 14, is arranged on across this insulator frame
The bottom surface of vessel 10.
It is connected with the second high frequency electric source 152 via adapter 151 in mounting table 13.Second high frequency electric source 152 is to mounting table
13 RF powers applying biasing, such as frequency are the RF power of 3.2mhz.Generated by the RF power of this biasing
Automatic biasing can be introduced into the ion in the plasma generating in process space 100 to substrate g.
In addition, in mounting table 13, be provided with temperature for control base board g by heating units such as ceramic heaters and
Temperature control device, temperature sensor and the he gas for the back side supply heat transfer to substrate g that refrigerant flow path is constituted
Gas flow path (all not shown).
In addition, being formed with air vent 103 in the bottom surface of vessel 10, it is connected with including vacuum pump in this air vent 103
Deng vacuum exhaust portion 12.The inside processing space 100 is during corona treatment by this vacuum exhaust portion 12 vacuum exhaust
Pressure.
Such as Fig. 1 and as from process space 100 side observe metal window 3 plane graph Fig. 2 shown in, in vessel 10
The upper surface side of side wall, is provided with the metal frame 11 as the rectangular-shaped framework being made up of metals such as aluminum.In vessel 10
It is provided with and metal frame 11 between for airtightly keeping processing the seal member 110 in space 100.Herein, vessel 10 He
Metal frame 11 constitutes the process container of present embodiment.
In addition, the metal window 3 of this example is divided into some windows 30, these part windows 30 are configured in metal frame 11
Inner side, is monolithically fabricated rectangular-shaped metal window 3.Each several part window 30 for example by nonmagnetic material and the metal of electric conductivity, aluminum or contain aluminum
Alloy etc. constitute.
In addition, each several part window 30 doubles as the spray head of processing gas supply.For example, as shown in figure 5, each several part window 30 is adopted
With overlapping to form successively from downside for the multiple processing gas taps 302 processing space 100 supply processing gas
Spray shower plate 305 and be used between this shower plate 305 forming the processing gas diffuser casing 301 making processing gas spread
The structure of metal window body 303.Shower plate 305 is fastened on by metal bolt 201 and constitutes processing gas diffuser casing 301
The lower face side in the region in the outside of recess.Part window including these structures is maintained at process sky via maintaining part (not shown)
Between 100 top surface side.
In addition, for the plasma-resistance improving part window 30, the face (spray of process space 100 side of each several part window 30
Drench the lower surface of plate 305) it is carried out anti-plasma coating.The concrete example of anti-plasma coating can be enumerated and utilize anodic oxygen
Change the formation of the dielectric film of process or ceramic spraying plating.
As shown in figure 1, the processing gas diffuser casing 301 of each several part window 30 is via gas supply pipe 41 and processing gas supply
Portion 42 connects.Qi-regulating from needed for processing gas supply unit 42 supplies above-mentioned one-tenth film process, etch processes, ashing process etc.
Body.In addition, for the sake of illustrating conveniently, Fig. 1 shows the state that a part window 30 is connected with processing gas supply unit 42, but
The processing gas diffuser casing 301 of actually each several part window 30 is connected with processing gas supply unit 42.
In addition, as shown in Fig. 1 and Fig. 5 etc., in the such as metal window body 303 of each several part window 30, being formed with and make temperature
The temperature adjusting adjusts the temperature of fluid circulation to adjust stream 307.This temperature adjusts stream 307 to adjust fluid supply unit to be connected with temperature, based on setting
In the temperature detection result of the temperature sensor of part window 30, fluid is adjusted to carry out using adjusting the temperature of fluid supply unit supply from this temperature
Temperature adjustment, so that part window 30 becomes predetermined temperature (temperature tune fluid supply unit, temperature tune sensor are all not shown).
Part window 30 separated from one another passes through insulating element 31 and metal frame 11 or the vessel 10 of side below is electrically connected
Connect, and adjacent part window 30 is insulated from each other also by insulating element 31 each other.For example, as shown in figure 5, insulating element 31 has
There is the vertical sectional shape of the movable fit and adjacent part window 30 between, be formed on the relative side of each several part window 30
Stage portion (being the shower plate 305 projecting from the side wall of metal window body 303 in the example of Fig. 5) supporting.
