CN101625966A

CN101625966A - Substrate processing method

Info

Publication number: CN101625966A
Application number: CN200910159324A
Authority: CN
Inventors: 本田昌伸; 市川裕展
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 2008-07-11
Filing date: 2009-07-13
Publication date: 2010-01-13
Also published as: JP5524362B2; JP2013070098A

Abstract

The present invention provides a substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred onto a to-be-etched layer, in a mask film or an intermediate film of a substrate to be processed. A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a side wall surface of the opening in the photoresist film using plasma produced from a deposition gas having a gas attachment coefficient S of 0.1 to 1.0 so as to reduce the opening width of the opening.

Description

Substrate processing method using same

Technical field

The present invention relates to substrate processing method using same, particularly relate to the substrate processing method using same of handling the substrate that stacks gradually process object layer, intermediate layer, mask layer.

Background technology

On silicon substrate, stack gradually the oxide-film that contains impurity, for example TEOS (Tetra Ethyl Ortho Silicate) film by formation such as CVD processing, conducting film, for example TiN film, the semiconductor device wafer of antireflection film (BARC film) and photoresist film is well-known (for example, with reference to patent documentation 1).Photoresist film forms predetermined pattern by photoetching process, when the etching of antireflection film and conducting film, plays the effect of mask.

In recent years, along with the progress of the miniaturization of semiconductor device, need form trickleer circuit pattern in above-mentioned wafer surface.In order to form above-mentioned fine circuits pattern, in the manufacture process of semiconductor device, need reduce the minimum dimension of the pattern on the photoresist film, on the etch target film, form undersized peristome (through hole or groove).

[patent documentation 1] TOHKEMY 2006-190939 communique

But, the minimum dimension restriction that the minimum dimension of the pattern on the photoresist film is subjected to can developing in the photoetching process, but owing to reasons such as focal length are inhomogeneous, the minimum dimension that can produce in batches in photoetching process is restricted.For example, the minimum dimension that can produce in batches in photoetching process is about 80nm.On the other hand, the processing dimension that satisfies semiconductor device miniaturization requirement is about 30nm.

As mentioned above, a kind of technology of expectation exploitation: the size that satisfies semiconductor device miniaturization requirement diminishes gradually, forms the peristome that size satisfies the miniaturization requirement on the etch target film.

Summary of the invention

The invention provides a kind of substrate processing method using same, on the mask film of process object substrate or intermediate coat, form the peristome that is used for the etch target film is carried out transfer printing that satisfies the size that the semiconductor device miniaturization requires.

In order to achieve the above object, in the substrate processing method using same of the treatment substrate of first aspect, this substrate has stacked gradually process object layer, intermediate layer and mask layer, the aforementioned mask layer has the peristome that the part that makes above-mentioned intermediate layer is exposed, the aforesaid substrate processing method is characterised in that: have the A/F reduction process, this A/F reduction process is, by by gas attachment coefficient S being the plasma of the deposition gas generation of S=0.1～1.0, make sediment pile arrive the above-mentioned peristome side wall surface of aforementioned mask layer, dwindle the A/F of above-mentioned peristome.

The substrate processing method using same of second aspect is characterized in that, in the substrate processing method using same of first aspect, above-mentioned deposition gas is for using general formula C _xH _yF _zThe gas of expression, wherein, x, y, z are 0 or positive integer.At this, C is that carbon, H are that hydrogen, F are fluorine.

The substrate processing method using same of the third aspect is characterized in that, in the substrate processing method using same of second aspect, above-mentioned deposition gas is CHF ₃Gas.

The substrate processing method using same of fourth aspect is characterized in that, in the substrate processing method using same of first～third aspect, in above-mentioned A/F reduction process, applies the biasing electric power of 100W～500W to aforesaid substrate.

The substrate processing method using same of the 5th aspect is characterized in that, in the substrate processing method using same of first～fourth aspect, the processing time in the above-mentioned A/F reduction process is 0.5～3 minute.

The substrate processing method using same of the 6th aspect, it is characterized in that, in the substrate processing method using same aspect first～the 5th, in above-mentioned A/F reduction process, the A/F of the above-mentioned peristome of aforementioned mask layer is converged to the corresponding setting of value with the gas attachment coefficient S of above-mentioned deposition gas.

The substrate processing method using same of the 7th aspect, it is characterized in that, in the substrate processing method using same aspect first～the 6th, in above-mentioned A/F reduction process, dwindle the A/F of the above-mentioned peristome of aforementioned mask layer, and be absorbed in A/F inhomogeneous of the peristome that forms on the aforementioned mask layer, thereby reduce deviation.

The substrate processing method using same of eight aspect, it is characterized in that, in the substrate processing method using same aspect first～the 7th, have the peristome that to dwindle the aforementioned mask layer of A/F by above-mentioned A/F reduction process and be transferred to process object layer etching step on the above-mentioned process object layer.

In order to achieve the above object, in the substrate processing method using same of the treatment substrate aspect the 9th, this substrate has stacked gradually the process object layer, intermediate layer and mask layer, the aforementioned mask layer has the peristome that the part that makes above-mentioned intermediate layer is exposed, the aforesaid substrate processing method is characterised in that: have the contraction etching step that carries out A/F reduction process and etching step with a step, wherein, above-mentioned A/F reduction process is, the plasma that generates by mist by deposition property gas and anisotropic etching gas, make sediment pile arrive the side wall surface of the above-mentioned peristome of aforementioned mask layer, above-mentioned etching step is, etching is carried out in the above-mentioned intermediate layer of the bottom that forms above-mentioned peristome.

The substrate processing method using same of the tenth aspect is characterized in that, in the substrate processing method using same aspect the 9th, above-mentioned deposition gas is for using general formula C _xH _yF _zThe gas of expression, wherein, x, y, z are 0 or positive integer.At this, C is that carbon, H are that hydrogen, F are fluorine.

The substrate processing method using same of the tenth one side is characterized in that in the substrate processing method using same aspect the tenth, above-mentioned deposition gas is CHF ₃Gas.

The substrate processing method using same of the 12 aspect, it is characterized in that, in the substrate processing method using same of the 9th～the tenth one side, above-mentioned anisotropic etching gas is the gas of molecular weight greater than above-mentioned deposition gas, be contain bromine (Br) or atomic number greater than the halogen or the periodic table of elements VIA family element of bromine (Br), be sulphur (S) or atomic number gas greater than the element of sulphur (S).

The substrate processing method using same of the 13 aspect is characterized in that, in the substrate processing method using same aspect the 12, above-mentioned anisotropic etching gas is CF ₃I gas, CF ₃Br gas, HI gas or HBr gas.

The substrate processing method using same of the 14 aspect is characterized in that, in the substrate processing method using same aspect the 9th～the 13, the above-mentioned deposition gas in the above-mentioned contraction etching step and the mixing ratio of above-mentioned anisotropic etching gas are 6: 1～1: 1.

In order to achieve the above object, in the substrate processing method using same of the treatment substrate aspect the 15, this substrate has stacked gradually the process object layer, intermediate layer and mask layer, the aforementioned mask layer has the peristome that the part that makes above-mentioned intermediate layer is exposed, the aforesaid substrate processing method is characterised in that: have the contraction etching step of implementing A/F reduction process and etching step with a step, wherein, above-mentioned A/F reduction process is, by the plasma that generates by the mist of anisotropy gas and hydrogen, make sediment pile arrive the above-mentioned peristome side wall surface of aforementioned mask layer, above-mentioned etching step is, etching is carried out in the above-mentioned intermediate layer of the bottom that forms above-mentioned peristome.

The substrate processing method using same of the 16 aspect is characterized in that, in the substrate processing method using same aspect the 15, above-mentioned anisotropic etching gas contains bromine (Br) or atomic number halogen, carbon and the fluorine greater than bromine (Br).

The substrate processing method using same of the 17 aspect is characterized in that, in the substrate processing method using same aspect the 16, above-mentioned anisotropic etching gas is CF ₃I gas or CF ₃Br gas.

The substrate processing method using same of the tenth eight aspect is characterized in that, in the substrate processing method using same aspect the 15～the 17, the above-mentioned anisotropic etching gas in the above-mentioned contraction etching step and the mixing ratio of above-mentioned hydrogen are 4: 1～2: 3.

The substrate processing method using same of the 19 aspect is characterized in that, in the substrate processing method using same of the 9th～the tenth eight aspect, in above-mentioned contraction etching step, applies the biasing electric power of 100W～500W to aforesaid substrate.

The substrate processing method using same of the 20 aspect, it is characterized in that, in the substrate processing method using same aspect the 9th～the 19, in above-mentioned contraction etching step, the cavity indoor pressure of accommodating aforesaid substrate is adjusted into 2.6Pa (20mTorr)～2 * 10Pa (150mTorr).

The substrate processing method using same of the 20 one side, it is characterized in that, in the substrate processing method using same aspect the 9th～the 20, in above-mentioned contraction etching step, etched above-mentioned intermediate layer be layered in the aforementioned mask layer the below antireflection film and contain silicon fiml, antireflection film and metal film or siliceous organic membrane.

The substrate processing method using same of the 22 aspect, it is characterized in that, in the substrate processing method using same of the 9th～the 20 one side, have process object layer etching step, its peristome in above-mentioned intermediate layer that will have with the peristome corresponding opening portion of the aforementioned mask layer that dwindles above-mentioned A/F by above-mentioned contraction etching step of this process object layer etching step is transferred on the above-mentioned process object layer.

