CN106328502B - SiGeSn material and preparation method thereof - Google Patents

SiGeSn material and preparation method thereof Download PDF

Info

Publication number
CN106328502B
CN106328502B CN201510355810.3A CN201510355810A CN106328502B CN 106328502 B CN106328502 B CN 106328502B CN 201510355810 A CN201510355810 A CN 201510355810A CN 106328502 B CN106328502 B CN 106328502B
Authority
CN
China
Prior art keywords
substrate
ion
sige layer
preparation
sigesn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510355810.3A
Other languages
Chinese (zh)
Other versions
CN106328502A (en
Inventor
张波
孟骁然
俞文杰
狄增峰
张苗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Microsystem and Information Technology of CAS
Original Assignee
Shanghai Institute of Microsystem and Information Technology of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Microsystem and Information Technology of CAS filed Critical Shanghai Institute of Microsystem and Information Technology of CAS
Priority to CN201510355810.3A priority Critical patent/CN106328502B/en
Publication of CN106328502A publication Critical patent/CN106328502A/en
Application granted granted Critical
Publication of CN106328502B publication Critical patent/CN106328502B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention provides a kind of SiGeSn material and preparation method thereof, and for preparation method the following steps are included: providing substrate, the substrate includes SiGe layer；The atom containing Sn element, molecule, ion or plasma are injected into the SiGe layer；The substrate after injection is made annealing treatment.SiGeSn material and preparation method thereof of the invention has the advantages that low in cost, simple process, better quality compared to the prior art, is more conducive to be mass produced.