Herein, Fig. 2 is the figure seeing metal window 3 from process space 100 side, and insulating element 31 is covered by part lid 2 described later
Lid and invisible, but the upper side in the allocation position of these part windows 2 is provided with insulating element 31.
In the plasma processing apparatus 1 of this example, insulating element 31 adopts ptfe
(polytetrafluoroethylene；Politef) etc. fluororesin.The specific insulation of such as ptfe is 1018[ω·cm
(23 DEG C)], density is 2.1～2.2 [g/cm3] about.Using such resinous insulating element 31, with such as conduct insulation
The material of part 31 adopts aluminium oxide (specific insulation ＞ 1014Left and right [ω cm (23 DEG C)] about, density 3.9 about [g/
cm3]) situation compare, high insulating properties and the lightweight of the metal window 3 that comprises insulating element 31 can be realized simultaneously.
In addition, as shown in figure 1, the upper side in metal window 3 is configured with top plate portion 61, this top plate portion 61 is by being arranged on metal
The side of sidewall portion 63 of frame 11 is supported.
The space being surrounded by metal window 3 described above, side of sidewall portion 63 and top plate portion 61 constitutes antenna chamber 50, in antenna chamber
50 inside, is configured with high frequency antenna 5 (Fig. 1) towards part window 30.High frequency antenna 5 is for example via by insulating element (not shown)
The distance piece constituting and part window 30 separate configuration.High frequency antenna 5 with face corresponding with each several part window 30 along rectangular-shaped
Metal window 3 axially about mode be formed as vortex shape (omit plane diagram).In addition, the shape of high frequency antenna 5 does not limit
In vortex shape or make one or more antenna traces be formed as the coil antenna of ring-type.Alternatively, it is also possible to using on one side
Offset angular is while wind multiple antennas and circuit is integrally formed into Vorticose multiple antenna.Like this, as long as in metal window 3
Or with the corresponding face of each several part window 30 of composition metal window 3, by along its circumferentially around in the way of be provided with antenna traces, just
No matter the structure using which kind of high frequency world 5.
In each high frequency antenna 5, it is connected with the first high frequency electric source 512 via adapter 511.In each high frequency antenna 5 from first
High frequency electric source 512 for example supplies the RF power of 13.56mhz via adapter 511.Thus, during corona treatment,
The respective surface induction of part window 30 goes out vortex flow, by this vortex flow process space 100 be internally formed induction field.From gas
It is plasmarized in process space 100 that the processing gas that body tap 302 is discharged pass through induction field.
In addition, as shown in figure 1, being provided with control unit 8 in this plasma processing apparatus 1.Control unit 8 includes having does not scheme
Cpu (the central processing unit showing；Central processing unit) and storage part computer, have in this storage part record
Combination is had and carries out vacuum exhaust and will be located using high frequency antenna 5 to being configured with the process space 100 of substrate g for output execution
Process gases is plasmarized and processes the program that the step (order) of the control signal of the action of substrate g is organized.This program is saved in
For example in the storage medium such as hard disk, compact disk (cd), magneto-optic disk, storage card, thus it is installed in storage part.
In including configuration plasma processing meanss 1 described above, part window 30 is in order to suppress to process in space 100
Damage caused by the plasma occurring, is carried out the anti-plasma coating using anodized or ceramic spraying plating.Separately
On the one hand, metal frame 11 and part window 30 and adjacent part window 30 insulating element 31 insulated from each other are made, using high insulation
The resin such as performance and light ptfe.However, the plasma-resistance of resin does not have the plasma-resistance of the pottery such as aluminium oxide high.
And then, these resins are also difficult to the anti-plasma coating using anodized or ceramic spraying plating.
Therefore, the plasma processing apparatus 1 of this example, cover process space 100 side of insulating element 31 by setting
The insulating element lid 20 of the ceramic in face is protecting insulating element 31 from the impact of plasma.
