CN106301318A - The isolated drive circuit of MOSFET element - Google Patents
The isolated drive circuit of MOSFET element Download PDFInfo
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- CN106301318A CN106301318A CN201510240410.8A CN201510240410A CN106301318A CN 106301318 A CN106301318 A CN 106301318A CN 201510240410 A CN201510240410 A CN 201510240410A CN 106301318 A CN106301318 A CN 106301318A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The embodiment of the present invention provides the isolated drive circuit of a kind of MOSFET element.This circuit includes: low-voltage controls part, isolated part and the drive part of a MOSFET, low-voltage control part includes the first current-limiting resistance, the 2nd MOSFET and the drive circuit of the 2nd MOSFET, and the drive circuit of the 2nd MOSFET includes the first filter capacitor, the second filter capacitor and the second current-limiting resistance.The embodiment of the present invention connects low-voltage by the input of the isolated part of the isolated drive circuit in MOSFET element and controls part, make single-chip microcomputer when the input input low-voltage of isolated part causes conducting generation electric current between isolated part input pin, electric current flows into low-voltage and controls part, prevents electric current from flowing into single-chip microcomputer and causes the current drain of single-chip microcomputer bigger.
Description
Technical field
The present embodiments relate to power electronics and drive applied technical field, particularly relate to a kind of MOSFET device
The isolated drive circuit of part.
Background technology
Metal oxide layer semiconductor field-effect transistor (Metal Oxide Semiconductor Field
Effect Transistor, is called for short MOSFET) it is the device of Control of Voltage type, according to work current-carrying
The polarity of electronics is different, has dividing of N-channel MOS FET and P-channel MOSFET.MOSFET is driven
Galvanic electricity road, owing to application scenario demand is different, the driving circuit structure causing MOSFET is different.
Being that to be applied to switching speed the highest as shown in Figure 1, P-channel MOSFET end output voltage is higher, needs
Want the structure chart of the isolated drive circuit of the P-channel MOSFET element of electrical isolation, this P-channel MOSFET
The isolated drive circuit of device includes low-voltage control part, isolated part and P-channel MOSFET drive division
Point, wherein, low-voltage control part includes current-limiting resistance R3, and isolated part uses optocoupler G1 to carry out electricity
Air bound from, P-channel MOSFET drive part includes two current-limiting resistance R1 and R2.
Being that to be applied to switching speed the highest as shown in Figure 2, N-channel MOS FET end output voltage is higher, needs
Want the structure chart of the isolated drive circuit of the N-channel MOS FET device of electrical isolation, this N-channel MOS FET
The isolated drive circuit of device includes low-voltage control part, isolated part and N-channel MOS FET drive division
Point, wherein, low-voltage control part includes current-limiting resistance R3, and isolated part uses optocoupler G1 to carry out electricity
Air bound from, N-channel MOS FET drive part includes two current-limiting resistance R1 and R2.
Owing to the pin 2 of the optocoupler G1 of N-channel MOS FET or the drive circuit of P-channel MOSFET i.e. draws
Foot PPSA-CTR is directly connected with single-chip microcomputer, when single-chip microcomputer by pin PPSA-CTR to optocoupler G1's
When pin 2 inputs low-voltage, turn between pin 1 and the pin 2 of optocoupler G1 and produce electric current, this electricity
Flowing and flow into single-chip microcomputer by pin PPSA-CTR, the current drain causing single-chip microcomputer is bigger.
Summary of the invention
The embodiment of the present invention provides the isolated drive circuit of a kind of MOSFET element, to prevent the electricity of single-chip microcomputer
Stream consumes bigger.
