CN106356415A - Production method of back metal grids - Google Patents
Production method of back metal grids Download PDFInfo
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- CN106356415A CN106356415A CN201611097321.3A CN201611097321A CN106356415A CN 106356415 A CN106356415 A CN 106356415A CN 201611097321 A CN201611097321 A CN 201611097321A CN 106356415 A CN106356415 A CN 106356415A
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- Prior art keywords
- layer
- back metal
- manufacture method
- metal grid
- titanium nitride
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 42
- 239000002184 metal Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 107
- 238000000034 method Methods 0.000 claims description 70
- 239000011241 protective layer Substances 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 26
- 239000006117 anti-reflective coating Substances 0.000 claims description 21
- 230000007704 transition Effects 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000008054 signal transmission Effects 0.000 abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 description 15
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 150000001722 carbon compounds Chemical class 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a production method of back metal grids. The production method comprises the following steps of providing a semiconductor substrate, wherein a photoelectric signal transmission layer, a titanium nitride protecting layer, a hard mask layer and a graphical photoresist layer are sequentially formed on the back side of the semiconductor substrate; by taking the graphical photoresist layer as a mask, etching the hard mask layer and part of titanium nitride protecting layer by adopting fluoride-containing gas; performing a photoresist removing technology in a cavity for etching the titanium nitride protecting layer; cleaning a semiconductor device; by taking the hard mask layer as a mask, etching the titanium nitride protecting layer and the photoelectric signal transmission layer to form the back metal grids. According to the production method provided by the invention, the problem that side walls of the metal grids formed by adopting a traditional production method of the back metal grids are rough is solved.
Description
Technical field
The present invention relates to semiconductor process technique field is and in particular to a kind of manufacture method of back metal grid.
Background technology
In the semiconductor device, generally adopt back metal grid (backside metal grid) as photosignal
Transmission channel, it is most important to the stability of photosignal transmission.
At present, the manufacture method of the back metal grid in semiconductor device production process comprises the following steps:
First, as shown in figure 1, sequentially forming photosignal transport layer 103, titanium nitride guarantor at Semiconductor substrate 100 back side
Sheath 104, hard mask layer 106 and patterned photoresist layer 108；
Then, as shown in Fig. 2 with described graphical photoresist layer 108 as mask, using fluoro-gas to described hard mask layer
106 and partial nitridation titanium protective layer 104 perform etching, form first groove 110, then carried out removing photoresist work by the board that removes photoresist
Skill, to remove patterned photoresist layer 108；
Then, using wet clean process, described Semiconductor substrate 100 is carried out；
Then, as shown in figure 3, with described hard mask layer 106 as mask, to remaining titanium nitride in Semiconductor substrate 100
Protective layer 104 and photosignal transport layer 103 perform etching, to form second groove 111, described photosignal transport layer
103 material is usually metallic aluminium, and multiple above-mentioned groove compositions are grid-like, that is, form back metal grid (as shown in Figure 4).
However, it has been found that after process above, described back metal grid side wall is second groove side wall 111 '
Very coarse, so that the yield of impact semiconductor device.
Content of the invention
The invention provides a kind of manufacture method of back metal grid, to solve using traditional back metal grid
The problem of the metallic grid sidewall roughness that manufacture method is formed.
The invention provides a kind of manufacture method of back metal grid, it comprises the following steps:
There is provided semi-conductive substrate, the described Semiconductor substrate back side is sequentially formed with photosignal transport layer, titanium nitride is protected
Sheath, hard mask layer and patterned photoresist layer；
With described patterned photoresist layer as mask, using fluoro-gas, described hard mask layer and partial nitridation titanium are protected
Layer performs etching；
Carry out degumming process in the cavity etching described titanium nitride protective layer；
Described semiconductor device is carried out；
With described hard mask layer as mask, described titanium nitride protective layer and described photosignal transport layer are performed etching,
Form back metal grid.
Optionally, the material of described hard mask layer is one of silicon oxide, silicon nitride or combination.
Optionally, the material of described photosignal transport layer is metallic aluminium.
Optionally, the back side of described Semiconductor substrate is also formed with transition zone and the protection being located on described transition zone
Layer, described photosignal transport layer is formed on described protective layer.
Optionally, the material of described transition zone is one of silicon dioxide, silicon nitride or combination, the material of described protective layer
Matter is titanium nitride.
