CN106356415B - The production method of back metal grid - Google Patents
The production method of back metal grid Download PDFInfo
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- CN106356415B CN106356415B CN201611097321.3A CN201611097321A CN106356415B CN 106356415 B CN106356415 B CN 106356415B CN 201611097321 A CN201611097321 A CN 201611097321A CN 106356415 B CN106356415 B CN 106356415B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 40
- 239000002184 metal Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000010410 layer Substances 0.000 claims abstract description 114
- 239000011241 protective layer Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 32
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000010936 titanium Substances 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 24
- 239000006117 anti-reflective coating Substances 0.000 claims description 21
- 230000007704 transition Effects 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 229920000642 polymer Polymers 0.000 description 14
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 150000001722 carbon compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of production methods of back metal grid, include the following steps：Semi-conductive substrate is provided, the Semiconductor substrate back side is sequentially formed with photosignal transport layer, titanium nitride protective layer, hard mask layer and patterned photoresist layer；Using the patterned photoresist layer as mask, the hard mask layer and partial nitridation titanium protective layer are performed etching using fluoro-gas；Degumming process is carried out in the cavity for etching the titanium nitride protective layer；The semiconductor devices is cleaned；Using the hard mask layer as mask, the titanium nitride protective layer and the photosignal transport layer are performed etching, form back metal grid.The present invention solves the problems, such as the metallic grid sidewall roughness that the production method using traditional back metal grid is formed.
Description
Technical field
The present invention relates to semiconductor process technique fields, and in particular to a kind of production method of back metal grid.
Background technology
In the semiconductor device, generally use back metal grid (Backside Metal Grid) is as photosignal
Transmission channel is most important to the stability of photosignal transmission.
At present, the production method of the back metal grid in semiconductor devices production process includes the following steps：
First, as shown in Figure 1, sequentially forming photosignal transport layer 103 at 100 back side of Semiconductor substrate, titanium nitride is protected
Sheath 104, hard mask layer 106 and patterned photoresist layer 108；
Then, as shown in Fig. 2, being mask with the graphical photoresist layer 108, using fluoro-gas to the hard mask layer
106 and partial nitridation titanium protective layer 104 perform etching, form first groove 110, then work of removing photoresist carried out by the board that removes photoresist
Skill, to remove patterned photoresist layer 108；
Then, the Semiconductor substrate 100 is cleaned using wet clean process；
Then, as shown in figure 3, being mask with the hard mask layer 106, to remaining titanium nitride in Semiconductor substrate 100
Protective layer 104 and photosignal transport layer 103 perform etching, to form second groove 111, the photosignal transport layer
103 material is usually metallic aluminium, and multiple above-mentioned groove compositions are grid-like, that is, form back metal grid (as shown in Figure 4).
However, it has been found that after process above, the back metal grid side wall, that is, second groove side wall 111 '
It is very coarse, so that influencing the yield of semiconductor devices.
Invention content
The present invention provides a kind of production method of back metal grid, to solve using traditional back metal grid
The problem of metallic grid sidewall roughness that production method is formed.
The present invention provides a kind of production methods of back metal grid, include the following steps：
Semi-conductive substrate is provided, the Semiconductor substrate back side is sequentially formed with photosignal transport layer, titanium nitride is protected
Sheath, hard mask layer and patterned photoresist layer；
Using the patterned photoresist layer as mask, the hard mask layer and partial nitridation titanium are protected using fluoro-gas
Layer performs etching；
Degumming process is carried out in the cavity for etching the titanium nitride protective layer；
The semiconductor devices is cleaned；
Using the hard mask layer as mask, the titanium nitride protective layer and the photosignal transport layer are performed etching,
Form back metal grid.
Optionally, the material of the hard mask layer is silica, one kind in silicon nitride or combination.
Optionally, the material of the photosignal transport layer is metallic aluminium.
Optionally, transition zone and the protection on the transition zone are also formed on the back side of the Semiconductor substrate
Layer, the photosignal transport layer are formed on the protective layer.
Optionally, the material of the transition zone be silica, one kind in silicon nitride or combination, the material of the protective layer
Matter is titanium nitride.
Optionally, it is also formed with dielectric anti-reflective coating between the titanium nitride protective layer and hard mask layer.