If substrate processing method using same according to first aspect, then owing to have the A/F reduction process, by gas attachment coefficient S is the plasma of the deposition gas generation of S=0.1～1.0, make the peristome side wall surface of sediment pile to mask layer, dwindle the A/F of above-mentioned peristome, thus can form on the mask layer have size satisfy semiconductor device miniaturization requirement peristome, be used to be transferred to the patterns of openings on the etch target film.

If according to the substrate processing method using same of second aspect, then because deposition property gas is to use general formula C _xH _yF _zThe gas of (x, y, z are 0 or positive integer) expression, thus can make the peristome side wall surface of the sediment pile of the thickness corresponding to mask layer with gas attachment coefficient S, thus A/F is dwindled.

If according to the substrate processing method using same of the skill third aspect, then because deposition property gas is CHF ₃Gas so can make the side wall surface of sediment pile to the peristome of mask layer, is contracted to A/F for example about 20nm.

If according to the substrate processing method using same of fourth aspect, then owing in the A/F reduction process, apply the biasing electric power of 100W～500W to substrate, so can carry out effectively adhering to by suitable biasing electric power to the deposit of peristome side wall surface.

If according to the substrate processing method using same of the 5th aspect, then owing to the processing time in the A/F reduction process is 0.5～3 minute, so can in the shortest as far as possible processing time, dwindle the A/F of mask layer peristome.

If substrate processing method using same according to the 6th aspect, then because in the A/F reduction process, the A/F of the peristome of mask layer is converged to the corresponding setting of value with the gas attachment coefficient S of deposition property gas, so by selecting suitable deposition gas based on gas attachment coefficient S, thereby, the A/F of peristome can be adjusted to desirable A/F.

If substrate processing method using same according to the 7th aspect, then because in the A/F reduction process, dwindle the A/F of the peristome of mask layer, and be absorbed in A/F inhomogeneous of the peristome that forms on the mask layer, thereby reduce deviation, so can absorb the inhomogeneous of unquestioned A/F in the past, satisfy the requirement of semiconductor device miniaturization.

If substrate processing method using same according to eight aspect, then, be transferred on the process object layer so size can be satisfied the peristome of semiconductor device miniaturization requirement owing to have and be transferred to process object layer etching step on the process object layer with dwindle mask layer peristome behind the A/F by the A/F reduction process.

If substrate processing method using same according to the 9th aspect, then owing to have the contraction etching step of implementing two steps with a step, above-mentioned two steps are: by from the plasma of deposition property gas and the mist generation of anisotropic etching gas, make the A/F reduction process of sediment pile to the peristome side wall surface of mask layer, form the etching step in intermediate layer of the bottom of peristome with etching, thus can form in the intermediate layer have size satisfy semiconductor device miniaturization requirement peristome, be used to be transferred to the patterns of openings on the process object layer.

If according to the substrate processing method using same of the tenth aspect, then because deposition property gas is to use general formula C _xH _yF _zThe gas of (x, y, z are 0 or positive integer) expression is so the sediment pile that can make the thickness corresponding with gas attachment coefficient S dwindles A/F to the side wall surface of mask layer peristome.

If according to the substrate processing method using same of the tenth one side, then because deposition property gas is CHF ₃Gas so can make sediment pile to the side wall surface of mask layer peristome, is contracted to for example 20～25nm with A/F.

If substrate processing method using same according to the 12 aspect, then because anisotropic etching gas is the gas of molecular weight greater than deposition property gas, contain bromine (Br) or atomic number greater than the halogen or the periodic table of elements VIA family element of bromine (Br), be sulphur (S) or atomic number element greater than sulphur (S), so can make the bottom that arrives peristome from the plasma of anisotropic etching gas generation, thereby, can suppress sediment pile to the bottom, simultaneously can etching intermediate coat for example.

If according to the substrate processing method using same of the 13 aspect, then because anisotropic etching gas is CF ₃I gas, CF ₃Br gas, HI gas or HBr gas suppress sediment pile to the effect of bottom and the effect of etching intermediate coat so improve.

If substrate processing method using same according to the 14 aspect, then because the deposition gas in the contraction etching step and the mixing ratio of anisotropic etching gas are 6: 1～1: 1, so can make sediment pile to the peristome sidewall, dwindle A/F, and prevent that deposit is attached to the bottom of peristome, etches open the intermediate coat of the bottom of oral area.

If substrate processing method using same according to the 15 aspect, then owing to have the contraction etching step of implementing two steps with a step, above-mentioned two steps are: the plasma by the mist by anisotropy gas and hydrogen generates makes the A/F reduction process of sediment pile to the peristome side wall surface of mask layer; Form the etching step in intermediate layer of the bottom of peristome with etching, so sediment pile effect that the gas that generates by anisotropic etching gas and hydrogen reaction produces, with the synergy of the etching action of anisotropic etching gas, can satisfy the peristome of semiconductor device miniaturization requirement, promptly be used to be transferred to patterns of openings on the process object layer forming size on the intermediate layer.

If substrate processing method using same according to the 16 aspect, then because anisotropic etching gas contains bromine (Br) or atomic number halogen, carbon and the fluorine greater than bromine (Br), so can make the bottom that arrives peristome from the plasma of anisotropic etching gas generation, thereby, can suppress sediment pile to the bottom, but the intermediate coat for example of etching simultaneously.

If according to the substrate processing method using same of the 17 aspect, then because anisotropic etching gas is CF ₃I gas or CF ₃Br gas suppresses sediment pile to the effect of the bottom of peristome and the effect of etching intermediate coat so improve.

If substrate processing method using same according to the tenth eight aspect, then because the anisotropic etching gas in the contraction etching step and the mixing ratio of hydrogen are 4: 1～2: 3, so can adjust sediment pile to the sedimentation of peristome sidewall with etch open the effect of intermediate coat of the bottom of oral area, thereby, can dwindle A/F, and etch open the intermediate coat of the bottom of oral area.

If the substrate processing method using same above-mentioned according to the 19 aspect, then because in shrinking etching step, apply the biasing electric power of 100W～500W to substrate, so can easily obtain the effect of deposit attached to effect on the peristome side wall surface and etching bottom intermediate coat.

If substrate processing method using same according to the 20 aspect, then because in shrinking etching step, the cavity indoor pressure of accommodating substrate is adjusted into 2.6Pa (20mTorr)～2 * 10Pa (150mTorr), becomes coarse and be worn so can prevent substrate surface.

If substrate processing method using same according to the 20 one side, then because in shrinking etching step, etched intermediate layer be layered in mask layer the below antireflection film and contain silicon fiml, antireflection film and metal film or siliceous organic membrane, satisfy the peristome that the semiconductor device miniaturization requires so can on above-mentioned intermediate layer, form the size identical with mask layer.

If substrate processing method using same according to the 22 aspect, then be transferred to process object layer etching step on the above-mentioned process object layer owing to have peristome with above-mentioned intermediate layer, wherein, the peristome in above-mentioned intermediate layer is corresponding with the peristome of the aforementioned mask layer that dwindles above-mentioned A/F by above-mentioned contraction etching step, is transferred on the process object layer so size can be satisfied the peristome of semiconductor device miniaturization requirement.

Description of drawings

Fig. 1 is the plane graph of structure of roughly representing to implement the base plate processing system of the related substrate processing method using same of present embodiment.

Fig. 2 is the sectional view of the line II-II in Fig. 1.

Fig. 3 is the sectional view that roughly is illustrated in the structure of the semiconductor wafer that carries out plasma treatment in the base plate processing system of Fig. 1.

Fig. 4 is the engineering drawing of the substrate processing method using same in the expression first embodiment of the invention.

Fig. 5 is the engineering drawing of the substrate processing method using same in the expression second embodiment of the invention.

Fig. 6 is the engineering drawing of the substrate processing method using same in the expression third embodiment of the invention.

Symbol description

10 base plate processing systems

12,13,14 technical modules

50,60,70 silicon substrates

51,61,71 amorphous carbon-films (lower floor's resist film)

52,62,72SiON film

53,63,73 antireflection films

54,64,74 photoresist films

55,65,75 peristomes

56,66,76 deposits

Embodiment

Followingly embodiments of the present invention are elaborated with reference to accompanying drawing.

At first, the base plate processing system of implementing the related substrate processing method using same of embodiment of the present invention is described.This base plate processing system possesses a plurality of technical modules, and wherein, this technical module constitutes used etch processes, the ashing treatment of plasma as the semiconductor wafer Q of substrate (below, only be called " wafer Q ").

In Fig. 1, base plate processing system 10 possesses: overlook and be hexagonal shift module (transfer module) 11; Two

technical modules

12,13 that are connected with a side of this shift module 11; Two

technical modules

14,15 that are connected with another side of shift module 11 in the mode relative with 13 with these two technical modules 12; With technical module 13 adjacent and technical modules 16 that be connected with shift module 11; With technical module 15 adjacent and technical modules 17 that be connected with shift module 11; Load blocks 18 as rectangular-shaped carrying room; Be configured between shift module 11 and the load blocks 18 and link above-mentioned their two load-

lock modules

19 and 20.

Shift module 11 has and is configured in bending and stretching and rotating freely carrying arm 21 of its inside, this carrying arm 21 between technical module 12～17 and load-

lock module

19,20, conveyance wafer Q.

Technical module 12 has the process chamber container (chamber) of accommodating wafer Q, imports as the CF class deposition property gas, for example CHF that handle gas to this chamber interior ₃The mist of gas and halogen gas, for example HBr gas produces electric field in chamber interior, thereby, produce plasma from the processing gas that imports, by this plasma wafer Q is carried out etch processes.