Optionally, it is also formed with dielectric anti-reflective coating between described titanium nitride protective layer and hard mask layer.
Optionally, the material of described dielectric anti-reflective coating is silicon oxynitride.
Optionally, it is also formed with bottom antireflective coating between described hard mask layer and patterned photoresist layer.
Optionally, the gas adopting in described degumming process is oxygen.
Optionally, the temperature of described degumming process is at 45 DEG C～50 DEG C.
Optionally, in 24 hours after the completion of described degumming process, described semiconductor device is carried out.
Optionally, the ammonium fluoride of employing and the mixed solution of fluoram carry out wet-cleaning to described semiconductor device.
The manufacture method of the back metal grid being provided using the present invention, etches hard mask layer and one using fluoro-gas
After dividing titanium nitride protective layer, in the cavity performing etching technique, directly carry out degumming process, so, produce in etch step
When raw titanium fluoride and carbon compound are also not associated with tight, just by degumming process, the carbon in carbon compound is removed,
Reduce the adhesiveness of polymer so as to can be easier to come off in subsequent wet cleaning.Consequently, it is possible to the gold etching
Possessive case grid side wall, i.e. described second groove side wall 111 ', can more smooth compared with traditional handicraft, smooth, the yield of semiconductor device
Also will be lifted.Further, by the temperature setting of degumming process between 45 DEG C -50 DEG C, polymer warp can so be avoided
High-temperature baking, advantageously reduces the removal difficulty of polymer.
Brief description
Fig. 1 is the film layer cross-sectional view before the manufacture method etching of traditional back metal grid；
Fig. 2 is the film layer cross-sectional view after the manufacture method degumming process of traditional back metal grid；
Fig. 3 is the film layer section knot after the completion of the manufacture method photosignal transport layer etching of traditional back metal grid
Structure schematic diagram；
Fig. 4 is the schematic top plan view of the metallic grid of manufacture method formation of traditional back metal grid；
Fig. 5 is the manufacture method film layer section before etching of the back metal grid that the preferred embodiment of the present invention provides
Structural representation；
Fig. 6 is that the film layer after degumming process for the manufacture method of the back metal grid that the preferred embodiment of the present invention provides is cutd open
Face structural representation；
Fig. 7 is that the manufacture method of the back metal grid that the preferred embodiment of the present invention provides etches in photosignal transport layer
After the completion of film layer cross-sectional view；
Fig. 8 is the schematic flow sheet of the manufacture method of back metal grid that the preferred embodiment of the present invention provides；
The description of symbols of accompanying drawing 1- accompanying drawing 7 is as follows:
100th, 200- Semiconductor substrate；
201- transition zone；
202- protective layer；
103rd, 203- photosignal transport layer；
104th, 204- titanium nitride protective layer；
205- dielectric anti-reflective coating；
106th, 206- hard mask layer；
207- bottom antireflective coating；
108th, the patterned photoresist layer of 208-；
109th, 209- polymer；
110th, 210- first groove；
111st, 211- second groove；
111 ', 211 '-second groove side wall.
Specific embodiment
In the introduction it has been already mentioned that utilizing existing process, the metallic grid side wall that etches on a semiconductor substrate
Very coarse, so that the yield of impact semiconductor device.Applicant finds through further investigation, and this is due to using containing fluorine gas
Body creates during hard mask layer 106 and partial nitridation titanium protective layer 104 are performed etching by titanium fluoride and contains carbonization
The polymer 109 (as shown in Figure 2) that compound is combined into, this polymer 109 adheres to bottom and the side wall of first groove 110
On, even if through wet-cleaning it is also difficult to remove this polymer 109 completely.Consequently, it is possible to subsequently to photosignal transport layer
103 when performing etching, and due to the stop of polymer 109, leads to the second groove side wall 111 ' etching very coarse, i.e. to lead
Cause the side wall of metallic grid very coarse, thus affecting the yield of semiconductor device.Analysis finds applicant further, due to passing
The temperature higher (generally at 300 DEG C about) of system degumming process, this polymer 109 after the high-temperature baking of degumming process,
More it is difficult to remove by wet clean process.
