CN111524785B - Processing method of dry etching cavity - Google Patents

Processing method of dry etching cavity Download PDF

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Publication number
CN111524785B
CN111524785B CN202010495406.7A CN202010495406A CN111524785B CN 111524785 B CN111524785 B CN 111524785B CN 202010495406 A CN202010495406 A CN 202010495406A CN 111524785 B CN111524785 B CN 111524785B
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polymer
etching
cavity
sulfur
etching process
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CN111524785A (en
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吴堃
杨猛
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Shanghai Bangxin Semiconductor Technology Co ltd
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Shanghai Bangxin Semiconductor Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

A processing method of a dry etching cavity comprises the following steps: providing an etching cavity; respectively carrying out a witness etching process on a plurality of wafers by adopting the etching cavity, wherein the witness etching process forms a first high polymer on the cavity wall of the etching cavity; and in the process interval of carrying out the evidence etching process on at least part of the wafer, forming a second polymer on the cavity wall of the etching cavity, wherein the adhesion coefficient of the second polymer is larger than that of the first polymer. The method can prolong the run production cycle of the dry etching cavity and improve the average production efficiency.

Description

Processing method of dry etching cavity
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a processing method of a dry etching cavity.
Background
The etching process is an important patterning process in the wafer production process, and is used for forming a required pattern on the surface of the wafer. The dry etching process is one of etching processes and is carried out in a dry etching cavity.
With the development of semiconductor technology, the requirements for the stability of the etching process, including the feature size and the etching morphology, are higher and higher. And along with the continuous reduction of process nodes, the requirement on the cleanliness inside the dry etching cavity is higher, so that the wafer is prevented from being polluted by particles.
However, in the process of performing the dry etching process in the conventional dry etching chamber, the dry etching chamber needs to be cleaned in time, the period of the average run product is short, and the average production efficiency is low.
Disclosure of Invention
The invention aims to provide a processing method of a dry etching cavity, so as to prolong the run production cycle of the dry etching cavity and improve the average production efficiency.
In order to solve the technical problem, the invention provides a processing method of a dry etching cavity, which comprises the following steps: providing an etching cavity; respectively carrying out the witness etching process on the plurality of wafers by adopting the etching cavity, wherein the witness etching process forms a first high polymer on the cavity wall of the etching cavity; and forming a second polymer on the wall of the etching cavity in the process interval of carrying out the proof etching process on at least part of the wafer, wherein the adhesion coefficient of the second polymer is larger than that of the first polymer.
Optionally, the second polymer has an adhesion coefficient from 2 to 10 times that of the first polymer.
Optionally, the etching cavity is a plasma dry etching cavity, and the verification etching process is a plasma dry etching process.
Optionally, the etching gas used in the etching process of this document includes a fluorocarbon-based gas, and the fluorocarbon-based gas does not include a sulfur element; the first high polymer is fluorocarbon high polymer, and the first high polymer does not comprise sulfur element.
Optionally, the method of forming the second polymer comprises: introducing reaction gas into the etching cavity; and exciting the plasma discharge of the reaction gas to form a second polymer on the wall of the etching cavity.
Optionally, the second polymer is a sulfur-containing polymer.
Optionally, the reaction gas comprises COS and SO 2 、H 2 S and CS 2 Or a combination of any of them.
Optionally, the reaction gas further comprises Ar and N 2 Either one or both.
Optionally, the reaction gas comprises COS and N 2 In the process of exciting the reaction gas plasma to discharge, the adopted chamber pressure is 50mtorr to 500mtorr, the adopted source radio frequency power is 300-1500 watts, the flow rate of COS is 20sccm to 200sccm, and N is higher than N 2 The flow rate is 100sccm to 1000sccm.
Optionally, the second polymer is a mixed polymer, the second polymer includes a first sub-polymer and a second sub-polymer, the first sub-polymer is a fluorocarbon high polymer and does not include a sulfur element, and the second sub-polymer is a sulfur-containing polymer.
Optionally, in each step of forming the second polymer, the thickness of the second polymer is 100 nm to 1 μm.
Optionally, the method further includes: before and after the self-certified etching process is respectively carried out on a plurality of wafers, cleaning and maintaining the etching cavity, wherein the cleaning and maintaining comprises the following steps: removing substances attached to the wall of the etching cavity; and after removing substances attached to the wall of the etching cavity, depositing an initial polymer on the wall of the etching cavity.
Optionally, the initial polymer is a fluorocarbon polymer and is sulfur-free.
Optionally, the initial polymer is a sulfur-containing polymer.