One aspect of the embodiment of the present invention is to provide the isolated drive circuit of a kind of MOSFET element, bag
Include: low-voltage control part, isolated part and the drive part of a MOSFET, wherein,
Described low-voltage control part includes the first current-limiting resistance, the 2nd MOSFET and described 2nd MOSFET
Drive circuit, the first input of one end of described first current-limiting resistance and the input of described isolated part
Line connects, and the other end of described first current-limiting resistance is connected with high voltage, the drain electrode of described 2nd MOSFET
It is connected with the second input line of the input of described isolated part, the source ground of described 2nd MOSFET,
The drive circuit of described 2nd MOSFET includes the first filter capacitor, the second filter capacitor and the second current limliting electricity
Resistance, one end of described second current-limiting resistance electrically connects with the grid of described 2nd MOSFET, described first filter
Ripple electric capacity is connected between the drain and gate of described 2nd MOSFET, and described second filter capacitor is connected to
Between source electrode and the grid of described 2nd MOSFET；
The grid of a described MOSFET is connected with the first output lead of the outfan of described isolated part；
The drive part of a described MOSFET includes the first resistance and the second resistance, and described first resistance is even
It is connected between source electrode and the grid of a described MOSFET, one end of described second resistance and described isolation part
Second output lead of the outfan divided connects.
The isolated drive circuit of the MOSFET element that the embodiment of the present invention provides, by MOSFET element
Isolated drive circuit isolated part input connect low-voltage control part, make single-chip microcomputer to isolation
When the input input low-voltage of part causes conducting generation electric current between isolated part input pin, electricity
Stream flows into low-voltage and controls part, prevents electric current from flowing into single-chip microcomputer and causes the current drain of single-chip microcomputer bigger.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the isolated drive circuit of P-channel MOSFET element of the prior art；
Fig. 2 is the circuit diagram of the isolated drive circuit of N-channel MOS FET device of the prior art；
The circuit of the isolated drive circuit of the P-channel MOSFET element that Fig. 3 provides for the embodiment of the present invention
Figure；
The circuit of the isolated drive circuit of the N-channel MOS FET device that Fig. 4 provides for the embodiment of the present invention
Figure；
The electricity of the isolated drive circuit of the P-channel MOSFET element that Fig. 5 provides for another embodiment of the present invention
Lu Tu；
The electricity of the isolated drive circuit of the N-channel MOS FET device that Fig. 6 provides for another embodiment of the present invention
Lu Tu；
The electricity of the isolated drive circuit of the P-channel MOSFET element that Fig. 7 provides for another embodiment of the present invention
Lu Tu；
The electricity of the isolated drive circuit of the N-channel MOS FET device that Fig. 8 provides for another embodiment of the present invention
Lu Tu；
The electricity of the isolated drive circuit of the P-channel MOSFET element that Fig. 9 provides for another embodiment of the present invention
Lu Tu；
The isolated drive circuit of the N-channel MOS FET device that Figure 10 provides for another embodiment of the present invention
Circuit diagram.
Detailed description of the invention
The circuit of the isolated drive circuit of the P-channel MOSFET element that Fig. 3 provides for the embodiment of the present invention
Figure.As it is shown on figure 3, the isolated drive circuit of P-channel MOSFET element include low-voltage control part,
Isolated part and the drive part of a MOSFET, described low-voltage control part includes the first current-limiting resistance
R3, the 2nd MOSFET NMOS1 and the drive circuit of described 2nd MOSFET, the first current-limiting resistance R3's
One end is connected with the first input line 1 of the input of isolated part G1, another of the first current-limiting resistance R3
End is connected with high voltage, the drain electrode of the 2nd MOSFET NMOS1 and the second of the input of isolated part G1
Input line 2 connects, the source ground of the 2nd MOSFET NMOS1, the driving of the 2nd MOSFET NMOS1
Circuit includes the first filter capacitor C1, the second filter capacitor C2 and the second current-limiting resistance R4, the second current limliting
One end of resistance R4 electrically connects with the grid of the 2nd MOSFET NMOS1, and the first filter capacitor C1 is connected to
Between the drain and gate of the 2nd MOSFET NMOS1, the second filter capacitor C2 is connected to the 2nd MOSFET
Between source electrode and the grid of NMOS1；The grid of the oneth MOSFET PMOS1 and the output of isolated part G1
First output lead 4 of end connects；The drive part of the oneth MOSFET PMOS1 include the first resistance R1 and
Second resistance R2, the first resistance R1 are connected between source electrode and the grid of a MOSFET PMOS1, the
One end of two resistance R2 is connected with the second output lead 3 of the outfan of isolated part G1.