Based on this, the present invention provides a kind of manufacture method of back metal grid, etching hard mask layer 106 and titanium nitride to protect
After sheath 104, in the cavity of etching technics, directly carry out degumming process, so, titanium fluoride in polymer 109 and containing
When carbon compound is also not associated with tight, just the carbon in carbon compound is removed by degumming process, reduce polymer
Adhesiveness so as to can be easier to come off in subsequent cleaning processes.Consequently, it is possible to etch the side wall of metallic grid, i.e. the
Two trenched side-wall 111 ' can be more smooth compared with traditional handicraft, smooth, and the yield of semiconductor device also will be lifted.Further
, by the temperature setting of degumming process between 45 DEG C -50 DEG C, polymer so can be avoided through high-temperature baking, reduce further
Remove difficulty.
Below in conjunction with the drawings and specific embodiments, back metal grid manufacture method proposed by the present invention is made detailed further
Describe in detail bright.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is equal
In the form of very simplification and all using non-accurately ratio, only in order to conveniently, lucidly to aid in illustrating the embodiment of the present invention
Purpose.
As shown in figure 8, the manufacture method of the back metal grid of preferred embodiment of the present invention offer, comprise the following steps:
S1, offer semi-conductive substrate, the described Semiconductor substrate back side is sequentially formed with photosignal transport layer, titanium nitride
Protective layer, hard mask layer and patterned photoresist layer；
S2, with described patterned photoresist layer as mask, using fluoro-gas to described hard mask layer and partial nitridation titanium
Protective layer performs etching；
S3, etch described titanium nitride protective layer cavity in carry out degumming process；
S4, described semiconductor device is carried out；
S5, with described hard mask layer as mask, to described titanium nitride protective layer remainder and described photosignal transmission
Layer performs etching, and forms back metal grid.
Introduced in more detail with reference to generalized section 5～7.
With reference to Fig. 5, in step s1, the material of described photosignal transport layer 203 is, for example, metallic aluminium, described optical telecommunications
The thickness of number transport layer is, for example,The material of described hard mask layer 206 is, for example, silicon dioxide, nitridation
One of silicon or combination, described hard mask layer thickness is, for example,The thickness of described graphical photoresist layer
Spend and beCertainly, in actual applications, described photosignal transport layer 203 also may be used with hard mask layer 206
Using other materials, and, the thickness of above-mentioned film layer is adjusted with being actually needed also dependent on process conditions.Described optical telecommunications
The generation type of number transport layer 203 and hard mask layer 206 can be chemical vapor deposition (cvd) or physical vapour deposition (PVD)
(pvd), such as, described photosignal transport layer 203 is formed using sputtering technology, and described hard mask layer 206 adopts plasma to increase
Extensive chemical vapour deposition (pecvd) technique is formed.
With continued reference to shown in Fig. 5, described Semiconductor substrate 200 back side is also formed with transition zone 201 and is located at transition zone
Protective layer 202 on 201, described photosignal transport layer 203 is formed on described protective layer 202.Described transition zone 201
After formation, described Semiconductor substrate 200 surface can be made more flat, further, described protective layer 202 can be made to be easier to adhere to,
Described protective layer 202 can prevent photosignal transport layer 203 and subsurface material cross-diffusion.The material example of described transition zone 201
As for one of silicon dioxide, silicon nitride or combination, its thickness is, for example,Described protective layer 202
Material is, for example, titanium nitride layer, and its thickness is, for example,Described transition zone 201 and the formation of protective layer 202
Mode can be chemical vapor deposition or physical vapour deposition (PVD).Certainly in actual applications, described transition zone 201 and described protection
The material of layer 202 is not limited to both materials, and its thickness is adjusted also dependent on process conditions.Described photosignal transport layer
Also described transition zone 201 can be only formed between 203 and described Semiconductor substrate 200, or be only formed with described protective layer
202, then or described photosignal transport layer 203 be located immediately at the back side of described Semiconductor substrate 200.
With reference to shown in Fig. 5, in step s1, also formed between described titanium nitride protective layer 204 and described hard mask layer 206
There is dielectric anti-reflective coating (darc) 205, the material of described dielectric anti-reflective coating 205 is silicon oxynitride, and thickness isThe generation type of described dielectric anti-reflective coating 205 can be chemical vapor deposition or physical vapor
Deposition.Certainly the material of described in actual applications dielectric anti-reflective coating 205 is not limited to silicon oxynitride, and its thickness also can root
It is adjusted according to process conditions.
Further, it is also formed with bottom antireflective coating between described hard mask layer 206 and patterned photoresist layer 208
(barc) 207, the material of described bottom antireflective coating 207 is class photoresistance material, and it can reduce described graphical photoresist layer 208
In exposure, the reflection of the light of described graphical photoresist layer 208 bottom, its thickness is, for example,Certainly exist
The material of bottom antireflective coating 207 described in practical application is not limited to class photoresistance material, and thickness enters also dependent on process conditions
Row adjustment.
With reference to shown in Fig. 6, in step s2, with described patterned photoresistance 208 as mask, using fluoro-gas to described
The bottom antireflective coating 207 of film layer structure, hard mask layer 206, dielectric anti-reflective coating 205 and titanium nitride protective layer
204 part carries out dry etching, forms first groove 210.Described fluoro-gas is, for example, cf4 or c4f8, described contains
The flow of fluorine gas is, for example, 400sccm～600sccm, and the etching device of employing is, for example, capacitance coupling type plasma exciatiaon
Device, energy is, for example, 800w, and the pressure of etching cavity is, for example, 100mtorr～110mtorr.It is understood that working as institute
State the film layer structure on photosignal transport layer 203 and only include described patterned photoresist layer 208, bottom antireflective coating
207th, hard mask layer 206 and during titanium nitride protective layer 204, step s2 is then to described bottom antireflective coating 207, hard mask layer
206 and the part of titanium nitride protective layer 204 perform etching；Film layer structure on described photosignal transport layer 203 is only
During including described patterned photoresist layer 208, hard mask layer 206, dielectric anti-reflective coating 205 and titanium nitride protective layer 204,
Step s2 is then carved to a part for described hard mask layer 206, dielectric anti-reflective coating 205 and titanium nitride protective layer 204
Erosion；Film layer structure on described photosignal transport layer 203 only includes described patterned photoresist layer 208, hard mask layer
206 and during titanium nitride protective layer 204, step s2 is then carried out to a part for described hard mask layer 206 and titanium nitride protective layer 204
Etching.
In step s3, described degumming process is carried out in same cavity used by being etched with step s2, removes photoresist and is adopted
Gas be preferably oxygen, its effect of removing photoresist is ideal.The temperature of degumming process is preferably 45 DEG C -50 DEG C, it is to avoid polymer
Carry out high-temperature baking, be conducive to removing polymer subsequently through wet clean process.The over etching amount of degumming process is, for example,
100%-200%, to ensure that photoresistance is removed clean.The energy of degumming process is, for example, 1000w-1500w.May be appreciated
It is that, for the patterned photoresist layer 208 of unlike material or thickness, technological parameter can do corresponding adjustment.
In step s4, preferably 24 hours after the completion of described degumming process in complete wet clean process, so can keep away
The polymeric long time generating in exempting to etch is attached to the side wall of described first groove 210 and bottom and is difficult to remove.Described wet
The cleaning solution that method etching technics is adopted is, for example, the mixed solution of ammonium fluoride and fluoram, in certain practical application, no
It is limited to this kind of solution, be also not necessarily limited to wet-cleaning mode.
With reference to shown in Fig. 7, in step s5, with described hard photoresist layer 206 for mask mask, described Semiconductor substrate is carried on the back
Remaining titanium nitride protective layer 204 and photosignal transport layer 203 on face.If described photosignal transport layer 203 is directly formed
On transition zone 201, or, described protective layer 202 is formed directly into the back side of Semiconductor substrate 100, then or, described light
203 layers of electric signal transmission layer is formed directly into the back side of Semiconductor substrate 100, is all to fall described quasiconductor lining using dry etching
On the back side at bottom 100, remaining titanium nitride protective layer 204 and photosignal transport layer 203 stop.This dry etching adopts
Gas is, for example, c4f8, o2 and ar, and c4f8 flow is, for example, 10sccm～50sccm, and o2 flow e.g. 10sccm～
50sccm, ar flow is, for example, 500sccm～2000sccm, and energy is, for example, 1500w～1600w, the pressure example of etching cavity
50mtorr～60mtorr in this way.After the completion of etching, form second groove 211, the polymer due to generating in step s2 is removed
More clean, thus described second groove side wall 211 ', i.e. metallic grid side wall is more smooth compared with traditional handicraft, smooth.
Foregoing description is only the description to present pre-ferred embodiments, not any restriction to the scope of the invention, this
Any change that the those of ordinary skill in bright field does according to the disclosure above content, modification, belong to the protection of claims
Scope.