Fig. 2 is the sectional view of the line II-II in Fig. 1.

Turbomolecular pump 25), be configured between chamber 22 and the TMP25 and control the APC as the type variable butterfly valve (the Adaptive Pressure Control) valve 26 of the pressure in the chamber 22 in Fig. 2, technical module 12 has: process chamber (chamber) 22, be configured in the mounting table 23 of the wafer Q in this chamber 22, the spray head 24 that disposes in the mode relative with mounting table 23, discharge TMP (the Turbo MolecularPump: of gas in the chamber 22 etc. above chamber 22.

First high frequency electric source 27 is connected with mounting table 23 with second adaptation 36 by first adaptation 28 respectively with second high frequency electric source 35, first high frequency electric source 27 applies High frequency power higher with the frequency of electric power as excitation, for example 60MHz to mounting table 23, and second high frequency electric source 35 applies to mounting table 23 that frequency as bias voltage is lower, the High frequency power of for example 2MHz.Thus, mounting table 23 plays the effect that processing space R between mounting table 23 and spray head 24 applies the lower electrode of High

frequency power.Adaptation

28,36 reduces the reflection of 23 pairs of High frequency power of mounting table, makes the supply rate maximum to mounting table 23 supply high frequency electric power.

Spray head 24 is made of discoideus lower floor gas supply part 29 and discoideus top tank air supply unit 30, and top tank air supply unit 30 overlaps above lower floor's gas supply part 29.Lower floor's gas supply part 29 and top tank air supply unit 30 have first surge chamber 31 and second surge chamber 32 respectively.First surge chamber 31 and second surge chamber 32 are respectively by

gas vent hole

33,34 and 22 interior connections of chamber.

First surge chamber 31 and for example CHF ₃Gas supply system (omitting diagram) connects.This CHF ₃Gas supply system is supplied with CHF to first surge chamber 31 ₃Gas.The CHF that is supplied to ₃Gas supplies in the chamber 22 by gas vent hole 33.In addition, second surge chamber 32 is connected with for example HBr gas supply system (omitting diagram).The HBr gas supply system is supplied with HBr gas to second surge chamber 32.The HBr gas that is supplied to supplies in the chamber 22 by gas vent hole 34.DC power supply 45 connects spray head 24, applies direct voltage by this DC power supply 45 to spray head 24.Thereby, the ion distribution in the direct voltage control and treatment space R that is applied in.

As mentioned above, in the chamber 22 of this technical module 12, mounting table 23 applies High frequency power to handling space R, thereby, form high-density plasma from spray head 24 to the processing gas of handling space R supply, produce ion or free radical, carry out etch processes by this ion or radical pair wafer Q.

Turn back to Fig. 1, technical module 13 has and is housed in the process chamber (chamber) that carries out the wafer Q after the etch processes in the technical module 12, imports as the O that handles gas to this chamber interior ₂And N ₂Mist, form electric field in chamber interior, thereby, produce plasma from the processing gas that imports, by this plasma wafer Q is carried out etch processes.Then, the structure of technical module 13 is identical with technical module 12, possesses O ₂Feed system and N ₂Feed system (all omitting diagram) is in order to replace for example CHF ₃Gas supply system and HBr gas supply system.Then, the etch processes of being undertaken by technical module 13 also is also used as ashing treatment.

Technical module 14 has and is housed in the process chamber (chamber) that carries out the wafer Q after the etch processes in the technical module 13, imports as the O that handles gas to this chamber interior ₂, form electric field in chamber interior, thereby, produce plasma from the processing gas that imports, by this plasma wafer Q is carried out ashing treatment.Then, the structure of technical module 14 is identical with technical module 12, possesses: only by O ₂Feed system connects the spray head (all not having diagram) of the discoideus gas supply part formation of surge chamber, in order to replace the spray head 24 that is made of discoideus lower floor gas supply part 29 and discoideus top tank air supply unit 30.

At decompression state, shift module 11 is connected with technical module 12～17 respectively by vacuum gate valve 12a～17a with shift module 11, technical module 12～17 inner sustain.

In base plate processing system 10, the internal pressure of load blocks 18 is maintained atmospheric pressure, and on the other hand, the inner sustain of shift module 11 is a vacuum.Therefore, each

load locking room

19,20 possesses

vacuum gate valve

19a, 20a at the connecting portion with shift module 11 respectively, and possess atmosphere family of power and

influence

19b, 20b at connecting portion with load blocks 18, thereby, constitute as the vacuum preparation carrying room that can adjust its internal pressure.In addition, each load-

lock module

19,20 has wafer mounting table 19c, 20c, and wherein, this wafer mounting table 19c, 20c are used for temporarily being positioned in the wafer Q of handing-over between load blocks 18 and the shift module 11.

On load blocks 18, except being connected with load-

lock module

19,20, also be connected with mounting is respectively carried out prealignment as for example three front-open wafer box mounting tables 38 of accommodating the front-open wafer box of the container of 25 pieces of wafer Q (FrontOpening Unified Pod) 37 for example, to the wafer Q position of taking out of from front-open wafer box 37 locator 39.

Load-

lock module

19,20 is connected with sidewall along the long side direction of load blocks 18, and clips load blocks 18 and the 38 relative configurations of three front-open wafer box mounting tables, and locator 39 is configured in an end of the long side direction of load blocks 18.

Load blocks 18 has: be configured in inner, the double-arm carrying arm 40 of the multi-joint type of conveyance wafer Q and be configured in three load ports 41 as the input port of wafer Q of sidewall in the mode corresponding with each front-open wafer box mounting table 38.Carrying arm 40 takes out wafer Q via the front-open wafer box 37 of load port 41 on from mounting to front-open wafer box mounting table 38, moves into the wafer Q that takes out of this taking-up to load-

lock module

19,20 or locator 39.

In addition, base plate processing system 10 possesses: at the guidance panel 42 of the end configuration of the long side direction of load blocks 18.Guidance panel 42 has the display part that is made of for example LCD (Liquid CrystalDisplay), the running-active status that respectively constitutes element of this display part display base plate treatment system 10.

Fig. 3 is the sectional view of the structure of the semiconductor wafer of enforcement plasma treatment in the base plate processing system that roughly is illustrated in Fig. 1.

In Fig. 3, wafer Q has: amorphous carbon-films as the process object layer (lower floor's resist film) 51 that form on silicon substrate 50 surface, at the SiON film that forms on the amorphous carbon-film 51 (hard mask) 52, at antireflection film (BARC film) 53 that forms on the SiON film 52 and the photoresist film 54 (mask layer) that forms on antireflection film 53.

Silicon substrate 50 is the discoideus thin plates that formed by silicon, and CVD handles by for example carrying out, and forms amorphous carbon-film 51 on the surface.Amorphous carbon-film 51 plays the effect of lower floor's resist film.Amorphous carbon-film 51 is carried out CVD processing or PVD processing etc., form SiON film 52 on the surface, handle formation antireflection film 53 on this SiON film 52 by for example coating.Antireflection film 53 is made of macromolecule resin, prevent that the ArF excimer laser that sees through photoresist film 54 from arriving photoresist film 54 once more by 52 reflections of SiON film, wherein, this macromolecule resin contain the light that absorbs certain specific wavelength, for example to the pigment of the ArF excimer laser of photoresist film 54 irradiations.Use for example spin coated device (omitting diagram), on antireflection film 53, form photoresist film 54.Photoresist film 54 is made of normal Photosensitive resin, if be subjected to the irradiation of ArF excimer laser, then goes bad into alkali-soluble.

Wafer Q for said structure, the ArF excimer laser corresponding with the pattern of upset behind the predetermined pattern is by clasfficiator (stepper) (omitting diagram) irradiation photoresist film 54, and the part by the irradiation of ArF excimer laser of photoresist film 54 goes bad and becomes to have alkali-soluble.Afterwards, the strong basicity developer solution drops onto on the photoresist film 54, and removing goes bad becomes to have the part of alkali-soluble.Thus and since from photoresist film 54 remove with the predetermined pattern that overturns after the corresponding part of pattern, therefore, on wafer Q, present the pattern of regulation, for example, forming residual photoresist film 54 on the position of through hole with peristome 55.

In order to satisfy the requirement of semiconductor device miniaturization, need form on the etch target film size little, particularly width (CD (Critical Dimension) is the peristome (through hole or groove) about 25～30nm.But, because the minimum dimension that can produce in batches by photoetching process is for for example about 80nm, so in the etch processes of wafer Q, be difficult to the peristome that on etch target film formation A/F satisfies semiconductor device miniaturization requirement.

The present inventor forms the method that A/F satisfies the peristome of above-mentioned semiconductor device miniaturization requirement in order to seek on wafer Q, and find when carrying out various test, for on silicon substrate 50, stack gradually amorphous carbon-film 51 as the process object layer, as the hard coat film layer SiON film 52, antireflection film (BARC film) 53, have the wafer Q of the photoresist film 54 of the peristome 55 that the part that makes antireflection film 53 exposes, use CF class deposition property gas (C with specific gas attachment coefficient S _xH _yF _z, at this, x, y, z be 0 or positive integer) carry out plasma treatment, thereby accumulative deposit thing on peristome 55 side wall surfaces that are arranged on the photoresist film 54 reduces (contraction) A/F.