In embodiments of the present invention, a described MOSFET is P-channel MOSFET, described 2nd MOSFET
For N-channel MOS FET；The other end ground connection of the second resistance R2；The pin of P-channel MOSFET PMOS1
1 be grid, pin 2 be drain electrode, pin 3 be source electrode, the pin 1 of N-channel MOS FET NMOS1 is
Grid, pin 2 are source electrode for drain electrode, pin 3.
First current-limiting resistance R3 is used for limiting isolated part G1 input electric current, prevents isolated part G1 defeated
Entering to hold the electric current excessive minimizing isolated part G1 life-span, NMOS1 is used for controlling the switch of isolated part G1, and
And there is the effect reducing control end PPSA-CTR electric current output.First filter capacitor C1 and second filtering
Electric capacity C2 is used for being filtered the input of NMOS1.Second resistance R2 plays the effect of current limliting, the
One resistance R1 also has to the gate charges effect of PMOS1 in addition to metering function.
The circuit of the isolated drive circuit of the N-channel MOS FET device that Fig. 4 provides for the embodiment of the present invention
Figure.As shown in Figure 4, the isolated drive circuit of N-channel MOS FET device include low-voltage control part,
Isolated part and the drive part of a MOSFET, described low-voltage control part includes the first current-limiting resistance
R3, the 2nd MOSFET NMOS1 and the drive circuit of described 2nd MOSFET, the first current-limiting resistance R3's
One end is connected with the first input line 1 of the input of isolated part G1, another of the first current-limiting resistance R3
End is connected with high voltage, the drain electrode of the 2nd MOSFET NMOS1 and the second of the input of isolated part G1
Input line 2 connects, the source ground of the 2nd MOSFET NMOS1, the driving of the 2nd MOSFET NMOS1
Circuit includes the first filter capacitor C1, the second filter capacitor C2 and the second current-limiting resistance R4, the second current limliting
One end of resistance R4 electrically connects with the grid of the 2nd MOSFET NMOS1, and the first filter capacitor C1 is connected to
Between the drain and gate of the 2nd MOSFET NMOS1, the second filter capacitor C2 is connected to the 2nd MOSFET
Between source electrode and the grid of NMOS1；The grid of the oneth MOSFET NMOS2 and the output of isolated part G1
First output lead 3 of end connects；The drive part of the oneth MOSFET NMOS2 include the first resistance R1 and
Second resistance R2, the first resistance R1 are connected between source electrode and the grid of a MOSFET NMOS2, the
One end of two resistance R2 is connected with the second output lead 4 of the outfan of isolated part G1.
In embodiments of the present invention, a described MOSFET is the first N-channel MOS FET, described second
MOSFET is the second N-channel MOS FET；Another termination high voltage of second resistance R2；Oneth MOSFET
The pin 1 of NMOS2 be grid, pin 2 be drain electrode, pin 3 be source electrode, the 2nd MOSFET NMOS1
Pin 1 be grid, pin 2 be drain electrode, pin 3 be source electrode.
First current-limiting resistance R3 is used for limiting isolated part G1 input electric current, prevents isolated part G1 defeated
Entering to hold the electric current excessive minimizing isolated part G1 life-span, NMOS1 is used for controlling the switch of isolated part G1, and
And there is the effect reducing control end PPSA-CTR electric current output.First filter capacitor C1 and second filtering
Electric capacity C2 is used for being filtered the input of NMOS1.Second resistance R2 plays the effect of current limliting, the
One resistance R1 also has to the gate charges effect of NMOS2 in addition to metering function.
The embodiment of the present invention is by the input of the isolated part of the isolated drive circuit in MOSFET element
Connect low-voltage and control part, make single-chip microcomputer input low-voltage to the input of isolated part and cause isolation part
When dividing conducting generation electric current between input pin, electric current flows into low-voltage and controls part, prevents electric current stream
Entering single-chip microcomputer causes the current drain of single-chip microcomputer bigger.