Description

SiGeSn material and preparation method thereof
Technical field
The invention belongs to semiconductor material preparation field, in particular to a kind of preparation method of SiGeSn material.
Background technique
Currently, SiGeSn material is widely used in semiconductor field.When growing SiGeSn material, generally use Method be molecular beam epitaxy (MBE), the process of existing MBE technique growth SiGeSn material are as follows: first extension is raw on substrate Long one layer of SiGe buffer layer, then epitaxy Si GeSn film material plies.The preferable SiGeSn film of crystal quality can be obtained in this method Material layer, but equipment is expensive, growth course is more time-consuming, and it is at high cost, it will be subject to certain restrictions in large-scale production.
Also someone grows SiGeSn thin-film material using chemical vapor deposition (CVD) technique, but technique is unstable, worth SiGeSn thin-film material is second-rate, and thermal stability is bad, and Sn is easily segregated, and cost is also higher.
Summary of the invention
The present invention In view of the above shortcomings of the prior art, proposes a kind of SiGeSn material and preparation method thereof, uses Exist in the prior art due to using molecular beam epitaxial process or chemical vapor deposition process to grow SiGeSn material in solution Growth process is more time-consuming, the problems such as at high cost, second-rate, thermal stability is bad, Sn is easily segregated.
In order to achieve the above objects and other related objects, the present invention provides a kind of preparation method of SiGeSn material, at least The following steps are included:
Substrate is provided, the substrate includes SiGe layer；
The atom containing Sn element, molecule, ion or plasma are injected into the SiGe layer；
The substrate after injection is made annealing treatment.
A kind of preferred embodiment of preparation method as SiGeSn material of the invention, the substrate are SGOI substrate, table Layer is the Si substrate or Ge substrate of SiGe film.
A kind of preferred embodiment of preparation method as SiGeSn material of the invention, moles the hundred of Ge in the SiGe layer Dividing content is 15%~60%.
A kind of preferred embodiment of preparation method as SiGeSn material of the invention, contains injecting into the SiGe layer Before having atom, molecule, ion or the plasma of Sn element, further include the steps that injecting C ion into the SiGe layer.
A kind of preferred embodiment of preparation method as SiGeSn material of the invention is injecting C into the SiGe layer During ion, ion implantation energy is 10KeV~100KeV, and ion implantation dosage is 1E14~1E17.
A kind of preferred embodiment of preparation method as SiGeSn material of the invention is injecting C into the SiGe layer Before ion, further include the steps that cleaning the substrate.
A kind of preferred embodiment of preparation method as SiGeSn material of the invention is injecting C into the SiGe layer After ion, is injected before the atom containing Sn element, molecule, ion or plasma into the SiGe layer, further include one The step of substrate is made annealing treatment.
A kind of preferred embodiment of preparation method as SiGeSn material of the invention, injects into the SiGe layer and contains The process made annealing treatment to the substrate before atom, molecule, ion or the plasma of Sn element is in vacuum, N2Or it is lazy Property atmosphere in carry out, annealing temperature be 500 DEG C~1000 DEG C, annealing time be 1 hour~3 hours.
A kind of preferred embodiment of preparation method as SiGeSn material of the invention, injects into the SiGe layer and contains During the atom of Sn element, molecule, ion or plasma, Implantation Energy is 10KeV~100KeV, and implantation dosage is 1E14~1E17.
A kind of preferred embodiment of preparation method as SiGeSn material of the invention, injects into the SiGe layer and contains The process made annealing treatment to the substrate after atom, molecule, ion or the plasma of Sn element is in vacuum, N2Or it is lazy Property atmosphere in carry out, annealing temperature be 500 DEG C~1000 DEG C, annealing time be 1 hour~3 hours.
The present invention also provides a kind of SiGeSn material, the SiGeSn material through the above scheme in any preparation method It is prepared.
A kind of SiGeSn material of the invention and preparation method thereof have the beneficial effect that SiGeSn material of the invention and its Preparation method has the advantages that low in cost, simple process, better quality compared to the prior art, is more conducive to be mass produced.
Detailed description of the invention
Fig. 1 is shown as the flow chart of the preparation method of SiGeSn material of the invention.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 1.It should be noted that illustrating what only the invention is illustrated in a schematic way provided in the present embodiment Basic conception, though only show in diagram with related component in the present invention rather than component count, shape when according to actual implementation And size is drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its assembly layout Kenel may also be increasingly complex.
Such as Fig. 1, the present invention provides a kind of preparation method of SiGeSn material, at least includes the following steps:
S1: providing substrate, and the substrate includes SiGe layer；
S2: the atom containing Sn element, molecule, ion or plasma are injected into the SiGe layer；
S3: the substrate after injection is made annealing treatment.
Step S1 is executed, the S1 step in Fig. 1 is please referred to, substrate is provided, the substrate includes SiGe layer.
As an example, the substrate is using the SiGe layer as the substrate on surface；Specifically, the substrate can be insulation SiGe substrate (SiGe-On-Insulator, SGOI), Si substrate or Ge substrate that surface layer is SiGe film on body.
As an example, Ge content can be selected according to actual needs in the SiGe layer, it is preferable that the SiGe layer The molar content of middle Ge is 1%~90%, it is further preferable that in the present embodiment, the Mole percent of Ge in the SiGe layer Content is 15%~60%.
As an example, injected into the SiGe layer atom containing Sn element, molecule, ion or plasma it Before, further include the steps that injecting C ion into the SiGe layer.Into the SiGe layer inject the atom containing Sn element, C ion is injected in SiGe layer described in the forward direction of molecule, ion or plasma, due to the atomic number of C ion and the original of Si, Ge Sub- ordinal number is compared to smaller, and the atomic number for being subsequently implanted into atomic number ratio Si, Ge of Sn ion is big, first injects atomic number Small ion forms substitution atoms after being conducive to the biggish Sn ion implanting annealing of atomic number, improves the crystal matter of SiGeSn The content of Sn in amount and SiGeSn material.
As an example, the depth of the C ion implanting is by C ion during injecting C ion into the SiGe layer Implantation Energy determined that the defect concentration that the C ion is formed in the SiGe layer is determined by the implantation dosage of C ion It is fixed, therefore, it is extremely important that ion implantation energy and ion implantation dosage appropriate are controlled during C ion implanting.It is preferred that Ground, in the present embodiment, the Implantation Energy of C ion is 10KeV~100KeV, and the implantation dosage of C ion is 1E14~1E17.
As an example, further including the step cleaned to the substrate before injecting C ion into the SiGe layer Suddenly.The substrate is cleaned before C ion implanting, the pollutant of the substrate surface can be effectively removed, it is ensured that The substrate of high-purity is provided for preparation process, in order to prepare the SiGeSn material of high-purity in subsequent preparation process.
As an example, during being cleaned to the substrate, by the substrate successively with acetone, alcohol and go from Sub- water is cleaned；The substrate is cleaned using acetone and alcohol, having for the substrate surface can be effectively removed Machine pollutant later cleans the substrate using deionized water, the inorganic of the substrate surface can be effectively removed Pollutant and the remaining acetone of the substrate surface and alcohol.
As an example, into the SiGe layer, injection contains Sn element after injecting C ion into the SiGe layer Before atom, molecule, ion or plasma, further include the steps that a pair of substrate is made annealing treatment.Compared to The annealing that the substrate is carried out after atom of the injection containing Sn element, molecule, ion or plasma in the SiGe layer Processing, this annealing carried out to the substrate is denoted as to be made annealing treatment for the first time.C ion is being injected into the SiGe layer After injection, C ion can damage the lattice structure of SiGe and form defect sturcture in the SiGe layer, in C ion The substrate is made annealing treatment after injection, annealing process can make the SiGe layer recrystallize and then eliminate C ion note Enter generated defect, i.e. the annealing process reparation that is conducive to C ion implanting bring defect damage.
As an example, the process of first annealing is in vacuum, N2Or it is carried out in atmosphere of inert gases, annealing temperature It is 500 DEG C~1000 DEG C, annealing time is 1 hour~3 hours.
Step S2 is executed, the S2 step in Fig. 1 is please referred to, the atom containing Sn element is injected into the SiGe layer, is divided Son, ion or plasma.
As an example, when needing to form the thick SiGeSn material layer of comparison, can be injected the ion containing Sn element or Plasma；Ion and plasma ability with higher, can be injected deeper depth.It is relatively thin when needing to form When SiGeSn material layer, SiGeSn material layer can be formed by not being only injected into ion or plasma containing Sn element, inject Sn Atom or molecule containing Sn element can also form SiGeSn material layer.
As an example, injection method can use ion implanting, i.e., by with a capability, containing Sn element from Beamlet (plasma including Sn ion or the element containing Sn) is incident in SiGe layer, and is rested in SiGe layer, so that SiGe layer is partially or completely converted to SiGeSn alloy.Specifically, the ion other than conventional ion implanting, in the present embodiment Injection further includes Plasmon ion implanting and plasma immersion and ion implantation, i.e. Plasma based ion implantation.
As an example, the method for injection can use magnetron sputtering.In magnetron sputtering, Ar ion adds under electric field action Speed flies to cathode Sn target or the target containing Sn, and bombards target material surface with high-energy, sputters target；The particle master of sputtering If atom and a small amount of ion.By adjusting voltage of electric field, the technological parameters such as vacuum degree make sputtering particle energy with higher Neck, and SiGe layer is imaged with higher speed, some particles can be injected in SiGe layer and form metastable SiGeSn and close Gold.
As an example, injecting the process of the atom containing Sn element, molecule, ion or plasma into the SiGe layer In, the Implantation Energy of the depth particle of the particle injection is determined that the adjustable Sn element of particle implantation dosage is in SiGe layer In diffusion, therefore, the atom containing Sn element, molecule, ion or plasma injection during control grain appropriate Sub- Implantation Energy and particle implantation dosage are extremely important.Preferably, in the present embodiment, the Implantation Energy of particle be 10KeV~ 100KeV, the implantation dosage of particle are 1E14~1E17.
Step S3 is executed, the S3 step in Fig. 1 is please referred to, the substrate after injection is made annealing treatment.
As an example, this annealing for carrying out to the substrate is denoted as the compared to above-mentioned first time annealing Double annealing processing.It injects after the atom containing Sn element, molecule, ion or plasma into the SiGe layer to described Substrate is made annealing treatment, it can is promoted the generation of the SiGeSn material, and is conducive to repair to inject and come to the backing tape Damage.
As an example, the process of second of annealing is in vacuum, N2Or it is carried out in atmosphere of inert gases, annealing temperature Degree is 500 DEG C~1000 DEG C, and annealing time is 1 hour~3 hours.
The present invention also provides a kind of SiGeSn material, the SiGeSn material is prepared by any method disclosed above It forms.
In conclusion the present invention provides a kind of SiGeSn material and preparation method thereof, the preparation side of the SiGeSn material Method at least includes the following steps: providing substrate, the substrate includes SiGe layer；Into the SiGe layer, injection contains Sn element Atom, molecule, ion or plasma；The substrate after injection is made annealing treatment.
SiGeSn material of the invention and preparation method thereof has low in cost, simple process, matter compared to the prior art Amount is more preferable, is more conducive to the advantages of being mass produced.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as At all equivalent modifications or change, should be covered by the claims of the present invention.