Then, the present inventor finds out from above-mentioned discovery: suppose to exist with ... the deposition gaseous species that plasma treatment is suitable for through the A/F of the photoresist film after the shrink process, in other words, exist with ... gas attachment coefficient S and finally converge to Rack, and the A/F after the convergence satisfies the requirement of above-mentioned semiconductor device miniaturization, based on this hypothesis, kind for the deposition gas that is suitable for plasma treatment, the gas attachment coefficient, treatment conditions, the result that processing time etc. are carried out all research is the CF class deposition property gas of using gases attachment coefficient S=0.1 to 1.0, CHF for example ₃Gas carries out plasma treatment under rated condition, thereby acquisition possesses the wafer Q of photoresist film, and wherein, the peristome of this photoresist film has target A/F, for example 25nm to 30nm, reaches purpose of the present invention.

Below, the substrate processing method using same related to first embodiment of the invention is elaborated.

This substrate processing method using same based on plasma treatment owing to have: the A/F reduction process is attached on the side wall surface of peristome 55 deposit based on plasma treatment and dwindles the A/F of the peristome 55 that forms on the photoresist film 54 of wafer Q; And etching step, after dwindling A/F, the pattern transfer that will dwindle the peristome 55 behind the A/F is to as etching step on the amorphous carbon-film 51 of process object layer etc., so for example be also referred to as two step methods.

In Fig. 4, at first, prepare wafer Q, stack gradually the amorphous carbon-film 51 as lower floor's resist film, SiON film 52, antireflection film (BARC film) 53 and the photoresist film 54 of the hard mask of conduct on silicon substrate 50, photoresist film 54 has the peristome 55 (Fig. 4 (A)) that the part of antireflection film 53 is exposed by A/F, for example 60nm.Then, move into this wafer Q in the chamber 22 of technical module 12 (with reference to Fig. 2), mounting is on mounting table 23.

Then, by APC valve 26 grades the pressure in the chamber 22 is set at for example 1 * 10Pa (75mTorr).In addition, the temperature with wafer Q is set at for example 50 ℃.Then, be the CHF of 300sccm for example from lower floor's gas supply part 29 supply flow rate in chamber 22 of spray head 24 ₃Gas.In addition, supply with the biasing electric power of the excitation of 750W, and apply the direct voltage of 300V to spray head 24 with electric power, 300W to mounting table 23.At this moment, CHF ₃Gas is subjected to forming plasma to the excitation of handling the High frequency power that space R applies, produces ion or free radical (Fig. 4 (B)).The surface of above-mentioned ion or free radical and photoresist film 54 or the collision of peristome side wall surface, reaction make deposit 56 be stacked into (Fig. 4 (C)) on this part.

The thickness of deposit 56 thickening gradually when beginning to handle after beginning to handle 3 minutes, becomes for example 35nm (A/F: 25nm).By this opening reduced width step (below be called " collapse step "), the A/F of peristome 55 can be contracted to 25nm from 60nm.

At this moment, according to theoretical formula, the A/F W that derives the speed of accumulative deposit thing 56 on peristome 55 side wall surfaces and peristome 55 is proportional.That is, represent the stackeding speed of deposit on peristome 55 side wall surfaces with following theoretical formula.

[mathematical formulae 1]

GrowthRate (z) &Proportional; s \cdot \frac{\cosh (φ \cdot \frac{z}{L}) + \frac{φ \cdot W}{2 L} \sinh (φ \cdot \frac{z}{L})}{\cosh (φ) + \frac{φ \cdot W}{2 L} \sinh (φ)}

φ = L \cdot \sqrt{\frac{v_{τ}}{W} \cdot \frac{s}{D}},

D = \frac{1}{3} \cdot v_{τ} \cdot W

At this, S is that attachment coefficient, the z of gas is apart from the distance of the bottom of peristome, the width that W is opening, the height (degree of depth) that L is peristome.

Find out that from the above-mentioned theory formula stackeding speed of the deposit of piling up 56 exists with ... the width W of peristome on peristome 55 sidewalls.That is, if the gas attachment coefficient is identical, then the A/F W of peristome 55 is big more, and the stackeding speed of deposit 56 is fast more, and A/F is more little, and the stackeding speed of deposit 56 is slow more.In addition, if the gas attachment coefficient is identical, then the A/F W of peristome 55 is big more, and it is big more that deposit adheres to thickness, and A/F is more little, and it is more little that deposit adheres to thickness.Prolongation along with the processing time, the A/F of the peristome 55 behind the adventitious deposit exist with ... deposition gases kind, be gas attachment coefficient and be contracted to Rack, compare with the shrinkage of the little part of initial A/F, the shrinkage of the part that initial A/F is big is big.Therefore, in order to obtain the target A/F, it is effective using the deposition gas with the gas attachment coefficient that can obtain this A/F.

At this, deposition property gas has following effect: by using the plasma treatment of this gas, deposit 56 for example is stacked on peristome 55 side wall surfaces as the photoresist film 54 of mask layer, thereby dwindles A/F.CHF ₃The gas attachment coefficient S of gas is for example S=0.5, and the convergency value of A/F for example is 20～25nm.

Then, pass through collapse step, for the wafer Q that possesses photoresist film 54, under usual conditions, carry out etch processes, to be transferred at the peristome of formation on the photoresist film 54 on the amorphous carbon-film 51 as the process object layer, wherein, this photoresist film 54 has the peristome 55 that A/F is contracted to 25nm.

Promptly, chamber 22 internal pressures of technical module 12 that opening film 55 A/Fs that will accommodate photoresist film 54 by APC valve 26 grades are contracted to the wafer Q of 25nm are set at for example 1 * 10Pa (75mTorr), the temperature of wafer Q for example is set at after 50 ℃, is the CF of 220sccm from lower floor's gas supply part 29 supply flow rate in chamber 22 of spray head 24 ₄Gas, and be the CHF of 250sccm from top tank air supply unit 30 supply flow rate in chamber 22 ₃Gas.Then, supply with the biasing electric power of the excitation of 750W, and apply the direct voltage of 300V to spray head 24 with electric power, 0W to mounting table 23.At this moment, make CF by the High frequency power that applies to processing space R ₄Gas and CHF ₃Gas forms plasma, produces ion or free radical.The part collision, the reaction that are not covered of above-mentioned ion or free radical and antireflection film 53 by photoresist film 54, this part of the SiON film 52 of etching antireflection film 53 and lower floor thereof (Fig. 4 (D)).The antireflection film 53 of this part of etching and SiON film 52 are till exposing amorphous carbon-film 51 (Fig. 4 (E)).

As mentioned above, in the chamber 22 of technical module 12, take out of wafer Q, move into via shift module 11 in the chamber of technical module 13, mounting is on mounting table, wherein, peristome 55 A/Fs of the photoresist film 54 of this wafer Q are reduced, and antireflection film 53 and SiON film 52 are etched.

Then, by APC valve etc. the pressure in the chamber is set at 2.6Pa (20mTorr).Then, the lower floor's gas supply part supply flow rate in chamber from spray head is the O of 180sccm ₂Gas, and be the N of 20sccm from top tank air supply unit supply flow rate in chamber ₂Gas.Then, to the excitation electric power of mounting table supply 1000W, making biasing electric power is 0W.At this moment, by to handling the High frequency power that space R applies, make O ₂Gas and N ₂Gas forms plasma, generates ion or free radical.Not collided and reaction by the part of photoresist film 54, the deposit of piling up on peristome 55 side wall surfaces of this photoresist film 54 56 and

antireflection film

53 and 52 coverings of SiON film of above-mentioned ion or free radical and amorphous carbon-film 51 carried out etching (Fig. 4 (F)) to this part.The amorphous carbon-film 51 of this part is etched till exposing silicon substrate 50, and forming width on amorphous carbon-film 51 is the peristome of 25nm.At this moment, deposit 56 and the antireflection film 53 (Fig. 4 (G)) of remove photoresist film 54 simultaneously, on peristome 55 side wall surfaces of photoresist film 54 reach, piling up.

Afterwards, from the chamber of technical module 13, take out of wafer Q, finish this processing.

In this case, can in same chamber, implement following step continuously: by peristome 55 A/Fs of the photoresist film 54 that makes deposit 56 be stacked into the collapse step on peristome 55 internal faces of photoresist film 54 and will dwindle by this collapse step, promptly be transferred to A/F on antireflection film 53 and the SiON film 52 and be transferred to etching step on the amorphous carbon-film 51.

If according to present embodiment, then implement plasma treatment by the deposition gas of using gases attachment coefficient S=0.1～1.0, deposit 56 is stacked on peristome 55 side wall surfaces of photoresist film 54, can dwindle its A/F.If deposit 56 is stacked on peristome 55 side wall surfaces of photoresist film 54, the width 60nm of peristome is adjusted to for example 25nm, then based on this, can form width on as the amorphous carbon-film 51 of process object layer is the peristome of 25nm, therefore, can form size on as the amorphous carbon-film 51 of process object layer and satisfy the peristome that the semiconductor device miniaturization requires.

In the present embodiment, deposition property gas is by general formula C _xH _yF _z(x, y, z are 0 or positive integer) expression, gas attachment coefficient S=0.1～1.0 are preferably S=0.1～0.5.CHF ₃The gas attachment coefficient S of gas is about S=0.5, and the convergence A/F is for example 20～25nm.Except CHF ₃Outside the gas, deposition property gas can also use CH ₂F ₂Gas, CH ₃F gas, C ₅F ₈Gas, C ₄F ₆Gas, CF ₄Gas, CH ₄Even gas etc. by above-mentioned deposition gases, also can satisfy the requirement of equipment miniaturization in recent years, in collapse step, peristome 55 A/Fs that form can be dwindled, converge to for example 25～30nm on the photoresist film 54 of wafer Q.

In the present embodiment, the biasing electric power during preferred etch processes is 100W～500W.If biasing electric power is less than 100W, then attached to the deposit deficiency on the peristome side wall surface.On the other hand, if the biasing electric power greater than 500W, then photoresist film 54 becomes coarse because of sputter.If biasing electric power is 100W～500W, then suppress the diffusion of deposition property gas, the uniform deposit 56 of thickness is stacked on the side wall surface of peristome, can dwindle A/F.Treatment temperature is not particularly limited, is generally 20 ℃～100 ℃,, be preferably room temperature from practical standpoint.

In the present embodiment, disposing time is 0.5 minute～3 minutes.It is the fastest when the beginning etching that deposit adheres to speed, slows down gradually afterwards, is almost 0 after 3 minutes, and this is because A/F converges to Rack.Therefore, by the control and treatment time, can control deposit thickness.

In the present embodiment, can use the Si-ARC film, replace as the SiON film 52 of hard mask with by organic film formed antireflection film (BARC film) 53, wherein, this Si-ARC film has the reflection function of preventing, contains the silicon (Si) of tens % in the BARC of organic membrane.

In addition, for the wafer Q that uses in the related substrate processing method using same of present embodiment, the process object layer is an amorphous carbon-film 51, but the process object layer is not limited thereto, and also can be SiO for example ₂Film, TiN film etc.

In the present embodiment, since deposit 56 to adhere to speed fast, little at the little peristome of A/F at the big peristome of A/F, therefore, deposit is adhered to time lengthening certain hour, for example 3 minutes, A/F after then can utilizing application gas with adventitious deposit converges to the distinctive characteristic of setting, absorb the inhomogeneities of peristome 55 A/Fs of the uneven photoresist film 54 of initial etching, make A/F become even.

Then, variation is described, wherein, this variation is used for the effect that clear and definite present embodiment absorbs the A/F inhomogeneities.

In variation 1, except the peristome 55 initial openings width that make photoresist film 54 are the 65nm, under the condition identical, carry out same treatment with the condition of above-mentioned execution mode, wafer Q carried out 3 minutes plasma etch process, after beginning to handle 3 minutes, the thickness that makes deposit 56 is 38nm (A/F: 27nm).By this processing, A/F can be contracted to 27nm from 65nm.

Then, in variation 2, except the peristome 55 initial openings width that make photoresist film 54 are the 70nm, under the condition identical, carry out same treatment with the condition of above-mentioned execution mode, wafer Q carried out 3 minutes plasma etch process, after beginning to handle 3 minutes, the thickness that makes deposit 56 is 42nm (A/F: 28nm).By this processing, A/F can be contracted to 28nm from 70nm.

In present embodiment and variation 1,2, the initial openings width of the photoresist film 54 of wafer Q is respectively 60nm, 65nm and 70nm, uses CHF ₃The A/F that gas carries out the photoresist film 54 after the plasma etch process is respectively 25nm, 27nm and 28nm.Therefore, as can be seen, use CHF ₃Gas as the plasma etch process of deposition property gas except having the contractive effect that dwindles A/F, also have following effect: make inhomogeneous at first (± 5nm, average 65nm) A/F (60nm～70nm) be contracted to about target A/F, for example 27nm, and absorb each initial openings width inhomogeneities (after the processing inhomogeneous for ± 2nm).

(embodiment 1)

Use and on silicon substrate, possess the intermediate layer and have the photoresist film wafer Q of A/F as the peristome of 60nm, cavity indoor pressure is set at 1 * 10Pa (75mTorr), the temperature of wafer Q is set at 50 ℃, in chamber, supply with the CHF of the conduct deposition property gas of 300sccm ₃Gas, making biasing electric power is 300W, produce plasma, dwindle the shrink process of the peristome of photoresist film, begin to handle sediment pile thickness after 0.5 minute and be 31nm (A/F: 29nm), to begin to handle sediment pile thickness after 1 minute be 32nm (A/F: 28nm), the sediment pile thickness that begins to handle after 3 minutes is 33nm (A/F: 27nm).

From this result as can be seen, the effect that A/F obtained of dwindling the peristome of photoresist film in contraction process reached maximum in about 0.5 minute beginning to handle the back, roughly reduced in back 3 minutes beginning to handle.Therefore, the preferred process time is 0.5～3 minute.

Then, second execution mode of the present invention is elaborated.

The present inventor finds, for the A/F of the peristome that reduces on the photoresist film of wafer Q, to be provided with and implement under the situation of shrink process, not only at the side wall surface of peristome also at bottom accumulative deposit thing, the thickening because the thickness of deposits bottom being deposited in is corresponding with the thickness of deposits on being deposited in side wall surface, therefore the deposit thickness bottom being deposited in changes because of the difference of initial A/F, even and if in the deposit thickness difference of the bottom of peristome then carry out identical etch processes, also can't penetrate bottom accumulative deposit thing equally, thereby hinder uniform treatment.

Then, based on this discovery, when carrying out all research, find out, and with making sediment pile spread, etch open the bottom of oral area and suppress the anisotropic etching gas of sediment pile along the peristome transverse direction with being difficult to easily to the bottom to the deposition gas on the peristome side wall surface, implement plasma treatment, can dwindle the A/F of the peristome of photoresist film thus, and avoid the bottom of sediment pile to peristome.

In Fig. 5, at first, prepare wafer Q, stack gradually lower floor's resist film 61 of noncrystal carbon, SiON film 62, antireflection film (BARC film) 63 and the photoresist film 64 of the hard mask of conduct on silicon substrate 60, photoresist film 64 has the peristome 65 (Fig. 5 (A)) that exposes the part of antireflection film 63 with A/F, for example 60nm.Then, this wafer Q is moved in the chamber 22 of technical module 12 (with reference to Fig. 2), and mounting is on mounting table 23.

Then, by APC valve 26 grades the pressure in the chamber 22 is set at for example 2 * 10Pa (150mTorr).In addition, the temperature with wafer Q is set at for example 50 ℃.Then, be the CHF of 300sccm for example from lower floor's gas supply part 29 supply flow rate in chamber 22 of spray head 24 ₃Gas, and be the CF of 200sccm from top tank air supply unit 30 supply flow rate in chamber 22 ₃I gas.At this moment, CHF ₃Gas and CF ₃The flow-rate ratio of I gas is 3: 2.Then, supply with the high-frequency bias electric power of the high frequency pumping of 750W to mounting table 23 with electric power, 300W.In addition, apply the direct voltage of 300V to spray head 24.

At this moment, make CHF by the High frequency power that applies to processing space R ₃Gas and CF ₃I gas forms plasma, generates ion or free radical (Fig. 5 (B)).From CHF ₃The ion that generates or the surface of free radical and photoresist film 64 or the collision of peristome side wall surface, reaction make deposit 66 be stacked into this part, reduce A/F.At this moment, deposit 66 is stacked into the bottom of peristome easily.On the other hand, from CF ₃Ion that I generates or free radical are difficult to the transverse direction diffusion along peristome 65, therefore, can not collide with the deposition that is stacked on peristome 65 side wall surfaces, but move to bottom direction, with the deposit collision that is deposited in the bottom, remove this deposit, and then etching is as the antireflection film 63 and the SiON film 62 of bottom.That is, from CHF ₃Ion that generates or free radical and from CF ₃Ion that I gas generates or free radical cooperation, shrink the A/F of peristome 65, and etching photoresist film 64 and the bottom (Fig. 5 (C)) (contraction etching step) that is not stacked on the peristome that the deposit 66 of photoresist film 64 peristomes covers.

At this moment, though the diameter of peristome inlet periphery becomes big a little, but the thickness of the deposit 66 on the peristome side wall surface begins to become gradually big when beginning to handle, after beginning to handle about 0.5 minute, become 31nm (A/F: 29nm), after beginning to handle about 1 minute, become 32nm (A/F: 28nm), afterwards, gradually thickening some, after beginning to handle about 3 minutes, become 33nm (A/F: 27nm).

In addition, etching antireflection film 63 and SiON film 62, the A/F after shrinking be 27nm and expose amorphous carbon-film 61 as lower floor's resist film till, amorphous carbon-film 61 exposes.

As mentioned above, take out of that peristome 65 A/Fs are retracted and antireflection film 63 and SiON film 62 etched wafer Q in the chamber 22 of technical module 12, move into via shift module 11 in the chamber of technical module 13, below identical with above-mentioned first execution mode, with SiON film 62 as hard mask, etching method for amorphous carbon film 61, antireflection film 63 and SiON film 62 on this amorphous carbon-film 61 of etching, photoresist film 64 and the part that is not stacked on deposit 66 coverings of photoresist film 64 peristomes, and ashing photoresist film 64, be deposited in the deposit 66 on this photoresist film 64, and antireflection film 63, finish this processing.

Forming A/F on amorphous carbon-film 61 is the peristome of 27nm.In addition,, adopt other well-known method to implement etch processes, make wafer Q with target pattern size for the wafer Q that possesses amorphous carbon-film 61 with peristome 65 that A/F is retracted.

If according to present embodiment, then owing to and be used as deposition property gas and be easy to make deposit 66 to be stacked into CHF on the peristome sidewall ₃Gas and be difficult to along peristome transverse direction diffusion, suppress sediment pile to the bottom and be easy to the CF of etching bottom ₃I gas so can dwindle the A/F of the peristome 65 of photoresist film 64, satisfies the requirement of semiconductor device miniaturization in recent years, and passes through from CF ₃The plasma that I gas generates, the antireflection film 63 and the SiON film 62 of the part that can etching not be covered by photoresist film 64.That is, can be with the contraction process, etching of dwindling peristome 65 A/Fs as the etching work procedure of the antireflection film 63 in intermediate layer and SiON film 62 as a step method.Thus, improve the productivity ratio of wafer Q.