The electricity of the isolated drive circuit of the P-channel MOSFET element that Fig. 5 provides for another embodiment of the present invention
Lu Tu；The isolated drive circuit of the N-channel MOS FET device that Fig. 6 provides for another embodiment of the present invention
Circuit diagram.On the basis of above-described embodiment, the drive circuit of described 2nd MOSFET also includes discharging back
Road, described discharge loop is in parallel with described second current-limiting resistance, and described discharge loop is by the 3rd resistance and two
Pole pipe is composed in series.
As shown in Figure 5 and Figure 6, the drive circuit of the 2nd MOSFET NMOS1 also includes discharge loop, should
Discharge loop includes that the 3rd resistance R5 and diode D1, the 3rd resistance R5 and diode D1 connect, and puts
Electricity loop is in parallel with the second current-limiting resistance R4.When single-chip microcomputer is by pin PPSA-CTR high input voltage,
Diode D1 is not turned on i.e. discharge loop and is not turned on, and the second current-limiting resistance R4 conducting, electric current flows into second
The grid of MOSFET NMOS1, when single-chip microcomputer inputs low-voltage by pin PPSA-CTR, diode
The i.e. discharge loop of D1 conducting turns on, and the second current-limiting resistance R4 conducting, electric current is from the 2nd MOSFET NMOS1
Grid separately flow into the second current-limiting resistance R4 and discharge loop, i.e. by the 3rd resistance R5 and diode D1
The discharge loop that series connection is formed plays the effect of repid discharge.
The embodiment of the present invention increases discharge loop by the drive circuit at the 2nd MOSFET, makes inflow second
The electric current of MOSFET can repid discharge.
The electricity of the isolated drive circuit of the P-channel MOSFET element that Fig. 7 provides for another embodiment of the present invention
Lu Tu；The isolated drive circuit of the N-channel MOS FET device that Fig. 8 provides for another embodiment of the present invention
Circuit diagram；The isolated drive circuit of the P-channel MOSFET element that Fig. 9 provides for another embodiment of the present invention
Circuit diagram；The isolation drive of the N-channel MOS FET device that Figure 10 provides for another embodiment of the present invention
The circuit diagram of circuit.On the basis of above-described embodiment, the drive part of a described MOSFET also includes
Zener diode, one end of described Zener diode connects the source electrode of a described MOSFET, described voltage stabilizing
The other end of diode connects described second output lead.
As it is shown in fig. 7, on the basis of Fig. 5, the drive part of a MOSFET PMOS1 also includes surely
One end of pressure diode T1, Zener diode T1 connects the source electrode of a MOSFET PMOS1, voltage stabilizing two
The other end of pole pipe T1 connects the second output lead 3, and Zener diode T1 is carried in PMOS1 for restriction
The voltage swing of grid, prevents PMOS1 grid voltage too high damage the oneth MOSFET PMOS1.
As it is shown in figure 9, on the basis of Fig. 3, the drive part of a MOSFET PMOS1 also includes surely
One end of pressure diode T1, Zener diode T1 connects the source electrode of a MOSFET PMOS1, voltage stabilizing two
The other end of pole pipe T1 connects the second output lead 3, and Zener diode T1 is carried in PMOS1 for restriction
The voltage swing of grid, prevents PMOS1 grid voltage too high damage the oneth MOSFET PMOS1.
As shown in Figure 8, on the basis of Fig. 6, the drive part of a MOSFET NMOS2 also includes surely
One end of pressure diode T1, Zener diode T1 connects the source electrode of a MOSFET NMOS2, voltage stabilizing two
The other end of pole pipe T1 connects the second output lead 4, and Zener diode T1 is carried in NMOS2 for restriction
The voltage swing of grid, prevents NMOS2 grid voltage too high damage the oneth MOSFET NMOS2.
As shown in Figure 10, on the basis of Fig. 4, the drive part of a MOSFET NMOS2 also includes
One end of Zener diode T1, Zener diode T1 connects the source electrode of a MOSFET NMOS2, voltage stabilizing
The other end of diode T1 connects the second output lead 4, and Zener diode T1 is carried in NMOS2 for restriction
The voltage swing of grid, prevents NMOS2 grid voltage too high damage the oneth MOSFET NMOS2.