Claims (12)
1. a kind of manufacture method of back metal grid is it is characterised in that comprise the following steps:
There is provided semi-conductive substrate, the described Semiconductor substrate back side be sequentially formed with photosignal transport layer, titanium nitride protective layer,
Hard mask layer and patterned photoresist layer；
With described patterned photoresist layer as mask, using fluoro-gas, described hard mask layer and partial nitridation titanium protective layer are entered
Row etching；
Carry out degumming process in the cavity etching described titanium nitride protective layer；
Described semiconductor device is carried out；
With described hard mask layer as mask, described titanium nitride protective layer and described photosignal transport layer are performed etching, formed
Back metal grid.
2. the manufacture method of back metal grid as claimed in claim 1 is it is characterised in that the material of described hard mask layer is
One of silicon oxide, silicon nitride or combination.
3. the manufacture method of back metal grid as claimed in claim 1 is it is characterised in that described photosignal transport layer
Material is metallic aluminium.
4. the manufacture method of back metal grid as claimed in claim 1 is it is characterised in that the back side of described Semiconductor substrate
On be also formed with transition zone and the protective layer being located on described transition zone, described photosignal transport layer is formed at described protection
On layer.
5. the manufacture method of back metal grid as claimed in claim 4 is it is characterised in that the material of described transition zone is two
One of silicon oxide, silicon nitride or combination, the material of described protective layer is titanium nitride.
6. back metal grid as claimed in claim 1 manufacture method it is characterised in that described titanium nitride protective layer with hard
It is also formed with dielectric anti-reflective coating between mask layer.
7. the manufacture method of back metal grid as claimed in claim 6 is it is characterised in that described dielectric anti-reflective coating
Material be silicon oxynitride.
8. back metal grid as claimed in claim 1 manufacture method it is characterised in that described hard mask layer with graphical
Photoresist layer between be also formed with bottom antireflective coating.
9. the manufacture method of the back metal grid as any one of claim 1～8 is it is characterised in that described remove photoresist
The gas adopting in technique is oxygen.
10. the manufacture method of the back metal grid as any one of claim 1～8 is it is characterised in that described remove photoresist
The temperature of technique is at 45 DEG C～50 DEG C.
The manufacture method of the 11. back metal grids as any one of claim 1～8 is it is characterised in that go described
In 24 hours after the completion of adhesive process, described semiconductor device is carried out.
The manufacture method of the 12. back metal grids as any one of claim 1～8 is it is characterised in that the fluorine that adopts
The mixed solution changing ammonium with fluoram carries out wet-cleaning to described semiconductor device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611097321.3A CN106356415B (en) | 2016-12-02 | 2016-12-02 | The production method of back metal grid |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611097321.3A CN106356415B (en) | 2016-12-02 | 2016-12-02 | The production method of back metal grid |
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| CN106356415A true CN106356415A (en) | 2017-01-25 |
| CN106356415B CN106356415B (en) | 2018-06-29 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108375871A (en) * | 2018-02-06 | 2018-08-07 | 武汉新芯集成电路制造有限公司 | A kind of mask plate, production method and the method for alignment |
| CN112366211A (en) * | 2020-11-26 | 2021-02-12 | 武汉新芯集成电路制造有限公司 | Substrate for backside illuminated image sensor and method for manufacturing backside illuminated image sensor |
| WO2022077986A1 (en) * | 2020-10-14 | 2022-04-21 | 长鑫存储技术有限公司 | Manufacturing process of semiconductor structure and semiconductor structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108375871A (en) * | 2018-02-06 | 2018-08-07 | 武汉新芯集成电路制造有限公司 | A kind of mask plate, production method and the method for alignment |
| CN108375871B (en) * | 2018-02-06 | 2021-08-24 | 武汉新芯集成电路制造有限公司 | Mask plate, manufacturing method and alignment method |
| WO2022077986A1 (en) * | 2020-10-14 | 2022-04-21 | 长鑫存储技术有限公司 | Manufacturing process of semiconductor structure and semiconductor structure |
| CN112366211A (en) * | 2020-11-26 | 2021-02-12 | 武汉新芯集成电路制造有限公司 | Substrate for backside illuminated image sensor and method for manufacturing backside illuminated image sensor |
| WO2022110383A1 (en) * | 2020-11-26 | 2022-06-02 | 武汉新芯集成电路制造有限公司 | Backside illuminated image sensor substrate and method for manufacturing backside illuminated image sensor |
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