In the present embodiment, the stackeding speed that is deposited in the deposit 66 on peristome 65 side wall surfaces exists with ... the peristome width W, and the A/F W of peristome 65 is big more, and then stackeding speed is fast more, and A/F is more little, and then stackeding speed is slow more.And, the A/F of the peristome 65 behind the adventitious deposit is along with the prolongation in processing time, exist with ... deposition property gas and anisotropic etching gas mist the gas attachment coefficient and converge to Rack, therefore, gaseous species by adjust using, mixing ratio etc. can be regulated A/F.

In the present embodiment, use general formula C _xH _yF _z(x, y, z comprise 0 integer) expression deposition property gas preferably uses CHF ₃CHF ₃Gas attachment coefficient S be about S=0.5, the convergence A/F is for example 20～25nm, satisfies the requirement of equipment miniaturization in recent years.As deposition property gas, except CHF ₃Outside the gas, for example also can use CH ₂F ₂, CH ₃F, C ₅F ₈, C ₄F ₆Gas.

On the other hand, as anisotropic etching gas, preferably use CF ₃I gas.Because CF ₃The toxicity of I gas is littler than HBr gas, therefore is easy to handle.As anisotropic etching gas, can use except that CF ₃CF outside the I gas ₃Br, CF ₃At, HI, HBr gas etc.In addition, can use periodic table of elements VIA family element, be S and molecular weight element, replace the halogen in the anisotropic etching gas greater than S.The gaseous volatilization of VIA family element that contains above-mentioned halogen, the periodic table of elements is little, is difficult to the transverse direction diffusion along peristome, can not make sediment pile arrive the bottom, but etching penetrates bottom, can use with deposition property combination of gases.Then, after deliberation, the volatility of anisotropic etching gas is little, generates some binding films with the carbon reaction, the side of resist peristome 65, and by the bottom direction diffusion of ionic forces to peristome, etching intermediate coat.

In the present embodiment, the mixing ratio of preferred deposition gas and anisotropic etching gas is 6: 1～1: 1, more preferably 4: 3～3: 2.If the flow of anisotropic etching gas greater than the flow of deposition gases, then is difficult to obtain sufficient contractive effect.On the other hand, if the flow of anisotropic etching gas less than 1/6 of deposition gases flow, then the etching of antireflection film 63 and SiON film 62 is insufficient.Then, after deliberation, in the present embodiment of the mist that uses deposition property gas and anisotropic etching gas, compare with the situation of the pure gas that uses deposition property gas, the adhesion amount of deposit on the peristome side wall surface is few.

In the present embodiment, the biasing electric power during etch processes is 100W～500W.If biasing electric power is less than 100W, then the etch effect of the bottom of peristome is insufficient.On the other hand, if biasing electric power then makes photoresist film 65 become coarse by sputter greater than 500W.

In the present embodiment, the cavity indoor pressure during etch processes is 2.6Pa (20mTorr)～2 * 10Pa (150mTorr), is preferably 1 * 10Pa (75mTorr～2 * 10Pa (150mTorr).If processing pressure is low excessively, then substrate surface becomes coarse.On the other hand, if processing pressure is too high, substrate surface then weares and teares.

In the present embodiment, the temperature of the wafer Q when carrying out etch processes is not particularly limited, and is 20 ℃～100 ℃.

In the present embodiment, will be when shrinking peristome 65 A/Fs of photoresist film 64 etched intermediate layer be made as antireflection film 63 and as the SiON film 62 that contains silicon fiml, be not limited to the SiON film but contain silicon fiml, except the SiON film, can also use for example SiO ₂Film, SiN film, SiC film, SiOC film or SiCN film.In addition, the intermediate layer is not limited to antireflection film and contains silicon fiml, can use to have made up antireflection film and as for example Ti film of metal film or the film behind the TiN film or the Si-BARC film that possesses the antireflection film function add the silicon (Si) of tens % in as the BARC of organic membrane after etc.

In addition, the process object layer in the present embodiment is lower floor's resist film 61, but the process object layer is not limited thereto, and also can be SiO for example ₂Film, TiN film.

In the present embodiment, disposing time is 0.5 minute～3 minutes.If etching period is less than 0.5 minute, then be difficult to obtain sufficient etch effect, when the processing time was 3 minutes, the etching in intermediate layer was finished in contractive effect convergence, therefore, even the processing time greater than 3 minutes, also be difficult to obtain above effect.

In the present embodiment, can in same chamber, implement following step continuously: the A/F and the contraction etching step in etching intermediate layer and the etching step of etching method for amorphous carbon film 61 that dwindle peristome 65.

(embodiment 2～15) and (comparative example 1,2)

For wafer Q, use CHF with photoresist film 64, antireflection film 63 and SiON film 62 that initial A/F is 60nm ₃Gas uses CF as deposition property gas ₃I gas is as anisotropic etching gas, cavity indoor pressure, the gentle body flow-rate ratio of biasing electric power are changed, implement to shrink and intermediate layer etch processes (a step method is handled), observe the photoresist film surface that begins to handle after 1 minute and the lower floor resist layer surface after the ashing treatment.

Condition and observed result are as shown in table 1.

[table 1]

	Pressure (mT)	Biasing electric power (W)	Gas flow ratio	Observed result
	Pressure (mT)	Biasing electric power (W)	Gas flow ratio	Observed result	Embodiment 2	??20	??100	??200/50SCCM	??○
Embodiment 3	??20	??300	??150/100SCCM	??○	Embodiment 2	??20	??100	??200/50SCCM	??○
Embodiment 3	??20	??300	??150/100SCCM	??○	Embodiment 4	??20	??500	??100/100SCCM	??○
Embodiment 5	??75	??100	??150/100SCCM	??○	Embodiment 4	??20	??500	??100/100SCCM	??○
Embodiment 5	??75	??100	??150/100SCCM	??○	Embodiment 6	??75	??300	??100/100SCCM	??○
Embodiment 7	??75	??500	??200/50SCCM	??○	Embodiment 6	??75	??300	??100/100SCCM	??○
Embodiment 7	??75	??500	??200/50SCCM	??○	Embodiment 8	??150	??100	??100/100SCCM	??○
Embodiment 9	??150	??300	??200/50SCCM	??○	Embodiment 8	??150	??100	??100/100SCCM	??○
Embodiment 9	??150	??300	??200/50SCCM	??○	Embodiment 10	??150	??500	??150/100SCCM	??○
Embodiment 11	??75	??300	??210/40SCCM	??○	Embodiment 10	??150	??500	??150/100SCCM	??○
Embodiment 11	??75	??300	??210/40SCCM	??○	Embodiment 12	??10	??100	??200/50SCCM	??△
Embodiment 13	??75	??300	??200/250SCCM	??△	Embodiment 12	??10	??100	??200/50SCCM	??△
Embodiment 13	??75	??300	??200/250SCCM	??△	Embodiment 14	??75	??300	??220/30SCCM	??△
Comparative example 1	??75	??400	??0/100SCCM	??×	Embodiment 14	??75	??300	??220/30SCCM	??△
Comparative example 1	??75	??400	??0/100SCCM	??×	Comparative example 2	??75	??300	??100/0SCCM	??×
Embodiment 15	??75	??1000	??150/100SCCM	??△	Comparative example 2	??75	??300	??100/0SCCM	??×

Annotate) gas flow ratio=CHF ₃/ CF ₃I

Observed result zero expression obtains good wafer, has practicality.

Observed result △ represents there is not significant deficiency, can actually use.

Observed result * expression wafer state is bad, can not actually use.

Draw to draw a conclusion from table 1.

See that in embodiment 2～11 cavity indoor pressure is 2.6Pa (20mTorr)～2 * 10Pa (150mTorr), biasing electric power is 100W～500W, gas flow ratio (CHF ₃/ CF ₃I) be 6: 1～1: 1, contractive effect is abundant, reaches the etch effect that penetrate through reflective prevents film 63 and SiON film 62 simultaneously.In addition, in embodiment 9, the A/F of the average 60nm under the initial condition can be contracted to average 25nm.At this moment, the mean value of inhomogeneous Δ becomes 3.7nm from 13.9nm.

In embodiment 12, because cavity indoor pressure is low, thus photoresist film 64 rough surface, but can be practical.In addition, in embodiment 13, gas flow ratio is 4: 5, and contractive effect is insufficient, but can be practical.In embodiment 14, gas flow ratio is 7.3: 1, and the intermediate layer etch effect is insufficient, but can be practical.

In comparative example 1, CF ₃I gas is pure gas, can see the effect in etching intermediate layer, but can't obtain enough amounts of contraction.In addition, in comparative example 2, because independent use deposits property gas, is CHF ₃Therefore gas, can obtain contractive effect as handling gas, but deposit is attached to the bottom of peristome, and the intermediate layer can't be penetrated.

In embodiment 15, biasing electric power is too high, the surface of wearing and tearing photoresist film 64, but can manage to carry out practicality.