Hereinafter, with reference to Fig. 2～Fig. 8, the concrete structure of insulating element lid 20 is illustrated.
As shown in Fig. 2 part window 30 be divided into as needed variously-shaped.Segmentation shape according to these part windows 30
Shape, configuration between metal frame 11 and part window 30 and adjacent part window 30 insulating element 31 each other configuring area
The shape in domain complicates.Insulating element lid 20 needs to cover all faces of process space 100 side of insulating element 31, but utilizes shape
The insulating element lid 20 being integrally formed is come to cover the region of this complicated shape be difficult.
Therefore, the insulating element lid 20 of this example is divided into some lids 2.For example, each several part lid 2 is elongated by being configured to
The part of the ceramic such as flat aluminum constitute.Constitute covering insulating element 31 by arranging these some lids 2
The insulating element lid 20 of configuring area.
However, only arranging some lids 2, can lead to form gap each other in the part lid 2 being adjacent to.So
Gap, because temperature during corona treatment rises the expansion of caused part lid 2, A/F becomes big, thus etc.
Gas ions enter wherein, lead to insulating element 31 to damage, or the change of the A/F with gap, and in gap, deposition is heavy
Long-pending thing is stripped it is possible to pollute substrate g.
Therefore, the insulating element 20 of this example, when combining some lids 2 and constituting insulating element lid 20, becomes energy
The damage of insulating element 31 and the structure of the generation of stripping of deposit that enough suppression are led to due to above-mentioned gap.
For example, in the insulating element lid 20 shown in Fig. 2, the region in the gap between forming part lid 2 is some lids 2
The region confluxed each other.In Fig. 2, form the region in such gap with dotted line and mark reference (i)～(v).?
In Fig. 3～Fig. 8 below illustrating, Fig. 3～Fig. 7 is the structure of the part lid 2 representing and being arranged on region (i), and Fig. 8 represents and is arranged on
The structure of the part lid 2 in region (iv).
Fig. 3 is that the part lid 2 in region (i) (is labelled with the identifier " 2a～2c " according to allocation position simultaneously.Below, right
" 2d～2m " is same.) plane graph, Fig. 4 be remove these part lids 2a～2c in the state of part window 30 (mark simultaneously
Identifier " 30a～30c " according to allocation position) and insulating element 31 (be labelled with the identifier according to allocation position simultaneously
“31a、31b”.Below, same to " 31c, 31d ".) plane graph.In addition, Fig. 5～Fig. 7 be respectively Fig. 3, Fig. 4 in along with
A-a ' line that chain-dotted line represents, b-b ' line, c-c ' line vertical cut a side view to show.
As shown in Figure 3, Figure 4, in region (i), to be fitted to the side in the gap of the part window 30a～30c being adjacent to
Formula, sees from process space 100 and is configured with insulating element 31a, 31b in t shape.In region (i), by three parts are covered
2a～2c is arranged in insulating element 31a, 31b lower surface, covers these insulating elements 31a, 31b from processing space 100 side.
As shown in the dotted line in Fig. 4, Fig. 5～Fig. 7, the width dimensions of the short side direction of each several part lid 2a～2c are formed to
The chi in the region of lower face side circumference of enough lower surfaces covering across insulating element 31a, 31b and part window 30a～30c
Very little.Like this, insulating element 31a, 31b are covered using the wide part lid 2a of width～2c, even if plasma is from part lid 2a
It is also possible to suppression plasma reaches insulating element 31a, 31b in the case that the side of～2c enters.
However, as shown in figure 3, the end of the part lid 2a being adjacent in the end with part lid 2b, 2c, part lid 2a
A part formed breach.And, part lid 2b, 2c are configured to be fitted in this breach.Form breach like this and reduce part
The width dimensions of lid 2a, thus make the region in gap between forming part lid 2b-2a, 2c-2a close to each other, can be accommodated in more
In compact region.