Optionally, the initial polymer includes a first initial sub-polymer and a second initial sub-polymer, the first initial sub-polymer is a fluorocarbon polymer and does not contain sulfur, and the second initial sub-polymer is a sulfur-containing polymer.
Compared with the prior art, the technical scheme of the invention has the following advantages:
in the processing method of the dry etching cavity provided by the technical scheme of the invention, the evidence etching process is used for patterning the surface of the wafer. The method comprises the following steps of respectively carrying out the evidence etching process on a plurality of wafers, wherein the evidence etching process forms a first high polymer on the wall of the etching cavity, and the first high polymer is a byproduct in the etching process and can ensure the stability of the chemical environment in the etching cavity in the evidence etching process. In the process interval of carrying out the evidence etching process on at least part of the wafer, a second polymer is formed on the cavity wall of the etching cavity, and the adhesion coefficient of the second polymer is larger than that of the first polymer, so that the second polymer can cover the surface of the first polymer generated by the previous evidence etching process, and the adhesion between the second polymer and the cavity wall surface of the etching cavity is stronger, thereby avoiding the first polymer from falling off in the subsequent evidence etching process and avoiding particle pollution to the wafer surface. Therefore, the self-evidence etching process can be carried out for a plurality of times before two adjacent cleaning and maintenance processes are carried out on the etching cavity. On the basis, the run production cycle of the dry etching cavity can be prolonged, and the average production efficiency is improved.
Drawings
FIG. 1 is a flow chart of a method of processing a dry etch chamber in an embodiment of the invention;
fig. 2 to 9 are schematic structural diagrams of a process of the dry etching chamber in an embodiment of the present invention.
Detailed Description
As described in the background, the dry etching chamber formed by the prior art has low production efficiency.
A dry etching process, comprising: providing a dry etching cavity; and placing the wafer in the dry etching cavity, and then carrying out an etching process on the plurality of wafers to form patterns on the surfaces of the wafers.
Generally, before a plurality of wafers are etched, the inner wall of the etching chamber is cleaned and maintained, and a protective layer is formed on the inner wall of the etching chamber during the cleaning and maintaining, wherein the protective layer is used for improving the stability of the chemical environment of the etching chamber. In the process of etching the wafer, a high polymer is deposited on the inner wall of the etching cavity, and the high polymer is a fluorocarbon high polymer because the gas adopted by etching is generally a fluorocarbon-based gas. With the increase of the number of the etched wafers, the thickness of the high polymer on the inner wall of the etching cavity is increased, so that the stress between the high polymer and the inner wall of the etching cavity is increased, and the phenomenon of polymer peeling is easily caused. If the wafer is etched continuously, particle contamination is caused on the surface of the wafer.
Secondly, if too much polymer is peeled off and falls on the electrostatic chuck holding the wafer, the wafer holding effect of the electrostatic chuck is deteriorated.
In summary, the etching chamber needs to be cleaned and maintained in time within a certain period of time, so as to avoid particle contamination to the surface of the wafer during the etching process of the wafer. However, the time required for one cleaning and maintenance of the etching chamber is long, which results in a reduction in the cycle time of run products and a reduction in the average production efficiency.
In order to solve the above problem, the present invention provides a processing method of a dry etching chamber, please refer to fig. 1, which includes the following steps:
s01, providing an etching cavity;
s02, adopting the etching cavity to respectively perform a witness etching process on the plurality of wafers, wherein the witness etching process forms a first high polymer on the cavity wall of the etching cavity;
and S03, forming a second polymer on the wall of the etching cavity in the process interval of carrying out the proof etching process on at least part of the wafer, wherein the adhesion coefficient of the second polymer is larger than that of the first polymer.
The method can prolong the run production cycle of the dry etching cavity and improve the average production efficiency.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 2 to 9 are schematic structural diagrams illustrating a semiconductor device forming process according to an embodiment of the present invention.
Referring to fig. 2, an etch chamber 100 is provided.
The etching chamber 100 is used for etching a wafer to form a desired pattern on a surface of the wafer.
In this embodiment, the etching chamber 100 is a plasma dry etching chamber.
Then, respectively carrying out a witness etching process on the plurality of wafers by using the etching chamber 100, wherein the witness etching process forms a first high polymer on the chamber wall of the etching chamber; and forming a second polymer on the wall of the etching cavity in the process interval of carrying out the proof etching process on at least part of the wafer, wherein the adhesion coefficient of the second polymer is larger than that of the first polymer.
