CN106328502A - SiGeSn material and preparation method therefor - Google Patents

SiGeSn material and preparation method therefor Download PDF

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Publication number
CN106328502A
CN106328502A CN201510355810.3A CN201510355810A CN106328502A CN 106328502 A CN106328502 A CN 106328502A CN 201510355810 A CN201510355810 A CN 201510355810A CN 106328502 A CN106328502 A CN 106328502A
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ion
sige layer
preparation
substrate
sigesn
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CN106328502B (en
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张波
孟骁然
俞文杰
狄增峰
张苗
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides a SiGeSn material and a preparation method therefor. The preparation method comprises the following steps of providing a substrate, wherein the substrate comprises a SiGe layer; injecting atoms, molecules, ions or plasmas containing a Sn element into the SiGe layer; and performing annealing treatment on the substrate after performing injection. Compared with the prior art, the SiGeSn material and the preparation method therefor have the advantages of low cost, simple process, higher quality, and capability of promoting large-scale production.

Description

SiGeSn material and preparation method thereof
Technical field
The invention belongs to semi-conducting material preparation field, particularly to the preparation method of a kind of SiGeSn material.
Background technology
At present, SiGeSn material is widely used at semiconductor applications.When growing SiGeSn material, generally use Method is molecular beam epitaxy (MBE), and the process of existing MBE technique growth SiGeSn material is: first at substrate Epitaxial growth One layer of SiGe cushion, then epitaxy Si GeSn film material plies.The method can get crystal mass preferable SiGeSn thin film material The bed of material, but apparatus expensive, growth course is the most time-consuming, and cost is high, will be by a definite limitation in large-scale production.
Also someone uses chemical gaseous phase deposition (CVD) technique growth SiGeSn thin-film material, but technique is unstable, the SiGeSn being worth Thin-film material is second-rate, and heat stability is the best, and Sn easily segregates, and cost is the highest.
Summary of the invention
The present invention is directed to deficiencies of the prior art, it is proposed that a kind of SiGeSn material and preparation method thereof, be used for solving Due to the growth process using molecular beam epitaxial process or chemical vapor deposition method to grow SiGeSn material and exist in prior art The problems such as the most time-consuming, cost is high, second-rate, heat stability is the best, Sn easily fractional condensation.
For achieving the above object and other relevant purposes, the present invention provides the preparation method of a kind of SiGeSn material, at least include with Lower step:
Thering is provided substrate, described substrate comprises SiGe layer；
Inject containing the atom of Sn element, molecule, ion or plasma in described SiGe layer；
Described substrate after injecting makes annealing treatment.
As a kind of preferred version of preparation method of the SiGeSn material of the present invention, described substrate is that SGOI substrate, top layer are The Si substrate of SiGe film or Ge substrate.
As a kind of preferred version of preparation method of the SiGeSn material of the present invention, the Mole percent of Ge in described SiGe layer Content is 15%～60%.
As a kind of preferred version of preparation method of the SiGeSn material of the present invention, injecting containing Sn in described SiGe layer Before the atom of element, molecule, ion or plasma, also include the step injecting C ion in described SiGe layer.
As a kind of preferred version of preparation method of the SiGeSn material of the present invention, in described SiGe layer, injecting C ion During, ion implantation energy is 10KeV～100KeV, and ion implantation dosage is 1E14～1E17.
As a kind of preferred version of preparation method of the SiGeSn material of the present invention, in described SiGe layer, injecting C ion Before, the step that described substrate is carried out also is included.
As a kind of preferred version of preparation method of the SiGeSn material of the present invention, in described SiGe layer, injecting C ion Afterwards, before injecting containing the atom of Sn element, molecule, ion or plasma in described SiGe layer, also include a pair Described substrate carries out the step made annealing treatment.
As a kind of preferred version of preparation method of the SiGeSn material of the present invention, inject containing Sn in described SiGe layer The process before the atom of element, molecule, ion or plasma made annealing treatment described substrate is at vacuum, N2Or inertia Carrying out in atmosphere, annealing temperature is 500 DEG C～1000 DEG C, and annealing time is 1 hour～3 hours.
As a kind of preferred version of preparation method of the SiGeSn material of the present invention, inject containing Sn in described SiGe layer During the atom of element, molecule, ion or plasma, Implantation Energy is 10KeV～100KeV, and implantation dosage is 1E14～1E17.
As a kind of preferred version of preparation method of the SiGeSn material of the present invention, inject containing Sn in described SiGe layer The process after the atom of element, molecule, ion or plasma made annealing treatment described substrate is at vacuum, N2Or inertia Carrying out in atmosphere, annealing temperature is 500 DEG C～1000 DEG C, and annealing time is 1 hour～3 hours.
The present invention also provides for a kind of SiGeSn material, and described SiGeSn material is prepared by any one preparation method in such scheme Form.
The SiGeSn material having the beneficial effect that the present invention of a kind of SiGeSn material of the present invention and preparation method thereof and preparation thereof Compared to prior art, method has that with low cost, technique is simple, better quality, the advantage that is more conducive to large-scale production.
Accompanying drawing explanation
Fig. 1 is shown as the flow chart of the preparation method of the SiGeSn material of the present invention.
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by disclosed by this specification Content understand other advantages and effect of the present invention easily.The present invention can also be added by the most different detailed description of the invention To implement or application, the every details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention Various modification or change is carried out under god.
Refer to Fig. 1.It should be noted that the diagram provided in the present embodiment illustrates that the present invention's is basic the most in a schematic way Conception, though component count, shape and size when only showing the assembly relevant with the present invention rather than implement according to reality in Tu Shi Drawing, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout kenel is also It is likely more complexity.
Such as Fig. 1, the present invention provides the preparation method of a kind of SiGeSn material, at least comprises the following steps:
S1: providing substrate, described substrate comprises SiGe layer；
S2: inject containing the atom of Sn element, molecule, ion or plasma in described SiGe layer；
S3: the described substrate after injecting makes annealing treatment.
Performing step S1, refer to the S1 step in Fig. 1, it is provided that substrate, described substrate comprises SiGe layer.
As example, described substrate is the substrate with described SiGe layer as surface；Concrete, described substrate can be on insulator SiGe substrate (SiGe-On-Insulator, SGOI), top layer are Si substrate or the Ge substrate of SiGe film.
As example, in described SiGe layer, Ge content can be selected according to actual needs, it is preferable that described SiGe layer The molar content of middle Ge is 1%～90%, it is further preferable that in the present embodiment, in described SiGe layer moles the hundred of Ge Dividing content is 15%～60%.
As example, before injecting containing the atom of Sn element, molecule, ion or plasma in described SiGe layer, Also include the step injecting C ion in described SiGe layer.In described SiGe layer inject containing Sn element atom, C ion is injected, due to atomic number and Si, Ge of C ion in SiGe layer described in the forward direction of molecule, ion or plasma Atomic number compare less, and it is all big to be subsequently implanted into the atomic number of the Sn ion atomic number than Si, Ge, first injects former Form substitution atoms after the Sn ion implanting annealing that the ion that sub-ordinal number is little, beneficially atomic number are bigger, improve SiGeSn's The content of Sn in crystal mass and SiGeSn material.
As example, during injecting C ion in described SiGe layer, the degree of depth of described C ion implanting is by C ion Implantation Energy determined, the defect concentration that described C ion is formed in described SiGe layer is determined by the implantation dosage of C ion Fixed, therefore, during C ion implanting, control suitable ion implantation energy and ion implantation dosage is extremely important.Preferably Ground, in the present embodiment, the Implantation Energy of C ion is 10KeV～100KeV, and the implantation dosage of C ion is 1E14～1E17.
As example, before injecting C ion in described SiGe layer, also include the step that described substrate is carried out. Before C ion implanting, described substrate is carried out, can effectively remove the pollutant of described substrate surface, it is ensured that for system Standby technique provides highly purified substrate, in order to prepare highly purified SiGeSn material in follow-up preparation technology.
As example, during described substrate is carried out, by described substrate successively with acetone, ethanol and deionized water It is carried out；Use acetone and ethanol that described substrate is carried out, can effectively remove the organic contamination of described substrate surface Thing, afterwards use deionized water described substrate is carried out, can effectively remove described substrate surface inorganic pollution and The acetone of described substrate surface residual and ethanol.
As example, after injecting C ion in described SiGe layer, inject containing Sn element in described SiGe layer Before atom, molecule, ion or plasma, also include that substrate described in a pair carries out the step made annealing treatment.Compared to Inject containing the annealing after the atom of Sn element, molecule, ion or plasma, described substrate carried out in described SiGe layer Processing, the annealing that described substrate is carried out is designated as making annealing treatment for the first time by this.In described SiGe layer inject C from After son injects, the lattice structure of SiGe can be damaged and form defect sturcture in described SiGe layer, at C by C ion Described substrate is made annealing treatment after ion implanting, annealing process can make described SiGe layer recrystallization so that eliminate C from Son injects the reparation of the defect damage that produced defect, i.e. annealing process beneficially C ion implanting is brought.
As example, the process of described first annealing is at vacuum, N2Or atmosphere of inert gases is carried out, annealing temperature is 500 DEG C～1000 DEG C, annealing time is 1 hour～3 hours.
Perform step S2, refer to the S2 step in Fig. 1, in described SiGe layer, inject the atom containing Sn element, divide Son, ion or plasma.
As example, when needing to be formed thicker SiGeSn material layer, can inject the ion containing Sn element or etc. from Daughter；Ion and plasma have higher ability, can be injected into the deeper degree of depth.When needing to form relatively thin SiGeSn During material layer, it is not only injected into the ion containing Sn element or plasma can form SiGeSn material layer, inject Sn atom Or the molecule containing Sn element can also form SiGeSn material layer.
As example, the method for injection can use ion implanting, will have a capability, ion beam containing Sn element (including Sn ion or the plasma containing Sn element) is incided in SiGe layer, and rests in SiGe layer so that SiGe Layer segment or be completely converted into SiGeSn alloy.Concrete, in addition to conventional ion implanting, the ion implanting in the present embodiment Also include Plasmon ion implanting and plasma immersion and ion implantation, i.e. Plasma based ion implantation.
As example, the method for injection can use magnetron sputtering.When magnetron sputtering, Ar ion accelerates to fly under electric field action To negative electrode Sn target or the target containing Sn, and bombard target material surface with high-energy, make target sputter；The particle of sputtering is main It is atom and a small amount of ion.By technological parameters such as adjustment voltage of electric field, vacuums, sputtering particle is made to have higher leading, And with higher speed shooting SiGe layer, some particles can be injected in SiGe layer and be formed metastable SiGeSn alloy.
As example, during injecting containing the atom of Sn element, molecule, ion or plasma in described SiGe layer, The Implantation Energy of the degree of depth particle that described particle injects is determined, particle implantation dosage can adjust Sn element in SiGe layer Diffusion, therefore, controls suitable particle note during the atom containing Sn element, molecule, ion or plasma inject Enter energy and particle implantation dosage is extremely important.Preferably, in the present embodiment, the Implantation Energy of particle is 10KeV～100KeV, The implantation dosage of particle is 1E14～1E17.
Performing step S3, refer to the S3 step in Fig. 1, the described substrate after injecting makes annealing treatment.
As example, this annealing carrying out described substrate is designated as second time compared to above-mentioned first time annealing and moves back Fire processes.To described substrate after in described SiGe layer, injection contains the atom of Sn element, molecule, ion or plasma Make annealing treatment, i.e. can promote the generation of described SiGeSn material, be beneficial to again repair inject the damage that described substrate is brought.
As example, the process of described second time annealing is at vacuum, N2Or atmosphere of inert gases is carried out, annealing temperature is 500 DEG C～1000 DEG C, annealing time is 1 hour～3 hours.
The present invention also provides for a kind of SiGeSn material, and described SiGeSn material is prepared from by any one method disclosed above.
In sum, the present invention provides a kind of SiGeSn material and preparation method thereof, and the preparation method of described SiGeSn material is extremely Comprise the following steps less: providing substrate, described substrate comprises SiGe layer；Inject in described SiGe layer and contain the former of Sn element Son, molecule, ion or plasma；Described substrate after injecting makes annealing treatment.
Compared to prior art, SiGeSn material of the present invention and preparation method thereof has that with low cost, technique is simple, better quality, The advantage being more conducive to large-scale production.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, such as All that in art, tool usually intellectual is completed under without departing from disclosed spirit and technological thought etc. Effect is modified or changes, and must be contained by the claim of the present invention.

Claims (11)

1. the preparation method of a SiGeSn material, it is characterised in that at least comprise the following steps:
Thering is provided substrate, described substrate comprises SiGe layer；
Inject containing the atom of Sn element, molecule, ion or plasma in described SiGe layer；
Described substrate after injecting makes annealing treatment.
The preparation method of SiGeSn material the most according to claim 1, it is characterised in that: described substrate be SGOI substrate, Top layer is Si substrate or the Ge substrate of SiGe film.
The preparation method of SiGeSn material the most according to claim 1, it is characterised in that: in described SiGe layer Ge mole Percentage composition is 15%～60%.
The preparation method of SiGeSn material the most according to claim 1, it is characterised in that: contain injecting in described SiGe layer Before having the atom of Sn element, molecule, ion or plasma, also include injecting C ion in described SiGe layer Step.
The preparation method of SiGeSn material the most according to claim 4, it is characterised in that: in described SiGe layer, injecting C During ion, ion implantation energy is 10KeV～100KeV, and ion implantation dosage is 1E14～1E17.
6. the preparation method of SiGeSn material described in 4 is wanted according to right, it is characterised in that: in described SiGe layer, injecting C Before ion, also include the step that described substrate is carried out.
The preparation method of SiGeSn material the most according to claim 4, it is characterised in that: in described SiGe layer, injecting C After ion, before injecting containing the atom of Sn element, molecule, ion or plasma in described SiGe layer, also wrap Include the step that substrate described in a pair carries out making annealing treatment.
The preparation method of SiGeSn material the most according to claim 7, it is characterised in that: inject in described SiGe layer and contain The process before the atom of Sn element, molecule, ion or plasma made annealing treatment described substrate is at vacuum, N2 Or atmosphere of inert gases is carried out, annealing temperature is 500 DEG C～1000 DEG C, and annealing time is 1 hour～3 hours.
The preparation method of SiGeSn material the most according to claim 1, it is characterised in that: inject in described SiGe layer and contain During the atom of Sn element, molecule, ion or plasma, Implantation Energy is 10KeV～100KeV, injectant Amount is 1E14～1E17.
The preparation method of SiGeSn material the most according to claim 1, it is characterised in that: inject in described SiGe layer The process after atom, molecule, ion or plasma containing Sn element, described substrate made annealing treatment vacuum, N2Or atmosphere of inert gases is carried out, annealing temperature is 500 DEG C～1000 DEG C, and annealing time is 1 hour～3 hours.
11. 1 kinds of SiGeSn materials, it is characterised in that described SiGeSn material is by as any one of claim 1 to 10 Described preparation method is prepared from.
CN201510355810.3A 2015-06-24 2015-06-24 SiGeSn material and preparation method thereof Active CN106328502B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367154A (en) * 2012-03-31 2013-10-23 中芯国际集成电路制造(上海)有限公司 Transistor and method for forming same
CN103377945A (en) * 2012-04-28 2013-10-30 中芯国际集成电路制造(上海)有限公司 Forming method of MOS transistor
CN103839788A (en) * 2014-02-25 2014-06-04 清华大学 SiGeSn layer and forming method thereof
US20150041966A1 (en) * 2013-08-09 2015-02-12 Taiwan Semiconductor Manufacturing Company Limited Methods and Systems for Dopant Activation Using Microwave Radiation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367154A (en) * 2012-03-31 2013-10-23 中芯国际集成电路制造(上海)有限公司 Transistor and method for forming same
CN103377945A (en) * 2012-04-28 2013-10-30 中芯国际集成电路制造(上海)有限公司 Forming method of MOS transistor
US20150041966A1 (en) * 2013-08-09 2015-02-12 Taiwan Semiconductor Manufacturing Company Limited Methods and Systems for Dopant Activation Using Microwave Radiation
CN103839788A (en) * 2014-02-25 2014-06-04 清华大学 SiGeSn layer and forming method thereof

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