Claims (7)

1. a kind of preparation method of SiGeSn material, which is characterized in that at least include the following steps:
Substrate is provided, the substrate includes SiGe layer；
The substrate is successively cleaned with acetone, alcohol and deionized water；
C ion is injected into the SiGe layer；
Inject the atom containing Sn element, molecule, ion or plasma into the SiGe layer, Implantation Energy be 10KeV~ 100KeV, implantation dosage are 1E14~1E17；
The substrate after injection is made annealing treatment, the process of annealing is in vacuum, N2Or in atmosphere of inert gases into Row, annealing temperature are 500 DEG C~1000 DEG C, and annealing time is 1 hour~3 hours.
2. the preparation method of SiGeSn material according to claim 1, it is characterised in that: the substrate be SGOI substrate, Surface layer is the Si substrate or Ge substrate of SiGe film.
3. the preparation method of SiGeSn material according to claim 1, it is characterised in that: mole of Ge in the SiGe layer Percentage composition is 15%~60%.
4. the preparation method of SiGeSn material according to claim 1, it is characterised in that: injected into the SiGe layer During C ion, ion implantation energy is 10KeV~100KeV, and ion implantation dosage is 1E14~1E17.
5. the preparation method of SiGeSn material according to claim 1, it is characterised in that: injected into the SiGe layer After C ion, is injected before the atom containing Sn element, molecule, ion or plasma into the SiGe layer, further include one The step of substrate is made annealing treatment.
6. the preparation method of SiGeSn material according to claim 5, it is characterised in that: inject and contain into the SiGe layer The process made annealing treatment before the atom, molecule, ion or the plasma that have a Sn element to the substrate is in vacuum, N2Or It is carried out in atmosphere of inert gases, annealing temperature is 500 DEG C~1000 DEG C, and annealing time is 1 hour~3 hours.
7. a kind of SiGeSn material, which is characterized in that the SiGeSn material passes through as described in any one of claims 1 to 6 Preparation method be prepared.
CN201510355810.3A 2015-06-24 2015-06-24 SiGeSn material and preparation method thereof Active CN106328502B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510355810.3A CN106328502B (en) 2015-06-24 2015-06-24 SiGeSn material and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510355810.3A CN106328502B (en) 2015-06-24 2015-06-24 SiGeSn material and preparation method thereof