In the embodiment, the evidence etching process is sequentially carried out on N wafers; after sequentially carrying out the evidence etching process on the N wafers, forming a second polymer on the wall of the etching cavity; then, sequentially carrying out the intrinsic etching process on the M wafers; then, forming a second polymer on the wall of the etching cavity; then, the Q wafer is sequentially subjected to the evidence-based etching process, and then the etching cavity is cleaned and maintained.
In this embodiment, the method further includes: before the plurality of wafers are respectively subjected to the evidence-based etching process, the etching cavity is cleaned and maintained, namely, before the plurality of wafers are sequentially subjected to the evidence-based etching process, the etching cavity is cleaned and maintained.
In this embodiment, two deposition steps for forming the second polymer are performed between two adjacent cleaning and maintenance steps for the etching chamber. In other embodiments, the step of forming the second polymer may be performed once, three times or more than three times between two adjacent times of cleaning and maintaining the etching chamber.
Referring to fig. 3, the etching chamber 100 is cleaned and maintained.
The cleaning and maintenance comprises the following steps: removing substances attached to the wall of the etching chamber 100; after removing the substances attached to the walls of the etching chamber 100, an initial polymer 110 is deposited on the walls of the etching chamber.
In one embodiment, the initial polymer 110 is a fluorocarbon polymer and is sulfur-free.
In another embodiment, the initial polymer 110 is a sulfur-containing polymer.
The method of forming the initial polymer 110 includes: introducing reaction gas into the etching chamber 110; the reactive gas plasma discharge is excited to form an initial polymer 110 on the walls of the etch chamber.
When the starting polymer 110 is a fluorocarbon high polymer and does not contain sulfur, the reaction gas is a fluorocarbon-based gas (CxFy or CxFyHz) during the formation of the starting polymer 110.
When the initial polymer 110 is a sulfur-containing polymer, the reaction gas includes COS and SO during the formation of the initial polymer 110 2 、H 2 S and CS 2 One or a combination of any of them. The reaction gas further comprises Ar and N 2 Either one or both.
Specifically, in one instance, the reaction gas includes COS and N during the formation of the initial polymer 110 2 In the process of exciting the reaction gas plasma to discharge, the adopted chamber pressure is 50mtorr to 500mtorr, the adopted source radio frequency power is 300-1500 watts, the flow rate of COS is 20sccm to 200sccm, and N is higher than N 2 The flow rate is 100sccm to 1000sccm.
In another embodiment, the initial polymer 110 includes a first initial sub-polymer that is a fluorocarbon polymer and does not contain sulfur and a second initial sub-polymer that is a sulfur-containing polymer.
Referring to fig. 4, the witness etching process is sequentially performed on N wafers.
The said etching process is plasma dry etching process.
And in the process of sequentially carrying out the intrinsic etching process on the N wafers, depositing a first high polymer 120 on the wall of the etching cavity.
In the process of sequentially carrying out the etching process of the certificate on N wafers, the etching gas adopted by the certificate etching process comprises fluorocarbon-based gas, and the fluorocarbon-based gas does not comprise sulfur element.
The sulfur element is not contained in the process of carrying out the evidence etching process, so that the adverse effect on the etching morphology of the wafer is avoided.
The first polymer 120 is a fluorocarbon polymer, and the first polymer 120 does not include sulfur.
In this embodiment, N is an integer of 2 or more.
Referring to fig. 5, after the proof etching process is sequentially performed on N wafers, a second polymer 130 is formed on the wall of the etching chamber 100, and the adhesion coefficient of the second polymer 130 is greater than that of the first polymer 120.
In one embodiment, the second polymer 130 has an adhesion coefficient from 2 times to 10 times that of the first polymer.
If the second polymer 130 has an adhesion coefficient less than 2 times that of the first polymer, the second polymer 130 does not have a significant effect on run cycle extension; if the adhesion coefficient of the second polymer 130 is more than 10 times the adhesion coefficient of the first polymer, the process requirements are high.
Of course, the adhesion coefficient of the present embodiment to the second polymer 130 can also be selected to be greater than 10 times the adhesion coefficient of the first polymer.
The method of forming the second polymer 130 comprises: introducing reaction gas into the etching cavity 100; the reactive gas plasma discharge is excited to form a second polymer 130 on the walls of the etch chamber.
The second polymer 130 is a sulfur-containing polymer.
In the process of forming the second polymer 130, the reaction gas includes COS, SO 2 、H 2 S and CS 2 The reaction gas can also comprise Ar and N 2 Either one or both.
In one embodiment, the reaction gas includes COS and N during the formation of the second polymer 130 2 In the process of exciting the reaction gas plasma discharge, the pressure of a cavity is 50mtorr to 500mtorr, such as 100torr, 200torr, 300torr or 400torr, the source radio frequency power is 300to 1500 watts, such as 500 watts, 800 watts, 1000 watts and 1200 watts, the flow rate of COS is 20sccm to 200sccm, such as 50sccm, 100sccm, 150sccm and N 2 The flow rate is 100sccm to 1000sccm, such as 200sccm, 500sccm, 800sccm.
In another embodiment, the second polymer is a mixed polymer, the second polymer includes a first sub-polymer and a second sub-polymer, the first sub-polymer is a fluorocarbon high polymer and does not include a sulfur element, and the second sub-polymer is a sulfur-containing polymer.
The thickness of the second polymer in each step of forming the second polymer needs to be selected in an appropriate range. If the thickness of the second polymer is less than 100 nanometers, the covering capability of the first polymer is poor, when the appearance of the first polymer is burr, the first polymer formed previously may not be completely covered by the excessively thin second polymerization region, and the first polymer also has the risk of falling in the subsequent evidence etching process; if the thickness of the second polymer is greater than 1 μm, the process is wasted, and the stress of the second polymer itself increases too much, and there is a risk of dropping.
Therefore, in the present embodiment, in each step of forming the second polymer, the thickness of the second polymer is 100 nm to 1 μm, and the thickness of the second polymer 130 is 100 nm to 1 μm.
Referring to fig. 6, after the second polymer 130 is formed, the proof etching process is sequentially performed on the M wafers.
The said etching process is plasma dry etching process.
And in the process of sequentially carrying out the evidence-based etching process on the M wafers, depositing a first high polymer 140 on the wall of the etching cavity.
In the process of sequentially carrying out the etching process of the certificate on the M wafers, the etching gas adopted by the certificate etching process comprises fluorocarbon-based gas, and the fluorocarbon-based gas does not comprise sulfur element.
The sulfur element is not contained in the process of carrying out the evidence etching process, so that the adverse effect on the etching morphology of the wafer is avoided.
The first high polymer 140 is a fluorocarbon high polymer, and the first high polymer 140 does not include sulfur element.
In this embodiment, M is an integer of 2 or more.
Referring to fig. 7, after the M wafers are successively subjected to the proof etching, a second polymer 150 is formed on the walls of the etching chamber 100.
The adhesion coefficient, material, formation process, and thickness of the second polymer 150 are all referenced to the second polymer 130.
In one embodiment, the thickness of the second polymer 150 is greater than the thickness of the second polymer 130.
In this embodiment, the polymer forming step is performed a plurality of times between two adjacent cleaning and maintenance of the etching chamber, and the thickness of the second polymer formed at the latter time is larger than that of the second polymer formed at the former time.
Referring to fig. 8, after the second polymer 150 is formed on the walls of the etching chamber 100, the proof etching process is sequentially performed on the Q-wafer.
And in the process of sequentially carrying out the evidence-based etching process on the Q wafer, depositing a first high polymer 160 on the wall of the etching cavity.
In the process of sequentially carrying out the etching process of the wafer Q, the etching gas adopted by the etching process comprises fluorocarbon-based gas, and the fluorocarbon-based gas does not comprise sulfur element.
The sulfur element is not contained in the process of carrying out the intrinsic etching process, so that the adverse effect on the etching morphology of the wafer is avoided.
The first high polymer 160 is a fluorocarbon high polymer, and the first high polymer 160 does not include sulfur element.
In this embodiment, Q is an integer of 2 or more.
Referring to fig. 9, after the proof etching process is performed on the Q-wafer in sequence, the etching chamber 100 is cleaned and maintained.
The cleaning and maintenance process refers to the foregoing and will not be described in detail.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (15)

1. A processing method of a dry etching cavity is characterized by comprising the following steps:
providing an etching cavity;
respectively carrying out a witness etching process on a plurality of wafers by adopting the etching cavity, wherein the witness etching process forms a first high polymer on the cavity wall of the etching cavity;
and forming a second polymer on the wall of the etching cavity in the process interval of carrying out the proof etching process on at least part of the wafer, wherein the adhesion coefficient of the second polymer is larger than that of the first polymer.
2. The method of claim 1, wherein the second polymer has a sticking coefficient 2 to 10 times that of the first polymer.
3. The processing method of the etching chamber as claimed in claim 1, wherein the etching chamber is a plasma dry etching chamber, and the present etching process is a plasma dry etching process.
4. The processing method of the etching chamber as claimed in claim 1, wherein the etching gas used in the witness etching process comprises a fluorocarbon-based gas, and the fluorocarbon-based gas does not comprise elemental sulfur; the first high polymer is fluorocarbon high polymer, and the first high polymer does not comprise sulfur element.
5. The method of claim 1, wherein forming the second polymer comprises: introducing reaction gas into the etching cavity; and exciting the plasma discharge of the reaction gas to form a second polymer on the wall of the etching cavity.
6. The method of claim 5, wherein the second polymer is a sulfur-containing polymer.
7. The method as claimed in claim 6, wherein the reaction gas comprises COS and SO 2 、H 2 S and CS 2 One or a combination of any of them.
8. The method of claim 7, wherein the reactive gas further comprises Ar and N 2 Either one or both.
9. The method as recited in claim 6, wherein the reactant gas comprises COS and N 2 In the process of exciting the reaction gas plasma to discharge, the adopted chamber pressure is 50mtorr to 500mtorr, the adopted source radio frequency power is 300-1500 watts, the flow rate of COS is 20sccm to 200sccm, and N is higher than N 2 The flow rate is 100sccm to 1000sccm.
10. The method of claim 1, wherein the second polymer is a mixed polymer, the second polymer comprises a first sub-polymer and a second sub-polymer, the first sub-polymer is a fluorocarbon polymer and does not include elemental sulfur, and the second sub-polymer is a sulfur-containing polymer.
11. The method of claim 1, wherein the second polymer has a thickness of 100 nm to 1 μm in each step of forming the second polymer.
12. The method of claim 1, further comprising: before and after the self-certified etching process is respectively carried out on a plurality of wafers, cleaning and maintaining the etching cavity, wherein the cleaning and maintaining comprises the following steps: removing substances attached to the wall of the etching cavity; and after removing substances attached to the wall of the etching cavity, depositing an initial polymer on the wall of the etching cavity.
13. The method of claim 12, wherein the initial polymer is a fluorocarbon polymer and is sulfur free.
14. The method of claim 12, wherein the initial polymer is a sulfur-containing polymer.
15. The method of claim 12, wherein the initial polymer comprises a first initial sub-polymer and a second initial sub-polymer, the first initial sub-polymer is a fluorocarbon polymer and does not contain sulfur, and the second initial sub-polymer is a sulfur-containing polymer.
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1399008A (en) * 2001-07-24 2003-02-26 旺宏电子股份有限公司 Reaction chamber regulating method
CN104576305A (en) * 2013-10-23 2015-04-29 中微半导体设备(上海)有限公司 Self-cleaning vacuum treatment chamber
CN104716033A (en) * 2015-03-20 2015-06-17 上海华力微电子有限公司 Method for improving stability of key dimension of polycrystalline silicon grid electrode after etching chamber maintenance
CN104752142A (en) * 2013-12-31 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 Method for regulating and controlling environment of plasma reaction chamber
CN105097485A (en) * 2014-05-05 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 Chamber environment regulation method
CN106449345A (en) * 2016-11-09 2017-02-22 上海华力微电子有限公司 Maintenance method for prolonging time interval of opening maintenance of etching cavity
CN106887381A (en) * 2017-03-27 2017-06-23 上海华力微电子有限公司 A kind of optimization method of etching cavity environmental stability
CN109841475A (en) * 2017-11-28 2019-06-04 北京北方华创微电子装备有限公司 Preprocess method and wafer processing
CN110400749A (en) * 2019-07-17 2019-11-01 上海华力微电子有限公司 A kind of remaining method of improvement crystal column surface microparticle

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1399008A (en) * 2001-07-24 2003-02-26 旺宏电子股份有限公司 Reaction chamber regulating method
CN104576305A (en) * 2013-10-23 2015-04-29 中微半导体设备(上海)有限公司 Self-cleaning vacuum treatment chamber
CN104752142A (en) * 2013-12-31 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 Method for regulating and controlling environment of plasma reaction chamber
CN105097485A (en) * 2014-05-05 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 Chamber environment regulation method
CN104716033A (en) * 2015-03-20 2015-06-17 上海华力微电子有限公司 Method for improving stability of key dimension of polycrystalline silicon grid electrode after etching chamber maintenance
CN106449345A (en) * 2016-11-09 2017-02-22 上海华力微电子有限公司 Maintenance method for prolonging time interval of opening maintenance of etching cavity
CN106887381A (en) * 2017-03-27 2017-06-23 上海华力微电子有限公司 A kind of optimization method of etching cavity environmental stability
CN109841475A (en) * 2017-11-28 2019-06-04 北京北方华创微电子装备有限公司 Preprocess method and wafer processing
CN110400749A (en) * 2019-07-17 2019-11-01 上海华力微电子有限公司 A kind of remaining method of improvement crystal column surface microparticle

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