(embodiment 16)

Deposition property gas is CHF ₃Gas, anisotropic etching gas are CF ₃I, flow-rate ratio CHF ₃/ CF ₃I=4: 1, cavity indoor pressure is 2 * 10Pa (150mTorr), biasing electric power is 750+300W, chip temperature is 60 ℃, for having the initial openings width is that the wafer Q of the photoresist film 64 of 75nm carries out a step method and handles, observation begins to test the etching state of amount of contraction after back 30 seconds, 60 seconds, 90 seconds, 120 seconds, 150 seconds, 180 seconds and 300 seconds and antireflection film 63, SiON film 62, begin the test back after 30～90 seconds, when penetrate through reflective prevents film 63, deposit (polymer) constantly is stacked on the sidewall, and thickness increases gradually.In addition,, constantly further shrink up to beginning the test back after 90～120 seconds, and beginning etching SiON film 62.Afterwards, begin the test back after 120～180 seconds, penetrate SiON film 62 fully, reduce amount of contraction.

From this result as can be seen, the preferred process time is 0.5～3.0 minute.

Then, the third embodiment of the invention as the variation of second execution mode is described.In the 3rd execution mode, implement following step with 1 step (contraction etching step): the mist that uses anisotropic etching gas and hydrogen is as handling gas, make sediment pile to peristome 75 side wall surfaces of photoresist film 74 the A/F reduction process and etching as the antireflection film 73 in the intermediate layer that forms peristome 75 bottoms and the etching step of SiON film 72.

Fig. 6 is the engineering drawing of the substrate processing method using same of expression third embodiment of the invention.

In Fig. 6, at first, prepare wafer Q, stack gradually lower floor's resist film 71 of noncrystal carbon, SiON film 72, antireflection film (BARC film) 73 and the photoresist film 74 of the hard mask of conduct on silicon substrate 70, photoresist film 74 has the peristome 75 (Fig. 6 (A)) that exposes the part of antireflection film 73 with A/F, for example 60nm.Then, move into this wafer Q in the chamber 22 of technical module 12 (with reference to Fig. 2), mounting is on mounting table 23.

Then, by APC valve 26 grades the pressure in the chamber 22 is set at for example 1 * 10Pa (75mTorr).In addition, the temperature with wafer Q is set at for example 40 ℃.Then, be the CF of 150sccm from top tank air supply unit 30 supply flow rate in chamber 22 ₃I gas, and be the H of 100sccm from lower floor's gas supply part 29 supply flow rate in chamber 22 of spray head 24 ₂Gas.At this moment, CF ₃I gas and H ₂The flow-rate ratio of gas is 3: 2.Then, supply with the high-frequency bias electric power of the high frequency pumping of 750W to mounting table 23 with electric power, 300W.In addition, apply the direct voltage of 50V to spray head 24.

At this moment, CF ₃The part of I gas and H ₂Gas reacts, CF ₃F composition in the I gas forms HF and is drawn CF ₃The part of I gas reduces the F composition relatively, works as deposition gases.That is,, make CF by to handling the High frequency power that space R applies ₃I gas and H ₂The gas that gas reaction generates (below, be called " CF ₃IH ₂Reaction generates gas ") and unreacted CF ₃I gas forms plasma, generates ion or free radical (Fig. 6 (B)).From CF ₃IH ₂Reaction generates the ion of gas generation or the surface or the peristome side wall surface of free radical and photoresist film 74 collides, reacts, and makes deposit 76 be deposited in this part, dwindles A/F.At this moment, deposit 76 is deposited in the bottom of peristome easily.On the other hand, from unreacted CF ₃Ion that I gas generates or free radical are difficult to the transverse direction diffusion along peristome 75, only etch open the periphery of oral area 75, form coniform wall, and move to peristome 75 bottom direction, with the deposition collision that is stacked into the bottom, removing this deposit, in addition, etching bottom, is antireflection film 73 and SiON film 72.As mentioned above, from CF ₃IH ₂Reaction generate ion that gas generates or free radical, with from unreacted CF ₃Ion that I gas generates or free radical cooperation, shrink the A/F of peristome 75, and etching photoresist film 74 and the antireflection film 73 and the SiON film 72 (Fig. 6 (C)) that are not stacked on the bottom of the peristome that the deposit 76 on the photoresist film 74 covers.

At this moment, the thickness of the deposit 76 on the peristome side wall surface begins thickening gradually from beginning to handle, and after beginning to handle back 150 seconds, both sides amount to 29nm (A/F: 31nm).In addition, etching antireflection film 73 and SiON film 72, up to the amorphous carbon-film 71 that exposes with the A/F 31nm after being retracted as lower floor's resist film, the A/F of amorphous carbon-film 71 corresponding peristomes 75 exposes.

As mentioned above, in the chamber 22 of technical module 12, take out of peristome 75 A/Fs reduced and antireflection film 73 and SiON film 72 etched wafer Q, move into via shift module 11 in the chamber of technical module 13, identical with above-mentioned second execution mode below, with SiON film 72 as hard mask, etching method for amorphous carbon film 71, antireflection film 73 and SiON film 72 on this amorphous carbon-film 71 of etching, photoresist film 74 and the part that is not stacked on deposit 76 coverings of photoresist film 74 peristomes, and carry out ashing treatment, finish this processing.

On amorphous carbon-film 71, form A/F 31nm corresponding opening portion with peristome 75.In addition, for the wafer Q that possesses amorphous carbon-film 71, adopt other well-known method to implement etch processes, make the wafer Q with target pattern size, wherein, this amorphous carbon-film 71 has the peristome 75 that A/F is retracted.

If according to present embodiment, the contraction process, etching that then will dwindle peristome 75 A/Fs as the etching work procedure of the antireflection film 73 in intermediate layer and SiON film 72 as a step method (contraction etching step), thereby, identical with above-mentioned second execution mode, can satisfy the requirement of semiconductor device miniaturization in recent years, and improve the productivity ratio of wafer Q.

If according to present embodiment, then owing to using anisotropic etching gas, being CF ₃I gas and H ₂The mist of gas makes its flow-rate ratio CF as handling gas ₃I: H ₂Be 3: 2, therefore, CF ₃The part of I gas and H ₂Gas reaction becomes CF ₃The a part of F of I gas forms HF and by the CF after drawing ₃IH ₂Reaction generates gas.CF ₃IH ₂Reaction generates gas and CF ₃I gas is compared, and the F components in proportions reduces relatively, and the C components in proportions increases relatively, works as deposition property gas.That is CF, ₃I gas is anisotropic etching gas, because the F components in proportions is big, therefore, can't find deposition property, but by adding H therein ₂Gas makes the F composition form HF and is drawn, thereby the C composition increases relatively, therefore, can find the sediment pile function.As mentioned above, be easy to make deposit 76 to be deposited in the CF of peristome sidewall by also using ₃IH ₂React generation gas and be difficult to and spread but the unreacted CF of inhibition sediment pile also easy etching bottom to the bottom along the transverse direction of peristome ₃I gas, the contraction process of dwindling peristome 75 A/Fs; Can be used as a step method (contraction etching step) with etching as the etching work procedure of the antireflection film 73 of intermediate coat and SiON film 72 carries out.In addition, by making CF ₃I gas and H ₂Gas reaction, and from CF ₃The HF gas that generates when drawing the F composition in the I gas goes out of use outside system, therefore, can not produce the problem on the component parts that is attached in the chamber.

In the present embodiment, anisotropic etching gas comprises bromine (Br) or atomic number halogen, carbon and the fluorine greater than bromine (Br), wherein, uses CF ₃I gas or CF ₃Br gas is desirable.With the CHF that uses in the prior art ₃Gas/CF ₄Gas is compared, CF ₃I gas, CF ₃Br gas/H ₂(GWP:Global Warming Potential) is little for the global warming coefficient of gas.Thereby, according to present embodiment, with use CHF ₃Gas and CF ₄The mist of gas is compared as the prior art of handling gas, can reduce carrying capacity of environment significantly.

In the present embodiment, preferred anisotropic etching gas and H ₂The mixing ratio of gas is 4: 1～2: 3, more preferably 2: 1～4: 3.If H ₂Gas flow then plays the CF of deposition gases effect less than 1/4 of the anisotropic etching gas flow ₃IH ₂Reaction generates the gas deficiency, is difficult to obtain sufficient contractive effect.On the other hand, if H ₂Gas flow is greater than 3/2 of the anisotropic etching gas flow, then not with H ₂The unreacted anisotropic etching gas flow deficiency of gas reaction, the etching of antireflection film 73 and SiON film 72 becomes insufficient.In addition, think anisotropic etching gas and H ₂The optimum mixture ratio of gas exists with ... processing pressure etc.

Biasing electric power when in the present embodiment, carrying out etch processes is 100W～500W.If biasing electric power is less than 100W, then the etch effect of the bottom of peristome is insufficient.On the other hand, if biasing electric power then becomes coarse owing to sputter makes photoresist film 65 greater than 500W.

In the present embodiment, the cavity indoor pressure during etch processes is 2.6Pa (20mTorr)～2 * 10Pa (150mTorr), is preferably 1 * 10Pa (75mTorr)～2 * 10Pa (150mTorr).If processing pressure is low excessively, then make substrate surface become coarse.On the other hand, if processing pressure is too high, substrate surface then weares and teares.In addition, the temperature of the wafer Q during to etch processes is not particularly limited, and is for example 20～100 ℃.

In the present embodiment, the intermediate layer is made as antireflection film 73 and, but except the SiON film, contains silicon fiml and also can be for example SiO as the SiON film 72 that contains silicon fiml ₂Film, SiN film, SiC film, SiOC film or SiCN film.In addition, the intermediate layer is not limited to antireflection film and contain silicon fiml, can be following film also: made up antireflection film and as for example Ti film or the film behind the TiN film of metal film or added the Si-ARC film that possesses the antireflection film function etc. of the silicon (Si) of tens % in the BARC as organic membrane.