The embodiment of the present invention increases Zener diode by the drive part at a MOSFET, limits and loads
At the voltage swing of a MOSFET grid, prevent a too high damage of MOSFET grid voltage first
MOSFET。
On the basis of above-described embodiment, described isolated part is optocoupler.
The power of the described MOSFET power more than described 2nd MOSFET.
Isolated part G1 in Fig. 3-Figure 10 all uses optocoupler to carry out electrical isolation, the pressure voltage of optocoupler and
Switching speed carries out type selecting according to actual needs.The power of the PMOS1 power more than NMOS1；NMOS2's
The power power more than NMOS1.
In sum, the embodiment of the present invention is by the isolated part of the isolated drive circuit in MOSFET element
Input connect low-voltage control part, make input from single-chip microcomputer to isolated part input low-voltage lead
When causing conducting generation electric current between isolated part input pin, electric current flows into low-voltage and controls part, anti-
Only electric current flows into single-chip microcomputer and causes the current drain of single-chip microcomputer bigger；By the driving electricity at the 2nd MOSFET
Road increases discharge loop, enables the electric current repid discharge of inflow the 2nd MOSFET；By first
The drive part of MOSFET increases Zener diode, and the voltage that restriction is carried in a MOSFET grid is big
Little, prevent MOSFET grid voltage too high damage the oneth MOSFET.
In several embodiments provided by the present invention, it should be understood that disclosed apparatus and method,
Can realize by another way.Such as, device embodiment described above is only schematically,
Such as, the division of described unit, it is only a kind of logic function and divides, actual can have additionally when realizing
Dividing mode, the most multiple unit or assembly can in conjunction with or be desirably integrated into another system, or
Some features can be ignored, or does not performs.Another point, shown or discussed coupling each other or
Direct-coupling or communication connection can be the INDIRECT COUPLING by some interfaces, device or unit or communication link
Connect, can be electrical, machinery or other form.
The described unit illustrated as separating component can be or may not be physically separate, makees
The parts shown for unit can be or may not be physical location, i.e. may be located at a place,
Or can also be distributed on multiple NE.Can select according to the actual needs part therein or
The whole unit of person realizes the purpose of the present embodiment scheme.
It addition, each functional unit in each embodiment of the present invention can be integrated in a processing unit,
Can also be that unit is individually physically present, it is also possible to two or more unit are integrated in a list
In unit.Above-mentioned integrated unit both can realize to use the form of hardware, it would however also be possible to employ hardware adds software
The form of functional unit realizes.
The above-mentioned integrated unit realized with the form of SFU software functional unit, can be stored in a computer
In read/write memory medium.Above-mentioned SFU software functional unit is stored in a storage medium, including some fingers
Make with so that a computer equipment (can be personal computer, server, or the network equipment etc.)
Or processor (processor) performs the part steps of method described in each embodiment of the present invention.And it is aforementioned
Storage medium include: USB flash disk, portable hard drive, read only memory (Read-Only Memory, ROM),
Random access memory (Random Access Memory, RAM), magnetic disc or CD etc. are various permissible
The medium of storage program code.
Those skilled in the art are it can be understood that arrive, for convenience and simplicity of description, only with above-mentioned respectively
The division of functional module is illustrated, and in actual application, can above-mentioned functions be divided as desired
Join and completed by different functional modules, the internal structure of device will be divided into different functional modules, with
Complete all or part of function described above.The specific works process of the device of foregoing description is permissible
With reference to the corresponding process in preceding method embodiment, do not repeat them here.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, rather than right
It limits；Although the present invention being described in detail with reference to foregoing embodiments, this area common
Skilled artisans appreciate that the technical scheme described in foregoing embodiments still can be modified by it,
Or the most some or all of technical characteristic is carried out equivalent；And these amendments or replacement, and
The essence not making appropriate technical solution departs from the scope of various embodiments of the present invention technical scheme.
Claims (9)
1. the isolated drive circuit of a MOSFET element, it is characterised in that including: low-voltage controls
Partly, isolated part and the drive part of a MOSFET, wherein,
Described low-voltage control part includes the first current-limiting resistance, the 2nd MOSFET and described 2nd MOSFET
Drive circuit, the first input of one end of described first current-limiting resistance and the input of described isolated part
Line connects, and the other end of described first current-limiting resistance is connected with high voltage, the drain electrode of described 2nd MOSFET
It is connected with the second input line of the input of described isolated part, the source ground of described 2nd MOSFET,
The drive circuit of described 2nd MOSFET includes the first filter capacitor, the second filter capacitor and the second current limliting electricity
Resistance, one end of described second current-limiting resistance electrically connects with the grid of described 2nd MOSFET, described first filter
Ripple electric capacity is connected between the drain and gate of described 2nd MOSFET, and described second filter capacitor is connected to
Between source electrode and the grid of described 2nd MOSFET；
The grid of a described MOSFET is connected with the first output lead of the outfan of described isolated part；
The drive part of a described MOSFET includes the first resistance and the second resistance, and described first resistance is even
It is connected between source electrode and the grid of a described MOSFET, one end of described second resistance and described isolation part
Second output lead of the outfan divided connects.
The isolated drive circuit of MOSFET element the most according to claim 1, it is characterised in that
A described MOSFET is P-channel MOSFET, and described 2nd MOSFET is N-channel MOS FET.
The isolated drive circuit of MOSFET element the most according to claim 2, it is characterised in that
The other end ground connection of described second resistance.
The isolated drive circuit of MOSFET element the most according to claim 1, it is characterised in that
A described MOSFET is the first N-channel MOS FET, and described 2nd MOSFET is the second N-channel
MOSFET。
The isolated drive circuit of MOSFET element the most according to claim 4, it is characterised in that
Another termination high voltage of described second resistance.
6., according to the isolated drive circuit of the MOSFET element described in any one of claim 1-5, it is special
Levying and be, the drive circuit of described 2nd MOSFET also includes discharge loop, and described discharge loop is with described
Second current-limiting resistance is in parallel, and described discharge loop is made up of the 3rd resistance and Diode series.
The isolated drive circuit of MOSFET element the most according to claim 6, it is characterised in that
The drive part of a described MOSFET also includes Zener diode, and one end of described Zener diode connects
The source electrode of a described MOSFET, the other end of described Zener diode connects described second output lead.
The isolated drive circuit of MOSFET element the most according to claim 7, it is characterised in that
Described isolated part is optocoupler.
The isolated drive circuit of MOSFET element the most according to claim 8, it is characterised in that
The power of the described MOSFET power more than described 2nd MOSFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510240410.8A CN106301318B (en) | 2015-05-12 | 2015-05-12 | Isolation driving circuit of MOSFET device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510240410.8A CN106301318B (en) | 2015-05-12 | 2015-05-12 | Isolation driving circuit of MOSFET device |
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| CN106301318B CN106301318B (en) | 2023-07-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107124169A (en) * | 2017-04-19 | 2017-09-01 | 广州视源电子科技股份有限公司 | A kind of electronic switching circuit |
| CN107124168A (en) * | 2017-04-19 | 2017-09-01 | 广州视源电子科技股份有限公司 | A kind of isolated form electronic switching circuit |
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| US4347447A (en) * | 1981-04-16 | 1982-08-31 | Mostek Corporation | Current limiting MOS transistor driver circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107124169A (en) * | 2017-04-19 | 2017-09-01 | 广州视源电子科技股份有限公司 | A kind of electronic switching circuit |
| CN107124168A (en) * | 2017-04-19 | 2017-09-01 | 广州视源电子科技股份有限公司 | A kind of isolated form electronic switching circuit |
| CN107124168B (en) * | 2017-04-19 | 2020-07-31 | 广州视源电子科技股份有限公司 | Isolated electronic switch circuit |
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| Publication number | Publication date |
|---|---|
| CN106301318B (en) | 2023-07-18 |
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