In addition, as shown in Fig. 3, Fig. 6, Fig. 7, the gap cover that the forming region in these gaps is made up of the flat board of ceramic
21 (are labelled with the identifier " 21a " according to allocation position simultaneously.Below, same to " 21b, 21c ".) cover from process space side
Lid.As shown in fig. 7, gap cover 21a is fastened on the lower face side of part window 30a by the metal bolt 202 with multistage head.
As a result, the part lid 2a～2c being clipped between gap cover 21a and part window 30a is also fastened to the lower surface of part window 30a.
Herein, as shown in fig. 7, the head of metal bolt 202 from the following table of gap cover 21 towards processing space 100 side
Prominent, this head is covered by the bolted cover 22 of ceramic.The lateral circle surface of such as head is recessed with the bolted cover 22 receiving this head
Between the inner peripheral surface in portion, cutting is formed with the screw thread that can screw togather each other, and by this bolt, bolted cover 22 is fixed on above-mentioned head
Portion.
In addition, eliminating the diagram of longitudinal section, but the shower plate 305 of part window 30a is fastened on metal window body 303
Bolt 201 head, one part projects to the lower side from the lower surface of shower plate 305.On the other hand, part lid 2b,
2c is formed with and is inserted into this recess, during using this 21a standing part lid 2b, 2c of gap, embedding by these heads and recess
Close and prevent the horizontal position of part lid 2b, 2c from shifting.
Similarly it is provided with the gap cover 21 in the region that covering part lid 2 confluxes in region (ii) in Fig. 2, (iii).
Herein, it is not limited to be applied to be arranged on all portions of metal window 3 using the structure of the part lid 2 of Fig. 3～Fig. 7 explanation
Divide the situation of lid 2.For example, in Fig. 2, the gas discharge hole forming region 300 shown in chain-dotted line surrounds (only illustrates that gas is discharged
The part in hole 302) be by processing gas supply region, placement substrate g in the way of relative with this region.
Therefore, gap between the part lid 2 in gas discharge hole forming region 300 for the configuration is exposed to processing space 100
When, easily become plasma via this gap enter, and the deposit depositing in the gap fall former on substrate g
Cause.Therefore, (set in the region (i) in Fig. 2～(iii) in the part lid 2 in gas discharge hole forming region 300 for configuration
The part lid 2 put) it is provided with from the gap cover 21 processing space 100 side coverage gap.
On the other hand, it is arranged on the outside of gas discharge hole forming region 300, the metal frame in the example shown in Fig. 2
The part lid 2 of 11 sides (the inwall side of vessel 10) configures from the position relative with substrate g with leaving, and sometimes goes back and shape
The region becoming plasma separates.In this case, shown in the part lid 2 as shown in region (iv)～(v) of Fig. 2 it is also possible to
It is not provided with covering the gap cover 21 in the gap of part lid 2 being adjacent to, and the structure simplifying part lid 2 (amplifies display in Fig. 8
Part lid 2j, the 2k in region (iv)).Now, part lid 2 is fastened directly to the lower surface of part window 30 by bolt 202.
Hereinafter, the effect to the plasma processing apparatus 1 of above-mentioned embodiment illustrates.
First, open gate valve 102, using transport mechanism from adjacent vacuum carrying room (all not shown) via carrying-in/carrying-out
Substrate g is moved in process space 100 mouth 101.Then, substrate g is positioned in mounting table 13, using electrostatic (not shown)
Sucker is fixed, and on the other hand, so that above-mentioned transport mechanism is exited from process space 100, closing gate valve 102.In addition, metal window
3 adjust fluid to be adjusted to predetermined temperature by the temperature of temperature tune stream 307 supply to each several part window 30.
Then, from processing gas supply unit 42 via each several part window 30 processing gas diffuser casing 301 to process space 100
Interior supply processing gas and carry out processing the vacuum exhaust in space 100 from vacuum exhaust portion 12, will process tune in space 100
Save as such as 0.66～26.6pa about pressure atmosphere.In addition, the he gas of the rear side supply heat transfer to substrate g.
Then, from the first high frequency electric source 512, RF power is applied to high frequency antenna 5, thus processing sky across metal window 3
Between generate uniform induction fields in 100.As a result, passing through induction field, processing gas are in process space 100 by plasma
Body, generates highdensity inductively coupled plasma.Then, by applying to mounting table 13 from the second high frequency electric source 152
The RF power of biasing, the example in plasma is introduced in substrate g, carries out the corona treatment of substrate g.
Then, after the corona treatment of predetermined time, stop the electricity from each high frequency electric source 512,152
Power supply, from processing gas supply unit 42 processing gas supply and process space 100 in vacuum exhaust, with move into
When contrary order take out of substrate g.
Inner utilization plasma in the process space 100 carrying out action specification above carries out the plasma of substrate g
During process, in part window 30, the gap of adjacent part lid 2 is covered by gap cover 21 from process space 100 side.As a result,
Plasma can be suppressed to enter via above-mentioned gap, be prevented from the damage of insulating element 31.
Further, since above-mentioned gap is covered by gap cover 21, can suppress the deposits in this gap, deposit
Stripping, overburden drop to first-class with the substrate g of this gap relative configuration.
Further, by the region of setting insulating element lid 20 is limited to the configuring area of metal window 3, and for example by gold
The lower face side belonging to window 3 is integrally compared with the situation that the lid of ceramic covers, and is capable of comprising insulating element 31 and insulation division
The lightweight of the metal window 3 of part lid 20.In addition, because the joining of the part lid 2 of the ceramic bigger than specific heat with metal phase
Put the limited areal extent that region is limited at the degree that can cover insulating element 31, so can also improve adjusting using temperature
The response in temperature adjustment for the metal window 3 of fluid.
According to the plasma processing apparatus 1 of present embodiment, there is following effect.Using light weight and insulating properties are high
Resinous insulating element 31 carry out between metal frame 11 or vessel 10 (process container) and part window 30 and adjacent
The insulation between 30 each other of part window, and protect insulating element 31 from plasma using the insulating element lid 20 of ceramic
The impact of body, it is possible to maintain to be fed into processing the plasmarized required metal window 3 of processing gas in space 100
Function, and metal window 3 lightweight can be made.
Then, the second embodiment shown in Fig. 9～Figure 11 is to prevent metal frame 11 (process container) and part window
30 or the short circuit each other of adjacent part window 30 and in configuration in these metal frames 11 and part window 30 and adjacent part window 30
Insulating element 31a each other and part cover the example arranging labyrinth structure between 2a.
The longitudinal section of Fig. 9～Figure 11 illustrates above-mentioned labyrinth structure is applied in the region (i) (Fig. 3, Fig. 4) of Fig. 2
Insulating element 31a, 31b and the example of part lid 2a～2c.In this example, in the lower surface of each insulating element 31a, 31b, along
The bearing of trend of this insulating element 31 extends, and is formed with the protruding part 311 (insulation that cross sectional shape phase processor space 100 side projects
Part 31a).On the other hand, in the upper surface of the part lid 2a～2c (part lid 2a) constituting insulating element lid 20, be formed with
The groove portion 23 (Fig. 9～Figure 11 illustrate only the groove portion 23 of part lid 2a) that above-mentioned protruding part 311 is fitted together to.
Like this, in metal frame 11, labyrinth structure is set each other with part window 30 or adjacent part window 30, thus
Electrical distance each other is widened, and is prevented from occurring with short-circuit generation to form enough inductively coupled plasmas
Bad.
In addition, the protruding part 311 of formation labyrinth structure and groove portion 23 are not limited to set along the bearing of trend of insulating element 31
Put the situation of string it is also possible to arrange multiple row.
Then, the 3rd embodiment shown in Figure 12～Figure 14 with by part lid 2 be clipped in gap cover 21 and part window 30 it
Between the insulating element lid 21 of first embodiment compare, the installation method of part lid 2b is different.I.e., in this example, in gold
Genus frame 11 (process container) side relative to each other each other with side wall part window 30 relative to each other or adjacent part window 30
Wall forms stage portion 308, covers the side edge part of 2b using this stage portion 308 locking part, thus part lid 2b is arranged on gold
Belong on window 3.
For example, Figure 12 illustrates mounting portion in the way of insulating element 31a, 31b of covering the region (i) being arranged at Fig. 2
The example of lid 2l, 2m (part lid 2b).Figure 13, Figure 14 are to see along a-a ' line shown in dash-dot line, b-b ' line in fig. 12
Vertical section of side view obtained from seeing.
As shown in Figure 13, Figure 14, in the part window 30a～30c of this example, the shower plate 305a of lower face side is projected into ratio
The position of the outer side of side wall of metal window body 303, thus be formed with stage portion 308.Shown in Figure 12 two part covers 2m, 2l
(2b), the side edge part of its both sides is engaged that (in Figure 12, the region shown in long dotted line is to be positioned in stage portion 308 by stage portion 308
On side edge part).In addition, insulating element 31c, 31d (31b) are carried with the state being entrenched in the gap between adjacent part window 30
Put on these parts lid 2m, 2l.
In addition, as shown in short dotted line in Figure 12 and Figure 14, positioned at the portion of a side of part lid 2l, the 2m being adjacent to
Divide lid 2m, its end overlaps the upper surface of the part lid 2l of the opposing party.By using such stepped construction, even if being not provided with
Gap cover 2l is it is also possible to avoid being formed gap between part lid 2l, 2m.In addition, as shown in Figure 13, Figure 14, being laminated adjacent joining
In the case of part lid 2l, 2m of putting, also with the height and position of each several part lid 2l, 2m as one man, adjust and engage its side edge part
The height and position of stage portion 308.
In addition, in the stage portion 308 of the midway that part lid 2l, 2m are locked on the side wall being formed at part window 30
Upper and insulating element 31c, 31d are arranged in the 3rd embodiment on these parts lid 2l, 2m, also part lid 2l,
The lower side of 2m forms the region being not inserted into insulating element 31c, 31d.Therefore, in order to prevent from being not inserted into insulating element 31c,
It is short-circuited between part window 30 in the region of 31d, in the side wall of the part window 30a～30c of the lower side of part lid 2l, 2m
Face, is formed with the cut sides 306 of the electrical distance for increasing the part window 30a～30c being adjacent to.
In each embodiment described above, show the example utilizing fpd substrate as processed substrate, but as long as
It is rectangular substrate it is also possible to be used for the other kinds of substrates such as the substrate of solar panel.
Claims (10)
1. a kind of plasma processing apparatus, it executes utilization to the processed substrate in space that processes having carried out vacuum exhaust
The corona treatment that plasmarized processing gas are carried out, described plasma processing apparatus are characterised by, comprising:
Including the mounting table for loading described processed substrate, the upper surface open relative with this mounting table and electrical ground
Metal process container；
Metal window, what it included arranging in the way of the opening closing described process container to form described process space multiple leads
Electrical part window；
It is arranged between described process container and part window and adjacent part window resinous insulation division each other
Part；
The insulating element lid of ceramic, it covers the face of the process space side of described insulating element；With
For using inductively by plasma antenna plasmarized for described processing gas, it is provided in described gold
The upper side belonging to window is relative with this metal window.
2. plasma processing apparatus as claimed in claim 1 it is characterised in that:
Described insulating element lid is divided into some lids, and is provided with from the adjacent part lid of described process space side covering
The gap cover of the ceramic in gap each other.
3. plasma processing apparatus as claimed in claim 2 it is characterised in that:
Described part lid and gap cover are fastened to described part window by metal bolt, and be provided with from process space side cover
Cover the bolted cover of the ceramic of described bolt.
4. plasma processing apparatus as claimed in claim 2 or claim 3 it is characterised in that:
Described metal window double as into described process space supply processing gas gas spray, described gap cover at least provided with
Part in the region to the supply that the processed substrate processing in space carries out processing gas covers.
5. the plasma processing apparatus as any one of Claims 1 to 4 it is characterised in that:
In order to expand process container electrical distance with part window or adjacent part window each other, in the lower surface of described insulating element
The bearing of trend being formed with lower surface along described insulating element extends and cross sectional shape is to processing prominent the dashing forward in space side
Shape portion, is formed with the groove portion chimeric with described protruding part on the insulating element lid covering lid insulating element.
6. plasma processing apparatus as claimed in claim 1 it is characterised in that:
Side wall relative to each other or adjacent part window side wall relative to each other each other in process container and part window
It is formed with stage portion, the state that described insulating element lid is locked on described stage portion with its side edge part is arranged on metal window.
7. plasma processing apparatus as claimed in claim 6 it is characterised in that:
In the side wall than described the stage portion process container of side or part window on the lower, be formed with for expand process container with
The cut sides of part window or adjacent part window electrical distance each other.
8. plasma processing apparatus as claimed in claims 6 or 7 it is characterised in that:
Described insulating element lid is divided into some lids, and the end of an adjacent side of part lid overlaps the portion of the opposing party
Divide the upper surface of lid.
9. the plasma processing apparatus as any one of claim 1～8 it is characterised in that:
Anodized is passed through in the face of the process space side of described part window or ceramic spraying plating forms anti-plasma coating.
10. the plasma processing apparatus as any one of claim 1～9 it is characterised in that:
Described insulating element is by the specific insulation resin structure bigger than the specific insulation of the pottery constituting described insulating element lid
Become.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015144987A JP6593004B2 (en) | 2015-07-22 | 2015-07-22 | Plasma processing equipment |
| JP2015-144987 | 2015-07-22 |
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| JP (1) | JP6593004B2 (en) |
| KR (2) | KR101876873B1 (en) |
| CN (1) | CN106373850B (en) |
| TW (1) | TWI703901B (en) |
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| CN108987234A (en) * | 2017-06-05 | 2018-12-11 | 东京毅力科创株式会社 | Plasma processing apparatus and gas spray |
| CN109585331A (en) * | 2017-09-29 | 2019-04-05 | 台湾积体电路制造股份有限公司 | Integrated circuit production system with adjustable gas injector |
| CN110648890A (en) * | 2018-06-26 | 2020-01-03 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN112922935A (en) * | 2019-12-05 | 2021-06-08 | 中微半导体设备(上海)股份有限公司 | Connection structure and plasma processing apparatus |
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| KR102256691B1 (en) * | 2017-10-24 | 2021-05-26 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| JP7008497B2 (en) * | 2017-12-22 | 2022-01-25 | 東京エレクトロン株式会社 | Substrate processing equipment and temperature control method |
| KR101979222B1 (en) * | 2017-12-22 | 2019-05-17 | 인베니아 주식회사 | Assembly for generating plasma and apparatus for processing substrate having the same |
| JP7282646B2 (en) * | 2019-09-26 | 2023-05-29 | 株式会社アルバック | Vacuum processing equipment |
| TW202232564A (en) * | 2020-10-15 | 2022-08-16 | 日商東京威力科創股份有限公司 | Fastening structure, plasma processing apparatus, and fastening method |
| JP2022079944A (en) | 2020-11-17 | 2022-05-27 | 東京エレクトロン株式会社 | Fastening structure, fastening method, and plasma processing device |
| JP2022114629A (en) | 2021-01-27 | 2022-08-08 | 東京エレクトロン株式会社 | Fastening structure, plasma processing device and fastening method |
| JP2023003828A (en) * | 2021-06-24 | 2023-01-17 | 東京エレクトロン株式会社 | Film deposition apparatus and film deposition method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201717710A (en) | 2017-05-16 |
| KR20180079258A (en) | 2018-07-10 |
| JP2017027775A (en) | 2017-02-02 |
| CN106373850B (en) | 2018-06-22 |
| KR101876873B1 (en) | 2018-07-10 |
| TWI703901B (en) | 2020-09-01 |
| JP6593004B2 (en) | 2019-10-23 |
| KR20170012058A (en) | 2017-02-02 |
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