Optionally, the material of the dielectric anti-reflective coating is silicon oxynitride.
Optionally, it is also formed with bottom antireflective coating between the hard mask layer and patterned photoresist layer.
Optionally, the gas used in the degumming process is oxygen.
Optionally, the temperature of the degumming process is at 45 DEG C~50 DEG C.
Optionally, the semiconductor devices is cleaned in 24 hours after the completion of the degumming process.
Optionally, the ammonium fluoride of use and the mixed solution of fluoram carry out wet-cleaning to the semiconductor devices.
Using the production method of back metal grid provided by the invention, hard mask layer and one are etched using fluoro-gas
Divide after titanium nitride protective layer, degumming process is carried out directly in the cavity for performing etching technique, in this way, being produced in etch step
When raw titanium fluoride and carbon compound is also not associated with close, just the carbon in carbon compound is removed by degumming process,
The adhesiveness of polymer is reduced, it is enable to be easier to come off in subsequent wet cleaning.Thus, the gold etched
Possessive case grid side wall, i.e., described second groove side wall 111 ' can more smooth compared with traditional handicraft, smooth, the yield of semiconductor devices
Also it will be promoted.Further, by the temperature setting of degumming process between 45 DEG C -50 DEG C, polymer can be avoided to pass through in this way
High-temperature baking advantageously reduces the removal difficulty of polymer.
Description of the drawings
Fig. 1 is the film layer cross-sectional view before the production method of traditional back metal grid etches；
Fig. 2 is the film layer cross-sectional view after the production method degumming process of traditional back metal grid；
Fig. 3 is the film layer section knot after the completion of the production method photosignal transport layer etching of traditional back metal grid
Structure schematic diagram；
Fig. 4 is the schematic top plan view of metallic grid that the production method of traditional back metal grid is formed；
Fig. 5 is the film layer section of the production method for the back metal grid that the preferred embodiment of the present invention provides before etching
Structure diagram；
Fig. 6 is that film layer of the production method for the back metal grid that the preferred embodiment of the present invention provides after degumming process is cutd open
Face structure diagram；
Fig. 7 is that the production method for the back metal grid that the preferred embodiment of the present invention provides is etched in photosignal transport layer
Film layer cross-sectional view after the completion；
Fig. 8 is the flow diagram of the production method for the back metal grid that the preferred embodiment of the present invention provides；
The description of symbols of attached drawing 1- attached drawings 7 is as follows：
100th, 200- Semiconductor substrates；
201- transition zones；
202- protective layers；
103rd, 203- photosignals transport layer；
104th, 204- titanium nitrides protective layer；
205- dielectric anti-reflective coatings；
106th, 206- hard mask layers；
207- bottom antireflective coatings；
108th, the patterned photoresist layers of 208-；
109th, 209- polymer；
110th, 210- first grooves；
111st, 211- second grooves；
111 ', 211 '-second groove side wall.
Specific embodiment
In the background technology it has been already mentioned that using prior art, the metallic grid side wall that etches on a semiconductor substrate
It is very coarse, so that influencing the yield of semiconductor devices.Applicant has found by further investigation, this is because using containing fluorine gas
Body is produced during being performed etching to hard mask layer 106 and partial nitridation titanium protective layer 104 by titanium fluoride and containing carbonization
The polymer 109 (as shown in Figure 2) that object is combined into is closed, which is adhered to bottom and the side wall of first groove 110
On, even if by wet-cleaning, it is also difficult to remove the polymer 109 completely.Thus, subsequently to photosignal transport layer
103 when performing etching, and due to the blocking of polymer 109, causes the second groove side wall 111 ' etched very coarse, that is, to lead
The side wall for causing metallic grid is very coarse, so as to influence the yield of semiconductor devices.The further analysis of applicant is found, due to passing
Unite degumming process temperature it is higher (usually at 300 DEG C or so), the polymer 109 after the high-temperature baking by degumming process,
It is more difficult to remove by wet clean process.
Based on this, the present invention provides a kind of production method of back metal grid, etches hard mask layer 106 and titanium nitride is protected
After sheath 104, degumming process is directly carried out in the cavity of etching technics, in this way, titanium fluoride in polymer 109 and containing
When carbon compound is also not associated with close, just the carbon in carbon compound by degumming process is removed, reduces polymer
Adhesiveness, it is enable to be easier to come off in subsequent cleaning processes.Thus, etch the side wall of metallic grid, that is, the
Two trenched side-walls 111 ' can be more smooth compared with traditional handicraft, smooth, and the yield of semiconductor devices will also be promoted.Further
, by the temperature setting of degumming process between 45 DEG C -50 DEG C, polymer can be avoided further to be reduced through high-temperature baking in this way
Remove difficulty.
Back metal grid production method proposed by the present invention is made below in conjunction with the drawings and specific embodiments further detailed
It describes in detail bright.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is equal
Using very simplified form and using non-accurate ratio, only to convenience, the embodiment of the present invention is lucidly aided in illustrating
Purpose.
As shown in figure 8, the production method for the back metal grid that the preferred embodiment of the present invention provides, includes the following steps：
S1, semi-conductive substrate is provided, the Semiconductor substrate back side is sequentially formed with photosignal transport layer, titanium nitride
Protective layer, hard mask layer and patterned photoresist layer；
S2, using the patterned photoresist layer as mask, using fluoro-gas to the hard mask layer and partial nitridation titanium
Protective layer performs etching；
S3, degumming process is carried out in the cavity for etching the titanium nitride protective layer；
S4, the semiconductor devices is cleaned；
S5, using the hard mask layer as mask, the titanium nitride protective layer remainder and the photosignal are transmitted
Layer performs etching, and forms back metal grid.
It is introduced in more detail with reference to diagrammatic cross-section 5~7.
With reference to figure 5, in step sl, the material of the photosignal transport layer 203 is, for example, metallic aluminium, the optical telecommunications
The thickness of number transport layer is, for example,The material of the hard mask layer 206 is, for example, silica, nitridation
One kind or combination in silicon, the hard mask layer thickness are, for example,The thickness of the graphical photoresist layer
It spends and isCertainly, in practical applications, the photosignal transport layer 203 also may be used with hard mask layer 206
Using other materials, also, the thickness of above-mentioned film layer can be also adjusted according to process conditions and actual needs.The optical telecommunications
Number transport layer 203 and the generation type of hard mask layer 206 can be chemical vapor deposition (CVD) or physical vapour deposition (PVD)
(PVD), for example, the photosignal transport layer 203 is formed using sputtering technology, the hard mask layer 206 is increased using plasma
Extensive chemical vapor deposition (PECVD) technique is formed.
With continued reference to shown in Fig. 5,200 back side of Semiconductor substrate is also formed with transition zone 201 and positioned at transition zone
Protective layer 202 on 201, the photosignal transport layer 203 are formed on the protective layer 202.The transition zone 201
After formation, 200 surface of Semiconductor substrate can be made more flat, further, the protective layer 202 can be made to be easier to adhere to,
The protective layer 202 can prevent photosignal transport layer 203 and subsurface material cross-diffusion.The material example of the transition zone 201
It is such as silica, one kind in silicon nitride or combination, thickness are, for example,The protective layer 202
Material is, for example, titanium nitride layer, and thickness is, for example,The formation of the transition zone 201 and protective layer 202
Mode can be chemical vapor deposition or physical vapour deposition (PVD).Certainly in practical applications, the transition zone 201 and the protection
The material of layer 202 is not limited to both materials, and thickness can be also adjusted according to process conditions.The photosignal transport layer
Can also be only formed with the transition zone 201 or be only formed with the protective layer between 203 and the Semiconductor substrate 200
202, then the photosignal transport layer 203 located immediately at the back side of the Semiconductor substrate 200.
Refering to what is shown in Fig. 5, it in step sl, is also formed between the titanium nitride protective layer 204 and the hard mask layer 206
There is dielectric anti-reflective coating (DARC) 205, the material of the dielectric anti-reflective coating 205 is silicon oxynitride, and thickness isThe generation type of the dielectric anti-reflective coating 205 can be chemical vapor deposition or physical vapor
Deposition.The material of certain dielectric anti-reflective coating 205 described in practical applications is not limited to silicon oxynitride, and thickness also can root
It is adjusted according to process conditions.
Further, it is also formed with bottom antireflective coating between the hard mask layer 206 and patterned photoresist layer 208
(BARC) 207, the material of the bottom antireflective coating 207 is class photoresist substance, can reduce the graphical photoresist layer 208
In exposure, the reflection of the light of graphical 208 bottom of photoresist layer, thickness is, for example,Certainly exist
The material of bottom antireflective coating 207 described in practical application is not limited to class photoresist substance, thickness also can according to process conditions into
Row adjustment.
Refering to what is shown in Fig. 6, it is mask with the patterned photoresist 208, using fluoro-gas to described in step s 2
Bottom antireflective coating 207, hard mask layer 206, dielectric anti-reflective coating 205 and the titanium nitride protective layer of film layer structure
204 part carries out dry etching, forms first groove 210.The fluoro-gas is, for example, CF4 or C4F8, described to contain
The flow of fluorine gas is, for example, 400sccm~600sccm, and the etching device of use is, for example, capacitance coupling type plasma exciatiaon
Device, energy are, for example, 800W, and the pressure of etching cavity is, for example, 100mTorr~110mTorr.It is understood that work as institute
It states the film layer structure on photosignal transport layer 203 and only includes the patterned photoresist layer 208, bottom antireflective coating
207th, hard mask layer 206 and during titanium nitride protective layer 204, step S2 is then to the bottom antireflective coating 207, hard mask layer
206 and the part of titanium nitride protective layer 204 perform etching；Film layer structure on the photosignal transport layer 203 is only
During including the patterned photoresist layer 208, hard mask layer 206, dielectric anti-reflective coating 205 and titanium nitride protective layer 204,
Step S2 then carves a part for the hard mask layer 206, dielectric anti-reflective coating 205 and titanium nitride protective layer 204
Erosion；Film layer structure on the photosignal transport layer 203 only includes the patterned photoresist layer 208, hard mask layer
206 and during titanium nitride protective layer 204, step S2 then carries out a part for the hard mask layer 206 and titanium nitride protective layer 204
Etching.
In step s3, the degumming process removes photoresist and is used with being carried out in same cavity used in step S2 etchings
Gas be preferably oxygen, effect of removing photoresist is ideal.The temperature of degumming process is preferably 45 DEG C -50 DEG C, avoids polymer
High-temperature baking is carried out, is conducive to remove polymer subsequently through wet clean process.The over etching amount of degumming process is, for example,
100%-200%, to ensure that photoresist is removed clean.The energy of degumming process is, for example, 1000w-1500w.It is appreciated that
It is that, for the patterned photoresist layer 208 of unlike material or thickness, technological parameter can do corresponding adjustment.
In step s 4, wet clean process preferably is completed in 24 hours after the completion of the degumming process, can kept away in this way
Exempting from polymeric long time for generating in etching is attached to the side wall of the first groove 210 and bottom and is difficult to remove.It is described wet
Cleaning solution is, for example, the mixed solution of ammonium fluoride and fluoram used by method etching technics, in certain practical application, no
It is limited to such solution, is also not necessarily limited to wet-cleaning mode.
Refering to what is shown in Fig. 7, in step s 5, with the hard photoresist layer 206 for mask mask, the Semiconductor substrate is carried on the back
Remaining titanium nitride protective layer 204 and photosignal transport layer 203 on face.If the photosignal transport layer 203 is directly formed
On transition zone 201, alternatively, the protective layer 202 is formed directly into the back side of Semiconductor substrate 100, then alternatively, the light
203 layers of back side for being formed directly into Semiconductor substrate 100 of electric signal transmission layer are to fall the semiconductor lining using dry etching
Remaining titanium nitride protective layer 204 and photosignal transport layer 203 stop on the back side at bottom 100.What this dry etching used
Gas is, for example, C4F8, O2 and Ar, and C4F8 flows are, for example, 10sccm~50sccm, O2 flows be, for example, 10sccm~
50sccm, Ar flow are, for example, 500sccm~2000sccm, and energy is, for example, 1500W~1600W, the pressure example of etching cavity
50mTorr~60mTorr in this way.After the completion of etching, second groove 211 is formed, since the polymer generated in step S2 is removed
It is more clean, so the second groove side wall 211 ', i.e. metallic grid side wall, more smooth compared with traditional handicraft, smooth.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (11)
1. a kind of production method of back metal grid, which is characterized in that include the following steps：
There is provided semi-conductive substrate, the Semiconductor substrate back side be sequentially formed with photosignal transport layer, titanium nitride protective layer,
Hard mask layer and patterned photoresist layer；
Using the patterned photoresist layer as mask, using fluoro-gas to the hard mask layer and partial nitridation titanium protective layer into
Row etching；
Degumming process is carried out in the cavity for etching the titanium nitride protective layer, the temperature of the degumming process is 45 DEG C~50
℃；
Semiconductor devices is cleaned；
Using the hard mask layer as mask, the titanium nitride protective layer and the photosignal transport layer are performed etching, formed
Back metal grid.
2. the production method of back metal grid as described in claim 1, which is characterized in that the material of the hard mask layer is
One kind or combination in silica, silicon nitride.
3. the production method of back metal grid as described in claim 1, which is characterized in that the photosignal transport layer
Material is metallic aluminium.
4. the production method of back metal grid as described in claim 1, which is characterized in that the back side of the Semiconductor substrate
On be also formed with transition zone and the protective layer on the transition zone, the photosignal transport layer is formed in the protection
On layer.
5. the production method of back metal grid as claimed in claim 4, which is characterized in that the material of the transition zone is two
One kind or combination in silica, silicon nitride, the material of the protective layer is titanium nitride.
6. the production method of back metal grid as described in claim 1, which is characterized in that the titanium nitride protective layer with it is hard
Dielectric anti-reflective coating is also formed between mask layer.
7. the production method of back metal grid as claimed in claim 6, which is characterized in that the dielectric anti-reflective coating
Material be silicon oxynitride.
8. the production method of back metal grid as described in claim 1, which is characterized in that the hard mask layer with it is graphical
Photoresist layer between be also formed with bottom antireflective coating.
9. such as the production method of back metal grid according to any one of claims 1 to 8, which is characterized in that described to remove photoresist
The gas used in technique is oxygen.
10. such as the production method of back metal grid according to any one of claims 1 to 8, which is characterized in that gone described
The semiconductor devices is cleaned in 24 hours after the completion of adhesive process.
11. such as the production method of back metal grid according to any one of claims 1 to 8, which is characterized in that the fluorine of use
The mixed solution for changing ammonium and fluoram carries out wet-cleaning to the semiconductor devices.
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| CN108375871B (en) * | 2018-02-06 | 2021-08-24 | 武汉新芯集成电路制造有限公司 | Mask plate, manufacturing method and alignment method |
| CN114373677A (en) * | 2020-10-14 | 2022-04-19 | 长鑫存储技术有限公司 | Preparation process of semiconductor structure and semiconductor structure |
| CN112366211A (en) * | 2020-11-26 | 2021-02-12 | 武汉新芯集成电路制造有限公司 | Substrate for backside illuminated image sensor and method for manufacturing backside illuminated image sensor |
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| JP3250240B2 (en) * | 1991-10-15 | 2002-01-28 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| JPH11345874A (en) * | 1998-06-01 | 1999-12-14 | Seiko Epson Corp | Manufacture of semiconductor device |
| JP3257533B2 (en) * | 1999-01-25 | 2002-02-18 | 日本電気株式会社 | Wiring formation method using inorganic anti-reflection film |
| US6497993B1 (en) * | 2000-07-11 | 2002-12-24 | Taiwan Semiconductor Manufacturing Company | In situ dry etching procedure to form a borderless contact hole |
| US7244313B1 (en) * | 2006-03-24 | 2007-07-17 | Applied Materials, Inc. | Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps |
| CN100517576C (en) * | 2006-09-30 | 2009-07-22 | 中芯国际集成电路制造(上海)有限公司 | Fabricating method for semiconductor device |
| JP5894106B2 (en) * | 2012-06-18 | 2016-03-23 | 信越化学工業株式会社 | Compound for forming resist underlayer film, resist underlayer film material using the same, resist underlayer film forming method, pattern forming method |
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Inventor after: Liu Xuanjun Inventor after: Xie Yan Inventor before: Xie Yan Inventor before: Liu Xuanjun |