In addition, the process object layer in the present embodiment is lower floor's resist film 71, but the process object layer is not limited thereto, and also can be SiO for example ₂Film, TiN film.

In the present embodiment, disposing time is 0.5～3 minute.If etching period is less than 0.5 minute, then be difficult to obtain sufficient contractive effect, when the processing time is 3 minutes, shrink convergence, finish the etching in intermediate layer, therefore, though the processing time greater than 3 minutes, also be difficult to obtain the effect on this.

In the present embodiment, can in same chamber, implement following step continuously: the A/F and the contraction etching step in etching intermediate layer and the etching step of etching method for amorphous carbon film 71 that dwindle peristome 75.

(in the enforcement 17～19) and (comparative example 3～7)

For wafer Q, use CF with photoresist film 74, antireflection film 73 and SiON film 72 that initial A/F is 60nm ₃I gas and H ₂The mist of gas makes cavity indoor pressure, biasing electric power, gas flow ratio and processing time change respectively as processing gas, implements to shrink etch processes, photoresist film surface after observation is handled and the lower floor resist layer surface after the ashing treatment.

Condition and observed result are as shown in table 2.

[table 2]

Observed result zero expression obtains good wafer, has practicality.

Observed result * expression wafer state is bad, can not actually use.

Draw to draw a conclusion from table 2.

Can find out from embodiment 17～19, anisotropic etching gas, be CF ₃I gas and H ₂The flow-rate ratio of gas is 4: 1～2: 3, cavity indoor pressure is 1 * 10Pa (75mTorr), biasing electric power is 300W, and, processing time is respectively 60,120 and 150sec, because each condition is all within the scope of the invention, thus sufficient contractive effect can be obtained, and the acquisition penetrate through reflective prevents the etch effect in the intermediate layer of film 73 and SiON film 72.In addition, in embodiment 18, the A/F of the peristome 75 of the average 60nm under the initial condition can be contracted to average 31nm, make the inhomogeneous of aperture become minimum.

In comparative example 3, CF ₃I gas is pure gas, can see the effect in etching intermediate layer, but owing to be not predetermined process gas of the present invention, therefore, can't obtain enough amounts of contraction.In addition, in comparative example 4, use CF separately as anisotropic etching gas ₄Gas can penetrate the intermediate layer as handling gas, but owing to be not predetermined process gas of the present invention, therefore, can't bring into play contractive effect.

Ratio than 5～7 in, though use CF ₄Gas and CHF ₃Gas is as handling gas, along with increasing CHF ₃Gas flow is with respect to CF ₄The ratio of gas flow and produce contractive effect, still, because above-mentioned gas is not a processing gas given to this invention, therefore, the top shape of peristome becomes coarse, and the inhomogeneous change in aperture is big, is unable to undergo actual use.

In the respective embodiments described above, the substrate of implementing plasma treatment is not limited to the semiconductor device wafer, also can be the various substrates, photomask, CD substrate, printed base plate etc. of use in the FPD that comprises LCD (Liquid Crystal Display) (Flat Panel Display) etc.

In addition, provide storage medium to system or device, program stored coding in storage medium is read and carried out to the computer of this system or device (perhaps CPU, MPU etc.), wherein, this storage medium stores has the program coding of the software of the function that realizes the respective embodiments described above, thereby can reach purpose of the present invention.

At this moment, the program coding of reading from storage medium itself is realized the function of the respective embodiments described above, and this program coding and the storage medium that stores this program coding constitute the present invention.

In addition, as the storage medium that is used to supply with program coding, can use for example floppy disk (registered trade mark), hard disk, photomagneto disk, CDs such as CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW, tape, Nonvolatile memory card, ROM etc.In addition, also can pass through the network download program coding.

In addition, also comprise following situation: by carrying out the program coding of reading by computer, not only can realize the function of the respective embodiments described above, can also be based on the indication of this program coding, by the OS of operation on computers (operating system: operating system) wait and to carry out part or all of actual treatment, handle the function of realization the respective embodiments described above by this.

In addition, also comprise following situation: the program coding write memory that will read from storage medium, wherein, this memory is located at the function expansion card of insertion computer or connects on the function expansion unit of computer, afterwards, based on the indication of this program coding, the CPU etc. that possesses this extended function in expansion card or expansion unit carries out part or all of actual treatment, handles the function that realizes the respective embodiments described above by this.

Claims

1. the substrate processing method using same of a treatment substrate, this substrate has stacked gradually process object layer, intermediate layer and mask layer, and described mask layer has the peristome that the part that makes described intermediate layer is exposed, and described substrate processing method using same is characterised in that:

Has the A/F reduction process, this A/F reduction process is, by being the plasma that the deposition gas of S=0.1～1.0 generates by gas attachment coefficient S, make sediment pile arrive the described peristome side wall surface of described mask layer, dwindle the A/F of described peristome.

2. substrate processing method using same as claimed in claim 1 is characterized in that:

Described deposition gas is for using general formula C _xH _yF _zThe gas of expression, wherein, x, y, z are 0 or positive integer.

3. substrate processing method using same as claimed in claim 2 is characterized in that:

Described deposition gas is CHF ₃Gas.

4. as each described substrate processing method using same in the claim 1～3, it is characterized in that:

In described A/F reduction process, apply the biasing electric power of 100W～500W to described substrate.

5. as each described substrate processing method using same in the claim 1～3, it is characterized in that:

Processing time in the described A/F reduction process is 0.5～3 minute.

6. as each described substrate processing method using same in the claim 1～3, it is characterized in that:

In described A/F reduction process, the A/F of the described peristome of described mask layer is converged to the corresponding setting of value with the gas attachment coefficient S of described deposition gas.

7. as each described substrate processing method using same in the claim 1～3, it is characterized in that:

In described A/F reduction process, dwindle the A/F of the described peristome of described mask layer, and be absorbed in A/F inhomogeneous of the peristome that forms on the described mask layer, thereby reduce deviation.

8. as each described substrate processing method using same in the claim 1～3, it is characterized in that:

Have the process object layer etching step that will be transferred to by the peristome that described A/F reduction process is dwindled the described mask layer of A/F on the described process object layer.

9. the substrate processing method using same of a treatment substrate, this substrate has stacked gradually process object layer, intermediate layer and mask layer, and described mask layer has the peristome that the part that makes described intermediate layer is exposed, and described substrate processing method using same is characterised in that:

Has the contraction etching step that carries out A/F reduction process and etching step with a step, wherein, described A/F reduction process is, the plasma that generates by mist by deposition property gas and anisotropic etching gas, make sediment pile arrive the side wall surface of the described peristome of described mask layer, described etching step is, etching is carried out in the described intermediate layer of the bottom that forms described peristome.

10. substrate processing method using same as claimed in claim 9 is characterized in that:

11. substrate processing method using same as claimed in claim 10 is characterized in that:

Described deposition gas is CHF ₃Gas.

12., it is characterized in that as each described substrate processing method using same in the claim 9～11:

Described anisotropic etching gas is the gas of molecular weight greater than described deposition gas, be contain bromine (Br) or atomic number greater than the halogen or the periodic table of elements VIA family element of bromine (Br), be sulphur (S) or atomic number gas greater than the element of sulphur (S).

13. substrate processing method using same as claimed in claim 12 is characterized in that:

Described anisotropic etching gas is CF ₃I gas, CF ₃Br gas, HI gas or HBr gas.

14., it is characterized in that as each described substrate processing method using same in the claim 9～11:

The described deposition gas in the described contraction etching step and the mixing ratio of described anisotropic etching gas are 6: 1～1: 1.

15. the substrate processing method using same of a treatment substrate, this substrate has stacked gradually process object layer, intermediate layer and mask layer, and described mask layer has the peristome that the part that makes described intermediate layer is exposed, and described substrate processing method using same is characterised in that:

Has the contraction etching step of implementing A/F reduction process and etching step with a step, wherein, described A/F reduction process is, by the plasma that generates by the mist of anisotropy gas and hydrogen, make sediment pile arrive the described peristome side wall surface of described mask layer, described etching step is, etching is carried out in the described intermediate layer of the bottom that forms described peristome.

16. substrate processing method using same as claimed in claim 15 is characterized in that:

Described anisotropic etching gas contains bromine (Br) or atomic number halogen, carbon and the fluorine greater than bromine (Br).

17. substrate processing method using same as claimed in claim 16 is characterized in that:

Described anisotropic etching gas is CF ₃I gas or CF ₃Br gas.

18., it is characterized in that as each described substrate processing method using same in the claim 15～17:

The described anisotropic etching gas in the described contraction etching step and the mixing ratio of described hydrogen are 4: 1～2: 3.

19., it is characterized in that as claim 9 or 15 described substrate processing method using sames:

In described contraction etching step, apply the biasing electric power of 100W～500W to described substrate.

20., it is characterized in that as claim 9 or 15 described substrate processing method using sames:

In described contraction etching step, the cavity indoor pressure of accommodating described substrate is adjusted into 2.6Pa (20mTorr)～2 * 10Pa (150mTorr).

21., it is characterized in that as claim 9 or 15 described substrate processing method using sames:

In described contraction etching step, etched described intermediate layer be layered in described mask layer the below antireflection film and contain silicon fiml, antireflection film and metal film or siliceous organic membrane.

22., it is characterized in that as claim 9 or 15 described substrate processing method using sames:

Have peristome with described intermediate layer and be transferred to process object layer etching step on the described process object layer, wherein, the peristome in described intermediate layer is corresponding with the peristome of the described mask layer that dwindles described A/F by described contraction etching step.