Publications (2)

Publication Number Publication Date
CN106328502A CN106328502A (en) 2017-01-11
CN106328502B true CN106328502B (en) 2019-02-01

Family

ID=57729507

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510355810.3A Active CN106328502B (en) 2015-06-24 2015-06-24 SiGeSn material and preparation method thereof

Country Status (1)

Country Link
CN (1) CN106328502B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367154A (en) * 2012-03-31 2013-10-23 中芯国际集成电路制造(上海)有限公司 Transistor and method for forming same
CN103377945A (en) * 2012-04-28 2013-10-30 中芯国际集成电路制造(上海)有限公司 Forming method of MOS transistor
CN103839788A (en) * 2014-02-25 2014-06-04 清华大学 SiGeSn layer and forming method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012315B2 (en) * 2013-08-09 2015-04-21 Taiwan Semiconductor Manufacturing Company Limited Methods and systems for dopant activation using microwave radiation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367154A (en) * 2012-03-31 2013-10-23 中芯国际集成电路制造(上海)有限公司 Transistor and method for forming same
CN103377945A (en) * 2012-04-28 2013-10-30 中芯国际集成电路制造(上海)有限公司 Forming method of MOS transistor
CN103839788A (en) * 2014-02-25 2014-06-04 清华大学 SiGeSn layer and forming method thereof

Also Published As

Publication number Publication date
CN106328502A (en) 2017-01-11

Similar Documents

Publication Publication Date Title
US7723154B1 (en) Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
JP2003273017A (en) METHOD OF MANUFACTURING RELAXED SiGe LAYER
CN110047922A (en) Ga2O3 system MISFET and Ga2O3 system MESFET
CN105814671A (en) Method for producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method for manufacturing solid-state imaging element
KR101628312B1 (en) PREPARATION METHOD OF CZTSSe-BASED THIN FILM SOLAR CELL AND CZTSSe-BASED THIN FILM SOLAR CELL PREPARED BY THE METHOD
CN112126897A (en) Preparation method of alpha-phase gallium oxide film
CN102593065A (en) Preparation method for backgate thin film transistor storage
JP2005236272A (en) LOW TEMPERATURE ANNEAL TO REDUCE DEFECT IN HYDROGEN-IMPLANTED, RELAXED SiXGe1-X LAYER
CN107039251A (en) The direct-current ion injection of solid phase epitaxial regrowth in being manufactured for solar cell
CN106910682B (en) Method for improving optical performance by introducing auxiliary ions into modified Si film
US7829376B1 (en) Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
CN106328502B (en) SiGeSn material and preparation method thereof
US10325809B2 (en) Methods for splitting semiconductor devices and semiconductor device
CN107523879B (en) Preparation method of room-temperature ferromagnetic ZnO single crystal film induced by ion implantation defects
CN100575546C (en) A kind of Sb method for preparing p-type ZnO film by doping
Suda et al. GeSn film deposition using metal organic chemical vapor deposition
CN107195534B (en) Ge composite substrate, substrate epitaxial structure and preparation method thereof
Kil et al. The low temperature epitaxy of Ge on Si (1 0 0) substrate using two different precursors of GeH4 and Ge2H6
KR20110042782A (en) Method of forming graphene
CN107564799A (en) The surface treatment method of GaN substrate
CN103839980B (en) MOSFET with SiGeSn source drain and forming method thereof
CN103811304A (en) GeSn layer and forming method thereof
CN105439148B (en) A kind of preparation method of silene
CN206116416U (en) Growth is n on gaAs substrate inGaAs film
CN103022093A (en) Nanoscale silicon germanium material on insulator and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant